IPM protection system for flywheel energy storage device

Abstract

The present invention relates to the technical field of IPM protection circuits, and in particular to an IPM protection system for a flywheel energy storage device, the IPM protection system comprising: a signal generating unit, an IPM unit, a short circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver, the signal generating unit generates and outputs a first pulse signal and a second pulse signal, the line driver is respectively connected to the comparator, the IPM unit and the signal generating unit, the comparator outputs a shutdown signal according to the output signals of the short circuit protection unit, the over-temperature protection unit and the over-current protection unit, and the line driver controls whether the first pulse signal and the second pulse signal are transmitted to the IPM unit according to the shutdown signal. The IPM protection system is entirely composed of hardware, and compared with a system combining software and hardware, it simplifies the system structure, reduces the difficulty of system development, improves the safety and accuracy of the system, and also significantly improves the efficiency of information processing.

Description

Technical Field

[0001] The invention relates to the technical field of IPM protection circuits, and in particular to an IPM protection system for a flywheel energy storage device. Background Art

[0002] IPM (Intelligent Power Module) is an advanced new power switching device, which has the advantages of high current density, low saturation voltage and high voltage resistance of GTR (high power transistor), and the advantages of high input impedance, high switching frequency and low driving power of MOSFET (field effect transistor). IPM integrates logic, control, detection and protection circuits, is easy to use and has a wide range of applications. It not only reduces the size and development time of the system, but also greatly enhances the reliability of the system. It adapts to the development direction of today's power devices, such as modularization, compounding and power integrated circuits (PIC), and has received more and more attention in the field of power electronics.

[0003] As an important part of the control system, IPM should pay special attention to the handling and protection of abnormal working status of IPM during use. However, the current protection circuit practices are to sample the DC bus voltage, temperature and current signals inside the IPM unit and transmit them to the main controller MCU. By programming the MCU, the sampled data is compared and analyzed to determine whether the circuit has overcurrent and overtemperature. If overcurrent and overtemperature occur, the MCU sends a blocking signal. This method requires a combination of software and hardware, which increases the difficulty and workload of development, and the price of MCU is higher than that of other electronic components, which increases the cost.

[0004] In view of this, overcoming the above defects in the prior art and providing a new IPM protection system for a flywheel energy storage device has become a technical problem to be solved urgently in the art. Summary of the invention

[0005] The object of the present invention is to provide an IPM protection system for a flywheel energy storage device in view of the above-mentioned defects in the prior art.

[0006] The purpose of the present invention can be achieved by the following technical measures:

[0007] An embodiment of the present invention provides an IPM protection system for a flywheel energy storage device, the IPM protection system comprising: a signal generating unit, an IPM unit, a short circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver;

[0008] The signal generating unit is used to generate and output a first pulse signal and a second pulse signal, and the IPM unit is provided with a first IGBT component and a second IGBT component;

[0009] The input end of the short-circuit protection unit is connected to the IPM unit and the signal generating unit respectively, the output end of the short-circuit protection unit is connected to the comparator, and the short-circuit protection unit collects the gate-level voltage signal of the first IGBT component, the gate-level voltage signal of the second IGBT component, the first pulse signal and the second pulse signal, and outputs a short-circuit protection signal to the comparator;

[0010] The input end of the over-temperature protection unit is connected to the IPM unit, the output end of the over-temperature protection unit is connected to the comparator, and the over-temperature protection unit collects the temperature of the first IGBT component and the temperature of the second IGBT component and outputs an over-temperature protection signal to the comparator;

[0011] The input end of the overcurrent protection unit is connected to the IPM unit, the output end of the overcurrent protection unit is connected to the comparator, the overcurrent protection unit collects the current signal flowing through the first IGBT component in the IPM unit and the current signal flowing through the second IGBT component in the IPM unit and outputs an overcurrent protection signal to the comparator;

[0012] The line driver is respectively connected to the comparator, the IPM unit, and the signal generating unit. When the short-circuit protection signal, the over-temperature protection signal, and the over-current protection signal are in a low-level state at the same time, the shutdown signal output by the comparator is in a low-level state, and the line driver controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit. Otherwise, the shutdown signal output by the comparator is in a high-level state, and the line driver controls the blocking of the first pulse signal and the second pulse signal from being transmitted to the IPM unit.

[0013] According to one embodiment of the present invention, the line driver includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the comparator, the input pin is connected to the signal generating unit, and the output pin is connected to the IPM unit. When the shutdown signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM unit through the enable pin, and when the shutdown signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM unit.

[0014] According to one embodiment of the present invention, the short-circuit protection unit includes a short-circuit protection circuit, two first voltage sensors arranged on the first IGBT component and two second voltage sensors arranged on the second IGBT component, the first voltage sensor and the second voltage sensor are respectively connected to the short-circuit protection circuit, the gate-level voltage signal of the first IGBT component includes an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, the gate-level voltage signal of the second IGBT component includes an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component, the two first voltage sensors are respectively used to collect the upper gate-level voltage signal of the first IGBT component and the lower gate-level voltage signal of the first IGBT component, and the two second voltage sensors are respectively used to collect the upper gate-level voltage signal of the second IGBT component and the lower gate-level voltage signal of the second IGBT component.

[0015] According to one embodiment of the present invention, the short-circuit protection circuit includes: a first signal input circuit module, a first signal comparison circuit module and a first signal output circuit module connected in sequence, the first signal input circuit module is respectively connected to the first voltage sensor, the second voltage sensor and the signal generating unit, and the first signal output module is connected to the comparator; the first signal comparison circuit module includes a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, the input end of the OR gate logic gate chip is respectively connected to the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, and the output end of the OR gate logic gate chip is connected to the first signal The output circuit module is connected, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, the third AND gate logic gate chip outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.

[0016] According to one embodiment of the present invention, the over-temperature protection unit includes an over-temperature protection circuit, a first temperature sensor provided on the first IGBT component, and a second temperature sensor provided on the second IGBT component, the first temperature sensor and the second temperature sensor are respectively connected to the over-temperature protection circuit, the over-temperature protection circuit is connected to the comparator, the first temperature sensor is used to collect the temperature of the first IGBT component, the second temperature sensor is used to collect the temperature of the second IGBT component, and the over-temperature protection circuit outputs an over-temperature protection signal to the comparator according to the temperature of the first IGBT component and the temperature of the second IGBT component.

[0017] According to an embodiment of the present invention, the over-temperature protection circuit includes: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, the second signal input circuit module includes a first comparison chip, a first voltage divider circuit and a second voltage divider circuit, one end of the first voltage divider circuit is connected to the first temperature sensor, the other end of the first voltage divider circuit is connected to the negative input end of the first comparison chip, one end of the second voltage divider circuit is connected to the second temperature sensor, the other end of the second voltage divider circuit is connected to the positive input end of the first comparison chip, the output end of the first comparison chip is connected to the second signal comparison circuit module, the first voltage divider circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the first input voltage value, and transmits it to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

[0018] According to one embodiment of the present invention, the second signal input circuit module also includes a first analog switch arranged at the output end of the first comparison chip, the first analog switch includes a first signal input end connected to the output end of the first comparison chip, a first signal output end connected to the second signal comparison circuit module, a first input end connected between the negative input end of the first comparison chip and the first voltage divider circuit, and a second input end connected between the positive input end of the first comparison chip and the second voltage divider circuit.

[0019] According to one embodiment of the present invention, the second signal comparison circuit module includes a second comparison chip and a first adjustment circuit, the positive input terminal of the second comparison chip is connected to the first adjustment circuit, the negative input terminal of the second comparison chip is connected to the first signal output terminal, the output terminal of the second comparison chip is connected to the second signal output circuit module, and the second comparison chip compares the first input voltage value with the preset over-temperature voltage value output by the first adjustment circuit, and outputs the comparison result to the second signal output circuit module.

[0020] According to one embodiment of the present invention, the overcurrent protection unit includes an overcurrent protection circuit, a first Hall current sensor arranged on the first IGBT component and a second Hall current sensor arranged on the second IGBT component, the first Hall current sensor and the second Hall current sensor are respectively connected to the overcurrent protection circuit, the overcurrent protection circuit is connected to the comparator, the first Hall current sensor is used to collect the current signal flowing through the first IGBT component in the IPM unit and automatically convert it into a third voltage value, the second Hall current sensor is used to collect the current signal flowing through the second IGBT component in the IPM unit and automatically convert it into a fourth voltage value, and the overcurrent protection circuit outputs an overcurrent protection signal to the comparator according to the third voltage value and the fourth voltage value.

[0021] According to one embodiment of the present invention, the overcurrent protection circuit includes: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module connected in sequence, the third signal input circuit module includes a third comparison chip, the negative input terminal of the third comparison chip is connected to the first Hall current sensor, the positive input terminal of the third comparison chip is connected to the second Hall current sensor, the output terminal of the third comparison chip is connected to the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, takes the larger voltage value between the third voltage value and the fourth voltage value as the second input voltage value, and transmits it to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

[0022] According to one embodiment of the present invention, the third signal input circuit module also includes a second analog switch arranged at the output end of the third comparison chip, the second analog switch includes a second signal input end connected to the output end of the third comparison chip, a second signal output end connected to the third signal comparison circuit module, a third input end connected to the negative input end of the third comparison chip, and a fourth input end connected to the positive input end of the third comparison chip.

[0023] According to one embodiment of the present invention, the third signal comparison circuit module includes a fourth comparison chip and a second adjustment circuit, the negative input terminal of the fourth comparison chip is connected to the second adjustment circuit, the positive input terminal of the fourth comparison chip is connected to the second signal output terminal, and the output terminal of the fourth comparison chip is connected to the third signal output circuit module. The fourth comparison chip compares the second input voltage value with the preset overcurrent voltage value output by the second adjustment circuit, and outputs the comparison result to the third signal output circuit module.

[0024] On the one hand, the IPM protection system of the present invention adds a set of short-circuit detection for input pulse signals on the basis of the original short-circuit detection for IGBT components. When an erroneous pulse signal is input, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM unit, thereby achieving the purpose of protecting the IGBT components; on the other hand, a comparator is used to process and judge the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal, and output a shutdown signal to the line driver. The line driver acts as a switch and controls the passing / blocking of the first pulse signal and the second pulse signal according to the level state of the shutdown signal. The IPM protection system of the embodiment of the present invention is entirely composed of hardware. Compared with a system combining software and hardware, the peripheral circuits required by the MCU controller are reduced, the system structure is simplified, and no software programming is required, which reduces the workload and development difficulty of system development, improves the security and accuracy of the system, and also significantly improves the efficiency of information processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a structural schematic diagram of the IPM protection system for a flywheel energy storage device of the present invention.

[0026] Figure 2 It is a structural schematic diagram of the short-circuit protection circuit of the present invention.

[0027] Figure 3 It is a structural schematic diagram of the over-temperature protection circuit of the present invention.

[0028] Figure 4 It is a structural schematic diagram of the overcurrent protection circuit of the present invention DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0030] In order to make the description of the present disclosure more detailed and complete, the following provides an illustrative description of the implementation methods and specific examples of the present invention; however, this is not the only form of implementing or using the specific examples of the present invention.

[0031] An embodiment of the present invention discloses an IPM protection system for a flywheel energy storage device. The IPM protection system is suitable for a 200KW flywheel energy storage device on a 1500V subway track.

[0032] Figure 1 An IPM protection system for a flywheel energy storage device is shown in Figure 1 The IPM protection system includes: a signal generating unit 20, an IPM unit 30, a short circuit protection unit (not shown in the figure), an over temperature protection unit (not shown in the figure), an over current protection unit (not shown in the figure), a comparator 40 and a line driver 50. Figure 2 The signal generating unit 20 includes a first generating terminal 201 for generating and outputting a first pulse signal and a second generating terminal 202 for generating and outputting a second pulse signal. The IPM unit 30 is provided with a first IGBT component (not shown in the figure) and a second IGBT component (not shown in the figure).

[0033] For further information, see Figure 1 The input end of the short-circuit protection unit is connected to the IPM unit 30 and the signal generating unit 20 respectively, and the output end of the short-circuit protection unit is connected to the comparator 40. The short-circuit protection unit collects the gate-level voltage signal of the first IGBT component, the gate-level voltage signal of the second IGBT component, the first pulse signal and the second pulse signal and outputs the short-circuit protection signal to the comparator 40.

[0034] The short-circuit protection unit of this embodiment adds a set of short-circuit detection for the input pulse signal on the basis of the original short-circuit detection for the IGBT component. When an erroneous pulse signal is input, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

[0035] For further information, see Figure 1 The input end of the over-temperature protection unit is connected to the IPM unit 30 , the output end of the over-temperature protection unit is connected to the comparator 40 , and the over-temperature protection unit collects the temperature of the first IGBT component and the temperature of the second IGBT component and outputs an over-temperature protection signal to the comparator 40 .

[0036] The over-temperature protection unit of this embodiment blocks the pulse signal from being transmitted when the temperature of the IGBT component is over-temperature, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

[0037] For further information, see Figure 1 The input end of the overcurrent protection unit is connected to the IPM unit 30, and the output end of the overcurrent protection unit is connected to the comparator 40. The overcurrent protection unit collects the current signal flowing through the first IGBT component in the IPM unit 30 and the current signal flowing through the second IGBT component in the IPM unit 30 and outputs the overcurrent protection signal to the comparator 40.

[0038] The overcurrent protection unit of this embodiment blocks the pulse signal from being transmitted further when the temperature of the IGBT component is overcurrent, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

[0039] For further information, see Figure 1 The line driver 50 is respectively connected to the comparator 40, the IPM unit 30, and the signal generating unit 20. When the short-circuit protection signal, the over-temperature protection signal, and the over-current protection signal are in a low-level state at the same time, the shutdown signal output by the comparator 40 is in a low-level state, and the line driver 50 controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit 30. Otherwise, the shutdown signal output by the comparator 40 is in a high-level state, and the line driver 50 controls the blocking of the first pulse signal and the second pulse signal from being transmitted to the IPM unit 30.

[0040] The embodiment of the present invention uses a comparator 40 to process and judge the short circuit protection signal, the over-temperature protection signal and the over-current protection signal, and outputs a shutdown signal to the line driver 50. The line driver 50 acts as a switch, and controls the passing / blocking of the first pulse signal and the second pulse signal according to the level state of the shutdown signal. The IPM protection system of the embodiment of the present invention is entirely composed of hardware. Compared with the system combining software and hardware, it reduces the peripheral circuits required by the MCU controller, simplifies the system structure, and does not require software programming, thereby reducing the workload and development difficulty of system development, improving the safety and accuracy of the system, and significantly improving the efficiency of information processing.

[0041] On the basis of the above embodiment, the line driver 50 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the comparator 40, the input pin is connected to the signal generating unit, and is used to input the first pulse signal and the second pulse signal, the output pin is connected to the IPM unit 30, and is used to output the first pulse signal and the second pulse signal to the IPM unit 30, and the comparator 40 outputs a shutdown signal according to the short circuit protection signal, the over temperature protection signal and the over current protection signal received. The comparator 40 is a three-input OR gate, when the short circuit protection signal, the over temperature protection signal and the over current protection signal are in a low level state at the same time, the shutdown signal output by the comparator 40 is a low level state, otherwise, the shutdown signal output by the comparator 40 is a high level state; when the shutdown signal is in a low level state (the enable pin is low level), the first pulse signal and the second pulse signal are transmitted to the IPM unit 30 through the enable pin, and when the shutdown signal is in a high level state (the enable pin is high level), the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM unit 30.

[0042] According to one embodiment of the present invention, see Figure 2 The short-circuit protection unit includes a short-circuit protection circuit 60, two first voltage sensors (not shown in the figure) provided on the first IGBT component, and two second voltage sensors (not shown in the figure) provided on the second IGBT component, and the first voltage sensor and the second voltage sensor are respectively connected to the short-circuit protection circuit 60. The gate-level voltage signal of the first IGBT component includes an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, and the gate-level voltage signal of the second IGBT component includes an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component. The first IGBT component includes an upper bridge arm and a lower bridge arm, and the two first voltage sensors are respectively used to collect the upper gate voltage signal of the first IGBT component (i.e., the gate voltage signal of the upper bridge arm) and the lower gate voltage signal of the first IGBT component (i.e., the gate voltage signal of the lower bridge arm); the second IGBT component includes an upper bridge arm and a lower bridge arm, and the two second voltage sensors are respectively used to collect the upper gate voltage signal of the second IGBT component (i.e., the gate voltage signal of the upper bridge arm) and the lower gate voltage signal of the second IGBT component (i.e., the gate voltage signal of the lower bridge arm). In this embodiment, the first IGBT component and the second IGBT component can work separately or simultaneously.

[0043] In this embodiment, further see Figure 2The short-circuit protection circuit includes: a first signal input circuit module 601, a first signal comparison circuit module 602 and a first signal output circuit module 603 connected in sequence, the first signal comparison circuit module 602 includes a first AND gate logic gate chip 6020, a second AND gate logic gate chip 6021, a third AND gate logic gate chip 6022 and an OR gate logic gate chip 6023, the input end of the OR gate logic gate chip 6023 is respectively connected to the output end of the first AND gate logic gate chip 6020, the output end of the second AND gate logic gate chip 6021, and the output end of the third AND gate logic gate chip 6022, the output end of the OR gate logic gate chip 6023 is connected to the first signal output circuit module 603, the first AND gate logic gate chip 6020 is grounded and connected to a reference voltage generator, the second AND gate logic gate chip 6021 is grounded and connected to a reference voltage generator, the third AND gate logic gate chip 6022 is grounded and connected to a reference voltage generator, and the OR gate logic gate chip 6023 is grounded and connected to a reference voltage generator. The first AND gate logic gate chip 6020 outputs a first level signal according to the first pulse signal and the second pulse signal. When the first pulse signal and the second pulse signal are both high level, the first level signal output by the first AND gate logic gate chip 6020 is high level, otherwise, the first level signal output by the first AND gate logic gate chip 6020 is low level. The second AND gate logic gate chip 6021 outputs a second level signal according to the upper gate voltage signal of the first IGBT component and the lower gate voltage signal of the first IGBT component. When the upper gate voltage signal of the first IGBT component and the lower gate voltage signal of the first IGBT component are both high level, the second level signal output by the second AND gate logic gate chip 6021 is high level, otherwise, the second level signal output by the second AND gate logic gate chip 6021 is low level. The third AND gate logic gate chip 6022 outputs a third level signal according to the upper gate voltage signal of the second IGBT component and the lower gate voltage signal of the second IGBT component. When the upper gate voltage signal of the second IGBT component and the lower gate voltage signal of the second IGBT component are both high level, the third level signal output by the third AND gate logic gate chip 6022 is high level, otherwise, the third level signal output by the third AND gate logic gate chip 6022 is low level. The OR gate logic gate chip 6023 outputs a fourth level signal to the first signal output circuit module 603 according to the first level signal, the second level signal and the third level signal. When only one level signal among the first level signal, the second level signal and the third level signal is high level, the fourth level signal output by the OR gate logic gate chip 6023 is high level, otherwise, the fourth level signal output by the OR gate logic gate chip 6023 is low level, and the first signal output circuit module 603 outputs a short circuit protection signal to the comparator 40 according to the fourth level signal.

[0044] For further information, see Figure 2, the first signal output circuit module 603 includes two first NOT gate chips 6030 connected in series in sequence. The first NOT gate chip 6030 is used to enhance the fourth level signal and stabilize the fourth level signal. When the fourth level signal is at a low level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a low level, indicating that the signal is normal; when the fourth level signal is at a high level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a high level, indicating that the signal is abnormal.

[0045] For further information, see Figure 2 The first signal input circuit module 601 includes a first resistor 1 and a second resistor 2. The first resistor 1 is respectively connected in series with the input end of the first AND gate logic gate chip 6020 and the first generating end 201, and the second resistor 2 is respectively connected in series with the input end of the first AND gate logic gate chip 6020 and the second generating end 202.

[0046] For further information, see Figure 2 The first signal input circuit module 601 includes a third resistor 3 and a fourth resistor 4. The third resistor 3 is respectively connected in series with the input end of the second AND gate logic gate chip 6021 and one of the first voltage sensors. The fourth resistor 4 is respectively connected in series with the input end of the second AND gate logic gate chip 6021 and another first voltage sensor.

[0047] For further information, see Figure 2 The first signal input circuit module 601 includes a fifth resistor 5 and a sixth resistor 6. The fifth resistor 5 is respectively connected in series with the input end of the third AND gate logic gate chip 6022 and one of the second voltage sensors. The sixth resistor 6 is respectively connected in series with the input end of the third AND gate logic gate chip 6022 and another second voltage sensor.

[0048] According to one embodiment of the present invention, see Figure 3 The over-temperature protection unit includes an over-temperature protection circuit 70, a first temperature sensor 301 arranged on the first IGBT component, and a second temperature sensor 302 arranged on the second IGBT component. The first temperature sensor 301 and the second temperature sensor 302 are respectively connected to the over-temperature protection circuit 70. The over-temperature protection circuit 70 is connected to the comparator 40. The first temperature sensor 301 is used to collect the temperature of the first IGBT component, and the second temperature sensor 302 is used to collect the temperature of the second IGBT component. The over-temperature protection circuit 70 outputs an over-temperature protection signal to the comparator 40 according to the temperature of the first IGBT component and the temperature of the second IGBT component.

[0049] For further information, see Figure 3The over-temperature protection circuit 70 includes: a second signal input circuit module 701, a second signal comparison circuit module 702 and a second signal output circuit module 703 connected in sequence, the second signal input circuit module 701 includes a first comparison chip 7010, a first voltage divider circuit 7011 and a second voltage divider circuit 7012, the first comparison chip 7010 is grounded and connected to a reference voltage generator, one end of the first voltage divider circuit 7011 is connected to the first temperature sensor 301, the other end of the first voltage divider circuit 7011 is connected to the negative input end of the first comparison chip 7010, one end of the second voltage divider circuit 7012 is connected to the second temperature sensor 302, and the other end of the second voltage divider circuit 7012 is connected to the positive input end of the first comparison chip 7010 The output end of the first comparison chip 7010 is connected to the second signal comparison circuit module 703, the first voltage divider circuit 7011 outputs a first voltage value corresponding to the temperature of the first IGBT component, and the second voltage divider circuit 7012 outputs a second voltage value corresponding to the temperature of the second IGBT component. The first comparison chip 7010 collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the first input voltage value, and transmits it to the signal second comparison circuit module 702; the second signal comparison circuit module 702 compares the first input voltage value with the preset over-temperature voltage value, and the second signal output circuit module 703 outputs an over-temperature protection signal to the comparator 40 according to the comparison result of the second signal comparison circuit module 702.

[0050] In this embodiment, directly detecting the temperature of the IGBT component is equivalent to detecting the temperature of the IPM unit 10, the first temperature sensor 301 and the second temperature sensor 302 are equivalent to thermistors, the voltage value at TP1 is a first voltage value, and the voltage value at TP2 is a second voltage value. When the temperature of the first IGBT component increases, the resistance of the first temperature sensor 301 decreases, and the voltage value at TP1 decreases as the resistance of the first temperature sensor 301 decreases, that is, the voltage value of TP1 is inversely proportional to the temperature of the first IGBT component; when the temperature of the second IGBT component increases, the resistance of the second temperature sensor 302 decreases, and the voltage value at TP2 decreases as the resistance of the second temperature sensor 302 decreases, that is, the voltage value of TP2 is inversely proportional to the temperature of the second IGBT component.

[0051] For further information, see Figure 3The second signal input circuit module 701 further includes a first analog switch 7013 provided at the output end of the first comparison chip 7010. The first analog switch 7013 includes a first signal input end (i.e., Vin end) connected to the output end of the first comparison chip 7010, a first signal output end (i.e., OUT end) connected to the second signal comparison circuit module 702, a first input end (i.e., NO end) connected between the negative input end of the first comparison chip 7010 and the first voltage divider circuit 7011, and a second input end (i.e., NC end) connected between the positive input end of the first comparison chip 7010 and the second voltage divider circuit 7012. The second analog switch 7013 further includes a ground end (i.e., GND end) and a power supply end (i.e., Vcc end) connected to a reference voltage generator.

[0052] In this embodiment, when the first voltage value is greater than the second voltage value, the first comparison chip 7010 outputs a low level to the first analog switch 7013, and when the first signal input terminal is in a low level state, the first signal output terminal is connected to the second input terminal, and the second voltage value is passed as the first input voltage value to the second signal comparison circuit module 702; when the first voltage value is less than the second voltage value, the first comparison chip 7010 outputs a high level to the first analog switch 7013, and when the first signal input terminal is in a high level state, the first signal output terminal is connected to the first input terminal, and the first voltage value is passed as the first input voltage value to the second signal comparison circuit module 702.

[0053] For further information, see Figure 3 The first voltage divider circuit 7011 includes a seventh resistor 7 and an eighth resistor 8, one end of the seventh resistor 7, one end of the eighth resistor 8 and the negative input end of the first comparison chip 7010 are interconnected, the other end of the seventh resistor 7 is connected to the first temperature sensor 301, and the other end of the eighth resistor 8 is connected to the reference voltage generator.

[0054] For further information, see Figure 3 The second voltage divider circuit 7012 includes a ninth resistor 9 and a tenth resistor 10, one end of the ninth resistor 9, one end of the tenth resistor 10 and the positive input end of the first comparison chip 7010 are interconnected, the other end of the ninth resistor 9 is connected to the second temperature sensor 302, and the other end of the tenth resistor 10 is connected to the reference voltage generator.

[0055] For further information, see Figure 3The second signal comparison circuit module 702 includes a second comparison chip 7020 and a first adjustment circuit 7021. The second comparison chip 7020 is grounded and connected to the reference voltage generator. The positive input terminal of the second comparison chip 7020 is connected to the first adjustment circuit 7021, the negative input terminal of the second comparison chip 7020 is connected to the first signal output terminal, and the output terminal of the second comparison chip 7020 is connected to the second signal output circuit module 703. The second comparison chip 7020 compares the first input voltage value with the preset over-temperature voltage value output by the first adjustment circuit 7021, and outputs the comparison result to the second signal output circuit module 703. When the first input voltage value is greater than or equal to the preset over-temperature voltage value, the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, and when the first input voltage value is less than the preset over-temperature voltage value, the second comparison chip 7020 outputs a high level to the second signal output circuit module 703.

[0056] For further information, see Figure 3 The first adjustment circuit 7021 includes an eleventh resistor 11 and a twelfth resistor 12. The positive input terminal of the second comparison chip 7020 is interconnected with one end of the eleventh resistor 11 and one end of the twelfth resistor 12. The other end of the eleventh resistor 11 is grounded, and the other end of the twelfth resistor 12 is connected to the reference voltage generator. The first adjustment circuit 7021 adjusts the output voltage (voltage value at TP3) of the first adjustment circuit 7021 to a voltage value corresponding to over-temperature (i.e., a preset over-temperature voltage value) by adjusting the eleventh resistor 11 and the twelfth resistor 12.

[0057] For further information, see Figure 3 The second signal output circuit module 703 includes two second NOT gate chips 7030 connected in series. The second NOT gate chip 7030 is used to enhance and stabilize the level signal. When the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is an enhanced and stabilized low level, indicating that the signal is normal. When the second comparison chip 7020 outputs a high level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is an enhanced and stabilized high level, indicating that the signal is abnormal.

[0058] According to one embodiment of the present invention, see Figure 4The overcurrent protection unit includes an overcurrent protection circuit 80, a first Hall current sensor 303 arranged on the first IGBT component and a second Hall current sensor 304 arranged on the second IGBT component. The first Hall current sensor 303 and the second Hall current sensor 304 are respectively connected to the overcurrent protection circuit 80, and the overcurrent protection circuit 80 is connected to the comparator 40. The first Hall current sensor 303 is used to collect the current signal flowing through the first IGBT component in the IPM unit and automatically convert it into a third voltage value. The second Hall current sensor 304 is used to collect the current signal flowing through the second IGBT component in the IPM unit and automatically convert it into a fourth voltage value. The overcurrent protection circuit 80 outputs an overcurrent protection signal to the comparator 40 according to the third voltage value and the fourth voltage value.

[0059] For further information, see Figure 4 The overcurrent protection circuit 80 includes: a third signal input circuit module 801, a third signal comparison circuit module 802 and a third signal output circuit module 803 connected in sequence, the third signal input circuit module 801 includes a third comparison chip 8010, the negative input terminal of the third comparison chip 8010 is connected to the first Hall current sensor 303, the positive input terminal of the third comparison chip 8010 is connected to the second Hall current sensor 304, the output terminal of the third comparison chip 8010 is connected to the third signal comparison circuit module 802, the third comparison chip 8010 collects and compares the third voltage value and the fourth voltage value, takes the larger voltage value between the third voltage value and the fourth voltage value as the second input voltage value, and transmits it to the third signal comparison circuit module 802; the third signal comparison circuit module 802 compares the second input voltage value with the preset overcurrent voltage value, and the third signal output circuit module 803 outputs an overcurrent protection signal to the comparator 40 according to the comparison result of the third signal comparison circuit module 802.

[0060] In this embodiment, the first Hall current sensor 303 converts the current signal flowing through the first IGBT component in the IPM unit 30 into a third voltage value according to a certain ratio, and the second Hall current sensor 304 converts the current signal flowing through the second IGBT component in the IPM unit 30 into a fourth voltage value according to a certain ratio. The voltage value at TP4 is the third voltage value, and the voltage value at TP5 is the fourth voltage value. The voltage values ​​at TP4 and TP5 increase as the current increases, and the voltage value of TP4 is directly proportional to the current value, and the voltage value of TP5 is directly proportional to the current value.

[0061] For further information, see Figure 4The third signal input circuit module 801 further includes a second analog switch 8011 disposed at the output end of the third comparison chip 8010. The second analog switch 8011 includes a second signal input end (i.e., Vin end) connected to the output end of the third comparison chip 8010, a second signal output end (i.e., OUT end) connected to the third signal comparison circuit module 802, a third input end (i.e., NC end) connected to the negative input end of the third comparison chip 8010, and a fourth input end (i.e., NO end) connected to the positive input end of the third comparison chip 8010. The second analog switch 8011 further includes a ground end (i.e., GND end) and a power supply end (i.e., Vcc end) connected to a reference voltage generator.

[0062] In this embodiment, when the third voltage value is greater than the fourth voltage value, the third comparison chip 8010 outputs a low level to the second analog switch 8011, and when the second signal input terminal is in a low level state, the second signal output terminal is connected to the third input terminal, and the third voltage value is passed as the second input voltage value to the third signal comparison circuit module 802; when the third voltage value is less than the fourth voltage value, the third comparison chip 8010 outputs a high level to the second analog switch 8011, and when the second signal input terminal is in a high level state, the second signal output terminal is connected to the fourth input terminal, and the fourth voltage value is passed as the second input voltage value to the third signal comparison circuit module 802.

[0063] For further information, see Figure 4 The third signal comparison circuit module 802 includes a fourth comparison chip 8020 and a second adjustment circuit 8021. The fourth comparison chip 8020 is grounded and connected to the reference voltage generator. The negative input terminal of the fourth comparison chip 8020 is connected to the second adjustment circuit 8021. The positive input terminal of the fourth comparison chip 8020 is connected to the second signal output terminal. The output terminal of the fourth comparison chip 8020 is connected to the third signal output circuit module 803. The fourth comparison chip 8020 compares the second input voltage value with the preset overcurrent voltage value output by the second adjustment circuit 8021, and outputs the comparison result to the third signal output circuit module 803. When the second input voltage value is greater than or equal to the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803. When the second input voltage value is less than the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803.

[0064] For further information, see Figure 4The second adjustment circuit 8021 includes a thirteenth resistor 13 and a fourteenth resistor 14. The negative input terminal of the fourth comparison chip 8020 is interconnected with one end of the thirteenth resistor 13 and one end of the fourteenth resistor 14. The other end of the thirteenth resistor 13 is grounded, and the other end of the fourteenth resistor 14 is connected to the reference voltage generator. The second adjustment circuit 8021 adjusts the voltage value at TP6 to the voltage value corresponding to the overcurrent, that is, the preset overcurrent voltage value, by adjusting the thirteenth resistor 13 and the fourteenth resistor 14.

[0065] For further information, see Figure 4 The third signal comparison circuit module 802 further includes a fifteenth resistor 15, one end of the fifteenth resistor 15 is connected between the negative input end of the fourth comparison chip 8020 and the second adjustment circuit 8012, and the other end of the fifteenth resistor 15 is connected to the output end of the fourth comparison chip 8020. The fifteenth resistor 15 is used to amplify the comparison result output by the fourth comparison chip 8020.

[0066] For further information, see Figure 4 The third signal output circuit module 803 includes two third NOT gate chips 8030 connected in series. The third NOT gate chip 8030 is used to enhance and stabilize the level signal. When the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized low level, indicating that the signal is normal. When the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized high level, indicating that the signal is abnormal.

[0067] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An IPM protection system for a flywheel energy storage device, characterized in that: The IPM protection system includes: a signal generating unit, an IPM unit, a short circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver; The signal generating unit is used to generate and output a first pulse signal and a second pulse signal, and the IPM unit is provided with a first IGBT component and a second IGBT component; The input end of the short-circuit protection unit is connected to the IPM unit and the signal generating unit respectively, the output end of the short-circuit protection unit is connected to the comparator, and the short-circuit protection unit collects the gate voltage signal of the first IGBT component, the gate voltage signal of the second IGBT component, the first pulse signal and the second pulse signal, and outputs a short-circuit protection signal to the comparator; The input end of the over-temperature protection unit is connected to the IPM unit, the output end of the over-temperature protection unit is connected to the comparator, and the over-temperature protection unit collects the temperature of the first IGBT component and the temperature of the second IGBT component and outputs an over-temperature protection signal to the comparator; The input end of the overcurrent protection unit is connected to the IPM unit, the output end of the overcurrent protection unit is connected to the comparator, the overcurrent protection unit collects the current signal flowing through the first IGBT component in the IPM unit and the current signal flowing through the second IGBT component in the IPM unit and outputs an overcurrent protection signal to the comparator; The line driver is respectively connected to the comparator, the IPM unit, and the signal generating unit. When the short-circuit protection signal, the over-temperature protection signal, and the over-current protection signal are in a low-level state at the same time, the shutdown signal output by the comparator is in a low-level state, and the line driver controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit. Otherwise, the shutdown signal output by the comparator is in a high-level state, and the line driver controls the blocking of the first pulse signal and the second pulse signal from being transmitted to the IPM unit.

2. The IPM protection system according to claim 1, characterized in that: The line driver includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the comparator, the input pin is connected to the signal generating unit, and the output pin is connected to the IPM unit. When the shutdown signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM unit through the enable pin. When the shutdown signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM unit.

3. The IPM protection system according to claim 2, characterized in that: The short-circuit protection unit includes a short-circuit protection circuit, two first voltage sensors arranged on the first IGBT component and two second voltage sensors arranged on the second IGBT component, the first voltage sensor and the second voltage sensor are respectively connected to the short-circuit protection circuit, the gate voltage signal of the first IGBT component includes an upper gate voltage signal of the first IGBT component and a lower gate voltage signal of the first IGBT component, the gate voltage signal of the second IGBT component includes an upper gate voltage signal of the second IGBT component and a lower gate voltage signal of the second IGBT component, the two first voltage sensors are respectively used to collect the upper gate voltage signal of the first IGBT component and the lower gate voltage signal of the first IGBT component, and the two second voltage sensors are respectively used to collect the upper gate voltage signal of the second IGBT component and the lower gate voltage signal of the second IGBT component.

4. The IPM protection system according to claim 3, characterized in that: The short-circuit protection circuit comprises: a first signal input circuit module, a first signal comparison circuit module and a first signal output circuit module connected in sequence, wherein the first signal input circuit module is respectively connected to the first voltage sensor, the second voltage sensor and the signal generating unit, and the first signal output circuit module is connected to the comparator; the first signal comparison circuit module comprises a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, wherein the input end of the OR gate logic gate chip is respectively connected to the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, and the output end of the OR gate logic gate chip is connected to the first signal output circuit module. The blocks are connected, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate voltage signal of the first IGBT component and the lower gate voltage signal of the first IGBT component, the third AND gate logic gate chip outputs a third level signal according to the upper gate voltage signal of the second IGBT component and the lower gate voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.

5. The IPM protection system according to claim 2, characterized in that: The over-temperature protection unit includes an over-temperature protection circuit, a first temperature sensor provided on the first IGBT component, and a second temperature sensor provided on the second IGBT component. The first temperature sensor and the second temperature sensor are respectively connected to the over-temperature protection circuit, and the over-temperature protection circuit is connected to the comparator. The first temperature sensor is used to collect the temperature of the first IGBT component, and the second temperature sensor is used to collect the temperature of the second IGBT component. The over-temperature protection circuit outputs an over-temperature protection signal to the comparator according to the temperature of the first IGBT component and the temperature of the second IGBT component.

6. The IPM protection system according to claim 5, characterized in that: The over-temperature protection circuit includes: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, the second signal input circuit module includes a first comparison chip, a first voltage divider circuit and a second voltage divider circuit, one end of the first voltage divider circuit is connected to the first temperature sensor, the other end of the first voltage divider circuit is connected to the negative input end of the first comparison chip, one end of the second voltage divider circuit is connected to the second temperature sensor, the other end of the second voltage divider circuit is connected to the positive input end of the first comparison chip, the output end of the first comparison chip is connected to the second signal comparison circuit module, the first voltage divider circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the first input voltage value, and transmits it to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

7. The IPM protection system according to claim 6, characterized in that: The second signal input circuit module also includes a first analog switch arranged at the output end of the first comparison chip, the first analog switch includes a first signal input end connected to the output end of the first comparison chip, a first signal output end connected to the second signal comparison circuit module, a first input end connected between the negative input end of the first comparison chip and the first voltage divider circuit, and a second input end connected between the positive input end of the first comparison chip and the second voltage divider circuit.

8. The IPM protection system according to claim 7, characterized in that: The second signal comparison circuit module includes a second comparison chip and a first adjustment circuit, the positive input terminal of the second comparison chip is connected to the first adjustment circuit, the negative input terminal of the second comparison chip is connected to the first signal output terminal, and the output terminal of the second comparison chip is connected to the second signal output circuit module. The second comparison chip compares the first input voltage value with the preset over-temperature voltage value output by the first adjustment circuit, and outputs the comparison result to the second signal output circuit module.

9. The IPM protection system according to claim 2, characterized in that: The overcurrent protection unit includes an overcurrent protection circuit, a first Hall current sensor arranged on the first IGBT component, and a second Hall current sensor arranged on the second IGBT component. The first Hall current sensor and the second Hall current sensor are respectively connected to the overcurrent protection circuit, and the overcurrent protection circuit is connected to the comparator. The first Hall current sensor is used to collect the current signal flowing through the first IGBT component in the IPM unit and automatically convert it into a third voltage value. The second Hall current sensor is used to collect the current signal flowing through the second IGBT component in the IPM unit and automatically convert it into a fourth voltage value. The overcurrent protection circuit outputs an overcurrent protection signal to the comparator according to the third voltage value and the fourth voltage value.

10. The IPM protection system according to claim 9, characterized in that: The overcurrent protection circuit includes: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module connected in sequence, the third signal input circuit module includes a third comparison chip, the negative input end of the third comparison chip is connected to the first Hall current sensor, the positive input end of the third comparison chip is connected to the second Hall current sensor, the output end of the third comparison chip is connected to the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, takes the larger voltage value between the third voltage value and the fourth voltage value as the second input voltage value, and transmits it to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

11. The IPM protection system according to claim 10, characterized in that: The third signal input circuit module also includes a second analog switch arranged at the output end of the third comparison chip, the second analog switch includes a second signal input end connected to the output end of the third comparison chip, a second signal output end connected to the third signal comparison circuit module, a third input end connected to the negative input end of the third comparison chip, and a fourth input end connected to the positive input end of the third comparison chip.

12. The IPM protection system according to claim 11, characterized in that: The third signal comparison circuit module includes a fourth comparison chip and a second adjustment circuit. The negative input terminal of the fourth comparison chip is connected to the second adjustment circuit, the positive input terminal of the fourth comparison chip is connected to the second signal output terminal, and the output terminal of the fourth comparison chip is connected to the third signal output circuit module. The fourth comparison chip compares the second input voltage value with the preset overcurrent voltage value output by the second adjustment circuit, and outputs the comparison result to the third signal output circuit module.

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