A thin chip anti-fracture patch process and patch device

Abstract

The present invention discloses a thin chip anti-fracture patch process and a patch device thereof, and relates to the field of semiconductor technology, comprising the following steps: S101: placing a substrate in an acid solution for cleaning; S102: depositing a layer of resin adhesive in the patch area of ​​the substrate; S103: melting the epoxy resin, flattening the epoxy resin with a scraper; S104: checking whether the microcircuit of the chip is complete; S105: placing the chip in the corresponding position of the substrate; S106: pressing the chip using a patch device; S107: placing the substrate after patching in an oven, maintaining the heating temperature at 150-200°C, and controlling the time at 1-2h to cure the epoxy resin; S108: detecting whether the chip patched on the substrate is broken; S109: cutting off the epoxy resin at the broken chip, removing the broken chip, repeating the above operation on the removed part, and re-patch the part. The present invention uses the anti-fracture patch process to prevent the chip from cracking due to uneven force.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a thin chip anti-fracture patch process and a patch device thereof. Background Art

[0002] The chip packaging process requires chip mounting. As electronic products become thinner in the future, thin chips will also become thinner, but thin chips are prone to cracks during the mounting process. In the prior art, in the mounting process, the buffer is insufficient and the pressing speed is too fast, which can easily cause cracks in thin chips. The reagents and substrates used to bond the chips in the mounting process have uneven surfaces, which can easily cause uneven force on the thin chips during pressing, resulting in cracks.

[0003] In order to solve the above problems, it is necessary to provide a thin chip anti-fracture chip bonding process and a chip bonding device. Summary of the invention

[0004] In order to solve the above technical problems, a thin chip anti-fracture bonding process and a bonding device are provided. The technical solution solves the problems that the technology proposed in the above background technology has insufficient buffering and too fast pressing speed during the bonding process, which easily leads to cracks in the thin chip. The reagents and substrates for bonding the chips used in the bonding process have uneven surfaces, which easily leads to uneven force on the thin chip during pressing and cracks.

[0005] In order to achieve the above purpose, the technical solution adopted by the present invention is:

[0006] A thin chip anti-fracture bonding process includes the following steps:

[0007] S101: placing the substrate in an acid solution for cleaning, softening the substrate surface, and scraping the fine protrusions on the substrate surface with a scraper;

[0008] S102: first, deposit a layer of resin adhesive on the substrate patch area using a needle-shaped dispensing device or a surface printing method, and flatten the resin adhesive using a scraper to ensure that the thickness of the resin adhesive does not exceed 0.1 mm;

[0009] S103: heating the epoxy resin to above 300° C., and after the epoxy resin is melted, stirring the epoxy resin evenly, depositing a layer of epoxy resin on the resin adhesive layer on the substrate with a needle-shaped dispenser, flattening the epoxy resin with a scraper, and flattening the surface of the epoxy resin with a pressing plate to ensure that the epoxy resin thickness is about 0.1 mm, with an error of no more than 0.01 mm;

[0010] S104: Check whether the microcircuit of the chip is complete, including whether diodes, transistors, microresistors and capacitors are missing;

[0011] S105: Position the chip placement position with an error of no more than 0.01 mm, and place the chip on the corresponding position of the substrate to ensure that the chip is placed horizontally;

[0012] S106: Using a chip placement device to press the chip, the chip placement device presses the chip downward by 0.05 mm, and the epoxy resin at the bottom of the chip is pressed into a flat film. The chip placement device has a buffer structure;

[0013] S107: Put the substrate after the patch into an oven, maintain the heating temperature at 150-200° C., control the time at 1-2 hours, and cure the epoxy resin;

[0014] S108: Detect whether the chip on the substrate is broken;

[0015] S109: Cut off the epoxy resin at the broken chip, remove the broken chip, repeat the above operation on the removed part, and re-mount the part.

[0016] Preferably, the resin adhesive uses silver paste, adhesive, solvent, and additive. The silver content is generally 60-70%, the silver powder particles are less than 20μm, and the rest is composed of adhesive, solvent and additive in a ratio of 1:1:1. The adhesive is synthetic resin, the solvent is diethylene glycol ethyl ether acetate, and the additive is glass powder.

[0017] Preferably, the heating of the epoxy resin in S103 is divided into two steps: a preheating stage and a heating stage. During preheating, the heating rate is controlled to be 5°C / min, and the temperature is raised to 150-200°C. During heating, the heating rate is controlled to be 10°C / min, and the temperature is raised to above 300°C.

[0018] Preferably, the epoxy resin should be sealed and stored in a ventilated, cool and dry warehouse with an ambient temperature of 5-40°C, and the unused epoxy resin must be well re-sealed, and the shelf life of the epoxy resin is controlled within 12 months.

[0019] Preferably, after the epoxy resin is cured in S107, the epoxy resin is cooled to below 80° C., and the cooling rate is controlled to be 10° C. / min.

[0020] Preferably, the heating rate in S107 is controlled at 10° C. / min.

[0021] Preferably, the pickling solution in S101 is composed of concentrated sulfuric acid and water, the mass fraction of concentrated sulfuric acid is 75% to 97%, and the pickling temperature is 40°C.

[0022] A patch device based on the above-mentioned anti-fracture patch process of thin chips includes a base, a carrier is fixedly connected to the middle of the upper surface of the base, a substrate is arranged on the top of the carrier, sliding rods are fixedly connected to the positions of the four corners of the upper surface of the base at the carrier, a buffer is slidably connected to the upper part of the sliding rod, a buffer spring is sleeved on the surface of the sliding rod, the top of the buffer spring is fixedly connected to the bottom end of the buffer, the bottom end of the buffer spring is fixedly connected to the upper surface of the base, support rods are fixedly connected to the left and right sides of the upper surface of the base, the top of the support rods is fixedly connected to a frame, a patch cylinder is fixedly connected to the middle of the bottom of the frame, and a pressure plate is fixedly connected to the output end of the patch cylinder.

[0023] Compared with the prior art, the present invention provides a thin chip anti-fracture bonding process and a bonding device thereof, which has the following beneficial effects:

[0024] Through this process and patch device, this process focuses on the flatness of the adhesive and the substrate when the chip is patched, so as to avoid cracks in the chip due to uneven force. At the same time, the chip is reviewed after patching to ensure that the chip with cracks is replaced, thereby doubly ensuring the integrity of the chip. At the same time, the patch device is provided with buffer devices such as buffers, slide bars and buffer springs. When the pressure plate presses the chip on the substrate, the buffer and slide bar can slow down the pressing speed of the pressure plate, making the pressing process gentler, thereby making the thin chip less likely to break. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the process of the present invention;

[0026] Figure 2 It is a schematic diagram of the structure of the patch device of the present invention.

[0027] The numbers in the figure are:

[0028] 1. Frame; 2. Pressure plate; 3. Buffer; 4. Sliding rod; 5. Buffer spring; 6. Base plate; 7. Carrier; 8. Base; 9. Support rod; 10. Patch cylinder. DETAILED DESCRIPTION

[0029] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0030] Example 1

[0031] Reference Figure 1-2 As shown, a thin chip anti-fracture bonding process includes the following steps:

[0032] S101: placing the substrate in an acid solution for cleaning, softening the substrate surface, and scraping the fine protrusions on the substrate surface with a scraper;

[0033] S102: first, deposit a layer of resin adhesive on the substrate patch area using a needle-shaped dispensing device or a surface printing method, and flatten the resin adhesive using a scraper to ensure that the thickness of the resin adhesive does not exceed 0.1 mm;

[0034] S103: heating the epoxy resin to above 300° C., and after the epoxy resin is melted, stirring the epoxy resin evenly, depositing a layer of epoxy resin on the resin adhesive layer on the substrate with a needle-shaped dispenser, flattening the epoxy resin with a scraper, and flattening the surface of the epoxy resin with a pressing plate to ensure that the epoxy resin thickness is about 0.1 mm, with an error of no more than 0.01 mm;

[0035] S104: Check whether the microcircuit of the chip is complete, including whether diodes, transistors, microresistors and capacitors are missing;

[0036] S105: Position the chip placement position with an error of no more than 0.01 mm, and place the chip on the corresponding position of the substrate to ensure that the chip is placed horizontally;

[0037] S106: The chip is pressed using a chip placement device, the chip placement device presses the chip downward by 0.05 mm, and the epoxy resin at the bottom of the chip is pressed into a flat film, and the chip placement device has a buffer structure;

[0038] S107: Put the substrate after the patch into an oven, maintain the heating temperature at 150° C., control the time to 1 hour, and cure the epoxy resin;

[0039] S108: Detect whether the chip on the substrate is broken;

[0040] S109: Cut off the epoxy resin at the broken chip, remove the broken chip, repeat the above operation on the removed part, and re-mount the part.

[0041] Specifically, the resin adhesive uses silver paste, adhesive, solvent, and additive. The silver content is generally 60%, and the silver powder particles are less than 20μm. The rest is composed of adhesive, solvent and additive in a ratio of 1:1:1. The adhesive is synthetic resin, the solvent is diethylene glycol ethyl ether acetate, and the additive is glass powder.

[0042] The heating of epoxy resin in S103 is divided into two steps: preheating stage and heating stage. During preheating, the heating rate is controlled at 5℃ / min and the temperature is raised to 150℃. During heating, the heating rate is controlled at 10℃ / min and the temperature is raised to 300℃.

[0043] Epoxy resin should be sealed and stored in a ventilated, cool and dry warehouse with an ambient temperature of 5-40℃. Unused epoxy resin must be well re-sealed. The shelf life of epoxy resin should be controlled within 12 months.

[0044] After the epoxy resin in S107 is cured, the epoxy resin is cooled to below 80° C., and the cooling rate is controlled to 10° C. / min.

[0045] In S107, the heating rate is controlled at 10°C / min.

[0046] The pickling solution in S101 is composed of concentrated sulfuric acid and water, the mass fraction of concentrated sulfuric acid is 75%, and the pickling temperature is 40°C.

[0047] Chip breakage ratio Less than 0.1‰

[0048] Example 2

[0049] Reference Figure 1-2 As shown, a thin chip anti-fracture bonding process includes the following steps:

[0050] S101: placing the substrate in an acid solution for cleaning, softening the substrate surface, and scraping the fine protrusions on the substrate surface with a scraper;

[0051] S102: first, deposit a layer of resin adhesive on the substrate patch area using a needle-shaped dispensing device or a surface printing method, and flatten the resin adhesive using a scraper to ensure that the thickness of the resin adhesive does not exceed 0.1 mm;

[0052] S103: heating the epoxy resin to 320° C., and after the epoxy resin is melted, stirring the epoxy resin evenly, depositing a layer of epoxy resin on the resin adhesive layer on the substrate with a needle-shaped dispenser, flattening the epoxy resin with a scraper, and flattening the surface of the epoxy resin with a pressing plate to ensure that the epoxy resin thickness is about 0.1 mm, with an error of no more than 0.01 mm;

[0053] S104: Check whether the microcircuit of the chip is complete, including whether diodes, transistors, microresistors and capacitors are missing;

[0054] S105: Position the chip placement position with an error of no more than 0.01 mm, and place the chip on the corresponding position of the substrate to ensure that the chip is placed horizontally;

[0055] S106: Using a chip placement device to press the chip, the chip placement device presses the chip downward by 0.05 mm, and the epoxy resin at the bottom of the chip is pressed into a flat film. The chip placement device has a buffer structure;

[0056] S107: Put the substrate after the patch into an oven, maintain the heating temperature at 180° C., control the heating time at 1.5 hours, and cure the epoxy resin;

[0057] S108: Detect whether the chip on the substrate is broken;

[0058] S109: Cut off the epoxy resin at the broken chip, remove the broken chip, repeat the above operation on the removed part, and re-mount the part.

[0059] Specifically, the resin adhesive uses silver paste, adhesive, solvent, and additive. The silver content is generally 65%, and the silver powder particles are less than 20μm. The rest is composed of adhesive, solvent and additive in a ratio of 1:1:1. The adhesive is synthetic resin, the solvent is diethylene glycol ethyl ether acetate, and the additive is glass powder.

[0060] The heating of epoxy resin in S103 is divided into two steps: preheating stage and heating stage. During preheating, the heating rate is controlled at 5℃ / min and the temperature is raised to 180℃. During heating, the heating rate is controlled at 10℃ / min and the temperature is raised to 320℃.

[0061] Epoxy resin should be sealed and stored in a ventilated, cool and dry warehouse with an ambient temperature of 5-40℃. Unused epoxy resin must be well re-sealed. The shelf life of epoxy resin should be controlled within 12 months.

[0062] After the epoxy resin in S107 is cured, the epoxy resin is cooled to below 80° C., and the cooling rate is controlled to 10° C. / min.

[0063] In S107, the heating rate is controlled at 10°C / min.

[0064] The pickling solution in S101 is composed of concentrated sulfuric acid and water, the mass fraction of concentrated sulfuric acid is 85%, and the pickling temperature is 40°C.

[0065] Chip breakage ratio Less than 0.05‰

[0066] Example 3

[0067] Reference Figure 1-2 As shown, a thin chip anti-fracture bonding process includes the following steps:

[0068] S101: placing the substrate in an acid solution for cleaning, softening the substrate surface, and scraping the fine protrusions on the substrate surface with a scraper;

[0069] S102: first, deposit a layer of resin adhesive on the substrate patch area using a needle-shaped dispensing device or a surface printing method, and flatten the resin adhesive using a scraper to ensure that the thickness of the resin adhesive does not exceed 0.1 mm;

[0070] S103: heating the epoxy resin to 350° C., and after the epoxy resin is melted, stirring the epoxy resin evenly, depositing a layer of epoxy resin on the resin adhesive layer on the substrate with a needle-shaped dispenser, flattening the epoxy resin with a scraper, and flattening the surface of the epoxy resin with a pressing plate to ensure that the thickness of the epoxy resin is about 0.1 mm, with an error of no more than 0.01 mm;

[0071] S104: Check whether the microcircuit of the chip is complete, including whether diodes, transistors, microresistors and capacitors are missing;

[0072] S105: Position the chip placement position with an error of no more than 0.01 mm, and place the chip on the corresponding position of the substrate to ensure that the chip is placed horizontally;

[0073] S106: The chip is pressed using a chip placement device, the chip placement device presses the chip downward by 0.05 mm, and the epoxy resin at the bottom of the chip is pressed into a flat film, and the chip placement device has a buffer structure;

[0074] S107: Put the substrate after the patch into an oven, maintain the heating temperature at 200° C., control the time at 2 hours, and cure the epoxy resin;

[0075] S108: Detect whether the chip on the substrate is broken;

[0076] S109: Cut off the epoxy resin at the broken chip, remove the broken chip, repeat the above operation on the removed part, and re-mount the part.

[0077] Specifically, the resin adhesive uses silver paste, adhesive, solvent, and additive. The silver content is generally 70%, and the silver powder particles are less than 20μm. The rest is composed of adhesive, solvent and additive in a ratio of 1:1:1. The adhesive is synthetic resin, the solvent is diethylene glycol ethyl ether acetate, and the additive is glass powder.

[0078] The heating of epoxy resin in S103 is divided into two steps: preheating stage and heating stage. During preheating, the heating rate is controlled at 5℃ / min and the temperature is raised to 200℃. During heating, the heating rate is controlled at 10℃ / min and the temperature is raised to 350℃.

[0079] Epoxy resin should be sealed and stored in a ventilated, cool and dry warehouse with an ambient temperature of 5-40℃. Unused epoxy resin must be well re-sealed. The shelf life of epoxy resin should be controlled within 12 months.

[0080] After the epoxy resin in S107 is cured, the epoxy resin is cooled to below 80° C., and the cooling rate is controlled to 10° C. / min.

[0081] In S107, the heating rate is controlled at 10°C / min.

[0082] The pickling solution in S101 is composed of concentrated sulfuric acid and water, the mass fraction of concentrated sulfuric acid is 97%, and the pickling temperature is 40°C.

[0083] Chip breakage ratio Less than 0.06‰

[0084] Reference Figure 2 , a patch device based on the anti-fracture patch process of the above-mentioned thin chip, including a base 8, a carrier 7 is fixedly connected to the middle of the upper surface of the base 8, a substrate 6 is arranged on the top of the carrier 7, and the upper surface of the base 8 is fixedly connected to the positions of the four corners of the carrier 7, and the upper part of the slide bar 4 is slidably connected to the buffer 3, and the surface of the slide bar 4 is sleeved with a buffer spring 5, the top of the buffer spring 5 is fixedly connected to the bottom end of the buffer 3, and the bottom end of the buffer spring 5 is fixedly connected to the upper surface of the base 8, and the left and right sides of the upper surface of the base 8 are fixedly connected to support rods 9, the top of the support rods 9 is fixedly connected to the frame 1, and the middle of the bottom of the frame 1 is fixedly connected to the patch cylinder 10, and the output end of the patch cylinder 10 is fixedly connected to the pressure plate 2;

[0085] When in use, the patch cylinder 10 drives the pressure plate 2 to descend, and presses the chip on the substrate 6, so that the chip is sunk into the epoxy resin. When the pressure plate 2 is close to the substrate 6, the buffer 3 first contacts the pressure plate 2, and the pressure plate 2 continues to descend. The buffer spring 5 is compressed, thereby slowing down the further descent of the pressure plate 2, making the downward pressing speed of the pressure plate 2 smaller, thereby making the pressing of the chip on the substrate 6 softer, avoiding excessive speed and causing chip breakage.

[0086] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. A thin chip anti-fracture patch process, characterized in that: The following steps are involved: S101: placing the substrate in an acid solution for cleaning, softening the substrate surface, and scraping the fine protrusions on the substrate surface with a scraper; S102: first, deposit a layer of resin adhesive on the substrate patch area using a needle-shaped dispensing device or a surface printing method, and flatten the resin adhesive using a scraper to ensure that the thickness of the resin adhesive does not exceed 0.1 mm; S103: heating the epoxy resin to above 300° C., and after the epoxy resin is melted, stirring the epoxy resin evenly, depositing a layer of epoxy resin on the resin adhesive layer on the substrate with a needle-shaped dispenser, flattening the epoxy resin with a scraper, and flattening the surface of the epoxy resin with a pressing plate to ensure that the epoxy resin thickness is about 0.1 mm, with an error of no more than 0.01 mm; S104: Check whether the microcircuit of the chip is complete, including whether diodes, transistors, microresistors and capacitors are missing; S105: Position the chip placement position with an error of no more than 0.01 mm, and place the chip on the corresponding position of the substrate to ensure that the chip is placed horizontally; S106: The chip is pressed using a chip placement device, the chip placement device presses the chip downward by 0.05 mm, and the epoxy resin at the bottom of the chip is pressed into a flat film, and the chip placement device has a buffer structure; S107: Put the substrate after the patch into an oven, maintain the heating temperature at 150-200° C., control the time at 1-2 hours, and cure the epoxy resin; S108: Detect whether the chip on the substrate is broken; S109: Cut off the epoxy resin at the broken chip, remove the broken chip, repeat the above operation on the removed part, and re-mount the part.

2. The anti-fracture mounting process for thin chips according to claim 1, characterized in that: The resin adhesive uses silver paste, adhesive, solvent and auxiliary agent. The silver content is generally 60-70%, the silver micropowder particles are less than 20μm, and the rest is composed of adhesive, solvent and auxiliary agent in a ratio of 1:1:

1. The adhesive uses synthetic resin, the solvent uses diethylene glycol ethyl ether acetate, and the auxiliary agent uses glass powder.

3. The anti-fracture mounting process for thin chips according to claim 1, characterized in that: The heating of the epoxy resin in S103 is divided into two steps: a preheating stage and a heating stage. During preheating, the heating rate is controlled to be 5°C / min and the temperature is raised to 150-200°C. During heating, the heating rate is controlled to be 10°C / min and the temperature is raised to above 300°C.

4. The anti-fracture chip bonding process of a thin chip according to claim 1, characterized in that: The epoxy resin should be sealed and stored in a ventilated, cool and dry warehouse with an ambient temperature of 5-40°C, and the unused epoxy resin must be well re-sealed. The shelf life of the epoxy resin is controlled within 12 months.

5. The anti-fracture mounting process for thin chips according to claim 1, characterized in that: After the epoxy resin is cured in S107, the epoxy resin is cooled to below 80° C., and the cooling rate is controlled to be 10° C. / min.

6. The anti-fracture bonding process for thin chips according to claim 1, characterized in that: The heating rate in S107 is controlled at 10°C / min.

7. The anti-fracture mounting process for thin chips according to claim 1, characterized in that: The pickling solution in S101 is composed of concentrated sulfuric acid and water, the mass fraction of the concentrated sulfuric acid is 75% to 97%, and the pickling temperature is 40°C.

8. A chip bonding device for a thin chip anti-fracture bonding process according to any one of claims 1 to 7, characterized in that: The invention comprises a base (8), wherein a carrier (7) is fixedly connected in the middle of the upper surface of the base (8), a base plate (6) is arranged on the top of the carrier (7), a slide bar (4) is fixedly connected at the positions of the four corners of the upper surface of the base (8), a buffer component (3) is slidably connected to the upper part of the slide bar (4), a buffer spring (5) is sleeved on the surface of the slide bar (4), the top of the buffer spring (5) is fixedly connected to the bottom end of the buffer component (3), the bottom end of the buffer spring (5) is fixedly connected to the upper surface of the base (8), support rods (9) are fixedly connected on both sides of the upper surface of the base (8), the top of the support rods (9) is fixedly connected to a frame (1), a patch cylinder (10) is fixedly connected in the middle of the bottom of the frame (1), and a pressure plate (2) is fixedly connected to the output end of the patch cylinder (10).

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