A method and system for preparing fine circuits

Abstract

The present invention relates to the technical field of circuit board repair, and more specifically, to a method and system for preparing fine circuits, comprising the following steps: S10. Locate or identify the position of a circuit board circuit through a first CCD visual system; S20. Modulate the laser beam emitted by a laser processing system into an arc laser beam; S30. Focus the arc laser beam on a sacrificial layer to realize the transfer and deposition of a donor target material at the circuit position in step S10; in step S20, the following steps are performed: S21. The laser processing system processes to obtain an original light beam; S22. Select an axicon lens in a spatial light modulator, and perform light field modulation by adjusting the phase difference between the bottom and the top of the axicon lens pattern; S23. Modulate the laser beam into an arc laser beam by adjusting the position of the axicon lens pattern loaded on the spatial light modulator. The present invention can achieve higher repair efficiency and repair accuracy under a large receiving gap, and can meet the repair requirements of fine circuits or the preparation requirements of fine circuits.

Description

Technical Field

[0001] The present invention relates to the technical field of circuit board repair, and more specifically, to a method and system for preparing a fine circuit. Background Art

[0002] Printed Circuit Board (PCB) is a substrate for assembling electronic products and various electronic components. It is a printed board that forms point-to-point connections and printed components according to a predetermined design on a general substrate. PCB is widely used in communication electronics, consumer electronics, computers, automotive electronics, industrial control, medical equipment, national defense, aerospace and other fields, and is an indispensable electronic component in modern electronic information products. After electronic equipment uses printed boards, the same type of printed boards have consistency, which can reduce errors in manual wiring, and can realize automatic insertion or mounting, automatic soldering, and automatic detection of electronic components, ensuring the quality of electronic equipment, improving labor productivity, reducing costs, and facilitating maintenance. As electronic products develop towards miniaturization and digitalization, printed circuit boards are also developing towards high density, high precision, fine aperture, fine wire, fine pitch, high reliability, multi-layer, high-speed transmission, light weight, and thinness, which puts higher requirements on the preparation and repair of fine circuits.

[0003] Chinese patent CN113556934A discloses a method and device for preparing fine circuits. A CCD camera continuously takes pictures of a printed circuit board to be repaired to obtain two or more images, and the two or more images are synthesized and fused to filter out the blurred part of a single image and retain the clear part to synthesize a clear image. 3D detection can be performed on products of any shape. Based on the short-circuit defect pattern, a spatial light modulator modulates to obtain a short-circuit target shape laser beam. Based on the open-circuit defect pattern, a spatial light modulator modulates to obtain an open-circuit target shape laser beam, so as to continuously, efficiently and accurately repair circuit short circuits and circuit open circuits of any shape. Although the above scheme can realize the repair of open-circuit defects and short-circuit defects of any shape, its repair efficiency and repair accuracy cannot meet the repair of fine circuits, and the above scheme cannot be applied to the preparation of circuits under large receiving gap conditions. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies in the prior art and to provide a method and system for preparing a fine circuit. The high repair efficiency and repair accuracy can meet the repair requirements of the fine circuit and can be applied to the preparation of circuits under large receiving gap conditions.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0006] A method for preparing a fine circuit is provided, comprising the following steps:

[0007] S10. Positioning or identifying by a first CCD vision system: the position of an open defect on a circuit board or the position of a circuit;

[0008] S20. Selecting a spatial light modulator to modulate the laser beam emitted by the laser processing system into an arc-shaped laser beam; performing shaping observation in real time during the spatial light modulation process;

[0009] S30. Focusing the arc laser beam modulated in step S20 on the sacrificial layer to transfer and deposit the donor target material at the open defect position or the line position described in step S10, thereby completing the repair of the open defect or completing the preparation of the line;

[0010] In step S20, the arc laser beam is modulated according to the following steps:

[0011] S21. The laser processing system processes an original beam, and the original beam is a Gaussian beam;

[0012] S22. Selecting an axicon lens in a spatial light modulator SLM, and performing light field modulation by adjusting a phase difference between a bottom and a top of the axicon lens pattern;

[0013] S23. The laser beam is modulated into an arc-shaped laser beam by adjusting the position of the axicon lens pattern loaded on the spatial light modulator.

[0014] The method for preparing fine circuits of the present invention obtains an arc light beam by modulation through a spatial light modulator, and utilizes the arc laser beam for circuit preparation or circuit repair, which can avoid the hollowing phenomenon existing in the preparation of microcircuits by Gaussian beam laser-induced donor target film, has higher repair efficiency and repair accuracy, and can also be applicable to circuit preparation or circuit repair under the condition of large receiving gap.

[0015] Preferably, in step S22, the following steps are performed:

[0016] A grayscale image is loaded onto the SLM through software, and each grayscale value of 0-255 corresponds to a phase value; a planar correction mask, a grating, and an axicon lens form a combined phase mask, and a planar correction mask is used to compensate for the defects of the SLM; the combined phase mask is loaded onto the SLM, the laser beam is divided into a diffraction beam and a 0th-order beam, and then the diffraction beam is blocked by a physical method with the aid of the aperture behind the axicon lens, and only the first-order diffraction beam is passed; the diameter of the annular beam is adjusted by adjusting the Top level / pi rad (-100-0) in the axicon lens; the target shaped beam is obtained by moving the position where the phase image is loaded onto the liquid crystal surface.

[0017] Preferably, in step S23, the arc laser beam has an arc angle of 0πrad to 2πrad, and the arc laser beam is scanned and transferred along the direction of the arc laser beam opening or scanned in the opposite direction of the arc laser beam opening.

[0018] Preferably, in step S23, the arc of the arc laser beam is between πrad and 5 / 3πrad, and the arc laser beam is scanned along the direction of the arc laser beam opening or in the opposite direction of the arc laser beam opening. When the arc laser beam is scanned along the direction of the arc laser beam opening, a large receiving gap of 120 μm can be achieved; when the arc laser beam is scanned in the opposite direction of the arc laser beam opening, a large receiving gap of 90 μm can be achieved.

[0019] Preferably, in step S20, the laser processing system uses a nanosecond laser to emit a green Gaussian laser beam with a wavelength of 532 nm.

[0020] Preferably, the laser pulse energy is 0.5 μJ to 12 μJ, and the scanning speed is 1 mm / s to 7 mm / s.

[0021] Preferably, in step S30, the arc laser beam transfer deposition is performed 3 to 10 times.

[0022] Preferably, in step S30, the sacrificial layer is a single metal film or a composite metal film prepared on a transparent constraining layer facing the surface of the receiving substrate, and the constraining layer is connected to the second three-dimensional moving platform.

[0023] The present invention also provides a preparation system for fine circuits, comprising a computer control system, a laser processing system, a first CCD visual system, and a transfer module for transferring the repair material to the bottom of the objective lens when repairing the broken circuit:

[0024] The laser processing system comprises a laser, a fifth reflector, an attenuator, a 1 / 2 wave plate, a beam expander, a first reflector, a second reflector, a spatial light modulator, an optical path adjustment module and an objective lens which are arranged in sequence: the laser generates a laser beam, the laser beam is adjusted to a horizontal polarization state by the fifth reflector, the attenuator and the 1 / 2 wave plate, and then the laser beam is incident on the beam expander for beam expansion and collimation; the collimated laser beam is reflected by the first reflector and the second reflector in sequence and then enters the spatial light modulator for modulation to obtain a target light beam shape, the target light beam is focused, collimated and refocused by the optical path adjustment module and then used for processing by the objective lens, the laser is connected to a computer control system; wherein the spatial light modulator and the laser are connected to a controller, the angle between the incident light and the reflected light entering the spatial light modulator is less than 15 degrees; the spatial light modulator is connected to a computer control system, and the target laser beam is an arc-shaped laser beam;

[0025] The first CCD vision system includes a first CCD camera and a first polarization beam splitter prism. The reflected light from the surface of the workpiece reaches the first CCD camera through the objective lens and the second polarization beam splitter prism and is reflected by the first polarization beam splitter prism to form an image. The first CCD camera is connected to a computer control system.

[0026] It also includes a second CCD vision system for observing the receiving gap and a beam analyzer for shaping observation. The second CCD vision system includes a second CCD camera and an illumination light source. The second CCD camera and the illumination light source are both installed on the first three-dimensional mobile platform.

[0027] The preparation system for fine circuits of the present invention obtains an arc light beam through modulation by a spatial light modulator, and utilizes the arc laser beam for circuit preparation or circuit repair, which can avoid the hollowing phenomenon existing in the preparation of microcircuits by Gaussian beam laser-induced donor target film, has high repair efficiency and repair accuracy, and can also be applicable to circuit preparation or circuit repair under the condition of large receiving gap.

[0028] Preferably, the optical path adjustment module includes a third reflector, a first lens, a fourth reflector, a second lens, and a second polarization beam splitter prism arranged in sequence. The target light beam is reflected to the first lens by the third reflector. After the first lens converges and focuses the laser beam, the converged laser beam enters the second lens through the fourth reflector, and the converged laser beam is collimated again. The collimated laser beam is incident on the second polarization beam splitter prism in the form of a parallel laser beam. The second polarization beam splitter prism reflects the laser beam of a specific wavelength to the objective lens, which is focused again by the objective lens for processing. A beam analyzer and an aperture are provided between the fourth reflector and the second lens. Shaping observation is performed through the beam analyzer, which facilitates modulation to obtain the target shaped beam.

[0029] Preferably, the transfer module includes a second three-dimensional mobile platform and a third three-dimensional mobile platform, the transparent constraint layer structure is installed on the second three-dimensional mobile platform so as to move the target material layer structure located at the bottom of the transparent constraint layer to the focal position, the receiving substrate is installed on the third three-dimensional mobile platform, and the first three-dimensional mobile platform, the second three-dimensional mobile platform, and the third three-dimensional mobile platform are all connected to a computer control system.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] The method and system for preparing fine circuits of the present invention obtain an arc light beam through modulation by a spatial light modulator, and utilize the arc laser beam for circuit preparation or circuit repair, which can avoid the hollowing phenomenon existing in the preparation of microcircuits by Gaussian beam laser-induced donor target film, has high repair efficiency and repair accuracy, and can also be applicable to circuit preparation or circuit repair under the condition of large receiving gap. The large receiving gap is more conducive to the preparation of microcircuits or open circuit repair of defective circuits in practical applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A flow chart of a method for preparing fine circuits;

[0033] Figure 2 Steps for obtaining arc beams by combined phase mask modulation: (a) combination method of annular beam phase diagram; (b) Gaussian beam energy distribution; (c) annular beam energy distribution; (d) arc beam energy distribution;

[0034] Figure 3 The result of arc beam transfer deposition at a scanning speed of 3 mm / s and πrad; the 3D profile of the microcircuit after multiple depositions under different scanning directions: along the arc beam opening direction (V), along the arc beam opening opposite direction (V1);

[0035] Figure 4 SEM images of microcircuits prepared by arc beam LIFT deposition at different receiving gaps: (a) receiving gap is 15 μm; (b) receiving gap is 30 μm; (c) receiving gap is 45 μm; (d) receiving gap is 60 μm; (e) receiving gap is 75 μm; (f) receiving gap is 90 μm; (g) receiving gap is 105 μm; (h) receiving gap is 120 μm; (i) receiving gap is 135 μm;

[0036] Figure 5 The results of arc beam transfer deposition at different scanning speeds and different curvatures when the laser pulse energy is 8μJ; the arrow direction in the figure is the scanning direction along the arc beam: along the arc beam opening direction (V), along the arc beam opening opposite direction (V1); (ac) 5π / 3rad, 2-4mm / s; (df) 2 / 3πrad, 4-7mm / s; (gj) 1 / 3πrad, 5-8mm / s;

[0037] Figure 6 The results of arc beam transfer deposition at different scanning speeds and different curvatures when the laser pulse energy is 12μJ; the arrow direction in the figure is the scanning direction along the arc beam: (ac) 5 / 3πrad, 1-6mm / s; (df) 2πrad, 3-7mm / s; (gj) 1 / 3πrad, 5-8mm / s

[0038] Figure 7 SEM images of microcircuits prepared by Gaussian beam LIFT deposition at different receiving gaps: (a) receiving gap is 15 μm; (b) receiving gap is 30 μm; (c) receiving gap is 45 μm; (d) receiving gap is 60 μm; (e) receiving gap is 75 μm; (f) receiving gap is 90 μm;

[0039] Figure 8 Results of Gaussian beam transfer deposition at different scanning speeds and pulse energies; (ac) 2-6mm / s; (a1-c1) 2-6mm / s; (a2-c2) 2-6mm / s;

[0040] Fig. 9 Schematic diagram of the LIFT process: (a1-a3) according to Figure 2 (b) Schematic diagram of the Gaussian beam LIFT process at section A; (b1-b3) are schematic diagrams of the arc beam LIFT process as shown in section B in (b1);

[0041] Fig.10 The repair effect of the microcircuit: (a) The repair morphology of the microcircuit open defect; (b) The morphology of the microcircuit after repair; (c) The 3D morphology after repair;

[0042] Fig.11 A schematic diagram of a preparation / repair system for fine circuits;

[0043] In the attached drawings: 1. computer control system; 2. laser processing system; 21. laser; 22. fifth reflector; 23. attenuator; 24. 1 / 2 wave plate; 25. beam expander; 26. first reflector; 27. second reflector; 28. spatial light modulator; 29. ​​optical path adjustment module; 291. third reflector; 292. first lens; 293. fourth reflector; 294. second lens; 295. second polarization beam splitter; 210. objective lens; 3. first CCD vision system; 31. first CCD camera; 32. first polarization beam splitter; 4. transfer module; 41. second three-dimensional mobile platform; 42. third three-dimensional mobile platform; 43. transparent constraint layer structure; 44. target layer structure; 45. receiving substrate; 5. second CCD vision system; 51. second CCD camera; 52. illumination light source; 53. first three-dimensional mobile platform; 6. beam analyzer; 7. aperture. DETAILED DESCRIPTION

[0044] The present invention will be further described below in conjunction with specific implementation modes.

[0045] Embodiment 1

[0046] like Figure 1 The figure shows an embodiment of the method for preparing a fine circuit of the present invention. This embodiment is specifically a method for preparing a fine circuit, which includes the following steps:

[0047] S10. Positioning or identifying by a first CCD vision system: the position of the circuit on the circuit board;

[0048] S20. Selecting a spatial light modulator to modulate the laser beam emitted by the laser processing system into an arc-shaped laser beam; performing shaping observation in real time during the spatial light modulation process;

[0049] S30. Focusing the arc laser beam modulated in step S20 on the sacrificial layer to transfer and deposit the donor target material at the position of the line in step S10, thereby completing the preparation of the fine line;

[0050] In step S20, the arc laser beam is modulated according to the following steps:

[0051] S21. The laser processing system processes an original beam, and the original beam is a Gaussian beam;

[0052] S22. Selecting an axicon lens in a spatial light modulator SLM, and performing light field modulation by adjusting a phase difference between a bottom and a top of the axicon lens pattern;

[0053] S23. The laser beam is modulated into an arc-shaped laser beam by adjusting the position of the axicon lens pattern loaded on the spatial light modulator.

[0054] In step S22, the grayscale image is loaded onto the SLM through software, and each grayscale value of 0-255 corresponds to a phase value. The corresponding LUT is different for different wavelengths, for example, 210 at a wavelength of 532nm is equivalent to 2π. This embodiment uses a planar correction mask to compensate for the defects of the SLM, and uses a beam analyzer to test the beam profile before laser beam shaping, which is a Gaussian distribution, such as Figure 2 (b) As shown. The combined phase mask is loaded into the SLM to split the laser beam into a diffracted beam and a 0th-order beam. Then, the diffracted beam is blocked by a physical method with the aid of the aperture behind the lens 1, and only the first-order diffracted beam is passed. The shaping observation is performed by a beam analyzer, and the annular beam distribution is shown as follows: Figure 2 As shown in (c), the laser beam is an arc beam with an angle of 2π. The diameter of the annular beam is adjusted by adjusting the Top level / pi rad (-100-0) in the Axicon Lens. The target shaped beam is obtained by moving the position where the phase image is loaded onto the liquid crystal surface (X shift or Y shift, modulating the opening direction of the arc beam as needed); when the Top level is -30 and the X shift is 30, the energy distribution of the arc beam loaded into the SLM is as follows: Figure 2 (d) as shown.

[0055] In step S23, the arc laser beam has a radian of 0πrad to 2πrad, and the arc laser beam is scanned and transferred along the direction of the arc laser beam opening or scanned in the opposite direction of the arc laser beam opening. In this embodiment, the arc laser beam has a radian of πrad, and the 3D morphology of the fine line deposited by scanning along the arc opening direction and scanning and transferring along the opposite direction of the arc laser beam opening is as follows: Figure 3 As shown. Figure 3 It can be seen that when an arc laser beam is used for circuit preparation, the circuit prepared along the arc opening direction is convexly distributed, and the circuit prepared by scanning in the opposite direction of the arc beam opening is evenly distributed.

[0056] In step S20, the laser beam emitted by the laser processing system is a green Gaussian laser beam with a laser pulse width of 1.8 ns and a wavelength of 532 nm. In this embodiment, the laser pulse energy is 1.79 μJ, the scanning speed is 3 mm / s, and the number of arc laser beam transfer deposition is 10 times.

[0057] In step S30, the sacrificial layer is a single metal film or a composite metal film prepared on the transparent constraint layer facing the surface of the receiving substrate, and the constraint layer is connected to the second three-dimensional mobile platform. In the present invention, the receiving substrate can be made of any material, such as a flexible substrate such as polyimide, PDMS, or a solid substrate such as glass, fiberglass board, ceramic, semiconductor material, etc.

[0058] Embodiment 2

[0059] This embodiment is similar to the first embodiment, except that in this embodiment, the arc laser beam is scanned along the arc beam opening direction. This embodiment observes the SEM images of the microcircuit prepared by arc beam LIFT deposition at different receiving gaps of 15μm, 30μm, 45μm, 60μm, 75μm, 90μm, 105μm, 120μm, and 135μm, as shown in FIG. Figure 4 As shown in (a) to (i), it can be seen from the figure that the maximum receiving gap in this embodiment is 120 μm. The receiving gap refers to the distance between the donor film on the constraining layer and the receiving substrate. Fig.11 The h in here refers to the receiving gap.

[0060] Embodiment 3

[0061] This embodiment is similar to the first embodiment, except that in this embodiment, when the laser pulse energy is 8 μJ, different arc beams of different arcs and different scanning directions are used for transfer deposition to prepare fine microcircuits at different scanning speeds. The SEM images of the prepared microcircuits are as follows: Figure 5 shown.

[0062] Embodiment 4

[0063] This embodiment is similar to the second embodiment, except that, in this embodiment, when the laser pulse energy is 12 μJ, different arc beams of different arcs and different scanning directions are used for transfer deposition to prepare fine microcircuits at different scanning speeds. The SEM images of the prepared microcircuits are as follows: Figure 6 shown.

[0064] Embodiment 5

[0065] This embodiment is similar to the first embodiment, except that, in this embodiment, the laser pulse energy is 0.6 to 3 μJ, the scanning speed is 2 to 6 mm / s, the curvature of the arc laser beam is π / 3 to 5 / 3π, and the scanning is performed along the opening direction of the arc beam. The applicable receiving gap is 0 to 120 μm, as shown in Table 1.

[0066] Embodiment 6

[0067] This embodiment is similar to the fourth embodiment, except that, in this embodiment, the laser pulse energy is 0.6 to 3 μJ, the scanning speed is 2 to 6 mm / s, the curvature of the arc laser beam is π / 3 to 5 / 3π, and the arc laser beam is scanned in the opposite direction of the arc beam opening. The applicable receiving gap is 0 to 90 μm, see Table 1.

[0068] Comparative Example 1

[0069] This comparative example is similar to Example 1, except that this comparative example uses Gaussian beam LIFT deposition to prepare microcircuits. In this comparative example, the laser pulse energy is 1.79 μJ, the scanning speed is 3 mm / s, and the number of transfer depositions is 3 times. This comparative example shows SEM images of microcircuits prepared by Gaussian beam LIFT deposition at different receiving gaps of 15 μm, 30 μm, 45 μm, 60 μm, 75 μm, and 90 μm, as shown in FIG. Figure 7 shown.

[0070] Comparative Example 2

[0071] This comparative example is similar to Example 1, except that Gaussian beam LIFT deposition is used to prepare the microcircuit. In this comparative example, the laser pulse energy is 1.4 to 2.1 μJ, the laser scanning speed is 2 to 4 mm / s, and the applicable receiving gap is 0 to 60 μm, see Table 1.

[0072] Comparative Example 3

[0073] This comparative example is similar to Example 1, except that in this comparative example, the laser beam is a Gaussian laser beam, the laser pulse energy is 4 to 12 μJ, the laser scanning speed is 2 to 6 mm / s, and the LIFT deposition is used to prepare the microcircuit morphology. Figure 8 shown.

[0074] Table 1 Applicable receiving gaps for laser beams with different parameters

[0075]

[0076] By comparing Example 1, Example 3, and Example 4 with Comparative Example 1 and Comparative Example 3, it is found that under different receiving gap conditions, the circuit processed by the Gaussian beam presents a hollow or low-in-the-middle-and-high-at-the-edge morphology (similar to a concave shape), and the microscopic morphology is not uniformly distributed. When an arc laser beam is used for circuit preparation, the circuit morphology is better than that of a circular laser beam, and the density and uniformity of the microcircuit are better.

[0077] Under different receiving gap conditions, the circuit processed by Gaussian beam presents a hollow or low-in-the-middle-and-high-at-the-edge morphology (similar to a concave shape), and the microscopic morphology is not uniformly distributed. When an arc laser beam is used for circuit preparation, the circuit prepared along the arc opening direction is convexly distributed, and the circuit prepared by scanning in the opposite direction of the arc beam opening is uniformly distributed. Regardless of the scanning direction, the density and uniformity of the microcircuit are better.

[0078] By comparing Example 2, Example 5, and Example 6 with Comparative Example 1, it can be seen that no matter whether the arc beam is scanned along the direction of the arc beam opening or in the opposite direction of the arc beam opening, the applicable receiving gap is larger than that of the Gaussian beam. Among them, when scanning along the direction of the arc beam opening, the applicable receiving gap is larger. The theoretical explanation is as follows:

[0079] The peak intensity of the Gaussian beam coincides with the center of the donor film. Fig. 9 (a2-a3) As shown. The pulsed laser is focused on the metal target film (tens to hundreds of nanometers, usually called "donor") through the transparent substrate material. Under the action of the pulsed laser, the donor film undergoes a phase change to form a "molten pool" ( Fig. 9 (a2)), and a small part of the molten metal vaporizes to form cavitation bubbles ( Fig. 9 (a3). The cavitation bubble expands rapidly under the action of the vapor pressure, pushing the molten target forward and depositing on the receiving substrate. That is, the deposited molten target moves outward along the axis under the action of the driving force.

[0080] The schematic diagram of the arc beam LIFT process is shown in the figure. In this method, the arc beam opening is scanned in the reverse direction ( Fig. 9 (b1)), Fig. 9 (b2-b3) is a schematic diagram of the cross section B when the arc beam acts on the donor film. The donor film is subjected to the arc beam to form a Fig. 9In the “molten pool” shown in (b2), the molten target continues to be affected by the arc beam. According to the energy distribution of the arc beam, a Gaussian-like arc cavitation bubble is formed between the transparent substrate and the donor film, as shown in Fig. 9 (b3) shows that the arc-shaped bubbles with Gaussian distribution generate a driving force toward the central axis, and the direction of the driving force is consistent with the lateral flow of the cavitation bubbles on both sides of the central axis. As the arc-shaped cavitation bubbles with Gaussian distribution expand rapidly, the molten target is pushed forward to be deposited on the receiving substrate.

[0081] Embodiment 7

[0082] This embodiment is the same as the first embodiment, except that the method in this embodiment is a method for repairing a defective circuit, and includes the following steps:

[0083] S10. Locate or identify the open defect position through the first CCD vision system;

[0084] S20. Select a spatial light modulator to modulate the laser beam emitted by the laser processing system into an arc-shaped laser beam; perform shaping observation in real time during the spatial light modulation process; wherein the radian of the arc-shaped laser beam is πrad, and the receiving gap is 50μm.

[0085] S30. The arc laser beam modulated in step S20 is focused on the sacrificial layer to transfer and deposit the donor target material at the open circuit defect position described in step S10, and the open circuit defect circuit is repaired. The circuit morphology before and after the repair is as follows: Fig.10 As shown in (a) to 10(c), the arc laser beam can be used to accurately repair the defective circuit and has a good repair effect.

[0086] Embodiment 8

[0087] like Fig.11 The embodiment of the preparation system for fine circuits is shown, including a computer control system 1, a laser processing system 2, a first CCD vision system 3, and a transfer module 4 for transferring the repair material to the bottom of the objective lens 210 when repairing the broken circuit:

[0088] The laser processing system 2 includes a laser 21, a fifth reflector 22, an attenuator 23, a 1 / 2 wave plate 24, a beam expander 25, a first reflector 26, a second reflector 27, a spatial light modulator 28, an optical path adjustment module 29 and an objective lens 210 which are arranged in sequence: the laser 21 generates a laser beam, which is adjusted to a horizontal polarization state by the fifth reflector 22, the attenuator 23 and the 1 / 2 wave plate 24, and then the laser beam is incident on the beam expander 25 for beam expansion and collimation; the collimated laser beam is sequentially passed through the first reflector 26, the second reflector 27, the spatial light modulator 28, the optical path adjustment module 29 and the objective lens 210. After being reflected by the reflector 26 and the second reflector 27, the light enters the spatial light modulator 28 for modulation to obtain the target light beam shape. The target light beam is focused, collimated, and refocused by the optical path adjustment module 29 and then used for processing by the objective lens 210. The laser 21 is connected to the computer control system 1; wherein the spatial light modulator 28 and the laser 21 are connected to the controller, and the angle between the incident light and the reflected light entering the spatial light modulator 28 is less than 15 degrees; the spatial light modulator 28 is connected to the computer control system 1, and the target laser beam is an arc-shaped laser beam;

[0089] The first CCD vision system 3 includes a first CCD camera 31 and a first polarization beam splitter prism 32. The reflected light from the surface of the workpiece reaches the first CCD camera 31 through the objective lens 210 and the second polarization beam splitter prism 295 and is reflected by the first polarization beam splitter prism 32 to form an image. The first CCD camera 31 is connected to the computer control system 1.

[0090] It also includes a second CCD vision system 5 for observing the receiving gap and a beam analyzer 6 for shaping observation. The second CCD vision system 5 includes a second CCD camera 51 and an illumination light source 52. The second CCD camera 51 and the illumination light source 52 are both installed on a first three-dimensional moving platform 53.

[0091] Among them, the optical path adjustment module 29 includes a third reflector 291, a first lens 292, a fourth reflector 293, a second lens 294, and a second polarization beam splitter prism 295 which are arranged in sequence. The target light beam is reflected to the first lens 292 by the third reflector 291. After the first lens 292 gathers and focuses the laser beam, the gathered laser beam enters the second lens 294 through the fourth reflector 293, and the gathered laser beam is collimated again. The collimated laser beam is incident on the second polarization beam splitter prism 295 in the form of a parallel laser beam. The second polarization beam splitter prism 295 reflects the laser beam of a specific wavelength to the objective lens 210, and is used for processing after being focused again by the objective lens 210. A beam analyzer 6 and an aperture 7 are provided between the fourth reflector 293 and the second lens 294.

[0092] The transfer module 4 includes a second three-dimensional mobile platform 41 and a third three-dimensional mobile platform 42. The transparent constrained layer structure 43 is installed on the second three-dimensional mobile platform 41 so as to move the target layer structure 44 located at the bottom of the transparent constrained layer to the focal position. The receiving substrate 45 is installed on the third three-dimensional mobile platform 42. The first three-dimensional mobile platform 53, the second three-dimensional mobile platform 41, and the third three-dimensional mobile platform 42 are all connected to the computer control system 1. The receiving substrate can be made of any material, such as flexible substrates such as polyimide and PDMS; or solid substrates such as glass, glass fiber board, ceramics, and semiconductor materials.

[0093] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A method for preparing a fine circuit, characterized in that: The following steps are involved: S10. Positioning or identifying the position of the circuit board circuit by the first CCD vision system; S20. Selecting a spatial light modulator to modulate the laser beam emitted by the laser processing system into an arc-shaped laser beam; performing shaping observation in real time during the spatial light modulation process; S30. Focusing the arc laser beam modulated in step S20 on the sacrificial layer to transfer and deposit the donor target material at the position of the circuit in step S10, thereby completing the preparation of the circuit; In step S20, the arc laser beam is modulated according to the following steps: S21. The laser processing system processes an original beam, and the original beam is a Gaussian beam; S22. Selecting an axicon lens in a spatial light modulator SLM, and performing light field modulation by adjusting a phase difference between a bottom and a top of the axicon lens pattern; S23. By adjusting the position of the axicon lens pattern loaded on the spatial light modulator, the laser beam is modulated into an arc-shaped laser beam; In step S23, the arc angle of the arc laser beam is between πrad and 5 / 3πrad, and the arc laser beam is scanned along the direction of the arc laser beam opening or in the opposite direction of the arc laser beam opening.

2. The method for preparing a fine circuit according to claim 1, characterized in that: In step S22, the following steps are performed: A grayscale image is loaded onto the SLM through software, and each grayscale value of 0-255 corresponds to a phase value; a planar correction mask, a grating, and an axicon lens form a combined phase mask; a planar correction mask is used to compensate for the defects of the SLM, and the combined phase mask is loaded onto the SLM to divide the laser beam into a diffracted beam and a 0th-order beam, and then the diffracted beam is blocked by a physical method with the aid of the aperture behind the axicon lens, and only the first-order diffracted beam is passed; the diameter of the annular beam is adjusted by adjusting the Toplevel / pi rad (-100-0) in the axicon lens; and the target shaped beam is obtained by moving the position where the phase image is loaded onto the liquid crystal surface.

3. The method for preparing fine circuits according to claim 1, characterized in that: In step S20, the laser processing system uses a nanosecond laser to emit a green Gaussian laser beam with a wavelength of 532 nm.

4. The method for preparing fine circuits according to claim 3, characterized in that: The laser pulse energy is 0.5 μJ to 12 μJ, the scanning speed is 1 mm / s to 7 mm / s, and the number of arc laser beam transfer deposition is 3 to 10 times.

5. The method for preparing fine circuits according to claim 1, characterized in that: In step S30, the sacrificial layer is a single metal film or a composite metal film prepared on a transparent constraining layer facing the surface of the receiving substrate, and the constraining layer is connected to the second three-dimensional moving platform.

6. A preparation system for implementing the preparation method of fine circuits according to any one of claims 1 to 5, characterized in that: The invention comprises a computer control system (1), a laser processing system (2), a first CCD visual system (3), and a transfer module (4) for transferring the repair material to the bottom of the objective lens (210) when repairing the broken circuit: The laser processing system (2) comprises a laser (21), a fifth reflector (22), an attenuator (23), a half-wave plate (24), a beam expander (25), a first reflector (26), a second reflector (27), a spatial light modulator (28), an optical path adjustment module (29) and an objective lens (210) which are arranged in sequence: the laser (21) generates a laser beam, the laser beam is adjusted to a horizontal polarization state by the fifth reflector (22), the attenuator (23) and the half-wave plate (24), and then the laser beam is incident on the beam expander (25) for beam expansion and collimation; the collimated laser beam is sequentially passed through the first reflector (26) and the second reflector (27) After being reflected by the reflector (27), the light enters the spatial light modulator (28) for modulation to obtain a target light beam shape. The target light beam is focused, collimated, and refocused by the optical path adjustment module (29) and then passed through the objective lens (210) for processing. The laser (21) is connected to a computer control system (1); wherein the spatial light modulator (28) and the laser (21) are connected to a controller, and the angle between the incident light entering the spatial light modulator (28) and the reflected light is less than 15 degrees; the spatial light modulator (28) is connected to the computer control system (1), and the target light beam shape is an arc, and the arc of the arc laser beam is between πrad and 5 / 3πrad; The first CCD vision system (3) comprises a first CCD camera (31) and a first polarization beam splitter prism (32); the reflected light from the surface of the workpiece reaches the first CCD camera (31) via the objective lens (210) and the second polarization beam splitter prism (295) and is reflected by the first polarization beam splitter prism (32) to form an image; the first CCD camera (31) is connected to a computer control system (1); It also includes a second CCD visual system (5) for observing the receiving gap and a beam analyzer (6) for shaping observation. The second CCD visual system (5) includes a second CCD camera (51) and an illumination light source (52). The second CCD camera (51) and the illumination light source (52) are both installed on the first three-dimensional moving platform (53).

7. The preparation system according to claim 6, characterized in that: The optical path adjustment module (29) comprises a third reflector (291), a first lens (292), a fourth reflector (293), a second lens (294), and a second polarization beam splitter prism (295) which are arranged in sequence. The target light beam is reflected to the first lens (292) by the third reflector (291). After the first lens (292) gathers and focuses the laser beam, the gathered laser beam enters the second lens (294) through the fourth reflector (293). The gathered laser beam is collimated again. The collimated laser beam is incident on the second polarization beam splitter prism (295) in the form of a parallel laser beam. The second polarization beam splitter prism (295) reflects a laser beam of a specific wavelength to an objective lens (210). After being focused again by the objective lens (210), the laser beam is used for processing. A beam analyzer (6) and an aperture (7) are provided between the fourth reflector (293) and the second lens (294).

8. The preparation system according to claim 6, characterized in that: The transfer module (4) comprises a second three-dimensional mobile platform (41) and a third three-dimensional mobile platform (42); a transparent constraining layer structure (43) is mounted on the second three-dimensional mobile platform (41) so as to move a target layer structure (44) located at the bottom of the transparent constraining layer to a focal position; a receiving substrate (45) is mounted on the third three-dimensional mobile platform (42); and the first three-dimensional mobile platform (53), the second three-dimensional mobile platform (41), and the third three-dimensional mobile platform (42) are all connected to a computer control system (1).

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