A magnetoresistive module and a magnetic sensor

Abstract

The present invention relates to a magnetoresistive module and a magnetic sensor. A first magnetoresistor and a second magnetoresistor are provided in both a first resistance region and a second resistance region. One end of the first magnetoresistor in the first resistance region is connected to one end of the first magnetoresistor in the second resistance region, and one end of the second magnetoresistor in the first resistance region is connected to one end of the second magnetoresistor in the second resistance region. Two pads are provided in both a first pad region and a second pad region. One pad in the second pad region is connected to the other end of the first magnetoresistor in the first resistance region, one pad in the first pad region is connected to the other end of the first magnetoresistor in the second resistance region, the other pad in the second pad region is connected to the other end of the second magnetoresistor in the first resistance region, and the other pad in the first pad region is connected to the other end of the second magnetoresistor in the second resistance region. This makes the layout of the entire magnetoresistive module more compact, and can fully reduce the space occupation and shrink the volume and size of the magnetoresistive module under the condition of having the same performance.

Description

Technical Field

[0001] The present invention relates to the field of electromagnetic technology, and particularly to a magnetoresistive module and a magnetic sensor. Background Art

[0002] The application of magnetoresistance is very extensive. When applied to a magnetic sensor, the magnetoresistance is generally applied in a half-bridge or full-bridge manner.

[0003] In practical applications, the magnetoresistive module used in a magnetic sensor is generally used in the form of a half-bridge or full-bridge. In the half-bridge / full-bridge design, each bridge arm includes a plurality of magnetic tunnel junction (MTJ) elements connected in series and / or in parallel. In the prior art, for a magnetoresistive module with the same performance, the size of the magnetoresistive module is relatively large due to the unreasonable arrangement of the magnetic tunnel junction elements. Summary of the Invention

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defect that the size of a magnetoresistive module with the same performance is relatively large in the prior art, and thus provide a magnetoresistive module, comprising:

[0005] A first resistance region and a second resistance region located diagonally, wherein a first magnetoresistance and a second magnetoresistance are provided in both the first resistance region and the second resistance region. One end of the first magnetoresistance in the first resistance region is connected to one end of the first magnetoresistance in the second resistance region, and one end of the second magnetoresistance in the first resistance region is connected to one end of the second magnetoresistance in the second resistance region;

[0006] A first pad region and a second pad region located diagonally, wherein two pads are provided in both the first pad region and the second pad region. One of the pads in the second pad region is connected to the other end of the first magnetoresistance in the first resistance region, one of the pads in the first pad region is connected to the other end of the first magnetoresistance in the second resistance region, the other pad in the second pad region is connected to the other end of the second magnetoresistance in the first resistance region, and the other pad in the first pad region is connected to the other end of the second magnetoresistance in the second resistance region.

[0007] Preferably, the first resistance region and the first pad region are arranged side by side horizontally, and the first resistance region and the second pad region are arranged side by side vertically;

[0008] The second resistance region and the first pad region are arranged side by side vertically, and the second resistance region and the second pad region are arranged side by side horizontally.

[0009] Preferably, the first resistance region, the first pad region, the second resistance region and the second pad region are distributed in a "field" shape, and the projections of the first resistance region and the second resistance region in the horizontal and vertical directions do not overlap.

[0010] Preferably, the number of magneto - tunnel junction elements included in the first magnetoresistance is equal to the number of magneto - tunnel junction elements included in the second magnetoresistance. A plurality of magneto - tunnel junction elements in the first magnetoresistance correspond one - to - one with a plurality of magneto - tunnel junction elements in the second magnetoresistance, and the corresponding magneto - tunnel junction elements are adjacent in position.

[0011] Preferably, the number of magneto - tunnel junction elements of the first magnetoresistance in the first resistance region is equal to the number of magneto - tunnel junction elements of the second magnetoresistance in the first resistance region, and the number of magneto - tunnel junction elements of the first magnetoresistance in the second resistance region is equal to the number of magneto - tunnel junction elements of the second magnetoresistance in the second resistance region.

[0012] Preferably, the magneto - tunnel junction elements included in the first magnetoresistance are arranged in columns in the first resistance region and the second resistance region, and the magneto - tunnel junction elements included in the second magnetoresistance are arranged in columns in the first resistance region and the second resistance region;

[0013] The number of columns of magneto - tunnel junction elements included in the first magnetoresistance is equal to the number of columns of magneto - tunnel junction elements included in the second magnetoresistance.

[0014] Preferably, the magneto - tunnel junction elements included in the first magnetoresistance are connected in series through an upper wire layer and a lower wire layer and are connected to one pad in the second pad region and one pad in the first pad region; the magneto - tunnel junction elements included in the second magnetoresistance are connected in series through an upper wire layer and a lower wire layer and are connected to the other pad in the second pad region and the other pad in the first pad region.

[0015] Preferably, the wires for connecting the first magnetoresistance in the first resistance region to the first magnetoresistance in the second resistance region and the wires for connecting the second magnetoresistance in the first resistance region to the second magnetoresistance in the second resistance region are both arranged at the junction position of the first resistance region and the second resistance region.

[0016] Preferably, the shape of the magneto - tunnel junction element is rectangular or oval.

[0017] The present invention also provides a magnetic sensor, including the above - mentioned magnetoresistance module.

[0018] The technical solution of the present invention has the following advantages:

[0019] 1. In the magnetoresistance module provided by the present invention, the first resistance region and the second resistance region in the magnetoresistance module are located diagonally, and the first pad region and the second pad region are located diagonally, making the layout of the entire magnetoresistance module more compact, fully utilizing the wafer space, so that under the condition of the same performance, the space occupation can be fully reduced, and the volume and size of the magnetoresistance module can be reduced.

[0020] 2. In the magnetic sensor provided by the present invention, the resistance values of the corresponding bridge arms in the bridge module are very close or even equal, thereby improving the performance of the bridge module to achieve its use value and ensuring that the performance of the sensor is not reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0022] Figure 1 Structural schematic diagram of the magnetoresistive module of the present invention;

[0023] Figure 2 is Figure 1 Structural schematic diagram after removing the wire in;

[0024] Figure 3 Enlarged connection diagram of the magnetic tunnel junction element and the wire in the magnetoresistive module of the present invention;

[0025] Figure 4 is Figure 1 Structural schematic diagram after removing the magnetic tunnel junction element and the upper wire layer in;

[0026] Figure 5 is Figure 1 Structural schematic diagram after removing the magnetic tunnel junction element and the lower wire layer in;

[0027] Figure 6 Current flow diagram in the lower wire layer, magnetic tunnel junction element and upper wire layer in the magnetoresistive module of the present invention;

[0028] Figure 7 Structural schematic diagram of the magnetoresistive module of the present invention applied to the bridge module.

[0029] Reference numerals:

[0030] 101, first magnetoresistance; 102, second magnetoresistance; 103, first pad; 104, second pad; 105, third pad; 106, fourth pad; 201, magnetic tunnel junction element; 202, lower wire layer; 203, upper wire layer; 301, ground terminal; 302, power supply terminal; 303, first output terminal; 304, second output terminal; 305, first bridge arm; 306, second bridge arm; 307, third bridge arm; 308, fourth bridge arm; 309, first magnetization direction; 310, second magnetization direction. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0031] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0032] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0033] In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, the terms "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can also be the communication inside two elements. It can be a wireless connection or a wired connection. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0034] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0035] Embodiment 1

[0036] This embodiment provides a magnetoresistive module. As Figure 1 shown, the cross-section of the magnetoresistive module can be rectangular, circular, or polygonal, etc. The magnetoresistive module includes a first resistance region and a second resistance region located at opposite corners. The first magnetic resistor 101 and the second magnetic resistor 102 are provided in both the first resistance region and the second resistance region. One end of the first magnetic resistor 101 in the first resistance region is connected to one end of the first magnetic resistor 101 in the second resistance region, and one end of the second magnetic resistor 102 in the first resistance region is connected to one end of the second magnetic resistor 102 in the second resistance region. The first magnetic resistor 101 in the first resistance region and the first magnetic resistor 101 in the second resistance region can be connected in parallel and / or in series, and the second magnetic resistor 102 in the first resistance region and the second magnetic resistor 102 in the second resistance region can be connected in parallel and / or in series.

[0037] The magnetoresistive module further includes a first pad area and a second pad area located diagonally. Both the first pad area and the second pad area are provided with two pads. One pad in the second pad area is connected to the other end of the first magnetoresistor 101 in the first resistor area, and one pad in the first pad area is connected to the other end of the first magnetoresistor 101 in the second resistor area; the other pad in the second pad area is connected to the other end of the second magnetoresistor 102 in the first resistor area, and the other pad in the first pad area is connected to the other end of the second magnetoresistor 102 in the second resistor area. In this embodiment, as Figure 1 shown, the first pad 103 in the first pad area is connected to the other end of the first resistor 101 in the second resistor area, and the third pad 105 in the second pad area is connected to the other end of the first resistor 101 in the first resistor area; the second pad 104 in the first pad area is connected to the other end of the second resistor 102 in the second resistor area, and the fourth pad 106 in the second pad area is connected to the other end of the second resistor 102 in the first resistor area.

[0038] In the above technical solution, the first resistor area and the second resistor area in the magnetoresistive module are located diagonally, the first resistor area and the second resistor area in the magnetoresistive module are located diagonally, the first pad area and the second pad area are located diagonally, and the first magnetoresistor and the second magnetoresistor are centrally distributed in the first resistor area and the second resistor area, making the layout of the entire magnetoresistive module more compact, fully utilizing the wafer space, so that the space occupancy can be fully reduced under the condition of the same performance, reducing the volume and size of the magnetoresistive module. The magnetoresistive module provided in this embodiment has a smaller volume and can better meet the current and future requirements.

[0039] As Figure 1 shown, the first resistor area and the first pad area in the magnetoresistive module are arranged side by side horizontally, the first resistor area and the second pad area are arranged side by side vertically, the second resistor area and the first pad area are arranged side by side vertically, and the second resistor area and the second pad area are arranged side by side horizontally, that is, the first resistor area, the first pad area, the second resistor area, and the second pad area are arranged clockwise in the magnetoresistive template.

[0040] In this embodiment, the cross-section of the magnetoresistive module is rectangular, the first resistor area, the first pad area, the second resistor area, and the second pad area are distributed in a "field" shape, and the projections of the first resistor area and the second resistor area in the horizontal and vertical directions do not overlap.

[0041] In this embodiment, as Figure 1As shown, the length and width of the magnetoresistive module are both 500 microns, and it may also include a cutting groove of 80 microns, that is, a rectangular ring with a width of 40 microns is reserved around the magnetoresistive module. In some embodiments, the length and width dimensions of the magnetoresistive module can be 480 microns, 580 microns, etc., and the dimensions of the cutting groove can be 70 microns, 90 microns, etc. Those skilled in the art can reasonably set the dimensions of the magnetoresistive module and the cutting groove according to the actual situation, and no limitation is made here.

[0042] As Figure 1 and Figure 2 shown, the number of magnetotunnel junction elements 201 included in the first magnetoresistor 101 is equal to the number of magnetotunnel junction elements 201 included in the second magnetoresistor 102. The multiple magnetotunnel junction elements 201 in the first magnetoresistor 101 correspond one by one to the multiple magnetotunnel junction elements 201 in the second magnetoresistor 102, and the corresponding magnetotunnel junction elements 201 are adjacent in position. In this embodiment, the number of magnetotunnel junction elements 201 of the first magnetoresistor 101 in the first resistance region is equal to the number of magnetotunnel junction elements 201 of the second magnetoresistor 102 in the first resistance region, and the number of magnetotunnel junction elements 201 of the first magnetoresistor 101 in the second resistance region is equal to the number of magnetotunnel junction elements 201 of the second magnetoresistor 102 in the second resistance region.

[0043] As Figure 1 and Figure 2 shown, the magnetotunnel junction elements 201 included in the first magnetoresistor 101 are arranged in columns in the first resistance region and the second resistance region, and the magnetotunnel junction elements 201 included in the second magnetoresistor 102 are arranged in columns in the first resistance region and the second resistance region. Moreover, the number of columns of the magnetotunnel junction elements included in the first magnetoresistor 101 is equal to the number of columns of the magnetotunnel junction elements included in the second magnetoresistor 102, that is, the number of columns of the magnetotunnel junction elements 201 of the first magnetoresistor 101 in the first resistance region is equal to the number of columns of the magnetotunnel junction elements 201 of the second magnetoresistor 102 in the first resistance region, and the number of columns of the magnetotunnel junction elements 201 of the first magnetoresistor 101 in the second resistance region is equal to the number of columns of the magnetotunnel junction elements 201 of the second magnetoresistor 102 in the second resistance region. In this embodiment, the magnetotunnel junction elements 201 included in the first magnetoresistor 101 and the second magnetoresistor 102 are both arranged in two columns in the first resistance region, and the magnetotunnel junction elements 201 included in the first magnetoresistor 101 and the second magnetoresistor 102 are both arranged in four columns in the second resistance region. In some embodiments, the number of columns of the magnetotunnel junction elements 201 included in the first magnetoresistor 101 and the second magnetoresistor 102 in the first resistance region and the second resistance region can be five columns, six columns, etc. Those skilled in the art can reasonably adjust according to the actual situation, and no limitation is made here.

[0044] The first magnetoresistance and the second magnetoresistance are arranged in multiple columns and adjacent to each other. Due to this compact arrangement, the structure of the entire magnetoresistance module becomes more compact, enabling full utilization of the entire space to reduce the volume of the magnetoresistance module. In some embodiments, the first magnetoresistance and the second magnetoresistance can also be arranged in the form of multiple columns and multiple rows in the first resistance region and the second resistance region simultaneously.

[0045] As Figure 3 shown, the first magnetoresistance 101 and the second magnetoresistance 102 are formed by connecting multiple magnetic tunnel junction elements 201 in series between the upper wire layer 203 and the lower wire layer 202. In this embodiment, as Figure 2 shown, the magnetoresistance module consists of one hundred and sixty magnetic tunnel junction (MTJ) elements 201 and four pads, and is divided into two groups of mutually independent magnetoresistances arranged side by side and staggered, namely the first magnetoresistance 101 and the second magnetoresistance 102. Each group of magnetoresistances is composed of eighty magnetic tunnel junction elements 201 connected in series and two pads. Figure 2 and Figure 5 shown, the size of the pad is 85 microns × 160 microns. The pad size shown in this embodiment is only the size of one of the embodiments. In other embodiments, the size of the pad can also be 90 microns × 160 microns or 95 microns × 170 microns, etc. Those skilled in the art can make a reasonable choice according to the actual situation and are not limited herein. And in some embodiments, the number of magnetic tunnel junction elements 201 can also be two hundred, three hundred, etc., and these magnetic tunnel junction elements 201 can be connected in parallel or in series, and can also be connected in parallel and in series in the same magnetoresistance. This design avoids the unequal resistances caused by uneven thin film deposition of the magnetic tunnel junction elements, the corresponding resistance differences brought about by wire layout, etc., and the corresponding resistance differences caused by process fluctuations during the processing, thus improving the consistency of the two resistances.

[0046] The magnetoresistance in the magnetoresistance module has a multi-layer film structure, including a plurality of lower wire layers 202 formed on a substrate (not shown). A magneto-tunnel junction element layer composed of multi-layers is provided on the lower wire layers 202 of the first resistance region and the second resistance region, that is, a plurality of magneto-tunnel junction elements 201 are formed on the lower wire layers 202. In addition, two pad metal layers are provided on the lower wire layers 202 of the first pad region and the second pad region respectively, that is, the first pad 103, the second pad 104, the third pad 105, and the fourth pad 106 are all formed on the lower wire layers 202. The pads are connected to the magnetoresistance through the lower wire layers 202, and an upper wire layer 203 formed by multi-layers of metal is further provided on the magneto-tunnel junction elements 201. For the same thin film layer, the properties of the thin films at adjacent positions are similar, and the closer the positions are, the closer the properties of the thin films are. Therefore, in the magnetoresistance module provided in this embodiment, the resistance values of the first magnetoresistance 101 and the second magnetoresistance 102 are very close, or even equal. Thus, when the magnetoresistance module is applied in a magnetic sensor, in the built half-bridge or full-bridge, the corresponding bridge arm resistance values are likely to be equal, avoiding the situation where the performance of the sensor is reduced or even it cannot work properly due to unequal corresponding bridge arm resistance values.

[0047] As Figure 3 and Figure 4 shown, the lower wire layer 202 is in a "one" shape, and its size can be 24 microns × 23 microns. The lower wire layer 202 connects the same magnetoresistance and two adjacent magneto-tunnel junction elements 201 in the same column; As Figure 3 and Figure 5 shown, the upper wire layer 203 is in a "U" shape, an inverted "U" shape, an "I" shape, or a "one" shape. When it is in an "I" shape, the size of the upper wire layer 203 can be 18 microns × 23 microns. The upper wire layer 203 connects the same magnetoresistance and two adjacent magneto-tunnel junction elements 201 located on different lower wire layers 202 in the same column, or connects the same magnetoresistance and the magneto-tunnel junction elements 201 at both ends of two adjacent columns. The upper wire layer 203 and the lower wire layer 202 alternately connect each magneto-tunnel junction element 201 in series in turn. Those skilled in the art can reasonably set the shapes and sizes of the upper wire layer 203 and the lower wire layer 202 according to specific situations, and no limitation is made here.

[0048] The magnetoresistive tunnel junction element 201 included in the first magnetoresistor 101 and the magnetoresistive tunnel junction element 201 included in the second magnetoresistor 102 both adopt a series connection of the upper wire layer 203 and the lower wire layer 202, and the magnetoresistive tunnel junction element 201 included in the first magnetoresistor 101 is connected to one of the pads in the first pad area and the second pad area, and the magnetoresistive tunnel junction element 201 included in the second magnetoresistor 102 is connected to the other pad in the first pad area and the second pad area. In this embodiment, the magnetoresistive tunnel junction element 201 included in the first magnetoresistor 101 is connected to the second pad 104 in the first pad area and the third pad 105 in the second pad area, and the magnetoresistive tunnel junction element 201 included in the second magnetoresistor 102 is connected to the first pad 103 in the first pad area and the fourth pad 106 in the second pad area. The wires for connecting the first magnetoresistor 101 in the first resistance area to the first magnetoresistor 101 in the second resistance area, and the wires for connecting the second magnetoresistor 102 in the first resistance area to the second magnetoresistor 102 in the second resistance area are both arranged at the boundary position between the first resistance area and the second resistance area.

[0049] In some embodiments, the first magnetoresistor 101 in the first resistance area and the first magnetoresistor 101 in the second resistance area can also be connected through pads (not shown), and the second magnetoresistor 102 in the first resistance area and the second magnetoresistor 102 in the second resistance area can also be connected through pads (not shown), and a full-bridge module can be formed.

[0050] The current flow direction of the magnetoresistor provided in this embodiment is as Figure 6 shown. The current flows through the magnetoresistive tunnel junction element 201 in the lower wire layer 202, then through the upper wire layer 203, and finally through the next magnetoresistive tunnel junction element 201 to the next lower wire layer 202. And so on, and finally flows to the pads in the diagonal area.

[0051] The shape of the magnetoresistive tunnel junction element 201 can be rectangular or oval. As Figure 2 and Figure 3 shown, in this embodiment, the magnetoresistive tunnel junction element 201 is oval, and the size of the magnetoresistive tunnel junction element 201 can be 4 microns × 12 microns. Those skilled in the art can reasonably select the size of the magnetoresistive tunnel junction element 201 according to the actual situation, and no limitation is made here.

[0052] The magnetoresistor module provided in this embodiment is a double-independent resistor side-by-side design, which has the advantages of small volume and flexible use. It can be used to build a half-bridge or a full-bridge, and is suitable for various packaging forms. The bridge module built using the magnetoresistor module provided in this embodiment can more easily make the resistance values of the corresponding bridge arms equal, thereby improving the performance of the magnetic sensor.

[0053] Embodiment 2

[0054] This embodiment also provides a magnetic sensor, which includes the magnetoresistive module provided in Embodiment 1. The magnetoresistive module provided in Embodiment 1 is applied in the magnetic sensor in the form of a bridge, and the bridge module is as shown in Figure 7 . The bridge module has two magnetoresistive modules provided in Embodiment 1. The first magnetoresistor and the second magnetoresistor in one magnetoresistive module are the first bridge arm 305 and the second bridge arm 306, and the first magnetoresistor and the second magnetoresistor in the other magnetoresistive module are the third bridge arm 307 and the fourth bridge arm 308. In this embodiment, the magnetoresistive module provided in Embodiment 1 forms a full-bridge form. In some embodiments, the magnetoresistive module provided in Embodiment 1 can also be applied in the magnetic sensor in the form of a half-bridge.

[0055] Since the resistance values of the first magnetoresistor 101 and the second magnetoresistor 102 of the magnetoresistive module provided in Embodiment 1 are very close or even equal, the bridge formed by the magnetoresistive module provided in Embodiment 1 can ensure that the resistance values of the corresponding bridge arms are equal, thereby improving the performance of the bridge module to achieve its use value and ensuring that the performance of the sensor is not reduced.

[0056] In the manufacturing process of the wafer, magnetization is unified in the same direction, that is, the magnetization directions of the two magnetoresistive modules are the same. As shown in Figure 7 , when building the full-bridge package, the magnetization directions of the pairwise corresponding bridge arms are made opposite by rotating the angle of the chip (magnetoresistive module), that is, the magnetization directions of the first bridge arm 305 and the second bridge arm 306 are the first magnetization direction 309, and the magnetization directions of the third bridge arm 307 and the fourth bridge arm 308 are the second magnetization direction 310. The pads in the magnetoresistive module form the ground terminal 301, the power supply terminal 302, the first output terminal 303, and the second output terminal 304 in the full-bridge module.

[0057] Obviously, the above embodiments are only examples for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or variations can be made based on the above description. It is not necessary and impossible to enumerate all the implementation manners here. The obvious changes or variations derived therefrom are still within the protection scope of the present invention.

Claims

1. A magnetoresistive module, characterized in that, it includes: A first resistance region and a second resistance region located diagonally. Both the first resistance region and the second resistance region are provided with a first magnetoresistor and a second magnetoresistor. One end of the first magnetoresistor in the first resistance region is connected to one end of the first magnetoresistor in the second resistance region, and one end of the second magnetoresistor in the first resistance region is connected to one end of the second magnetoresistor in the second resistance region; A first pad region and a second pad region located diagonally. Both the first pad region and the second pad region are provided with two pads. One pad in the second pad region is connected to the other end of the first magnetoresistor in the first resistance region, one pad in the first pad region is connected to the other end of the first magnetoresistor in the second resistance region, the other pad in the second pad region is connected to the other end of the second magnetoresistor in the first resistance region, and the other pad in the first pad region is connected to the other end of the second magnetoresistor in the second resistance region; The first resistance region, the first pad region, the second resistance region and the second pad region are distributed in a "field" shape, and the projections of the first resistance region and the second resistance region in the horizontal and vertical directions do not overlap.

2. The magnetoresistive module according to claim 1, characterized in that, The first resistance region and the first pad region are arranged side by side horizontally, and the first resistance region and the second pad region are arranged side by side vertically; The second resistance region and the first pad region are arranged side by side vertically, and the second resistance region and the second pad region are arranged side by side horizontally.

3. The magnetoresistive module according to claim 1 or 2, characterized in that, The number of magnetic tunnel junction elements included in the first magnetoresistor is equal to the number of magnetic tunnel junction elements included in the second magnetoresistor. The multiple magnetic tunnel junction elements in the first magnetoresistor correspond to the multiple magnetic tunnel junction elements in the second magnetoresistor one by one, and the corresponding magnetic tunnel junction elements are adjacent in position.

4. The magnetoresistive module according to claim 3, characterized in that, The number of magnetic tunnel junction elements of the first magnetoresistor in the first resistance region is equal to the number of magnetic tunnel junction elements of the second magnetoresistor in the first resistance region, and the number of magnetic tunnel junction elements of the first magnetoresistor in the second resistance region is equal to the number of magnetic tunnel junction elements of the second magnetoresistor in the second resistance region.

5. The magnetoresistive module according to claim 3, characterized in that, The magnetic tunnel junction elements included in the first magnetoresistor are arranged in columns in the first resistance region and the second resistance region, and the magnetic tunnel junction elements included in the second magnetoresistor are arranged in columns in the first resistance region and the second resistance region; The number of columns of magnetic tunnel junction elements included in the first magnetoresistor is equal to the number of columns of magnetic tunnel junction elements included in the second magnetoresistor.

6. The magnetoresistive module according to claim 4 or 5, characterized in that, The magnetic tunnel junction elements included in the first magnetoresistor are connected in series through an upper wire layer and a lower wire layer, and are connected to one pad in the second pad area and one pad in the first pad area; the magnetic tunnel junction elements included in the second magnetoresistor are connected in series through an upper wire layer and a lower wire layer, and are connected to the other pad in the second pad area and the other pad in the first pad area.

7. The magnetoresistor module according to claim 6, wherein, the wires for connecting the first magnetoresistor in the first resistor area and the first magnetoresistor in the second resistor area, and the wires for connecting the second magnetoresistor in the first resistor area and the second magnetoresistor in the second resistor area are uniformly arranged at the junction position of the first resistor area and the second resistor area.

8. The magnetoresistor module according to claim 4 or 5, wherein, the shape of the magnetic tunnel junction element is rectangular or oval.

9. A magnetic sensor, wherein, it includes the magnetoresistor module according to any one of claims 1-8.

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