Film thickness detection device

Abstract

The present application provides a film thickness detection device, which includes: a detection structure, including a detection electrode; a common electrode, which is arranged opposite to the detection electrode in a first direction and spaced apart, and the spacing between the detection structure and the common electrode is a predetermined spacing; a dielectric part, which is located between the detection electrode and the common electrode, and the dielectric part is located on the surface of the detection structure and / or on the surface of the common electrode, and the thickness of the dielectric part is less than the predetermined spacing, and the dielectric part is used to increase the dielectric constant between the detection electrode and the common electrode. By arranging the dielectric part between the detection electrode and the common electrode, the dielectric part increases the dielectric constant between the detection electrode and the common electrode, that is, improves the conductive characteristics between the detection electrode and the common electrode, so that the detection device has higher detection sensitivity and accuracy.

Description

Technical Field

[0001] The present application relates to the field of film thickness detection, and in particular, to a film thickness detection device. Background Art

[0002] The existing film thickness detection device uses the principle of electrostatic charge induction to detect the film thickness. The film thickness detection device includes a common electrode, a detection electrode and a detection circuit. The common electrode and the detection electrode are arranged opposite to each other in a first direction and are spaced a certain distance apart to form a channel for the object to be measured with a uniform gap.

[0003] When the existing film thickness detection device is working, a pulse signal is applied to the common electrode, and a voltage signal will be induced on the detection electrode. When the film to be detected passes over the detection electrode, the voltage on the detection electrode will change. The magnitude of the voltage change is related to the nature and thickness of the object passing through. Since the detection circuit is electrically connected to the detection electrode, and the circuit structure of the detection circuit can convert the obtained voltage change value into the thickness of the film to be detected, the detection device can detect the thickness of the film, and then determine whether the thickness of the film is abnormal and whether there are foreign objects, defects or folds on its surface.

[0004] The above-mentioned existing film thickness detection device has the following problems: in order to improve the detection sensitivity of the film thickness detection device, the distance between the detection channel formed by the common electrode and the detection electrode must be reduced as much as possible. However, if the distance is too small, it is not easy for the film to pass through the detection channel. During the film scanning process, especially during the continuous scanning process, the film is easily stuck, thus limiting the practical application of such film thickness detection devices. Specifically, the film includes banknotes, ordinary paper and other films.

[0005] The above information disclosed in the background technology section is only used to enhance the understanding of the background technology of the technology described in this article. Therefore, the background technology may contain certain information that does not form the prior art known in this country for those skilled in the art. Summary of the invention

[0006] The main purpose of the present application is to provide a film thickness detection device to solve the problem that the detection device in the prior art is difficult to improve the detection sensitivity without reducing the width of the detection channel.

[0007] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a film thickness detection device is provided, comprising: a detection structure, including a detection electrode; a common electrode, which is arranged opposite to and spaced apart from the detection electrode in a first direction, and the distance between the detection structure and the common electrode is a predetermined distance; a dielectric portion, which is located between the detection electrode and the common electrode, and the dielectric portion is located on the surface of the detection structure and / or on the surface of the common electrode, the thickness of the dielectric portion is less than the predetermined distance, and the dielectric portion is used to increase the dielectric constant between the detection electrode and the common electrode.

[0008] Furthermore, the detection structure also includes a plurality of detection electrodes, and the plurality of detection electrodes are arranged in sequence at least along a second direction, and the second direction is perpendicular to the first direction and the moving direction of the object to be detected, and the length of the medium part in the second direction is greater than or equal to the total length of the plurality of detection electrodes in the second direction.

[0009] Furthermore, the dielectric portion is located on a surface of the common electrode close to the detection electrode.

[0010] Furthermore, the common electrode is a cylindrical electrode, and the axial direction of the cylindrical electrode is parallel to the second direction.

[0011] Furthermore, the dielectric portion is disposed around the outer periphery of the common electrode.

[0012] Furthermore, the thickness of the dielectric portion is greater than or equal to the radius of the common electrode.

[0013] Furthermore, the common electrode is rotatable, and the material of the dielectric portion includes at least one of ether polyurethane, Teflon and silicone.

[0014] Furthermore, the detection structure also includes: a frame having a accommodating cavity; a circuit board located in the accommodating cavity; a plurality of electrostatic induction chips arranged in sequence along the second direction, each of the electrostatic induction chips being located on the surface of the circuit board close to the common electrode, and each of the electrostatic induction chips including a plurality of detection electrodes arranged in sequence along the second direction; and a detection circuit located in the accommodating cavity and on the surface of the circuit board away from the electrostatic induction chip.

[0015] Furthermore, the dielectric portion is located on a surface of the frame body on one side close to the common electrode and / or a surface of the detection electrode on one side close to the common electrode.

[0016] Furthermore, the material of the dielectric part includes conductive material and / or non-conductive material.

[0017] Furthermore, the material of the dielectric part is a conductive material.

[0018] By applying the technical solution of the present application, a dielectric part is provided between the detection electrode and the common electrode. Since the dielectric part increases the dielectric constant between the detection electrode and the common electrode, the conductive characteristics between the detection electrode and the common electrode are improved. Compared with the detection device without the dielectric part in the prior art, the detection sensitivity of the detection device is improved without reducing the width of the predetermined spacing between the detection electrode and the common electrode, or the detection sensitivity of the detection device is not reduced when the width of the spacing between the detection electrode and the common electrode is increased within a certain range. The detection device has high detection sensitivity and accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0020] Figure 1 A schematic diagram of a film thickness detection device according to an embodiment of the present application is shown;

[0021] Figure 2 A schematic diagram of another film thickness detection device according to an embodiment of the present application is shown; and

[0022] Figure 3 A schematic diagram of another film thickness detection device according to an embodiment of the present application is shown.

[0023] The above drawings include the following reference numerals:

[0024] 10. Common electrode; 11. Conductor; 12. Dielectric part; 20. Detection electrode; 21. Frame; 22. Circuit board; 23. Electrostatic induction chip; 24. Cover; 30. Detection circuit. DETAILED DESCRIPTION

[0025] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0026] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0027] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be intermediate elements. Moreover, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element through a third element.

[0028] As introduced in the background technology, it is difficult for the detection device in the prior art to improve the detection sensitivity without reducing the width of the detection channel. In order to solve the problem that it is difficult for the above detection device to improve the detection sensitivity without reducing the width of the detection channel, an embodiment of the present application proposes a film thickness detection device.

[0029] A typical embodiment of the present application provides a film thickness detection device, such as Figures 1 to 3 As shown, the detection device includes a detection structure, a common electrode 10 and a dielectric portion 12, the detection structure includes a detection electrode 20; the common electrode 10 and the detection electrode 20 are arranged opposite to and spaced apart in a first direction, and the distance between the detection structure and the common electrode 10 is a predetermined distance; the dielectric portion 12 is located between the detection electrode 20 and the common electrode 10, and the dielectric portion 12 is located on the surface of the detection structure and / or on the surface of the common electrode 10, the thickness of the dielectric portion 12 is less than the predetermined distance, and the dielectric portion 12 is used to increase the dielectric constant between the detection electrode 20 and the common electrode 10.

[0030] In the above scheme, by setting a dielectric part between the detection electrode and the common electrode, the dielectric part increases the dielectric constant between the detection electrode and the common electrode, that is, improves the conductive characteristics between the detection electrode and the common electrode. Compared with the detection device without a dielectric part in the prior art, the detection sensitivity of the detection device is improved without reducing the width of the predetermined spacing between the detection electrode and the common electrode, or the detection sensitivity of the detection device is not reduced when the width of the spacing between the detection electrode and the common electrode is increased within a certain range. The detection device has high detection sensitivity and accuracy.

[0031] It should be noted that the above-mentioned detection device is used to detect the thickness of films such as banknotes. When detecting the thickness of the film, the film to be detected is placed in the gap between the detection electrode and the common electrode. The gap between the detection electrode and the common electrode is larger than the thickness of the film to be detected, that is, the width of the above-mentioned predetermined spacing is larger than the thickness of the film to be detected, so that the film to be detected can pass through the gap smoothly.

[0032] An embodiment of the present application, such as Figures 1 to 3 As shown, the detection structure further includes a plurality of detection electrodes 20, which are arranged in sequence at least along a second direction, the second direction being perpendicular to the first direction and the moving direction of the object to be detected, the length of the dielectric portion 12 in the second direction being greater than or equal to the total length of the plurality of detection electrodes 20 in the second direction, each of the detection electrodes 20 including a plurality of electrostatic charge sensing integrated circuits, and the plurality of detection electrodes 20 are arranged to ensure that the entire area of ​​the film to be detected is detected, and the length of the dielectric portion 12 in the second direction is arranged to be greater than or equal to the total length of the plurality of detection electrodes 20 in the second direction to ensure that the dielectric constant of the entire detection area of ​​the film to be detected is improved, thereby improving the detection sensitivity of the detection device.

[0033] Another embodiment of the present application, as Figures 1 to 3 As shown, the dielectric portion 12 is located on the surface of the common electrode 10 close to the detection electrode 20. The common electrode 10 includes a conductor 11. The dielectric is arranged on the surface of the conductor 11 close to the detection electrode 20, thereby increasing the dielectric constant between the detection electrode 20 and the common electrode 10, thereby improving the detection sensitivity of the detection device.

[0034] Another embodiment of the present application is as follows: Figures 1 to 3 As shown, the common electrode 10 is a cylindrical electrode, and the axial direction of the cylindrical electrode is parallel to the second direction to ensure that the projection area of ​​the common electrode 10 on the detection structure is large enough. When a pulse signal is applied to the cylindrical electrode, the detection electrode 20 induces a sufficient voltage signal, thereby making the detection area of ​​the film to be detected large enough, thereby improving the detection sensitivity of the detection device.

[0035] Of course, the common electrode of the present application is not limited to a cylindrical electrode, but may also be in other shapes, such as a flat electrode or a ring electrode, etc.

[0036] Another embodiment of the present application, as Figures 1 to 3 As shown, the dielectric portion 12 is disposed around the outer periphery of the common electrode 10 to increase the dielectric constant between the detection electrode 20 and the common electrode 10, thereby improving the detection sensitivity of the detection device.

[0037] Another embodiment of the present application, as Figure 3 As shown, the thickness of the dielectric portion 12 is greater than or equal to the radius of the common electrode 10, which reduces the weight of the common electrode 10 of this embodiment, so the energy consumption required for the active rotation of the common electrode 10 of this embodiment is lower. At the same time, the common electrode of the thickness detection device of this embodiment is easier to manufacture, with lower manufacturing costs, which is conducive to mass production. However, the thickness of the dielectric portion is not limited to being greater than or equal to the radius of the common electrode, and can also be less than the radius of the common electrode.

[0038] Another embodiment of the present application is as follows: Figure 2 or Figure 3 As shown, the common electrode 10 is rotatable, and the material of the dielectric portion 12 includes at least one of ether polyurethane, Teflon and silicone. The dielectric portion 12 is arranged on the periphery of the common electrode 10, and then by rotating the common electrode 10, the dielectric constant between the detection electrode 20 and the common electrode 10 is increased in a larger area, thereby improving the detection sensitivity of the detection device.

[0039] Of course, the material of the dielectric part of the present application is not limited to the above materials, and may be other materials, including only conductive materials, only non-conductive materials, or both conductive materials and non-conductive materials, such as conductive rubber.

[0040] An embodiment of the present application, such as Figures 1 to 3As shown, the detection structure further includes a frame 21, a circuit board 22, a plurality of electrostatic induction chips 23 arranged in sequence along the second direction, and a detection circuit 30. The frame 21 has a housing cavity; the circuit board 22 is located in the housing cavity; a plurality of electrostatic induction chips 23 arranged in sequence along the second direction, each of the electrostatic induction chips 23 is located on the surface of the circuit board 22 on the side close to the common electrode 10, and each of the electrostatic induction chips 23 includes a plurality of detection electrodes 20 arranged in sequence along the second direction; the detection circuit 30 is located in the housing cavity and on the surface of the circuit board 22 on the side away from the electrostatic induction chip 23. The frame 21 also has a shell. The frame 21 plays a supporting role. The circuit board 22 is located in the housing cavity. , a plurality of electrostatic induction chips 23 are arranged on the circuit board 22, and a cover plate 24 is arranged above the electrostatic induction chip 23; when the detection device is working, a pulse signal is applied to the conductive cylinder of the common electrode 10, and a voltage signal will be induced on the electrostatic induction chip. When the film to be detected passes over the electrostatic induction chip, the voltage on the electrostatic induction chip will change, and the magnitude of the voltage change is related to the nature and thickness of the object passed. Since the detection circuit 30 is partially electrically connected to the detection electrode 20, and the circuit structure of the detection circuit 30 can convert the obtained voltage change value into the thickness of the film to be detected, the detection circuit 30 can detect the thickness of the film, and then deduce whether the thickness of the film is abnormal, and whether there are foreign objects, defects or folds on its surface.

[0041] In one embodiment of the present application, the dielectric portion is located on a surface of one side of the frame body close to the common electrode and / or on a surface of one side of the detection electrode close to the common electrode, so as to increase the dielectric constant between the detection electrode and the common electrode over a larger area, thereby improving the detection sensitivity of the detection device.

[0042] In one embodiment of the present application, the material of the dielectric part includes a conductive material and / or a non-conductive material. The conductive material and the non-conductive material can increase the dielectric constant between the detection electrode and the common electrode, thereby improving the detection sensitivity of the detection device.

[0043] In one embodiment of the present application, the material of the dielectric part is a conductive material, and the conductive material better increases the dielectric constant between the detection electrode and the common electrode, thereby improving the detection sensitivity of the detection device.

[0044] Example 1

[0045] like Figure 1 As shown, the film thickness detection device includes a detection electrode 20 and a common electrode 10. The detection electrode 20 and the common electrode 10 are arranged opposite to each other and spaced apart in a first direction.

[0046] The detection electrode 20 includes a frame 21, a circuit board 22, an electrostatic induction chip 23, a detection circuit 30 and a cover plate 24. The circuit board 22 is arranged in the frame 21. The cover plate 24 is arranged parallel to the circuit board 22 and connected to the frame 21. The electrostatic induction chip 23 is arranged in sequence along the second direction on the surface of the circuit board 22 close to the common electrode 10, and the detection circuit 30 is arranged on the other surface of the circuit board 22.

[0047] The common electrode 10 includes a conductor 11, and a dielectric part is provided on the surface of one side of the conductor 11 close to the detection electrode 20. The second direction is perpendicular to the first direction and the moving direction of the object to be detected. A detection channel is formed between the dielectric part and the cover plate of the detection electrode. The size of the detection channel can be set according to actual needs and the type of the object to be detected. The thickness of the dielectric part in the first direction can be set according to the actual detection environment and the different objects to be detected. The length of the electrostatic induction chip 23 in the second direction is less than the length of the dielectric part in the second direction. The dielectric part is preferably a conductive medium with small surface friction, and the conductivity can be set to 0.4 megohms / mm. The conductivity can be selected according to the actual use occasion and the sensitivity. In theory, the sensitivity of the film thickness detection device is proportional to the conductivity. The conductivity of the conductive medium can be set by changing the ratio of the conductive component to the non-conductive component in the conductive medium. The shape of the conductor 11 can be set according to the actual detection needs, such as a cylinder, a cuboid, a prism, a flat plate, etc.

[0048] In the film thickness detection device of the present embodiment, a certain pulse signal is applied to the conductor 11 of the common electrode 10, and a certain voltage signal will be induced on the electrostatic induction chip 23 opposite. When the film to be detected passes through the detection channel, the voltage signal on the electrostatic induction chip 23 will change. The magnitude of the voltage change is related to the nature and thickness of the object passing through. Since the detection circuit is electrically connected to the detection electrode 20, and the circuit structure of the detection circuit can convert the obtained voltage change value into the thickness of the film to be detected, the detection circuit 30 can detect the thickness of the film, and then determine whether the thickness of the film is abnormal, and whether there are foreign objects, defects or folds on its surface. The conductor 11 of the common electrode 10 of the film thickness detection device of the present invention is provided with a dielectric part 12. The existence of the dielectric part 12 changes the dielectric constant between the common electrode and the detection electrode, thereby improving the sensitivity of the film thickness detection device, so the spacing of the detection channel can be increased to ensure that the film can pass through the detection channel smoothly.

[0049] Example 2

[0050] like Figure 2As shown, it is a structural schematic diagram of the second film thickness detection device of the present invention. The detection electrode 20 is the same as that of Example 1, and the difference from Example 1 is that the common electrode 10 includes a rod-shaped conductor 11 and an annular dielectric part 12, and the annular dielectric part is sleeved on the rod-shaped conductor 11 along the second direction, and the common electrode 10 is set to an active rotation state. Due to the presence of the annular dielectric part 12, the sensitivity of the detection device is increased, so that the spacing of the detection channel can be increased, which is conducive to the smooth passage of the object to be detected through the detection channel. At the same time, the rod-shaped conductor 11 is set to an active rotation state, and the dielectric part 12 can be selected from a material with a large surface friction force, which increases the friction between the dielectric part 12 and the object to be detected, so that the object to be detected can be driven to pass through the detection channel smoothly. The method of applying a pulse signal to the rod-shaped conductor can be: conductive slip ring, carbon brush, probe, etc. The above-mentioned dielectric part 12 can include a conductive material, such as conductive rubber, or can only include non-conductive materials, such as polyacetal, silicone, fluororesin, ether polyurethane, etc., preferably including a conductive material.

[0051] Example 3

[0052] like Figure 3 As shown, it is a schematic diagram of the structure of the third film thickness detection device of the present invention. The detection device is used to detect the thickness of banknotes, and the detection electrode 20 is the same as that of Example 1 and Example 2. The difference is that the diameter of the conductor 11 of the common electrode 10 of this embodiment is smaller than that of Example 2, and the thickness of the dielectric part 12 is greater than that of Example 2, which reduces the weight of the common electrode 10 of this embodiment, so the energy consumption required for the active rotation of the common electrode 10 of this embodiment is lower. At the same time, the common electrode of the film thickness detection device of this embodiment is easier to manufacture, with lower manufacturing cost, which is conducive to mass production.

[0053] From the above, it can be known that by setting a dielectric part on the conductor of the common electrode of the thin film thickness detection device of the present invention, the dielectric constant between the common electrode and the detection electrode is changed, thereby improving the detection sensitivity of the thin film thickness detection device, so that the spacing of the detection channel can be increased, which is conducive to the smooth passage of the thin film through the detection channel. At the same time, a dielectric part with a large surface friction can be selected to increase the friction between it and the thin film. When the common electrode actively rotates, it can effectively drive the thin film through the detection channel without jamming the banknotes. The thickness detection device of the present invention is simple and effective, does not require an additional anti-banknote jamming device, has a simple and easy manufacturing process, low production cost, short manufacturing cycle, and is suitable for mass production. At the same time, it is very meaningful for miniaturization of financial equipment and reducing the price of financial equipment.

[0054] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0055] The film thickness detection device of the present application, by setting a dielectric part between the detection electrode and the common electrode, increases the dielectric constant between the detection electrode and the common electrode due to the dielectric part, that is, improves the conductive characteristics between the detection electrode and the common electrode. Compared with the detection device without a dielectric part in the prior art, the detection sensitivity of the detection device is improved without reducing the width of the predetermined spacing between the detection electrode and the common electrode, or the detection sensitivity of the detection device is not reduced when the width of the spacing between the detection electrode and the common electrode is increased within a certain range. The detection device has high detection sensitivity and accuracy.

[0056] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A film thickness detection device, It is characterized in that include: A detection structure, including a detection electrode; A common electrode is arranged opposite to and spaced from the detection electrode in a first direction, and a distance between the detection structure and the common electrode is a predetermined distance; a dielectric portion, located between the detection electrode and the common electrode, and located on the surface of the detection structure and / or on the surface of the common electrode, with a thickness of the dielectric portion being less than the predetermined distance, and the dielectric portion being used to increase the dielectric constant between the detection electrode and the common electrode; The detection structure further comprises a plurality of detection electrodes, wherein the plurality of detection electrodes are arranged in sequence at least along a second direction, the second direction is respectively perpendicular to the first direction and the moving direction of the object to be detected, and the length of the dielectric portion in the second direction is greater than or equal to the total length of the plurality of detection electrodes in the second direction; The material of the dielectric portion includes a conductive material and / or a non-conductive material.

2. The detection device according to claim 1, It is characterized in that The dielectric portion is located on a surface of the common electrode that is close to the detection electrode.

3. The detection device according to claim 2, It is characterized in that The common electrode is a cylindrical electrode, and the axial direction of the cylindrical electrode is parallel to the second direction. The detection device according to claim 3 , wherein the dielectric portion is disposed around an outer periphery of the common electrode.

5. The detection device according to claim 4, It is characterized in that The thickness of the dielectric portion is greater than or equal to the radius of the common electrode.

6. The detection device according to claim 4, It is characterized in that The common electrode is rotatable, and the material of the dielectric part includes at least one of ether polyurethane, Teflon and silicone.

7. The detection device according to claim 1, It is characterized in that The detection structure also includes: A frame body having a receiving cavity; A circuit board is located in the accommodating cavity; a plurality of electrostatic induction chips sequentially arranged along the second direction, each of the electrostatic induction chips being located on a surface of the circuit board close to the common electrode, and each of the electrostatic induction chips comprising a plurality of the detection electrodes sequentially arranged along the second direction; The detection circuit is located in the accommodating cavity and on a surface of a side of the circuit board away from the electrostatic induction chip.

8. The detection device according to claim 7, It is characterized in that The dielectric portion is located on a surface of the frame body on a side close to the common electrode and / or a surface of the detection electrode on a side close to the common electrode.

9. The detection device according to claim 1, It is characterized in that The material of the dielectric part is a conductive material.

Images