A multi-layer lining wall plasma processing device and working method thereof

Abstract

The technical solution of the present invention discloses a multi-layer lining wall plasma processing device and a working method thereof, comprising a vacuum chamber wall, a multi-layer lining wall installed on the inner side wall of the vacuum chamber wall, a stage fixed in a chamber in the vacuum chamber wall, and an isolation plate connected to the stage and horizontally isolating the chamber into an equal-dimensional generating chamber and a vacuum chamber, wherein an air inlet and an air exhaust port are respectively arranged at the top and bottom of the vacuum chamber wall, and a lifting mechanism for replacing the multi-layer lining wall is installed at the bottom of the vacuum chamber wall, and the lifting mechanism is connected to a background controller. The present invention greatly improves the equipment utilization rate of the plasma processing device by arranging a replaceable multi-layer lining wall in the vacuum chamber wall and realizing the replacement of the multi-layer lining wall without breaking the vacuum state through the lifting mechanism.

Description

Technical Field

[0001] The present invention relates to the technical field of vacuum plasma processing devices, and in particular to a multi-layer liner wall plasma processing device and a working method thereof. Background Art

[0002] Vacuum plasma processing devices are currently widely used in semiconductor chip processing, such as plasma etching, ashing, and plasma enhanced meteoric chemical precipitation.

[0003] The lining wall in a plasma processing chamber is a common structure, such as Figure 1 As shown, it includes a vacuum chamber wall 1, an inner lining wall 2, a stage 4, an isolation plate 3, an air inlet 5 and an exhaust port 6. Generally speaking, the inner lining wall has two functions: one is to protect the vacuum chamber wall from being corroded by plasma, and the other is to facilitate disassembly and cleaning.

[0004] In the semiconductor processing process, because the chemical properties of plasma are very active, long-term exposure to plasma will cause corrosion or chemical contamination, causing changes in the chemical environment and affecting the stability of the plasma processing results. Therefore, plasma processing equipment currently uses regular cleaning or replacement of the lining wall. Since the vacuum will be broken during the replacement process, the equipment condition will change, resulting in longer downtime and greatly reduced equipment operation time. How to improve the utilization rate of equipment is a very important issue in the semiconductor processing industry.

[0005] Therefore, the present application proposes a vacuum plasma device structure with a multi-layer lining wall, which can realize self-replacement of the lining wall that has been corroded or contaminated by plasma without breaking the vacuum, thereby greatly improving the equipment utilization rate of the plasma processing chamber. Summary of the invention

[0006] The technical problem solved by the present invention is that the existing plasma processing device is prone to breaking the vacuum when replacing the inner lining wall, resulting in long downtime, reducing the operating time of the equipment and reducing the working efficiency of the equipment.

[0007] In order to solve the above-mentioned technical problems, the technical solution of the present invention provides a multi-layer lining wall plasma processing device, which includes a vacuum chamber wall, a multi-layer lining wall installed on the inner wall of the vacuum chamber wall, a stage fixed in a chamber in the vacuum chamber wall, and an isolation plate connected to the stage and horizontally isolating the chamber into a three-dimensional generating chamber and a vacuum chamber, wherein an air inlet and an air exhaust port are respectively arranged at the top and bottom of the vacuum chamber wall, and a lifting mechanism for replacing the multi-layer lining wall is installed at the bottom of the vacuum chamber wall, and the lifting mechanism is connected to a background controller.

[0008] Optionally, the lifting mechanism includes a first lifting mechanism installed on the vacuum chamber wall for supporting the multi-layer lining wall and a second lifting mechanism installed at the bottom of the vacuum chamber wall for replacing the multi-layer lining wall.

[0009] Optionally, the first lifting mechanism is a telescopic pump, a telescopic pump shaft of the telescopic pump passes through the vacuum chamber wall and is located at the bottom of the multi-layer lining wall, and the telescopic pump shaft is in contact with the isolation plate.

[0010] Optionally, the second lifting mechanism is a cylinder, a tray is fixed to the end of the cylinder shaft of the cylinder, the initial state of the cylinder is an extended state, and the tray at the end of the cylinder shaft in the extended state is located below the telescopic pump shaft.

[0011] Optionally, the number of layers of the multi-layer lining wall is proportional to the thickness of the multi-layer lining wall, and the number of layers of the multi-layer lining wall is proportional to the distance from the point where the telescopic pump shaft passes through the vacuum chamber wall to the isolation plate.

[0012] Optionally, the thickness of the multi-layer lining wall is equal to or less than the distance between the isolation plate and the vacuum chamber wall, and the radial width of the tray is greater than or equal to the distance between the isolation plate and the vacuum chamber wall.

[0013] In order to solve the above technical problems, the technical solution of the present invention also provides a working method of a multi-layer liner wall plasma processing device, wherein the working method is as follows:

[0014] When a new multi-layer lining wall needs to be replaced, the first lifting mechanism contracts and the multi-layer lining wall falls onto the pallet. The second lifting mechanism contracts and the pallet descends until the multi-layer lining wall falls under the isolation board. The first lifting mechanism rebounds and approaches the isolation board, and the replacement of the multi-layer lining wall is completed.

[0015] The beneficial effects of the technical solution of the present invention are:

[0016] The present invention provides replaceable multi-layer lining walls in the vacuum chamber wall, and realizes the replacement of the layers of lining walls without breaking the vacuum state through a lifting mechanism, thereby greatly improving the equipment utilization rate of the plasma processing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the structure of a plasma processing device in the prior art;

[0018] Figure 2 A schematic diagram of the structure of a plasma processing device according to an embodiment of the present invention;

[0019] Figure 3 A schematic diagram of the working state of a plasma processing device according to an embodiment of the present invention;

[0020] Figure 4 Schematic diagram of the structural change process of the lifting mechanism. DETAILED DESCRIPTION

[0021] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but they are not intended to limit the present invention.

[0022] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0024] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0026] See also Figure 2 , Figure 3 and Figure 4 As shown, a multi-layer lining wall plasma processing device of an embodiment is shown, which includes a vacuum chamber wall 1, a multi-layer lining wall 7 installed on the inner wall of the vacuum chamber wall 1, a stage 4 fixed in a chamber in the vacuum chamber wall 1, and an isolation plate 3 connected to the stage 4 and horizontally isolating the chamber into a three-dimensional generating chamber and a vacuum chamber. An air inlet 5 and an air exhaust port 6 are respectively arranged at the top and bottom of the vacuum chamber wall 1. A lifting mechanism 8 for replacing the multi-layer lining wall 7 is installed at the bottom of the vacuum chamber wall 1. The lifting mechanism 8 is connected to a background controller, and the background controller controls the lifting mechanism 8 to replace the multi-layer lining wall.

[0027] In this embodiment, the lifting mechanism 8 includes a first lifting mechanism 81 installed on the vacuum chamber wall 1 for supporting the multi-layer lining wall 7 and a second lifting mechanism 82 installed at the bottom of the vacuum chamber wall 1 for replacing the multi-layer lining wall 7.

[0028] In this embodiment, the first lifting mechanism 81 is a telescopic pump, and the telescopic pump shaft 811 of the telescopic pump passes through the vacuum chamber wall 1 and is located at the bottom of the multi-layer lining wall 7 , and the telescopic pump shaft 811 is in contact with the isolation plate 3 .

[0029] In this embodiment, the second lifting mechanism 82 is a cylinder, and a tray 822 is fixed to the end of the cylinder shaft 821 of the cylinder. The initial state of the cylinder is an extended state. The tray 822 at the end of the cylinder shaft 821 in the extended state is located below the telescopic pump shaft 811.

[0030] In this embodiment, the number of layers of the multi-layer lining wall 7 is proportional to the thickness of the multi-layer lining wall 7 , and the number of layers of the multi-layer lining wall 7 is proportional to the distance from the telescopic pump shaft 811 passing through the vacuum chamber wall 1 to the isolation plate 3 .

[0031] In this embodiment, the thickness of the multi-layer lining wall 7 is equal to or less than the distance between the isolation plate 3 and the vacuum chamber wall 1 , and the radial width of the tray 822 is greater than or equal to the distance between the isolation plate 3 and the vacuum chamber wall 1 .

[0032] The characteristics and functions of the present invention can be further understood through the following description.

[0033] The working method of the multi-layer liner plasma processing device of this embodiment is as follows:

[0034] Please continue to see Figure 2 , Figure 3 and Figure 4As shown, the multi-layer lining wall 7 is composed of multiple layers of barrel-shaped rings, and the thickness of each layer is determined by the material strength of the multi-layer lining wall. A vacuum lifting mechanism (i.e., the second lifting mechanism 82, which can include lifting mechanisms in the form of motors, electromagnetics, cylinders, etc., and a cylinder is selected as the second lifting mechanism 82 in this embodiment) is installed below the multi-layer lining wall 7, and another vacuum lifting mechanism (i.e., the first lifting mechanism 81, which can also include lifting mechanisms in the form of motors, electromagnetics, cylinders, etc., and a telescopic pump is selected as the first lifting mechanism 81 in this embodiment) is installed on the side wall of the vacuum chamber wall 1.

[0035] When the first lining wall (such as Figure 4 When the inner wall 7 on the far left side shown in the figure is etched by plasma or chemically contaminated to an unacceptable time, the first lifting mechanism 81 is started, and the telescopic pump shaft 811 of the first lifting mechanism 81 retracts until the first layer of lining wall 7 falls down to the tray 822 of the second lifting mechanism 82 due to gravity. The cylinder shaft 821 of the second lifting mechanism 82 contracts and drives the tray 822 to recycle and replace the first layer of lining wall 7 that needs to be replaced, while the second layer of intact lining wall is exposed to plasma and restarted, thereby completing the replacement of the lining wall in a vacuum. The whole process does not require breaking the vacuum and can be completed in a very short time, greatly improving the operating time of this equipment.

[0036] In summary, the present invention greatly improves the equipment utilization rate of the plasma processing device by arranging replaceable multi-layer lining walls in the vacuum chamber wall and realizing the replacement of the layer lining walls without breaking the vacuum state through a lifting mechanism.

[0037] The above are only preferred embodiments of the present invention, and are not intended to limit the implementation methods and protection scope of the present invention. Those skilled in the art should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the description and illustrations of the present invention should be included in the protection scope of the present invention.

Claims

1. A multi-layer liner wall plasma processing device, characterized in that: It includes a vacuum chamber wall, a multi-layer lining wall installed on the inner wall of the vacuum chamber wall, a stage fixed in a chamber in the vacuum chamber wall, and an isolation plate connected to the stage and horizontally isolating the chamber into an equal-dimensional generating chamber and a vacuum chamber, wherein an air inlet and an air exhaust port are respectively arranged at the top and the bottom of the vacuum chamber wall, and a lifting mechanism for replacing the multi-layer lining wall is installed at the bottom of the vacuum chamber wall, and the lifting mechanism is connected to a background controller; The lifting mechanism includes a first lifting mechanism installed on the vacuum chamber wall for supporting the multi-layer lining wall and a second lifting mechanism installed at the bottom of the vacuum chamber wall for replacing the multi-layer lining wall; The first lifting mechanism is a telescopic pump, the telescopic pump shaft of which passes through the vacuum chamber wall and is located at the bottom of the multi-layer lining wall, and the telescopic pump shaft contacts the isolation plate; The second lifting mechanism is a cylinder, a tray is fixed to the end of the cylinder shaft of the cylinder, the initial state of the cylinder is an extended state, and the tray at the end of the cylinder shaft in the extended state is located below the telescopic pump shaft; The number of layers of the multi-layer lining wall is proportional to the thickness of the multi-layer lining wall, and the number of layers of the multi-layer lining wall is proportional to the distance from the point where the telescopic pump shaft passes through the vacuum chamber wall to the isolation plate.

2. The multi-layer liner plasma processing device according to claim 1, characterized in that: The thickness of the multi-layer lining wall is equal to or less than the distance between the isolation plate and the vacuum chamber wall, and the radial width of the tray is greater than or equal to the distance between the isolation plate and the vacuum chamber wall.

3. A working method of a multi-layer lining wall plasma treatment device, characterized in that: The working method is as follows: when a new multi-layer lining wall needs to be replaced, the first lifting mechanism contracts, the multi-layer lining wall falls onto the pallet, the second lifting mechanism contracts, the pallet descends until the multi-layer lining wall falls under the isolation board, the first lifting mechanism rebounds and approaches the isolation board, and the replacement of the multi-layer lining wall is completed.

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