Actively driven Micro-LED substrate, display device and packaging method

Abstract

The present application relates to an actively driven Micro-LED substrate, including an LED light-emitting array and a transparent substrate, wherein a groove is provided on the transparent substrate, wherein the LED light-emitting array is embedded in the groove, wherein a first adhesive layer and a second adhesive layer are provided in the groove, wherein the first adhesive layer is fixedly connected to the bottom wall of the LED light-emitting array and the bottom wall of the groove, and the second adhesive layer is fixedly connected to the side wall of the LED light-emitting array and the side wall of the groove. By embedding the LED light-emitting array in the transparent substrate to encapsulate the chip, the encapsulation method is not limited to the requirements of welding bonding, the process is simple, and the problem of inaccurate bonding is solved. The actively driven Micro-LED substrate is also provided with an encapsulation layer, wherein at least one metal lead is led out from the corresponding position of the LED light-emitting array and extends outwardly beyond the edge of the LED light-emitting array, and the spacing size of the driving circuit can be arbitrarily specified, which is not limited to the size and structure of the Micro-LED chip, and can be designed by itself according to the size and structure of the Micro-LED chip, significantly reducing the process cost.

Description

Technical Field

[0001] The present application relates to the technical field of LEDs, and in particular to an actively driven Micro-LED substrate, a display device, and a packaging method. Background Art

[0002] At present, it is still difficult to actively drive small-sized Micro-LEDs. To make Micro-LEDs of different sizes, the rewiring driving backplane is widely used. However, the rewiring substrate also has problems such as poor heat dissipation, complex structure due to line width limitation, and inaccurate bonding. Therefore, it is necessary to develop a packaging method that is not limited by the size and structure of Micro-LED chips, and is not limited by welding and bonding requirements, so that it can be adapted to the standard developed, low-cost active driving backplane.

[0003] In terms of the application of Micro-LED display, its ability to achieve high-resolution transparent display is a major technical advantage. The existing transparent display technology is mainly OLED display. With the outbreak of application requirements such as under-screen cameras and under-screen fingerprints in products such as smartphones and tablets, the demand for displays that can achieve under-screen sensing by setting local areas in the display screen as semi-transparent areas is growing. However, since liquid crystal displays cannot achieve semi-transparent displays in local areas, this technological development trend has become a huge crisis facing liquid crystal displays. If a small-sized Micro-LED transparent display can be used to replace the local pixel area in the liquid crystal display to form a transparent display area nested on the liquid crystal display, and the transparent display area is seamlessly connected with the main display area, when the Micro-LED transparent display screen is working, the transparent display area can achieve normal display, and there is no visual display interruption and discontinuous boundary, then a complete full-screen design can be achieved, and the external light of the display screen can pass through the transparent display area at any time to enter the under-screen sensor below the transparent display area to achieve sensor signal acquisition. This can solve the problem that liquid crystal displays cannot achieve under-screen sensing, and has great application prospects. Summary of the invention

[0004] In view of the above, there are still certain difficulties in actively driving small-sized Micro-LEDs. To make Micro-LEDs of different sizes, a rewiring driving backplane is widely used. However, the rewiring substrate has the problem of inaccurate bonding. This application proposes an actively driven Micro-LED substrate, a display device, and a packaging method, which adopt the following technical solutions:

[0005] In the first aspect, the present application proposes an actively driven Micro-LED substrate, comprising an LED light-emitting array and a transparent substrate, wherein the transparent substrate is provided with a groove, the LED light-emitting array is embedded in the groove, a first adhesive layer and a second adhesive layer are provided in the groove, the first adhesive layer is fixedly connected to the bottom wall of the LED light-emitting array and the bottom wall of the groove, and the second adhesive layer is fixedly connected to the side wall of the LED light-emitting array and the side wall of the groove.

[0006] By adopting the above technical solution, the LED light-emitting array is embedded in the transparent substrate to package the chip. The packaging method is not limited by the welding bonding requirements, the process is simple, and the problem of inaccurate bonding is solved.

[0007] Preferably, it further comprises a packaging layer, which is arranged on a side of the LED light emitting array away from the transparent substrate, and in the packaging layer at least one metal lead is led out from a corresponding position of the LED light emitting array and extends outwardly beyond the edge of the LED light emitting array.

[0008] By adopting the above technical solution, the packaging layer can achieve the effect of heat dissipation. Since there is at least one metal lead in the packaging layer leading out from the corresponding position of the LED light-emitting array and extending outward beyond the edge of the LED light-emitting array, the spacing size of the driving circuit can be arbitrarily specified and is not limited by the size and structure of the MicroLED chip. It can be designed according to the size and structure of the Micro-LED chip, which significantly reduces the process cost.

[0009] Preferably, it also includes a driving backplane, which is arranged on the side of the packaging layer away from the transparent substrate, and the packaging layer is provided with a surface metal layer on the side away from the transparent substrate, and the surface metal layer is electrically connected to the LED light-emitting array through metal leads in the packaging layer, and the driving backplane is electrically connected to the surface metal layer.

[0010] By adopting the above technical solution, active driving of the Micro-LED chip can be achieved.

[0011] Preferably, the encapsulation layer includes a first encapsulation layer for planarizing the Micro-LED surface and a second encapsulation layer for separating the surface metal layer and the inner layer wiring, the first encapsulation layer is arranged on the side of the LED light-emitting array away from the transparent substrate, and the second encapsulation layer is arranged on the side of the first encapsulation layer away from the LED light-emitting array.

[0012] By adopting the above technical solution, a multi-layer wiring method is used to increase the heat dissipation efficiency, thereby enhancing the driving efficiency of the chip.

[0013] Preferably, the first packaging layer includes a plurality of first via portions, a first routing portion, a second via portion and a third via portion, the first via portion is connected to the metal electrode of the LED light-emitting array, the first routing portion is connected to a part of the first via portion, the third via portion is connected to another part of the first via portion, the second via portion is connected to the first routing portion layer, the second via portion extends to the surface of the first packaging layer away from the LED light-emitting array, and at least one of the first routing portions extends outward beyond the edge of the LED light-emitting array.

[0014] Preferably, the second packaging layer includes a plurality of second routing portions, a fourth via portion, a third routing portion, a fifth via portion, a sixth via portion and a surface metal layer, the second routing portion is connected to a portion of the second via portion, the fourth via portion is connected to the second routing portion, the fifth via portion is connected to another portion of the second via portion, the third routing portion is connected to the fifth via portion, the sixth via portion is connected to the third routing portion or to the fourth via portion, the surface metal layer is connected to the sixth via portion, at least one of the second routing portions extends outward beyond the edge of the LED light-emitting array, and at least one of the third routing portions extends outward beyond the edge of the LED light-emitting array.

[0015] Preferably, it further comprises a TFT driving unit, and the TFT driving unit is arranged in a region of the transparent substrate beyond the edge of the LED light emitting array.

[0016] By adopting the above technical solution, the TFT driving unit and the LED light-emitting array are integrated on the same transparent substrate, simplifying the wiring design, and the LED light-emitting array is embedded in the transparent substrate, which can overcome a certain height difference between the LED light-emitting array and the TFT driving unit, facilitating subsequent flattening processing.

[0017] In the second aspect, the present application proposes a display device, which includes the actively driven Micro-LED substrate as described in the first aspect, and also includes a liquid crystal layer and a liquid crystal layer driving Array substrate, the liquid crystal layer is located between the actively driven Micro-LED substrate and the liquid crystal layer driving Array substrate, the liquid crystal layer driving Array substrate includes a TFT device area and a non-TFT device driving area, and the non-TFT device driving area is aligned with the area where the LED light-emitting array is located.

[0018] By adopting the above technical solution, the Micro-LED packaging of multifunctional display screens can be realized. The packaged display screen can realize multifunctional sensing without affecting the display resolution, such as screens used for iris recognition, image acquisition, and environmental data recording. The packaged display screen can realize visible light communication transmission without affecting the display resolution and the accuracy of the detection device, so a multifunctional display screen with both display and optical communication can be realized.

[0019] Preferably, the liquid crystal layer is located on a side of the transparent substrate away from the encapsulation layer, an upper polarizer is provided on the side of the encapsulation layer away from the transparent substrate, and a lower polarizer is provided on the side of the liquid crystal layer driving the array substrate away from the transparent substrate.

[0020] Preferably, the liquid crystal layer is located on a side of the encapsulation layer away from the transparent substrate, an upper polarizer is provided on a side of the transparent substrate away from the liquid crystal layer driving array substrate, and a lower polarizer is provided on a side of the liquid crystal layer driving array substrate away from the transparent substrate.

[0021] By adopting the above technical solution, all the circuits in the packaging layer are sealed between the two substrates, which will improve the reliability.

[0022] Preferably, it further comprises a sensor module, wherein the sensor module is arranged on a side of the liquid crystal layer driving array substrate away from the transparent substrate, and the sensor module is aligned with the area where the LED light emitting array is located.

[0023] By adopting the above technical solution, the sensor module can realize under-screen sensing of the liquid crystal display.

[0024] Preferably, the LED light emitting array comprises an LED substrate and a plurality of Micro-LED chip units arranged on the LED substrate, and gaps are arranged between the plurality of Micro-LED chip units.

[0025] By adopting the above technical solution, due to the gaps between the Micro-LED chips, the LED light array has a certain light transmittance. After the sensor module is aligned with the area where the LED light array is located, the light outside the display screen can pass through the LED light array to illuminate the sensor module, thereby realizing under-screen sensing.

[0026] Preferably, a color conversion layer is also included, and the color conversion layer is located between the upper polarizer and the encapsulation layer.

[0027] By adopting the above technical solution and setting a color conversion layer, the display of red, green and blue colors can be achieved.

[0028] In a third aspect, the present application further proposes a packaging method for an actively driven Micro-LED substrate, the method comprising the following steps:

[0029] S1: Providing an LED substrate, and manufacturing an LED light-emitting array on the LED substrate;

[0030] S2: providing a transparent substrate, etching a groove having the same size and depth as the LED light array on the transparent substrate, and bonding and fixing the LED light array in the groove;

[0031] S3: Packaging the LED light emitting array.

[0032] Preferably, the S3 specifically includes the following steps:

[0033] S31: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate;

[0034] S32: forming a second packaging layer on a side of the first packaging layer away from the LED light-emitting array;

[0035] S33: Install a driving backplane on a side of the second packaging layer away from the first packaging layer.

[0036] Preferably, the S31 specifically includes the following steps:

[0037] S311: Disposing a first insulating layer on a side of the LED light emitting array away from the transparent substrate to planarize the surface of the LED light emitting array;

[0038] S312: etching a first via hole in the first insulating layer to expose the metal electrode of the LED light-emitting array, and then evaporating metal in the first via hole to obtain a first via hole portion;

[0039] S313: evaporating first wiring portions on the surface of the first insulating layer, wherein at least one first wiring portion extends outwardly beyond an edge of the LED light-emitting array;

[0040] S314: Make a second insulating layer, planarize the first wiring portion, etch a second via and a third via on the second insulating layer, the second via is used to expose the first wiring portion, the third via is used to expose the first via portion, and evaporate metal in the second via and the third via to obtain a second via and a third via.

[0041] Preferably, the S32 specifically includes the following steps:

[0042] S321: evaporating a second wiring portion on the surface of the second insulating layer, the second wiring portion being connected to the second via portion, and at least one of the second wiring portions extending outwardly beyond the edge of the LED light-emitting array;

[0043] S322: providing a third insulating layer to planarize the second wiring portion, etching a fourth via hole and a fifth via hole on the third insulating layer, wherein the fourth via hole is used to expose the second wiring portion, and the fifth via hole is used to expose the third via hole portion, and evaporating metal in the fourth via hole and the fifth via hole to obtain a fourth via hole portion and a fifth via hole portion;

[0044] S323: vapor-depositing a third wiring portion on the surface of the third insulating layer, the third wiring portion being connected to the fifth via portion, and at least one of the third wiring portions extending outwardly beyond the edge of the LED light-emitting array;

[0045] S324: providing a fourth insulating layer, performing planarization processing on the third wiring portion, and etching a sixth via hole on the fourth insulating layer 16, wherein the sixth via hole is used to expose the third wiring portion or the fourth via hole portion;

[0046] S325: vapor-depositing a surface metal layer in the sixth via hole, wherein the vapor-deposited thickness is not less than the depth of the sixth via hole, so as to expose the surface metal layer.

[0047] Preferably, the S3 specifically includes the following steps:

[0048] S31: Arranging a TFT driving unit on the transparent substrate, wherein the TFT driving unit is arranged in a region of the transparent substrate beyond an edge of the LED light emitting array;

[0049] S32: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate;

[0050] S33: forming a second packaging layer on a side of the first packaging layer away from the LED light-emitting array.

[0051] Preferably, the step S32 specifically includes:

[0052] S321: Disposing a first insulating layer on a side of the LED light emitting array away from the transparent substrate, and performing a planarization process on the surface of the LED light emitting array;

[0053] S322: etching a first via hole and a seventh via hole in the first insulating layer, wherein the first via hole is used to expose the metal electrode of the LED light-emitting array, and the seventh via hole is used to expose the FT driving unit, and evaporating metal in the first via hole and the seventh via hole to obtain a first via hole portion and a seventh via hole portion;

[0054] S323: vapor-depositing a first wiring portion and a seventh wiring portion on a surface of the first insulating layer, wherein the first wiring portion connects the first via portion and the seventh via portion, and at least one first wiring portion extends outwardly beyond an edge of the LED light-emitting array;

[0055] S324: Set a second insulating layer, planarize the first routing portion and the seventh routing portion, etch a second via, a third via and an eighth via on the second insulating layer, the second via is used to expose the seventh routing portion, the third via is used to expose the first via portion, the eighth via is used to expose the TFT driving unit, and evaporate metal in the second via and the third via to obtain a second via portion and a third via portion.

[0056] Preferably, step S33 specifically includes:

[0057] S331: evaporating a second wiring portion on the surface of the second insulating layer, the second wiring portion connecting the second via hole and the eighth via hole, and at least one second wiring portion extending outward beyond the edge of the LED light-emitting array;

[0058] S332: providing a third insulating layer, performing planarization processing on the second wiring portion, etching a ninth via hole and a tenth via hole on the third insulating layer, wherein the ninth via hole is used to expose the third via hole, and the tenth via hole is used to expose the TFT driving unit, and evaporating metal in the ninth via hole and the tenth via hole to obtain a ninth via hole portion and a tenth via hole portion;

[0059] S333: vapor-depositing a third wiring portion on the surface of the third insulating layer, so that the third wiring portion is connected to the eighth via hole and the ninth via hole, and at least one third wiring portion extends outward beyond the edge of the LED light-emitting array;

[0060] S334: Setting a fourth insulating layer to planarize the third wiring portion.

[0061] In a fourth aspect, the present application further proposes a packaging method for a display device, the method further comprising the following steps:

[0062] S401: Arranging a liquid crystal layer and a liquid crystal layer driving array substrate on an actively driven Micro-LED substrate, wherein the liquid crystal layer is located between the actively driven Micro-LED substrate and the liquid crystal layer driving array substrate, wherein the liquid crystal layer driving array substrate includes a TFT device region and a non-TFT device driving region, wherein the non-TFT device driving region is aligned with a region where an LED light emitting array is located;

[0063] S402: Setting a color conversion layer;

[0064] S403: Setting an upper polarizer and a lower polarizer;

[0065] S404: Set the sensor module.

[0066] By adopting the above technical solution, the transparent substrate after the TFT driving unit and the LED light-emitting array are integrated is used as the upper substrate of the liquid crystal cell in the liquid crystal display. The integration of Micro-LED display and liquid crystal display can be realized, and the transparent Micro-LED display replaces the local pixel area of ​​the liquid crystal display, thereby realizing the under-screen sensing of the liquid crystal display, and there is no visual display interruption and discontinuous boundary, which can realize a complete full-screen design.

[0067] In summary, the present application includes at least one of the following beneficial technical effects:

[0068] 1. The chip is packaged by embedding the LED light-emitting array into a transparent substrate. This packaging method is not limited by the requirements of welding and bonding. The process is simple and solves the problem of inaccurate bonding.

[0069] 2. The encapsulation layer of the present application can achieve the effect of heat dissipation. Since at least one metal lead in the encapsulation layer is led out from the corresponding position of the LED light-emitting array and extends outward beyond the edge of the LED light-emitting array, the spacing size of the driving circuit can be arbitrarily specified, and is not limited by the size and structure of the Micro-LED chip. It can be designed according to the size and structure of the Micro-LED chip, which significantly reduces the process cost;

[0070] 3. The transparent substrate after the TFT driving unit and the LED light-emitting array are integrated is used as the upper substrate of the liquid crystal cell in the liquid crystal display. The integration of Micro-LED display and liquid crystal display can be realized. The transparent Micro-LED display replaces the local pixel area of ​​the liquid crystal display, thereby realizing the under-screen sensing of the liquid crystal display, and there is no visual display interruption and discontinuous boundary, which can realize a complete full-screen design. BRIEF DESCRIPTION OF THE DRAWINGS

[0071] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and are used together with the description to explain the principles of the present application. It will be easy to recognize other embodiments and many expected advantages of the embodiments because they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale with each other. The same reference numerals refer to corresponding similar parts.

[0072] Figure 1 Schematic diagram of an actively driven Micro-LED substrate in one embodiment of the present application.

[0073] Figure 2 1 is a top view of an actively driven Micro-LED substrate in one embodiment of the present application.

[0074] Figure 3 Schematic diagram of an actively driven Micro-LED substrate in another embodiment of the present application.

[0075] Figure 4 It is a schematic diagram of a display device in one embodiment of the present application.

[0076] Figure 5 It is a schematic diagram of a display device in another embodiment of the present application.

[0077] Figure 6 It is a schematic diagram of a display device in another embodiment of the present application.

[0078] Figure 7-Figure 11 It is a schematic diagram of a packaging method of an actively driven Micro-LED substrate in one embodiment of the present application.

[0079] Fig.12 It is a schematic diagram of a packaging method of an actively driven Micro-LED substrate in another embodiment of the present application.

[0080] Fig.13 It is a schematic diagram of a packaging method of a display device in one embodiment of the present application.

[0081] Description of the accompanying drawings: 1. LED substrate; 2. first semiconductor layer; 3. multi-quantum well light-emitting layer; 4. second semiconductor layer; 5. metal electrode; 6. transparent substrate; 7. first insulating layer; 81. first via portion; 82. second via portion; 83. third via portion; 84. fourth via portion; 85. fifth via portion; 86. sixth via portion; 87. seventh via portion; 88. eighth via portion; 89. ninth via portion; 810. tenth via portion; 9. first routing portion; 10. second insulating layer; 12. second routing portion; 13. third insulating layer; 15. third routing portion; 1 6. Fourth insulating layer; 17. Surface metal layer; 18. Internal wiring of the backplane; 19. Backplane drive array; 20. Common electrode unit; 21. Indium tin oxide; 22. TFT drive unit; 23. Groove; 24. Seventh wiring portion; 100. First adhesive layer; 200. Liquid crystal layer; 300. Sensor module; 400. Color conversion layer; 101. Second adhesive layer; 102. First packaging layer; 103. Second packaging layer; 201. Liquid crystal layer drive array substrate; 202. Upper polarizer; 203. Lower polarizer; 401. Color conversion substrate; 402. Color conversion unit. DETAILED DESCRIPTION

[0082] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the relevant invention are shown in the accompanying drawings.

[0083] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0084] Figure 1 This is a cross-sectional diagram of an actively driven Micro-LED substrate. Figure 2 This is a top view of the active drive Micro-LED substrate, combined with reference Figure 1 and Figure 2An actively driven Micro-LED substrate disclosed in an embodiment of the present application includes an LED light-emitting array and a transparent substrate 6.

[0085] The LED light emitting array includes an LED substrate 1 and a plurality of Micro-LED chip units arranged on the LED substrate 1. Gaps are arranged between the plurality of Micro-LED chip units, so that the LED light emitting array has a certain light transmittance.

[0086] The Micro-LED chip unit includes at least one first semiconductor layer 2, at least one multi-quantum well light-emitting layer 3, and at least one second semiconductor layer 4. The first semiconductor layer 2 is arranged on the LED substrate 1, the multi-quantum well light-emitting layer 3 is arranged on the side of the first semiconductor layer 2 away from the LED substrate 1, and the second semiconductor layer 4 is arranged on the side of the multi-quantum well light-emitting layer 3 away from the first semiconductor layer 2, so that the multi-quantum well light-emitting layer 3 is located between the first semiconductor layer 2 and the second semiconductor layer 4. The side walls of the first semiconductor layer 2, the multi-quantum well light-emitting layer 3, and the second semiconductor layer 4 are coated with an insulating layer. The first semiconductor layer 2 contains a layer of n-type doped GaN, and the first semiconductor layer 2 also contains a buffer layer. The multi-quantum well light-emitting layer 3 is composed of two semiconductor layers with different components and nanometer thicknesses with a chemical formula of AlxInyGazN (where x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) alternately stacked, and the second semiconductor layer 4 contains a layer of p-type doped GaN, and the second semiconductor layer 4 contains an electron blocking layer. Micro-LED chip units emit blue light, ultraviolet light, or near-ultraviolet light.

[0087] The LED light emitting array further includes a metal electrode 5 , which is disposed on the first semiconductor layer 2 or the second semiconductor layer 4 .

[0088] A groove 23 is formed on the transparent substrate 6 , and the LED light array is embedded in the groove 23 , and the LED light array is bonded and fixed to the inner wall of the groove 23 .

[0089] A first adhesive layer 100 and a second adhesive layer 101 are disposed in the groove 23 . The first adhesive layer 100 is fixedly connected to the bottom wall of the LED light array and the bottom wall of the groove 23 . The second adhesive layer 101 is fixedly connected to the side wall of the LED light array and the side wall of the groove 23 .

[0090] Specifically, the transparent substrate 6 needs to be pre-etched with a groove 23 of the same size as the LED light-emitting array, and adhesive glue is spin-coated on the bottom to embed the LED light-emitting array as a whole into the transparent substrate 6. After embedding, the side walls of the package on both sides are filled with adhesive glue to make the package flat and fixed. The material used for the transparent substrate 6 is a thermally conductive transparent material, such as a sapphire substrate, a glass substrate, etc.

[0091] The actively driven Micro-LED substrate further includes a packaging layer and a driving backplane. The packaging layer is arranged on the side of the LED light-emitting array away from the transparent substrate 6, and the driving backplane is arranged on the side of the packaging layer away from the transparent substrate 6. The packaging layer is provided with a surface metal layer 17 on the side away from the transparent substrate 6. The surface metal layer 17 is electrically connected to the LED light-emitting array through metal leads in the packaging layer, and the driving backplane is electrically connected to the surface metal layer 17. In the packaging layer, at least one metal lead is led out from the corresponding position of the LED light-emitting array and extends outward beyond the edge of the LED light-emitting array.

[0092] On the one hand, the packaging layer can play a role in heat dissipation. On the other hand, since there is at least one metal lead in the packaging layer that leads out from the corresponding position of the LED light-emitting array and extends outward beyond the edge of the LED light-emitting array, any specified spacing size of the driving circuit can be achieved. It is not limited by the size and structure of the Micro-LED chip, and can be designed according to the size and structure of the Micro-LED chip, which significantly reduces the process cost.

[0093] The encapsulation layer includes a first encapsulation layer 102 and a second encapsulation layer 103. The first encapsulation layer 102 is arranged on a side of the LED light-emitting array away from the transparent substrate 6, and the second encapsulation layer 103 is arranged on a side of the first encapsulation layer 102 away from the LED light-emitting array. In the first encapsulation layer 102, at least one metal lead is led out from a corresponding position of the LED light-emitting array and extends outwardly beyond the edge of the LED light-emitting array, and in the second encapsulation layer 103, at least one metal lead is led out from a corresponding position of the LED light-emitting array and extends outwardly beyond the edge of the LED light-emitting array.

[0094] The first packaging layer 102 includes a first insulating layer 7, a second insulating layer 10, a first via portion 81, a first wiring portion 9, a second via portion 82, and a third via portion 83, wherein the first via portion 81, the first wiring portion 9, the second via portion 82, and the third via portion 83 are all provided in plurality, and the first via portion 81 is connected to the metal electrode 5 of the LED light-emitting array. The first wiring portion 9 is connected to a portion of the first via portion 81, the third via portion 83 is connected to another portion of the first via portion 81, the second via portion 82 is connected to the first wiring portion 9, and the second via portion 82 extends to the surface of the first packaging layer 102 away from the LED light-emitting array.

[0095] At least one first wiring portion 9 extends outward beyond the edge of the LED light-emitting array. The first via portion 81 in the first packaging layer 102 corresponds to the arrangement of the metal electrode 5 of the Micro-LED light-emitting array. The function of the first packaging layer 102 is to separate the Micro-LED light-emitting array and the inner layer wiring, planarize the surface of the Micro-LED light-emitting array, and have a heat dissipation effect.

[0096] The second packaging layer 103 includes a third insulating layer 13, a fourth insulating layer 16, a second routing portion 12, a fourth via portion 84, a third routing portion 15, a fifth via portion 85, a sixth via portion 86 and a surface metal layer 17. The second routing portion 12 is connected to the second via portion 82, the fourth via portion 84 is connected to the second routing portion 12, the fifth via portion 85 is connected to the third via portion 83, the third routing portion 15 is connected to the fifth via portion 85, the sixth via portion 86 is connected to the third routing portion 15 or to the fourth via portion 84, the surface metal layer 17 is connected to the sixth via portion 86, at least one second routing portion 12 extends outward beyond the edge of the LED light-emitting array, and at least one third routing portion 15 extends outward beyond the edge of the LED light-emitting array.

[0097] The driving backplane includes backplane internal wiring 18, backplane driving array 19 and common electrode unit 20. The surface metal layer 17 in the second packaging layer 103 corresponds to the arrangement of the backplane driving array 19 and the common electrode unit 20 of the driving backplane. Indium tin oxide 21 is provided on one side of the driving backplane close to the surface metal layer 17, which can be directly connected to the rewired surface metal layer 17.

[0098] The specifications of the driver backplane can be of specified size to facilitate the arrangement of complex internal components such as transistors, resistors, capacitors, and voltage regulators to save costs.

[0099] The light emission direction of the actively driven Micro-LED substrate is from the LED substrate 1 to the transparent substrate 6 side, so the material of the LED substrate 1 and the transparent substrate 6 is preferably selected from materials with high transparency and good thermal conductivity, such as glass-based substrates and sapphire substrates; and the first insulating layer 7, the second insulating layer 10, the third insulating layer 13 and the fourth insulating layer 16 are preferably made of materials with good thermal conductivity, and are not limited to organic or inorganic insulating substrates.

[0100] The LED chip is embedded in a transparent substrate, and the packaging layer and the driving backplane of the rewiring are processed separately, which simplifies the manufacturing process; the process of the wiring layer and the packaging layer can realize a multi-layer setting, and is not limited to the three layers in the embodiment, which reduces the restrictions on the line width and line spacing of the rewiring process, expands the wiring area, improves the processing success rate, reduces the difficulty, and reduces the cost; small-sized LED chips of different specifications can be adapted to the same type of driving backplane, reducing the process cost.

[0101] Reference Figure 3, is an actively driven Micro-LED substrate in another embodiment of the present application. In this embodiment, a TFT driving unit 22 is arranged on a transparent substrate 6 for embedding Micro-LEDs according to a semiconductor process, and the TFT driving unit 22 is arranged in an area of ​​the transparent substrate 6 that exceeds the edge of the LED light-emitting array. The TFT driving unit 22 and the Micro-LED light-emitting array are integrated on the same transparent substrate 6 to simplify the wiring design, and the Micro-LED light-emitting array is embedded in the transparent substrate 6, which can overcome a certain height difference between the Micro-LED light-emitting array and the TFT driving unit 22, and facilitate subsequent flattening processing.

[0102] Reference Figure 4 On the other hand, the present application also discloses a display device, which includes an actively driven Micro-LED substrate, a liquid crystal layer 200 , a liquid crystal layer driving array substrate 201 and a sensor module 300 .

[0103] The liquid crystal layer 200 is located between the active drive Micro-LED substrate and the liquid crystal layer drive array substrate 201. The liquid crystal layer drive array substrate 201 includes a TFT device area and a non-TFT device drive area. The non-TFT device drive area is aligned with the area where the Micro-LED light emitting array is located.

[0104] The liquid crystal layer driving array substrate 201 is a TFT device array arranged on the upper surface of a glass substrate for driving liquid crystal. At least one TFT device is arranged correspondingly for each pixel unit. In this embodiment, no TFT device is arranged in the area aligned with the Micro-LED light emitting array on the liquid crystal layer driving array substrate 201. The picture of the entire display screen is spliced ​​by the picture displayed by the Micro-LED light emitting array and the picture displayed by the liquid crystal.

[0105] The liquid crystal layer 200 is arranged on the side of the transparent substrate 6 away from the encapsulation layer, an upper polarizer 202 is arranged on the side of the encapsulation layer away from the transparent substrate 6, and a lower polarizer 203 is arranged on the side of the liquid crystal layer driving array substrate 201 away from the transparent substrate 6. The upper polarizer 202 and the lower polarizer 203 are both aligned with the TFT device area of ​​the liquid crystal layer driving array substrate 201.

[0106] The sensor module 300 is located on the side of the liquid crystal layer driving array substrate 201 away from the transparent substrate 6, and the sensor module 300 is aligned with the area where the Micro-LED light emitting array is located. Sensors include but are not limited to image sensors, light sensors, time sensors, distance sensors, photodetectors and temperature sensors; photodetectors include but are not limited to avalanche diodes and pin diodes.

[0107] In another embodiment, referring to Figure 5 The liquid crystal layer 200 is arranged on the side of the encapsulation layer away from the transparent substrate 6, the liquid crystal layer driving array substrate 201 is arranged on the side of the liquid crystal layer 200 away from the encapsulation layer, an upper polarizer 202 is arranged on the side of the transparent substrate 6 away from the liquid crystal layer driving array substrate 201, and a lower polarizer 203 is arranged on the side of the liquid crystal layer driving array substrate 201 away from the transparent substrate 6. Since the liquid crystal is flowing, the two substrates are sealed into a closed cavity. If all the circuits in the encapsulation layer are sealed between the two substrates, the reliability will be better.

[0108] In a further embodiment, referring to Figure 6 The display device further includes a color conversion layer 400, which is disposed on a side of the active-driven Micro-LED substrate away from the liquid crystal layer 200, and an upper polarizer 202 is disposed on a side of the color conversion layer 400 away from the liquid crystal layer 200. The color conversion layer can realize the display of red, green and blue colors.

[0109] The color conversion layer 400 includes: a color conversion substrate 401, including transparent PI, transparent photoresist matrix, etc.; a color conversion unit 402, including red and green color conversion layers, or red, blue, and green color conversion layers. The color conversion layer includes color conversion materials; and a black photoresist 403, including black encapsulation glue and photoresist.

[0110] When the Micro-LED chip unit emits blue light, the red and green light color conversion layers are used to convert part of the blue light emitted by the Micro-LED chip unit into red and green light, realizing Micro-LED display sub-pixels of the three primary colors of red, green and blue, thereby achieving full-color display.

[0111] When the Micro-LED chip unit emits ultraviolet light or near-ultraviolet light, red, blue, and green light color conversion layers are used to convert the ultraviolet light or near-ultraviolet light emitted by the Micro-LED chip unit into red, blue, and green light, respectively, to realize Micro-LED display sub-pixels of the three primary colors of red, green, and blue, thereby achieving full-color display.

[0112] Color conversion materials include, but are not limited to, quantum dots, nanocrystalline luminescent materials, rare earth ion doped phosphors, and manganese ion doped phosphors. 3+ Doped YAG phosphor, Pr 3+ Doped YAG phosphor, Eu 3+ Doped YAG phosphor, Eu 2+ Doped YAG phosphor, Tm 3+ Doped YAG phosphor, Gd 3+ Any one of doped YAG phosphors; rare earth ion Eu 2+Doped CaAlSiN3, Eu 2+ Doped with Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)2Si5N8:Eu 2+ Any one of: InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots; Mn 4+ Doped K2SiF6 phosphor, Mn 4+ Doped K2GeF6 phosphor, Mn 4+ Any one of the K2TiF6 phosphors; Eu 2+ Doped β-Sialon, Eu 2+ Any one of doped Li2CaSiO4; or a combination of any two of the above-mentioned luminescent materials, or a combination of any three.

[0113] In a further embodiment, the Micro-LED chip unit is provided with a first semiconductor layer 2 and a plurality of island-shaped light-emitting structures (not shown in the figure), the width of the island-shaped light-emitting structure is less than the width of the first semiconductor layer 2, the island-shaped light-emitting structure is provided with a third semiconductor layer, a multi-quantum well light-emitting layer 3, a second semiconductor layer 4 and a current expansion layer, the multi-quantum well light-emitting layer 3 is provided between the third semiconductor layer and the second semiconductor layer 4, the third semiconductor layer has the same composition as the first semiconductor layer 2, and the surface of the third semiconductor layer away from the multi-quantum well light-emitting layer 3 is connected to the first semiconductor layer 2; the side wall of a single island-shaped light-emitting structure is provided with an inner wall insulating layer, and a flattening layer is filled between the island-shaped light-emitting structures. The island-shaped light-emitting structure is cylindrical, the diameter of the island-shaped light-emitting structure is between 150 nanometers and 2 microns, and the area of ​​the non-island-shaped light-emitting structure on the surface of the first semiconductor layer 2 facing the third semiconductor layer is covered with a mask layer, and the mask layer is metal titanium, or silicon dioxide, or silicon nitride. When the diameter of the island-shaped light-emitting structure is between 1 micron and 2 microns, the light emitted by the multi-quantum well light-emitting layer 3 and emitted from the first semiconductor layer 2 is blue light. When the diameter of the island-shaped light-emitting structure is between 500 nanometers and 1 micron, the light emitted by the multi-quantum well light-emitting layer 3 and emitted from the first semiconductor layer 2 is green light. When the diameter of the island-shaped light-emitting structure is between 150 nanometers and 200 nanometers, the light emitted by the multi-quantum well light-emitting layer 3 and emitted from the first semiconductor layer 2 is red light. Therefore, in the LED light-emitting array, according to the arrangement requirements of red, blue, and green sub-pixels, Micro-LED chip units with island-shaped light-emitting structures of different sizes are arranged at corresponding positions, so that Micro-LED display sub-pixels of the three primary colors of red, green, and blue can be realized, thereby realizing full-color display without the need for a color conversion layer.

[0114] The above embodiments can realize the Micro-LED packaging of a multifunctional display screen. The picture of the entire display screen is spliced ​​by the picture displayed by the Micro-LED light-emitting array and the picture displayed by the liquid crystal. The packaged display screen can realize multifunctional sensing without affecting the display resolution, such as a screen used for iris recognition, image acquisition, and environmental data recording. The packaged display screen can realize visible light communication transmission without affecting the display resolution and the accuracy of the detection device, so a multifunctional display screen effect with both display and optical communication can be achieved. It can be understood that the above embodiments are the polarized liquid crystal part of the liquid crystal display, and other components such as the light-emitting backplane are not shown in the figure. It mainly explains the use of Micro-LED driving and display in the liquid crystal screen.

[0115] On the other hand, the present application also discloses an embodiment of a packaging method for an actively driven Micro-LED substrate, the method comprising the following steps:

[0116] S1: providing an LED substrate and manufacturing an LED light-emitting array on the LED substrate;

[0117] In a specific embodiment, refer to Figure 7 , S1 specifically includes the following steps:

[0118] An LED substrate 1 is provided, a first semiconductor layer 2, a multi-quantum well light-emitting layer 3, and a second semiconductor layer 4 are grown on the LED substrate 1, and then metal electrodes 5 are evaporated on the first semiconductor layer 2 and the second semiconductor layer 4, respectively, to obtain an LED light-emitting array.

[0119] S2: providing a transparent substrate 6, etching a groove 23 having the same size and depth as the LED light array on the transparent substrate 6, and bonding and fixing the LED light array in the groove 23;

[0120] In a specific embodiment, refer to Figure 7 , a groove 23 of the same size and depth as the LED light array is etched on the transparent substrate 6, and a viscous glue is spin-coated on the bottom to form a first viscous glue layer 100, the LED light array is fixed in the groove 23, and then the viscous glue is encapsulated again at the edge to form a second viscous glue layer 101, at this time, the metal electrode 5 of the LED light array faces outward;

[0121] S3: Encapsulating the LED light emitting array;

[0122] In a specific embodiment, S3 specifically includes the following steps:

[0123] S31: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate 6;

[0124] In a specific embodiment, refer to Figure 8 and Fig. 9 , S31 specifically includes the following steps:

[0125] S311: a first insulating layer 7 is provided on a side of the LED light emitting array away from the transparent substrate 6 to planarize the surface of the LED light emitting array.

[0126] S312 : etching a first via hole in the first insulating layer 7 to expose the metal electrode 5 of the LED light-emitting array, and then evaporating metal in the first via hole to obtain a first via hole portion 81 .

[0127] S313: vapor-depositing first wiring portions 9 on the surface of the first insulating layer 7, wherein at least one first wiring portion 9 extends outward beyond the edge of the LED light-emitting array;

[0128] S314: Make a second insulating layer 10, planarize the first wiring portion 9, etch a second via and a third via on the second insulating layer 10, the second via is used to expose the first wiring portion 9, the third via is used to expose the first via portion 81, and evaporate metal in the second via and the third via to obtain a second via portion 82 and a third via portion 83.

[0129] S32: forming a second packaging layer on a side of the first packaging layer away from the LED light-emitting array;

[0130] In a specific embodiment, refer to Fig. 9 and Fig.10 , S32 specifically includes the following steps:

[0131] S321: vapor-depositing a second wiring portion 12 on the surface of the second insulating layer 10, the second wiring portion 12 being connected to the second via portion 82, and at least one of the second wiring portions 12 extending outwardly beyond the edge of the LED light-emitting array;

[0132] S322: providing a third insulating layer 13 to planarize the second wiring portion 12, etching a fourth via hole and a fifth via hole on the third insulating layer 13, wherein the fourth via hole is used to expose the second wiring portion 12, and the fifth via hole is used to expose the third via hole portion 83, and evaporating metal in the fourth via hole and the fifth via hole to obtain a fourth via hole portion 84 and a fifth via hole portion 85;

[0133] S323: vapor-depositing a third wiring portion 15 on the surface of the third insulating layer 13, the third wiring portion 15 being connected to the fifth via portion 85, and at least one of the third wiring portions 15 extending outward beyond the edge of the LED light-emitting array;

[0134] S324: providing a fourth insulating layer 16, performing a planarization process on the third wiring portion 15, and etching a sixth via hole on the fourth insulating layer 16, wherein the sixth via hole is used to expose the third wiring portion 15 or the fourth via hole portion 84;

[0135] S325: vapor-deposit metal in the sixth via hole, the vapor-deposited thickness being no less than the depth of the sixth via hole, so as to expose the surface metal layer 17

[0136] S33 : Install a driving backplane on a side of the second encapsulation layer 103 away from the first encapsulation layer 102 .

[0137] In a specific embodiment, Fig.11 As shown, S33 specifically includes the following steps: the driving array 19 and the common electrode unit 20 of the driving backplane correspond to the surface metal 17 of the packaged Micro-LED light-emitting array respectively, and the indium tin oxide 21 on the driving surface is directly connected to the expression metal 17, so that the electrical signal that actively drives the Micro-LED light-emitting array is transmitted through the internal wiring and the corresponding pin pin.

[0138] In another embodiment, referring to Fig.12 The present application discloses another packaging method of an actively driven Micro-LED substrate, the method comprising the following steps:

[0139] S1: providing an LED substrate 1, and manufacturing an LED light-emitting array on the LED substrate 1;

[0140] S2: providing a transparent substrate 6, etching a groove 23 having the same size and depth as the LED light array on the transparent substrate 6, and bonding and fixing the LED light array in the groove 23;

[0141] S3: Encapsulating the LED light emitting array.

[0142] In a specific embodiment, S3 specifically includes the following steps:

[0143] S31: Disposing a TFT driving unit 22 on the transparent substrate 6, wherein the TFT driving unit 22 is disposed in a region of the transparent substrate 6 that exceeds an edge of the LED light-emitting array;

[0144] S32: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate 6;

[0145] In a specific embodiment, step S32 specifically includes:

[0146] S321: Disposing a first insulating layer 7 on a side of the LED light emitting array away from the transparent substrate 6, and performing a planarization process on the surface of the LED light emitting array;

[0147] S322: etching a first via hole and a seventh via hole in the first insulating layer 7, wherein the first via hole is used to expose the metal electrode 5 of the LED light-emitting array, and the seventh via hole is used to expose the TFT driving unit 22, and evaporating metal in the first via hole and the seventh via hole to obtain a first via hole portion 81 and a seventh via hole portion 87;

[0148] S323: vapor-depositing a first wiring portion 9 and a seventh wiring portion 24 on the surface of the first insulating layer 7, wherein the first wiring portion 9 connects the first via portion 81 and the seventh via portion 87, and at least one first wiring portion 9 extends outward beyond the edge of the LED light-emitting array;

[0149] S324: Set a second insulating layer 10, planarize the first routing portion 9 and the seventh routing portion 24, etch a second via, a third via and an eighth via on the second insulating layer 10, the second via is used to expose the seventh routing portion 24, the third via is used to expose the first via portion 81, the eighth via is used to expose the TFT driving unit 22, and evaporate metal in the second via and the third via to obtain a second via portion 82 and a third via portion 83.

[0150] S33: Making a second packaging layer on the side of the first packaging layer away from the LED light-emitting array

[0151] Step S33 specifically includes:

[0152] S331: evaporating a second wiring portion 12 on the surface of the second insulating layer 10, the second wiring portion 12 connecting the second via portion 82 and the eighth via portion 88, and at least one second wiring portion 12 extending outward beyond the edge of the LED light-emitting array;

[0153] S332: providing a third insulating layer 13, performing a planarization process on the second wiring portion 12, etching a ninth via hole and a tenth via hole on the third insulating layer 13, wherein the ninth via hole is used to expose the third via hole portion 83, and the tenth via hole is used to expose the TFT driving unit 22, and evaporating metal in the ninth via hole and the tenth via hole to obtain a ninth via hole portion 89 and a tenth via hole portion 810;

[0154] S333: vapor-depositing a third wiring portion 15 on the surface of the third insulating layer 13, so that the third wiring portion 15 is connected to the ninth via portion 89 and the tenth via portion 810, and at least one third wiring portion 15 extends outward beyond the edge of the LED light-emitting array;

[0155] S334 : providing a fourth insulating layer 16 to planarize the third wiring portion 15 .

[0156] On the other hand, refer to Fig.13 The present application also discloses another embodiment of a packaging method for a display device, the method comprising the following steps:

[0157] S401: a liquid crystal layer 200 and a liquid crystal layer driving array substrate 201 are arranged on the active driving Micro-LED substrate, wherein the liquid crystal layer 200 is located between the active driving Micro-LED substrate and the liquid crystal layer driving array substrate 201, and the liquid crystal layer driving array substrate 201 includes a TFT device region and a non-TFT device driving region, wherein the non-TFT device driving region is aligned with the region where the Micro-LED light emitting array is located;

[0158] In a specific embodiment, the liquid crystal layer 200 is disposed on a side of the encapsulation layer away from the transparent substrate 6 . In other embodiments, the liquid crystal layer 200 may also be disposed on a side of the transparent substrate 6 away from the encapsulation layer.

[0159] S402: Setting the color conversion layer 400;

[0160] In a specific embodiment, the color conversion layer 400 is arranged on a side of the active drive Micro-LED substrate away from the liquid crystal layer 200, and the color conversion layer 400 includes: a color conversion substrate 401, including a transparent PI, a transparent photoresist matrix, etc.; a color conversion unit 402, including red light, blue light, and green light color conversion layers 400, including various red, green, and blue excitation color conversion materials; a black photoresist 403, including a black encapsulation glue and a photoresist;

[0161] S403: Setting the upper polarizer 202 and the lower polarizer 203;

[0162] In a specific embodiment, an upper polarizer 202 is disposed on a side of the color conversion layer 400 away from the liquid crystal layer driving array substrate 201 , and a lower polarizer 203 is disposed on a side of the liquid crystal layer driving array substrate 201 away from the transparent substrate 6 .

[0163] S404: Set the sensor module 300.

[0164] The sensor module 300 is arranged on the side of the liquid crystal layer driving array substrate 201 away from the transparent substrate 6, and the sensor module 300 is aligned with the area where the Micro-LED light emitting array is located. Sensors include but are not limited to image sensors, light sensors, time sensors, distance sensors, photodetectors and temperature sensors; photodetectors include but are not limited to avalanche diodes and pin diodes.

[0165] The above describes the specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0166] In the description of the present application, it should be understood that the terms "upper", "lower", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The wording 'comprising' does not exclude the presence of elements or steps not listed in the claims. The wording 'one' or 'an' preceding an element does not exclude the presence of a plurality of such elements. The simple fact that certain measures are recorded in mutually different dependent claims does not indicate that a combination of these measures cannot be used for improvement. Any reference symbols in the claims should not be interpreted as limiting the scope.

Claims

1. An actively driven Micro-LED substrate, comprising an LED light-emitting array and a transparent substrate (6), characterized in that: The transparent substrate (6) is provided with a groove (23), and the LED light-emitting array is embedded in the groove (23); the LED light-emitting array comprises an LED substrate and a plurality of Micro-LED chip units arranged on the LED substrate, and gaps are arranged between the plurality of Micro-LED chip units; a first adhesive layer (100) and a second adhesive layer (101) are arranged in the groove (23), the first adhesive layer (100) is fixedly connected to the bottom wall of the LED light-emitting array and the bottom wall of the groove (23), and the second adhesive layer (101) is fixedly connected to the side wall of the LED light-emitting array and the side wall of the groove (23).

2. The active-driven Micro-LED substrate according to claim 1, characterized in that: It also comprises a packaging layer, which is arranged on a side of the LED light-emitting array away from the transparent substrate (6), and in which at least one metal lead is led out from a corresponding position of the LED light-emitting array and extends outwardly beyond the edge of the LED light-emitting array.

3. The active-driven Micro-LED substrate according to claim 2, characterized in that: It also comprises a driving backplane, the driving backplane being arranged on a side of the packaging layer away from the transparent substrate (6), the packaging layer being provided with a surface metal layer (17) on a side away from the transparent substrate (6), the surface metal layer (17) being electrically connected to the LED light-emitting array via metal leads in the packaging layer, and the driving backplane being electrically connected to the surface metal layer (17).

4. The active-driven Micro-LED substrate according to claim 3, characterized in that: The packaging layer comprises a first packaging layer (102) for planarizing the surface of an LED light-emitting array and a second packaging layer (103) for separating a surface metal layer (17) and an inner layer wiring, wherein the first packaging layer (102) is arranged on a side of the LED light-emitting array away from a transparent substrate (6), and the second packaging layer (103) is arranged on a side of the first packaging layer (102) away from the LED light-emitting array.

5. The active-driven Micro-LED substrate according to claim 4, characterized in that: The first packaging layer (102) comprises a plurality of first via portions (8), a first routing portion (9), a second via portion (82) and a third via portion (83); the first via portion (8) is connected to a metal electrode of an LED light-emitting array; the first routing portion (9) is connected to a portion of the first via portion (8); the third via portion (83) is connected to another portion of the first via portion (8); the second via portion (82) is connected to the first routing portion (9) layer; the second via portion (82) extends to a surface of the first packaging layer (102) away from a side of the LED light-emitting array; and at least one of the first routing portions (9) extends outwardly beyond an edge of the LED light-emitting array.

6. The active-driven Micro-LED substrate according to claim 5, characterized in that: The second packaging layer (103) comprises a plurality of second routing portions (12), a fourth via portion (84), a third routing portion (15), a fifth via portion (85), a sixth via portion (86) and a surface metal layer (17); the second routing portion (12) is connected to a portion of the second via portion (82); the fourth via portion (84) is connected to the second routing portion (12); the fifth via portion (85) is connected to another portion of the second via portion (82); the third routing portion (15) is connected to the fifth via portion (85); the sixth via portion (86) is connected to the third routing portion (15) or to the fourth via portion (84); the surface metal layer (17) is connected to the sixth via portion (86); at least one of the second routing portions (12) extends outward beyond the edge of the LED light-emitting array; and at least one of the third routing portions (15) extends outward beyond the edge of the LED light-emitting array.

7. The active-driven Micro-LED substrate according to claim 2, characterized in that: It also comprises a TFT driving unit (22), wherein the TFT driving unit (22) is arranged in a region of the transparent substrate (6) beyond the edge of the LED light-emitting array.

8. A display device, characterized in that: The invention comprises an actively driven Micro-LED substrate as claimed in any one of claims 1 to 7, and further comprises a liquid crystal layer (200) and a liquid crystal layer driven array substrate (201), wherein the liquid crystal layer (200) is located between the actively driven Micro-LED substrate and the liquid crystal layer driven array substrate (201), and the liquid crystal layer driven array substrate (201) comprises a TFT device region and a non-TFT device driven region, and the non-TFT device driven region is aligned with the region where the LED light emitting array is located.

9. A display device according to claim 8, characterized in that: The liquid crystal layer (200) is located on a side of the transparent substrate (6) away from the encapsulation layer, an upper polarizer (202) is provided on the side of the encapsulation layer away from the transparent substrate (6), and a lower polarizer (203) is provided on the side of the liquid crystal layer driving array substrate (201) away from the transparent substrate (6).

10. A display device according to claim 8, characterized in that: The liquid crystal layer (200) is located on a side of the encapsulation layer away from the transparent substrate (6); an upper polarizer (202) is provided on a side of the transparent substrate (6) away from the liquid crystal layer driving array substrate (201); and a lower polarizer (203) is provided on a side of the liquid crystal layer driving array substrate (201) away from the transparent substrate (6).

11. A display device according to claim 9 or 10, characterized in that: It also comprises a sensor module (300), wherein the sensor module (300) is arranged on a side of the liquid crystal layer driving array substrate (201) away from the transparent substrate (6), and the sensor module (300) is aligned with the area where the LED light emitting array is located.

12. A display device according to claim 11, characterized in that: It also includes a color conversion layer (400), wherein the color conversion layer (400) is located between the upper polarizer (202) and the actively driven Micro-LED substrate.

13. A packaging method for an actively driven Micro-LED substrate according to any one of claims 1 to 7, characterized in that: The method comprises the following steps: S1: Providing an LED substrate, and manufacturing an LED light-emitting array on the LED substrate; S2: providing a transparent substrate, etching a groove having the same size and depth as the LED light array on the transparent substrate, and bonding and fixing the LED light array in the groove; S3: Packaging the LED light emitting array.

14. The packaging method of an active-driven Micro-LED substrate according to claim 13, characterized in that: The S3 specifically includes the following steps: S31: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate; S32: forming a second packaging layer on a side of the first packaging layer away from the LED light-emitting array; S33: Install a driving backplane on a side of the second packaging layer away from the first packaging layer.

15. The packaging method of an actively driven Micro-LED substrate according to claim 14, characterized in that: The S31 specifically includes the following steps: S311: Disposing a first insulating layer on a side of the LED light emitting array away from the transparent substrate to planarize the surface of the LED light emitting array; S312: etching a first via hole in the first insulating layer to expose the metal electrode of the LED light-emitting array, and then evaporating metal in the first via hole to obtain a first via hole portion; S313: evaporating first wiring portions on the surface of the first insulating layer, wherein at least one first wiring portion extends outwardly beyond an edge of the LED light-emitting array; S314: Make a second insulating layer, planarize the first wiring portion, etch a second via and a third via on the second insulating layer, the second via is used to expose the first wiring portion, the third via is used to expose the first via portion, and evaporate metal in the second via and the third via to obtain a second via and a third via.

16. The packaging method of an active-driven Micro-LED substrate according to claim 14, characterized in that: The S32 specifically includes the following steps: S321: evaporating a second wiring portion on the surface of the second insulating layer, the second wiring portion being connected to the second via portion, and at least one of the second wiring portions extending outwardly beyond the edge of the LED light-emitting array; S322: providing a third insulating layer to planarize the second wiring portion, etching a fourth via hole and a fifth via hole on the third insulating layer, wherein the fourth via hole is used to expose the second wiring portion, and the fifth via hole is used to expose the third via hole portion, and evaporating metal in the fourth via hole and the fifth via hole to obtain a fourth via hole portion and a fifth via hole portion; S323: vapor-depositing a third wiring portion on the surface of the third insulating layer, the third wiring portion being connected to the fifth via portion, and at least one of the third wiring portions extending outwardly beyond the edge of the LED light-emitting array; S324: providing a fourth insulating layer, performing a planarization process on the third wiring portion, and etching a sixth via hole on the fourth insulating layer, wherein the sixth via hole is used to expose the third wiring portion or the fourth via hole portion; S325: vapor-depositing a surface metal layer in the sixth via hole, wherein the vapor-deposited thickness is not less than the depth of the sixth via hole, so as to expose the surface metal layer.

17. The packaging method of an active-driven Micro-LED substrate according to claim 13, characterized in that: The S3 specifically includes the following steps: S31: Arranging a TFT driving unit on the transparent substrate, wherein the TFT driving unit is arranged in a region of the transparent substrate beyond an edge of the LED light emitting array; S32: forming a first encapsulation layer on a side of the LED light emitting array away from the transparent substrate; S33: forming a second packaging layer on a side of the first packaging layer away from the LED light-emitting array.

18. The packaging method of an active-driven Micro-LED substrate according to claim 17, characterized in that: The step S32 specifically includes: S321: Disposing a first insulating layer on a side of the LED light emitting array away from the transparent substrate, and performing a planarization process on the surface of the LED light emitting array; S322: etching a first via hole and a seventh via hole in the first insulating layer, wherein the first via hole is used to expose the metal electrode of the LED light-emitting array, and the seventh via hole is used to expose the TFT driving unit, and evaporating metal in the first via hole and the seventh via hole to obtain a first via hole portion and a seventh via hole portion; S323: vapor-depositing a first wiring portion and a seventh wiring portion on a surface of the first insulating layer, wherein the first wiring portion connects the first via portion and the seventh via portion, and at least one first wiring portion extends outwardly beyond an edge of the LED light-emitting array; S324: Set a second insulating layer, planarize the first routing portion and the seventh routing portion, etch a second via, a third via and an eighth via on the second insulating layer, the second via is used to expose the seventh routing portion, the third via is used to expose the first via portion, the eighth via is used to expose the TFT driving unit, and evaporate metal in the second via and the third via to obtain a second via portion and a third via portion.

19. The packaging method of an active-driven Micro-LED substrate according to claim 17, characterized in that: The step S33 specifically includes: S331: evaporating a second wiring portion on the surface of the second insulating layer, the second wiring portion connecting the second via hole and the eighth via hole, and at least one second wiring portion extending outward beyond the edge of the LED light-emitting array; S332: providing a third insulating layer, performing planarization processing on the second wiring portion, etching a ninth via hole and a tenth via hole on the third insulating layer, wherein the ninth via hole is used to expose the third via hole, and the tenth via hole is used to expose the TFT driving unit, and evaporating metal in the ninth via hole and the tenth via hole to obtain a ninth via hole portion and a tenth via hole portion; S333: vapor-depositing a third wiring portion on the surface of the third insulating layer, so that the third wiring portion is connected to the eighth via hole and the ninth via hole, and at least one third wiring portion extends outward beyond the edge of the LED light-emitting array; S334: Setting a fourth insulating layer to planarize the third wiring portion.

20. A method for packaging a display device, characterized in that: The following steps are involved: S401: Arranging a liquid crystal layer and a liquid crystal layer driven array substrate on the actively driven Micro-LED substrate according to any one of claims 1 to 7, wherein the liquid crystal layer is located between the actively driven Micro-LED substrate and the liquid crystal layer driven array substrate, wherein the liquid crystal layer driven array substrate comprises a TFT device region and a non-TFT device driven region, wherein the non-TFT device driven region is aligned with a region where an LED light emitting array is located; S402: Setting a color conversion layer; S403: Setting an upper polarizer and a lower polarizer; S404: Set the sensor module.

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