A multi-branch power distribution circuit

Abstract

The present invention discloses a multi-branch power distribution circuit, including an input matching circuit, a signal amplifying circuit, a bias circuit and a power dividing circuit, wherein the input matching circuit is connected to the signal amplifying circuit, the bias circuit provides a bias voltage for the signal amplifying circuit, the signal amplifying circuit transmits the signal to the power dividing circuit, and the power dividing circuit is provided with no less than two transistors, and the transistors are connected to the output end. The present invention provides a bias voltage for the signal amplifying circuit through the bias circuit, and adopts transistors in the power dividing circuit to realize multi-path power division, without too many inductance components, thereby reducing costs; the present invention has a simple circuit structure, and the power dividing channels can be flexibly distributed.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, in particular to a multi-branch power distribution circuit. Background Art

[0002] Power dividers (power splitters) are widely used and important in the field of radio frequency microwaves. For example, they are currently widely used in GPS multi-channel receivers. In order to achieve the fastest positioning, GPS receivers need to be able to receive multiple satellite signals at the same time and continuously track multiple satellites. In order to realize this multi-channel receiving system, there are currently two solutions. The first solution is to use multiple antennas to receive signals in frequency bands, and the second solution is to use a broadband antenna to receive signals and then distribute power. Under the current development trend of receiver systems towards miniaturization and low power consumption, multi-channel receivers are basically implemented using Solution 2. However, Solution 2 also has a disadvantage at this stage: a large number of power dividers must be reused for switching between ports, so the power divider will become one of the bottlenecks of miniaturization. Therefore, how to provide a power divider circuit with a simple circuit and flexible configuration of power divider channels is an urgent problem to be solved at this stage. Summary of the invention

[0003] The purpose of the present invention is to at least solve the technical problem that the power divider distribution path is fixed and the volume is large in the prior art. To this end, the present invention proposes a multi-branch power distribution circuit.

[0004] The technical solution provided by the present invention includes an input matching circuit, a signal amplifying circuit, a bias circuit and a power dividing circuit. The input matching circuit is connected to the signal amplifying circuit. The bias circuit provides a bias voltage for the signal amplifying circuit. The signal amplifying circuit transmits the signal to the power dividing circuit. The power dividing circuit is provided with no less than two transistors, and the transistors are connected to the output end of the power distribution circuit.

[0005] Furthermore, the input matching circuit includes a capacitor C6, an inductor L3, a capacitor C5 and a resistor R9, the capacitor C6 and the inductor L3 are connected in series, the capacitor C5 and the resistor R9 are connected in series, and the inductor L3 is connected to the capacitor C5.

[0006] Furthermore, the signal amplifying circuit includes a transistor M1 and an inductor L2 , and the inductor L2 is connected to the transistor M1 .

[0007] Furthermore, the power division circuit includes a transistor M1 - 1 , a transistor M1 - 2 and a capacitor. The drains of the transistor M1 - 1 and the transistor M1 - 2 are connected to the capacitors respectively. The power of the transistor M1 - 1 and the transistor M1 - 2 are the same.

[0008] Furthermore, the power division circuit includes a transistor M1-1, a transistor M1-2 and a capacitor, the drains of the transistor M1-1 and the transistor M1-2 are respectively connected to the capacitor, and the power of the transistor M1-1 and the transistor M1-2 are different.

[0009] Furthermore, the power division circuit further includes a resistor R1 - 1 and a resistor R1 - 2 , and the resistor R1 - 1 and the resistor R1 - 2 are connected to the transistor M1 - 1 and the transistor M1 - 2 , respectively.

[0010] Furthermore, the bias circuit includes a first bias circuit and a second bias circuit, the first bias circuit is used to provide a bias voltage for the transistor M1, and the second bias circuit is used to provide a bias voltage for the transistor M1-1 and the transistor M1-2.

[0011] Further, the first bias circuit includes a transistor M3, a drain of the transistor M3 is connected to a gate of the transistor M3, and a source of the transistor M3 is grounded.

[0012] Furthermore, the first bias circuit further includes a resistor R10, a resistor R11, a capacitor C7 and an inductor L4, one end of the capacitor C7 is connected to the resistor R11, the resistor R10 and the inductor L4, and the other end of the capacitor C7 is grounded.

[0013] Further, the second bias circuit includes a diode D1, a diode D2, a diode D3, a transistor M4, a transistor M5 and a capacitor C8, the diode D1, the diode D2, the transistor M5, the transistor M4 and the diode D3 are connected in series, the diode D1 is connected to an external voltage, the diode D3 is grounded, and the capacitor C8 is connected in series with the diode D2, the diode D1 and the transistor M5.

[0014] The beneficial effects of the present invention are as follows: the present invention discloses a multi-branch power distribution circuit, including an input matching circuit, a signal amplifying circuit, a bias circuit and a power dividing circuit, wherein the input matching circuit is connected to the signal amplifying circuit, the bias circuit provides a bias voltage for the signal amplifying circuit, the signal amplifying circuit transmits the signal to the power dividing circuit, and the power dividing circuit is provided with no less than 2 transistors, which are connected to the output end. The present invention provides a bias voltage for the signal amplifying circuit through the bias circuit, and uses transistors in the power dividing circuit to realize multi-path power division, without too many inductance components, thereby reducing costs; the present invention has a simple circuit structure, and the power dividing channels can be flexibly distributed. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 is a circuit schematic diagram of the present invention;

[0017] Figure 2 is a circuit diagram of the present invention;

[0018] In the figure:

[0019] 100. Input matching circuit; 101. First bias circuit; 102. Second bias circuit; 103. Signal amplification circuit; 104. Power division circuit. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described through implementation methods with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Reference Figure 1 The preferred embodiment of the present invention discloses a multi-branch power distribution circuit, including an input matching circuit 100, a signal amplifying circuit 103, a bias circuit and a power dividing circuit 104. The input matching circuit 100 is connected to the signal amplifying circuit 103. The bias circuit provides a bias voltage for the signal amplifying circuit 103. The signal amplifying circuit 103 transmits the signal to the power dividing circuit 104. The power dividing circuit 104 is provided with no less than two transistors, and the transistors are connected to the output end. The present invention provides a bias voltage for the signal amplifying circuit 103 through a bias circuit, and transistors are used in the power dividing circuit 104 to realize multi-path power division without too many inductance components, thereby reducing costs. The present invention has a simple circuit structure, and the power dividing channels can be flexibly allocated.

[0022] In some embodiments, the input matching circuit 100 is provided with an RFi n interface, and a radio frequency signal is received from a satellite antenna and enters the input matching circuit 100. The input matching circuit 100 includes a DC blocking capacitor C6, a noise and bandwidth matching device inductor L3, a capacitor C5 and a resistor R9. The capacitor C6 and the inductor L3 are connected in series, and the capacitor C5 and the resistor R9 are connected in series to form an RC feedback circuit. The inductor L3 and the capacitor C5 are connected in series to filter out out-of-band noise signals, match the impedance and noise coefficient of the radio frequency signal, suppress and filter the out-of-band signal, and improve the signal-to-noise ratio of the signal within the frequency band.

[0023] In some embodiments, the input matching circuit 100 is connected to the signal amplification circuit 103, amplifies the input signal, and transmits it to the power division circuit 104. The signal amplification circuit 103 includes a transistor M1, which is a low-noise signal amplification unit, not limited to a single-stage amplifier. The low-noise signal amplification unit can be composed of a multi-stage common source, common gate, common drain and other structures LNA (low noise amplifier). The signal amplification circuit 103 in this embodiment is a common source amplifier structure. The signal received by the antenna is amplified into a current signal after being transmitted to the gate of M1 and then drained by M1. The output signal amplification circuit 103 also includes an inductor L2, which is connected to the transistor M1.

[0024] In some embodiments, the power division circuit 104 includes transistors. The user can select the number of power division channels according to actual needs. The number of power division channels corresponds to the number of transistors. The power division circuit 104 includes transistor M1-1, transistor M1-2...transistor M1-N, capacitor C1-1, capacitor C1-2...capacitor C1-N, resistor R1-1-1, resistor R1-1-2...resistor R1-1-N. The drains of transistors M1-1, transistor M1-2...transistor M1-N are connected in series with capacitors C1-1, capacitor C1-2...capacitor C1-N respectively, and the drains of transistors M1-1, transistor M1-2...transistor M1-N are connected with resistors R1-1-1, resistors R1-1-2...resistor R1-1-N, and the other ends of resistors R1-1-1, resistors R1-1-2...resistor R1-1-N are connected to the external VCC voltage.

[0025] The gate and source of transistors M1_1, M1_2…M1_N are in parallel. If the power distribution is equal, the size and structure are the same; if the power distribution is unequal, the size of each transistor can be changed. The transistor can be equivalent to N independent common-gate amplifiers, and the M1 drain output signal is amplified in N paths. When the transistors are the same size, the current output by the M1 drain is equally divided and input into the M1_1, M1_2…M1_N transistor group, and then output through the drain. Part of the signal energy is absorbed by the R1_1, R1_2…R1_N resistor array, and part of the energy is absorbed by the signal 50Ω load. Secondly, the output standing wave can be optimized. The resistor arrays R1_1, R1_2…R1_N provide drain static bias for transistors M1_1, M1_2…M1_N. The reason for using resistor arrays is that resistors are easy to integrate in the chip. Although they absorb part of the signal energy and reduce the output power, the advantage is that they avoid the use of additional inductor feeding outside the chip, reduce the complexity of the off-chip application circuit, and save the overall system area. If there is enough chip area, the resistor arrays R1_1, R1_2…R1_N can also be replaced by inductors, which can be replaced by inductors outside or inside the chip to increase the output power. Inductors C1_1, C1_2…C1_N are connected to RFout1, RFout2,…RFoutN respectively to output the signal. There are N output channels in total. The inductors mainly play the role of blocking DC.

[0026] In some embodiments, the bias circuit is connected to the low noise amplifier to provide a bias voltage, and the bias circuit includes a first bias circuit 101 and a second bias circuit 102. The first bias circuit 101 is used to provide a bias voltage for the transistor M1, and the second bias circuit 102 is used to provide a bias voltage for the transistors M1-1, M1-2, ..., M1_N. The bias voltage here refers to the gate voltage.

[0027] In some embodiments, the first bias circuit 101 includes a transistor M3, a resistor R10, a resistor R11, a capacitor C7 and an inductor L4, the drain of the transistor M3 is connected to the gate of the transistor M3, the source of the transistor M3 is grounded, one end of the capacitor C7 is connected to the resistor R11, the resistor R10 and the inductor L4, and the other end of the capacitor C7 is grounded. The resistor R11, the resistor R10 and the transistor M3 are connected in series to form a voltage divider circuit to provide a gate voltage for the transistor M1, and the voltage after the voltage divider is taken in the resistors R10 and R11 is fed to the gate of M1 through the inductor L4. The capacitor C7 provides filtering and noise reduction effects.

[0028] In some embodiments, reference Figure 2, the second bias circuit 102 includes a diode D1, a diode D2, a diode D3, a transistor M4, a transistor M5 and a capacitor C8, wherein the diode D1, the diode D2, the transistor M5, the transistor M4 and the diode D3 are connected in series, the external VCC voltage is connected to the anode of the diode D1 for power supply, the diode D3 is grounded, the cathode of the diode D3 is grounded, one end of the capacitor C8 is connected to the reference GND, and the other end of the capacitor C8 is connected to the gate of the transistor of the power division circuit. The diode D3 is grounded, and the other end of the capacitor C8 is also connected to the drain of the transistor M4 and the source of the transistor M5. The diode D1, the diode D2, the diode D3, the transistor M4 and the transistor M5 form a voltage divider circuit, which provides a gate voltage to the transistor M1_1, the transistor M1_2...the transistor M1_N. The voltage divider voltage is connected to the drain of the transistor M4, and the capacitor C8 provides filtering and denoising effects.

[0029] The bias circuit provides a stable DC static operating point for the LNA and has a temperature compensation function, so that the overall circuit can work normally under high and low temperature conditions. The advantage of using transistor bias is that the bias transistor and the amplifier tube have the same polarity temperature coefficient, which can provide a certain temperature compensation effect on the signal amplifier circuit 103 and reduce the impact of high and low temperatures on the performance of the active power divider.

[0030] The active N-way power splitter circuit 104 of the present invention can be implemented by a variety of integrated circuit processes, including but not limited to CMOS processes, compound semiconductor processes, etc., and has strong versatility. Through the layout of the integrated circuit, the area of ​​the 4-way power distribution circuit can be controlled to 0.5mm 2 It can be formed into a single chip or integrated into a SOC chip as an IP core as a receiving front-end chip.

[0031] In the description of the present invention, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0032] In the description of the present invention, unless otherwise clearly defined, words such as "setting" should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meaning of the above words in the present invention in combination with the specific content of the technical solution.

[0033] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0034] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A multi-branch power distribution circuit, characterized in that: include: An input matching circuit, a signal amplifying circuit, a bias circuit and a power dividing circuit, wherein the input matching circuit is connected to the signal amplifying circuit, the bias circuit provides a bias voltage for the signal amplifying circuit, the signal amplifying circuit transmits a signal to the power dividing circuit, and the power dividing circuit is provided with no less than two transistors, and the transistors are connected to the output end of the power distribution circuit; The signal amplification circuit includes a transistor M1; the power division circuit includes a transistor M1-1 and a transistor M1-2; The bias circuit includes a first bias circuit and a second bias circuit, the first bias circuit is used to provide a bias voltage for the transistor M1, and the second bias circuit is used to provide a bias voltage for the transistor M1-1 and the transistor M1-2; The first bias circuit includes a transistor M3, a drain of the transistor M3 is connected to a gate of the transistor M3, and a source of the transistor M3 is grounded; The first bias circuit further includes a resistor R10, a resistor R11, a capacitor C7 and an inductor L4, one end of the capacitor C7 is connected to the resistor R11, the resistor R10 and the inductor L4, and the other end of the capacitor C7 is grounded; The second bias circuit includes a diode D1, a diode D2, a diode D3, a transistor M4, a transistor M5 and a capacitor C8. The diode D1, the diode D2, the transistor M5, the transistor M4 and the diode D3 are connected in series. The diode D1 is connected to an external voltage, the diode D3 is grounded, and the capacitor C8 is connected in series with the transistor M5, the diode D2 and the diode D1 in sequence.

2. A multi-branch power distribution circuit according to claim 1, characterized in that: The input matching circuit includes a capacitor C6, an inductor L3, a capacitor C5 and a resistor R9. The capacitor C6 and the inductor L3 are connected in series, the capacitor C5 and the resistor R9 are connected in series, and the inductor L3 is connected to the capacitor C5.

3. The multi-branch power distribution circuit according to claim 1, characterized in that: The signal amplifying circuit includes a transistor M1 and an inductor L2 , and the inductor L2 is connected to the transistor M1 .

4. The multi-branch power distribution circuit according to claim 1, characterized in that: The power division circuit includes a transistor M1-1, a transistor M1-2 and a capacitor. The drains of the transistor M1-1 and the transistor M1-2 are respectively connected to the capacitors, the sources of the transistor M1-1 and the transistor M1-2 are connected to the drain of the transistor M1, the source of the transistor M1 is connected to the inductor L2, and the power of the transistor M1-1 and the transistor M1-2 is the same.

5. The multi-branch power distribution circuit according to claim 1, characterized in that: The power division circuit includes a transistor M1-1, a transistor M1-2 and a capacitor. The drains of the transistor M1-1 and the transistor M1-2 are respectively connected to the capacitors, the sources of the transistor M1-1 and the transistor M1-2 are connected to the drain of the transistor M1, the source of the transistor M1 is connected to the inductor L2, and the power sizes of the transistor M1-1 and the transistor M1-2 are different.

6. A multi-branch power distribution circuit according to claim 4, characterized in that: The power division circuit further includes a resistor R1 - 1 and a resistor R1 - 2 , and the resistor R1 - 1 and the resistor R1 - 2 are connected to the drains of the transistor M1 - 1 and the transistor M1 - 2 , respectively.

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