A Multipolar Quantum Cascade Ring Laser

Abstract

The invention discloses a multipolar quantum cascade ring laser, which comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base, an emitter, and an emitter sequentially arranged from bottom to top There is a step-like setting between the base and the quantum cascade structure layer and the collector; the laser also includes a collector electrode set on the top of the collector or under the substrate, a base electrode set on the top of the base, The emitter electrode placed on top of the emitter. A ring waveguide and a strip straight waveguide coupled with the ring waveguide are also etched on the laser. The multipolar quantum cascade ring laser has simple design, good tunable characteristics, multi-wavelength or wide-spectrum or chaotic laser or frequency comb output, and can effectively reduce the mid-infrared and terahertz sources in a wide range of mid-infrared and terahertz applications. application cost.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor lasers, in particular to a multipolar quantum cascade ring laser. Background technique

[0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applications including ...

Examples

Embodiment 1

[0069] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0070] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two kinds of QCL subunits, A and B, which are composed of an active region and an implanted region, and the implanted region only contains a section of doped region. ...

Embodiment 2

[0077] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doping regions of the B-type QCL subunit are respectively N 1 and N 2 (N 1 ≠N 2 ).

[0078] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠ N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠ N 2 ).

[0079] same, image 3 Among them, the A and B QCL subunits are the same in other parameters except the doping concentration parameter, where other parameters include: the lay...

Embodiment 3

[0081] Such as Figure 5 As shown, it is a schematic structural diagram of the multipolar quantum cascade ring laser of the present invention, the substrate 7, the collector electrode 8, and the quantum cascade structure layer 9 are sequentially arranged along the z direction in the multipolar quantum cascade ring laser. , a quantum level matching layer 10, a base 11 and an emitter 12, and the emitter 12 is etched into a strip-shaped straight waveguide 18 and a ring waveguide 19 structure. The base 11 and the emitter 12 are arranged in steps, and the collector 8 and the quantum cascade structure layer 9 are also arranged in steps. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quantum cascade structure layer 9, a quantum energy level matching l...

technical field

[0001] The invention belongs to the technical field of semiconductor lasers, in particular to a multipolar quantum cascade ring laser. Background technique

[0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applications including ...

Examples

Embodiment 1

[0069] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0070] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two kinds of QCL subunits, A and B, which are composed of an active region and an implanted region, and the implanted region only contains a section of doped region. ...

Embodiment 2

[0077] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doping regions of the B-type QCL subunit are respectively N 1 and N 2 (N 1 ≠N 2 ).

[0078] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠ N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠ N 2 ).

[0079] same, image 3 Among them, the A and B QCL subunits are the same in other parameters except the doping concentration parameter, where other parameters include: the lay...

Embodiment 3

[0081] Such as Figure 5 As shown, it is a schematic structural diagram of the multipolar quantum cascade ring laser of the present invention, the substrate 7, the collector electrode 8, and the quantum cascade structure layer 9 are sequentially arranged along the z direction in the multipolar quantum cascade ring laser. , a quantum level matching layer 10, a base 11 and an emitter 12, and the emitter 12 is etched into a strip-shaped straight waveguide 18 and a ring waveguide 19 structure. The base 11 and the emitter 12 are arranged in steps, and the collector 8 and the quantum cascade structure layer 9 are also arranged in steps. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quantum cascade structure layer 9, a quantum energy level matching l...

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