power amplifier

Abstract

The present invention relates to a power amplifier circuit. The power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and generate a first current. The current mirror is connected to the voltage-controlled current source and generates a second current in response to the first current. As the first voltage continuously changes from 0V to approximately 1V, the second current continuously changes from 0mA to approximately 120mA.

Description

Technical Field

[0001] The present disclosure relates to a power amplifier, and more particularly, to a bias circuit for a power amplifier. Background Art

[0002] A power amplifier is a circuit in a wireless transceiver that amplifies the signal being transmitted. The power amplifier can be powered by a power supply circuit, such as a current source (or current sink) connected to a current mirror. As the transmission distance changes, the power applied to the power amplifier should also change. Therefore, it is necessary to provide a power amplifier that can operate in a low-power mode for short-range transmissions and a high-power mode for long-range transmissions. Summary of the Invention

[0003] According to one aspect of the present disclosure, a power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and generate a first current. The current mirror is connected to the voltage-controlled current source and generates a second current in response to the first current. As the first voltage continuously changes from 0V to approximately 1V, the second current continuously changes from 0mA to approximately 120mA.

[0004] According to another aspect of the present disclosure, a power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and generate a first current. The voltage-controlled current source includes a current generating device configured to generate a second current proportional to the square of the first voltage. The first current is proportional to the square of the first voltage. The current mirror is connected to the voltage-controlled current source and configured to generate a third current in response to the first current.

[0005] According to another aspect of the present disclosure, a power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and generate a first current in response to the first voltage. The current mirror is connected to the voltage-controlled current source and generates a second current. The second current increases exponentially as the first voltage increases. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0007] Figure 1B 、 Figure 1C 、 Figure 1D and Figure 1E Describe some embodiments of the present disclosure Figure 1A Simulation results of the power amplifier are shown in Figure 4.

[0008] Figure 2Ais a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0009] Figure 2B 、 Figure 2C 、 Figure 2D and Figure 2E Describe some embodiments of the present disclosure Figure 2A Simulation results of the power amplifier are shown in Figure 4.

[0010] Figure 3A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0011] Figure 3B and Figure 3C Describe some embodiments of the present disclosure Figure 3A Simulation results of the power amplifier are shown in Figure 4.

[0012] Figure 4A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0013] Figure 4B 、 Figure 4C 、 Figure 4D and Figure 4E Describe some embodiments of the present disclosure Figure 4A Simulation results of the power amplifier are shown in Figure 4.

[0014] Figure 5A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0015] Figure 5B 、 Figure 5C 、 Figure 5D and Figure 5E Describe some embodiments of the present disclosure Figure 5A Simulation results of the power amplifier are shown in Figure 4.

[0016] Figure 6A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0017] Figure 6B 、 Figure 6C 、 Figure 6D and Figure 6E Describe some embodiments of the present disclosure Figure 6A Simulation results of the power amplifier are shown in Figure 4.

[0018] Figure 7A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0019] Figure 7B Describe some embodiments of the present disclosure Figure 7A Simulation results of the power amplifier are shown in Figure 4.

[0020] Figure 8A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0021] Figure 8B Describe some embodiments of the present disclosure Figure 8A Simulation results of the power amplifier are shown in Figure 4.

[0022] Figure 9A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0023] Figure 9B Describe some embodiments of the present disclosure Figure 9A Simulation results of the power amplifier are shown in Figure 4.

[0024] Figure 10A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0025] Figure 10B Describe some embodiments of the present disclosure Figure 10A Simulation results of the power amplifier are shown in Figure 4.

[0026] Figure 11A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0027] Figure 11B Describe some embodiments of the present disclosure Figure 11A Simulation results of the power amplifier are shown in Figure 4.

[0028] Figure 12A is a schematic diagram illustrating a power amplifier according to some embodiments of the present disclosure.

[0029] Figure 12B Describe some embodiments of the present disclosure Figure 12A Simulation results of the power amplifier are shown in Figure 4.

[0030] Common reference numerals are used throughout the drawings and detailed description to refer to the same or similar components.The present disclosure can be readily understood from the following detailed description taken in conjunction with the accompanying drawings. DETAILED DESCRIPTION

[0031] Although described with particular reference to portable transceivers, the circuits and methods for biasing gallium arsenide (GaAs) power amplifiers (also referred to as GaAs bias circuits) can be implemented in any GaAs device requiring bias current and voltage. Furthermore, the circuits described below can be fabricated using an integrated bipolar field effect transistor (BIFET) process that takes advantage of the lower turn-on voltage of field effect transistors. Furthermore, in certain embodiments, the transistors described below include bipolar junction transistors (referred to as BJTs) fabricated using a process known as a BIFET process or a BiHEMT process, including heterojunction bipolar junction transistors (referred to as HBTs) and field effect transistors (referred to as FETs) or phantom high electron mobility transistors (referred to as pHEMTs).

[0032] As used herein, reference to the gate, source, drain, or other component of a transistor or other circuit component being connected to the gate, source, drain, or other component of another transistor or other circuit component may refer to a direct connection, or to a connection with another circuit component (e.g., a transistor) disposed therebetween.

[0033] Figure 1A FIG2 is a schematic diagram illustrating a power amplifier 100 according to some embodiments of the present disclosure. The power amplifier 100 includes a voltage-controlled current source 110 and a current mirror circuit 120 .

[0034] The voltage-controlled current source 110 includes an amplifier A111 and resistors R111, R112, R113, R114, and R115. Amplifier A111 includes a first input terminal (e.g., a positive terminal "+"), a second input terminal (e.g., a negative terminal "-"), and an output terminal. The first input terminal of amplifier A111 is connected to one terminal of resistor R111, and the other terminal of resistor R111 is connected to a voltage source to receive voltage V111. Resistor R112 is connected between the first input terminal of amplifier A111 and current mirror circuit 120. Resistor R113 is connected between the second input terminal of amplifier A111 and ground. Resistor R114 is connected between the second input terminal of amplifier A111 and the output terminal of amplifier A111. Resistor R115 is connected between the output terminal of amplifier A111 and current mirror circuit 120.

[0035] Current mirror circuit 120 comprises transistors T121, T122 and T123, and resistors R121, R122 and R123.In certain embodiments, transistors T121, T122 and T123 are bipolar junction transistors (BJT) or any other suitable transistors.Transistor T121 has the collector connected to resistors R112 and R115, the base connected to resistors R121 and R123 and the emitter connected to ground.Transistor T122 has the collector connected to voltage source to receive voltage V122, the base connected to resistors R122 and R123 and the emitter connected to ground.Transistor T123 has the collector connected to voltage source to receive voltage V121, the base connected to the output of amplifier A111 and resistors R114 and R115 and the emitter connected to resistors R121 and R122.

[0036] In some embodiments, the voltage-controlled current source 110 is configured to receive a voltage V111 and generate a current I111 in response to the voltage V111. The current mirror circuit 120 is connected to the voltage-controlled current source 110 and is configured to generate a current I121 in response to the current I111. The current I121 is proportional to the voltage V111. In some embodiments, as described Figure 1A The simulation results of the power amplifier 100 are Figure 1B As shown in FIG, as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 50mA. Therefore, the voltage V111 can also be referred to as an input control voltage. Compared with existing power amplifiers, the power amplifier 100 provides a relatively wide range (or resolution) of the current I121, which improves the performance of the power amplifier 100 for both short-range transmission and long-range transmission. In addition, the existing power amplifier requires a reference voltage to generate a bias current. However, the reference voltage requires an additional bias circuit, which will increase the area and design complexity of the power amplifier. According to Figure 1A In the embodiment shown in FIG, no reference voltage bias circuit is required, which can reduce the area and design complexity of the power amplifier 100.

[0037] Figure 1C 、 Figure 1D and Figure 1E Describe some embodiments of the present disclosure Figure 1A The simulation results of the power amplifier 100 are shown in FIG. Figure 1C As shown in FIG, the current I121 generally remains at a fixed value, which shows that the current I121 will not be affected by the change of the voltage V121 when the voltage V121 (for example, which can be provided by a battery of the electronic device including the power amplifier 100) changes continuously from about 3.2V to about 4.2V. Figure 1DAs shown in FIG. 1 , as the temperature of the power amplifier 100 changes from about −20° C. to about 120° C., the current I121 changes between about 49.4 mA and about 49.7 mA. This means Figure 1A The power amplifier 100 in FIG. 1 has a temperature compensation function. In other words, temperature has little effect on the current I121. In some embodiments, temperature compensation can be achieved by resistors R121 and R122. Figure 1E , as the voltage V122 continuously changes from 0.5 V to about 4.2 V, the current I121 continuously changes from 35 mA to about 55 mA. In some embodiments, the voltage V122 can be provided by envelope tracking power (ETP) or average power tracking (APT).

[0038] Figure 2A is a schematic diagram illustrating a power amplifier 200 according to some embodiments of the present disclosure. The power amplifier 200 is similar to Figure 1A The power amplifier 100 in FIG. 1 is shown in FIG. 1 , except that, in the current-controlled voltage source 210 of the power amplifier 200 , resistors R114 and R115 are connected to the voltage source to receive the voltage V121 . Figure 1A Only the DC bias circuit is described. Figure 2A In FIG. 1 , both the DC bias circuit and the high frequency components (e.g., inductors L21 and L22, and capacitors C21, C22, and C23) are described. These high frequency components may be applicable to Figure 1A The power amplifier 100 in FIG.

[0039] The base of transistor T122 is connected to the radio frequency (RF) input terminal Vin of power amplifier 200 via capacitor C23 to receive an RF signal. The collector of transistor T122 is connected to inductor L21 and inductor L22. Capacitor C21 is connected between inductor L22 and ground. Capacitor C22 is connected between inductor L22 and RF output terminal Vout to output an amplified signal corresponding to the RF signal. In some embodiments, inductors L21 and L22 can be considered as short circuits, and capacitors C21, C22, and C23 can be considered as open circuits at low frequencies (e.g., DC).

[0040] Figure 2B 、 Figure 2C 、 Figure 2D and Figure 2E Describe some embodiments of the present disclosure Figure 2A The electrical characteristics and advantages of the power amplifier 200 are similar to those of the power amplifier 200. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 2BAs shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 48mA. Figure 2C As shown in FIG. 1 , as the voltage V122 continuously changes from 0.5V to about 4.2V, the current I121 continuously changes from 34mA to about 53mA. Figure 2D As shown in FIG. 2 , as the temperature of the power amplifier 200 changes from about −20° C. to about 120° C., the current I121 changes between about 48.2 mA and about 48.6 mA. Figure 2E As shown in FIG. , as the voltage V121 continuously changes from 3.2 V to about 4.2 V, the current I121 continuously changes from 47.4 mA to about 48.7 mA.

[0041] Figure 3A is a schematic diagram illustrating a power amplifier 300 according to some embodiments of the present disclosure. The power amplifier 300 is similar to Figure 2A , except that the voltage-controlled current source 310 of the power amplifier 300 is different from the voltage-controlled current source 210 of the power amplifier 200 .

[0042] Voltage-controlled current source 310 includes transistors T311 and T312, and resistors R311, R312, R313, R314, R315, R316, and R317. The base of transistor T311 is connected to ground via resistor R311 and to a voltage source via resistor R312 to receive voltage V121. The emitter of transistor T311 is connected to ground via transistor R314, and the collector of transistor T311 is connected to the base of transistor T123 and to the voltage source via resistor R313 to receive voltage V121. The base of transistor T312 is connected to the collector of transistor T121 via resistor R316 and to the voltage source via resistor R315 to receive voltage V111. The emitter of transistor T312 is connected to ground via transistor R314, and the collector of transistor T312 is connected to the voltage source to receive voltage V121. The resistor R317 is connected between the collector of the transistor T121 and the voltage source to receive the voltage V121 .

[0043] Figure 3B and 3C Describe some embodiments of the present disclosure Figure 3A The electrical characteristics and advantages of the power amplifier 300 are similar to those of the power amplifier 300. Figure 2A The electrical characteristics and advantages of the power amplifier 200 in FIG. Figure 3B As shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 22mA. Figure 3CAs shown in FIG. 3 , as the temperature of the power amplifier 300 changes from approximately −20° C. to approximately 120° C., the current I 121 changes between approximately 20.8 mA and approximately 21.9 mA.

[0044] Figure 4A is a schematic diagram illustrating a power amplifier 400 according to some embodiments of the present disclosure. The power amplifier 400 is similar to Figure 1A 100, except that the voltage-controlled current source 410 of the power amplifier 400 further includes a transistor T411. In some embodiments, the transistor T411 is a phantom high electron mobility transistor (pHEMT). The gate of the transistor T411 is connected to the output of the amplifier A111, the source of the transistor T411 is connected to the resistors R114 and R115 and the base of the transistor T123, and the drain of the transistor T411 is connected to a voltage source to receive a voltage V121. In some embodiments, the transistor T411 can be used to reduce the voltage and current I121 at the output of the amplifier A111, thereby reducing the power consumption of the power amplifier 400.

[0045] Figure 4B 、 4C , 4D and 4E illustrate some embodiments of the present disclosure. Figure 4A The electrical characteristics and advantages of the power amplifier 400 are similar to those of the power amplifier 400. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 4B As shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 45mA. Figure 4C As shown in FIG. 1 , as the voltage V121 continuously changes from 3.2V to about 4.1V, the current I121 remains at 49.5mA. Figure 4D As shown in FIG. 4 , as the temperature of the power amplifier 400 changes from about −20° C. to about 120° C., the current I121 changes between about 49.4 mA and about 49.7 mA. Figure 4E As shown in FIG. , as the voltage V122 continuously changes from 0.5 V to about 4.2 V, the current I121 continuously changes from 35 mA to about 55 mA.

[0046] Figure 5A is a schematic diagram illustrating a power amplifier 500 according to some embodiments of the present disclosure. The power amplifier 500 is similar to Figure 1AThe power amplifier 100 of FIG. 1 is similar to the power amplifier 100 of FIG. 1 , and one of the differences therebetween is that the voltage-controlled current source 510 of the power amplifier 500 further includes transistors T511 and T512. In some embodiments, transistors T511 and T512 are depletion-mode pHEMTs (D-pHEMTs). The gates of transistor T511 and transistor T512 are connected to the base of transistor T121. The drains of transistor T511 and transistor T512 are connected to the output of amplifier A111. Resistor R114 is connected to the source of transistor T511. Resistor R112 is connected to the source of transistor T512. Because the drains of transistors T511 and T512 are connected to the same voltage and the gates of transistors T511 and T512 are connected to the same voltage, the voltage difference between the source of transistor T511 and the source of transistor T512 is proportional to voltage V111. In some embodiments, if the resistors R111, R112, R113, and R114 are relatively large, the transistor T511 can compensate for the offset of the threshold voltages of the transistors T511 and T512. In some embodiments, the transistor T512 can generate a current proportional to the square of the voltage V111. Figure 5B , current I121 also changes in proportion to the square of voltage V111. Thus, transistors T511 and T512 can act as squaring devices to increase the current range (or resolution) of current I121.

[0047] Figure 5B 、 5C 5D and 5E illustrate some embodiments of the present disclosure. Figure 5A The electrical characteristics and advantages of the power amplifier 500 are similar to those of the power amplifier 500. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 5B As shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 70mA. Figure 5C As shown in FIG. 1 , as the voltage V121 continuously changes from 3.2V to about 4.2V, the current I121 remains at 57mA. Figure 5D As shown in FIG. 5 , as the temperature of the power amplifier 500 changes from about −20° C. to about 120° C., the current I121 changes between about 56.8 mA and about 57.6 mA. Figure 5E As shown in FIG. , as the voltage V122 continuously changes from 0.5 V to about 4.2 V, the current I121 continuously changes from 42 mA to about 64 mA.

[0048] Figure 6A is a schematic diagram illustrating a power amplifier 600 according to some embodiments of the present disclosure. The power amplifier 600 is similar to Figure 1AThe power amplifier 100 of FIG. 1 is similar to the power amplifier 100 of FIG. 1 , and one of the differences therebetween is that the voltage-controlled current source 610 of the power amplifier 600 further includes transistors T611 and T612. In some embodiments, transistors T611 and T612 are D-pHEMTs. The gate of transistor T611 and the gate of transistor T612 are connected to the output terminal of amplifier A111. The drain of transistor T611 and the drain of transistor T612 are connected to a voltage source to receive voltage V121. The source of transistor T611 is connected to resistor R114 and the base of transistor T123. The source of transistor T612 is connected to resistor R112 and the collector of transistor T111. Transistors T611 and T612 can act as buffers to reduce the current and voltage at the output terminal of amplifier A111.

[0049] Figure 6B 、 6C , 6D and 6E illustrate some embodiments of the present disclosure. Figure 6A The electrical characteristics and advantages of the power amplifier 600 are similar to those of the power amplifier 600. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 6B As shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 62mA. Figure 6B As shown in FIG, current I121 changes in proportion to the square of voltage V111. Therefore, transistors T611 and T612 can act as square devices to increase the current range (or resolution) of current I121. Figure 6C As shown in FIG. 1 , as the voltage V121 continuously changes from 3.2V to about 4.2V, the current I121 changes between about 62.5mA and about 64mA. Figure 6D As shown in FIG. 6 , as the temperature of the power amplifier 600 changes from about −20° C. to about 120° C., the current I121 changes between about 63 mA and about 64.3 mA. Figure 6E As shown in FIG, as the voltage V122 continuously changes from 0.5V to approximately 4.2V, the current I121 continuously changes from 45mA to approximately 68mA. In other embodiments, transistors T511 and T512 are replaced by enhancement-mode pHEMTs (E-pHEMTs) to increase the current I121. For example, as the voltage V111 continuously changes from 0V to approximately 1V, the current I121 can continuously change from 0mA to approximately 160mA.

[0050] Figure 7A is a schematic diagram illustrating a power amplifier 700 according to some embodiments of the present disclosure. The power amplifier 700 is similar to Figure 1AThe power amplifier 100 of FIG. 1 is similar to the power amplifier 100 of FIG. 1 , and one of the differences therebetween is that the voltage-controlled current source 710 of the power amplifier 700 further includes transistors T711 and T712, and resistors R711 and R712. In some embodiments, transistors T711 and T712 are diodes or diode-connected transistors (e.g., heterojunction bipolar junction transistors (HBTs)). The base of transistor T711 and the base of transistor T712 are connected to the output of amplifier A111 and the base of transistor T123. The collector of transistor T711 and the collector of transistor T712 are disconnected. The emitter of transistor T711 is connected to resistor R114. The emitter of transistor T712 is connected to resistor R112 and the collector of transistor T111. Resistor R711 is connected between a voltage source providing voltage V111 and resistor R111. Resistor R712 is connected between resistor R711 and ground.

[0051] Figure 7B Description of some embodiments according to the present disclosure Figure 7A The electrical characteristics and advantages of the power amplifier 700 are similar to those of the power amplifier 700. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 7B As shown in FIG. 1 , as the voltage V111 continuously changes from 0V to about 1V, the current I121 continuously changes from 0mA to about 120mA. Figure 7B As shown in FIG, as voltage V111 increases, current I121 increases exponentially. Therefore, transistors T611 and T612 can act as exponential devices to increase the current range (or resolution) of current I121.

[0052] Figure 8A is a schematic diagram illustrating a power amplifier 800 according to some embodiments of the present disclosure. The power amplifier 800 is similar to Figure 1A 1. The power amplifier 100 of FIG. 1 is similar to the power amplifier 100 of FIG. 1. One of the differences therebetween is that the voltage-controlled current source 810 of the power amplifier 800 further includes transistors T811 and T812. In some embodiments, transistors T811 and T812 are D-pHEMTs. The gate of transistor T811 and the gate of transistor T812 are connected to the base of transistor T111. The drain of transistor T811 and the drain of transistor T812 are connected to a voltage source to receive voltage V121. The source of transistor T811 is connected to resistor R114. The source of transistor T812 is connected to resistor R112 and the collector of transistor T111. The arrangement of transistors T811 and T812 can further reduce the current at the output of amplifier 111.

[0053] Figure 8B Description of some embodiments according to the present disclosure Figure 8A The electrical characteristics and advantages of the power amplifier 800 are similar to those of the power amplifier 800. Figure 1A The electrical characteristics and advantages of the power amplifier 100 in FIG. Figure 8B As shown in FIG. , as the voltage V111 continuously changes from 0 V to about 1 V, the current I121 continuously changes from 0 mA to about 65 mA.

[0054] Figure 9A is a schematic diagram illustrating a power amplifier 900 according to some embodiments of the present disclosure. The power amplifier 900 is similar to Figure 8A 800 in FIG. 1 , and one of the differences therebetween is that the voltage-controlled current source 910 of the power amplifier 900 further includes a transistor T911. In some embodiments, the transistor T911 is a D-pHEMT. The gate of the transistor T911 is connected to the output of the amplifier A111. The drain of the transistor T911 is connected to a voltage source to receive a voltage V121. The source of the transistor T911 is connected to the drain of the transistor T811 and the drain of the transistor T812. The transistor T911 can act as a buffer to reduce the current and voltage at the output of the amplifier A111.

[0055] Figure 9B Describe some embodiments of the present disclosure Figure 9A The electrical characteristics and advantages of the power amplifier 900 are similar to those of the power amplifier 900. Figure 8A The electrical characteristics and advantages of the power amplifier 800 in FIG. Figure 9B As shown in FIG. , as the voltage V111 continuously changes from 0 V to about 1 V, the current I121 continuously changes from 0 mA to about 68 mA.

[0056] Figure 10A is a schematic diagram illustrating a power amplifier 1000 according to some embodiments of the present disclosure. The power amplifier 1000 is similar to Figure 9A 1 and 10. One of the differences between the power amplifier 900 and the power amplifier 1000 is that the connection relationship between the transistors T811, T812, and T911 of the voltage-controlled current source 1010 of the power amplifier 1000 is different from the connection relationship between the transistors of the voltage-controlled current source 910. For example, in the voltage-controlled current source 910, the source of the transistor T911 is connected to the drains of the transistors T811 and T812, while in the voltage-controlled current source 1010, the source of the transistor T911 is connected to the base of the transistor T123.

[0057] Figure 10B Description of some embodiments according to the present disclosure Figure 10AThe electrical characteristics and advantages of the power amplifier 1000 are similar to those of the power amplifier 1000. Figure 9A The electrical characteristics and advantages of the power amplifier 900 in FIG. Figure 10B As shown in FIG. , as the voltage V111 continuously changes from 0 V to about 1 V, the current I121 continuously changes from 0 mA to about 65 mA.

[0058] Figure 11A is a schematic diagram illustrating a power amplifier 1100 according to some embodiments of the present disclosure. The power amplifier 1100 is similar to Figure 8A The power amplifier 800 in FIG. 1 is different from the power amplifier 800 in FIG. 1 , and one of the differences therebetween is that the connection relationship between the transistors T811 and T812 of the voltage-controlled current source 1110 of the power amplifier 1100 is different from the connection relationship between the transistors of the voltage-controlled current source 810. Figure 11A In the embodiment, transistors T811 and T812 may be E-pHEMTs. The gates of transistors T811 and T812 are connected to the output of amplifier A111 and the base of transistor T123. The drains of transistors T811 and T812 are connected to a voltage source to receive voltage V121. The source of transistor T811 is connected to resistor R114. The source of transistor T812 is connected to resistor R112 and the collector of transistor T111.

[0059] Figure 11B Description of some embodiments according to the present disclosure Figure 11A The electrical characteristics and advantages of the power amplifier 1100 are similar to those of the power amplifier 1100. Figure 8A The electrical characteristics and advantages of the power amplifier 800 in FIG. Figure 11B As shown in FIG. , as the voltage V111 continuously changes from 0 V to about 0.6 V, the current I121 continuously changes from 0 mA to about 65 mA.

[0060] Figure 12A is a schematic diagram illustrating a power amplifier 1200 according to some embodiments of the present disclosure. The power amplifier 1200 is similar to Figure 10A The power amplifier 1000 in FIG. 1 is different from the power amplifier 1000 in FIG. 1 , and one of the differences therebetween is that the connection relationship between the transistors T811, T812, and T911 of the voltage-controlled current source 1210 of the power amplifier 1200 is different from the connection relationship between the transistors of the voltage-controlled current source 1010. Figure 12AIn the embodiment, transistors T811, T812, and T911 may be E-pHEMTs. The gates of transistors T811 and T812 are connected to the source of transistor T911 and the base of transistor T123. The drains of transistors T811 and T812 are connected to a voltage source to receive voltage V121. The source of transistor T811 is connected to resistor R114. The source of transistor T812 is connected to resistor R112 and the collector of transistor T111.

[0061] Figure 12B Description of some embodiments according to the present disclosure Figure 12A The electrical characteristics and advantages of the power amplifier 1200 are similar to those of the power amplifier 1200. Figure 10A The electrical characteristics and advantages of the power amplifier 1000 in FIG. Figure 12B As shown in FIG. , as the voltage V111 continuously changes from 0 V to about 0.7 V, the current I121 continuously changes from 0 mA to about 90 mA.

[0062] As used herein, the singular terms "a," "an," and "the" may include plural referents unless the context clearly dictates otherwise.

[0063] In addition, amounts, ratios and other numerical values are sometimes presented herein in a range format. It should be understood that such range format is used for convenience and brevity and should be interpreted flexibly to include not only the values explicitly specified as the limits of the range, but also all individual values or sub-ranges encompassed within that range, as if each value and sub-range were explicitly specified.

[0064] As used herein and not otherwise defined, the terms "substantially," "essentially," "approximately," and "about" are intended to describe and take into account minor variations. When used in conjunction with an event or circumstance, the terms can encompass situations where the event or circumstance occurs exactly as well as situations where the event or circumstance closely approximates to occurring. For example, when used in conjunction with a numerical value, the terms can encompass a range of variation of less than or equal to ±10% of that numerical value, e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values may be considered “substantially” or “approximately” the same or equal if the difference between them is less than or equal to ±10% of the mean of the values (e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%).

[0065] Although the present disclosure has been described and illustrated with reference to specific embodiments of the present disclosure, these descriptions and illustrations do not limit the present disclosure. It will be clearly understood by those skilled in the art that various changes may be made and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to variations in manufacturing processes, etc., there may be differences between the artistic reproductions in the present disclosure and the actual devices. There may be other embodiments of the present disclosure that are not specifically described. The description and drawings should be regarded as illustrative, not restrictive. Modifications may be made to adapt specific circumstances, materials, compositions of matter, methods or processes to the objectives, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it will be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of operations are not limitations of the present disclosure.

Claims

1. A power amplifier circuit, comprising: a voltage-controlled current source configured to receive a first voltage and generate a first current; as well as a current mirror connected to the voltage-controlled current source and configured to generate a second current in response to the first current; current, wherein the voltage-controlled current source further comprises a current generating device configured to generate a third current proportional to the square of the first voltage, The first current is proportional to the square of the first voltage, The current generating device includes an amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, a first field effect transistor (FET), a second FET, and a third FET, the first FET including a drain connected to the drain of the second FET, a gate connected to the gate of the second FET, and a source configured to provide the third current, the first resistor being connected to the first voltage and a positive input of the amplifier, the second resistor being connected to the positive input of the amplifier, the third resistor being connected to a negative input of the amplifier and ground, and the fourth resistor being connected to the negative input of the amplifier and a source of the second FET, The gate of the second FET is connected to the source of the third FET, the drain of the second FET is connected to a second voltage, the drain of the first FET, and the drain of the third FET, the gate of the third FET is connected to the output terminal of the amplifier, and the gate of the first FET is connected to the source of the third FET, and The current mirror includes a first transistor and a second transistor, the base of the first transistor is connected to the source of the third FET, the emitter of the first transistor is connected to the base of the second transistor, the collector of the first transistor is connected to the second voltage, the collector of the second transistor is connected to the source of the first FET and the second resistor, and the emitter of the second transistor is grounded.

2. A power amplifier circuit comprising: a voltage-controlled current source configured to receive a first voltage and generate a first current; as well as a current mirror connected to the voltage-controlled current source and configured to generate a second current in response to the first current; current, wherein as the first voltage changes from 0V to about 1V, the second current changes from 0mA to about 70mA, wherein the voltage-controlled current source further comprises a current generating device configured to generate a third current proportional to the square of the first voltage, The first current is proportional to the square of the first voltage, The current generating device includes an amplifier (A111), a first resistor (R111), a second resistor (R112), a third resistor (R113), a fourth resistor (R114), a first field effect transistor (FET) and a second FET, the first FET including a drain connected to the drain of the second FET, a gate connected to the gate of the second FET, and a source configured to provide the third current, The first resistor is connected to the first voltage (V111) and the positive input terminal of the amplifier, the second resistor is connected to the positive input terminal of the amplifier, the third resistor is connected to the negative input terminal of the amplifier and ground, the fourth resistor is connected to the negative input terminal of the amplifier and the source of the second FET (T511), and the drain of the second FET is connected to the output terminal of the amplifier, and the current mirror includes a first transistor (T123) and a second transistor (T121), the drain of the first FET, the drain of the second FET, and the emitter of the first transistor are connected to the base of the second transistor, the collector of the second transistor is connected to the source of the first FET and the second resistor, the emitter of the second transistor is connected to ground, and the base of the second transistor is connected to the gate of the first FET.

3. A power amplifier circuit comprising: a voltage-controlled current source configured to receive a first voltage and generate a first current; as well as a current mirror connected to the voltage-controlled current source and configured to generate a second current in response to the first current; current, wherein as the first voltage changes from 0V to about 1V, the second current changes from 0mA to about 70mA, wherein the voltage-controlled current source further comprises a current generating device configured to generate a third current proportional to the square of the first voltage, The first current is proportional to the square of the first voltage, The current generating device includes an amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, a first field effect transistor (FET), a second FET, and a third FET, The first resistor is connected to the first voltage and a positive input terminal of the amplifier, the second resistor is connected to the positive input terminal of the amplifier, the third resistor is connected to a negative input terminal of the amplifier and ground, the fourth resistor is connected to the negative input terminal of the amplifier and a source of the second FET, and the drain of the second FET is connected to the source of the third FET, and The current mirror includes a first transistor and a second transistor, the base of the first transistor is connected to the drain of the first FET and the drain of the second FET, the emitter of the first transistor is connected to the base of the second transistor, the collector of the first transistor is connected to a second voltage, the collector of the second transistor is connected to the source of the first FET and the second resistor, the emitter of the second transistor is grounded, and the base of the second transistor is connected to the gate of the first FET.

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