Complicated Curved Thin Film Transistor and Self-Aligned Electric Fluid Conformal Photolithography Fabrication Method

Abstract

The invention belongs to the technical field related to the preparation of organic thin film transistors, and discloses a complex curved surface thin film transistor and a self-aligned electrofluid conformal lithography manufacturing method, comprising the following steps: (1) sequentially preparing a bottom gate electrode on a curved surface substrate, Bottom gate dielectric layer and semiconductor layer; (2) The electrofluid jet printing process is used to prepare a fiber mask on the semiconductor layer. During electrofluid jet printing, the spatial electric field is affected by the curved substrate and the spatial distribution is distorted, so that the generated jet and fiber deposition At the shortest point in the normal direction of the curved surface substrate, the self-alignment of the normal curved surface is realized; (3) The source-drain electrodes and leads are prepared on the semiconductor layer using a fiber mask, and the position of the fiber mask is automatically generated due to the height difference channel; (4) heating the fiber mask to transform the fiber mask into a molten state, and then realize self-aligned encapsulation, and the manufacture is completed. The invention realizes the in-situ preparation and self-encapsulation of the thin film transistor on the curved surface substrate through the self-alignment process of electrofluid jet printing.

Description

technical field

[0001] The invention belongs to the technical field related to the preparation of organic thin film transistors, and more specifically, relates to a complex curved surface thin film transistor and a self-aligned electrofluid conformal lithography manufacturing method, in particular to an organic thin film with small channels on a complex curved surface substrate Transistor Self-Aligned Electrofluidic Conformal Lithographic Fabrication Method. Background technique

[0002] Organic thin-film transistor (OTFT) is the key driving electronic component of the next-generation display technology and multi-functional sensor in the future. The channel length (L) of its key feature structure has micro-nano dimensions. The current preparation process relies heavily on traditional lithography technology. Traditional lithography technology relies heavily on the manufacturing accuracy of the mask, the chemical properties of the photoresist, and the wavelength of the light s...

Examples

Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0037] see figure 1 , figure 2 , Figure 4 and Figure 5 , the present invention provides a self-aligned electrofluid conformal lithography manufacturing method of complex curved surface thin film transistors, the preparation method is a self-aligned electrofluid conformal lithography manufacturing method, which includes the following steps:

[0038]Step 1, preparing a three-dimensional cur...

technical field

[0001] The invention belongs to the technical field related to the preparation of organic thin film transistors, and more specifically, relates to a complex curved surface thin film transistor and a self-aligned electrofluid conformal lithography manufacturing method, in particular to an organic thin film with small channels on a complex curved surface substrate Transistor Self-Aligned Electrofluidic Conformal Lithographic Fabrication Method. Background technique

[0002] Organic thin-film transistor (OTFT) is the key driving electronic component of the next-generation display technology and multi-functional sensor in the future. The channel length (L) of its key feature structure has micro-nano dimensions. The current preparation process relies heavily on traditional lithography technology. Traditional lithography technology relies heavily on the manufacturing accuracy of the mask, the chemical properties of the photoresist, and the wavelength of the light s...

Examples

Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0037] see figure 1 , figure 2 , Figure 4 and Figure 5 , the present invention provides a self-aligned electrofluid conformal lithography manufacturing method of complex curved surface thin film transistors, the preparation method is a self-aligned electrofluid conformal lithography manufacturing method, which includes the following steps:

[0038]Step 1, preparing a three-dimensional cur...

Images