Processed body with circuit substrate and processing method of circuit substrate

Abstract

The present invention is a circuit substrate processing body in which a temporary adhesive material layer is laminated on a support in a removable manner and the temporary adhesive material layer is laminated on the surface of a circuit substrate having a circuit surface on the surface and requiring processing on the back side in a removable manner, characterized in that the temporary adhesive material layer is formed by a thermosetting silicone polymer layer (A), and the polymer layer (A) has a peeling force of 10 to 500 mN / 25 mm in a 180° peeling test when it is peeled off from the upper surface of the support after curing, and a peeling force of 50 to 1000 mN / 25 mm in a 180° peeling test when it is peeled off from the upper surface of the circuit substrate after curing. Thus, a circuit substrate processing body and a circuit substrate processing method are provided, which can be constructed with simple and low-cost processing, have high adaptability to the process of forming TSV and the process of wiring on the back side of the substrate, have excellent thermal processing resistance, and can improve the productivity of thin substrates.

Description

Technical Field

[0001] The present invention relates to a processed body with a circuit board and a processing method for a circuit board, and in particular to a processed body with a circuit board and a processing method for a circuit board capable of effectively obtaining a thin circuit board. Background Art

[0002] In order to further achieve high density and large capacity, three-dimensional semiconductor implementation is required. Three-dimensional implementation technology refers to a semiconductor manufacturing technology that thins a semiconductor chip, further connects it through silicon via electrodes (TSV: through silicon via) and stacks multiple layers at the same time. In order to realize this technology, it is necessary to thin the substrate on which the semiconductor circuit is formed by grinding the non-circuit forming surface (also called the "back side"), and perform a process of forming an electrode including TSV on the back side. In the past, in the back grinding process of the silicon substrate, a back protective tape was affixed to the opposite side of the grinding surface to prevent the wafer from being damaged during grinding. However, the tape uses an organic resin film in the base material, which has flexibility, but on the contrary, the strength and heat resistance are insufficient, and it is not suitable for the TSV formation process and the wiring layer formation process on the back side.

[0003] In this regard, the following system has been proposed: it joins the semiconductor substrate to a support such as silicon or glass via an adhesive layer, so that it can fully withstand the back grinding, TSV and back electrode formation processes. At this time, the adhesive layer when joining the substrate to the support is important. It needs to be able to join the substrate to the support without gaps, and have sufficient durability to withstand subsequent processes, and further needs to be able to easily peel off the thin wafer from the support at the end. In this way, since the peeling is performed at the end, in this specification, the adhesive layer is referred to as a temporary adhesive layer (or temporary adhesive material layer).

[0004] As the existing known temporary adhesive layer and its peeling method, a technology of irradiating high-intensity light to an adhesive material containing a light-absorbing substance to decompose the adhesive material layer and thereby peel the adhesive material layer from the support body is proposed (Patent Document 1), and a technology of using a hot-melting hydrocarbon compound in the adhesive material to join and peel it in a heated molten state (Patent Document 2). The former technology requires expensive equipment such as lasers, and there are problems such as the processing time for each substrate being prolonged. In addition, the latter technology is simple because it is controlled only by heating, but on the contrary, it has a narrow range of application due to insufficient thermal stability at high temperatures exceeding 200°C. Furthermore, these temporary adhesive layers are not suitable for forming a uniform film thickness on a high-step difference substrate and for complete adhesion to the support body.

[0005] In addition, a technology involving a wafer processing method using a silicone adhesive in a temporary adhesive material layer has been proposed (Patent Document 3). This method uses an addition-curing silicone adhesive to bond a substrate to a support, and during peeling, the silicone resin is immersed in a reagent that dissolves or decomposes it, thereby separating the substrate from the support. Therefore, peeling takes a very long time and is difficult to apply to actual manufacturing processing.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2004-64040

[0009] Patent Document 2: Japanese Patent Application Publication No. 2006-328104

[0010] Patent Document 3: U.S. Patent No. 7541264 Summary of the invention

[0011] Technical Problems to be Solved by the Invention

[0012] The present invention is made in view of the above situation, and its purpose is to provide a processing body with a circuit substrate and a processing method for a circuit substrate, wherein the processing body with a circuit substrate can be constructed with simple and low-cost processing, has high adaptability to the process of forming TSV and the wiring process on the back side of the substrate, and has excellent resistance to thermal processing such as CVD. There is no possibility of deviation of the circuit substrate when grinding the circuit substrate, etc., the support body and the circuit substrate are easy to peel off, and the thermosetting silicone polymer layer (A) can be peeled off from the circuit substrate without residue, which can improve the productivity of thin substrates.

[0013] Technical means to solve technical problems

[0014] In order to achieve the above-mentioned object, the present invention provides a processed body with a circuit substrate, wherein a temporary adhesive material layer is laminated on a support body in a releasable manner, and the temporary adhesive material layer is laminated on a surface of a circuit substrate with a circuit surface and the back side needs to be processed in a releasable manner, and the processed body with a circuit substrate is formed in the order of the support body, the temporary adhesive material layer, and the circuit substrate, and is characterized in that:

[0015] The temporary adhesive material layer is formed of a heat-curable silicone polymer layer (A),

[0016] The polymer layer (A) laminated on the support has a peeling force of 10 to 500 mN / 25 mm when peeled from the upper surface of the support after curing in a 180° peeling test at 5 mm / sec on a 25 mm wide test piece, and

[0017] The polymer layer (A) laminated on the circuit board has a peeling force of 50 to 1000 mN / 25 mm when peeled from the upper surface of the circuit board after curing in a 180° peeling test at 5 mm / sec on a 25 mm wide test piece.

[0018] Since such a processed body with a circuit board has a temporary adhesive material layer having a single-layer structure formed by a thermosetting silicone polymer layer (A), it is easy to achieve temporary bonding between the circuit board and the support body through the temporary adhesive material layer, and even when a high-step difference substrate is used, the temporary adhesive material layer can be formed with a uniform film thickness. In addition, such a processed body with a circuit board has high adaptability to the process of forming TSV and wafer back wiring process. By making the temporary adhesive layer monolayer, a simple and low-cost process can be constructed. Furthermore, it has good resistance to thermal processing such as CVD, and can be easily peeled even when the thin wafer is cut before peeling, which can improve the productivity of thin wafers. In addition, since the thermosetting silicone polymer layer (A) of the present invention has the above-mentioned peeling force after thermal curing, there is no possibility of deviation of the circuit board when grinding the back of the circuit board, and it will not peel even if exposed to high temperature. The support and the circuit board are easy to peel, and the thermosetting silicone polymer layer (A) can be peeled off from the circuit board without residue.

[0019] Furthermore, in this case, it is preferred that the heat-curable siloxane polymer layer (A) is a cured product of a composition comprising: (A-1) an organopolysiloxane having two or more alkenyl groups in one molecule, (A-2) an organohydrogenpolysiloxane having two or more hydrogen atoms (Si—H groups) bonded to silicon atoms in one molecule, and (A-3) a platinum catalyst, wherein the heat-curable siloxane polymer layer (A) contains the components (A-1) and (A-2) in such an amount that the molar ratio of the Si—H groups in the component (A-2) to the alkenyl groups in the component (A-1) is 0.3 to 10.

[0020] Examples of the pre-heat-cured composition for forming the heat-curable silicone polymer layer (A) having the above-mentioned peeling strength include compositions containing the above-mentioned (A-1) to (A-3).

[0021] In addition, the organopolysiloxane (A-1) having two or more alkenyl groups in one molecule preferably contains SiO 4 / 2 The siloxane unit (Q unit) represented by .

[0022] A cured product of a composition containing such (A-1) is preferred because it reliably has the above-mentioned peeling strength.

[0023] Furthermore, the thermosetting siloxane polymer layer (A) is preferably a cured product of a composition containing, in addition to the component (A-1), the component (A-2) and the component (A-3), any one or both of an organic solvent (A-4) and a reaction control agent (A-5).

[0024] By making the pre-curing composition for forming the heat-curable siloxane polymer layer (A) contain (A-4) an organic solvent, the viscosity of the composition can be adjusted, and a solution can be prepared in a manner to form a target film thickness. In addition, by adding (A-5) a reaction control agent, the stability during storage can be improved.

[0025] In addition, it is preferred that the cured product of the thermosetting siloxane polymer layer (A) contains 0.001 to 60.000 mol % of R 1 R 2 R 3 SiO 1 / 2 Siloxane units (M units) represented by 4 R 5 SiO 2 / 2 Siloxane units (D units) represented by 6 SiO 3 / 2 Siloxane units (T units) represented by 0.000 to 60.000 mol % of SiO 4 / 2 The siloxane unit (Q unit) represented by 1 ~R 6 Each represents an unsubstituted or substituted monovalent hydrocarbon group.

[0026] When the thermosetting siloxane polymer layer (A) becomes the above-mentioned film after curing, the required elastic modulus can be satisfied.

[0027] In this case, the storage modulus of the cured product of the thermosetting siloxane polymer layer (A) at 25° C. is preferably 1×10 6 ~1×10 9 Pa.

[0028] If the thermosetting siloxane polymer layer (A) forms a film having the above elastic modulus after curing, it can sufficiently withstand the grinding step of thinning the circuit board, and the warping of the board is reduced, so that problems such as failure to mount on a device are less likely to occur during the process, which is preferred.

[0029] In addition, the present invention provides a method for processing a circuit board, characterized in that it comprises the following steps:

[0030] (a) a step of preparing the above-mentioned processed body with circuit board,

[0031] (b) a step of thermally curing the thermosetting siloxane polymer layer (A);

[0032] (c) grinding or polishing the back surface of the circuit board;

[0033] (d) a step of processing the back surface of the circuit board;

[0034] (e) a step of separating the support from the circuit board-attached body,

[0035] (f) A step of separating the cured film of the polymer layer (A) from the substrate with circuit processed body from which the support is separated, to take out only the substrate with circuit.

[0036] In addition, the present invention provides a method for processing a circuit board, characterized in that it comprises the following steps:

[0037] (a) preparing the circuit board-attached body,

[0038] (b) a step of thermally curing the thermosetting siloxane polymer layer (A);

[0039] (c) grinding or polishing the back surface of the circuit board;

[0040] (d) a step of processing the back surface of the circuit board;

[0041] (g) A step of separating the support and the polymer layer (A) integrally from the substrate with circuit processed body to remove only the substrate with circuit.

[0042] In the case of such a processing method for a circuit board, the single-layer temporary adhesive material layer of the present invention is used for bonding the circuit board with a support body, so that the use of the temporary adhesive material layer can easily manufacture a thin wafer (thin circuit board) having a through-hole electrode structure or a bump connection structure. In addition, by such a peeling step, the support body can be easily peeled off from the processed circuit board.

[0043] In this case, the step of preparing the processed body with circuit board in the step (a) preferably includes the following steps:

[0044] (a-1) a step of laminating an uncured composition layer of the thermosetting siloxane polymer layer (A) on the support,

[0045] (a-2) A step of bonding the support and the board with circuit together via the uncured composition layer of the polymer layer (A).

[0046] In this case, the step of preparing the processed body with circuit board in the step (a) preferably includes the following steps:

[0047] (a-3) a step of laminating the uncured composition layer of the polymer layer (A) on the circuit board,

[0048] (a-4) A step of bonding the circuit board to the support through the uncured composition layer of the polymer layer (A).

[0049] As the step of preparing the processed body with circuit board in the step (a), the above-mentioned method can be mentioned.

[0050] Effects of the Invention

[0051] The temporary adhesive material layer of the circuit board processing body of the present invention has a single-layer structure. Since it is sufficient to process a single layer, a simple and low-cost process can be constructed. By using a thermosetting silicone polymer layer as a temporary adhesive layer, not only does thermal decomposition of the resin not occur, but also resin flow at high temperatures does not occur. It has high heat resistance and is therefore applicable to a wide range of semiconductor film forming processes. Even for wafers with step differences, an adhesive material layer with high film thickness uniformity can be formed. Due to the film thickness uniformity, a uniform thin circuit board of less than 50 μm can be easily obtained. Furthermore, after the thin circuit board is manufactured, it can be easily peeled off from the support at room temperature, so it is easy to manufacture a fragile thin circuit board. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 This is a cross-sectional view showing an example of a processed body with circuit board of the present invention.

[0053] Description of Reference Numerals

[0054] 1: support; 2: temporary adhesive material layer (thermosetting silicone polymer layer (A)); 3: circuit board; 10: circuit board processed body. DETAILED DESCRIPTION

[0055] Hereinafter, the present invention will be described in more detail.

[0056] In order to achieve the above-mentioned purpose, the inventors of the present application have conducted careful research and discovered a circuit substrate processing body and a circuit substrate processing method. By making the circuit substrate processing body using a single-layer thermosetting temporary adhesive layer, a thin circuit substrate with a through-hole electrode structure or a bump connection structure can be simply manufactured, and the single-layer thermosetting temporary adhesive layer is formed by a thermosetting silicone polymer layer (A) having a specific tear-off release force after curing.

[0057] like Figure 1 As shown, the circuit board processing body 10 of the present invention has a temporary adhesive material layer 2 laminated on a support body 1 in a releasable manner, and the temporary adhesive material layer 2 is laminated on the surface of the circuit board 3 having a circuit surface on the surface and requiring processing on the back side in a releasable manner, and the circuit board processing body 10 is formed in the order of the support body 1, the temporary adhesive material layer 2, and the circuit board 3. That is, the temporary adhesive material layer 2 exists between the circuit board 3 having a circuit surface on the surface and requiring processing on the back side and the support body 1 that supports the circuit board 3 when processing the circuit board 3. In the present invention, the temporary adhesive material layer 2 is formed by a thermosetting silicone polymer layer (A).

[0058] <Temporary adhesive layer>

[0059] -Thermosetting siloxane polymer layer (A)-

[0060] The thermosetting siloxane polymer layer (A) as a constituent element of the processed body with circuit board of the present invention has a peeling force as follows: the peeling force when peeled off from the upper surface of the support after curing (i.e., after curing the polymer layer (A) in a state of being laminated on the support) is 10 to 500 mN / 25 mm, preferably 30 to 500 mN / 25 mm, and more preferably 50 to 200 mN / 25 mm in a 180° peeling test in which a 25 mm wide test piece is pulled and peeled off at 5 mm / sec. Since the peeling force when peeling off from the upper surface of the support after thermal curing of the thermosetting siloxane polymer layer (A) of the present invention is 10 mN or more, it will not peel off in the back processing step of the circuit board, and since the peeling force is 500 mN or less, the cured film of the polymer layer (A) can be easily peeled off from the support.

[0061] Furthermore, in the present invention, the polymer layer (A) laminated on the circuit board has a peeling force as follows: the peeling force when peeled from the upper surface of the circuit board after curing (i.e., after the polymer layer (A) is cured in a state of being laminated on the circuit board) is 50 to 1000 mN / 25 mm, preferably 70 to 1000 mN / 25 mm, and more preferably 80 to 500 mN / 25 mm in a 180° peeling test in which a 25 mm wide test piece is pulled and peeled at 5 mm / sec. Since the peeling force of the thermosetting siloxane polymer layer (A) of the present invention when peeled from the upper surface of the circuit board after thermal curing is 50 mN or more, it will not peel off in the back processing step of the circuit board, especially even if it is processed at high temperature, and since the peeling force is 1000 mN or less, the cured film of the polymer layer (A) can be peeled off from the circuit board using an adhesive tape.

[0062] Examples of the pre-heat-curing composition for forming the heat-curable silicone polymer layer (A) having the above-mentioned peeling strength include a pre-heat-curing composition containing the following components:

[0063] (A-1) an organopolysiloxane having two or more alkenyl groups in one molecule;

[0064] (A-2) an organohydrogenpolysiloxane containing two or more hydrogen atoms (Si—H groups) bonded to silicon atoms in one molecule, wherein the molar ratio of the Si—H groups in the component (A-2) to the alkenyl groups in the component (A-1) is 0.3 to 10;

[0065] (A-3) Platinum catalyst.

[0066] In addition, as an optional component, any one or both of (A-4) an organic solvent and (A-5) a reaction control agent may be contained. In this case, the (A-5) reaction control agent may be set to 0 to 8.0 parts by mass relative to 100 parts by mass of the total of the (A-1) and (A-2) components.

[0067] The components (A-1) to (A-5) are described below.

[0068] (A-1)Ingredients

[0069] The component (A-1) is an organopolysiloxane having two or more alkenyl groups in one molecule, for example, a linear or branched diorganopolysiloxane having two or more alkenyl groups in one molecule, or an organopolysiloxane having SiO 4 / 2 The organopolysiloxane having a resin structure and containing siloxane units (Q units) represented by the units is particularly preferably a diorganopolysiloxane containing 0.6 mol% (molar number of alkenyl groups / molar number of Si) to 9 mol% of alkenyl groups in one molecule, or an organopolysiloxane having a resin structure.

[0070] Specific examples of such organopolysiloxanes include organopolysiloxanes represented by the following formulae (1), (2), and (3). These organopolysiloxanes may be used alone or in combination of two or more.

[0071] R 7 (3-a) X a SiO-(R 7 XSiO) m -(R 7 2SiO) n -SiR 7 (3-a) X a (1)

[0072] R 7 2(HO)SiO-(R7 XSiO) p+2 -(R 7 2SiO) q -SiR 7 2(OH) (2)

[0073] (SiO 4 / 2 ) b (R 7 3SiO 1 / 2 ) c (R 7 (3-e) X e SiO 1 / 2 ) d (3)

[0074] In the formula, R 7 Each independently represents a monovalent hydrocarbon group having no aliphatic unsaturated bond, each independently represents a monovalent organic group containing an alkenyl group, a represents an integer of 0 to 3, and m and n represent numbers such that 2a+m represents an alkenyl content of 0.6 mol% to 9 mol% in one molecule. p and q represent numbers such that p+2 represents an alkenyl content of 0.6 mol% to 9 mol% in one molecule. e represents an integer of 1 to 3, and b, c, and d represent numbers such that (c+d) / b represents 0.3 to 3.0 and d / (b+c+d) represents 0.01 to 0.6.

[0075] In the above formula, R 7 It is preferably a monovalent hydrocarbon group having 1 to 10 carbon atoms, and examples thereof include alkyl groups such as methyl, ethyl, propyl, and butyl; cycloalkyl groups such as cyclohexyl; and aryl groups such as phenyl and tolyl. An alkyl group such as methyl or a phenyl group is particularly preferred.

[0076] As the alkenyl-containing monovalent organic group of X, an organic group having 2 to 10 carbon atoms is preferred, and examples thereof include alkenyl groups such as vinyl, allyl, hexenyl, and octenyl; (meth)acryloylalkyl groups such as acryloylpropyl, acryloylmethyl, and methacryloylpropyl; (meth)acryloyloxyalkyl groups such as acryloyloxypropyl, acryloyloxymethyl, methacryloyloxypropyl, and methacryloyloxymethyl; and alkenyl-containing monovalent hydrocarbon groups such as cyclohexenylethyl and vinyloxypropyl. Vinyl is particularly preferred industrially.

[0077] In the above general formula (1), a is an integer of 0 to 3. When a is 1 to 3, the molecular chain terminal is capped with an alkenyl group, so the reaction can be completed in a short time by the alkenyl group at the molecular chain terminal having good reactivity, which is preferred. Furthermore, from the perspective of cost, a=1 is industrially preferred. The alkenyl-containing diorganopolysiloxane is preferably in an oily or rubbery state. The alkenyl-containing diorganopolysiloxane may be linear or branched.

[0078] The above general formula (3) is SiO 4 / 2 The organopolysiloxane of the resin structure is a unit, wherein each e is independently an integer of 1 to 3, but from the perspective of cost, it is industrially preferred that e = 1. In addition, the product of the average value of e and d / (b+c+d) is preferably 0.02 to 1.50, more preferably 0.03 to 1.0. The organopolysiloxane of the resin structure can also be used as a solution dissolved in an organic solvent.

[0079] (A-2)Ingredients

[0080] The component (A-2) is a crosslinking agent, which is an organohydrogenpolysiloxane having at least two hydrogen atoms (Si-H groups) bonded to silicon atoms in one molecule, preferably an organohydrogenpolysiloxane having three or more hydrogen atoms (Si-H groups) bonded to silicon atoms in one molecule. Straight-chain, branched, or cyclic organohydrogenpolysiloxanes can be used.

[0081] The viscosity of the organohydrogenpolysiloxane of the component (A-2) at 25°C is preferably 1 to 5,000 mPa"s, and more preferably 5 to 500 mPa"s. The organohydrogenpolysiloxane may be a mixture of two or more. Regarding the amount of the component (A-2) used, it is preferred to blend it in such a manner that the molar ratio of the SiH group in the component (A-2) to the amount of the alkenyl group in the component (A-1) (SiH group / alkenyl group) is in the range of 0.3 to 10, and it is particularly preferred to blend it in such a manner that the above molar ratio is in the range of 1.0 to 8.0. If the molar ratio of the SiH group to the alkenyl group is greater than 0.3, the crosslinking density will not decrease, and the problem of non-solidification of the adhesive layer will not occur. If it is less than 10, the crosslinking density will not become too high, and sufficient adhesion and viscosity can be obtained. In addition, if the molar ratio is less than 10, the usable time of the treatment liquid can be extended.

[0082] (A-3)Ingredients

[0083] Component (A-3) is a platinum catalyst (i.e., a platinum group metal catalyst), examples of which include chloroplatinic acid, an alcohol solution of chloroplatinic acid, a reaction product of chloroplatinic acid and an alcohol, a reaction product of chloroplatinic acid and an olefin compound, and a reaction product of chloroplatinic acid and a vinyl-containing siloxane.

[0084] The amount of the component (A-3) added is an effective amount, and the platinum group metal component (by mass) is usually 1 to 5,000 ppm, preferably 5 to 2,000 ppm, relative to the total of the components (A-1) and (A-2). If it is 1 ppm or more, the curability of the silicone temporary adhesive material composition will not decrease, the crosslinking density will not decrease, and the holding power will not decrease. If it is 5,000 ppm or less, the usable time of the treatment liquid can be extended.

[0085] (A-4)Ingredients

[0086] (A-4) component is an organic solvent. The polymer layer (A) is formed by applying the pre-thermosetting composition solution on a support by spin coating, roll coating or the like. When the polymer layer (A) is formed on a support by spin coating or the like, it is preferred to apply the resin as a solution. As the organic solvent used at this time, there is no particular restriction as long as it is a solvent that can dissolve components (A-1) to (A-3) and (A-5), and hydrocarbon solvents or silicone solvents such as pentane, hexane, cyclohexane, isooctane, nonane, decane, p-menthane, terpene, isododecane, and dipentene can be used. The content of the solvent is 10 to 900 parts by mass, preferably 25 to 400 parts by mass, and more preferably 40 to 300 parts by mass, relative to 100 parts by mass of the resin.

[0087] (A-5)Ingredients

[0088] The component (A-5) is a reaction control agent, which may be added as needed to prevent the treatment liquid from thickening or gelling before heat curing when preparing the silicone temporary adhesive composition or applying it to a substrate.

[0089] Specific examples include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, 3,5-dimethyl-1-hexyn-3-ol, 1-ethynylcyclohexanol, 3-methyl-3-trimethylsiloxy-1-butyn, 3-methyl-3-trimethylsiloxy-1-pentyn, 3,5-dimethyl-3-trimethylsiloxy-1-hexyn, 1-ethynyl-1-trimethylsiloxycyclohexane, bis(2,2-dimethyl-3-butynyloxy)dimethylsilane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, and 1,1,3,3-tetramethyl-1,3-divinyldisiloxane. 1-ethynylcyclohexanol and 3-methyl-1-butyn-3-ol are preferred.

[0090] Generally, the amount of the component (A-5) is in the range of 0 to 8.0 parts by mass, preferably 0.01 to 8.0 parts by mass, and particularly preferably 0.05 to 2.0 parts by mass, relative to a total of 100 parts by mass of the components (A-1) and (A-2). If the amount is 8.0 parts by mass or less, the curability of the silicone temporary adhesive material composition will not decrease, and if the amount is 0.01 parts by mass or more, the effect of reaction control can be fully exerted.

[0091] Furthermore, in order to improve heat resistance, a known antioxidant material may be added to the composition solution of the polymer layer (A) before heat curing.

[0092] In addition, the thermosetting siloxane polymer layer (A) is preferably formed into a film thickness between 10 and 150 μm for use. If the film thickness is 10 μm or more, the substrate and the support can be bonded without gaps, and the thinning grinding process of the circuit board can be fully tolerated. If the film thickness of the polymer layer (A) is 150 μm or less, there is no possibility of resin deformation in the heat treatment process such as the TSV formation process. It can be tolerated and practical, so it is preferred. In addition, in order to further improve the heat resistance, fillers such as silica of less than 50 parts by mass can be added to the thermosetting siloxane.

[0093] The cured product of the thermosetting siloxane polymer layer (A) preferably contains 0.001 to 60.000 mol % of R 1 R 2 R 3 SiO 1 / 2 Siloxane units (M units) represented by 4 R 5 SiO 2 / 2 Siloxane units (D units) represented by 6 SiO 3 / 2 Siloxane units (T units) represented by 0.000 to 60.000 mol % of SiO 4 / 2 The siloxane unit (Q unit) represented by the formula (I) preferably contains 0.001 to 35.000 mol % of the M unit, 30.000 to 99.999 mol % of the D unit, 0.000 to 0.001 mol % of the T unit, and 0.000 to 50.000 mol % of the Q unit.

[0094] The above organic substituent R 1 , R 2 , R 3 , R 4 , R 5 and R 6 It is an unsubstituted or substituted monovalent hydrocarbon group, preferably having 1 to 10 carbon atoms, and specifically, preferably alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, n-pentyl, cyclopentyl, and n-hexyl, cycloalkyl groups such as cyclohexyl, aryl groups such as phenyl and tolyl, and groups in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms, and methyl and phenyl are particularly preferred.

[0095] Furthermore, it is preferred that the storage modulus of the cured film of the heat-curable siloxane polymer layer (A) at 25°C is 1×10 6 ~1×10 9 Pa.

[0096] If the thermosetting siloxane polymer layer (A) is a film having the above elastic modulus after curing, it can fully withstand the grinding process of thinning the circuit board, and the warping of the board becomes small, so that problems such as failure to mount on the device are less likely to occur during the process, which is preferred.

[0097] -Optional Ingredients-

[0098] Any components other than the above components may be added to the temporary adhesive used in the present invention. For example, non-reactive polyorganosiloxanes such as polydimethylsiloxane and polydimethyldiphenylsiloxane; antioxidants such as phenols, quinones, amines, phosphorus, phosphites, sulfurs, and thioethers; light stabilizers such as triazoles and benzophenones; flame retardants such as phosphates, halogens, phosphorus, and antimony; antistatic agents such as cationic active agents, anionic active agents, and nonionic active agents; and solvents for reducing the viscosity during coating, such as aromatic solvents such as toluene and xylene, aliphatic solvents such as hexane, octane, and isoparaffin, ketone solvents such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate and isobutyl acetate, ether solvents such as diisopropyl ether and 1,4-dioxane, or mixed solvents of these solvents.

[0099] The temporary adhesive material layer of the present invention contains the above-mentioned (A-1) to (A-3) and optionally mixes (A-4) and (A-5) to prepare an adhesive solution or to form a film.

[0100] <Processing method of circuit board>

[0101] The processing method of the circuit board of the present invention uses the circuit board processing body of the present invention to process the circuit board with a semiconductor circuit or the like, that is, it is characterized in that a temporary adhesive material layer formed by a single layer of the above-mentioned thermosetting siloxane polymer layer (A) is used as an adhesive layer between the circuit board and the support. The thickness of the thinned circuit board obtained by the processing method of the circuit board of the present invention is typically 5 to 300 μm, more typically 10 to 100 μm.

[0102] The processing method of the circuit board of the present invention is a method comprising the following steps:

[0103] (a) a step of preparing a processed body with a circuit board according to the present invention,

[0104] (b) a step of thermally curing the thermosetting siloxane polymer layer (A);

[0105] (c) grinding or polishing the back surface of the circuit board;

[0106] (d) a step of processing the back surface of the circuit board;

[0107] (e) a step of separating the support from the circuit board-attached body,

[0108] (f) a step of separating the cured film of the polymer layer (A) from the substrate with circuit processed body from which the support body is separated, to take out only the substrate with circuit,

[0109] or a method comprising the following steps:

[0110] (a) a step of preparing a processed body with a circuit board according to the present invention,

[0111] (b) a step of thermally curing the thermosetting siloxane polymer layer (A);

[0112] (c) grinding or polishing the back surface of the circuit board;

[0113] (d) a step of processing the back surface of the circuit board;

[0114] (g) A step of separating the support and the polymer layer (A) integrally from the substrate with circuit processed body to remove only the substrate with circuit.

[0115] [Step (a)]

[0116] Step (a) is a step of preparing the processed body with circuit board of the present invention. This step is to bond the circuit-forming surface of a circuit board with circuit board having a circuit-forming surface on the front and a non-circuit-forming surface on the back to a support body via a temporary adhesive material layer formed of a thermosetting silicone polymer layer (A), thereby manufacturing and preparing the processed body with circuit board of the present invention, and the step includes the following steps:

[0117] (a-1) a step of laminating the uncured composition layer of the polymer layer (A) on the support,

[0118] (a-2) a step of laminating the support and the circuit board via the uncured composition layer of the polymer layer (A),

[0119] Or including the following processes:

[0120] (a-3) a step of laminating the uncured composition layer of the polymer layer (A) on the circuit board,

[0121] (a-4) A step of bonding the circuit board to the support through the uncured composition layer of the polymer layer (A).

[0122] When the uncured composition layer of the polymer layer (A) is laminated in the step (a-1) or the step (a-3), it can be formed as a film on a circuit board or a support, or can be formed by spin coating, slit coating, spraying of each solution, etc., preferably spin coating. In this case, after spin coating, it is pre-baked at a temperature of 80 to 200° C. according to the volatilization conditions of the solvent before use.

[0123] In the step (a-2) or (a-4), in the step of bonding the support body and the circuit board via the polymer layer (A), preferably in a temperature range of 40 to 200°C, more preferably in a temperature range of 60 to 180°C, by uniformly pressing the substrate at this temperature under reduced pressure (particularly under vacuum), a circuit board processed body (laminated substrate) in which the circuit board and the support body are bonded can be formed. At this time, as a wafer bonding device, commercially available wafer bonding devices can be listed, for example, EVG 520IS, 850TB of East View Geospatial Co., Ltd., XBC300 of SUSS MicroTec Group., Synapse V of Tokyo Electron Limited, etc. can be listed.

[0124] One side of the circuit substrate having a circuit forming side and a non-circuit forming side is the circuit forming side, and the other side is the non-circuit forming side. The circuit substrate used in the present invention is usually a semiconductor wafer. Examples of the semiconductor wafer include not only silicon wafers, but also germanium wafers, gallium-arsenic wafers, gallium-phosphorus wafers, gallium-arsenic-aluminum wafers, etc. The thickness of the wafer is not particularly limited, but is typically 600 to 800 μm, more typically 625 to 775 μm.

[0125] As the support, a substrate such as a silicon wafer, a glass plate, or a quartz wafer can be used, but it is not limited thereto. In the present invention, it is not necessary to irradiate the temporary adhesive material layer with radiation energy rays through the support, and the support does not need to be light-transmissive.

[0126] [Step (b)]

[0127] Step (b) is a step of thermally curing the polymer layer (A). After forming a processed body with a circuit board (wafer processed body, laminated body substrate), the polymer layer (A) is cured by heating at 120 to 250° C., preferably 140 to 200° C., for 10 minutes to 4 hours, preferably 30 minutes to 2 hours.

[0128] [Step (c)]

[0129] Step (c) is a step of grinding or polishing the back side (non-circuit forming surface) of the circuit substrate bonded to the support, that is, grinding or polishing the back side of the circuit substrate of the circuit substrate processed body prepared in step (a), thereby thinning the thickness of the circuit substrate. There is no particular restriction on the grinding method of the back side of the circuit substrate, and a known grinding method can be used. It is preferred to grind while cooling the circuit substrate and the grindstone (diamond, etc.) with water. As a device for grinding the back side of the circuit substrate, for example, DAG-810 (trade name) manufactured by DISCO Corporation can be cited. In addition, CMP polishing can also be performed on the back side of the circuit substrate.

[0130] [Step (d)]

[0131] Step (d) is a step of processing a circuit substrate processed body with a non-circuit forming surface ground, that is, a process of processing the back side (non-circuit forming surface) of the circuit substrate processed body that has been thinned by back grinding or back polishing. This process includes various processes used at the wafer level. As examples, the formation of electrodes, the formation of metal wiring, the formation of protective films, etc. can be listed. More specifically, metal sputtering for forming electrodes, etc., wet etching for etching the metal sputtering layer, coating based on a mask for forming metal wiring, formation of patterns of exposure and development, stripping of the resist, dry etching, formation of metal plating, silicon etching for forming TSV, formation of an oxide film on the silicon surface, and other previously known processes can be listed. In addition to these, the wafer that has been thinned by back grinding can be cut into chip size by methods such as cutting.

[0132] [Step (e)]

[0133] Step (e) is a step of separating the support from the processed body with circuit substrate processed in step (d), that is, a step of peeling the support from the processed body with circuit substrate after various processes are performed on the thinned circuit substrate. The peeling step is usually carried out at a relatively low temperature of about room temperature to about 60°C, and the following methods can be listed: a method of fixing one of the circuit substrate with circuit substrate or the support horizontally and lifting the other at a certain angle from the horizontal direction; and a method of attaching a protective film to the ground surface of the ground circuit substrate and peeling the circuit substrate, polymer layer (A) and the protective film from the processed body with circuit substrate in an integrated manner by tearing, etc.

[0134] Any of these peeling methods can be applied to the present invention, but a method in which the circuit board with circuit board processing body is fixed horizontally and the support body is lifted at a certain angle from the horizontal direction is more suitable. These peeling methods are usually carried out at room temperature.

[0135] Furthermore, it is preferred that the step (e) of separating the support from the circuit board processed in the step (d) includes the following steps:

[0136] (e-1) a step of bonding a dicing tape to the processed surface of the processed circuit board;

[0137] (e-2) vacuum adsorbing the diced tape surface onto the adsorption surface;

[0138] (e-3) A step of peeling off the support from the processed circuit board by peeling off the adsorption surface at a temperature range of 10° C. to 100° C. This makes it possible to easily peel off the support from the processed circuit board and also facilitate the subsequent cutting step.

[0139] [Step (f)]

[0140] Step (f) is a step of separating the cured film of the polymer layer (A) from the processed product with circuit board from which the support has been separated, and taking out only the circuit board. Preferably, after the support has been peeled off in step (e), the cured film of the polymer layer (A) is peeled off from the processed circuit board by tape peeling.

[0141] The peeling process is usually carried out at a relatively low temperature of about room temperature to about 60°C, by fixing the processed body with circuit board horizontally, attaching a peeling tape material to the exposed polymer layer (A), and peeling off the tape material by tearing, thereby peeling off the cured film of the polymer layer (A) from the processed circuit board. Any tape material can be used as long as it is peelable, and a tape using a silicone adhesive material is particularly preferred, for example, polyester film adhesive tape No. 646S, No. 648, etc. manufactured by Teraoka Seisakusho Co., Ltd. can be used.

[0142] [Step (g)]

[0143] Step (g) is a step of separating the support and the polymer layer (A) from the processed body with circuit board processed in step (d) as a whole, and taking out only the circuit board, that is, after various processes are performed on the thinned circuit board, only the thinned circuit board is separated from the processed body with circuit board. This step is usually carried out at a relatively low temperature of about room temperature to about 60°C, and the following methods can be listed: a method of fixing one of the circuit board with circuit board or the support in the processed body with circuit board horizontally and lifting the other at a certain angle from the horizontal direction; and a method of attaching a protective film to the ground surface of the ground circuit board and peeling the circuit board and the protective film from the processed body with circuit board by tearing, etc.

[0144] Any of the above-mentioned peeling methods can be applied to the present invention, but a method in which the circuit substrate with a circuit substrate processing body is fixed horizontally and the support body is lifted at a certain angle from the horizontal direction; and a method in which a protective film is attached to the ground surface of the circuit substrate with a circuit substrate and the circuit substrate with a circuit substrate and the protective film are peeled off by tearing. These peeling methods are usually carried out at room temperature.

[0145] In addition, the step (g) of integrally separating the support and the polymer layer (A) from the processed substrate with circuit to take out only the substrate with circuit preferably includes the following steps:

[0146] (g-1) a step of attaching a dicing tape to the processed surface of the processed circuit board,

[0147] (g-2) a step of vacuum-adsorbing the dicing tape surface onto the adsorption surface,

[0148] (g-3) A step of peeling the support from the processed circuit board by peeling at a temperature of the adsorption surface in a temperature range of 10° C. to 100° C. This makes it possible to easily peel the support from the processed circuit board and also facilitate the subsequent cutting step.

[0149] In addition, after only the circuit substrate is separated from the processed body with circuit substrate that has been processed from step (f) to step (g), a step (h) of cleaning the surface of the circuit substrate may be performed. The cleaning treatment may be performed by wet processing using an organic solvent, an alkaline solution, an acid solution, or the like, or by dry processing such as dry etching.

[0150] The process (h) can use hydrocarbon organic solvents, for example, specifically, pentane, hexane, cyclohexane, decane, isononane, p-menthane, terpenes, isododecane, dipentene, etc. These solvents can be used alone or in combination of two or more. In addition, when it is difficult to remove, alkalis and acids can be added to the above solvents. As examples of alkalis, amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, ammonia, and ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide can be used. As acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. In terms of concentration in the cleaning solution, the added amount is 0.01 to 10% by mass, preferably 0.1 to 5% by mass. In addition, in order to improve the removability of residues, an existing surfactant can be added. As a cleaning method, it can be a method of using the above liquid and cleaning with a blade, a cleaning method using a sprayer, and a method of immersing in a cleaning liquid tank. The temperature is suitably 10 to 80° C., preferably 15 to 65° C. If necessary, after cleaning with the above-mentioned cleaning solution, it can be washed with water or rinsed with alcohol and dried to obtain a thin wafer.

[0151] Example

[0152] The present invention will be specifically described below with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

[0153] (Resin Solution Preparation Example 1)

[0154] In a solution consisting of 100 parts by mass of a polydimethylsiloxane having 2.5 mol% of vinyl groups in the molecular side chain and a number average molecular weight (Mn) of 30,000 and 200 parts by mass of toluene, 40 parts by mass of an organohydrogenpolysiloxane represented by the following formula (M-1) and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 0.2 parts by mass of a platinum catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd.) was further added, and filtered using a 0.2 μm membrane filter to obtain a thermosetting silicone polymer solution (A1). In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl groups in the organopolysiloxane having alkenyl groups was 1.1.

[0155] [Chemical formula 1]

[0156]

[0157] [Resin solution preparation example 2]

[0158] To a solution consisting of 50 parts by mass of a polydimethylsiloxane having 2.5 mol% of vinyl groups in a molecular side chain and a number average molecular weight (Mn) of 30,000 and 100 parts by mass of toluene, 40 parts by mass of the above-mentioned organohydrogenpolysiloxane (M-1), and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 4 / 2 unit (Q unit), 48 mol% (CH3)3SiO 1 / 2 unit (M unit) and 2 mol% (CH2=CH)3SiO 1 / 2 A vinylmethylsiloxane having a resin structure composed of a unit (Vi unit) was prepared. 0.2 parts by mass of a platinum catalyst CA T-PL-5 was further added, and the mixture was filtered using a 0.2 μm membrane filter to obtain a heat-curable silicone polymer solution (A2) containing a Q unit when cured. The Q unit was measured by Si-NMR. In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl group in the organopolysiloxane having an alkenyl group was 1.0.

[0159] [Resin solution preparation example 3]

[0160] In a solution consisting of 50 parts by mass of a polydimethylsiloxane having 2.5 mol% of vinyl groups in the molecular side chain and a number average molecular weight (Mn) of 30,000 and 100 parts by mass of toluene, a solution consisting of 50 parts by mass of a polydimethylsiloxane having 0.1 mol% of vinyl groups in the molecular side chain and a number average molecular weight (Mn) of 100,000 and 100 parts by mass of toluene, 20 parts by mass of an organohydrogenpolysiloxane (M-1), and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 0.2 parts by mass of a platinum catalyst CAT-PL-5 was further added, and the mixture was filtered using a 0.2 μm membrane filter to obtain a thermosetting silicone polymer solution (A3). In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl groups in the organopolysiloxane having alkenyl groups was 1.0.

[0161] [Resin solution preparation example 4]

[0162] To a solution consisting of 25 parts by mass of polydimethylsiloxane having 2.5 mol% of vinyl groups in molecular side chains and a number average molecular weight (Mn) of 30,000 and 50 parts by mass of toluene, a solution consisting of 25 parts by mass of polydimethylsiloxane having 0.1 mol% of vinyl groups in molecular side chains and a number average molecular weight (Mn) of 100,000 and 50 parts by mass of toluene, a solution consisting of 50 parts by mass of vinylmethylsiloxane and 100 parts by mass of toluene, 35 parts by mass of organohydrogenpolysiloxane (M-1), and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 4 / 2 unit (Q unit), 48 mol% (CH3)3SiO 1 / 2 unit (M unit) and 2 mol% (CH2=CH)3SiO 1 / 2 A vinylmethylsiloxane having a resin structure composed of a unit (Vi unit) was prepared. 0.2 parts by mass of a platinum catalyst CAT-PL-5 was further added, and the mixture was filtered using a 0.2 μm membrane filter to obtain a heat-curable silicone polymer solution (A4) containing a Q unit when cured. The Q unit was measured by Si-NMR. In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl group in the organopolysiloxane having an alkenyl group was 1.1.

[0163] [Resin solution preparation example 5]

[0164] To a solution consisting of 20 parts by mass of a polydimethylsiloxane having 0.1 mol% of vinyl groups in the molecular side chain and a number average molecular weight (Mn) of 100,000 and 50 parts by mass of toluene, a solution consisting of 80 parts by mass of a vinylmethylsiloxane and 160 parts by mass of toluene, 35 parts by mass of an organohydrogenpolysiloxane (M-1), and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 4 / 2 unit (Q unit), 48 mol% (CH3)3SiO 1 / 2 unit (M unit) and 2 mol% (CH2=CH)3SiO 1 / 2 A vinylmethylsiloxane having a resin structure composed of a unit (Vi unit) was prepared. 0.2 parts by mass of a platinum catalyst CAT-PL-5 was further added, and the mixture was filtered using a 0.2 μm membrane filter to obtain a thermosetting silicone polymer solution (A5). In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl group in the organopolysiloxane having alkenyl groups was 0.9.

[0165] [Resin Solution Preparation Example 6]

[0166] In a solution consisting of 100 parts by mass of a polydimethylsiloxane having 0.1 mol% of vinyl groups in the molecular side chains and a number average molecular weight (Mn) of 100,000 and 200 parts by mass of toluene, 0.5 parts by mass of an organohydrogenpolysiloxane (M-2) and 0.7 parts by mass of ethynylcyclohexanol were added and mixed. 0.5 parts by mass of a platinum catalyst CAT-PL-5 (manufactured by Shin-Etsu Chemical Co., Ltd.) was further added, and the mixture was filtered using a 0.2 μm membrane filter to obtain a thermosetting silicone polymer solution (A6). In addition, in the resin solution, the molar ratio of the organohydrogenpolysiloxane containing Si-H groups to the alkenyl groups in the organopolysiloxane having alkenyl groups was 2.9.

[0167] [Chemical formula 2]

[0168]

[0169] (Examples 1 to 5 and Comparative Examples 1 and 2)

[0170] - Peel-off force test - Support

[0171] After spin coating the above solutions (A1) to (A6) on a 200 mm silicon wafer (thickness: 725 μm) as a support, heat it at 50°C for 3 minutes on a hot plate to form a material corresponding to the (A) layer with a film thickness shown in Table 1, and place it in a 200°C oven under a nitrogen atmosphere for 2 hours to solidify the polymer layer (A). Then, 5 strips of 150 mm long × 25 mm wide polyimide tape were attached to the polymer layer (A), and the (A) layer of the portion where the tape was not attached was removed. Using Shimadzu Corporation's AUTOGRAPH (AG-1), peel 120 mm from one end of the tape at a speed of 5 mm / second in a 180° peeling manner, and the average force required at this time (120 mm distance × 5 times) was taken as the tear-off peeling force of the temporary adhesive layer. In addition, the case where the peeling surface is between the polymer layer (A) and the silicon wafer surface is judged as acceptable and the measurement result is recorded, and the case where the peeling surface is between the tape adhesive surface and the polymer layer (A) surface is judged as unacceptable and indicated by "X". When the judgment is "X", the evaluation of the subsequent tests is stopped.

[0172] - Peel-off force test - substrate

[0173] After spin coating the above solutions (A1) to (A5) on a 200 mm copper pillar silicon wafer (thickness: 725 μm) with copper pillars of 10 μm in height and 40 μm in diameter formed on the entire surface, the solution was heated at 50°C for 3 minutes using a hot plate to form a material corresponding to the (A) layer with a film thickness shown in Table 1, and the material was placed in a 200°C oven under a nitrogen atmosphere for 2 hours to cure the polymer layer (A). Then, 5 polyimide tapes of 150 mm in length and 25 mm in width were attached to the polymer layer (A), and the (A) layer of the portion where the tape was not attached was removed. Using AUTOGRAPH (AG-1) of Shimadzu Corporation, 120 mm was peeled off from one end of the tape at a speed of 5 mm / second in a 180° peeling manner, and the average of the force required at this time (120 mm distance × 5 times) was taken as the tear-off peeling force of the temporary adhesive layer. In addition, the case where the peeling surface is between the polymer layer (A) and the surface of the copper pillar-carrying silicon wafer is judged as acceptable and the measurement result is recorded. The case where the peeling surface is between the tape adhesive surface and the polymer layer (A) surface or the case where the polymer layer (A) is broken in the middle and the peeling surface is changed is judged as unacceptable and indicated by "×". If it is judged as "×", the evaluation of the subsequent test is stopped.

[0174] - Adhesion Test -

[0175] After spin coating the above solutions (A1) to (A5) on a 200 mm glass wafer (thickness: 700 μm) as a support, the solution was heated at 50°C for 3 minutes using a hot plate, thereby forming a material corresponding to the (A) layer with a film thickness shown in Table 1. Using the wafer bonding device EVG520IS of East View Geospatial Co., Ltd., a 200 mm diameter silicon wafer (thickness: 725 μm) with copper pillars of 10 μm in height and 40 μm in diameter formed on the entire surface was bonded to the (A) layer in a vacuum so that the copper pillar surface faced the polymer layer (A) surface, thereby manufacturing a processed body (laminated body) with a circuit board. The bonding temperature was 50°C and the indoor pressure during bonding was 10 -3 mbar or less and a load of 10 kN. After bonding, the bonded substrates were temporarily heated at 200°C for 2 hours in an oven to cure the (A) layer, and then cooled to room temperature. The bonding condition of the surface was then visually confirmed. The condition without abnormalities such as bubbles on the surface was evaluated as good and indicated by "○", and the condition with abnormalities was evaluated as poor and indicated by "×".

[0176] -Back grinding resistance test-

[0177] The back of the silicon wafer was ground using a grinding machine (manufactured by DISCO Corporation, DAG810) with a diamond grindstone. The substrate was ground to a final thickness of 50 μm, and then an optical microscope (100 times) was used to check for abnormalities such as cracks and peeling. The situation where no abnormality occurred was evaluated as good and indicated by "○", and the situation where an abnormality occurred was evaluated as poor and indicated by "×".

[0178] -Heat resistance test-

[0179] After the backside of the silicon wafer was ground, the processed body with the circuit board was heated on a hot plate at 260°C for 10 minutes, and then checked for any abnormal appearance. The case where no abnormal appearance occurred was evaluated as good and indicated by "○", the case where a little wafer bending was observed but no abnormalities such as voids, wafer expansion or wafer breakage occurred was evaluated as generally good and indicated by "△", and the case where abnormal appearance such as voids, wafer expansion or wafer breakage occurred was evaluated as poor and indicated by "×".

[0180] -Support peeling test-

[0181] The peelability of the support is evaluated by the following method. First, using a cutting frame, a dicing tape is attached to the processed surface (non-circuit forming surface) of the wafer thinned to 50 μm after the heat resistance test, and the dicing tape surface is placed on an adsorption plate by vacuum adsorption. Then, at room temperature, one point of the glass is clamped with tweezers to peel off the glass substrate. The case where the 50 μm wafer can be peeled off without breaking it is indicated as "○", and the case where abnormalities such as cracks occur is evaluated as poor and indicated as "×".

[0182] -Tape peeling test-

[0183] The tape peeling test is performed by the following method. First, the dicing tape surface of the wafer that has completed the support peeling test is set on an adsorption plate by vacuum adsorption. Then, a polyester film adhesive tape No. 648 manufactured by Teraoka Seisakusho co., Ltd. is adhered to the cured film of the polymer layer (A) exposed on the surface, and the cured film of the polymer layer (A) is peeled off from the wafer by performing tape peeling. The case where the peeling can be performed without breaking the 50μm wafer is indicated as "○", and the case where abnormalities such as cracks occur is evaluated as poor and indicated by "×".

[0184] [Table 1]

[0185]

[0186] As shown in Table 1, it can be seen that in Examples 1 to 5 that meet the necessary conditions of the present invention, temporary adhesion and peeling are easy. On the other hand, in Comparative Example 1, the peeling force of the (A) layer was too strong, so the support could not be peeled off. In addition, the peeling force of Comparative Example 2 was stronger than that of Comparative Example 1, so it could not be measured when measuring the peeling force. It can be seen that by setting the peeling force to an appropriate value, processability can be ensured.

[0187] The present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any technical solution having substantially the same configuration and having the same function and effect as the technical concept described in the claims of the present invention is included in the technical scope of the present invention.

Claims

1. A processed body with a circuit board, wherein: A temporary adhesive material layer is laminated on a support in a releasable manner, and the temporary adhesive material layer is laminated on a surface of a circuit substrate having a circuit surface on the surface and requiring processing on the back side in a releasable manner, and the circuit substrate processed body is formed in the order of the support, the temporary adhesive material layer, and the circuit substrate, and the circuit substrate processed body is characterized in that: The temporary adhesive material layer is formed of a heat-curable silicone polymer layer (A), The cured product of the thermosetting siloxane polymer layer (A) contains 0.5 to 19 mol % of R 1 R 2 R 3 SiO 1 / 2 The siloxane unit represented by the formula (M) is 62 to 99.5 mol% of R 4 R 5 SiO 2 / 2 The siloxane unit represented by the formula (D) is 0.000 to 0.005 mol% of R 6 SiO 3 / 2 The siloxane unit represented by the formula (T unit); 0.000 to 60.000 mol % of SiO 4 / 2 The siloxane unit represented by is Q unit; wherein R 1 ~R 6 Each represents an unsubstituted or substituted monovalent hydrocarbon group, The polymer layer (A) laminated on the support has a peeling force of 10 to 500 mN / 25 mm when peeled from the upper surface of the support after curing in a 180° peeling test at 5 mm / sec on a 25 mm wide test piece, and The polymer layer (A) laminated on the circuit board has a peeling force of 50 to 1000 mN / 25 mm when peeled from the upper surface of the circuit board after curing in a 180° peeling test at 5 mm / sec on a 25 mm wide test piece.

2. The processed body with circuit board according to claim 1, characterized in that: The heat-curable siloxane polymer layer (A) is a cured product of a composition containing the following components: (A-1) an organopolysiloxane having two or more alkenyl groups in one molecule, (A-2) an organohydrogenpolysiloxane containing two or more hydrogen atoms bonded to silicon atoms (Si—H groups) in one molecule, and (A-3) a platinum catalyst, The thermosetting siloxane polymer layer (A) contains the components (A-1) and (A-2) in such an amount that the molar ratio of Si—H groups in the component (A-2) to alkenyl groups in the component (A-1) is 0.3 to 10.

3. The processed body with circuit board according to claim 2, characterized in that: The organopolysiloxane (A-1) having two or more alkenyl groups in one molecule contains SiO 4 / 2 The siloxane unit represented is the Q unit.

4. The processed body with circuit board according to claim 2, characterized in that: The thermosetting siloxane polymer layer (A) is a cured product of a composition containing, in addition to the component (A-1), the component (A-2), and the component (A-3), any one or both of an organic solvent (A-4) and a reaction control agent (A-5).

5. The processed body with circuit board according to claim 3, characterized in that: The thermosetting siloxane polymer layer (A) is a cured product of a composition containing, in addition to the component (A-1), the component (A-2), and the component (A-3), any one or both of an organic solvent (A-4) and a reaction control agent (A-5).

6. The processed body with circuit board according to claim 1, characterized in that: The storage modulus of the cured product of the heat-curable silicone polymer layer (A) at 25°C is 1×10 6 ~1×10 9 Pa.

7. The processed body with circuit board according to claim 2, characterized in that: The storage modulus of the cured product of the heat-curable silicone polymer layer (A) at 25°C is 1×10 6 ~1×10 9 Pa.

8. A method for processing a circuit board, characterized in that: It includes the following steps: (a) a step of preparing a processed body with a circuit board according to any one of claims 1 to 7, (b) a step of thermally curing the thermosetting siloxane polymer layer (A); (c) grinding or polishing the back surface of the circuit board; (d) a step of processing the back surface of the circuit board; (e) a step of separating the support from the circuit board-attached body, (f) A step of separating the cured film of the polymer layer (A) from the substrate with circuit processed body from which the support is separated, to take out only the substrate with circuit.

9. The method for processing a circuit board according to claim 8, characterized in that: The step of preparing the processed body with circuit board in the step (a) includes the following steps: (a-1) a step of laminating an uncured composition layer of the thermosetting siloxane polymer layer (A) on the support, (a-2) A step of bonding the support and the board with circuit together via the uncured composition layer of the polymer layer (A).

10. The method for processing a circuit board according to claim 8, wherein: The step of preparing the processed body with circuit board in the step (a) includes the following steps: (a-3) a step of laminating the uncured composition layer of the polymer layer (A) on the circuit board, (a-4) A step of bonding the circuit board to the support through the uncured composition layer of the polymer layer (A).

11. A method for processing a circuit board, characterized in that: It includes the following steps: (a) a step of preparing a processed body with a circuit board according to any one of claims 1 to 7, (b) a step of thermally curing the thermosetting siloxane polymer layer (A); (c) grinding or polishing the back surface of the circuit board; (d) a step of processing the back surface of the circuit board; (g) A step of separating the support and the polymer layer (A) integrally from the substrate with circuit processed body to remove only the substrate with circuit.

12. The method for processing a circuit board according to claim 11, wherein: The step of preparing the processed body with circuit board in the step (a) includes the following steps: (a-1) a step of laminating an uncured composition layer of the thermosetting siloxane polymer layer (A) on the support, (a-2) A step of bonding the support and the board with circuit together via the uncured composition layer of the polymer layer (A).

13. The method for processing a circuit board according to claim 11, wherein: The step of preparing the processed body with circuit board in the step (a) includes the following steps: (a-3) a step of laminating the uncured composition layer of the polymer layer (A) on the circuit board, (a-4) A step of bonding the circuit board to the support through the uncured composition layer of the polymer layer (A).

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