Substrate processing device and substrate processing method using the same

Abstract

The present invention relates to a substrate processing device and a substrate processing method using the same, and more particularly, to a substrate processing device for performing substrate processing on a substrate surface using plasma and a substrate processing method using the same. The present invention also discloses a substrate processing device, comprising: a process chamber (100), a gas injection unit (200) and a substrate support unit (300), wherein the process chamber (100) forms a sealed processing space (S), the gas injection unit (200) is arranged on the upper side of the process chamber (100) and injects process gas for substrate processing and chamber cleaning gas (CCG) for cleaning the inside of the process chamber (100), and the substrate support unit (300) is arranged in the process chamber (100) and is equipped with one or more substrates (10).

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method using the same, and more particularly, to a substrate processing device that uses plasma to perform substrate processing on a substrate surface and a substrate processing method using the same. Background Art

[0002] The substrate processing device includes a vacuum chamber forming a sealed internal space and a substrate support portion disposed in the vacuum chamber and mounted with a substrate. The substrate processing device is a device that injects a processing gas into the internal space and applies power to etch or deposit on the surface of the substrate.

[0003] Substrates processed by the substrate processing apparatus include semiconductor wafers, LCD panel glass substrates, solar cell substrates, and the like.

[0004] However, as the number of thin film layers deposited on the substrate increases and high heat is applied to the substrate during substrate processing, the pressure applied to each area on the substrate may vary, resulting in a warpage phenomenon in which the edge position of the substrate mounted on the mounting surface of the substrate support portion is lifted upward.

[0005] Since the substrate is warped on the substrate support, an arc occurs in a space formed between the substrate and the substrate support during a plasma process, which reduces the uniformity of the film thickness (THK uniformity), thereby causing a problem of reducing substrate quality and productivity.

[0006] Even when substrate processing is performed cumulatively on a substrate, an electrostatic chuck is used to clamp the mounted substrate using electrostatic force to prevent substrate warping. However, if an electrostatic chuck is used, a thin film may be formed on the mounting surface of the electrostatic chuck due to residual gas remaining inside the vacuum chamber during the time when the substrate is not mounted on the electrostatic chuck (such as when the substrate is exchanged), thereby weakening the clamping force for the substrate and resulting in a problem in which substrate warping cannot be avoided. Summary of the invention

[0007] (Problem to be solved)

[0008] In order to solve the problems mentioned above, the purpose of the present invention is to provide a substrate processing device and a substrate processing method using the same, which cleans the top of a substrate support part that clamps the substrate using electrostatic force, thereby preventing the substrate from warping due to the reduction of the clamping force due to the thin film formed on the substrate support part.

[0009] (Methods to solve the problem)

[0010] The present invention is proposed to achieve the purpose of the present invention as described above, and discloses a substrate processing device, including: a process chamber 100, a gas injection unit 200 and a substrate support unit 300, wherein the process chamber 100 forms a sealed processing space S, the gas injection unit 200 is arranged on the upper side of the process chamber 100 and injects process gas for substrate processing and chamber cleaning gas CCG for cleaning the inside of the process chamber 100, the substrate support unit 300 is arranged in the process chamber 100 and is installed with more than one substrate 10, and is characterized in that the substrate support unit 300 includes: a base unit 310, on which the substrate 10 is installed; a plurality of protrusions 320, which are formed on the base unit 310 to support the substrate 10; a gas flow channel portion 330, which passes through the base portion 310 to communicate with the space between the base portion 310 and the substrate 10 supported by the plurality of protrusions 320; a surface cleaning gas supply portion, which is connected to the gas flow channel portion 330, to supply a surface cleaning gas SCG through the gas flow channel portion 330 so that the surface cleaning gas SCG flows between the plurality of protrusions 320; the substrate processing apparatus includes a control portion, which controls to supply the surface cleaning gas SCG through the gas flow channel portion 330 between main cleaning processes, wherein the main cleaning process is to clean the interior of the process chamber 100 with the chamber cleaning gas CCG.

[0011] The substrate supporting portion 300 may be an electrostatic chuck in which electrodes are mounted on the base portion 310 to clamp the substrate 10 by electrostatic force.

[0012] The substrate supporting portion 300 may further include a groove 340 formed on the base portion 310 to diffuse at least one of the purge gas PG and the surface cleaning gas CCG supplied through the gas flow channel portion 330 through a space between the base portion 310 and the substrate 10 supported by the protrusion 320 .

[0013] The substrate supporting portion 300 may further include a dam portion 350 formed along a periphery of an upper edge of the base portion 310 and having a height equal to or higher than that of the protruding portion 320 .

[0014] A plurality of gas holes 312 communicating with the gas flow channel portion 330 may be formed on the upper surface of the base portion 310 .

[0015] The gas flow channel portion 330 may be branched from the inside of the substrate supporting portion 300 to be communicated with the plurality of gas holes 312 respectively.

[0016] The substrate supporting portion 300 may further include a purge gas supply portion connected to the gas flow channel portion 330 for supplying a purge gas PG through the gas flow channel portion 330 so that the purge gas PG flows between the plurality of protrusions 320 .

[0017] The control unit may control the purge gas PG to be continuously supplied through the gas flow channel unit 330 during the substrate treating process.

[0018] The substrate processing apparatus may further include a warpage sensing portion for sensing a warpage degree of the substrate 10 clamped by the substrate supporting portion 300 .

[0019] The control unit may control the surface cleaning gas CCG to be supplied through the gas flow channel unit 330 when the warpage degree is greater than a set reference.

[0020] On the other hand, the present invention discloses a substrate processing method, which is performed by a substrate processing device, wherein the substrate processing device includes a process chamber 100, a gas injection unit 200, and a substrate support unit 300, wherein the process chamber 100 forms a sealed processing space S, the gas injection unit 200 is disposed on the upper side of the process chamber 100 and injects a process gas for substrate processing and a chamber cleaning gas CCG for cleaning the inside of the process chamber 100, and the substrate support unit 300 is disposed in the process chamber 100 and is installed with one or more substrates 10,

[0021] The substrate processing method may include: a main cleaning step, which is repeatedly performed at intervals after the substrate processing is performed multiple times, so as to supply a chamber cleaning gas CCG through the gas injection part 200 to clean the entire interior of the process chamber 100; a substrate support part cleaning step, which supplies a surface cleaning gas SCG through the substrate support part 300 to the space between the substrate support part 300 and the substrate 10 supported by the substrate support part 300 to clean the substrate support part 300.

[0022] The substrate support portion cleaning step may be performed between the main cleaning steps or may be performed together with the main cleaning step.

[0023] The substrate supporting portion cleaning step may be performed when a warpage degree of the substrate 10 introduced into the process chamber 100 and clamped by the substrate supporting portion 300 is greater than a preset reference.

[0024] The substrate support cleaning step may include: a virtual substrate introducing step, introducing a virtual substrate into the process chamber 100; a virtual substrate clamping step, clamping the virtual substrate in the substrate support 300; and a cleaning gas supplying step, supplying a surface cleaning gas SCG to the space above the substrate support 300 and between the virtual substrate.

[0025] The cleaning gas supplying step may supply the inert cleaning gas PG together with the surface cleaning gas SCG to the upper surface of the substrate supporting part 300 and the space between the dummy substrates.

[0026] (Effects of the Invention)

[0027] The substrate processing device and the substrate processing method using the same of the present invention clean the substrate support part that clamps the substrate using electrostatic force, thereby having the advantage of preventing the substrate from warping due to the reduction of the clamping force caused by the film formed on the substrate support part.

[0028] In more detail, the present invention supplies surface cleaning gas to the top of the substrate support part and between the substrate through a gas flow channel part formed inside the substrate support part, thereby effectively removing the thin film deposited on the substrate support part. Therefore, it has the advantage of maintaining the clamping force of the substrate support part on the substrate above a predetermined level.

[0029] In addition, the present invention also performs a substrate support cleaning step on the surface of the substrate support between the main cleaning steps of the process chamber, thereby maximizing the use of the cleaning cycle of the main cleaning step, thereby having the advantage of increasing the output of the substrate processing device.

[0030] In addition, the present invention can directly and flexibly utilize the gas flow channel portion and the air holes for the supply of surface cleaning gas. The gas flow channel portion and the air holes supply the cleaning gas to the top of the substrate support portion and between the substrate through the substrate support portion to prevent substrate processing from being performed on the bottom surface of the substrate during substrate processing. Therefore, it has the advantage of being able to obtain a cleaning effect on the substrate support portion without changing the existing equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 2 It is enlarged to show Figure 1 A plan view of a substrate supporting portion of a substrate processing apparatus.

[0033] Figure 3 yes Figure 2 Cross-sectional view in the AA direction.

[0034] Figure 4 It is enlarged to show Figure 3 An enlarged view of a cross section of a portion of .

[0035] Figure 5 It is shown in Figure 1 A graph showing the flow rate of a purge gas flowing between a substrate support and a substrate.

[0036] Figure 6 The graph shows the cycle and required time of the main cleaning and substrate support cleaning performed in the repeated substrate processing process.

[0037] Figure 7 It is shown in Figure 3 FIG. 1 is a diagram showing the flow of a purge gas and a surface cleaning gas flowing along a space between an upper surface of a substrate support and a substrate in a substrate support.

[0038] Figure 8 The flowchart shows a substrate processing method executed by a substrate processing apparatus according to an embodiment of the present invention.

[0039] Fig. 9 It is explained in Figure 8 A flow chart of a substrate support cleaning step for cleaning a substrate support in a substrate processing method.

[0040] (Explanation of Reference Numerals)

[0041] 10: Substrate 100: Process chamber

[0042] 200: Gas injection unit 300: Substrate support unit DETAILED DESCRIPTION

[0043] Hereinafter, a substrate processing apparatus according to the present invention will be described below with reference to the accompanying drawings.

[0044] like Figures 1 to 6 As shown, the substrate processing device of the present invention may include: a process chamber 100 forming a sealed processing space S; a gas injection unit 200 disposed on the upper side of the process chamber 100 to inject gas for substrate processing; and a substrate support unit 300 disposed in the process chamber 100 and mounted with one or more substrates 10.

[0045] Here, the substrate 10 as the substrate processing object may be any substrate as long as it is a substrate that needs to be subjected to processes such as deposition and etching, such as a semiconductor wafer, a glass substrate for a display panel, a substrate for a solar cell, and the like.

[0046] The substrate processing device may perform various substrate processing processes such as deposition and etching; for example, it may be a deposition device such as CVD, ALD, etc., which performs a deposition process such as forming a film on the substrate 10 using plasma.

[0047] The process chamber 100 is a structure for forming a sealed internal space for substrate processing, and may have various structures according to the substrate processing process, such as Figure 1 As shown, the chamber body 110 may include a chamber body 110 and an upper cover 120 , wherein the chamber body 110 is open at the upper side and has one or more gates formed therein, and the upper cover 120 and the chamber body 110 are detachably combined with each other to form a processing space S.

[0048] At this time, at least one of the chamber body 110 and the upper cover 120 of the process chamber 100 may be electrically grounded.

[0049] A gate 111 for the substrate 10 to enter and exit may be formed on one side of the chamber body 110 .

[0050] Then, devices for performing vacuum treatment processes, such as a gas injection unit 200, a substrate support unit 300, an exhaust system, etc., may be provided in the process chamber 100. The gas injection unit 200 receives treatment gas from a gas supply device (not shown) and injects it into the internal space S. The substrate support unit 300 mounts the substrate 10. The exhaust system is used to adjust the pressure in the internal space S and exhaust gas.

[0051] The gas injection part 200 is disposed at the upper side of the processing space S and injects gas for performing substrate processing, and may have various structures according to the type and number of times of injection of gas.

[0052] For example, the gas injection unit 200 may inject a process gas for processing a substrate and a chamber cleaning gas CCG for cleaning the inside of the process chamber 100 .

[0053] On the other hand, the gas injection unit 200 is provided on the upper cover 120 and is insulated from the upper cover 120 by the insulator 121, and RF power can be applied. At this time, the substrate support unit 300 described later may be grounded.

[0054] On the contrary, although not shown, the gas injection part 200 may be electrically grounded together with the upper cover 120 , and in this case, one or two RF power sources may be applied to the substrate support part 300 described later while being insulated from the process chamber 100 .

[0055] The substrate support part 300 is a structure for mounting and supporting one or more substrates 10 , and may have various structures.

[0056] In one embodiment, the substrate supporting portion 300 may include: a base portion 310, on which the substrate 10 is mounted; a plurality of protrusions 320, which are protruded on the base portion 310 to support the substrate 10; a gas flow channel portion 330, which is formed through the base portion 310 to communicate with the space between the base portion 310 and the substrate 10 supported by the plurality of protrusions 320; and a surface cleaning gas supply portion, which is connected to the gas flow channel portion 330 and is used to supply a surface cleaning gas SCG through the gas flow channel portion 330 so that the surface cleaning gas SCG flows between the plurality of protrusions 320.

[0057] The base portion 310 is a structure on which the substrate 10 is mounted, and may have various structures.

[0058] At this time, a heater may be installed in the base portion 310 to heat the mounted substrate 10 at a process temperature, wherein the process temperature depends on the type of substrate processing.

[0059] A shaft portion may be coupled to the lower side of the base portion 310 . The shaft portion passes through the chamber wall of the process chamber 100 and is coupled to a substrate vertical driving portion (not shown) to move up and down.

[0060] At this time, the base portion 310 can rotate around the shaft portion.

[0061] In addition, one or more lifting pins (not shown) are disposed on the base portion 310 so as to be movable up and down. The one or more lifting pins are used to move the substrate 10 up and down, so as to introduce or discharge the substrate 10 .

[0062] The plurality of protrusions 320 are structures protrudingly formed on the base portion 310 to support the substrate 10 , and may have various structures.

[0063] For example, the substrate supporting part 300 may be formed of an electrostatic chuck (ESC) for clamping the substrate 10 by electrostatic force.

[0064] At this time, electrodes may be installed in the base portion 310 for clamping the substrate 10 by electrostatic force, so as to clamp the substrate 10 mounted thereon.

[0065] The electrode is an adsorption electrode for adsorbing and holding the substrate 10 on the base portion 310 by electrostatic force, and may have various structures.

[0066] At this time, the base portion 310 is formed of a ceramic sintered body and may be disposed in the inner space of the process chamber 100 to clamp and hold the substrate 10 by electrostatic force.

[0067] At this time, the plurality of protrusions 320 are made of ceramic material and can be formed by various methods. For example, they can be formed by applying ceramic to the base portion 310 by spraying plasma or the like.

[0068] The plurality of protrusions 320 are formed on the base portion 310 to support the substrate 10 , have various protrusion patterns, and may be formed at intervals set in advance.

[0069] The substrate 10 supported by the plurality of protrusions 320 may form a space through which gas may flow between the bottom surface of the substrate 10 and the top surface of the base portion 310 due to the protrusion pattern.

[0070] In more detail, Figure 2 As shown, the multiple protrusions 320 may include multiple first embossings and multiple second embossings; the multiple first embossings are protruding patterns in the central area formed on the base portion 310 in a cylindrical shape with a first diameter D1 and spaced at a first distance S1, which can support the substrate 10 in the central area of ​​the base portion 310; the multiple second embossings are configured on the base portion 310 to surround the multiple first embossings, and form a cylindrical shape with a second diameter D2 and spaced at a second distance S2, which can support the substrate 10 in the peripheral area of ​​the base portion 310.

[0071] At this time, the second embossing is formed more compactly than the first embossing, so that the three-dimensional spacing width of multiple second embossings can be smaller than the spacing width of multiple first embossings, the first diameter D1 of the first embossing and the second diameter D2 of the second embossing form the same size, and the second spacing S2 of the second embossing can be smaller than the first spacing of the first embossing.

[0072] In more detail, the plurality of first embossments have a first spacing S1 of 19 mm to 20 mm in a central area on the base portion 310 and may be arranged in a triangle or grid shape.

[0073] In addition, the second embossing is formed radially with the center of the base portion 310 as a reference, and is equiangularly arranged at a second pitch S2 of about 5 degrees, and can be arranged in a ring shape surrounding the plurality of first embossings.

[0074] In addition, according to another embodiment of the present invention, in order to make the second embossing more compact than the first embossing, the spacing width of multiple second embossings can be smaller than the spacing width of multiple first embossings, the first spacing S1 of the first embossing and the second spacing S2 of the second embossing can form the same spacing, and the first diameter D1 of the first embossing can also be smaller than the second diameter D2 of the second embossing.

[0075] In more detail, the first embossing forms a cylindrical shape with a first diameter D1 of 2.5 mm to 2.6 mm, and the second embossing forms a cylindrical shape with a second diameter D2 of 2.95 mm to 3.05 mm. Accordingly, the peripheral area can be formed by arranging the plurality of second embossings at a more compact pitch than the plurality of first embossings.

[0076] At this time, preferably, the contact area between the first embossing and the second embossing and the surface of the substrate 10 can be 20% to 24% of the total area of ​​the substrate 10, so as to effectively reduce the contact area between the top of the base portion 310 and the bottom of the substrate 10, thereby preventing the bottom surface of the substrate 10 from being contaminated by pollutants such as particles or residues of process gases.

[0077] The gas flow channel 330 is a flow channel formed through the base portion 310 to communicate with a space between the base portion 310 and the substrate 10 supported by the protrusion 320 , and may have various structures.

[0078] At this time, at least one gas hole 312 communicating with the gas flow channel portion 330 may be formed on the base portion 310 .

[0079] At this time, the air hole 312 may be formed in a region that does not overlap with the protrusion 320 , and preferably formed in a central region of the base portion 310 .

[0080] On the other hand, if a plurality of gas holes 312 are formed on the base portion 310 , the gas flow channel portion 330 may have a branch structure branching from the inside of the substrate support portion 300 or independent flow channel structures corresponding to each gas hole 312 , so as to be connected to the plurality of gas holes 312 respectively.

[0081] The surface cleaning gas supply portion is connected to the gas flow channel portion 330 to supply the surface cleaning gas SCG through the gas flow channel portion 330 so that the surface cleaning gas SCG flows between the plurality of protrusions 320 , and may have various structures.

[0082] The surface cleaning gas SCG supplied to the gas flow channel portion 330 by the surface cleaning gas supply portion can be sprayed from the top of the base portion 310 through the gas holes 312, and the surface cleaning gas SCG sprayed from the gas holes 312 can diffuse between the top of the base portion 310 and the bottom surface of the substrate 10 through the plurality of protrusions 320.

[0083] like Figure 7 As shown, the surface cleaning gas SCG diffused between the upper surface of the base portion 310 and the bottom surface of the substrate 10 may be discharged to the outside through the edge of the substrate 10 .

[0084] Accordingly, the surface cleaning gas SCG injected through the gas holes 312 effectively removes the deposits on the susceptor portion 310 , thereby cleaning the substrate support portion 300 .

[0085] At this time, the substrate supporting portion 300 may further include a purge gas supply portion connected to the gas flow channel portion 330 , and supplying a purge gas PG through the gas flow channel portion 330 so that the purge gas PG flows between the plurality of protrusions 320 .

[0086] The purge gas PG supplied to the gas flow channel portion 330 by the purge gas supply portion may be sprayed from the base portion 310 through the gas holes 312 , and the purge gas PG sprayed from the gas holes 312 may be diffused between the base portion 310 and the bottom surface of the substrate 10 through the plurality of protrusions 320 .

[0087] like Figure 7 As shown, the purge gas PG diffused between the upper surface of the base portion 310 and the bottom surface of the substrate 10 may be discharged to the outside through the edge of the substrate 10 .

[0088] Accordingly, the purge gas PG injected through the gas hole 312 can prevent the process gas from flowing into the space between the upper surface of the susceptor 310 and the lower surface of the substrate 10 , and can prevent the residual process gas from flowing into the space between the upper surface of the susceptor 310 and the lower surface of the substrate 10 to generate particles.

[0089] This can prevent particles from being attached to the bottom surface of the substrate 10 and contaminating the substrate 10 or reduce the electrostatic force of the base portion 310 holding the substrate 10 .

[0090] On the other hand, the purge gas PG and the surface cleaning gas SCG are the same and are injected from the gas holes 312 , but it is of course possible to implement an example in which they are injected through different gas holes 312 .

[0091] In addition, the surface cleaning gas SCG may be supplied in a state of being mixed with an inert carrier gas. If the purge gas PG and the surface cleaning gas SCG are injected together from one gas hole 312 , the purge gas PG may function as a carrier gas for the surface cleaning gas SCG.

[0092] On the other hand, in order to control the supply of the purge gas PG or the surface cleaning gas SCG through the gas hole 312, the substrate support part 300 may also include a purge gas valve and a surface cleaning gas valve, and the purge gas valve is arranged between the gas flow channel part 330 and the purge gas supply part, and the surface cleaning gas valve is arranged between the gas flow channel part 330 and the surface cleaning gas supply part.

[0093] At this time, the substrate processing apparatus may further include a control unit for controlling the supply of the surface cleaning gas SCG through the gas flow channel unit 330 .

[0094] Of course, the control unit may also control the supply of the surface cleaning gas SCG and the purge gas PG together through the gas flow channel unit 330 .

[0095] For example, the control unit controls the opening and closing of the purge gas valve and the surface cleaning gas valve to control the supply of the purge gas PG and the surface cleaning gas SCG injected through the gas holes 312 .

[0096] In more detail, the control unit may control the surface cleaning gas SCG to be supplied through the gas flow channel unit 330 during a main cleaning process in which the chamber cleaning gas CCG is used to clean the inside of the process chamber 100 .

[0097] In order to control the supply of the purge gas PG and the surface cleaning gas SCG through the control part, the substrate processing apparatus may further include a warpage sensing part for sensing a warpage degree of the substrate 10 clamped by the substrate supporting part 300 .

[0098] The warpage sensing portion, which is a sensor for sensing the warpage degree of the substrate 10 clamped by the substrate supporting portion 300 , may have various structures.

[0099] For example, the warping sensing portion serves as a sensor for measuring the clamping force of the substrate supporting portion 300 clamping the substrate 10. If the clamping force measured at the edge area of ​​the substrate 10 is lower than the normal range, it can be determined that the edge of the substrate 10 is warped upward, and the degree of warping of the substrate 10 can be determined based on the measured clamping force.

[0100] If the warping degree exceeds a pre-set reference, the control unit determines that the substrate support unit 300 needs to be cleaned, and thus controls the supply of the surface cleaning gas SCG through the gas flow channel unit 330 .

[0101] The operation of the control unit will be described together with the substrate processing method to be described later.

[0102] On the other hand, the substrate supporting portion 300 may further include a groove 340 formed on the base portion 310 so that at least one of the purge gas PG and the surface cleaning gas SCG supplied through the gas flow channel portion 330 can diffuse through the space between the base portion 310 and the substrate 10 supported by the protrusion 320.

[0103] The groove 340 is a groove formed on the base 310 to effectively control the flow of the purge gas PG or the surface cleaning gas SCG injected through the gas hole 312 and flowing between the top of the base 310 and the bottom of the substrate 10. The groove 340 can be formed in various shapes.

[0104] For example, the groove 340 is formed on the base portion 310 in the shape of a concave flow channel, guiding the purge gas PG or the surface cleaning gas SCG supplied through the air hole 312 to diffuse uniformly from the central area of ​​the base portion 310 to the peripheral area at a predetermined flow rate, so as to prevent the process gas from flowing into between the top of the base portion 310 and the bottom surface of the substrate 10.

[0105] In more detail, Figure 2 As shown, the groove 340 is formed in an arc shape or a ring shape in the central area above the base portion 310, and may include a first central groove 340c, a second central groove 340b and a peripheral groove 340a, the first central groove 340c connects the air hole 312 and the first connecting groove 340d, the second central groove 340b forms a ring shape around the first central groove 340c in the central area above the base portion 310, and the peripheral groove 340a forms a ring shape around the second central groove 340b in the peripheral area above the base portion 310.

[0106] Furthermore, in order to guide the purge gas PG or the surface cleaning gas SCG entering the first center groove 340c from the air hole 312 formed in the center portion of the base portion 310 through the first connecting groove 340d to diffuse radially and uniformly in the direction of the second center groove 340b with the center of the base portion 310 as the reference, the groove 340 may include a plurality of second connecting grooves 340e, and the plurality of second connecting grooves 340e are radially and equiangularly arranged with the center of the base portion 310 as the reference to connect the first center groove 340c and the second center groove 340b.

[0107] For example, the purge gas PG or the surface cleaning gas SCG supplied to the center of the base portion 310 through the air hole 312 diffuses toward the first center groove 340c through the space between the first connecting groove 340d and the first embossing on the base portion 310 at a first flow rate; the purge gas PG or the surface cleaning gas SCG diffused toward the first center groove 340c diffuses toward the second center groove 340b through the space between the second connecting groove 340e and the first embossing on the base portion 310 at a second flow rate; the purge gas PG or the surface cleaning gas SCG diffused toward the second center groove 340b diffuses toward the peripheral groove 340a through the space between the first embossing on the base portion 310 at a third flow rate.

[0108] At this time, for the purge gas PG or the surface cleaning gas SCG, since the first flow rate, the second flow rate and the third flow rate of the groove 340 structure as described above have the same flow value, the purge gas PG or the surface cleaning gas SCG can be guided to diffuse uniformly radially from the central area of ​​the base 310 to the peripheral area at a predetermined flow rate.

[0109] Furthermore, in order to make the purge gas PG or the surface cleaning gas SCG diffuse radially and uniformly with respect to the center of the base portion 310, the interval α of the plurality of second connection grooves 340e radially and equiangularly arranged with respect to the center of the base portion 310 is preferably 30 to 60 degrees.

[0110] In addition, if Figure 4As shown, preferably, the cross-sectional width W of the groove 340 including the first central groove 340c, the second central groove 340b, and the peripheral groove 340a is 2 mm to 4 mm, and the depth H is 50 μm to 100 μm.

[0111] Figure 5 It is shown in Figure 2 and Figure 3 Graph showing the flow rate of a gas (purge gas PG or surface cleaning gas SCG) flowing in a space between the upper surface of the base portion 310 of the substrate supporting portion 300 and the bottom surface of the substrate 10 supported by the protrusion 320 .

[0112] like Figure 5 As shown in (a) and (b), referring to the first design, it is shown that if the gas supplied through the air hole 312 is diffused directly to the peripheral groove 340a of the peripheral area through the connecting channel, the flow rate of the gas flowing from the center of the base part 310 to the peripheral area will deviate greatly due to the position of the base part 310.

[0113] In addition, referring to the third design, if the first center groove 340c and the second center groove 340b are connected by a plurality of second connecting grooves 340e which are radially arranged at equal angles with the center of the base portion 310 as a reference, and the second center groove 340b and the peripheral groove 340a are also connected by a plurality of second connecting grooves 340e which are radially arranged at equal angles with the center of the base portion 310 as a reference, then, as with the first design, the gas flow rate flowing from the center of the base portion 310 to the peripheral area deviates due to the position of the base portion 310.

[0114] However, referring to the second design and the fourth design which are similar to the substrate supporting portion 300 of one embodiment of the present invention, if the first center groove 340c and the second center groove 340b are connected by a plurality of second connecting grooves 340e which are radially arranged at equal angles with the center of the base portion 310 as a reference, and the peripheral groove 340a is not connected with any other connecting grooves, it is shown that the flow rate of the gas flowing from the center of the base portion 310 to the peripheral area is very constant regardless of the position of the base portion 310.

[0115] That is, the present invention supplies the purge gas PG or the surface cleaning gas SCG between the top of the base portion 310 and the bottom surface of the substrate 10 supported by the protrusion 320 through the air hole 312, and forms a groove 340 and a protrusion 320, so as to diffuse the purge gas PG or the surface cleaning gas SCG on the base portion 310 at a predetermined flow rate uniformly to the peripheral area of ​​the base portion 310, thereby preventing the deposition of a metal film in the peripheral area and preventing residual gas from being deposited on the base portion 310 when the substrate is exchanged or between processes.

[0116] Therefore, the uniform and good clamping force of the base portion 310 during the accumulated substrate processing can stably clamp the substrate 10 and prevent arcing on the bottom surface of the substrate 10 due to warpage of the substrate 10, thereby reducing the occurrence of substrate processing defects.

[0117] In addition, the substrate supporting portion 300 may further include a dam portion 350 formed along the periphery of the upper edge of the base portion 310 to have the same height as or a height higher than the protruding portion 320 .

[0118] The dam 350 is a ring-shaped wall surrounding the edge of the base 310. It prevents process gas from flowing into the space between the top of the base 310 and the bottom of the substrate 10 during substrate processing, and guides the purge gas PG or surface cleaning gas SCG supplied to the gas hole 312 to stay in the space between the top of the base 310 and the bottom of the substrate 10.

[0119] Below, refer to Figure 8 and Fig. 9 , a substrate processing method performed by a substrate processing device including the above-mentioned structure is described in detail.

[0120] The substrate processing method may include: a main cleaning step, which is repeatedly performed at intervals to supply a chamber cleaning gas CCG through a gas injection unit 200 to clean the entire interior of a process chamber 100; and a substrate support unit cleaning step, in which a surface cleaning gas SCG is supplied to a space between the substrate support unit 300 and a substrate 10 supported by the substrate support unit 300 through the substrate support unit 300 to clean the substrate support unit 300.

[0121] The main cleaning step is to repeatedly perform substrate processing for multiple times, and then the chamber cleaning gas CCG may be supplied through the gas injection unit 200 to clean the entire interior of the process chamber 100 .

[0122] The chamber cleaning gas CCG is supplied to the process chamber 100 in a state of active species activated by remote plasma or is activated in-situ in the process chamber 100 to clean the entire interior of the process chamber 100 .

[0123] like Figure 6 As shown, the main cleaning step is repeatedly performed at predetermined intervals, and is performed each time the cumulative number of substrates processed reaches a set value. For example, the main cleaning step can be performed once each time 6,000 substrates are processed cumulatively.

[0124] Through the main cleaning step, unnecessary deposition materials deposited on the gas injection part 200 or the inner wall of the chamber and the substrate support part 300 in the process chamber 100 can be removed during the accumulated substrate processing process.

[0125] If the main cleaning step is completed, the substrate processing of the substrate 10 may be performed multiple times.

[0126] In the substrate processing step, the control part may control the gas supply so as to continuously supply the purge gas PG through the gas flow channel part 330 during the substrate processing process.

[0127] The substrate support portion cleaning step may clean the substrate support portion 300 by supplying the surface cleaning gas SCG to a space between the substrate support portion 300 and the substrate 10 supported by the substrate support portion 300 .

[0128] The substrate support cleaning step may be performed between the main cleaning steps or may be performed together with the main cleaning step.

[0129] For example, Figure 6 and Figure 8 As shown, the substrate support portion cleaning step may be performed between the main cleaning steps, or may be performed repeatedly with intervals.

[0130] Figures 6 to 8 An embodiment is shown in which the substrate support portion cleaning step is performed multiple times at intervals between the main cleaning steps, but of course an embodiment in which the substrate support portion cleaning step and the main cleaning step are performed simultaneously can also be implemented.

[0131] The substrate support cleaning step is performed when the warpage of the substrate 10 introduced into the process chamber 100 and clamped by the substrate support 300 is above a set reference or can be performed every time a set cumulative number of substrates are processed (for example, every time 2000 cumulative substrates are processed).

[0132] When the main cleaning step or the substrate support portion cleaning step is not performed, the substrate processing steps for performing substrate processing in the process chamber 100 may be cumulatively and repeatedly performed.

[0133] In the substrate processing step, the control unit can control the operation of the purge gas valve and the clean gas valve so that the purge gas PG is supplied to the space between the base 310 and the substrate 10 through the gas hole 312, thereby not performing substrate processing on the bottom surface of the substrate 10 during substrate processing.

[0134] During the time when the base portion 310 is not installed on the substrate 10, such as when the substrate 10 is exchanged between substrate processing steps, the reactive gas remaining in the process chamber 100 is deposited on the base portion 310. As such substrate processing steps are repeatedly performed, the clamping force of the base portion 310 becomes weaker, and it may be necessary to remove the thin film on the substrate support portion 300 (especially, the base portion 310) and clean it.

[0135] If it is necessary to clean the substrate support portion, for example, when the clamping force of the base portion 310 weakens and the substrate 10 is introduced into the process chamber 100 and the warpage of the substrate 10 clamped by the substrate support portion 300 is above a set reference, the substrate support portion cleaning step can be performed.

[0136] In the substrate support cleaning step, the control unit may control the operation of the purge gas valve and the surface purge gas valve to supply the surface cleaning gas SCG or the surface cleaning gas SCG and the inert purge gas PG to the space between the base 310 and the substrate 10 through the gas holes 312 .

[0137] In more detail, the substrate support part cleaning step may include: a virtual substrate introducing step of introducing a virtual substrate into the process chamber 100; a virtual substrate clamping step of clamping the virtual substrate by the substrate support part 300; and a cleaning gas supplying step of supplying a surface cleaning gas SCG to the space above the substrate support part 300 and between the virtual substrate.

[0138] The dummy substrate structure is the same as the substrate 10 described above, and may be a cleaning substrate used in the substrate support cleaning step.

[0139] That is, the substrate support cleaning step can be performed in a state where the substrate support 300 clamps the dummy substrate 10, so that the surface cleaning gas SCG in the space between the substrate support 300 and the dummy substrate can be effectively diffused from the center of the substrate support 300 to the outer side.

[0140] The purge gas supplying step may supply the inert purge gas PG together with the surface purge gas SCG onto the substrate support part 300 , and more specifically, may supply the purge gas to the space between the upper surface of the susceptor part 310 and the dummy substrate.

[0141] The surface cleaning gas SCG supplied to the space between the base portion 310 and the virtual substrate is discharged to the outside of the process chamber 100 together with the by-products after removing the thin film on the base portion 310, and the virtual substrate is removed from the process chamber 100, thereby completing the substrate support portion cleaning step.

[0142] The substrate support cleaning step only cleans a very small area corresponding to the upper surface of the substrate support 300. Figure 6 As shown, unlike the main cleaning step which takes about a day, sufficient effects can be obtained by performing the cleaning step in a very short time of about 30 minutes.

[0143] In addition to the main cleaning step of cleaning the entire process chamber 100, the present invention performs a substrate support cleaning step of removing the thin film deposited on the substrate support 300 during a short time interval between the main cleaning steps more than once. Therefore, even if the cumulative number of substrate processing times increases, the substrate support 300 can continue to maintain a good clamping force on the substrate 10, thereby having the advantage of preventing substrate warpage that causes arcing or substrate processing defects.

[0144] In addition, the present invention also performs a substrate support cleaning step on the surface of the substrate support 300 between the main cleaning steps of the process chamber 100, thereby maximizing the utilization of the cleaning cycle of performing the main cleaning steps.

[0145] For example, assuming that in the past, main cleaning was performed regularly after substrate processing was repeatedly performed on 400 substrates 10, since the present invention includes a substrate support cleaning step, a sufficient cleaning effect can be obtained even if more than 400 (for example, 600) substrate processing is performed regularly.

[0146] That is, the present invention maximizes the utilization of the main cleaning which takes a long time to execute, thereby improving the throughput of the substrate processing apparatus.

[0147] The above only describes a part of the preferred embodiments that can be implemented by the present invention. It is well known that the scope of the present invention should not be interpreted in a limited manner by the above embodiments. The technical ideas of the present invention described above and its fundamental technical ideas should all be included in the scope of the present invention.

Claims

1. A substrate processing device, include: A process chamber (100), a gas injection unit (200) and a substrate support unit (300), wherein the process chamber (100) forms a sealed processing space (S), the gas injection unit (200) is arranged on the upper side of the process chamber (100) and injects process gas for substrate processing and chamber cleaning gas (CCG) for cleaning the inside of the process chamber (100), and the substrate support unit (300) is arranged in the process chamber (100) and is equipped with one or more substrates (10), characterized in that: The substrate supporting part (300) comprises: A base portion (310) on which the substrate (10) is mounted; A plurality of protrusions (320) protruding from the base portion (310) to support the substrate (10); a gas flow channel portion (330) penetrating the base portion (310) so as to communicate with the space between the base portion (310) and the substrate (10) supported by the plurality of protrusions (320); a surface cleaning gas supply portion connected to the gas flow channel portion (330) for supplying a surface cleaning gas (SCG) through the gas flow channel portion (330) so that the surface cleaning gas (SCG) flows between the plurality of protrusions (320) to remove deposits on the base portion (310); The substrate processing device includes a control unit, which controls to supply the surface cleaning gas (SCG) through the gas flow channel unit (330) between main cleaning processes, wherein the main cleaning process uses the chamber cleaning gas (CCG) to clean the interior of the process chamber (100).

2. The substrate processing device according to claim 1, It is characterized in that The substrate supporting part (300) is an electrostatic chuck in which electrodes are installed on the base part (310) to clamp the substrate (10) by electrostatic force.

3. The substrate processing apparatus according to claim 1, It is characterized in that The substrate supporting part (300) further comprises: A groove (340) is formed on the base portion (310) to diffuse at least one of a purge gas (PG) and a surface cleaning gas (CCG) supplied through the gas flow channel portion (330) through a space between the top of the base portion (310) and the substrate (10) supported by the protrusion (320).

4. The substrate processing apparatus according to claim 1, It is characterized in that The substrate supporting portion (300) further comprises a dam portion (350), wherein the dam portion (350) is formed around the upper edge of the base portion (310) and has a height that is the same as or higher than that of the protruding portion (320).

5. The substrate processing apparatus according to claim 1, It is characterized in that A plurality of air holes (312) communicating with the gas flow channel portion (330) are formed on the upper surface of the base portion (310); The gas flow channel portion (330) branches from the inside of the substrate supporting portion (300) to communicate with the plurality of gas holes (312) respectively.

6. The substrate processing apparatus according to any one of claims 1 to 5, It is characterized in that The substrate supporting portion (300) further comprises a purge gas supply portion, the purge gas supply portion being connected to the gas flow channel portion (330) and being used for supplying a purge gas (PG) through the gas flow channel portion (330) so that the purge gas (PG) flows between the plurality of protrusions (320); The control unit controls to continuously supply the purge gas (PG) through the gas flow channel unit (330) during a substrate treatment process.

7. The substrate processing apparatus according to claim 6, It is characterized in that Also includes: A warping sensing portion, used for sensing the degree of warping of the substrate (10) clamped by the substrate supporting portion (300); The control unit controls to supply the surface cleaning gas (CCG) through the gas flow channel unit (330) when the warpage degree is greater than a set reference.

8. A substrate processing method, performed by a substrate processing device according to any one of claims 1 to 5, the substrate processing device comprising a process chamber (100), a gas injection unit (200) and a substrate support unit (300), the process chamber (100) forming a sealed processing space (S), the gas injection unit (200) being arranged on the upper side of the process chamber (100) and injecting a process gas for substrate processing and a chamber cleaning gas (CCG) for cleaning the interior of the process chamber (100), the substrate support unit (300) being arranged in the process chamber (100) and having one or more substrates (10) installed thereon, It is characterized in that include: A main cleaning step is repeatedly performed at intervals after the substrate processing is performed multiple times, so as to supply a chamber cleaning gas (CCG) through the gas injection part (200) to clean the entire interior of the process chamber (100); The substrate support part cleaning step is to supply a surface cleaning gas (SCG) to a space between the substrate support part (300) and a substrate (10) supported by the substrate support part (300) through the substrate support part (300) to clean the substrate support part (300).

9. The substrate processing method according to claim 8, It is characterized in that The substrate support cleaning step is performed between the main cleaning steps or together with the main cleaning step.

10. The substrate processing method according to claim 8, It is characterized in that The substrate support cleaning step is performed when the warping degree of the substrate (10) introduced into the process chamber (100) and clamped by the substrate support (300) is above a pre-set reference.

11. The substrate processing method according to claim 8, It is characterized in that The substrate support cleaning step comprises: a virtual substrate introducing step, introducing a virtual substrate into the process chamber (100); a virtual substrate clamping step, clamping the virtual substrate on the substrate support (300); and a cleaning gas supplying step, supplying a surface cleaning gas (SCG) to the space above the substrate support (300) and between the virtual substrate.

12. The substrate processing method according to claim 11, It is characterized in that The cleaning gas supplying step supplies an inert cleaning gas (PG) together with the surface cleaning gas (SCG) to the upper surface of the substrate supporting part (300) and the space between the dummy substrate.

Images