Semiconductor vacuum piping and cleaning method and semiconductor manufacturing equipment

Abstract

The present invention discloses a semiconductor vacuum piping and cleaning method and semiconductor manufacturing equipment, belonging to the field of semiconductor technology, and solves the problem that the powder in the vacuum piping in the prior art cannot be fully removed. The semiconductor vacuum piping of the present invention comprises a vacuum piping body and a plasma processing module; one end of the vacuum piping body is connected to the process chamber, and the other end is connected to the vacuum pump; the plasma processing module is fixedly arranged in the gas channel of the vacuum piping body, and is used to generate plasma to burn and remove the powder or tail gas in the gas channel of the vacuum piping body. The present invention is suitable for removing powder in vacuum piping.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor technology, and in particular relates to a semiconductor vacuum piping and cleaning method and semiconductor manufacturing equipment. Background Art

[0002] When wafers are processed under vacuum conditions in the process chamber, the exhaust gas generated is pumped into the exhaust gas treatment system and then discharged. If the exhaust gas cannot be completely removed, powder will be deposited in the vacuum piping, resulting in poor pumping performance. Powder deposition causes blockage of the vacuum piping, which will cause contamination in the process chamber, increase particles, and lead to wafer scrapping. Regular equipment maintenance and maintenance will be more frequent, resulting in increased losses.

[0003] In order to completely remove the powder, the hardware needs to be set up and the vacuum pipe needs to be cleaned regularly. The existing method of removing powder on the inner wall of the vacuum pipe is to set a heating jacket outside the vacuum pipe to heat the vacuum pipe, maintain the temperature of the vacuum pipe, prevent the temperature of the exhaust gas from dropping, and prevent the dust from being deposited on the inner wall of the vacuum pipe. At the same time, hot N2 is introduced into the vacuum pipe to remove the powder. The existing technology cannot fully remove the powder. Summary of the invention

[0004] In view of the above analysis, the present invention aims to provide a semiconductor vacuum piping and cleaning method and semiconductor manufacturing equipment to solve the problem that the powder in the vacuum piping cannot be fully removed in the prior art.

[0005] The purpose of the present invention is mainly achieved through the following technical solutions:

[0006] In one aspect, the present invention provides a semiconductor vacuum piping, comprising a vacuum piping body and a plasma processing module;

[0007] One end of the vacuum pipe body is connected to the process chamber, and the other end is connected to the vacuum pump;

[0008] The plasma processing module is fixedly arranged in the gas channel of the vacuum piping body, and is used to generate plasma to burn and remove the powder or tail gas in the gas channel of the vacuum piping body.

[0009] Further, the vacuum pipe body includes a first vacuum pipe and a second vacuum pipe;

[0010] One end of the first vacuum pipe is connected to the process chamber, and one end of the second vacuum pipe is connected to the vacuum pump;

[0011] The first vacuum pipe and the second vacuum pipe are sealed and connected via a pipeline connection assembly.

[0012] Further, the plasma processing module includes a housing and a plasma generator;

[0013] The plasma generator comprises an Al base disk, which is cylindrical, and the axial direction of the Al base disk is the same as the flow direction of the exhaust gas.

[0014] Furthermore, the plasma generators are provided in plurality and are evenly arranged in the shell.

[0015] Furthermore, the Al substrate is provided with electrodes for connecting to an AC power source.

[0016] Furthermore, the plasma generator is grounded.

[0017] Furthermore, the plasma processing module is provided with an air inlet pipeline for introducing a working gas for generating plasma;

[0018] The air intake pipeline includes an air intake main line and air intake branches; the number of the air intake branches is the same as the number of the Al base discs.

[0019] Furthermore, the semiconductor vacuum piping also includes a vacuum piping blockage sensing system.

[0020] Furthermore, the semiconductor vacuum piping also includes a vacuum piping branch.

[0021] In another aspect, the present invention provides a semiconductor manufacturing apparatus including a semiconductor vacuum piping.

[0022] In another aspect, the present invention provides a vacuum piping cleaning method, comprising:

[0023] After the process chamber starts to work, the plasma processing module arranged in the gas channel of the vacuum pipe body is turned on;

[0024] The tail gas generated in the process chamber enters the gas channel of the vacuum pipe body under the suction action of the vacuum pump;

[0025] The exhaust gas is burned and decomposed under the action of plasma.

[0026] Compared with the prior art, the present invention can achieve at least one of the following technical effects:

[0027] 1) In order to suppress powder deposition and remove powder already deposited on the vacuum piping body, the present invention provides a plasma processing module to form plasma in the gas channel of the vacuum piping body, and the plasma burns and removes the powder entering the vacuum piping body.

[0028] On the one hand, the device of the present invention can completely remove the powder in the vacuum piping body; on the other hand, the present invention does not remove powder by heating the inside / outside of the vacuum piping body and maintaining the overall temperature of the vacuum piping body, but rather sets a plasma processing module for burning powder in the gas channel of the vacuum piping body (the connection part of the vacuum piping body or the inside of the vacuum piping body) to generate plasma in the early stage to remove powder, thereby minimizing the design of the invention.

[0029] 2) In order to effectively remove powder, preferably, a plurality of plasma generators are provided and evenly arranged in the housing.

[0030] 3) Multiple plasma generators are evenly arranged around the shell axis in a circular pattern on one side close to the shell side wall. During the flow of exhaust gas, powder will be evaporated onto the wall of the vacuum pipe. Placing the plasma generator close to the shell side wall can improve the powder removal effect.

[0031] 4) The plasma treatment module works continuously and starts to remove powder at the initial position. Powder will never be deposited inside the vacuum piping body, and the powder can be effectively and fully removed.

[0032] 5) The plasma processing module operates periodically, which can not only remove the powder deposited on the vacuum piping body, but also avoid the waste of power and working gas.

[0033] 6) Placing the plasma processing module at the connection point of two vacuum pipes can avoid opening holes on the vacuum pipes for passing the air intake pipes and power connection lines, reduce the operation of the vacuum pipes, and ensure the sealing performance.

[0034] Other features and advantages of the present invention will be described in the following description, and part of them may become obvious from the description, or may be understood by practicing the present invention. The purpose and other advantages of the present invention may be realized and obtained by the structures particularly pointed out in the written description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The drawings are only for the purpose of illustrating particular embodiments and are not to be considered limiting of the present invention. Like reference numerals refer to like components throughout the drawings.

[0036] Figure 1 Schematic diagram of powder accumulation;

[0037] Figure 2 Schematic diagram of the device of the present invention.

[0038] Figure 3 A schematic diagram of a plasma generator disposed at the center of the shell;

[0039] Figure 4 Schematic diagram of a plasma generator arranged circumferentially around an axis;

[0040] Figure 5 Another schematic diagram of a plasma generator disposed at the center of the housing;

[0041] Figure 6 Another schematic diagram of the plasma generator being arranged circumferentially around an axis;

[0042] Figure 7 Schematic diagram of embodiment 1;

[0043] Figure 8 Schematic diagram of embodiment 2;

[0044] Fig. 9 Schematic diagram of pipeline connection components.

[0045] Reference numerals:

[0046] 1-vacuum piping; 2-plasma processing module; 201-shell; 202-plasma generator; 2021-Al base plate; 2022-first electrode; 2023-second electrode; 2024-AC power supply; 2025-inlet pipeline; 2026-inlet branch; 3-process chamber; 4-powder; 5-center ring; 6-first sealing centering; 601-first locking groove; 602-first protrusion; 603-first mounting groove; 7-first flange; 701-second locking groove; 702-second protrusion; 8-second sealing centering; 801-third locking groove; 802-third protrusion; 803-second mounting groove; 9-second flange; 901-fourth locking groove; 902-fourth protrusion; 10-turntable; 1001-third mounting groove; 11-sealing ring. DETAILED DESCRIPTION

[0047] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0048] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may further design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0049] In the context of the present disclosure, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element or an intervening layer / element may exist therebetween. In addition, if a layer / element is "on" another layer / element in one orientation, the layer / element may be "below" the other layer / element when the orientation is reversed.

[0050] A semiconductor vacuum piping comprises a vacuum piping body 1 and a plasma processing module 2; one end of the vacuum piping body 1 is connected to a process chamber 3, and the other end is connected to a vacuum pump; the plasma processing module 2 is fixedly arranged in a gas channel of the vacuum piping body, and is used to generate plasma to burn and remove powder or tail gas in the gas channel of the vacuum piping body.

[0051] The plasma processing module 2 includes a housing 201 and a plasma generator 202. A plurality of plasma generators 202 are provided and are evenly arranged in the housing 201. Preferably, the semiconductor vacuum piping further includes a vacuum piping blockage sensing system and / or a vacuum piping branch.

[0052] A semiconductor manufacturing device such as Figure 2 As shown, it includes the semiconductor vacuum piping, process chamber 3 and vacuum pump. One end of the vacuum piping body 1 is connected to the process chamber 3, and the other end is connected to the vacuum pump; the plasma processing module 2 is arranged at the connection part of the two vacuum piping bodies 1 or arranged in the vacuum piping body 1; under the action of plasma, the powder entering the vacuum piping body 1 is burned and removed.

[0053] When the process chamber 3 is in operation, tail gas is generated. Under the action of the vacuum pump, the tail gas is discharged through the vacuum pipe body 1. The tail gas will deposit powder 4 in the vacuum pipe body 1. Figure 1 As shown, the accumulated powder 4 in the vacuum piping body 1 will cause blockage, resulting in poor pressure control of the process chamber 3, thereby causing process variation (CD) and inducing particle generation. In order to suppress powder deposition and remove the powder that has been deposited on the vacuum piping body 1, the present invention sets a plasma processing module 2, forms plasma in the vacuum piping body 1, and the plasma burns and removes the powder that enters the vacuum piping body 1. The plasma processing module 2 needs to be set in the vacuum piping or cooperate with the vacuum piping, so the size of the plasma processing module 2 is small, which is called a microchip.

[0054] On the one hand, the device of the present invention can completely remove the powder in the vacuum piping body 1; on the other hand, the present invention does not remove the powder by heating the inside / outside of the vacuum piping body 1 and maintaining the overall temperature of the vacuum piping body 1, but sets a plasma processing module 2 for burning powder at the connection part of the vacuum piping body 1 or in the vacuum piping body 1, generates plasma in the early stage, removes the powder, and minimizes the design of the invention. The heat energy generated by the plasma can also suppress the evaporation of smoke.

[0055] Specifically, the plasma processing module 2 includes a shell 201 and a plasma generator 202 . The shell 201 is cylindrical, and the plasma generator 202 is disposed inside the shell 201 .

[0056] like Figure 3-6 As shown, the plasma generator 202 includes an Al substrate 2021, which is cylindrical, and the axial direction of the cylindrical Al substrate 2021 is the same as the flow direction of the exhaust gas. An electrode is provided on the Al substrate 2021 for connecting to an AC power source 2024, and the Al substrate 2021 is grounded. When an AC current is introduced to the Al substrate 2021, plasma can be generated to burn the powder.

[0057] Specifically, the first electrode 2022 and the second electrode 2023 are provided on the Al substrate 2021, the first electrode 2022 is provided on the inner surface of the Al substrate 2021, and the second electrode 2023 is provided on the outer surface of the Al substrate 2021. The first electrode 2022 and the second electrode 2023 are connected to an AC power source 2024, and an AC current is applied to the Al substrate 2021. Preferably, the first electrode 2022 is in a ring shape provided along the inner surface, and the second electrode 2023 is in a ring shape provided along the outer surface.

[0058] In order to effectively remove powder, preferably, a plurality of plasma generators 202 are provided and evenly arranged in the housing 201 .

[0059] In one embodiment, a plurality of plasma generators 202 are evenly arranged around the axis of the housing 201 on one side close to the side wall of the housing 201. During the flow of the exhaust gas, powder will be evaporated onto the pipe wall close to the vacuum pipe body 1. Placing the plasma generator 202 close to the side wall of the housing 201 can improve the powder removal effect. The axes of the plurality of plasma generators 202 are parallel.

[0060] In another embodiment, a plasma generator 202 is also disposed at the center of the housing 201 .

[0061] The plasma processing module 2 is provided with an air inlet pipeline 2025 for introducing a working gas for generating plasma. Exemplarily, the working gas is oxygen.

[0062] The air intake pipeline 2025 includes an air intake main pipeline and an air intake branch 2026; the number of the air intake branch 2026 is the same as the number of the Al substrate 2021. The air intake pipeline 2025 is arranged above the Al substrate 2021 (i.e., the direction in which the tail gas enters the Al substrate 2021 along the vacuum pipe body 1), and each Al substrate 2021 is correspondingly provided with one air intake branch 2026, and the jet port of each air intake branch 2026 is arranged at the axial position of the corresponding Al substrate 2021. Preferably, the diameters of the multiple air intake branches 2026 are the same, so that the amount of working gas entering each Al substrate 2021 is the same.

[0063] The semiconductor manufacturing apparatus of the present invention further comprises a center ring 5 (center ring), which is arranged at the connection position of the two vacuum pipes and is used to maintain the vacuum state of the vacuum pipes.

[0064] A semiconductor vacuum piping body 1 cleaning method, after the process chamber 3 starts working, the plasma processing module 2 is turned on, the working gas is continuously introduced into the plasma processing module 2, and the module is kept connected to an AC power supply 2024. The plasma processing module 2 continuously generates plasma to burn the powder in the tail gas entering the plasma processing module 2, and the airflow after the powder is removed enters the subsequent vacuum piping body 1.

[0065] In the method of this embodiment, the plasma processing module 2 works continuously and starts to remove powder at the initial position. Powder will never be deposited inside the vacuum pipe body 1, and the powder can be effectively and fully removed.

[0066] In another semiconductor vacuum pipe body 1 cleaning method, the plasma processing module 2 is operated periodically.

[0067] Exemplarily, the semiconductor manufacturing equipment of the present invention further includes a blockage sensing system of the vacuum piping body 1, and the plasma processing module 2 is started or stopped according to the judgment of the blockage sensing system.

[0068] The powder is formed from the inside of the vacuum pipe body 1, and the center of the pipe hole is gradually blocked.

[0069] The blockage sensing system can determine whether the vacuum pipe body 1 is blocked by measuring the inner diameter of the vacuum pipe body 1 in real time. When the inner diameter of the vacuum pipe body 1 is not reduced to the set value, the blockage sensing system determines that it is not blocked, and the plasma processing module 2 does not start working and does not generate plasma; when the inner diameter of the vacuum pipe body 1 is reduced to the set value, the blockage sensing system determines that it is blocked, and the plasma processing module 2 starts working.

[0070] In the method of this embodiment, the powder deposited on the vacuum pipe body 1 can be removed and the waste of power and working gas can be avoided.

[0071] Example 1

[0072] like Figure 7 As shown, in this embodiment, the semiconductor manufacturing equipment includes a process chamber 3, a vacuum piping body 1, a vacuum pump, a plasma processing module 2 and a blockage sensing system; one end of the vacuum piping body 1 is connected to the process chamber 3, and the other end is connected to the vacuum pump, and the blockage sensing system is arranged in the vacuum piping body 1.

[0073] The plasma processing module 2 is arranged at the connection part of the two vacuum piping bodies 1. The diameter of the plasma processing module 2 (i.e., the diameter of the shell 201) is slightly larger than the diameter of the vacuum piping body 1. The plasma processing module 2 is fixed to the upper and lower vacuum piping bodies 1 by threaded connection or pipe joint, and a center ring 5 is also arranged between the plasma processing module 2 and the vacuum piping body 1.

[0074] Plasma processing module 2 is arranged at the connection position of two vacuum piping bodies 1, and is directly connected by threading, so as to avoid opening holes on vacuum piping body 1 for passing air inlet pipe 2025 and power connection line, thereby reducing the operation of vacuum pipe and ensuring sealing.

[0075] like Figure 4 , Figure 6 As shown, a plurality of plasma generators 202 are evenly arranged around the axis of the housing 201 on one side close to the side wall of the housing 201 .

[0076] When the semiconductor manufacturing equipment of this embodiment is used to clean the vacuum piping body 1, the plasma processing module 2 operates periodically. When the blockage sensing system determines that there is no blockage, the plasma processing module 2 does not start working and does not generate plasma; when the blockage sensing system determines that there is blockage, the plasma processing module 2 starts working.

[0077] Example 2

[0078] like Figure 8 As shown, in this embodiment, the semiconductor manufacturing equipment includes a process chamber 3, a vacuum piping body 1, a vacuum pump and a plasma processing module 2; one end of the vacuum piping body 1 is connected to the process chamber 3, and the other end is connected to the vacuum pump.

[0079] The plasma processing module 2 is disposed inside the vacuum pipe body 1. The diameter of the plasma processing module 2 (ie, the diameter of the housing 201) is the same as the inner diameter of the vacuum pipe body 1.

[0080] In order to connect the AC power supply 2024, a hole for the power connection line to pass through is provided at the corresponding position of the vacuum piping body 1; in order to allow the working gas to pass through, a hole for the air intake pipeline 2025 to pass through is provided at the corresponding position of the vacuum piping body 1. A sealing structure such as a sealing gasket or a sealing glue is provided at the position of the hole to avoid the formation of a leakage point at the position of the hole.

[0081] like Figure 3 , Figure 5 As shown, a plurality of plasma generators 202 are evenly arranged in a circle around the axis of the housing 201 on one side close to the side wall of the housing 201 , and a plasma generator 202 is also arranged at the center.

[0082] When the semiconductor manufacturing equipment of this embodiment is used to clean the vacuum piping body 1:

[0083] After the process chamber 3 starts working, the plasma processing module 2 starts working, and the working gas is continuously introduced into the plasma processing module 2, and it remains connected to the AC power supply 2024. The plasma processing module 2 continuously generates plasma to burn the powder in the exhaust gas entering the plasma processing module 2. The airflow after removing the powder enters the subsequent vacuum piping body 1.

[0084] Example 3

[0085] This embodiment provides a semiconductor manufacturing equipment, and its structure is basically the same as that of the semiconductor manufacturing equipment provided in Example 1, except that the semiconductor manufacturing equipment also includes a vacuum piping branch, and the semiconductor manufacturing equipment is not provided with a blockage sensing system, and the plasma processing module 2 is started at a fixed time to periodically clean the vacuum piping body 1.

[0086] The structure of the vacuum piping branch is the same as that of the vacuum piping body 1, and serves as a backup pipeline for the vacuum piping body 1. A first valve is provided on the vacuum piping body 1, and a second valve is provided on the vacuum piping branch. After the set cycle time is reached, the first valve is closed, the second valve is opened, and the tail gas is discharged from the vacuum piping branch. After the first valve is closed, the plasma processing module 2 on the vacuum pipeline is started to start cleaning the vacuum pipeline.

[0087] After the cleaning is completed, the second valve is closed, the first valve is opened, and the vacuum pipeline starts working again.

[0088] The vacuum pipe is usually formed by connecting multiple shorter vacuum pipes to form a longer vacuum pipe. In order to avoid the time and effort of vacuum pipe connection and improve the connection efficiency of vacuum pipe, in another embodiment of the present invention:

[0089] The two vacuum pipes are connected by a pipeline connection assembly, such as Fig. 9As shown, specifically, the two vacuum pipes are vacuum pipe A and vacuum pipe B, and the connecting ends of vacuum pipe A and vacuum pipe B are respectively provided with a first flange and a second flange.

[0090] The pipeline connection assembly includes: a first sealing centering 6, a second sealing centering 8, a rotating disk 10 and a sealing ring 11. The first sealing centering 6 and the second sealing centering 8 are both annular and are respectively located on both sides of the rotating disk 10. A through hole is opened in the middle of the rotating disk 10, and the sealing ring 11 is installed in the through hole. It should be noted that in the embodiment of the present invention, the pipe clamp is pre-configured and does not need to be assembled during installation.

[0091] The first locking groove 601 is arranged on the inner side of the first sealing centering 6, the second locking groove 701 is arranged on the outer wall of the first flange 7, the third locking groove 801 is arranged on the inner side of the second sealing centering 8, and the fourth locking groove 901 is arranged on the outer wall of the second flange 9. The first protrusion 602 is arranged on the inner side of the first sealing centering 6, the second protrusion 702 is arranged on the outer wall of the first flange 7, the third protrusion 802 is arranged on the inner side of the second sealing centering 8, and the fourth protrusion 902 is arranged on the outer wall of the second flange 9. The first installation groove 13 is arranged on the installation side of the first sealing centering 6, the second installation groove 803 is arranged on the installation side of the second sealing centering 8, and the third installation groove 1001 is arranged on the circumference of the rotating disk 10. A sealing ring 11 is arranged at the center of the rotating disk 10.

[0092] During installation, the second protrusion 702 arranged on the outer wall of the first flange 7 extends into the first locking groove 601 arranged on the inner side of the first sealing centering 6, and the first protrusion 602 arranged on the inner side of the first sealing centering 6 extends into the second locking groove 701 arranged on the outer wall of the first flange 7, and then the first sealing centering 6 is rotated, so that the first protrusion 602 is screwed into the second locking groove 701, and the second protrusion 702 is screwed into the first locking groove 601, so that the first flange 7 will not move relative to the first sealing centering 6, and then the vacuum pipe B and the pipe clamp will not move relative to each other. At the same time, the part of the sealing ring 11 close to the vacuum pipe B will also enter the vacuum pipe B. The connection method of the vacuum pipe A is the same as that of the vacuum pipe B.

[0093] In order to allow the vacuum pipe A and the vacuum pipe B to be installed separately, in the embodiment of the present invention, the first seal centering 6 and the second seal centering 8 can be rotated independently. In this way, the whole process can be completed by one staff member, and rotating the first seal centering 6 and the second seal centering 8 is more labor-saving than rotating the screws on the pipe clamp in the prior art, and is easier to rotate, and even no tools are needed.

[0094] Furthermore, the shape of the end of the locking groove is designed to match the shape of the protrusion, so that the protrusion can enter the end of the locking groove. After the protrusion enters the end of the locking groove, it will be stuck in the end of the locking groove. For example, the protrusion is an elastic material, the protrusion can be squeezed into the end of the locking groove and have an interference fit with the end of the locking groove. Or the end of the locking groove is L-shaped, so that the protrusion is not easy to slide out of the end of the locking groove.

[0095] Although a locking structure is provided, the end of the locking groove is inside each component after all, so it is not easy to observe whether the protrusion and the locking groove are tightly combined. In order to solve the above problem, in an embodiment of the present invention, a prompt message is provided on the second protrusion 702, and the prompt message is used to indicate that the first flange 7 and the first sealing centering 6 are tightly combined. A prompt message is also provided on the fourth protrusion 902, and the prompt message is used to indicate that the second flange 9 and the second sealing centering 8 are tightly combined. The first locking groove 601 and the third locking groove 801 are provided with display holes, and the display holes are used to display the prompt message. The display holes are provided in the first locking groove 601 and the third locking groove 801 because the first sealing centering 6 and the second sealing centering 8 respectively wrap the outside of the first flange 7 and the second flange 9, so if you want to see the situation inside the component through the display hole, you can only see the first locking groove 601 provided on the first sealing centering 6 and the third locking groove 801 provided on the second sealing centering 8. The prompt message can be a combination of one or more of color, graphics, text or characters. For example, the prompt message can be red, or text and patterns expressing locks. The display hole is arranged at a position corresponding to the end of the positioning slot.

[0096] The plasma processing module can also be fixed on the inner wall surface of the pipeline connection assembly.

[0097] In the above description, the technical details of the patterning and etching of each layer are not described in detail. However, those skilled in the art should understand that various technical means can be used to form layers, regions, etc. of desired shapes. In addition, in order to form the same structure, those skilled in the art can also design methods that are not completely the same as the methods described above. In addition, although the various embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage.

[0098] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by any technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A semiconductor vacuum pipe, characterized in that: It includes a vacuum piping body and a plasma processing module; One end of the vacuum pipe body is connected to the process chamber, and the other end is connected to the vacuum pump; The plasma processing module is fixedly arranged in the gas channel of the vacuum pipe body, and is used to generate plasma to burn and remove the powder or tail gas in the gas channel of the vacuum pipe body; The vacuum pipe body comprises a first vacuum pipe and a second vacuum pipe; one end of the first vacuum pipe is connected to the process chamber, and one end of the second vacuum pipe is connected to the vacuum pump; the first vacuum pipe and the second vacuum pipe are sealed and connected via a pipeline connection assembly; The plasma processing module comprises a shell and a plasma generator; the plasma generator comprises an Al substrate disk, the Al substrate disk is cylindrical, and the axial direction of the Al substrate disk is the same as the flow direction of the tail gas; the plasma generator is provided with a plurality of them, which are evenly arranged in the shell; the Al substrate disk is provided with an electrode for connecting to an AC power supply; the plasma generator is grounded; the plasma processing module is provided with an air intake pipeline for introducing a working gas for generating plasma; the air intake pipeline comprises an air intake main pipeline and an air intake branch pipeline; the number of the air intake branches is the same as the number of the Al substrate disks; A plurality of plasma generators are evenly arranged around the axis of the shell on one side close to the side wall of the shell; the axes of the plurality of plasma generators are parallel, and the plasma processing module is arranged at the connection position of the first vacuum pipe and the second vacuum pipe through a threaded connection; The semiconductor vacuum piping further includes a vacuum piping blockage sensing system.

2. The semiconductor vacuum pipe according to claim 1, wherein: The semiconductor vacuum piping further includes a vacuum piping branch.

3. A semiconductor manufacturing equipment, characterized in that: A semiconductor vacuum pipe comprising the semiconductor vacuum pipe according to any one of claims 1 to 2.

4. A vacuum piping cleaning method, using the semiconductor vacuum piping according to any one of claims 1 to 2, characterized in that: include: After the process chamber starts to work, the plasma processing module arranged in the gas channel of the vacuum pipe body is turned on; The tail gas generated in the process chamber enters the gas channel of the vacuum pipe body under the suction action of the vacuum pump; The exhaust gas is burned and decomposed under the action of plasma.

Images