Heat dissipation and temperature control semiconductor refrigeration sheet and heat dissipation device

Abstract

The present invention discloses a heat dissipation temperature-controlled semiconductor refrigeration plate and a heat dissipation device, wherein the heat dissipation temperature-controlled semiconductor refrigeration plate comprises: a semiconductor layer, on which an external power supply wire is arranged; a first substrate, one side of the first substrate is bonded to the semiconductor layer, and the other side is provided with a plurality of heat dissipation fins, and the area of ​​the first substrate is larger than the area of ​​the semiconductor layer; a second substrate, the second substrate is bonded to the semiconductor layer on the opposite side of the first substrate; a temperature control component is arranged on the first substrate and the second substrate, and the temperature control component is connected to the external power supply wire circuit. In the present invention, the area of ​​the first base layer is larger than the area of ​​the semiconductor layer, and a plurality of heat dissipation fins for improving the heat dissipation efficiency of the hot end are arranged on the first base layer, thereby reducing the extreme temperature of the cold end, and a temperature control component is arranged on the first substrate and the second substrate, and the intelligent opening and closing of the external power supply wire is controlled by temperature monitoring, thereby increasing the application range of the semiconductor refrigeration plate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor refrigeration sheets, and in particular to a heat dissipation and temperature control semiconductor refrigeration sheet and a heat dissipation device. Background Art

[0002] Semiconductor refrigerator is a heat transfer tool. When current passes through a thermocouple pair formed by connecting an N-type semiconductor material and a P-type semiconductor material, heat transfer will occur between the two ends. The heat is transferred from one end to the other, thereby generating a temperature difference to form a hot and cold end. When the temperature difference between the hot and cold ends reaches a certain level and the amount of these two heat transfers is equal, an equilibrium point will be reached, and the positive and reverse heat transfers will cancel each other out.

[0003] In the prior art, semiconductor refrigerators are composed of many N-type semiconductor and P-type semiconductor particles arranged with each other, and the N and P semiconductors are connected by conductors to form a complete circuit, and are made by sandwiching two ceramic sheets. Existing semiconductor refrigerators do not have the function of autonomous temperature control, and the heat dissipation of the hot end limits the temperature limit of the cold end. Therefore, existing semiconductor refrigerators have great limitations when used.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] In order to solve the problem that the semiconductor refrigerator in the prior art does not have the function of autonomous temperature control and the heat dissipation of the hot end limits the temperature limit of the cold end, resulting in great limitations in the application of the semiconductor refrigerator, the present invention provides a heat dissipation and temperature control semiconductor refrigerator and a heat dissipation device.

[0006] The present invention is achieved through the following technical solutions:

[0007] A heat dissipation and temperature control semiconductor refrigeration sheet, wherein the heat dissipation and temperature control semiconductor refrigeration sheet comprises:

[0008] A semiconductor layer, wherein an external power supply wire is arranged on the semiconductor layer;

[0009] a first substrate, one side of which is bonded to the semiconductor layer, and the other side of which is provided with a plurality of heat dissipation fins, and the area of ​​the first substrate is larger than the area of ​​the semiconductor layer;

[0010] a second substrate, the second substrate being bonded and arranged on a side of the semiconductor layer opposite to the side where the first substrate is arranged;

[0011] The first substrate and the second substrate are provided with temperature control components, and the temperature control components are connected to the external power supply wire circuit.

[0012] The heat dissipation and temperature control semiconductor refrigeration plate, wherein a plurality of the heat dissipation fins are evenly arranged on the first substrate at a predetermined distance and a predetermined angle, and a plurality of the heat dissipation fins are components made of a thermal conductive material.

[0013] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein a printed circuit is provided on the first substrate, and the printed circuit is connected to one end of the semiconductor layer and to the external power supply wire circuit.

[0014] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein the temperature control component includes a first temperature control element and a second temperature control element, and the first temperature control element and the second temperature control element are used to monitor the temperature of the first substrate and the second substrate.

[0015] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein the first temperature control element is used to monitor a first preset temperature, and the second temperature control element is used to monitor a second preset temperature, and when the temperature of the first substrate is higher than the first preset temperature or the temperature of the second substrate is lower than the second preset temperature, the first temperature control element and the second temperature control element block the external power supply wire;

[0016] When the temperature of the first substrate is lower than a first preset temperature or the temperature of the second substrate is higher than a second preset temperature, the first temperature control element and the second temperature control element are connected to the external power supply wire.

[0017] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein the first temperature control element is bonded and connected to the first substrate, and the second temperature control element is bonded and connected to the second substrate;

[0018] Alternatively, the first temperature control component and the second temperature control component are attached to the first substrate at a certain distance.

[0019] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein the first temperature control element is a positive temperature coefficient thermistor, and the second temperature control element is a negative temperature coefficient thermistor.

[0020] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein a sealing layer is arranged on the outer side of the semiconductor layer, both sides of the sealing layer are tightly connected to the first substrate and the second substrate respectively, and the first temperature control element and the second temperature control element are wrapped in the sealing layer.

[0021] The heat dissipation and temperature control semiconductor refrigeration sheet, wherein the area of ​​the first substrate is 10% or more larger than the projected area of ​​the semiconductor layer on the first substrate.

[0022] A heat dissipation device, wherein the heat dissipation device comprises the heat dissipation and temperature control semiconductor refrigeration plate described in any one of the above.

[0023] The beneficial effects of the present invention are as follows: the present invention designs a new type of semiconductor refrigeration plate, including a semiconductor layer, a first base layer and a second base layer, the area of ​​the first base layer is larger than the area of ​​the semiconductor layer, and a plurality of heat dissipation fins are arranged on the first base layer, the heat dissipation efficiency of the hot end is improved by the heat dissipation fins, thereby reducing the extreme temperature of the cold end, and temperature control components are arranged on the first substrate and the second substrate, and the temperature is monitored and controlled by the external power supply wire, thereby realizing intelligent opening and closing, thereby increasing the application scope of the semiconductor refrigeration plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the three-dimensional structure of the heat dissipation and temperature control semiconductor refrigeration sheet of the present invention;

[0025] Figure 2 It is a bottom view of the first substrate in the heat dissipation and temperature control semiconductor refrigeration sheet of the present invention.

[0026] exist Figure 1 to Figure 2 In the figure: 100, semiconductor layer; 110, external power supply wire; 200, first substrate; 210, heat sink fins; 220, printed circuit; 230, first temperature control element; 240, first insulating sheet; 300, second substrate; 310, second temperature control element; 320, second insulating sheet; 400, sealing layer. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0028] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly.

[0029] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0030] In the prior art, semiconductor refrigerators are composed of many N-type semiconductor and P-type semiconductor particles arranged with each other, and the N and P semiconductors are connected by conductors to form a complete circuit, and are made by sandwiching two ceramic sheets. Existing semiconductor refrigerators do not have the function of autonomous temperature control, and the heat dissipation of the hot end limits the temperature limit of the cold end. Therefore, existing semiconductor refrigerators have great limitations when used.

[0031] Based on the above problems in the prior art, the present invention provides a heat dissipation temperature control semiconductor refrigeration sheet, such as Figure 1 As shown, the heat dissipation temperature-controlled semiconductor refrigeration plate includes: a semiconductor layer 100, on which an external power supply wire 110 is arranged; a first substrate 200, one side of the first substrate 200 is bonded to the semiconductor layer 100, and the other side is provided with a plurality of heat dissipation fins 210, and the area of ​​the first substrate 200 is larger than the area of ​​the semiconductor layer 100; a second substrate 300, which is bonded to the semiconductor layer 100 on the opposite side of the first substrate 200; a temperature control component is arranged on the first substrate 200 and the second substrate 300, and the temperature control component is circuit-connected to the external power supply wire 110.

[0032] The present invention designs a new type of semiconductor refrigeration plate, including a semiconductor layer 100, a first base layer and a second base layer. The area of ​​the first base layer is larger than that of the semiconductor layer 100, and a plurality of heat dissipation fins 210 are arranged on the first base layer. The heat dissipation efficiency of the hot end is improved by the heat dissipation fins 210, thereby reducing the extreme temperature of the cold end. A temperature control component is arranged on the first substrate 200 and the second substrate 300. By monitoring the temperature and controlling the external power supply wire 110, intelligent opening and closing is realized, thereby expanding the application range of the semiconductor refrigeration plate.

[0033] In the above embodiment, if Figure 1 As shown, the heat dissipation and temperature control semiconductor refrigeration plate of the present invention is based on the same principle as the semiconductor refrigeration plate in the prior art, both of which realize the movement of electrons by conducting the interconnected N-type semiconductor and P-type semiconductor, thereby generating heat under the action of the semiconductor's own resistance, and the heat is transferred from one end to the other end, generating a temperature difference to form a hot and cold end, so as to achieve two end points of cooling and heat dissipation. In this embodiment, the structure composed of the above-mentioned N-type semiconductor and P-type semiconductor is replaced by the semiconductor layer 100, and those skilled in the art can understand the actual structural setting of the semiconductor layer 100 based on the prior art.

[0034] In this embodiment, if Figure 1As shown, an external power supply wire 110 is also provided on the semiconductor layer 100. Two external power supply wires 110 are provided, which are respectively connected to the circuits at both ends of the semiconductor layer 100. By connecting the external power supply, the semiconductor layer 100 can be powered on and work, thereby generating a hot and cold temperature difference on both sides of the semiconductor layer 100.

[0035] Based on the above embodiments, in the present invention, a first substrate 200 and a second substrate 300 are respectively arranged on both sides of the above-mentioned semiconductor layer 100, wherein one side of the first substrate 200 is bonded to the semiconductor layer 100, and the other side is provided with a plurality of heat dissipation fins 210. During actual installation, the first substrate 200 is preferably installed corresponding to the end of the semiconductor layer 100 where heat is generated. When heat is generated on the side corresponding to the semiconductor layer 100 and the first substrate 200, the first substrate 200 can direct the heat to the heat dissipation fins 210, and increase the contact area with the air through the heat dissipation fins 210, thereby accelerating the heat exchange between one side of the first substrate 200 and the air, and then further reducing the temperature of the cooling end by cooling the heat dissipation end, thereby achieving a better cooling effect.

[0036] In the above embodiment, if Figure 1 As shown, the first substrate 200 and the second substrate 300 sandwich the semiconductor layer 100. When the first substrate 200 corresponds to the end of the semiconductor layer 100 that generates heat, the second substrate 300 corresponds to the side of the semiconductor layer 100 that generates low temperature. In actual use, it is used to cool down heating components such as electrical appliances. In the above embodiment, since the heat dissipation fins 210 arranged on the first substrate 200 can accelerate the dissipation of heat on the first substrate 200, the low temperature generated on the second substrate 300 will be further reduced according to the temperature balance characteristics of the semiconductor refrigeration plate, thereby achieving a better cooling effect on the electrical appliances.

[0037] Furthermore, if Figure 1 As shown, in actual setting, the area of ​​the first substrate 200 is also set to be larger than the cross-sectional area of ​​the semiconductor layer 100. The advantage of such setting is that when the semiconductor layer 100 generates heat on the side corresponding to the first substrate 200, the first substrate 200 with a larger area can quickly diffuse the temperature, thereby increasing the contact area between the first substrate 200 and the air. On the other hand, as many heat dissipation fins 210 as possible can be set on the other side of the first substrate 200 to further improve the heat dissipation efficiency. The first substrate 200 with a larger area is convenient for the staff to install the heat dissipation fins 210 while ensuring the heat dissipation efficiency. The present invention fixes the fins on the first substrate 200 and sets them integrally with the semiconductor layer 100, thereby effectively reducing the temperature of the cooling end of the semiconductor layer 100 while avoiding excessive thickness of the heat dissipation and temperature control semiconductor refrigeration plate, so that it has a broader application prospect.

[0038] Preferably, in actual configuration, the area of ​​the first substrate 200 should be 10% or more larger than the projected area of ​​the semiconductor layer 100 on the first substrate 200. The advantage of such a configuration is that on the one hand, the stability of heat dissipation is ensured, and on the other hand, it is convenient for production. At the same time, the first substrate 200 serves as a bearing structure, which makes it convenient for the staff to modify the first substrate 200 and set up other electrical appliances for use.

[0039] In the above embodiment, if Figure 1 As shown, there are a plurality of heat sink fins 210 disposed on the first substrate 200, and the plurality of heat sink fins 210 are spaced at a predetermined distance and are uniformly arranged on the first substrate 200 at a predetermined angle, and the heat sink fins 210 are made of a thermal conductive material. In a specific embodiment, the first substrate 200, the second substrate 300 and the heat sink fins 210 are all made of copper, and the heat sink fins 210 are fixed to the first substrate 200 by welding, clamping, etc. Since the same materials are used, the heat can be quickly dispersed and uniformly directed to the heat sink fins 210. In a specific embodiment, the fins can be arranged in a vortex shape as shown in the figure, and adjacent heat sink fins 210 are spaced at a certain distance to form an air duct so that the heat can be taken away by the air; in another specific embodiment, the fins can also be arranged in parallel with each other, and adjacent fins are also spaced at a certain distance so that the air can flow between adjacent fins.

[0040] In actual settings, such as Figure 1 and Figure 2 As shown, a first insulating sheet 240 is also provided at a position corresponding to the semiconductor layer 100 on the first substrate 200, and a second insulating sheet 320 is also provided at a position corresponding to the semiconductor layer 100 on the second substrate 300. The first insulating sheet 240 and the second insulating sheet 320 sandwich the semiconductor layer 100, and the first insulating sheet 240 and the second insulating sheet 320 have a high thermal conductivity, which can ensure that the temperature generated at both ends is derived while isolating the electrons. In actual production, the first insulating sheet 240 on the first substrate 200 and the second insulating sheet 320 on the second substrate 300 are both produced in an integrated manner, that is, the actual thickness of the heat dissipation temperature control semiconductor refrigeration sheet of the present invention is the superposition of the thickness of the first substrate 200, the second substrate 300 and the thermal conductive layer, and the first insulating sheet 240 and the second insulating sheet 320 are embedded in the first substrate 200 and the second substrate 300, which will not increase the overall thickness of the heat dissipation temperature control semiconductor refrigeration sheet.

[0041] In another embodiment of the present invention, Figure 2As shown, a printed circuit 220 is also arranged on the first substrate 200, that is, the first substrate 200 not only has the function of heat dissipation, but also can serve as the function of the printed circuit 220 board. In actual setting, technical personnel in this field can also set the printed circuit 220 on the second substrate 300. Technical personnel in this field can set it by themselves according to the selected materials and actual setting requirements. The set printed circuit 220 is connected to the above-mentioned external power supply wire 110. When in use, electrical appliances can be arranged on the first substrate 200 or the second substrate 300 according to the use requirements. The electrical appliances are coupled with the printed circuit 220, and the printed circuit 220 board is energized through the external power supply wire 110 to achieve the effect of powering the electrical appliances, so as to add the function of the heat dissipation and temperature control semiconductor refrigeration plate of the present invention in a modular form.

[0042] Specifically, in a specific embodiment, a cooling fan can be arranged at the center of the heat dissipation fins 210 arranged on the first substrate 200, and the cooling fan works through the printed circuit 220. The cooling fan is rotated under the power supply of the external power supply wire 110, and the wind force is blown in the wind channel formed between adjacent heat dissipation fins 210, thereby improving the heat dissipation efficiency by increasing the air flow rate on the physical surface. In other embodiments of the present invention, other electrical appliances such as LED lamp beads, speakers, etc. can also be added to increase functions, which is not limited in this application.

[0043] In another possible implementation of the present invention, since the temperature difference on both sides of the semiconductor layer 100 is constant, but not limited to a fixed temperature range, for example, when the temperature difference of the semiconductor layer 100 is 60 degrees Celsius, the cold end temperature of the semiconductor layer 100 is 0 degrees Celsius, and the hot end temperature is 60 degrees Celsius. In a certain application scenario, the cold end temperature may be 40 degrees Celsius and the hot end temperature may be 100 degrees Celsius. Therefore, in order to avoid the semiconductor layer 100 from damaging the corresponding cooling equipment, a controllable temperature component is also provided in this embodiment to control the opening and closing of the semiconductor layer 100.

[0044] Specifically, Figure 1 and Figure 2As shown, the temperature control component includes a first temperature control element 230 and a second temperature control element 310. In actual use, the staff sets the threshold temperatures of the first temperature control element 230 and the second temperature control element 310, so as to set the temperature of the semiconductor layer 100 within a certain interval, in which the highest temperature is the first preset temperature and the lowest temperature is the second preset temperature. The first preset temperature is monitored by the first temperature control element 230, and the second preset temperature is monitored by the second temperature control element 310. When the temperature on the first substrate 200 is higher than the first preset temperature, the circuit supply relationship between the external power supply wire 110 and the semiconductor layer 100 can be cut off by the first temperature control element 230, so that the semiconductor layer 100 is suspended; when the temperature on the second substrate 300 is lower than the second preset temperature, the circuit supply relationship between the external wire and the semiconductor layer 100 can be cut off by the second temperature control element 310, so that the semiconductor layer 100 is also suspended.

[0045] In actual settings, the first temperature control element 230 is a positive temperature coefficient thermistor (PTC), and the second temperature control element 310 is a negative temperature coefficient thermistor (NTC). The above-mentioned positive temperature coefficient thermistor and negative temperature coefficient thermistor are made of high molecular organic polymers under high pressure, high temperature, and vulcanization reaction conditions, and then mixed with conductive ion materials, and processed by special processes. When the high temperature or low temperature at both ends of the positive temperature coefficient thermistor and the negative temperature coefficient thermistor exceeds the threshold, the internal conductive ion molecular bonds begin to break, blocking the path formed by the conductive particle material. At this time, the internal resistance value of the positive temperature coefficient thermistor and the negative temperature coefficient thermistor reaches a value of KKΩ level, thereby effectively limiting the current flow. When the temperature of the positive temperature coefficient thermistor and the negative temperature coefficient thermistor returns to the normal temperature within the threshold, the high molecular polymer recrystallizes, the conductive particle material begins to conduct again, and the entire circuit returns to normal. Therefore, in the present invention, by setting the first temperature control element 230 as a positive temperature coefficient thermistor and the second temperature control element 310 as a negative temperature coefficient thermistor, damage to the device being cooled due to the temperature exceeding the threshold value can be effectively avoided.

[0046] Based on the above embodiments, in actual application, the first temperature control element 230 and the second temperature control element 310 can be arranged at different positions of the first substrate 200 and the second substrate 300 to meet the needs of different usage situations. For example, in the first embodiment of the present invention, Figure 1 and Figure 2As shown, the first temperature control element 230 can be laminated on the first substrate 200, the second temperature control element 310 can be laminated on the second substrate 300, and the first temperature control element 230 and the second temperature control element 310 can be respectively connected to the external power supply wire 110. For example, when the temperature difference on both sides of the semiconductor layer 100 is 60 degrees Celsius and the applicable temperature of the device to be cooled is -10 degrees Celsius to 30 degrees Celsius, the first preset temperature corresponding to the first temperature control element 230 can be set to 90 degrees Celsius, and the second preset temperature corresponding to the second temperature control element 310 can be set to -10 degrees Celsius, thereby protecting the device to be cooled.

[0047] In the second embodiment of the present invention, the first temperature control element 230 and the second temperature control element 310 can also be arranged on the first substrate 200 with intervals. At this time, the temperature difference on both sides of the semiconductor layer 100 is 60 degrees Celsius, and the applicable temperature of the cooled equipment is between -10 degrees Celsius and 30 degrees Celsius. The first preset temperature corresponding to the first temperature control element 230 can be set to 90 degrees Celsius, and the corresponding second preset temperature of the second temperature control element 310 can be set to 50 degrees Celsius, so as to protect the cooled equipment.

[0048] Based on the above embodiments, Figure 1 As shown, a sealing layer 400 is further provided on the outer side of the semiconductor layer 100, and both side edges of the sealing layer 400 are tightly connected to the first substrate 200 and the second substrate 300 respectively, and the semiconductor layer 100 is wrapped inside the sealing layer 400. Furthermore, the first temperature control element 230 and the second temperature control element 310 are also wrapped inside the sealing layer 400, so that the sealing layer 400, the first substrate 200 and the second substrate 300 together form a containing space, and the semiconductor layer 100 is sealed inside to avoid the occurrence of internal short circuit of the semiconductor layer 100 due to condensation, water vapor and other problems.

[0049] The heat dissipation and temperature control semiconductor refrigeration plate of the present invention sets the area of ​​the first substrate 200 to be larger than the area of ​​the semiconductor layer 100, and sets a plurality of heat dissipation fins 210 on the first substrate 200, thereby improving the heat dissipation efficiency of the hot end of the semiconductor layer 100 while reducing the refrigeration temperature of the cold end. At the same time, a first temperature control element 230 and a second temperature control element 310 are set at positions corresponding to the first substrate 200 and the second substrate 300 on the semiconductor layer 100 to control the circuit connectivity of the semiconductor layer 100 to avoid the temperature exceeding the tolerance limit of the cooled device, thereby improving the safety of use. The heat dissipation and temperature control semiconductor refrigeration plate of the present invention has a compact structure and flexible assembly, can be used for cooling equipment with different temperature requirements, and improves the breadth of application.

[0050] Based on the above embodiments, the present invention also provides a heat dissipation device, which includes the heat dissipation temperature-controlled semiconductor refrigeration plate described in any one of the above embodiments, and the heat dissipation temperature-controlled semiconductor refrigeration plate includes: a semiconductor layer, on which an external power supply wire is arranged; a first substrate, one side of the first substrate is bonded to the semiconductor layer, and the other side is provided with a plurality of heat dissipation fins, and the area of ​​the first substrate is larger than the area of ​​the semiconductor layer; a second substrate, the second substrate is bonded to the semiconductor layer on the opposite side of the first substrate; a temperature control component is arranged on the first substrate and the second substrate, and the temperature control component is connected to the external power supply wire circuit. The present invention designs a new semiconductor refrigeration plate, including a semiconductor layer, a first base layer and a second base layer, the area of ​​the first base layer is larger than the area of ​​the semiconductor layer, and a plurality of heat dissipation fins are arranged on the first base layer, the heat dissipation efficiency of the hot end is improved by the heat dissipation fins, thereby reducing the extreme temperature of the cold end, and a temperature control component is arranged on the first substrate and the second substrate, and the external power supply wire is controlled by monitoring the temperature, thereby realizing intelligent opening and closing, and expanding the scope of application of the semiconductor refrigeration plate.

[0051] In summary, the present invention provides a heat dissipation temperature-controlled semiconductor refrigeration plate and a heat dissipation device, wherein the heat dissipation temperature-controlled semiconductor refrigeration plate comprises: a semiconductor layer, an external power supply wire is arranged on the semiconductor layer; a first substrate, one side of the first substrate is bonded to the semiconductor layer, and the other side is provided with a plurality of heat dissipation fins, and the area of ​​the first substrate is larger than the area of ​​the semiconductor layer; a second substrate, the second substrate is bonded to the semiconductor layer on the opposite side of the first substrate; a temperature control component is arranged on the first substrate and the second substrate, and the temperature control component is connected to the external power supply wire circuit. The present invention designs a new type of semiconductor refrigeration plate, including a semiconductor layer, a first base layer and a second base layer, the area of ​​the first base layer is larger than the area of ​​the semiconductor layer, and a plurality of heat dissipation fins are arranged on the first base layer, the heat dissipation efficiency of the hot end is improved by the heat dissipation fins, thereby reducing the extreme temperature of the cold end, and a temperature control component is arranged on the first substrate and the second substrate, and the external power supply wire is controlled by monitoring the temperature, thereby realizing intelligent opening and closing, and expanding the application range of the semiconductor refrigeration plate.

[0052] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A heat dissipation and temperature control semiconductor refrigeration sheet, characterized in that: The heat dissipation and temperature control semiconductor refrigeration sheet comprises: A semiconductor layer, the semiconductor layer comprising an N-type semiconductor and a P-type semiconductor connected to each other, and an external power supply wire is arranged on the semiconductor layer; A first substrate, one side of the first substrate is bonded to the semiconductor layer, and the other side is provided with a plurality of heat dissipation fins, the area of ​​the first substrate is larger than the area of ​​the semiconductor layer; the first substrate corresponds to an end of the semiconductor layer that generates heat, the first substrate guides the heat generated by the semiconductor layer to the heat dissipation fins, and increases the contact area with the air through the heat dissipation fins, thereby accelerating the heat exchange between one side of the first substrate and the air; A second substrate, the second substrate is laminated and arranged on the semiconductor layer on the side opposite to the first substrate; the second substrate corresponds to the side of the semiconductor layer where the low temperature is generated, and is used to cool the heat generating components; the heat dissipation fins arranged on the first substrate can accelerate the heat dissipation on the first substrate, so that the low temperature generated on the second substrate is further reduced; A temperature control component is provided on the first substrate and the second substrate, and the temperature control component is connected to the external power supply wire circuit; the temperature control component includes a first temperature control element and a second temperature control element, and the first temperature control element and the second temperature control element are used to monitor the temperature of the first substrate and the second substrate.

2. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: A plurality of the heat dissipation fins are evenly arranged on the first substrate at a predetermined distance and a predetermined angle, and a plurality of the heat dissipation fins are components made of a thermal conductive material.

3. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: A printed circuit is arranged on the first substrate, and the printed circuit is connected to one end of the semiconductor layer and to the external power supply wire circuit.

4. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: The first temperature control element is used to monitor a first preset temperature, and the second temperature control element is used to monitor a second preset temperature. When the temperature of the first substrate is higher than the first preset temperature or the temperature of the second substrate is lower than the second preset temperature, the first temperature control element and the second temperature control element block the external power supply wire; When the temperature of the first substrate is lower than a first preset temperature or the temperature of the second substrate is higher than a second preset temperature, the first temperature control element and the second temperature control element are connected to the external power supply wire.

5. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: The first temperature control element is bonded and connected to the first substrate, and the second temperature control element is bonded and connected to the second substrate; Alternatively, the first temperature control element and the second temperature control element are attached to the first substrate at a certain distance.

6. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: The first temperature control element is a positive temperature coefficient thermistor, and the second temperature control element is a negative temperature coefficient thermistor.

7. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: A sealing layer is arranged on the outer side of the semiconductor layer, and two sides of the sealing layer are respectively tightly connected to the first substrate and the second substrate, and the first temperature control element and the second temperature control element are wrapped in the sealing layer.

8. The heat dissipation and temperature control semiconductor refrigeration sheet according to claim 1, characterized in that: An area of ​​the first substrate is 10% or more larger than a projected area of ​​the semiconductor layer on the first substrate.

9. A heat dissipation device, characterized in that: The heat dissipation device comprises the heat dissipation and temperature control semiconductor refrigeration sheet as described in any one of claims 1 to 8.

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