High-density integrated dual-band TR components

Abstract

The present invention discloses a high-density integrated dual-band TR component, including a shell, wherein a W-band TR component and a Ku-band TR component are integrated in a dual-band high-density integrated manner; the W-band TR component includes a W-band chip and a W-band power supply and control board, and the W-band chip is connected to the W-band power supply and control board through gold wire bonding; the Ku-band TR component includes a Ku-band chip and a Ku-band power supply and control board, and the Ku-band chip is connected to the Ku-band power supply and control board through a radio frequency microstrip line, and the Ku-band power supply and control board is connected to the W-band power supply and control board through gold wire bonding. The high-density integrated dual-band TR component of the present invention has the advantages of high integration, small system volume, and shared caliber.

Description

Technical Field

[0001] The present invention relates to the field of TR components, and in particular to a high-density integrated dual-frequency TR component. Background Art

[0002] With the development of radar and communication technology, phased array antennas have attracted more and more attention and have been widely used. The TR component is the core component of the phased array antenna, which realizes multi-channel signal transmission from the antenna to the signal processing. The dual-frequency TR component is an indispensable core component in the dual-frequency phased array antenna system.

[0003] Take the Ku and W band dual-band composite TR component as an example. Limited by the characteristics of the phased array antenna, the channel spacing of the TR component cannot be set arbitrarily and is generally very narrow. The difficulty of integrating dual-band TR components lies in integrating TR components of two frequency bands under limited size conditions.

[0004] The mainstream technologies currently used are:

[0005] The mainstream solution currently adopts a structural separation solution. For example, the TR components of the Ku and W bands are integrated separately and placed in different locations. The advantage of this is that there is enough space to integrate the respective TR components. The disadvantage is that the separate TR components result in the respective antennas being placed separately and cannot be designed with the same aperture, which greatly increases the size of the system and is unbearable for the system in many cases. Summary of the invention

[0006] In view of the above problems, the present invention provides a high-density integrated dual-frequency TR component, which has the advantages of high integration, small system volume and shared caliber.

[0007] The technical solution of the present invention is as follows:

[0008] A high-density integrated dual-band TR component comprises a shell, wherein a W-band TR component and a Ku-band TR component are integrated in the shell in a dual-band high-density integrated manner; the W-band TR component comprises a W-band chip and a W-band power supply and control board, and the W-band chip is connected to the W-band power supply and control board through gold wire bonding; the Ku-band TR component comprises a Ku-band chip and a Ku-band power supply and control board, and the Ku-band chip is connected to the Ku-band power supply and control board through a radio frequency microstrip line, and the Ku-band power supply and control board is connected to the W-band power supply and control board through gold wire bonding.

[0009] In a further technical solution, the shell includes an upper shell and a lower shell, the W-band TR component is integrated in the upper shell, and the Ku-band TR component is integrated in the lower shell. The upper shell and the lower shell are connected by interconnecting connectors and screws, which makes connection and disassembly more convenient.

[0010] In a further technical solution, the W-band TR component is a high-density SIP packaged integrated component, including a W-band SIP module, the W-band chip is integrated in the W-band SIP module, and the W-band power supply and control board is arranged on the outside of the W-band SIP module.

[0011] The W-band TR component adopts a high-density SIP packaging integration structure, which can effectively improve the component integration and reduce the integration size.

[0012] In a further technical solution, the Ku-band TR component is a hybrid integrated component with a double-layer structure, the Ku-band chip is located at the bottom layer, and the Ku-band power supply and control board is located at the top layer.

[0013] The Ku-band TR component adopts a double-layer structure design, which can improve its integration and reduce the structure height.

[0014] In a further technical solution, a W-band RF input interface and a W-band RF output interface are provided on the upper shell.

[0015] In a further technical solution, a Ku-band RF input interface and a Ku-band RF output interface are provided on the lower shell.

[0016] The working principle of the above technical solution is as follows:

[0017] The present invention adopts a dual-band high-density integrated integration solution. First, the TR components of the W and Ku frequency bands are designed separately, and each layer of the TR components is designed to be ultra-thin, and then they are combined into one TR component. Among them, the W band adopts a high-density SIP integration solution, and all chips and circuits of the W band are integrated into a SIP package, which improves its integration and reduces the integrated size. All W-band RF chips are integrated in the SIP, and are interconnected with the external power supply and control board through gold wire bonding.

[0018] The Ku-band adopts hybrid integration, dividing the Ku-band chip and the Ku-band power supply and control board into a two-layer design, which can effectively improve its integration and reduce the structural height. The Ku-band chip is located in the lower layer and connected by RF microstrip lines, and the Ku-band power supply and control board is located in the upper layer and connected by gold wire bonding.

[0019] Finally, the TR components of the two frequency bands are assembled using interconnected connectors and structural screws to form a high-density integrated dual-band TR component, which has the advantages of high integration, small system size, and shared aperture. It solves the technical problem that the use of separate TR components in the prior art results in the respective antennas having to be placed separately and cannot be designed with a shared aperture, which greatly increases the size of the system and is unbearable for the system in many cases.

[0020] The beneficial effects of the present invention are:

[0021] 1. The present invention adopts a dual-band high-density integrated solution. First, the TR components of the W and Ku bands are designed separately, and each layer of TR components is designed to be ultra-thin, and then they are combined into one TR component, which has the advantages of high integration, small system volume, and shared caliber;

[0022] 2. The upper shell and the lower shell are connected by interconnecting connectors and screws, making connection and disassembly more convenient;

[0023] 3. The W-band TR components adopt a high-density SIP package integration structure, which can effectively improve the integration of components and reduce the size of the integration;

[0024] 4. The Ku-band TR component adopts a double-layer structure design, which can improve its integration and reduce the structure height. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic structural diagram of a W-band TR component according to an embodiment of the present invention;

[0026] Figure 2 is a schematic diagram of the internal structure of the W-band SIP module according to an embodiment of the present invention;

[0027] Figure 3 It is a schematic diagram of the structure of the TR component of the Ku band described in an embodiment of the present invention.

[0028] Description of reference numerals:

[0029] 10. Shell; 11. W-band SIP module; 111. W-band chip; 12. W-band power supply and control board; 13. W-band RF input interface; 14. W-band RF output interface; 21. Ku-band chip; 22. Ku-band power supply and control board; 23. Ku-band RF input interface; 24. Ku-band RF output interface. DETAILED DESCRIPTION

[0030] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0031] Example:

[0032] like Figure 1-Figure 3As shown, a high-density integrated dual-band TR component includes a shell 10, in which a W-band TR component and a Ku-band TR component are integrated in a dual-band high-density integrated manner; the W-band TR component includes a W-band chip 111 and a W-band power supply and control board 12, and the W-band chip 111 is connected to the W-band power supply and control board 12 through gold wire bonding; the Ku-band TR component includes a Ku-band chip 21 and a Ku-band power supply and control board 22, and the Ku-band chip 21 is connected to the Ku-band power supply and control board 22 through a radio frequency microstrip line, and the Ku-band power supply and control board 22 is connected to the W-band power supply and control board 12 through gold wire bonding.

[0033] In another embodiment, the shell 10 includes an upper shell and a lower shell, the W-band TR component is integrated in the upper shell, and the Ku-band TR component is integrated in the lower shell. The upper shell and the lower shell are connected by interconnecting connectors and screws, which makes connection and disassembly more convenient.

[0034] In another embodiment, if Figure 1 and Figure 2 As shown, the W-band TR component is a high-density SIP packaged integrated component, including a W-band SIP module 11, a W-band chip 111 integrated in the W-band SIP module 11, and a W-band power supply and control board 12 arranged on the outside of the W-band SIP module 11.

[0035] The W-band TR component adopts a high-density SIP packaging integration structure, which can effectively improve the component integration and reduce the integration size.

[0036] In another embodiment, if Figure 3 As shown, the Ku-band TR component is a hybrid integrated component with a double-layer structure, the Ku-band chip 21 is located at the bottom layer, and the Ku-band power supply and control board 22 is located at the top layer.

[0037] The Ku-band TR component adopts a double-layer structure design, which can improve its integration and reduce the structure height.

[0038] In another embodiment, if Figure 1 As shown, a W-band RF input interface 13 and a W-band RF output interface 14 are provided on the upper housing 10 .

[0039] In another embodiment, if Figure 3 As shown, a Ku-band RF input interface 23 and a Ku-band RF output interface 24 are provided on the lower housing 10 .

[0040] The working principle of the above technical solution is as follows:

[0041] The present invention adopts a dual-band high-density integrated integration solution. First, the TR components of the W and Ku frequency bands are designed separately, and each layer of the TR components is designed to be ultra-thin, and then they are combined into one TR component. Among them, the W band adopts a high-density SIP integration solution, and all chips and circuits of the W band are integrated into a SIP package, which improves its integration and reduces the integrated size. All W-band RF chips are integrated in the SIP, and are interconnected with the external power supply and control board through gold wire bonding.

[0042] The Ku-band adopts hybrid integration, dividing the Ku-band chip and the Ku-band power supply and control board into a two-layer design, which can effectively improve its integration and reduce the structural height. The Ku-band chip is located in the lower layer and connected by RF microstrip lines, and the Ku-band power supply and control board is located in the upper layer and connected by gold wire bonding.

[0043] Finally, the TR components of the two frequency bands are assembled using interconnected connectors and structural screws to form a high-density integrated dual-band TR component, which has the advantages of high integration, small system size, and shared aperture. It solves the technical problem that the use of separate TR components in the prior art results in the respective antennas having to be placed separately and cannot be designed with a shared aperture, which greatly increases the size of the system and is unbearable for the system in many cases.

[0044] The above-mentioned embodiments only express the specific implementation of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A high-density integrated dual-band TR component, characterized in that: It comprises a shell, in which a W-band TR component and a Ku-band TR component are integrated in a dual-band high-density integrated manner; the W-band TR component comprises a W-band chip and a W-band power supply and control board, and the W-band chip is connected to the W-band power supply and control board through gold wire bonding; the Ku-band TR component comprises a Ku-band chip and a Ku-band power supply and control board, and the Ku-band chip is connected to the Ku-band power supply and control board through a radio frequency microstrip line, and the Ku-band power supply and control board is connected to the W-band power supply and control board through gold wire bonding.

2. The high-density integrated dual-band TR component according to claim 1, characterized in that: The shell comprises an upper shell and a lower shell, the W-band TR component is integrated in the upper shell, the Ku-band TR component is integrated in the lower shell, and the upper shell and the lower shell are connected by interconnecting connectors and screws.

3. The high-density integrated dual-band TR component according to claim 1, characterized in that: The W-band TR component is a high-density SIP package integrated component, including a W-band SIP module, the W-band chip is integrated in the W-band SIP module, and the W-band power supply and control board is arranged on the outside of the W-band SIP module.

4. The high-density integrated dual-band TR component according to claim 1, characterized in that: The Ku-band TR component is a hybrid integrated component with a double-layer structure, the Ku-band chip is located at the bottom layer, and the Ku-band power supply and control board is located at the top layer.

5. The high-density integrated dual-band TR component according to claim 2, characterized in that: The upper shell is provided with a W-band radio frequency input interface and a W-band radio frequency output interface.

6. The high-density integrated dual-frequency TR component according to claim 2, characterized in that: The lower shell is provided with a Ku-band radio frequency input interface and a Ku-band radio frequency output interface.

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