Inductively coupled reactor and working method thereof

Abstract

An inductively coupled reactor and a working method thereof, the inductively coupled reactor comprising: a reaction chamber body; an inductively coupled plasma source located above the reaction chamber body; the inductively coupled plasma source comprising: a first reaction medium chamber; a second reaction medium chamber located above the first reaction medium chamber, the bottom of the second reaction medium chamber and the middle area of ​​the top of the first reaction medium chamber being connected, the bottom of the side wall of the second reaction medium chamber extending into the first reaction medium chamber and having an adjustable height; a lower radio frequency antenna located at the side of the first reaction medium chamber; an upper radio frequency antenna located at the side of the second reaction medium chamber; the radio frequency power fed into the upper radio frequency antenna and the radio frequency power fed into the lower radio frequency antenna are adjustable respectively.

Description

Technical Field

[0001] The invention relates to the field of semiconductor manufacturing, and in particular to an inductively coupled reactor and a working method thereof. Background Art

[0002] In semiconductor manufacturing, there are many processes involved, each of which is completed by certain equipment and processes. Among them, etching process is an important process in semiconductor manufacturing, such as plasma etching process. Plasma etching process uses the reaction gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons, as well as highly chemically active neutral atoms, molecules and free radicals, and etches the etching object through physical and chemical reactions.

[0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer, including: plasma density distribution, radio frequency electric field, temperature distribution, etc. Among them, plasma density distribution is a very important etching condition. For example, in general, the plasma density distributed above the center area of ​​the wafer is greater than the plasma density distributed above the edge area of ​​the wafer, and this distribution is difficult to adjust.

[0004] Therefore, it is necessary to propose an inductively coupled reactor that can controllably adjust the plasma distribution to meet the needs. Summary of the invention

[0005] The problem solved by the present invention is to provide an inductively coupled reactor and a working method thereof, which can enhance the control capability of plasma distribution.

[0006] In order to solve the above technical problems, the present invention provides an inductively coupled reactor, comprising: a reaction chamber body; an inductively coupled plasma source located above the reaction chamber body; the inductively coupled plasma source comprises: a first reaction medium chamber; a second reaction medium chamber located above the first reaction medium chamber, the bottom of the second reaction medium chamber and the middle area of ​​the top of the first reaction medium chamber are connected, and the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and is height-adjustable; a lower radio frequency antenna located at the side of the first reaction medium chamber; an upper radio frequency antenna located at the side of the second reaction medium chamber; the radio frequency power fed into the upper radio frequency antenna and the radio frequency power fed into the lower radio frequency antenna are respectively adjustable.

[0007] Optionally, the second reaction medium chamber further includes a bearing portion, which is fixed to the side wall of the second reaction medium chamber and extends outward from the side wall of the second reaction medium chamber, and the bearing portion is located between the top end and the bottom end of the side wall of the second reaction medium chamber.

[0008] Optionally, the inductively coupled plasma source further includes: a sealing member, wherein the sealing member is located between the supporting portion and a top surface of the first reaction medium chamber.

[0009] Optionally, the inductively coupled plasma source further comprises: a height control component located between the supporting portion and the top surface of the first reaction medium chamber, wherein the height control component is suitable for controlling a longitudinal distance between the top surfaces of the second reaction medium chamber and the first reaction medium chamber.

[0010] Optionally, the height control component is a dielectric ring, and the thickness of the dielectric ring is adjustable.

[0011] Optionally, the inductively coupled plasma source further includes: a first seal, the first seal is located between the dielectric ring and the top surface of the first reaction medium chamber; and a second seal, the second seal is located between the dielectric ring and the bearing portion.

[0012] Optionally, the height control component is a spring.

[0013] Optionally, the inductively coupled plasma source also includes: a first gas inlet channel penetrating the top wall of the first reaction medium chamber, the first gas inlet channel being suitable for introducing etching gas for etching wafers into the first reaction medium chamber; and a second gas inlet channel located at the top of the second reaction medium chamber, the second gas inlet channel being suitable for introducing etching gas for etching wafers into the second reaction medium chamber.

[0014] Optionally, the lower RF antenna has a first antenna terminal and a second antenna terminal, and the upper RF antenna has a third antenna terminal and a fourth antenna terminal; the first antenna terminal is suitable for feeding a first RF, and the third antenna terminal is suitable for feeding a second RF, and the sizes of the first RF and the second RF are adjustable.

[0015] Optionally, the inductively coupled plasma source also includes: a radio frequency source; a radio frequency matcher, one end of the radio frequency matcher is connected to the radio frequency source; a first power divider, one end of the first power divider is connected to the other end of the radio frequency matcher, and the other end of the first power divider is connected to the first antenna terminal; a second power divider, one end of the second power divider is connected to the other end of the radio frequency matcher, and the other end of the second power divider is connected to the third antenna terminal; a first voltage balancing capacitor, one end of the first voltage balancing capacitor is connected to the second antenna terminal, and the other end of the first voltage balancing capacitor is grounded; a second voltage balancing capacitor, one end of the second voltage balancing capacitor is connected to the fourth antenna terminal, and the other end of the second voltage balancing capacitor is grounded.

[0016] Optionally, it also includes: a wafer clamping platform located in the reaction chamber body and below the first reaction medium chamber.

[0017] Optionally, it also includes: a radio frequency isolation ring located on the side of the wafer clamping platform; and a plasma confinement ring located outside the radio frequency isolation ring.

[0018] Optionally, it also includes: a first shielding cover, which is located outside the first reaction medium chamber and the lower RF antenna, and is used to perform RF shielding on the first reaction medium chamber and the lower RF antenna; and a second shielding cover, which is located outside the second reaction medium chamber and the upper RF antenna, and is used to perform RF shielding on the second reaction medium chamber and the upper RF antenna.

[0019] Optionally, it also includes: a first cooling device, the first cooling device is located on the top of the first shielding cover, and the first cooling device is used to cool the lower RF antenna and the first reaction medium chamber; a second cooling device, the second cooling device is located on the top of the second shielding cover, and the second cooling device is used to cool the upper RF antenna and the second reaction medium chamber.

[0020] The present invention also provides a working method of an inductively coupled reactor, using any one of the inductively coupled reactors described above, comprising: placing a wafer in the reaction chamber body; adjusting the RF power fed into the upper RF antenna and the RF power fed into the lower RF antenna; after adjusting the RF power fed into the upper RF antenna and the RF power fed into the lower RF antenna, the lower RF antenna generates plasma inside the first reaction medium chamber, and the upper RF antenna generates plasma inside the second reaction medium chamber.

[0021] Optionally, the inductively coupled plasma source further includes: a height control component located between the supporting portion and the top surface of the first reaction medium chamber; the working method further includes: using the height control component to control the position of the first reaction medium chamber relative to the second reaction medium chamber.

[0022] Optionally, the inductively coupled plasma source also includes: a first gas inlet channel penetrating the top wall of the first reaction medium chamber, the first gas inlet channel being suitable for introducing etching gas for etching wafers into the first reaction medium chamber; a second gas inlet channel located at the top of the second reaction medium chamber, the second gas inlet channel being suitable for introducing etching gas for etching wafers into the second reaction medium chamber; the working method also includes: adjusting the gas type and flow rate in the first gas inlet channel and the gas type and flow rate in the second gas inlet channel.

[0023] Optionally, the inductively coupled plasma source also includes: a radio frequency source; a radio frequency matcher, one end of the radio frequency matcher is connected to the radio frequency source; a first power divider, one end of the first power divider is connected to the other end of the radio frequency matcher, and the other end of the first power divider is connected to the first antenna terminal; a second power divider, one end of the second power divider is connected to the other end of the radio frequency matcher, and the other end of the second power divider is connected to the third antenna terminal; a first voltage balancing capacitor, one end of the first voltage balancing capacitor is connected to the second antenna terminal, and the other end of the first voltage balancing capacitor is grounded; a second voltage balancing capacitor, one end of the second voltage balancing capacitor is connected to the fourth antenna terminal, and the other end of the second voltage balancing capacitor is grounded; adjusting the radio frequency power fed into the upper radio frequency antenna and the radio frequency power fed into the lower radio frequency antenna, including: using the first power divider to adjust the radio frequency power fed into the lower radio frequency antenna, and using the second power divider to adjust the radio frequency power fed into the upper radio frequency antenna.

[0024] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0025] The inductively coupled reactor provided by the technical solution of the present invention comprises a first reaction medium chamber and a second reaction medium chamber located above the first reaction medium chamber, wherein the lower radio frequency antenna is used to generate plasma in the first reaction medium chamber, and the upper radio frequency antenna is used to generate plasma in the second reaction medium chamber. Since the bottom of the second reaction medium chamber and the middle area of ​​the top of the first reaction medium chamber are connected, the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and is height-adjustable, so two relatively independent counterion generating chambers can be formed by the side wall of the second reaction medium chamber extending into the first reaction medium chamber. The plasma density distribution generated inside the first reaction medium chamber is adjustable by adjusting the radio frequency power fed into the lower radio frequency antenna, and the plasma density distribution generated inside the second reaction medium chamber is adjustable by adjusting the radio frequency power fed into the upper radio frequency antenna. Thus, the distribution of plasma above the wafer is better controlled, and the wafer is etched in a corresponding controllable manner. In summary, the inductively coupled reactor can enhance the controllability of plasma distribution.

[0026] Furthermore, the inductively coupled plasma source further comprises: a first gas inlet channel penetrating the top wall of the first reaction medium chamber, the first gas inlet channel being suitable for introducing etching gas for etching wafers into the first reaction medium chamber; and a second gas inlet channel located at the top of the second reaction medium chamber, the second gas inlet channel being suitable for introducing etching gas for etching wafers into the second reaction medium chamber. The gas in the first gas inlet channel and the gas in the second gas inlet channel can be independently adjusted, thereby realizing independent control of the plasma density in two relatively independent counterion generating chambers.

[0027] Furthermore, the inductively coupled plasma source also includes: a height control component located between the supporting portion and the top surface of the first reaction medium chamber, wherein the height control component is suitable for controlling the longitudinal distance between the top surfaces of the second reaction medium chamber and the first reaction medium chamber, thereby controlling the degree of decoupling of two relatively independent counter ion generating chambers. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the cross-sectional structure of an inductively coupled reactor;

[0029] Figure 2 is a schematic cross-sectional structural diagram of an inductively coupled reactor in one embodiment of the present invention;

[0030] Figure 3 A working method of an inductively coupled reactor in another embodiment of the present invention;

[0031] Figure 4 is a schematic cross-sectional structural diagram of an inductively coupled reactor in another embodiment of the present invention;

[0032] Figure 5 It is a schematic cross-sectional structure diagram of an inductively coupled reactor in another embodiment of the present invention. DETAILED DESCRIPTION

[0033] As described in the background art, it is difficult to controllably adjust the distribution of generated ions in existing inductively coupled reactors.

[0034] An inductively coupled reactor, reference Figure 1 , including an inductively coupled plasma source, the inductively coupled plasma source includes a shielding cover 1000, a reaction chamber medium tube 1001 located inside the shielding cover 1000, and a coil-shaped radio frequency antenna 1002 located on the side wall of the reaction chamber medium tube 1001, the reaction chamber medium tube 1001 is columnar in shape, and the coil-shaped radio frequency antenna 1002 surrounds the reaction chamber medium tube 1001, and the position of the coil-shaped radio frequency antenna 1002 is fixed.

[0035] In the above-mentioned inductively coupled reactor, gas is introduced into the reaction chamber medium tube 1001 from the air inlet pipe 1003 at the top of the reaction chamber medium tube 1001, mixed in the columnar reaction chamber medium tube 1001, and the radio frequency antenna 1002 generates plasma in the reaction chamber medium tube 1001, and the plasma then diffuses into the reaction chamber body. The wafer is located in the reaction chamber body and opposite to the inductively coupled plasma source. The plasma density distribution above the wafer is high in the middle and low at the edges, and cannot be adjusted, resulting in uneven etching.

[0036] Secondly, a cooling fan 1004 is provided on the top of the shielding cover 1000. However, since the reaction chamber medium tube 1001 is in a columnar shape, the cooling fan 1004 will not cool the top and side walls of the reaction chamber medium tube 1001 evenly, resulting in uneven distribution of plasma density in the reaction chamber medium tube 1001, and further resulting in uneven distribution of plasma density above the wafer.

[0037] In order to solve the above technical problems, an embodiment of the present invention provides an inductively coupled reactor, referring to Figure 2 ,include:

[0038] Reaction chamber body 10;

[0039] an inductively coupled plasma source located above the reaction chamber body 10;

[0040] The inductively coupled plasma source includes: a first reaction medium chamber 201; a second reaction medium chamber 202 located above the first reaction medium chamber 201, the bottom of the second reaction medium chamber 202 and the top middle area of ​​the first reaction medium chamber 201 are connected, and the bottom of the side wall of the second reaction medium chamber 202 extends into the first reaction medium chamber 201 and is height-adjustable; a lower radio frequency antenna 203a located inside the first shielding cover 20 and distributed on the side of the first reaction medium chamber 201; an upper radio frequency antenna 203b located inside the second shielding cover 21 and distributed on the side of the second reaction medium chamber 202; the radio frequency power fed into the upper radio frequency antenna 203b and the radio frequency power fed into the lower radio frequency antenna 203a are respectively adjustable.

[0041] The inductively coupled plasma source also includes: a first shielding cover 20; the first shielding cover 20 is located outside the first reaction medium chamber 201 and the lower radio frequency antenna 203a, and the first shielding cover 20 is used to perform radio frequency shielding on the first reaction medium chamber 201 and the lower radio frequency antenna 203a; a second shielding cover 21, the second shielding cover 21 is located outside the second reaction medium chamber 202 and the upper radio frequency antenna 203b, and the second shielding cover 21 is used to perform radio frequency shielding on the second reaction medium chamber 202 and the upper radio frequency antenna 203b.

[0042] The lateral dimension of the first shielding cover 20 is greater than that of the second shielding cover 21. The second shielding cover 21 is located above the middle area of ​​the first shielding cover 20, and the side wall of the second shielding cover 21 contacts the top surface of the first shielding cover 20. The bottom of the first shielding cover 20 and the second shielding cover 21 are connected.

[0043] The transverse dimension of the first reaction medium chamber 201 is greater than the transverse dimension of the second reaction medium chamber 202. The first reaction medium chamber 201 is located above the middle area of ​​the second reaction medium chamber 202. The bottom of the second reaction medium chamber 202 and the top middle area of ​​the first reaction medium chamber 201 are connected.

[0044] The bottom of the side wall of the second reaction medium chamber 202 extends into the first reaction medium chamber 201, so two relatively independent counter-ion generating chambers can be formed by the part of the second reaction medium chamber 202 side wall extending into the first reaction medium chamber 201. The two relatively independent counter-ion generating chambers are isolated to a certain extent by the side wall of the second reaction medium chamber 202 extending into the first reaction medium chamber 201.

[0045] In this embodiment, the upper RF antenna 203b is in the shape of a coil of incense, and the lower RF antenna 203a is in the shape of a coil of incense.

[0046] The upper RF antenna 203b and the lower RF antenna 203a are separate.

[0047] The upper RF antenna 203 b surrounds the side of the second reaction medium chamber 202 and has a plurality of continuous turns of coils, and the distance between each turn of the coil and the second reaction medium chamber 202 is equal.

[0048] In this embodiment, the lower RF antenna 203 a surrounds the side of the first reaction medium chamber 201 and has a plurality of continuous turns of coils, and the distance between each turn of the coil and the first reaction medium chamber 201 is equal.

[0049] In this embodiment, the second reaction medium chamber 202 further includes a supporting portion 202a, which is fixed to the side wall of the second reaction medium chamber 202 and extends outward from the side wall of the second reaction medium chamber 202. The supporting portion 202a is located between the top end and the bottom end of the side wall of the second reaction medium chamber 202.

[0050] The supporting portion 202 a may be integrally formed with the side wall of the second reaction medium chamber 202 , or the supporting portion 202 a may be bonded and fixed to the side wall of the second reaction medium chamber 202 .

[0051] The side wall of the first reaction medium chamber 201 is in contact with the top side wall of the second reaction medium chamber 202 .

[0052] In this embodiment, the inductively coupled plasma source further includes a sealing member 204 , and the sealing member 204 is located between the carrying portion 202 a and the top surface of the first reaction medium chamber 201 .

[0053] The inductively coupled plasma source also includes: a first gas inlet channel 205a that passes through the top wall of the first reaction medium chamber 201, and the first gas inlet channel 205a is suitable for passing the etching gas for etching the wafer into the first reaction medium chamber 201; a second gas inlet channel 205b located at the top of the second reaction medium chamber 202, and the second gas inlet channel 205b is suitable for passing the etching gas for etching the wafer into the second reaction medium chamber 202.

[0054] The lower RF antenna 203a has a first antenna terminal 2031 and a second antenna terminal 2032, and the upper RF antenna 203b has a third antenna terminal 2033 and a fourth antenna terminal 2034; the first antenna terminal 2031 is suitable for feeding the first RF, and the third antenna terminal 2033 is suitable for feeding the second RF, and the sizes of the first RF and the second RF are adjustable.

[0055] The inductively coupled plasma source also includes: a radio frequency source 206; a radio frequency matcher 207, one end of which is connected to the radio frequency source 206; a first power divider 208a, one end of which is connected to the other end of the radio frequency matcher 207, and the other end of which is connected to the first antenna terminal 2031; a second power divider 208b, one end of which is connected to the other end of the radio frequency matcher 207, and the other end of which is connected to the third antenna terminal 2033; a first voltage balancing capacitor 209a, one end of which is connected to the second antenna terminal 2032, and the other end of which is grounded; and a second voltage balancing capacitor 209b, one end of which is connected to the fourth antenna terminal 2034, and the other end of which is grounded.

[0056] The first voltage balancing capacitor 209a functions as follows: maintaining a certain voltage at the second antenna terminal 2032, reducing the voltage difference between the first antenna terminal 2031 and the second antenna terminal 2032, and reducing the collision of plasma with the side wall of the first reaction medium chamber 201.

[0057] The second voltage balancing capacitor 209 b has the following functions: maintaining a certain voltage at the fourth antenna terminal 2034 , making the voltage difference between the fourth antenna terminal 2034 and the third antenna terminal 2033 smaller, and reducing the collision of plasma with the side wall of the second reaction medium chamber 202 .

[0058] In this embodiment, it also includes: a wafer clamping platform 101 located in the reaction chamber body 10 and below the first reaction medium chamber 201 .

[0059] In this embodiment, the lower RF antenna 203 a is used to generate plasma in the first reaction medium chamber 201 , and the upper RF antenna 203 b is used to generate plasma in the second reaction medium chamber 201 .

[0060] The inductively coupled reactor further includes a radio frequency isolation ring 102 located on a side of the wafer clamping platform 101 .

[0061] The inductively coupled reactor further includes a plasma confinement ring 103 located on the side of the wafer clamping platform 101 , the plasma confinement ring 103 is located outside the RF isolation ring 102 , and the plasma confinement ring 103 is located at the bottom of the first reaction medium chamber 201 .

[0062] The inductively coupled reactor also includes: a first cooling device 2010, the first cooling device 2010 is located on the top of the first shielding cover 20, and the first cooling device 2010 is used to cool the lower RF antenna 203a and the first reaction medium chamber 201; a second cooling device 2011, the second cooling device 2011 is located on the top of the second shielding cover 21, and the second cooling device 21 is used to cool the upper RF antenna 203b and the second reaction medium chamber 202.

[0063] Figure 2The inductively coupled reactor has a working principle of: two relatively independent counter ion generating chambers can be formed by extending the side wall of the second reaction medium chamber 202 into the first reaction medium chamber 201. The RF power fed into the lower RF antenna 203a is adjusted so that the density distribution of the plasma generated inside the first reaction medium chamber 201 is adjustable. The RF power fed into the upper RF antenna 203b is adjusted so that the density distribution of the plasma generated inside the second reaction medium chamber 202 is adjustable. The RF power provided by the RF source 206 is fed into the lower RF antenna 203a and the upper RF antenna 203b through the RF matcher 207. The RF power fed into the lower RF antenna 203a is controlled and adjusted by the first power divider 208a, and the RF power fed into the upper RF antenna 203b is controlled and adjusted by the second power divider 208b. The control of the RF power fed into the lower RF antenna 203a by the first power divider 208a is independent of the control of the RF power fed into the upper RF antenna 203b by the second power divider 208b. The voltage of the second antenna terminal 2032 of the lower RF antenna 203a is distributed and controlled by the first voltage balancing capacitor 209a. The voltage of the fourth antenna terminal 2034 of the upper RF antenna 203b is The voltage is distributed and controlled by the second voltage balancing capacitor 209b. The RF in the coil of the lower RF antenna 203a generates an alternating magnetic field H1 perpendicular to the current plane in the first reaction medium chamber 201. The RF current in the coil of the upper RF antenna 203b generates an alternating magnetic field H2 perpendicular to the current plane in the second reaction medium chamber 202. The alternating magnetic field H1 induces an angular electric field E1 parallel to the direction of the coil current in the first reaction medium chamber 201. The alternating magnetic field H2 induces an angular electric field E2 parallel to the direction of the coil current in the second reaction medium chamber 202. The reaction gas introduced into the first reaction medium chamber 201 generates plasma under the action of the angular electric field E1. The reaction gas introduced into the second reaction medium chamber 202 generates plasma under the action of the angular electric field E2. The density of the plasma generated in the first reaction medium chamber 201 is controlled by the magnitude of the RF power of the lower RF antenna 203a, and the density of the plasma generated in the second reaction medium chamber 202 is controlled by the magnitude of the RF power of the upper RF antenna 203b.

[0064] The present invention also provides a working method of an inductively coupled reactor, using the above-mentioned inductively coupled reactor, please refer to Figure 3 , including the following steps:

[0065] S01: placing a wafer in the reaction chamber body 10;

[0066] S02: adjusting the radio frequency power fed into the upper radio frequency antenna 203b and the radio frequency power fed into the lower radio frequency antenna 203a;

[0067] S03: After adjusting the RF power fed into the upper RF antenna 203b and the RF power fed into the lower RF antenna 203a, the lower RF antenna 203a generates plasma inside the first reaction medium chamber 201, and the upper RF antenna 203b generates plasma inside the second reaction medium chamber 202.

[0068] Specifically, the wafer is placed on the wafer clamping plate 101, and the first power distributor 208a is used to adjust the RF power fed into the lower RF antenna 203a, and the second power distributor 208b is used to adjust the RF power fed into the upper RF antenna 203b.

[0069] The working method of the inductively coupled reactor further includes: adjusting the type and flow rate of the gas in the first gas inlet channel 205a and the type and flow rate of the gas in the second gas inlet channel 205b.

[0070] The gas in the first air inlet channel 205a and the gas in the second air inlet channel 205b can be adjusted independently, thereby realizing independent control of the plasma density in two relatively independent counter-ion generating chambers. Therefore, the plasma density inside the first reaction medium chamber 201 is controlled by controlling the type and flow rate of the gas in the first air inlet channel 205a, and the plasma density inside the second reaction medium chamber 202 is controlled by controlling the type and flow rate of the gas in the second air inlet channel 205b.

[0071] Another embodiment of the present invention provides an inductively coupled reactor, referring to Figure 4 The difference between the inductively coupled reactor in this embodiment and the inductively coupled reactor in the previous embodiment is that the inductively coupled ion source further includes: a height control component located between the supporting portion and the top surface of the first reaction medium chamber, and the height control component is suitable for controlling the longitudinal distance between the top surfaces of the second reaction medium chamber and the first reaction medium chamber.

[0072] In this embodiment, the height control component is a dielectric ring 2043, and the thickness of the dielectric ring 2043 is adjustable.

[0073] The seal of the inductively coupled plasma source includes: a first seal 2041 and a second seal 2042 , wherein the first seal 2041 is located between the dielectric ring 2043 and the top surface of the first reaction medium chamber 201 , and the second seal 2042 is located between the dielectric ring 2043 and the bearing portion 202 a .

[0074] The same contents in this embodiment as those in the previous embodiment will not be described in detail.

[0075] The difference between the working method of the inductively coupled reactor in this embodiment and the working method in the previous embodiment is that it also includes: using the height control component to control the position of the first reaction medium chamber 201 relative to the second reaction medium chamber 202.

[0076] It should be noted that the three adjustments, namely, the adjustment of the gas in the first air inlet channel and the second air inlet channel, the control of the position of the first reaction medium chamber 201 relative to the second reaction medium chamber 202 by the medium ring 2043, and the adjustment of the RF power fed into the upper RF antenna 203b and the RF power fed into the lower RF antenna 203a, can be used in combination.

[0077] Another embodiment of the present invention further provides an inductively coupled reactor, please refer to Figure 5 The difference between the inductively coupled reactor in this embodiment and the inductively coupled reactor in the previous embodiment is that the height control component is a spring 2044 .

[0078] The same contents in this embodiment as those in the previous embodiment will not be described in detail.

[0079] The working method of the inductively coupled reactor in this embodiment refers to the working method in the previous embodiment.

[0080] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. An inductively coupled reactor, characterized in that: include: Reaction chamber body; an inductively coupled plasma source located above the reaction chamber body; The inductively coupled plasma source comprises: a first reaction medium chamber; a second reaction medium chamber located above the first reaction medium chamber, the bottom of the second reaction medium chamber and the middle area of ​​the top of the first reaction medium chamber are connected, the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber and the height is adjustable; a lower radio frequency antenna located at the side of the first reaction medium chamber; an upper radio frequency antenna located at the side of the second reaction medium chamber, the upper radio frequency antenna and the lower radio frequency antenna are separate; the radio frequency power fed into the upper radio frequency antenna and the radio frequency power fed into the lower radio frequency antenna are respectively adjustable; The first reaction medium chamber and the second reaction medium chamber include a first plasma generating chamber and a second plasma generating chamber, and a portion of the second reaction medium chamber sidewall extending into the first reaction medium chamber is located between the first plasma generating chamber and the second plasma generating chamber; The second reaction medium chamber further includes a bearing portion, the bearing portion is fixed to the side wall of the second reaction medium chamber and extends outward of the side wall of the second reaction medium chamber, and the bearing portion is located between the top end and the bottom end of the side wall of the second reaction medium chamber; The inductively coupled plasma source further includes: a sealing member, the sealing member being located between the carrier and a top surface of the first reaction medium chamber; The inductively coupled plasma source further includes a height control component located between the carrier and the top surface of the first reaction medium chamber, wherein the height control component is adapted to control a longitudinal distance between the second reaction medium chamber and the top surface of the first reaction medium chamber.

2. The inductively coupled reactor according to claim 1, characterized in that: The height control component is a dielectric ring, and the thickness of the dielectric ring is adjustable.

3. The inductively coupled reactor according to claim 2, characterized in that: The inductively coupled plasma source further includes: a first seal located between the dielectric ring and the top surface of the first reaction medium chamber; and a second seal located between the dielectric ring and the bearing portion.

4. The inductively coupled reactor according to claim 1, characterized in that: The height control component is a spring.

5. The inductively coupled reactor according to claim 1, characterized in that: The inductively coupled plasma source also includes: a first gas inlet channel penetrating the top wall of the first reaction medium chamber, the first gas inlet channel being suitable for introducing etching gas for etching wafers into the first reaction medium chamber; and a second gas inlet channel located at the top of the second reaction medium chamber, the second gas inlet channel being suitable for introducing etching gas for etching wafers into the second reaction medium chamber.

6. The inductively coupled reactor according to claim 5, characterized in that: The gas in the first air inlet channel and the gas in the second air inlet channel can be adjusted independently and the gas flow rates can be adjusted independently.

7. The inductively coupled reactor according to claim 1, characterized in that: The lower radio frequency antenna has a first antenna terminal and a second antenna terminal, and the upper radio frequency antenna has a third antenna terminal and a fourth antenna terminal; The first antenna terminal is suitable for feeding a first radio frequency, and the third antenna terminal is suitable for feeding a second radio frequency. The magnitudes of the first radio frequency and the second radio frequency are adjustable.

8. The inductively coupled reactor according to claim 7, characterized in that: The inductively coupled plasma source also includes: a radio frequency source; a radio frequency matcher, one end of which is connected to the radio frequency source; a first power divider, one end of which is connected to the other end of the radio frequency matcher, and the other end of which is connected to the first antenna terminal; a second power divider, one end of which is connected to the other end of the radio frequency matcher, and the other end of which is connected to the third antenna terminal; a first voltage balancing capacitor, one end of which is connected to the second antenna terminal, and the other end of which is grounded; and a second voltage balancing capacitor, one end of which is connected to the fourth antenna terminal, and the other end of which is grounded.

9. The inductively coupled reactor according to claim 1, characterized in that: Also includes: A wafer clamping platform is located in the reaction chamber body and below the first reaction medium chamber.

10. The inductively coupled reactor according to claim 9, characterized in that: Also includes: A radio frequency isolation ring located on a side of the wafer clamping platform; A plasma confinement ring is located outside the radio frequency isolation ring.

11. The inductively coupled reactor according to claim 1, characterized in that: Also includes: a first shielding cover, the first shielding cover is located outside the first reaction medium chamber and the lower RF antenna, and the first shielding cover is used to perform RF shielding on the first reaction medium chamber and the lower RF antenna; a second shielding cover, the second shielding cover is located outside the second reaction medium chamber and the upper RF antenna, and the second shielding cover is used to perform RF shielding on the second reaction medium chamber and the upper RF antenna.

12. The inductively coupled reactor according to claim 11, characterized in that: Also includes: a first cooling device, the first cooling device being located on the top of the first shielding cover, and the first cooling device being used to cool the lower radio frequency antenna and the first reaction medium chamber; A second cooling device is located on the top of the second shielding cover, and the second cooling device is used to cool the upper radio frequency antenna and the second reaction medium chamber.

13. A method for operating an inductively coupled reactor, using the inductively coupled reactor according to any one of claims 1 to 12, characterized in that: include: placing a wafer in the reaction chamber body; Adjusting the radio frequency power fed into the upper radio frequency antenna and the radio frequency power fed into the lower radio frequency antenna; After adjusting the RF power fed into the upper RF antenna and the RF power fed into the lower RF antenna, the lower RF antenna generates plasma inside the first reaction medium chamber, and the upper RF antenna generates plasma inside the second reaction medium chamber; The inductively coupled plasma source further includes: a height control component located between the carrier and the top surface of the first reaction medium chamber; The working method further comprises: using the height control component to control the position of the first reaction medium chamber relative to the second reaction medium chamber.

14. The operating method of the inductively coupled reactor according to claim 13, characterized in that: The inductively coupled plasma source further comprises: a first gas inlet channel penetrating the top wall of the first reaction medium chamber, the first gas inlet channel being suitable for introducing etching gas for etching wafers into the first reaction medium chamber; a second gas inlet channel located at the top of the second reaction medium chamber, the second gas inlet channel being suitable for introducing etching gas for etching wafers into the second reaction medium chamber; The working method further includes: adjusting the gas type and flow rate in the first air intake passage and the gas type and flow rate in the second air intake passage.

15. The operating method of the inductively coupled reactor according to claim 13, characterized in that: The lower radio frequency antenna has a first antenna terminal and a second antenna terminal, and the upper radio frequency antenna has a third antenna terminal and a fourth antenna terminal; The first antenna terminal is suitable for feeding a first radio frequency, and the third antenna terminal is suitable for feeding a second radio frequency, and the magnitudes of the first radio frequency and the second radio frequency are adjustable; The inductively coupled plasma source further includes: a radio frequency source; a radio frequency matcher, one end of which is connected to the radio frequency source; a first power divider, one end of which is connected to the other end of the radio frequency matcher, and the other end of which is connected to the first antenna terminal; a second power divider, one end of which is connected to the other end of the radio frequency matcher, and the other end of which is connected to the third antenna terminal; a first voltage balancing capacitor, one end of which is connected to the second antenna terminal, and the other end of which is grounded; a second voltage balancing capacitor, one end of which is connected to the fourth antenna terminal, and the other end of which is grounded; Adjusting the RF power fed into the upper RF antenna and the RF power fed into the lower RF antenna includes: using a first power divider to adjust the RF power fed into the lower RF antenna, and using a second power divider to adjust the RF power fed into the upper RF antenna.

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