High-precision four-quadrant source carrier

Abstract

The present invention discloses a high-precision four-quadrant source-carrying device, including a power amplifier pair consisting of an NPN bipolar transistor and a PNP bipolar transistor, and the two bipolar transistors use the same control baseline. The control baseline is connected with a three-stage amplifier circuit, using an NPN transistor 2SC1845 and a PNP transistor 2SA992 as the first-stage power amplifier circuit, using an NPN transistor 2SC4027 and a PNP transistor 2SA1552 as the second and third-stage power amplifier circuits, and using two 1n4148 diodes as modulation diodes of the main control signal. Bidirectional voltage and current output is achieved, and a four-quadrant working mode in which output power and absorption power are combined is achieved; a diode control modulation scheme is used to control the power control tube, and continuous zero-crossing output is achieved; a soft switch control scheme is adopted to achieve reliability and safety of the device.

Description

Technical Field

[0001] The present invention relates to a testing device for energy storage products such as batteries and super capacitors, and in particular to a high-precision four-quadrant source-carrying device. Background Art

[0002] Energy storage products such as batteries and supercapacitors are increasingly used as power supply units in industries such as aerospace and defense, consumer electronics, computers and peripherals, communications, semiconductors, and automotive electronics. Therefore, in the process of research and development, maintenance and support of such products, it is necessary to test not only the charging characteristics, but also the discharge characteristics. Simply measuring steady-state indicators may not be a good way to screen the product, and transient loading tests are also required to evaluate its DC output characteristics. Currently, there is no relevant test equipment that can meet the test requirements.

[0003] At present, it is difficult to find a high-power, four-quadrant power supply and load in one device on the market. The common method is often to use a separate DC power supply to provide the required power, and cooperate with the electronic load to absorb the output power of the device under test for testing its bidirectional renewable energy system and devices. In isolation, the DC power supply can continuously output power, while the electronic load can continuously absorb power, and both have excellent DC accuracy, stability and fast dynamic response. However, using two devices for testing puts higher requirements on the coordination between the devices, and the cost of the test equipment also increases accordingly. At the same time, the test location is not necessarily indoors, and the test equipment is also required to be portable. When the power of a single unit cannot meet the use, it is necessary to connect the power supply and load in parallel to obtain greater power, which also requires the flexible operation of the power supply and load.

[0004] In order to meet the test requirements and realize the design of a four-quadrant source-carrier device, it is necessary to break through the bipolar implementation technology.

[0005] The so-called bipolar realization technology is an output technology that uses the same set of output terminals to continuously output positive and negative voltages or currents through zero without switching the output terminals. This technology breaks through the application mode of traditional power supplies that can only output voltages or currents in the same direction without switching the output terminals. The realization of this technology not only does not require frequent switching of output terminals in applications, but also can restore more complex and real power supply output conditions, so it has very practical significance in applications. To realize this technology, it can no longer be solved by relying solely on the output of a single adjustment tube. Therefore, studying the output technology of a power adjustment tube pair with bidirectional output capability has become the key to technical research.

[0006] Technical solution of inversion technology:

[0007] The so-called polarity reversal technology actually outputs the positive power supply and the negative power supply separately, and switches the output terminal through the relay to connect to the positive power supply or the negative power supply to realize the positive and negative output of the final power supply. When the device needs to output positive voltage or positive current, the controller controls the polarity reversal relay to connect to the output end of the positive power supply; when the device needs to output negative voltage or negative current, the controller controls the polarity reversal relay to connect to the output end of the negative power supply, thereby realizing the change of output direction.

[0008] Disadvantages of the inversion technique:

[0009] 1) The bipolar implementation technology can realize continuous zero-crossing output of positive and negative voltage or current without switching the output terminal. However, the inverted polarity technology can only realize the function of outputting positive and negative voltage or current, but cannot realize continuous zero-crossing output.

[0010] 2) The bipolar implementation technology can provide positive and negative power input to the load, and absorb the positive and negative energy released by the load, that is, it has four-quadrant operation capability and can build a seamless power and load function conversion. However, the reverse polarity technology can only provide positive and negative power input to the load, and cannot absorb the positive and negative energy released by the load, let alone achieve seamless power and load function conversion.

[0011] 3) The bipolar implementation technology uses the soft switching principle, so there are no unreliable factors such as output disconnection and sparking. However, the reverse polarity technology has the risk of switching disconnection, relay sparking and damage, and the reliability is challenged to a certain extent. Summary of the invention

[0012] The object of the present invention is to provide a high-precision four-quadrant source carrier device.

[0013] The objective of the present invention is achieved through the following technical solutions:

[0014] The high-precision four-quadrant source-carrying device of the present invention comprises a power amplifier pair consisting of an NPN bipolar transistor and a PNP bipolar transistor, and the two bipolar transistors use the same control baseline.

[0015] It can be seen from the technical solution provided by the present invention that the high-precision four-quadrant source load device provided by the embodiment of the present invention can achieve continuous zero-crossing output of positive and negative voltages or currents without switching output terminals; it has four-quadrant operation capabilities; it eliminates operation risks and improves the reliability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Schematic diagram of a power output unit circuit in an embodiment of the present invention.

[0017] Figure 2This is a power amplification unit circuit in an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The embodiments of the present invention will be described in further detail below. The contents not described in detail in the embodiments of the present invention belong to the prior art known to those skilled in the art.

[0019] The preferred specific implementation of the high-precision four-quadrant source carrier device of the present invention is:

[0020] The invention comprises a power amplifier pair consisting of an NPN bipolar transistor and a PNP bipolar transistor, and the two bipolar transistors use the same control baseline.

[0021] The NPN bipolar transistor is FJA4310, and the PNP bipolar transistor is FJA4210.

[0022] The control baseline is connected to a multi-stage amplifier circuit, and the amplifier circuit is provided with two modulation diodes.

[0023] The control baseline is connected to a three-stage amplifier circuit, using NPN transistor 2SC1845 and PNP transistor 2SA992 as the first stage power amplifier circuit, using NPN transistor 2SC4027 and PNP transistor 2SA1552 as the second and third stage power amplifier circuits, and using two 1n4148 diodes as modulation diodes of the main control signal.

[0024] The control baseline is provided with a control soft switch.

[0025] The high-precision four-quadrant source-carrying device of the present invention adopts a solution of forming a linear control and power amplifier tube pair with transistors or MOS tubes to realize bidirectional voltage and current output, and realizes a four-quadrant working mode in which output power and absorption power are combined; a diode control modulation scheme is adopted to control the power control tube to realize continuous zero-crossing output; and a soft switch control scheme is adopted to realize the reliability and safety of the device. Specific embodiment:

[0027] like Figure 1 As shown, the function of continuous zero-crossing bipolar adjustment is realized in the form of a power amplifier pair, that is, a NPN bipolar transistor and a PNP bipolar transistor are used to output power, and the two transistors use the same baseline control signal for emitter output. Since the conduction characteristics of the NPN tube and the PNP tube are opposite, the push-pull operation of the two power tubes can be guaranteed. In terms of control, the control baseline of the power pair tube can be controlled to achieve simultaneous control of the conduction state of the two tubes.

[0028] In this unit, the power tube is the core component, so the selection of the power tube should be paid attention to, mainly in the following aspects:

[0029] Since the power tube pair works in the amplification area, it is hoped that the amplification area of ​​the power tube is as large as possible and the DC current gain is as high as possible. Therefore, try to choose power amplifier tube pairs used for power amplification rather than general high-voltage transistors or switching transistors.

[0030] Since two transistors need to be combined into an amplifier pair to work together, in order to achieve performance balance, two tubes with similar performance parameters are selected as a pair. Usually, after selecting an NPN transistor, a matching PNP transistor model recommended in its data sheet or a pair of tubes that have been confirmed to work well in pairs through experiments will be selected.

[0031] When selecting a transistor, you must pay attention to the Vceo (collector-emitter voltage) parameter of the transistor. Usually its value should be at least twice the maximum main power supply voltage, and it is best to leave a certain margin.

[0032] When selecting a transistor, you must pay attention to the Pc (collector power dissipation) parameter of the transistor. Usually, during design, the power consumption of the transistor must not exceed this limit value, and try to choose a transistor with a larger Pc.

[0033] In addition to the above points that require attention, you should also pay attention to whether the transistor's Tj (junction temperature), Ic and other parameters can meet the design requirements.

[0034] like Figure 2 As shown, in order to drive the power transistor pair of the power output unit to output enough power and generate a driving signal pair based on a unified baseline, it is necessary to design a multi-stage amplifier circuit to provide sufficient driving force for the power output unit. According to the current amplification ratio calculation, the number of designed amplification stages is three. At the same time, since the conduction of the bipolar transistor has a positive bias conduction condition of Vbe>0.7V, in order to achieve zero-crossing continuous output at the output end, the baseline control signal needs to be separated by two diodes into a pair of control signal pairs based on the same control baseline to control the two bipolar transistors respectively, so as to avoid a control blind spot near the 0 point, which makes it impossible to achieve zero-crossing output.

[0035] In this unit, the amplifying transistor is the core component, so the selection of the transistor should be paid attention to, mainly in the following aspects:

[0036] Since the power pair tube works in the amplification area, it is hoped that the amplification area of ​​the transistor is as large as possible and the DC current gain is as high as possible. Therefore, try to choose power amplifier pairs for power amplification purposes rather than general high-voltage transistors or switching transistors.

[0037] Since two transistors need to be combined into an amplifier pair to work together, in order to achieve performance balance, two tubes with similar performance parameters are selected as a pair. Usually, after selecting an NPN transistor, a matching PNP transistor model recommended in its data sheet or a pair of tubes that have been confirmed to work well in pairs through experiments will be selected.

[0038] When selecting a transistor, you must pay attention to the Pc (collector power dissipation) parameter of the transistor. Usually, during design, the power consumption of the transistor must not exceed this limit value, and try to choose a transistor with a larger Pc.

[0039] In addition to the above points that require attention, you should also pay attention to whether the transistor's Tj (junction temperature), Ic and other parameters can meet the design requirements.

[0040] The invention uses NPN transistor FJA4310 and PNP transistor FJA4210 to form a power transistor pair to control output and absorption, uses NPN transistor 2SC1845 and PNP transistor 2SA992 as the first stage power amplifier, uses NPN transistor 2SC4027 and PNP transistor 2SA1552 as the second and third stage power amplifiers, and amplifies the output or absorbed power step by step. Two 1n4148 diodes are used as modulation devices for the main control signal, and finally a high-precision source load device that can work in four quadrants is realized.

[0041] Beneficial effects of the present invention:

[0042] 1) The invention uses an NPN transistor and a PNP transistor to form a transistor pair for push-pull output. When the device outputs a positive voltage or a positive current, the NPN transistor is used as the main control element, and when the device outputs a negative voltage or a negative current, the PNP transistor is used as the main control element. In addition, its control line is modulated using two diodes, which effectively offsets the turn-on voltage of the transistor, eliminates the blind spot of transistor control, and makes the control range of the NPN transistor and the PNP transistor continuous, thereby realizing a bidirectional voltage and current output that can continuously cross zero.

[0043] 2) The invention uses a push-pull output scheme of a transistor pair to not only realize bidirectional voltage and current output (first and third quadrant operation), but also can modulate the control line and utilize PNP transistors to control and absorb the power input to the terminals so that it is consumed on the tube, thereby realizing a power absorption device similar to an energy-consuming electronic load (second and fourth quadrant operation).

[0044] 3) The invention uses transistors as the core control device and adopts the form of soft switching to control the output, which effectively avoids unsafe factors such as circuit breaking and sparking of traditional relays, and realizes the safety and reliability of the system.

[0045] In specific implementation, solid-state relays can be used to control the output voltage and current, or MOS tubes or IGBTs can be used to control the output voltage and current. In practical applications, four-quadrant control can be achieved, but the fundamental principle is basically the same as this solution.

[0046] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A high-precision four-quadrant source carrier device, characterized in that: The invention comprises a power amplifier pair consisting of an NPN bipolar transistor and a PNP bipolar transistor, wherein the two bipolar transistors use the same control baseline; The NPN bipolar transistor is FJA4310, and the PNP bipolar transistor is FJA4210; The control baseline is connected to a multi-stage amplifier circuit, and the amplifier circuit is provided with two modulation diodes; The control baseline is connected to a three-stage amplifier circuit, using an NPN transistor 2SC1845 and a PNP transistor 2SA992 as the first-stage power amplifier circuit, an NPN transistor 2SC4027 and a PNP transistor 2SA1552 as the second and third-stage power amplifier circuits, and two 1n4148 diodes as modulation diodes of the main control signal; The control baseline is provided with a control soft switch.

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