Process chamber, semiconductor process equipment and maintenance method

Abstract

The present invention discloses a process chamber, semiconductor process equipment and maintenance method, wherein the process chamber comprises a chamber body, a base arranged in the chamber body and a dielectric window arranged on the top of the chamber body, the process chamber further comprises a pressure ring, a cleaning disk and a liquid inlet pipeline, the base is used to carry the cleaning disk during cleaning and maintenance, the cleaning disk is provided with a plurality of spray holes penetrating along the thickness direction thereof, the pressure ring is used to fix the cleaning disk to the base, a gap is provided between the cleaning disk and the base, the gap is connected to the liquid inlet pipeline and the spray holes, the liquid inlet pipeline is used to introduce cleaning liquid, the cleaning liquid can be sprayed through the plurality of the spray holes to cover at least part of the dielectric window. The above scheme can solve the problem of long maintenance time of semiconductor process equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment maintenance, and in particular to a process chamber, semiconductor process equipment and a maintenance method. Background Art

[0002] With the rapid development of science and technology, electronic products such as smart phones and tablet computers have become indispensable products in modern people's lives. These electronic products contain many semiconductor chips, which are usually processed by semiconductor process equipment such as etching machines.

[0003] After the semiconductor process equipment has undergone a reaction, a large amount of reaction byproducts will be deposited in the reaction chamber of the process chamber, of which the byproducts attached to the dielectric window are the most. As the etching time increases, the byproducts will naturally fall off after accumulating to a certain thickness, which will increase the wafer particle defects and reduce the wafer yield. Therefore, it is necessary to perform periodic maintenance on the process chamber regularly.

[0004] In the related art, during the maintenance of the process chamber, the reaction gas is first introduced, and the reaction gas is ionized in the process chamber to generate plasma, and the plasma reacts with the toxic gas in the reaction chamber, and then nitrogen is introduced to purge the reaction chamber, and then the chamber is opened to wash and wipe the various parts of the process chamber. In this process, it takes a long time for the plasma to treat the toxic gas and the nitrogen to purge the chamber, which results in a long maintenance time for the semiconductor process equipment. Summary of the invention

[0005] The invention discloses a process chamber, semiconductor process equipment and a maintenance method, so as to solve the problem that the maintenance time of semiconductor process equipment is long.

[0006] In order to solve the above problems, the present invention adopts the following technical solutions:

[0007] A process chamber is applied to semiconductor process equipment, the process chamber comprises a chamber body, a base arranged in the chamber body and a dielectric window arranged on the top of the chamber body, the process chamber also comprises a pressure ring, a cleaning disk and a liquid inlet pipeline, the base is used to carry the cleaning disk during cleaning and maintenance, the cleaning disk is provided with a plurality of spray holes penetrating along the thickness direction thereof, the pressure ring is used to fix the cleaning disk to the base, a gap is provided between the cleaning disk and the base, the gap is connected with the liquid inlet pipeline and the spray holes, the liquid inlet pipeline is used to introduce cleaning liquid, and the cleaning liquid can be sprayed through the plurality of spray holes to cover at least a portion of the dielectric window.

[0008] A maintenance method is applied to the above-mentioned process chamber, and the maintenance method comprises:

[0009] Pass the cleaning disc into the base in the chamber body;

[0010] Lowering the pressure ring to compress the cleaning plate;

[0011] The chamber body is filled with gas so that the gas pressure inside the chamber body is the same as the atmospheric pressure outside the chamber body;

[0012] A cleaning liquid with a preset pressure is introduced into the liquid inlet pipeline to clean at least a portion of the medium window.

[0013] A semiconductor process equipment, comprising the above process chamber

[0014] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0015] In the process chamber disclosed in the present invention, when the process chamber is maintained, when the tray is transferred out of the chamber body, the cleaning tray can be transferred into the chamber body and carried on the base. At this time, there is a gap between the base and the cleaning tray, and the gap is connected to the cleaning tray. The cleaning liquid is introduced into the liquid inlet pipeline, and the cleaning liquid enters the gap and is sprayed onto the medium window through the spray hole, thereby flushing the medium window. In this scheme, the process chamber does not need to open the cavity to clean the medium window, so the steps of plasma treatment of toxic gas and nitrogen purge chamber can be omitted, so the maintenance time of semiconductor process equipment can be compressed, thereby shortening the maintenance time of semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0017] Figure 1 A schematic diagram of the structure of a process chamber disclosed in an embodiment of the present invention;

[0018] Figure 2 A top view of a cleaning plate of a process chamber disclosed in an embodiment of the present invention;

[0019] Figure 3 A cross-sectional view of a cleaning plate of a process chamber disclosed in an embodiment of the present invention;

[0020] Figure 4 The present invention is a flowchart of a maintenance method disclosed in an embodiment of the present invention.

[0021] Description of reference numerals:

[0022] 100-chamber body, 200-base, 210-connecting channel, 300-pressure ring, 400-cleaning plate, 410-spray hole, 420-annular notch, 510-liquid inlet pipeline, 511-first valve, 520-liquid discharge pipeline, 521-second valve, 600-gap, 710-first air inlet pipeline, 711-third valve, 720-exhaust pipeline, 721-fourth valve, 730-second air inlet pipeline, 731-fifth valve, 800-sealing ring, 900-medium window. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0025] In the related art, during the maintenance of the process chamber, the toxic gas in the reaction chamber needs to be treated first. This step is called dry cleaning, which is to react the toxic gas through plasma. Then nitrogen is introduced for a period of time to blow out the residual toxic gas in the reaction chamber. Then the process chamber is opened, and the reaction byproducts attached to the side walls, dielectric windows, linings and other parts of the chamber body are wiped with a dust-free cloth dipped in deionized water. After cleaning, the process chamber is closed.

[0026] In the above process, it takes a long time to handle toxic gases and nitrogen purge, which results in a long maintenance time for semiconductor process equipment. In addition, plasma treatment of toxic gases and nitrogen purge can only remove part of the toxic gases, and the reaction byproducts attached to the parts cannot be removed. The reaction byproducts are also very harmful to the human body. In addition, when the dust-free cloth is dipped in water to wipe the reaction byproducts, it is very easy to cause the dust-free cloth to catch fire, causing a major safety accident.

[0027] like Figures 1 to 3 As shown, an embodiment of the present invention discloses a process chamber, which is applied to semiconductor process equipment. The disclosed process equipment includes a chamber body 100, a base 200, a dielectric window 900, a pressure ring 300, a cleaning plate 400 and a liquid inlet pipeline 510.

[0028] The chamber body 100 provides installation space for other components of the process chamber. The chamber body 100 has an inner cavity, that is, a reaction cavity, and the wafer is etched and other processes are performed in the inner cavity of the chamber body 100 .

[0029] The base 200 and the pressure ring 300 are arranged in the chamber body 100, and the medium window 900 is arranged at the bottom of the chamber body 100. When the process chamber needs maintenance, the cleaning tray 400 is introduced into the chamber body 100, and the base 200 is used to carry the cleaning tray 400. The cleaning tray 400 is provided with a plurality of spray holes 410 penetrating along the thickness direction thereof. The pressure ring 300 is used to fix the cleaning tray 400 on the base 200 to prevent the cleaning tray 400 from sliding.

[0030] There is a gap 600 between the cleaning plate 400 and the base 200, and the gap 600 is connected to the liquid inlet pipeline 510 and the spray hole 410. The liquid inlet pipeline 510 is used to pass the cleaning liquid, and the cleaning liquid can be sprayed through the plurality of spray holes 410 to cover at least part of the medium window 900. At this time, when the cleaning liquid is passed into the liquid inlet pipeline 510, the cleaning liquid passes through the liquid inlet pipeline 510 into the gap 600 and then sprays out through the spray hole 410. The above-mentioned cleaning liquid can be deionized water. Of course, the cleaning liquid can be flexibly selected according to different by-products of the cleaning reaction.

[0031] In the embodiment disclosed in the present application, the cleaning liquid is introduced into the liquid inlet pipeline 510, and the cleaning liquid enters the gap 600 and is sprayed to the top and side of the chamber body 100 through the spray hole 410, thereby flushing the dielectric window 900 and other components in the inner cavity of the chamber body 100. In this solution, the semiconductor process equipment can clean the components in the chamber body 100 without opening the cavity, so the steps of plasma treatment of toxic gas and nitrogen purge of the chamber can be omitted, thereby shortening the maintenance time of the semiconductor process equipment, thereby shortening the maintenance time of the semiconductor process equipment.

[0032] In addition, most of the reaction byproducts in the chamber body 100 can be removed without opening the process chamber, thereby avoiding pollution of the factory environment and protecting the life safety of maintenance personnel.

[0033] In addition, there is no need to use dust-free cloth to wipe the reaction by-products over a large area, which is less likely to cause a fire and reduces the possibility of fire accidents.

[0034] In the above embodiment, a first valve 511 may be provided on the liquid inlet pipeline 510 , and the first valve 511 is used to control the on-off of the liquid inlet pipeline 510 .

[0035] In the above embodiment, the base 200 is used to carry the tray, and the tray is used to carry the wafer. The above-mentioned pressure ring 300 can also be used to cover the tray. When the tray is carried on the base 200, the pressure ring 300 can cover the tray to prevent the tray from sliding during the process.

[0036] In another optional embodiment, the plurality of spray holes 410 may be distributed in a plurality of circles, and the spray holes 410 on the same circle may be evenly distributed and have the same shape. The same shape here means that the cross-sectional area, inclination angle, etc. of the inlet and outlet of the spray holes 410 are the same. In this solution, the outer structure and inclination angle of the spray holes 410 on the same circle are the same, so that within the range covered by the same circle, the pressure and height of the cleaning liquid sprayed from the spray holes 410 are the same, thereby ensuring the uniformity of cleaning of the spray holes 410 on the same circle, thereby achieving better cleaning performance of the process chamber.

[0037] In another optional embodiment, if Figure 2 As shown, the plurality of spray holes 410 are evenly distributed along the radial direction of the cleaning disk 400. At this time, the plurality of spray holes 410 can be evenly distributed from the center of the cleaning disk 400 to the edge of the cleaning disk 400, that is, the plurality of spray holes 410 are arranged to extend radially from the inside to the outside, thereby further increasing the coverage of the cleaning disk 400 and further improving the cleaning performance of the process chamber.

[0038] In another optional embodiment, in the direction extending from the center to the edge of the cleaning disk 400, the angle between the axis of the spray hole 410 and the plane of the cleaning disk 400 and the direction away from the axis gradually decreases. At this time, the multiple spray holes 410 on the cleaning disk gradually tilt from the center of the cleaning disk to the edge of the cleaning disk 400, so that the multiple spray holes 410 are radial. In this solution, the cleaning liquid sprayed from the multiple spray holes 410 of the cleaning disk 400 is radial, thereby further expanding the cleaning range of the process chamber, and further improving the cleaning effect of the process chamber.

[0039] In another optional embodiment, the cross-sectional area of ​​the spray hole 410 gradually decreases from the top surface to the bottom surface of the cleaning plate 400. At this time, the inlet area of ​​the spray hole 410 is small, and the water pressure of the cleaning liquid entering the spray hole 410 is relatively high. The outlet area of ​​the spray hole 410 is large, and the sprayed liquid can diffuse outward. Therefore, this solution can not only increase the water pressure of the cleaning liquid spray, but also increase the spray range, further improving the cleaning effect of the process chamber.

[0040] Optionally, the diameter of the inlet of the spray hole 410 may be between 1.5 mm and 2.5 mm, and the diameter of the outlet of the spray hole 410 may be between 4.5 mm and 5.5 mm. Preferably, the diameter of the inlet of the spray hole 410 may be 2 mm, and the diameter of the outlet may be 5 mm.

[0041] In another optional solution, an annular notch 420 may be provided along the circumference of the side of the edge of the cleaning disc 400 away from the base 200, and the pressure ring 300 is pressed into the annular notch 420. In this solution, the stacking height of the cleaning disc 400 and the pressure ring 300 is reduced, so the height of the protruding part of the pressure ring 300 relative to the cleaning disc 400 is smaller, so that it is not easy to block the partial spray holes 410 on the edge of the cleaning disc 400, thereby making the cleaning dead angle of the process chamber smaller. In addition, the pressure ring 300 can be pressed against the side wall of the annular notch, so as to avoid side slipping due to the impact force of the cleaning liquid, thereby improving the stability of the cleaning disc.

[0042] In another optional embodiment, the cleaning disc 400 and / or the base 200 may be provided with a sealing groove, which may be arranged around the spray hole 410, and a sealing ring 800 may be arranged in the sealing groove, and the cleaning disc 400 and the base 200 may be sealed to form a cavity through the sealing ring 800. The cavity here is actually the above-mentioned gap, but due to the presence of the sealing ring 800, the edge of the gap 600 is sealed to form a cavity.

[0043] In this solution, the sealing ring 800 can seal the gap, so that the cleaning liquid is not likely to leak from positions other than the spray hole 410, thereby avoiding the waste of the cleaning liquid.

[0044] In addition, the cleaning liquid leaks from the position other than the spray hole 410, and part of the cleaning liquid leaks, thereby reducing the pressure of the cleaning liquid. For this reason, the sealing ring 800 is used to seal the gap so that the cleaning liquid cannot leak from the position other than the spray hole 410. Therefore, the cleaning liquid has a greater pressure, so that the cleaning liquid can be sprayed to the position of the medium window 900, thereby improving the cleaning performance.

[0045] In the above embodiment, when the semiconductor process equipment is performing processes such as etching, the process temperature in the reaction chamber is relatively high, which can easily cause the temperature of the wafer to be relatively high, which can easily cause the wafer to blacken, resulting in a low yield rate of the wafer. To this end, the process chamber can also include a first air inlet line 710, and the first air inlet line 710 can pass through the bottom of the chamber body 100 and communicate with the gap 600 through the connecting channel 210 of the base 200. It should be noted that the gap 600 here is the gap between the base and the cleaning plate, not the gap between the base and the tray. When the first air inlet line 710 introduces gas to adjust the temperature, the tray must be carried on the base 200.

[0046] In this solution, the gas introduced into the first air inlet line 710 has a relatively low temperature, such as helium, which can absorb the temperature on the tray, thereby lowering the temperature of the tray and further lowering the temperature of the wafer, thereby improving the yield rate of the wafer.

[0047] In order to simplify the structure of the process chamber, in another optional embodiment, the liquid inlet pipeline 510 may be connected to the gap through the first air inlet pipeline 710 .

[0048] In this solution, the first air inlet pipeline 710 can assist in introducing the cleaning liquid into the gap 600 , so the liquid inlet pipeline 510 does not need to extend into the chamber body 100 , thereby simplifying the structure of the semiconductor process equipment.

[0049] In addition, the liquid inlet pipeline 510 is connected to the first air inlet pipeline 710 located outside the chamber body 100, and does not need to extend into the chamber body 100. Therefore, the layout of the parts in the chamber body 100 does not need to be changed, and only the liquid inlet pipeline 510 needs to be added to the semiconductor process equipment, which makes the modification of the original semiconductor process equipment less difficult.

[0050] In addition, the chamber body 100 does not need to have an opening for inserting the liquid inlet pipeline 510 , so that the number of openings of the chamber body 100 is small, thereby improving the sealing performance of the chamber body 100 .

[0051] In the above embodiment, the first air inlet pipeline 710 is provided with a third valve 711, and the third valve 711 is used to control the on-off of the first air inlet pipeline 710. The connection between the liquid inlet pipeline 510 and the first air inlet pipeline 710 is located between the third valve 711 and the chamber body 100.

[0052] In the above embodiment, the liquid inlet pipeline 510 can be connected to the first air inlet pipeline 710, and the liquid inlet pipeline 510 passes the cleaning liquid into the first air inlet pipeline 710, and then into the gap 600 through the first air inlet pipeline 710. At this time, part of the first air inlet pipeline 710 is used to pass the cleaning liquid.

[0053] In another optional embodiment, the first air inlet pipeline 710 and the liquid inlet pipeline 510 can be used to introduce low-temperature cooling gas, and can also be used to introduce cleaning liquid. In other words, the pipeline for cooling gas in the process chamber can also introduce cleaning liquid, that is, the helium system of the process chamber is used to introduce cleaning liquid.

[0054] In the above embodiment, the process chamber may further include an exhaust pipeline 720 , which is connected to a vacuum pump. The vacuum pump can exhaust the gas in the chamber body 100 through the exhaust pipeline 720 .

[0055] In order to facilitate the discharge of waste liquid after cleaning, in another optional embodiment, the process chamber disclosed in the present application further includes a drainage pipeline 520, which can be arranged at the bottom of the chamber body 100 and communicated with the interior of the chamber body 100. In this solution, a separate pipeline is arranged for drainage, and the drainage pipeline 520 can be connected to the waste liquid treatment device at the factory service end, so as to collect and treat the waste liquid, thereby facilitating the treatment of the waste liquid.

[0056] In addition, the cleaning degree of the process chamber can also be judged by the color of the liquid discharged from the liquid discharge pipeline 520. Specifically, when the color of the liquid discharged from the liquid discharge pipeline 520 is similar to the color of the liquid introduced, it indicates that the cleaning of the process chamber is completed.

[0057] In the above embodiment, the air extraction pipeline 720 is provided with a fourth valve 721, which is used to control the on-off of the air extraction pipeline 720. The liquid discharge pipeline 520 is provided with a second valve 521, which is used to control the on-off of the air extraction pipeline 720.

[0058] In another optional embodiment, the process chamber may further include a second air inlet pipeline 730, and an air inlet hole may be provided on the medium window 900, and the second air inlet pipeline 730 may be connected to the interior of the chamber body 100 through the air inlet hole. In this solution, when the process chamber is undergoing a processing process, the second air inlet pipeline 730 may be used to introduce process gas. In addition, when the process chamber is cleaned, the second air inlet pipeline may be used to introduce gas to balance the air pressure inside the chamber body 100, thereby facilitating the discharge of cleaning waste liquid.

[0059] Optionally, when the process chamber is cleaned, the second air inlet line 730 may be supplied with normal nitrogen or other gases, which is not limited herein.

[0060] Based on the process chamber of any of the above embodiments of the present invention, the embodiment of the present invention further discloses a maintenance method. The process chamber described above can be maintained by the disclosed maintenance method, such as Figure 4 As shown, the maintenance method includes:

[0061] S100 , introducing the cleaning tray 400 onto the base 200 in the chamber body 100 .

[0062] At this time, when the process chamber is cleaned and maintained, the tray is first transferred out of the chamber body 100 . When the tray is transferred out of the chamber body 100 , the cleaning tray 400 is transferred into the chamber body 100 and carried on the base 200 .

[0063] The cleaning tray 400 can be transferred by a tray transfer method. First, the robot transfers the cleaning tray 400 into the chamber body 100 and places it on the raised ejector pins. Then, the ejector pins are lowered to transfer the cleaning tray 400 to the base 200.

[0064] S200 , lower the pressure ring 300 to press the cleaning plate 400 .

[0065] The pressure ring 300 is in a raised position during the transport of the cleaning tray 400. Only when the cleaning tray 400 is carried on the base 200, the pressure ring 300 is lowered and presses the cleaning tray 400 to prevent the cleaning tray 400 from sliding.

[0066] S300 , the chamber body 100 is filled with gas so that the gas pressure inside the chamber body 100 is the same as the atmospheric pressure outside the chamber body 100 .

[0067] During the transportation of the cleaning tray 400, the chamber body 100 is always in a vacuum state. At this time, the air pressure in the chamber body 100 needs to be the same as the external air pressure so that the valve of the liquid inlet pipeline 510 can be opened. Specifically, nitrogen is introduced into the second air inlet pipeline 730. The second air inlet pipeline 730 is provided with a fifth valve 731, which is used to control the opening and closing of the second air inlet pipeline 730.

[0068] S400 , a cleaning liquid with a preset pressure is introduced into the liquid inlet pipeline 510 to clean at least a portion of the medium window 900 .

[0069] At this time, the cleaning liquid needs to have a certain pressure so that the cleaning liquid can be sprayed to the position to be cleaned. Optionally, the preset pressure can be greater than 2Mpa. Of course, the preset pressure can be flexibly selected according to the height of the cleaning plate 400 from the medium window 900.

[0070] In addition, by setting a preset pressure according to actual working conditions, the cleaning liquid sprayed from the spray hole 410 can also clean the entire medium window 900 and part of the side wall of the chamber body 100 .

[0071] In this solution, the components in the process chamber can be cleaned without opening the chamber, thereby eliminating steps such as plasma treatment of poisonous gases and nitrogen purge of the chamber, thereby compressing the maintenance time of the process chamber, thereby shortening the maintenance time of the process chamber.

[0072] In the above embodiment, the fourth valve 721 should be closed before step S300 to cut off the exhaust pipe 720. In addition, after step S300, the second valve 521 should be opened to allow the cleaning liquid to be discharged in time and not easily accumulated in the chamber body 100.

[0073] In another optional embodiment, whether cleaning is completed can be determined by the color of the discharged liquid.

[0074] At this time, when the color of the liquid discharged from the drain pipe 520 is close to the color of the liquid introduced, it means that the process chamber is cleaned. When the color of the liquid discharged from the drain pipe 520 is greatly different from the color of the liquid introduced, it means that the process chamber is not cleaned yet, and it is necessary to continue to introduce cleaning liquid for cleaning until the color of the discharged liquid is close to the color of the liquid introduced.

[0075] After flushing the chamber body 100 for a period of time, the chamber can be opened. At this time, since most of the reaction byproducts have been washed clean, the harm to the operator after opening the chamber is relatively small. After opening the chamber, some residual byproducts and dead corners that have not been flushed can be cleaned. Then the chamber is closed, and oxygen is introduced after the chamber is closed. The oxygen is ionized for a period of time, and then the leak rate is tested to see if it is qualified. When the leak rate is qualified, the process is started and the maintenance is completed.

[0076] Based on the process chamber of any of the above embodiments of the present application, an embodiment of the present application further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment has the process chamber of any of the above embodiments.

[0077] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0078] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims

1. A process chamber, applied to semiconductor process equipment, comprising a chamber body (100), a base (200) arranged in the chamber body (100), and a dielectric window (900) arranged on the top of the chamber body (100), characterized in that: The process chamber further comprises a pressure ring (300), a cleaning plate (400) and a liquid inlet pipeline (510); during cleaning and maintenance, the base (200) is used to carry the cleaning plate (400); during cleaning and maintenance of the process chamber, a tray for carrying wafers can be transferred out of the chamber body (100); when the tray is transferred out of the chamber body (100), the cleaning plate (400) can be transferred into the chamber body (100) and carried on the base (200); the cleaning plate (400) is provided with a plurality of A plurality of spray holes (410) passing through in the thickness direction, the pressure ring (300) being used to fix the cleaning disc (400) to the base (200), a gap (600) being provided between the cleaning disc (400) and the base (200), the gap (600) being connected to the liquid inlet pipeline (510) and the spray holes (410), the liquid inlet pipeline (510) being used to introduce cleaning liquid, and the cleaning liquid can be sprayed through the plurality of spray holes (410) to cover at least a portion of the medium window (900); The process chamber further comprises a first air inlet pipeline (710), wherein the first air inlet pipeline (710) passes through the bottom of the chamber body (100) and the connecting channel (210) of the base (200); the liquid inlet pipeline (510) is connected to the gap (600) through the first air inlet pipeline (710); the first air inlet pipeline (710) is used to introduce cooling gas to reduce the temperature of the tray; the liquid inlet pipeline (510) is connected to the first air inlet pipeline (710) located outside the chamber body (100).

2. The process chamber according to claim 1, characterized in that: The plurality of spray holes (410) are distributed in a plurality of circles, and the spray holes (410) on the same circle are evenly distributed and have the same shape.

3. The process chamber according to claim 2, characterized in that: The plurality of spray holes (410) are evenly distributed along the radial direction of the cleaning disc (400).

4. The process chamber according to claim 1, characterized in that: In the direction of the cleaning disc (400) extending from the center to the edge thereof, the angle between the axis of the spray hole (410) and the plane where the cleaning disc (400) is located and the direction away from the axis gradually decreases.

5. The process chamber according to claim 1, characterized in that: In the direction from the top surface to the bottom surface of the cleaning plate (400), the cross-sectional area of ​​the spray hole (410) gradually decreases.

6. The process chamber according to claim 1, characterized in that: An annular notch (420) is provided along the circumference of the edge of the cleaning plate (400) on a side away from the base (200), and the pressure ring (300) is pressed into the annular notch (420).

7. The process chamber according to claim 1, characterized in that: The cleaning disc (400) and / or the base (200) are provided with a sealing groove, the sealing groove is arranged around the spray hole (410), a sealing ring (800) is arranged in the sealing groove, and the cleaning disc (400) and the base (200) are sealed by the sealing ring (800) to form a cavity.

8. The process chamber according to any one of claims 1 to 7, characterized in that: The process chamber further comprises a liquid drainage pipeline (520), wherein the liquid drainage pipeline (520) is arranged at the bottom of the chamber body (100) and is in communication with the interior of the chamber body (100).

9. The process chamber according to claim 8, characterized in that: The process chamber further comprises a second air inlet pipeline (720), an air inlet hole is provided on the medium window (900), and the second air inlet pipeline (720) is connected with the interior of the chamber body (100) through the air inlet hole.

10. A maintenance method, characterized in that: Applied to the process chamber according to any one of claims 1 to 9, the maintenance method comprises: Inserting the cleaning plate (400) onto the base (200) in the chamber body (100); Lowering the pressure ring (300) to press the cleaning plate (400); The chamber body (100) is filled with gas so that the gas pressure inside the chamber body (100) is the same as the atmospheric pressure outside the chamber body (100); A cleaning liquid with a preset pressure is introduced into the liquid inlet pipeline (510) to clean at least a portion of the medium window (900).

11. The maintenance method according to claim 10, characterized in that: Based on the process chamber according to claim 8, the maintenance method further comprises: The color of the discharged liquid can be used to determine whether the cleaning is complete.

12. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 9.

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