Process chambers and semiconductor processing equipment

Abstract

The present invention provides a process chamber and semiconductor processing equipment. The process chamber includes a chamber, a base disposed in the chamber, and a plurality of cantilevers. The plurality of cantilevers are spaced around the base along the circumference of the base, and each cantilever is connected between the sidewall of the base and the sidewall of the chamber. The process chamber is characterized in that it also includes a lining structure, which surrounds the sidewall of the chamber and the sidewall of the base at intervals, and is provided with a grid hole for gas to pass through; the first end of the lining structure is spaced outside the sidewall of the base and is electrically insulated from the base and the cantilever; the second end of the lining structure is not lower than the top of the sidewall of the chamber, and the second end is provided with an extension structure, which extends from the second end to the chamber or the cantilever and is electrically connected thereto. The process chamber and semiconductor processing equipment provided by the present invention can improve the current uniformity at different positions on the surface of the base, thereby improving process uniformity.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a process chamber and semiconductor processing equipment. Background Art

[0002] With the advancement of semiconductor manufacturing processes, the requirements for uniformity in semiconductor etching processes are becoming increasingly stringent. The coil on the upper electrode of an ICP etching system generates plasma within the chamber through inductive coupling. This plasma reaches the wafer surface through diffusion, electromigration, and convection. Simultaneously, radio frequency power of a specific frequency is applied to the lower electrode. This power acts on the plasma on the wafer surface through capacitive coupling, thereby controlling the energy of the ions reaching the wafer surface.

[0003] The main factors affecting the uniformity of the etching process include: plasma uniformity on the wafer surface, uniformity of the ion energy distribution controlled by the lower electrode loop, and uniformity of the density distribution of etching reactants reaching the wafer surface. A typical lower electrode loop consists of an electrostatic chuck, liner, cantilever, and chamber wall located within the chamber. The RF power of the lower electrode enters the base of the electrostatic chuck through a coaxial cable from the lower electrode matcher, is coupled into the plasma, and then returns to the matcher through the liner and cantilever. Therefore, the ground loop of the liner has a significant impact on the uniformity of the electromagnetic field in the lower electrode loop, which in turn affects the ion energy reaching the wafer surface and the uniformity of the plasma density on the wafer surface, thereby affecting the uniformity of the etching process.

[0004] However, in current process chambers, the upper end of the liner is electrically connected to the chamber wall, while the lower end of the liner is electrically connected to the multiple cantilevers surrounding the base. In this case, the RF power output from the matcher is introduced into the electrostatic chuck via a coaxial cable passing through the cantilevers, then coupled into the chamber interior, then passed through the liner from its lower end into the cantilevers, and finally returned to the matcher. This leads to the following problems in practical applications:

[0005] Since the current on the electrostatic chuck will seek the shortest path to flow to the lining, the path of the current in the center area of ​​the electrostatic chuck to flow to the lining is longer than the path of the current in the edge area. The longer the current transmission path, the greater the corresponding impedance. This causes the current in the center area of ​​the electrostatic chuck to be smaller than the current in the edge area, resulting in uneven current on the surface of the electrostatic chuck, which affects the process uniformity. Summary of the Invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber and a semiconductor processing equipment, which can improve the current uniformity at different positions on the surface of the base, thereby improving the process uniformity.

[0007] To achieve the object of the present invention, a process chamber is provided, comprising a chamber body, a susceptor and a plurality of cantilevers disposed in the chamber body, wherein the plurality of cantilevers are spaced apart around the susceptor along the circumference of the susceptor, and each cantilever is connected between a sidewall of the susceptor and a sidewall of the chamber body, and further comprising a lining structure, wherein the lining structure surrounds the sidewall of the chamber body and the sidewall of the susceptor at intervals, and the lining structure is provided with grid holes for gas passage;

[0008] The first end of the lining structure is located at intervals outside the side wall of the base and is electrically insulated from the base and the cantilever; the second end of the lining structure is not lower than the top of the side wall of the cavity, and the second end is provided with an extension structure, which extends from the second end to the cavity or the cantilever and is electrically connected thereto.

[0009] Optionally, the lining structure includes a first lining ring, the first end of the first lining ring being located at intervals outside the side wall of the base as the first end of the lining structure, and being electrically insulated from the base and the cantilever; the second end of the first lining ring being provided with the extension structure as the second end of the lining structure; and the gate hole including a first gate hole provided on the first lining ring.

[0010] Optionally, the extension structure includes an annular flange protruding relative to the outer peripheral surface of the first liner ring, the annular flange is superimposed on the top surface of the side wall of the cavity, and is fixedly connected to the cavity and electrically conductive.

[0011] Optionally, the extension structure includes a second liner ring, which is concentrically arranged with the first liner ring and located between the first liner ring and the side wall of the cavity, and spaced apart from the two. The first end of the second liner ring is connected to the second end of the first liner ring and is electrically conductive. The second end of the second liner ring is fixedly connected to the cavity and is electrically conductive. The connection position of the second end of the second liner ring and the cavity is located between the top surface of the side wall of the cavity and the cantilever.

[0012] Optionally, the extension structure includes a second liner ring, which is concentrically arranged with the first liner ring and located between the first liner ring and the side wall of the cavity, and spaced apart from the two. The first end of the second liner ring is connected to the second end of the first liner ring and is electrically conductive, and the second end of the second liner ring is fixedly connected to the cantilever and is electrically conductive.

[0013] Optionally, the connection position between the second end of the second backing ring and the cantilever is located outside the end of the gate hole close to the side wall of the cavity.

[0014] Optionally, the connection position between the second end of the second backing ring and the cantilever is located on the inner side of one end of the first gate hole close to the side wall of the base, and the gate hole also includes a second gate hole arranged on the second backing ring, and the second gate hole and the first gate hole have their orthographic projections on the horizontal plane overlapping with each other.

[0015] Optionally, the process chamber further includes a liner grounding ring, which is arranged on the outside of the base and is fixedly connected to the second end of the cantilever and the second liner ring respectively, and is electrically conductive.

[0016] Optionally, the sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring;

[0017] The first gate hole is arranged on the first horizontal side wall.

[0018] Optionally, an annular step portion is provided between the outer peripheral edge of the first horizontal side wall and the lower end edge of the first vertical side wall, the annular step portion comprising a horizontal step side wall and a vertical step side wall, wherein the horizontal step side wall is higher than the first horizontal side wall; and the inner peripheral edge of the horizontal step side wall is integrally connected to the upper end edge of the vertical step side wall; the outer peripheral edge of the horizontal step side wall is integrally connected to the lower end edge of the first vertical side wall; and the lower end edge of the vertical step side wall is integrally connected to the outer peripheral edge of the first horizontal side wall;

[0019] The gate hole further includes a step gate hole provided on the side wall of the vertical step, and an opening of the step gate hole is provided corresponding to an opening of the first gate hole and is in communication with each other.

[0020] Optionally, the sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring; the first gate hole is provided on the first horizontal sidewall;

[0021] The side walls of the second liner ring include a second horizontal side wall, a third horizontal side wall, a second vertical side wall and a third vertical side wall, wherein the second horizontal side wall is lower than the first horizontal side wall, and the second vertical side wall is located on the outside of the first vertical side wall; the outer peripheral edge of the second horizontal side wall is connected to the lower end edge of the second vertical side wall; the inner peripheral edge of the second horizontal side wall is connected to the upper end edge of the third vertical side wall, and the lower end edge of the third vertical side wall is the second end of the second liner ring, and the upper end edge of the second vertical side wall is connected to the outer peripheral edge of the third horizontal side wall; the inner peripheral edge of the third horizontal side wall is connected to the upper end edge of the first vertical side wall.

[0022] Optionally, the sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring; the first gate hole is provided on the first horizontal sidewall;

[0023] The side walls of the second liner ring include a second horizontal side wall, a third horizontal side wall, a second vertical side wall and a third vertical side wall, wherein the second horizontal side wall is lower than the first horizontal side wall, and the second vertical side wall is located on the outside of the first vertical side wall; the outer peripheral edge of the second horizontal side wall is connected to the lower end edge of the second vertical side wall; the inner peripheral edge of the second horizontal side wall is connected to the upper end edge of the third vertical side wall, and the lower end edge of the third vertical side wall is the second end of the second liner ring, and the upper end edge of the second vertical side wall is connected to the outer peripheral edge of the third horizontal side wall; the inner peripheral edge of the third horizontal side wall is connected to the upper end edge of the first vertical side wall; the second gate hole is arranged on the second horizontal side wall.

[0024] Optionally, the radial spacing between the first backing ring and the second backing ring is less than or equal to 20 mm.

[0025] Optionally, the process chamber further includes an insulating connection ring with insulation and thermal conductivity, and the insulating connection ring is connected between the first end of the first backing ring and the cantilever.

[0026] Optionally, the material of the insulating connecting ring includes at least one of aluminum nitride, boron nitride and aluminum oxide.

[0027] Optionally, a radial distance between the first end of the first liner ring and the side wall of the base is greater than or equal to 1 mm and less than or equal to 5 mm.

[0028] Optionally, the wall thickness of the first liner ring is the same as the wall thickness of the extension structure, and the wall thickness is greater than or equal to 7 mm.

[0029] As another technical solution, the present invention further provides a semiconductor processing equipment, including the above-mentioned process chamber provided by the present invention.

[0030] The present invention has the following beneficial effects:

[0031] The process chamber provided by the present invention has a first end of a lining structure spaced apart from the sidewall of the base and electrically insulated from the base and cantilever; a second end of the lining structure is not lower than the top of the sidewall of the cavity, and an extension structure is provided on the second end. The extension structure extends from the second end to the cavity or the cantilever and is electrically conductive therewith. By electrically insulating the lining structure from the base and the cantilever, the electrical path between the lining and the two can be disconnected, forcing the current on the base to first flow through the lining to the second end, which is not lower than the top of the sidewall of the cavity, and then flow through the extension structure to the cavity or the cantilever, thereby extending the current transmission path. Furthermore, the length difference between the path of current flowing from the central area of ​​the base to the lining and the path of current flowing from the edge area to the lining can be made insignificant, thereby improving the current uniformity at different positions on the surface of the base, and thus improving the process uniformity.

[0032] The semiconductor processing equipment provided by the present invention can improve the current uniformity at different positions on the surface of the base by adopting the above-mentioned process chamber provided by the present invention, thereby improving the process uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 This is a structural diagram of an existing process chamber;

[0034] Figure 2 A partial structural diagram of an existing process chamber;

[0035] Figure 3A A structural diagram of a process chamber provided in accordance with a first embodiment of the present invention;

[0036] Figure 3B A partial structural diagram of a process chamber provided in accordance with a first embodiment of the present invention;

[0037] Figure 4 A partial structural diagram of a process chamber provided in accordance with a second embodiment of the present invention;

[0038] Figure 5A A partial structural diagram of a process chamber provided in accordance with a third embodiment of the present invention;

[0039] Figure 5B A top view of the lining structure used in the third embodiment of the present invention;

[0040] Figure 5CA top view of the lining structure used in the third embodiment of the present invention installed on a cantilever;

[0041] Figure 5D A top view of a liner grounding ring used in a third embodiment of the present invention installed on a cantilever;

[0042] Figure 6A A partial structural diagram of a process chamber provided in accordance with a fourth embodiment of the present invention;

[0043] Figure 6B A diagram of an airflow path in a process chamber according to a fourth embodiment of the present invention;

[0044] Figure 6C A top view of the lining structure used in the fourth embodiment of the present invention;

[0045] Figure 7 The simulation result diagram of the current path on the base;

[0046] Figure 8 The figure is a comparison diagram of the normalized current density distribution curves on the wafer surface of the present invention and the prior art. DETAILED DESCRIPTION

[0047] In order to enable those skilled in the art to better understand the technical solution of the present invention, the process chamber and semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0048] Please also refer to Figure 1 and Figure 2 An existing process chamber includes a cavity 11, multiple cantilevers 12, a base 14, a liner 15, an adapter 16, and a dielectric window 17. The base 14 (e.g., an electrostatic chuck) and the multiple cantilevers 12 are arranged inside the cavity 11, and the multiple cantilevers 12 are arranged around the base 14, and each cantilever 12 is connected between the side wall of the base 14 and the side wall of the cavity 11; the upper end of the liner 15 is superimposed on the top of the cavity 11, and the lower end of the liner 15 is electrically connected to the cantilever 12 through the grounding member 13; the adapter 16 is superimposed on the top of the liner 15, and the dielectric window 17 is arranged on the top of the adapter 16. The cavity 11, the liner 15, the adapter 16, and the dielectric window 17 are sealed and connected to form a vacuum environment inside the cavity 11. A coil 18 is arranged above the dielectric window 17, which is electrically connected to an upper RF power supply (not shown in the figure) through an upper matcher. Moreover, a coaxial cable 20 is passed through the cantilever 12 and is electrically connected to the lower matcher 19 and the base 14, respectively, for transmitting the RF power output from the lower matcher 19 to the base 14. The RF power is then coupled into the plasma by the base 14, and then returns to the lower matcher 19 through the liner 15, the grounding piece 13, and the cantilever 12 in sequence.

[0049] However, since the current on the base 14 will seek the shortest path to flow to the lining 15, the current transmission path is as follows: Figure 2 As shown by the arrow in the figure, the path of the current flowing from the central area of ​​the base 14 to the lining 15 is longer than the path of the current flowing from the edge area to the lining 15. The longer the current transmission path, the greater the corresponding impedance. This causes the current in the central area of ​​the base 14 to be smaller than the current in the edge area, resulting in uneven current on the surface of the base 14, thereby affecting the process uniformity.

[0050] First embodiment

[0051] To solve the above problems, please also refer to Figure 3A and Figure 3B This embodiment further provides a process chamber, comprising a cavity 21 and a base 22 and a plurality of cantilevers 23 disposed in the cavity 21, wherein the base 22 is, for example, an electrostatic chuck. The plurality of cantilevers 23 are distributed around the base 22 at intervals along the circumference of the base 22, and there are, for example, two cantilevers 23, which are symmetrically distributed relative to the axis of the base 22. In addition, each cantilever 23 is connected between the side wall of the base 22 and the side wall of the cavity 21, and a coaxial cable 28 is passed through the cantilever 23, which is electrically connected to the lower matcher (not shown in the figure) and the base 22, respectively, for feeding the RF power output from the lower matcher into the base 22.

[0052] The process chamber also includes a liner structure that is spaced apart and surrounds the sidewalls of the cavity 21 and the sidewalls of the susceptor 22 to protect the sidewalls of the cavity 21 from plasma etching. This liner structure also eliminates uneven current distribution caused by the circumferential spacing of the multiple cantilevers 23. In some optional embodiments, the liner structure includes a first liner ring 24. The first end of the first liner ring 24 (i.e., the end closest to the susceptor 22) serves as the first end of the liner structure and is spaced apart and located outside the sidewall of the susceptor 22. The liner ring is electrically insulated from the susceptor 22 and the cantilevers 23. This prevents current on the susceptor 22 from being directly transferred from the first end of the first liner ring 24 to the cantilevers 23 after entering the first liner ring 24. Optionally, the process chamber also includes an insulating and thermally conductive insulating connecting ring 26 that is connected between the first end of the first liner ring 24 and the cantilevers 23 to electrically insulate them. The insulating connecting ring 26 not only electrically insulates the lining structure from the base and cantilever, but also, due to its thermal conductivity, creates a heat conduction path between the lining structure and the cantilever. This effectively controls the temperature rise of the lining structure, thereby preventing the protective layer on the lining structure from detaching and increasing the service life of the lining structure. The insulating connecting ring 26 is made of at least one of aluminum nitride, boron nitride, and aluminum oxide. This insulating material not only provides electrical insulation but also has excellent thermal conductivity. Of course, in practical applications, the material of the insulating connecting ring 26 is not limited to this; any other material with both insulation and thermal conductivity can be used. Furthermore, embodiments of the present invention do not require the insulating connecting ring 26. Electrical insulation between the first lining ring 24 and the base 22 and cantilever 23 can also be achieved by maintaining a certain distance between the first end of the first lining ring 24 and the base 22 and cantilever 23.

[0053] Furthermore, the liner structure is provided with gate holes for gas passage, including first gate holes 241a provided on the first backing ring 24 for gas passage. For example, process gas enters the chamber 21 from the central nozzle 43 at the top of the process chamber (e.g., the dielectric window 42), then passes through the first backing ring 24 via the first gate holes 241a, and finally exits from the exhaust port 44 at the bottom of the chamber 21. Specifically, the first gate holes 241a are, for example, composed of a plurality of through holes extending through the first backing ring 24. The plurality of through holes are evenly arranged along the circumference of the first backing ring 24 to ensure uniform gas flow. Optionally, each through hole is strip-shaped and extends radially along the first backing ring 24.

[0054] The second end of the first backing ring 24 (i.e., the end closest to the cavity 21) serves as the second end of the lining structure. It is no lower than the top of the sidewall of the cavity 21 to ensure that the first backing ring 24 covers the entire sidewall of the cavity 21, protecting it from plasma etching. Preferably, to better protect the sidewall of the cavity 21, the distance between the lining structure and the sidewall of the cavity 21 should be minimized, for example, to be less than or equal to 1 mm. Furthermore, an extension structure 25 is provided at the second end of the first backing ring 24. This extension structure 25 extends from the second end of the first backing ring 24 to the cavity 21 or the cantilever 23 and is electrically connected thereto.

[0055] In some optional embodiments, such as Figure 3B As shown, the extension structure 25 includes an annular flange protruding from the outer circumference of the first backing ring 24. The annular flange is superimposed on the top surface of the side wall of the cavity 21 and is fixedly connected to the cavity 21 and electrically conductive. In this way, current can be conducted from the second end of the first backing ring 24 to the cavity 21 via the annular flange.

[0056] By making the first end of the first backing ring 24 (i.e., the end close to the base 22) spaced outside the side wall of the base 22 and electrically insulated from the base 22 and the cantilever 23, and at the same time electrically connecting the second end of the first backing ring 24 to the cavity 21 or the cantilever 23 through the extension structure 25, the electrical path between the first backing ring 24 and the base 22 and the cantilever 23 can be disconnected, forcing the current on the base 22 to first flow through the first backing ring 24 to the second end of the first backing ring 24 that is not lower than the top of the cavity side wall, and then flow through the extension structure 25 to the cavity 21 or the cantilever 23, thereby extending the current transmission path. Figure 3A As shown by the arrow in Figure 2 The current transmission path in the prior art is longer, which reduces the difference in length between the current path from the center region of base 22 to first backing ring 24 and the path from the edge region to first backing ring 24. This makes the impedance at different locations on base 22 more consistent, thereby improving the current uniformity at different locations on the surface of base 22 and, in turn, improving process uniformity. Furthermore, by electrically insulating the lining structure from base 22 and cantilever 23, the temperature rise of the lining structure can be effectively controlled, thereby preventing the protective layer on the surface of the lining structure from falling off and increasing the service life of the lining structure.

[0057] In some optional embodiments, such as Figure 3BAs shown, the sidewalls of the first backing ring 24 include a first horizontal sidewall 241 and a first vertical sidewall 242. The outer peripheral edge of the first horizontal sidewall 241 is integrally connected to the lower edge of the first vertical sidewall 242. The inner peripheral edge of the first horizontal sidewall 241 is the first end of the first backing ring 24, and the upper edge of the first vertical sidewall 242 is the second end of the first backing ring 24. Furthermore, a first grating hole 241a is provided on the first horizontal sidewall 241. Preferably, to better protect the sidewalls of the cavity 21, the distance between the first vertical sidewall 242 and the sidewalls of the cavity 21 should be minimized, for example, to be less than or equal to 1 mm.

[0058] With the help of the above-mentioned first horizontal side wall 241 and the first vertical side wall 242, the first vertical side wall 242 can protect the first liner ring 24 from covering the entire side wall of the cavity 21 and protecting it from plasma etching, and the first horizontal side wall 241 can eliminate the current distribution unevenness caused by the circumferential spacing of multiple cantilevers 23, while protecting the side wall of the base 22 from plasma etching.

[0059] In some optional embodiments, an annular boss 243 is provided at one end of the first horizontal sidewall 241 near the base 22, protruding from the lower surface of the first horizontal sidewall 241. The annular boss 243 surrounds the sidewall of the base 22. The annular boss 243 is connected to the insulating connecting ring 26, which helps improve installation convenience and accuracy.

[0060] In some optional embodiments, an annular step portion 27 is provided between the outer peripheral edge of the first horizontal side wall 241 and the lower end edge of the first vertical side wall 242, and the annular step portion 27 includes a horizontal step side wall 271 and a vertical step side wall 272, wherein the horizontal step side wall 271 is higher than the first horizontal side wall 241; and the inner peripheral edge of the horizontal step side wall 271 is connected to the upper end edge of the vertical step side wall 272 as a whole; the outer peripheral edge of the horizontal step side wall 271 is connected to the lower end edge of the first vertical side wall 242 as a whole; the lower end edge of the vertical step side wall 272 is connected to the outer peripheral edge of the first horizontal side wall 241 as a whole; and the lining structure's grid hole also includes a step grid hole 272a provided on the vertical step side wall 272, the opening of the step grid hole 272a is provided corresponding to the opening of the first grid hole 241a (i.e., the through hole), and is connected to each other.

[0061] Optionally, the step-gate holes 272a are composed of, for example, multiple through-holes extending through the vertical step sidewall 272. The multiple through-holes are evenly arranged along the circumference of the vertical step sidewall 272 to ensure uniform airflow. Optionally, the through-holes of each step-gate hole 272a are strip-shaped and extend radially along the vertical step sidewall 272. Furthermore, the multiple through-holes of the step-gate holes 272a are the same in number as the multiple through-holes of the first gate holes 241a, and are connected one-to-one. The step-gate holes 272a help improve gas flow and uniformity.

[0062] In some optional embodiments, the top of each cantilever 23 is lower than the upper surface of the base 22, and the height difference is about 80 mm; the upper surface of the first horizontal side wall 241 is lower than the upper surface of the base 22, and the height difference is about 40 mm; the axial height of the insulating connecting ring 26 is about 30 mm; the spacing between the above-mentioned annular boss 243 and the side wall of the base 22 is about 40 mm.

[0063] In some optional embodiments, the radial distance between the first end of the first backing ring 24 and the sidewall of the base 22 is greater than or equal to 1 mm and less than or equal to 5 mm, preferably 1 mm. This arrangement can better protect the sidewall of the base 22 from plasma etching.

[0064] In some optional embodiments, the wall thickness of the first liner ring 24 is the same as the wall thickness of the extension structure 25. For example, the wall thickness of the liner ring structure, the wall thickness of the annular step portion 27, and the wall thickness of the extension structure 25 are all the same, and the wall thickness is greater than or equal to 7 mm, preferably about 10 mm. In this way, it can be ensured that the maximum deformation of the lining structure under the action of gravity is less than 0.01 mm, thereby ensuring that the lining structure has sufficient strength and will not produce large deformation. Through experiments, it was found that when the wall thickness is 6 mm, the maximum deformation of the lining structure under the action of gravity is 0.012 mm; when the wall thickness is 7 mm, the maximum deformation of the lining structure under the action of gravity is 0.00971 mm, which can meet the process requirements for the strength of the lining structure.

[0065] It should be noted that the side wall of the first backing ring 24 is not limited to the structure of the above embodiment, and the embodiment of the present invention has no special limitation on this.

[0066] Second embodiment

[0067] Compared to the first embodiment, the process chamber provided in this embodiment also has a liner structure including a first liner ring 24. The second end of the first liner ring 24 (i.e., the end closest to the cavity 21) is no lower than the top of the sidewall of the cavity 21 to ensure that the first liner ring 24 can cover the entire sidewall of the cavity 21 and protect it from plasma etching. This embodiment differs from the first embodiment in that the extension structure is different.

[0068] Specifically, if Figure 4 As shown, an extension structure 25' is provided at the second end of the first backing ring 24. The extension structure 25' includes a second backing ring. The second backing ring is arranged concentrically with the first backing ring 24 and is located between the first backing ring 24 and the sidewall of the cavity 21, and is spaced apart from both. Preferably, to better protect the sidewall of the cavity 21, the distance between the second backing ring and the sidewall of the cavity 21 should be minimized, for example, less than or equal to 1 mm.

[0069] The first end of the second backing ring is connected to the second end of the first backing ring 24 and is electrically conductive thereto. The second end of the second backing ring is fixedly connected to the cavity 21 and is electrically conductive thereto. Furthermore, the connection between the second end of the second backing ring and the cavity 21 is located between the top surface of the sidewall of the cavity 21 and the cantilever 23. In this way, current on the susceptor 22 first flows through the first backing ring 24 to the second end of the first backing ring 24, which is not lower than the top of the cavity sidewall, and then flows through the second backing ring of the extension structure 25' to the cavity 21. This also extends the current transmission path, thereby improving current uniformity at different locations on the surface of the susceptor 22 and, in turn, improving process uniformity.

[0070] It should be noted that in this embodiment, only the second end of the second lining ring is fixedly connected to the cavity 21 of the lining structure as a whole, while the other parts of the lining structure have no contact with the cavity 21 and the cantilever 23. In this case, the other parts of the lining structure are allowed to produce a certain degree of free deformation.

[0071] It should also be noted that in this embodiment, the first end of the first backing ring 24 is suspended in the air. However, the present invention is not limited to this embodiment. For example, the process chamber may further include the insulating connecting ring 26 used in the first embodiment. The insulating connecting ring 26 is connected between the first end of the first backing ring 24 and the cantilever 23 to electrically insulate the two. The structure and function of the insulating connecting ring 26 are the same as those in the first embodiment and will not be further described here.

[0072] In some optional embodiments, the above-mentioned second liner ring includes a second horizontal side wall 251, a third horizontal side wall 253, and a second vertical side wall 252, wherein the second horizontal side wall 251 is higher than the top of the side wall of the cavity 21, and the inner peripheral edge of the second horizontal side wall 251 is connected to the upper end edge of the first vertical side wall 242; the outer peripheral edge of the second horizontal side wall 251 is connected to the upper end edge of the second vertical side wall 252; the inner peripheral edge of the third horizontal side wall 253 is connected to the lower end edge of the second vertical side wall 252; the outer peripheral edge of the third horizontal side wall 253 is fixedly connected to the cavity 21, and the connection position is located between the top surface of the side wall of the cavity 21 and the cantilever 23.

[0073] In some optional embodiments, the radial distance between the first liner ring 24 and the second liner ring, that is, the radial distance between the first vertical sidewall 242 and the second vertical sidewall 252 is less than or equal to 20 mm. In this way, the liner structure can be guaranteed to have sufficient mechanical strength.

[0074] Other structures and functions of the process chamber provided in this embodiment are the same as those of the first embodiment described above and will not be described again here.

[0075] Third embodiment

[0076] Compared to the second embodiment, the process chamber provided in this embodiment also has a liner structure including a first liner ring 24. The second end of the first liner ring 24 (i.e., the end closest to the cavity 21) is no lower than the top of the sidewall of the cavity 21 to ensure that the first liner ring 24 can cover the entire sidewall of the cavity 21 and protect it from plasma etching. This embodiment differs from the second embodiment in that the extension structure is different.

[0077] Specifically, if Figure 5A and Figure 5B As shown, the second end of the first liner ring 24 is provided with an extension structure 25", which includes a second liner ring. The second liner ring is concentrically arranged with the first liner ring 24 and is located between the first liner ring 24 and the side wall of the cavity 21, and is spaced apart from the two. The first end of the above-mentioned second liner ring is connected to the second end of the first liner ring 24 and is electrically conductive. The second end of the above-mentioned second liner ring is fixedly connected to the cantilever 23 and is electrically conductive. The connection position of the second end of the above-mentioned second liner ring and the cantilever 23 is located outside one end of the gate hole (including the first gate hole 241a) of the lining structure close to the side wall of the cavity 21.

[0078] In this way, the current on the base 22 first flows through the first liner ring 24 to the second end of the first liner ring 24 which is not lower than the top of the cavity side wall, and then flows through the second liner ring of the extension structure 25" to the cantilever 23. The current transmission path can also be extended, thereby improving the current uniformity at different positions on the surface of the base 22, and further improving the process uniformity. Moreover, by making the connection position between the second end of the second liner ring of the above-mentioned extension structure 25" and the cantilever 23 be located outside one end of the gate hole (including the first gate hole 241a) of the lining structure close to the side wall of the cavity 21, the second liner ring can avoid the first gate hole 241a, thereby preventing the second liner ring from obstructing the flow of gas through the first gate hole 241a.

[0079] In some optional embodiments, the process chamber further includes a liner grounding ring 29, which is located outside one end of the gate hole (including the first gate hole 241a) near the sidewall of the chamber body 21 and is fixedly connected to the cantilever 23. The liner grounding ring 29 not only achieves a fixed connection between the second end of the second liner ring and the cantilever 23, but also achieves electrical conduction between the two.

[0080] Moreover, if Figure 5C As shown, the second liner ring of the extension structure 25" is provided with a plurality of first mounting holes evenly arranged along its circumference, and each first mounting hole passes through the above-mentioned second liner ring in the vertical direction; a plurality of first threaded holes are provided on the liner grounding ring 29, and the number of the first threaded holes is the same as the number of the above-mentioned first mounting holes, and they are arranged one-to-one. In addition, the process chamber also includes a plurality of first screws 31, and the number of the first screws 31 is the same as the number of the above-mentioned first mounting holes, and each first screw 31 passes through each first mounting hole and is connected to the first threaded hole in a one-to-one correspondence, thereby achieving a fixed connection between the second end of the second liner ring and the liner grounding ring 29.

[0081] In some optional embodiments, the radial distance between the circumference of the first screw 31 and the side wall of the cavity 21 may be about 30 mm.

[0082] In some optional embodiments, a plurality of first through holes are provided on the first backing ring 24. The number of the first through holes is the same as the number of the first mounting holes, and the first through holes are provided in a one-to-one correspondence, so as to allow the first screw 31 to pass through the first backing ring 24 from top to bottom when the first screw 31 is installed. This facilitates the installation of the first screw 31.

[0083] In some optional embodiments, such as Figure 5D As shown, a plurality of grounding ring mounting holes are provided on the lining grounding ring 29, and a plurality of grounding ring threaded holes are correspondingly provided on the cantilever. The process chamber also includes a plurality of grounding ring screws 32. The number of the grounding ring screws 32 is the same as the number of the above-mentioned grounding ring mounting holes, and each grounding ring screw 32 passes through each grounding ring mounting hole and is connected to the grounding ring threaded hole one by one, thereby realizing a fixed connection between the lining grounding ring 29 and the cantilever 23.

[0084] In some optional embodiments, such as Figure 5A As shown, the side wall of the first liner ring 24 includes a first horizontal side wall 241 and a first vertical side wall 242, wherein the outer peripheral edge of the first horizontal side wall 241 is connected to the lower end edge of the first vertical side wall 242; the inner peripheral edge of the first horizontal side wall 241 is the first end of the above-mentioned first liner ring 24, and the upper end edge of the first vertical side wall 242 is the second end of the above-mentioned first liner ring 24; the above-mentioned first gate hole 241a is arranged on the first horizontal side wall 241.

[0085] With the help of the above-mentioned first horizontal side wall 241 and the first vertical side wall 242, the first vertical side wall 242 can protect the first liner ring 24 from covering the entire side wall of the cavity 21 and protecting it from plasma etching, and the first horizontal side wall 241 can eliminate the current distribution unevenness caused by the circumferential spacing of multiple cantilevers 23, while protecting the side wall of the base 22 from plasma etching.

[0086] Moreover, the side walls of the second liner ring of the extension structure 25" include a second horizontal side wall 256, a third horizontal side wall 254, a second vertical side wall 255 and a third vertical side wall 257, wherein the second horizontal side wall 256 is lower than the first horizontal side wall 241, and the second vertical side wall 255 is located on the outside of the first vertical side wall 242; the outer peripheral edge of the second horizontal side wall 256 is connected to the lower end edge of the second vertical side wall 255 as a whole; the inner peripheral edge of the second horizontal side wall 256 is connected to the upper end edge of the third vertical side wall 257 as a whole, and the lower end edge of the third vertical side wall 257 is the second end of the above-mentioned second liner ring, and is fixedly connected to the inner liner grounding ring 29. The upper end edge of the second vertical side wall 255 is connected to the outer peripheral edge of the third horizontal side wall 254 as a whole; the inner peripheral edge of the third horizontal side wall 254 is connected to the upper end edge of the first vertical side wall 242 as a whole.

[0087] It should be noted that, in this embodiment, only the second end of the second lining ring is fixedly connected to the cantilever 23 through the lining grounding ring 29, while the other parts of the lining structure have no contact with the cavity 21 and the cantilever 23. In this case, the other parts of the lining structure are allowed to produce a certain degree of free deformation.

[0088] It should be noted that the sidewall of the second backing ring is not limited to the structure of the above embodiment, and the present invention has no particular restrictions on this. In addition, the manner in which the second end of the second backing ring is fixedly connected to the cantilever 23 is not limited to the structure of the above embodiment, and the present invention has no particular restrictions on this.

[0089] Other structures and functions of the process chamber provided in this embodiment are the same as those of the first and second embodiments described above and will not be described again here.

[0090] Fourth embodiment

[0091] The process chamber provided in this embodiment is different from the third embodiment described above in that: Figure 6AAs shown, the connection position between the second end of the second liner ring of the extension structure 25" and the cantilever 23 is located on the inner side of one end of the first grid hole 241a close to the side wall of the base 22, and the grid holes of the lining structure also include a second grid hole 241b provided on the above-mentioned second liner ring (i.e., the second horizontal side wall 256'), and the orthographic projection of the second grid hole 241b and the first grid hole 241a on the horizontal plane coincide with each other.

[0092] By providing the second gate hole 241b on the second backing ring (ie, the second horizontal side wall 256'), the second backing ring can also avoid the first gate hole 241a, thus preventing the second backing ring from obstructing the flow of gas through the first gate hole 241a. Figure 6B As shown, the process gas enters the chamber 21 from the central nozzle at the top of the process chamber (e.g., dielectric window), then passes through the first liner ring 24 and the second liner ring through the first gate hole 241a and the second gate hole 241b in sequence, and finally is discharged from the exhaust port at the bottom of the chamber 21. The gas flow direction is as shown in FIG. Figure 6B As shown by the arrow in .

[0093] In some optional embodiments, such as Figure 6A and Figure 6C As shown, the process chamber further includes a liner grounding ring 29, which is located inside one end of the sidewall of the first grid hole 241a near the base 22 and is fixedly connected to the cantilever 23. The method of fixing the liner grounding ring 29 to the cantilever 23 is the same as that of the third embodiment described above, with only the connection position being different.

[0094] Furthermore, the second liner ring is provided with a plurality of second mounting holes evenly arranged along its circumference, and each second mounting hole passes through the second liner ring in the vertical direction; a plurality of second threaded holes are provided on the liner grounding ring 29, and the number of the second threaded holes is the same as the number of the second mounting holes, and they are provided in a one-to-one correspondence. Figure 6C As shown, the process chamber also includes a plurality of second screws 33, the number of which is the same as the number of the above-mentioned second mounting holes, and each second screw 33 passes through each of the above-mentioned second mounting holes and is connected to the above-mentioned second threaded holes one by one, thereby realizing a fixed connection between the second liner ring and the inner liner grounding ring 29.

[0095] In some optional embodiments, a plurality of second through holes are provided on the second liner ring. The number of the second through holes is the same as the number of the second mounting holes, and they are arranged one-to-one correspondingly, so as to allow the second screw 33 to pass through the first liner ring 24 from top to bottom when the second screw 33 is installed, thereby improving the installation convenience of the second screw 33.

[0096] In some optional embodiments, the side wall of the first liner ring 24 includes a first horizontal side wall 241 and a first vertical side wall 242, wherein the outer peripheral edge of the first horizontal side wall 241 is connected to the lower end edge of the first vertical side wall 242; the inner peripheral edge of the first horizontal side wall 241 is the first end of the above-mentioned first liner ring 24, and the upper end edge of the first vertical side wall 242 is the second end of the above-mentioned first liner ring 24; the above-mentioned first gate hole 241a is arranged on the first horizontal side wall 241.

[0097] With the help of the above-mentioned first horizontal side wall 241 and the first vertical side wall 242, the first vertical side wall 242 can protect the first liner ring 24 from covering the entire side wall of the cavity 21 and protecting it from plasma etching, and the first horizontal side wall 241 can eliminate the current distribution unevenness caused by the circumferential spacing of multiple cantilevers 23, while protecting the side wall of the base 22 from plasma etching.

[0098] Moreover, the sidewalls of the second liner ring of the extension structure 25" include a second horizontal sidewall 256', a third horizontal sidewall 254, a second vertical sidewall 255 and a third vertical sidewall 257. The structures of these sidewalls are the same as those in the third embodiment and are not repeated here.

[0099] Figure 7 The figure is a simulation result diagram of the current path of the process chamber on the base provided by the third embodiment of the present invention. Figure 7 As shown, the current flow direction at different positions above the base corresponding to the base is basically consistent, thereby improving process uniformity. Figure 8 The comparison diagram of the normalized current density distribution curve of the wafer surface of the present invention and the prior art is shown in FIG. Figure 8 As shown, the process chamber provided by the third embodiment of the present invention has an effectively improved current density uniformity of about 1% compared to the prior art.

[0100] In summary, the process chamber provided by each of the above-mentioned embodiments of the present invention has a first end of a lining structure spaced apart from the outside of the sidewall of the base and electrically insulated from the base and the cantilever; a second end of the lining structure is not lower than the top of the sidewall of the cavity, and an extension structure is provided on the second end, which extends from the second end to the cavity or the cantilever and is electrically conductive therewith. By electrically insulating the lining structure from the base and the cantilever, the electrical path between the lining and the two can be disconnected, forcing the current on the base to first flow through the lining to the second end, which is not lower than the top of the sidewall of the cavity, and then flow through the extension structure to the cavity or the cantilever, thereby extending the current transmission path, and further making the length difference between the path of the current flowing from the central area of ​​the base to the lining and the path of the current flowing from the edge area to the lining not obvious, thereby improving the current uniformity at different positions on the surface of the base, and further improving the process uniformity.

[0101] As another technical solution, the present invention further provides a semiconductor processing equipment, which includes the above-mentioned process chamber provided by the present invention.

[0102] In some optional embodiments, Figure 3A Taking the process chamber shown as an example, it includes a cavity 21, multiple cantilevers 23, a base 22, a lining structure, an adapter 41 and a dielectric window 42, wherein the base 22 (for example, an electrostatic chuck) and the multiple cantilevers 23 are arranged inside the cavity 21, and the multiple cantilevers 23 are arranged around the base 22, and each cantilever 23 is connected between the side wall of the base 22 and the side wall of the cavity 21, and a coaxial cable 28 is passed through the cantilever 23, and the coaxial cable 28 is electrically connected to the lower matcher (not shown in the figure) and the base 22 respectively, so as to feed the RF power output from the lower matcher into the base 22. The adapter 41 is stacked on top of the lining structure, and the dielectric window 42 is arranged on top of the adapter 41. The cavity 21, the lining structure, the adapter 41 and the dielectric window 42 are sealed and connected to form a vacuum environment inside the cavity 21.

[0103] The lining structure includes a first lining ring 24. The first end of the first lining ring 24 (i.e., the end closest to the base 22) serves as the first end of the lining structure and is spaced apart from the sidewall of the base 22 and electrically insulated from the base 22 and the cantilever 23. The second end of the first lining ring 24 (i.e., the end closest to the cavity 21) serves as the second end of the lining structure and is no lower than the top of the sidewall of the cavity 21. An extension structure 25 is provided at the second end of the first lining ring 24. The extension structure 25 extends from the second end of the first lining ring 24 to the cavity 21 or the cantilever 23 and is electrically connected thereto.

[0104] In some optional embodiments, a protective layer is provided on the outer surfaces of the first backing ring 24 and the adapter 41 to protect them from plasma corrosion. This protective layer, for example, is a coating made of a corrosion-resistant material. Furthermore, because the adapter 41 has this protective layer, the second end of the first backing ring 24 only needs to be higher than the lower end of the adapter 41. That is, the vertical distance between the second end of the first backing ring 24 and the dielectric window 42 is smaller than the vertical distance between the lower end of the adapter 41 and the dielectric window 42 to ensure that the plasma does not etch the chamber 21. Specifically, the vertical distance between the lower end of the adapter 41 and the dielectric window 42 (i.e., the axial height of the adapter 41) is generally approximately 70 mm. In this case, the vertical distance between the second end of the first backing ring 24 and the dielectric window 42 can be set to approximately 65 mm. Of course, the specific value of this vertical distance should be adjusted adaptively with changes in the chamber structure design.

[0105] In some optional embodiments, a central nozzle 43 is provided on the dielectric window 42, and an exhaust port 44 is provided at the bottom of the cavity 21. In this case, the process gas enters the cavity 21 from the central nozzle 43, then passes through the grid holes (not shown) on the lining structure, and finally is exhausted from the exhaust port 44 at the bottom of the cavity 21. Of course, the embodiments of the present invention are not limited to this. In actual applications, semiconductor processing equipment may also adopt other gas inlet and outlet structures, and the embodiments of the present invention are not particularly limited to this.

[0106] The semiconductor processing equipment provided by the present invention can improve the current uniformity at different positions on the surface of the base by adopting the above-mentioned process chamber provided by the present invention, thereby improving the process uniformity.

[0107] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber comprising a cavity, a base and a plurality of cantilevers disposed in the cavity, wherein the plurality of cantilevers are distributed around the base at intervals along the circumference of the base, and each cantilever is connected between a side wall of the base and a side wall of the cavity, characterized in that: The device further comprises an inner lining structure, the inner lining structure being spaced around the side wall of the cavity and the side wall of the base, and the inner lining structure being provided with grid holes for gas to pass through; The first end of the lining structure is spaced apart and located outside the side wall of the base and is electrically insulated from the base and the cantilever; the second end of the lining structure is not lower than the top of the side wall of the cavity, and the second end is provided with an extension structure, which extends from the second end to the cavity or the cantilever and is electrically connected thereto; The lining structure includes a first lining ring, wherein a first end of the first lining ring, serving as the first end of the lining structure, is spaced apart and located outside the side wall of the base and is electrically insulated from the base and the cantilever; a second end of the first lining ring, serving as the second end of the lining structure, is provided with the extension structure; The extension structure includes a second liner ring, which is concentrically arranged with the first liner ring and located between the first liner ring and the side wall of the cavity, and is spaced apart from the two. The first end of the second liner ring is connected to the second end of the first liner ring and is electrically conductive.

2. The process chamber according to claim 1, wherein: The gate hole includes a first gate hole provided on the first backing ring.

3. The process chamber according to claim 2, wherein: The second end of the second backing ring is fixedly connected to the cavity and electrically conductive, and the connection position between the second end of the second backing ring and the cavity is located between the top surface of the side wall of the cavity and the cantilever.

4. The process chamber according to claim 2, wherein: The second end of the second backing ring is fixedly connected to the cantilever and is electrically conductive.

5. The process chamber according to claim 4, wherein: The connection position between the second end of the second backing ring and the cantilever is located outside the end of the gate hole close to the side wall of the cavity.

6. The process chamber according to claim 4, wherein: The connection position between the second end of the second backing ring and the cantilever is located on the inner side of one end of the first gate hole close to the side wall of the base, and the gate hole also includes a second gate hole arranged on the second backing ring, and the second gate hole and the first gate hole have the same orthographic projection on the horizontal plane.

7. The process chamber according to claim 4, wherein: The process chamber further includes a liner grounding ring, which is arranged on the outside of the base and is fixedly connected to the cantilever and the second end of the second liner ring respectively and is electrically conductive.

8. The process chamber according to claim 5, wherein: The sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring; the first gate hole is provided on the first horizontal sidewall; The side walls of the second liner ring include a second horizontal side wall, a third horizontal side wall, a second vertical side wall and a third vertical side wall, wherein the second horizontal side wall is lower than the first horizontal side wall, and the second vertical side wall is located on the outside of the first vertical side wall; the outer peripheral edge of the second horizontal side wall is connected to the lower end edge of the second vertical side wall; the inner peripheral edge of the second horizontal side wall is connected to the upper end edge of the third vertical side wall, and the lower end edge of the third vertical side wall is the second end of the second liner ring, and the upper end edge of the second vertical side wall is connected to the outer peripheral edge of the third horizontal side wall; the inner peripheral edge of the third horizontal side wall is connected to the upper end edge of the first vertical side wall.

9. The process chamber according to claim 6, wherein: The sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring; the first gate hole is provided on the first horizontal sidewall; The side walls of the second liner ring include a second horizontal side wall, a third horizontal side wall, a second vertical side wall and a third vertical side wall, wherein the second horizontal side wall is lower than the first horizontal side wall, and the second vertical side wall is located on the outside of the first vertical side wall; the outer peripheral edge of the second horizontal side wall is connected to the lower end edge of the second vertical side wall; the inner peripheral edge of the second horizontal side wall is connected to the upper end edge of the third vertical side wall, and the lower end edge of the third vertical side wall is the second end of the second liner ring, and the upper end edge of the second vertical side wall is connected to the outer peripheral edge of the third horizontal side wall; the inner peripheral edge of the third horizontal side wall is connected to the upper end edge of the first vertical side wall; the second gate hole is arranged on the second horizontal side wall.

10. The process chamber according to any one of claims 3 to 7, wherein: The radial distance between the first backing ring and the second backing ring is less than or equal to 20 mm.

11. The process chamber according to any one of claims 2 to 9, characterized in that: The process chamber further includes an insulating connection ring having insulation and thermal conductivity, wherein the insulating connection ring is connected between the first end of the first backing ring and the cantilever.

12. The process chamber according to claim 11, wherein: The material of the insulating connecting ring includes at least one of aluminum nitride, boron nitride and aluminum oxide.

13. The process chamber according to any one of claims 2 to 9, characterized in that: A radial distance between the first end of the first backing ring and the side wall of the base is greater than or equal to 1 mm and less than or equal to 5 mm.

14. The process chamber according to any one of claims 2 to 9, characterized in that: The wall thickness of the first liner ring is the same as the wall thickness of the extension structure, and the wall thickness is greater than or equal to 7 mm.

15. A process chamber comprising a cavity, a base and a plurality of cantilevers disposed in the cavity, wherein the plurality of cantilevers are distributed around the base at intervals along the circumference of the base, and each cantilever is connected between a side wall of the base and a side wall of the cavity, characterized in that: The device further comprises an inner lining structure, the inner lining structure being spaced around the side wall of the cavity and the side wall of the base, and the inner lining structure being provided with grid holes for gas to pass through; The first end of the lining structure is spaced apart and located outside the side wall of the base and is electrically insulated from the base and the cantilever; the second end of the lining structure is not lower than the top of the side wall of the cavity, and the second end is provided with an extension structure, which extends from the second end to the cavity or the cantilever and is electrically connected thereto; The lining structure includes a first lining ring, wherein a first end of the first lining ring, serving as the first end of the lining structure, is spaced apart and located outside the side wall of the base and is electrically insulated from the base and the cantilever; a second end of the first lining ring, serving as the second end of the lining structure, is provided with the extension structure; The sidewall of the first backing ring includes a first horizontal sidewall and a first vertical sidewall, wherein the outer peripheral edge of the first horizontal sidewall is integrally connected to the lower end edge of the first vertical sidewall; the inner peripheral edge of the first horizontal sidewall is the first end of the first backing ring, and the upper end edge of the first vertical sidewall is the second end of the first backing ring; An annular step portion is provided between an outer peripheral edge of the first horizontal side wall and a lower end edge of the first vertical side wall.

16. The process chamber according to claim 15, wherein: The gate hole includes a first gate hole provided on the first backing ring.

17. The process chamber according to claim 16, wherein: The first gate hole is arranged on the first horizontal side wall.

18. The process chamber according to claim 16, wherein: The annular step portion includes a horizontal step side wall and a vertical step side wall, wherein the horizontal step side wall is higher than the first horizontal side wall; and the inner peripheral edge of the horizontal step side wall is integrally connected to the upper end edge of the vertical step side wall; the outer peripheral edge of the horizontal step side wall is integrally connected to the lower end edge of the first vertical side wall; and the lower end edge of the vertical step side wall is integrally connected to the outer peripheral edge of the first horizontal side wall; The gate hole further includes a step gate hole provided on the side wall of the vertical step, and an opening of the step gate hole is provided corresponding to an opening of the first gate hole and is in communication with each other.

19. The process chamber according to claim 16, wherein: The extension structure includes an annular flange protruding relative to the outer peripheral surface of the first backing ring. The annular flange is superimposed on the top surface of the side wall of the cavity and is fixedly connected to the cavity and electrically conductive.

20. The process chamber according to any one of claims 15 to 18, wherein: The process chamber further includes an insulating connection ring having insulation and thermal conductivity, wherein the insulating connection ring is connected between the first end of the first backing ring and the cantilever.

21. The process chamber according to claim 19, wherein: The material of the insulating connecting ring includes at least one of aluminum nitride, boron nitride and aluminum oxide.

22. The process chamber according to any one of claims 15 to 18, wherein: A radial distance between the first end of the first backing ring and the side wall of the base is greater than or equal to 1 mm and less than or equal to 5 mm.

23. The process chamber according to any one of claims 15 to 18, wherein: The wall thickness of the first liner ring is the same as the wall thickness of the extension structure, and the wall thickness is greater than or equal to 7 mm.

24. A semiconductor processing equipment, characterized in that: A process chamber comprising the process chamber according to any one of claims 1 to 23.

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