Semiconductor component, plasma processing device, and method for forming corrosion-resistant coating
By forming rare earth oxide or rare earth fluoride coatings on the surface of semiconductor components and modifying atomic defects, the problem of oxygen defects of yttrium oxide coatings in plasma etching process is solved, and the corrosion resistance and insulation performance of components are improved.
Patent Information
- Application Number
- CN202011507108.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-12-18
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2040-12-18
AI Technical Summary
During the manufacturing process of semiconductor devices, in the plasma etching process, the yttrium oxide corrosion-resistant coating is prone to oxygen defects in a vacuum environment, resulting in heterochromatic spots on the appearance of the coating and low oxygen activity, which cannot completely eliminate defects, thereby reducing resistance. Corrosion capability.
The surface of semiconductor components is formed with a rare earth oxide or rare earth fluoride coating, and atomic defects are formed by passing defective gases such as hydrogen or argon, and then these defects are modified with halogen or oxygen ions filled in the ion source to form corrosion resistance. coating.
It improves the corrosion resistance of semiconductor components, prevents ions in plasma from corroding along atomic defect positions, reduces the risk of insulation of the coating, and enhances corrosion resistance.
Smart Images
Figure CN114649179B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductors, and in particular to a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating. Background Art
[0002] In the manufacturing process of semiconductor devices, plasma etching is a key process for processing wafers into designed patterns.
[0003] In a typical plasma etching process, process gases (such as CF4, O2, etc.) form plasma under the action of radio frequency (RF). After passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, these plasmas physically bombard and chemically react with the wafer surface, thereby etching a wafer with a specific structure.
[0004] However, during the plasma etching process, physical bombardment and chemical reaction will also act on all semiconductor components in contact with plasma inside the etching chamber, causing corrosion. Therefore, it is necessary to prepare a corrosion-resistant coating with excellent performance on the surface of the component body to resist the corrosion of plasma. At present, it is more commonly used to use yttrium oxide as the material of the corrosion-resistant coating. The yttrium oxide is usually formed by a physical vapor deposition process. However, the physical vapor deposition process needs to be carried out under vacuum regulation. Yttrium oxide is extremely easy to produce oxygen defects on the component body, causing heterochromatic spots to appear on the appearance of the corrosion-resistant coating. Although oxygen is introduced for regulation during the deposition of yttrium oxide, the activity of oxygen is still low in the physical vapor deposition environment, and the generated oxygen defects cannot be completely eliminated. Oxygen defects are the pathway of fluoride ion corrosion. Therefore, it is urgent to form a corrosion-resistant coating with excellent performance on the surface of the component body to reduce defects and improve corrosion resistance. Summary of the invention
[0005] The technical problem solved by the present invention is to provide a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, so as to reduce defects on the surface of the corrosion-resistant coating and improve the corrosion resistance.
[0006] In order to solve the above technical problems, the present invention provides a method for forming a corrosion-resistant coating on the surface of a component body, comprising: providing a component body; forming a rare earth oxide coating or a rare earth fluoride coating on the surface of the component body; introducing a defect gas to form atomic defects on the surface of the rare earth oxide coating or the rare earth fluoride coating; providing a filling ion source so that the filling ions in the filling ion source modify the atomic defects to form a corrosion-resistant coating.
[0007] Optionally, when a rare earth oxide coating is formed on the surface of the component body, the atomic defects are oxygen defects, the filling ions are halogen ions, and the defect gas includes at least one of hydrogen or argon.
[0008] Optionally, when the filling ions are fluoride ions, the filling ion source includes: hydrogen fluoride or a fluorine-containing solution.
[0009] Optionally, when a rare earth fluoride coating is formed on the surface of the component body, the atomic defects are fluorine defects, the filling ions are oxygen ions, and the defect-forming gas includes at least one of hydrogen or argon.
[0010] Optionally, the process parameters for forming the oxygen defect or the fluorine defect include: placing the rare earth oxide coating or the rare earth fluoride coating under a hydrogen atmosphere and applying plasma bombardment, wherein the intensity of the plasma bombardment ranges from 0.3 kW to 50 kW.
[0011] Optionally, the process parameters for forming the oxygen defect or fluorine defect include: placing the rare earth oxide coating or the rare earth fluoride coating in a vacuum environment, and the vacuum degree range is 10 -3 mbar~10 -5 mbar, and apply plasma bombardment, the intensity of plasma bombardment ranges from 0.3kW to 50kW.
[0012] Optionally, the rare earth elements in the rare earth oxide or rare earth fluoride include scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium.
[0013] Correspondingly, the present invention also provides a semiconductor component, including: a component body; the above-mentioned corrosion-resistant coating, whose material includes rare earth oxide or rare earth fluoride, located on the surface of the component body, the corrosion-resistant coating has a modified surface, the modified surface has atomic defects, and the atomic defects are modified by filling ions.
[0014] Optionally, the crystal form of the intrinsic material of the corrosion-resistant coating is the same as the crystal form of the modified corrosion-resistant coating.
[0015] Optionally, the thickness of the atomic defects in the corrosion-resistant coating ranges from 0.5 microns to 100 microns.
[0016] Optionally, the corrosion-resistant coating is a crystalline structure; the concentration of atomic defects in the corrosion-resistant coating is: 10 3 Number of atoms / cm2~10 7 Number of atoms / square centimeter.
[0017] Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber; and the above-mentioned semiconductor component, located in the reaction chamber.
[0018] Optionally, the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma.
[0019] Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.
[0020] Optionally, when the plasma etching device is an inductively coupled plasma processing device, the components include: at least one of a ceramic plate, an inner sleeve, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic suction cup assembly, a covering ring, a focusing ring, an insulating ring or a plasma confinement device.
[0021] Optionally, when the plasma etching device is a capacitively coupled plasma processing device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic suction cup assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring or at least one of a plasma confinement device.
[0022] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
[0023] In the semiconductor component provided by the technical solution of the present invention, the surface of the component body has a corrosion-resistant coating, the corrosion-resistant coating has a modified surface, the modified surface has atomic defects, and the atomic defects are modified by filling ions. When the semiconductor component is exposed to a plasma environment, the ions in the plasma environment are not easily transferred to the surface of the component body along the atomic defect position, thereby helping to improve the corrosion resistance of the semiconductor component. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a structural schematic diagram of a plasma processing device of the present invention;
[0025] Figure 2 It is a structural schematic diagram of another plasma processing device of the present invention;
[0026] Figure 3 It is a process flow chart of forming a corrosion-resistant coating on the surface of a component body according to the present invention;
[0027] Figure 4 It is a structural schematic diagram of a semiconductor component of the present invention;
[0028] Figure 5 It is a schematic diagram of oxygen defects being modified by fluoride ions when the corrosion-resistant coating of the present invention is yttrium oxide;
[0029] Figure 6It is a schematic diagram of the modification of fluorine defects by oxygen ions when the corrosion-resistant coating of the present invention is yttrium fluoride;
[0030] Figure 7 The X-ray diffraction diagram of the corrosion-resistant coating of the present invention is yttrium oxide. DETAILED DESCRIPTION
[0031] As described in the background technology, it is urgent to prepare a corrosion-resistant coating with excellent performance on the surface of the component body to resist plasma corrosion. To this end, the present invention is committed to providing a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating on the surface of the component body. The semiconductor component has strong corrosion resistance in a plasma environment, which is described in detail below:
[0032] Figure 1 The figure is a schematic structural diagram of a plasma processing device of the present invention.
[0033] Please refer to Figure 1 The plasma processing device includes: a reaction chamber 100, the reaction chamber 100 is a plasma environment, the semiconductor components and the inner wall of the reaction chamber 100 are exposed to the plasma environment, and the plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma or O-containing plasma.
[0034] The plasma processing device further includes: a base 101, an electrostatic chuck 103 is disposed above the base 101, an electrode (not shown in the figure) is disposed inside the electrostatic chuck 103, the electrode is electrically connected to a direct current power supply DC, and is used to generate an electrostatic force to fix the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of semiconductor components from being corroded by plasma, a corrosion-resistant coating needs to be coated on the surface of the component body.
[0035] In this embodiment, the plasma processing device is a capacitively coupled plasma reaction device, and accordingly, the semiconductor components exposed to the plasma environment include: a shower head 102, an upper grounding ring 104, a moving ring, a gas distribution plate 105, a gas buffer plate, an electrostatic suction cup assembly 103, a lower grounding ring 106, a covering ring 107, a focusing ring 108, an insulating ring, and at least one of a plasma confinement device 109.
[0036] Figure 2 It is a schematic structural diagram of another plasma processing device of the present invention.
[0037] In this embodiment, the plasma processing device is an inductively coupled plasma reaction device, and accordingly, the semiconductor components exposed to the plasma environment include: a ceramic plate, an inner sleeve 200, a gas nozzle 201, a gas distribution plate, a gas pipe flange, an electrostatic suction cup assembly 202, a covering ring 203, a focusing ring 204, an insulating ring and at least one of a plasma confinement device 205.
[0038] During the plasma etching process, physical bombardment and chemical reactions will also act on all semiconductor components in contact with plasma inside the etching chamber, causing corrosion to the semiconductor components. Long-term exposure to the plasma corrosion environment will damage the surface structure, causing the precipitation of bulk components, which will separate from the surface to form tiny particles and contaminate the wafer. Advanced semiconductor manufacturing has strict requirements for tiny particle contamination, such as the number of particles larger than 45nm is 0. Therefore, it is necessary to apply a corrosion-resistant coating on the surface of the component body in the plasma reaction device to resist plasma corrosion.
[0039] In other embodiments, the plasma processing device may also be a plasma cleaning device.
[0040] The method for forming the corrosion-resistant coating is described in detail as follows:
[0041] Figure 3 The present invention is a process flow chart for forming a corrosion-resistant coating on the surface of a component body.
[0042] Please refer to Figure 3 Step S1: providing a component body; step S2: forming a rare earth oxide coating or a rare earth fluoride coating on the surface of the component body; step S3: introducing defect gas to form atomic defects on the surface of the rare earth oxide coating or the rare earth fluoride coating; step S4: providing a filling ion source so that the filling ions modify the atomic defects to form the above-mentioned corrosion-resistant coating.
[0043] The rare earth elements in the rare earth oxide or rare earth fluoride include scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium.
[0044] In one embodiment, when a rare earth oxide coating is formed on the surface of the component body, the atomic defects are oxygen defects, the filling ions are halogen ions, and the defect gas includes at least one of hydrogen or argon. When the filling ions are fluorine ions, the fluorine source providing the fluorine ions includes hydrogen fluoride or a fluorine-containing solution.
[0045] The process parameters for forming the oxygen defects are: placing the rare earth oxide coating in a hydrogen atmosphere and applying plasma bombardment, wherein the intensity of the plasma bombardment ranges from 0.3 kW to 50 kW to generate the oxygen defects.
[0046] In another embodiment, when a rare earth fluoride coating is formed on the surface of the component body, the atomic defects are fluorine defects, the filling ions are oxygen ions, and the defect-forming gas includes at least one of hydrogen or argon.
[0047] The process parameters for forming the fluorine defects are: placing the rare earth fluoride coating in a hydrogen atmosphere and applying plasma bombardment, the intensity of the plasma bombardment ranges from 0.3kW to 50kW, to produce fluorine defects. In this embodiment, atomic defects are deliberately prepared on the surface of the corrosion-resistant coating, and then placed in a filling ion source, so that the prepared atomic defects and the atomic defects originally formed in the process will be modified by the filling ions, so that when the semiconductor component is exposed to the plasma environment, the ions in the plasma are not easy to diffuse along the atomic defects to the component body to corrode the component body, therefore, it is beneficial to improve the corrosion resistance of the semiconductor component.
[0048] The following is a detailed description of semiconductor components:
[0049] Figure 4 The figure is a schematic structural diagram of a semiconductor component of the present invention.
[0050] Please refer to Figure 4 The semiconductor component includes: a component body 300; the above-mentioned corrosion-resistant coating 301, whose material includes rare earth oxide or rare earth fluoride, is located on the surface of the component body 300, and the corrosion-resistant coating 301 has a modified surface, and the modified surface has the atomic defects modified by filled ions.
[0051] The material of the component body 300 includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramic.
[0052] The surface of the component body 300 has a corrosion-resistant coating 301, the material of the corrosion-resistant coating 301 includes rare earth oxide or rare earth fluoride, the surface of the corrosion-resistant coating 301 has atomic defects, and the atomic defects are filled with filling ions, so when the semiconductor component is exposed to a plasma environment, the ions in the plasma environment will not be gradually transferred to the surface of the component body 300 along the lattice position where the atomic defects are located, thus, it is beneficial to improve the corrosion resistance of the semiconductor component. In addition, the atomic defects in the corrosion-resistant coating 301 are modified by the filling ions, so that the insulation of the corrosion-resistant coating 301 is not reduced due to too many atomic defects, that is, the insulation performance of the corrosion-resistant coating 301 is higher and the risk of breakdown is lower.
[0053] Figure 5 This is a schematic diagram of oxygen defects being modified by fluoride ions when the corrosion-resistant coating of the present invention is yttrium oxide.
[0054] In this embodiment, the material of the corrosion-resistant coating 301 is yttrium oxide, the atomic defects are oxygen defects, and the filling ions are fluorine ions. The oxygen defects on the surface of the yttrium oxide are filled with fluorine ions, and the yttrium oxide corrosion-resistant coating 301 is exposed to the plasma environment. The fluorine ions in the plasma environment are not easy to diffuse along the oxygen defects to the surface of the component body 300, so it is beneficial to improve the corrosion resistance of the corrosion-resistant coating 301.
[0055] In other embodiments, the corrosion-resistant coating is a rare earth oxide other than yttrium oxide, for example, the material of the corrosion-resistant coating is at least one of zirconium oxide, lutetium oxide or ytterbium oxide, and accordingly, the atomic defects are oxygen defects, and the filling ions are halogen ions, for example, the filling ions are at least one of fluorine, chlorine, bromine, iodine or astatine.
[0056] Figure 6 This is a schematic diagram of fluorine defects being modified by oxygen ions when the corrosion-resistant coating of the present invention is yttrium fluoride.
[0057] In this embodiment, the material of the corrosion-resistant coating 301 is yttrium fluoride, the atomic defects are fluorine defects, and the filling ions are oxygen ions. The fluorine defects on the surface of the yttrium fluoride are filled with oxygen ions, and the yttrium fluoride corrosion-resistant coating 301 is exposed to the plasma environment. The oxygen ions in the plasma environment are not easy to diffuse along the fluorine defects to the surface of the component body 300, so it is beneficial to improve the corrosion resistance of the corrosion-resistant coating 301.
[0058] In other embodiments, the corrosion-resistant coating is a rare earth fluoride other than yttrium fluoride, for example: the material of the corrosion-resistant coating is at least one of zirconium fluoride, lutetium fluoride or ytterbium fluoride, and accordingly, the atomic defects are fluorine defects, and the filling ions are oxygen ions.
[0059] In this embodiment, the filling ions are only used to modify the atomic defects in the corrosion-resistant coating 301, and do not change the crystal form of the corrosion-resistant coating 301, that is, the material of the corrosion-resistant body layer is the same as the crystal form of the modified corrosion-resistant coating 301. In other words, when the material of the corrosion-resistant body layer is yttrium oxide, the corrosion-resistant coating 301 formed after the oxygen defects in the surface yttrium oxide of the corrosion-resistant body layer are modified by fluorine ions is still the crystal form of yttrium oxide, rather than the crystal form of yttrium oxyfluoride; when the material of the corrosion-resistant body layer is yttrium fluoride, the corrosion-resistant coating 301 formed after the fluorine defects in the yttrium fluoride of the corrosion-resistant body layer are modified by oxygen ions is still the crystal form of yttrium fluoride, rather than the crystal form of yttrium oxyfluoride.
[0060] Figure 7 The X-ray diffraction diagram of the corrosion-resistant coating of the present invention is yttrium oxide.
[0061] Please refer to Figure 7 , 1 represents the X-ray diffraction diagram of yttrium oxide, the intrinsic material of the corrosion-resistant coating, and 2 represents the X-ray diffraction diagram of yttrium oxide in the corrosion-resistant coating after oxygen defects are modified by fluorine ions. From the figure, the characteristic peak of the intrinsic material of the corrosion-resistant coating appears at 28.83°, and the characteristic peak of the modified corrosion-resistant coating 301 appears at 29.34°. The positions of the characteristic peaks of the two are slightly different and are roughly the same. Therefore, it can be proved that the crystal form of the intrinsic material 1 of the corrosion-resistant coating is the same as that of the modified corrosion-resistant coating 301.
[0062] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.
Claims
1. A method for forming a corrosion-resistant coating on the surface of a component body, It is characterized in that include: Provide the parts body; forming a rare earth oxide coating or a rare earth fluoride coating on the surface of the component body; Passing defect gas to form atomic defects on the surface of the rare earth oxide coating or the rare earth fluoride coating; Providing a filling ion source, so that the filling ions in the filling ion source modify the atomic defects to form a corrosion-resistant coating, and before and after the filling ions modify the atomic defects, the crystal form of the rare earth oxide coating or the rare earth fluoride coating remains unchanged; When a rare earth oxide coating is formed on the surface of the component body, the atomic defects are oxygen defects, the filling ions are halogen ions, and the defect gas includes at least one of hydrogen or argon; When a rare earth fluoride coating is formed on the surface of the component body, the atomic defects are fluorine defects, the filling ions are oxygen ions, and the defect gas includes: one of hydrogen and argon.
2. The method for forming a corrosion-resistant coating on the surface of a component body according to claim 1, It is characterized in that When the filling ions are fluoride ions, the filling ion source includes: hydrogen fluoride or a fluorine-containing solution.
3. The method for forming a corrosion-resistant coating on the surface of a component body according to claim 1, It is characterized in that The process parameters for forming the oxygen defect or the fluorine defect include: placing the rare earth oxide coating or the rare earth fluoride coating under a hydrogen atmosphere and applying plasma bombardment, wherein the intensity of the plasma bombardment ranges from 0.3 kW to 50 kW.
4. The method for forming a corrosion-resistant coating on the surface of a component body according to claim 1, It is characterized in that The process parameters for forming the oxygen defect or fluorine defect include: placing the rare earth oxide coating or rare earth fluoride coating in a vacuum environment, and the vacuum degree range is 10 -3 mbar~10 -5 mbar, and apply plasma bombardment, the intensity of plasma bombardment ranges from 0.3kW to 50kW.
5. The method for forming a corrosion-resistant coating on the surface of a component body according to claim 1, It is characterized in that The rare earth elements in the rare earth oxide or rare earth fluoride include scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium.
6. A semiconductor component, It is characterized in that include: Component body; The corrosion-resistant coating formed by the method according to any one of claims 1 to 5, wherein the material includes rare earth oxide or rare earth fluoride, and is located on the surface of the component body, wherein the corrosion-resistant coating has a modified surface, wherein the modified surface has atomic defects, and wherein the atomic defects are modified by filling ions.
7. The semiconductor component according to claim 6, It is characterized in that The intrinsic material of the corrosion-resistant coating is the same as the crystal form of the modified corrosion-resistant coating.
8. The semiconductor component according to claim 6, It is characterized in that The thickness of the atomic defects in the corrosion-resistant coating ranges from 0.5 micrometers to 100 micrometers.
9. The semiconductor component according to claim 6, It is characterized in that The corrosion-resistant coating is a crystalline structure; the concentration of atomic defects in the corrosion-resistant coating is: 10 3 Number of atoms / cm2~10 7 Number of atoms / square centimeter.
10. A plasma processing device, It is characterized in that include: Reaction chamber; The semiconductor component according to any one of claims 6 to 9, located in the reaction chamber.
11. The plasma processing device according to claim 10, It is characterized in that The reaction chamber is in a plasma environment, and the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma.
12. The plasma processing apparatus according to claim 10, It is characterized in that The plasma processing device is a plasma etching device or a plasma cleaning device.
13. The plasma processing apparatus according to claim 12, It is characterized in that When the plasma etching device is an inductively coupled plasma processing device, the components include: a ceramic plate, an inner sleeve, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring or at least one of a plasma confinement device.
14. The plasma processing apparatus according to claim 12, It is characterized in that When the plasma etching device is a capacitively coupled plasma processing device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic suction cup assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring or at least one of a plasma confinement device.