Temperature compensation method, system and computer readable storage medium

Abstract

The present application provides such a method of temperature compensation, which may include: collecting multiple internal temperature values ​​when the measured element processes an input signal, and the actual RF power of the measured element corresponding to each internal temperature value; calculating the power offset of the measured element at each internal temperature value according to each internal temperature value and its corresponding actual RF power; and performing power compensation on the measured element at different temperatures based on the power offset, so that the measured element maintains the output target RF power at different temperatures. The present application provides an input signal to the measured element to increase the temperature of the measured element, and then obtains the power offset of the measured element in different temperature ranges, thereby eliminating the intervention cost of an external temperature box, and also alleviating the cumbersome process of manually adjusting the external temperature box to obtain multiple internal temperature values.

Description

Technical Field

[0001] The present application relates to the field of radio frequency circuit technology, and in particular to a temperature compensation method, system and computer-readable storage medium. Background Art

[0002] Receivers and transmitters are two carrier forms of RF circuits. Receivers are mainly used to filter, mix, demodulate, and decode received RF signals to restore the target signal. Transmitters are mainly used to modulate, transform, and power the RF signals to be transmitted, and finally transmit them through antennas. In RF circuits, the transmission power and receiving gain of each component inside are affected by the ambient temperature. Specifically, in high temperature environments, the link gain of the receiver decreases and the noise factor increases; in low temperature environments, the link gain of the receiver increases and the noise factor decreases. For example, high and low temperature environments will directly lead to a decrease in the performance of the PA (Power Amplifier) ​​of the receiver, resulting in differences in high and low temperature output power, which ultimately leads to different results for the link gain of the receiver at different ambient temperatures.

[0003] At present, most of the temperature compensation in related technologies is to control the ambient temperature of the RF circuit through an external temperature box to keep the ambient temperature at the target temperature, and then achieve power compensation by modifying the non-volatile memory. Specifically, in order to adapt to the wide temperature working environment, it is necessary to test the power value of the component in different temperature ranges to achieve the purpose of accurate temperature compensation. However, this method has high requirements on the external environment, the implementation process is relatively cumbersome, and it requires the intervention of an external temperature box, which increases the cost. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems in the related art to a certain extent. To this end, one purpose of the present application is to propose a temperature compensation method, system, electronic device and storage medium, which provides an input signal to the measured element to increase the temperature of the measured element, and then obtains the compensation coefficient of the measured element in different temperature ranges, thereby eliminating the intervention cost of an external temperature box and alleviating the tedious work process.

[0005] One aspect of the present application provides a method for temperature compensation, which may include: collecting multiple internal temperature values ​​of the measured element when processing an input signal, and the actual RF power of the measured element corresponding to each of the internal temperature values; calculating the power offset of the measured element when it is at each of the internal temperature values ​​according to the internal temperature values ​​and the actual RF power corresponding to them; and performing power compensation on the measured element at different temperatures based on the power offset, so that the measured element maintains the output target RF power at different temperatures.

[0006] In some embodiments, the calculating the power offset of the measured element when it is at each internal temperature value according to each internal temperature value and its corresponding actual RF power may include: constructing a temperature compensation curve for characterizing the correspondence between the internal temperature value and the actual RF power according to each internal temperature value and its corresponding actual RF power; determining a temperature compensation slope for each temperature interval in the temperature compensation curve, wherein the temperature interval is used to characterize the temperature range between two numerically adjacent internal temperature values; and calculating the power offset of the measured element when it is at each internal temperature value according to each temperature compensation slope and its corresponding internal temperature value.

[0007] In some embodiments, the power offset D, the temperature compensation slope M, and the normal temperature value T of the measured element at the internal temperature value 1 With the internal temperature value T 2 Can satisfy:

[0008] In some embodiments, before collecting multiple internal temperature values ​​of the measured element when processing an input signal, and the actual RF power of the measured element corresponding to each of the internal temperature values, it may include: transmitting an input signal of a preset power to the measured element multiple times, so that the measured element generates a continuous plurality of internal temperature values ​​when processing the input signal.

[0009] In some embodiments, it may also include: obtaining multiple temperature compensation values ​​corresponding to the power offset of multiple measured elements of the same type at each of the internal temperature values; and calculating the average value of the multiple temperature compensation values ​​as the final temperature compensation value corresponding to the power offset of the measured elements of the same type.

[0010] The present application also proposes such a temperature compensation system, which may include: an acquisition module, used to collect multiple internal temperature values ​​when the measured element processes an input signal, and the actual RF power of the measured element corresponding to each of the internal temperature values; a power offset calculation module, used to calculate the power offset of the measured element when it is at each of the internal temperature values ​​and the corresponding actual RF power; and a compensation module, used to perform power compensation on the measured element at different temperatures based on the power offset, so that the measured element maintains the output target RF power at different temperatures.

[0011] In some embodiments, the execution steps of the power offset calculation module may include: constructing a temperature compensation curve for characterizing the correspondence between the internal temperature value and the actual RF power according to each of the internal temperature values ​​and its corresponding actual RF power; determining the temperature compensation slope of each temperature interval in the temperature compensation curve, wherein the temperature interval is used to characterize the temperature range between two numerically adjacent internal temperature values; and calculating the power offset of the measured element when it is at each of the internal temperature values ​​according to each of the temperature compensation slopes and its corresponding internal temperature value.

[0012] In some embodiments, the power offset D, the temperature compensation slope M, and the normal temperature value T of the measured element at the internal temperature value 1 With the internal temperature value T 2 Can satisfy:

[0013] The present application also proposes an electronic device including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps in the temperature compensation method as described in any of the above embodiments are implemented.

[0014] The present application also proposes a computer-readable storage medium storing a computer program, wherein the computer program is suitable for being loaded by a processor to execute the steps in the temperature compensation method as described in any of the above embodiments.

[0015] According to the technical solution of the above-mentioned implementation mode, at least one of the following beneficial effects can be obtained.

[0016] According to a temperature compensation method, system, electronic device and computer-readable storage medium of the present application, an input signal is provided to the element under test to increase the temperature of the element under test, thereby obtaining the power offset of the element under test in different temperature ranges, thereby eliminating the intervention cost of an external temperature box and alleviating the tedious process of manually adjusting the external temperature box to obtain multiple internal temperature values. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a flow chart of a method for temperature compensation according to one aspect of the present application;

[0018] Figure 2 This is a schematic diagram of the corresponding relationship between RF power and temperature in a high-power scenario;

[0019] Figure 3 This is a schematic diagram of the corresponding relationship between RF power and temperature in a low-power scenario;

[0020] Figure 4It is a schematic diagram of the corresponding relationship between RF power and temperature in a closed-loop scenario;

[0021] Figure 5 is a system block diagram of temperature compensation according to another aspect of the present application;

[0022] Figure 6 is a schematic diagram of the structure of an electronic device according to another aspect of the present application; and

[0023] Figure 7 It is a schematic diagram of the structure of a computer-readable storage medium according to another aspect of the present application. DETAILED DESCRIPTION

[0024] In order to better understand the present application, a more detailed description will be made of various aspects of the present application with reference to the accompanying drawings. It should be understood that these detailed descriptions are only descriptions of exemplary embodiments of the present application, and are not intended to limit the scope of the present application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0025] It should be noted that in this specification, the expressions first, second, third, etc. are only used to distinguish one feature from another feature area, and do not represent any limitation on the features, especially do not represent any order of precedence. Therefore, without departing from the teaching of this application, the first file category discussed in this application may also be referred to as the second file category, the first file level may also be referred to as the second file level, and vice versa.

[0026] In the drawings, the thickness, size and shape of the components have been slightly adjusted for ease of illustration. The drawings are for illustration only and are not drawn strictly to scale. As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation, not as terms of degree, and are intended to account for the inherent deviations in measurements or calculations that would be recognized by one of ordinary skill in the art.

[0027] It should also be understood that expressions such as "include", "including", "have", "contain" and / or "comprising" are open rather than closed expressions in this specification, which indicate the presence of the stated features, elements and / or components, but do not exclude the presence of one or more other features, elements, components and / or combinations thereof. In addition, when expressions such as "at least one of..." appear after a list of listed features, they modify the entire list of features rather than just the individual elements in the list. In addition, when describing embodiments of the present application, "may" is used to mean "one or more embodiments of the present application". And, the term "exemplary" is intended to refer to an example or illustration.

[0028] Unless otherwise specified, all words (including engineering terms and scientific and technological terms) used in this article have the same meaning as those commonly understood by ordinary technicians in the field to which this application belongs. It should also be understood that, unless clearly stated in this application, words defined in common dictionaries should be interpreted as having the same meaning as their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal sense.

[0029] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. In addition, unless explicitly limited or contradictory to the context, the specific steps included in the method described in the present application are not necessarily limited to the order described, but can be performed in any order or in parallel. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0030] The background of this application is that the RF power of each component in the RF circuit will be affected by the ambient temperature, and the receiver or transmitter with built-in RF circuit usually works in a wide temperature environment, such as -40 degrees Celsius to 75 degrees Celsius, which causes the RF power of the RF circuit to be unable to maintain a stable state at different temperatures. Based on this, temperature compensation is required, that is, obtaining the corresponding power offset at different external temperature values, and then using the corresponding power offset at each external temperature value to compensate the RF power of the RF circuit, so that the RF circuit can have the same RF power at various external temperature values.

[0031] Figure 1 is a flow chart of a method for temperature compensation according to one aspect of the present application.

[0032] like Figure 1 As shown, the present application provides such a temperature compensation method, which may include:

[0033] Step S110, collecting multiple internal temperature values ​​of the measured element when processing an input signal, and actual radio frequency power of the measured element corresponding to each internal temperature value;

[0034] Step S120, calculating the power offset of the measured element when it is at each internal temperature value according to each internal temperature value and its corresponding actual RF power;

[0035] Step S130: Compensating the actual RF power using the power offset so that the component under test maintains outputting the target RF power at each internal temperature value.

[0036] In some embodiments, the main device for implementing the present application may include: a power compensation tool built into the computer, a comprehensive tester, and a component under test. The power compensation tool built into the computer is mainly used to provide an input signal to the component under test through the comprehensive tester, and to calculate the power offset that needs to be compensated for different internal temperature values ​​according to the corresponding RF power of the component under test at different internal temperature values, so that the component under test outputs the target RF power at each internal temperature value; a calibration file can also be created and a temperature compensation value can be obtained. The component under test is a radio frequency system that can transmit and receive, including PA and LNA (Low Noise Amplifier). Of course, it can also be other components, but PA and LNA are more sensitive to temperature changes, so this application uses these two components as the components under test for description. Among them, PA is an amplifier that can generate maximum power output to drive a certain load (such as a speaker); LNA is an amplifier with a very low noise coefficient, generally used as a high-frequency or intermediate-frequency preamplifier of various radio receivers (such as WiFi in mobile phones, computers or iPADs), and an amplification circuit of a highly sensitive electronic detection device. The integrated tester is used to debug the test conditions according to the power compensation tool built into the computer, and then provide the input signal of the power compensation tool to the component under test.

[0037] In some embodiments, a power compensation tool built into the computer generates an input signal according to the test requirements, and provides the input signal to the component under test through the integrated tester; the component under test processes the input signal, and the component under test will inevitably generate a certain amount of heat during the processing; then the power compensation tool will provide the input signal to the component under test at a preset number of times to ensure that the component under test can reach a sufficiently high internal temperature value by continuously processing the input signal; finally, when the internal temperature value of the component under test reaches the target temperature value, the input signal is stopped from being provided to the component under test. Obviously, the above process does not require the intervention of an external temperature box or other heating elements, and avoids the labor cost of multiple adjustments to the temperature value of the external temperature box. For example, the internal temperature value of the environment in which the current measured element is located is 25 degrees Celsius. When the power compensation tool provides an input signal to the measured element, the input signal can be a 24 decibel milliwatt (dBm) tone. The measured element will amplify the tone, and the temperature of the measured element will slowly rise. If the measured element does not directly reach the target temperature value by processing a tone with 24dBm once, the number of test iterations can be set so that the measured element generates enough heat to raise the temperature of the measured element to the target temperature value after continuously processing multiple tones with 24dBm. It is known to those skilled in the art that the number of iterations can be set according to actual conditions, and this application does not limit this.

[0038] In some embodiments, since the RF power generated by the DUT is affected by temperature, different RF powers are generated in different stages of processing the input signal, that is, in environments with different internal temperature values. Furthermore, at each stage when the DUT generates heat due to processing the input signal, the actual RF power of the DUT at each internal temperature value is collected.

[0039] In some embodiments, after collecting the internal temperature values ​​within a certain temperature range and the actual RF power of the measured element corresponding to them, a temperature compensation curve is constructed to characterize the corresponding relationship between each internal temperature value and the actual RF power of the measured element. It should be noted that since the relationship between the internal temperature values ​​within a certain temperature range and the actual RF power of the measured element corresponding to them is not a linear relationship, it is impossible to simply use a smooth curve or a straight line to define the relationship between the two. However, it can be imagined that when the numerical values ​​of the two internal temperature values ​​are infinitely close, the magnitude of the actual RF power of the measured element corresponding to them will also be infinitely close. Therefore, in the temperature interval formed by two adjacent internal temperature values, the relationship between the internal temperature value and the actual RF power of the measured element can be approximated as a linear relationship. In the present application, 1 degree Celsius is used as the temperature difference accuracy between adjacent internal temperature values ​​for collecting internal temperature values. Of course, a higher temperature difference accuracy can be set according to demand for collecting internal temperature values, which is not limited here.

[0040] Furthermore, a rectangular coordinate system is constructed with RF power (in decibel milliwatts dBm) as the vertical axis and internal temperature value (in degrees Celsius °C) as the horizontal axis, and multiple temperature compensation points consisting of each internal temperature value and its corresponding actual RF power of the measured element are determined in the rectangular coordinate system. Since the relationship between the internal temperature value and the actual RF power of the measured element in the same temperature interval can be approximately expressed as a linear relationship, in order to accurately describe the temperature compensation curve within a certain temperature range, the temperature range between two internal temperature values ​​with adjacent numerical values ​​can be taken as a temperature interval, and the curves of each temperature interval are drawn separately. Based on the above, when the temperature difference accuracy meets the requirements, the relationship between the internal temperature value and the actual RF power of the measured element in the same temperature interval can be approximately expressed as a linear relationship, that is, the temperature compensation points corresponding to the two end points of each temperature value interval can be connected, and the line segment corresponding to the connection line can represent the corresponding relationship between each internal temperature value in the corresponding temperature interval and the actual RF power of the measured element, and the slope of the line segment is the temperature compensation slope of the temperature interval. Finally, the set of line segments in each temperature interval that characterize the correspondence between the internal temperature value and the actual RF power of the corresponding measured element is the temperature compensation curve of the temperature range. It should be noted that the temperature compensation slope can be positive or negative.

[0041] In some embodiments, according to different power amplification requirements for the input signal, the RF power output by the measured element can be high power output or low power output. Of course, the measured element can also generate receiving gain in a closed-loop scenario. Therefore, in different demand scenarios, even in the same temperature range, the RF power values ​​of the measured element corresponding to each internal temperature value are different. In addition, since different regions use different frequency bands, for example, some regions use low frequency and some regions use medium frequency, there are different RF paths inside the measured element. Different RF paths can correspond to different temperature compensations. Even in the same RF power scenario and the same internal temperature value, the actual RF power values ​​of the measured element corresponding to each internal temperature value will result in different results.

[0042] Figure 2 This is a schematic diagram of the corresponding relationship between RF power and temperature in a high-power scenario; Figure 3 is a schematic diagram of the corresponding relationship between RF power and temperature in a low-power scenario; and Figure 4 This is a schematic diagram of the corresponding relationship between RF power and temperature in a closed-loop scenario.

[0043] like Figure 2 As shown in the figure, it is the corresponding relationship between RF power and temperature in a high-power scenario. The detected temperature range is 31°C to 50°C. Corresponding to each internal temperature value within this temperature range, the actual RF power of the measured component fluctuates between 22.34dBm and 22.77dBm. For example, when the internal temperature value is 31°C, the actual RF power of the measured component is 22.77dBm. When the internal temperature value is 48°C, 49°C or 50°C, the actual RF power of the measured component is 22.34dBm, etc., which are not listed here one by one. Figure 3 As shown in the figure, it is the corresponding relationship between RF power and temperature in low-power scenarios. The detected temperature range is 32℃ to 34℃. Corresponding to each internal temperature value within this temperature range, the actual RF power of the measured component fluctuates between -1.59dBm and -1.55dBm. For example, when the internal temperature value is 32℃, the actual RF power of the measured component is -1.55dBm, and when the internal temperature value is 33℃, the actual RF power of the measured component is -1.59dBm, etc., which are not listed here one by one. Figure 4 The figure shows the corresponding relationship between RF power and temperature in a closed-loop scenario. The detected temperature range is 31°C to 50°C. Corresponding to the internal temperature values ​​within this temperature range, the actual RF power of the measured component fluctuates between -19.14dBm and -18.82dBm. For example, when the internal temperature value is 43°C, the actual RF power of the measured component is -19.01dBm, and when the internal temperature value is 49°C, the actual RF power of the measured component is -19.14dBm, etc., which are not listed here one by one.

[0044] It should be noted that this application only lists the corresponding relationship between each internal temperature value and the actual RF power in high-power scenarios, low-power scenarios and closed-loop scenarios, to show that even the actual RF power corresponding to the same internal temperature value in different power scenarios has different values. Therefore, not all the intermediate frequency signal channels and low-frequency signal channels corresponding to different scenarios are listed and processed. However, in the actual test process, the temperature compensation slope of each temperature range will produce six different values ​​for different power scenarios and different signal channels. Subsequently, the six different temperature compensation slopes need to be processed separately according to different power scenarios and different signal channels, and then the power offset corresponding to different power scenarios and different signal channels at the same internal temperature value can be obtained to compensate the actual RF power according to the actual situation.

[0045] In some embodiments, the temperature compensation slopes of each temperature interval in the temperature compensation curve are respectively input into a computer-side power compensation tool, and the power compensation tool calculates the power offset corresponding to each internal temperature value based on the temperature compensation slopes of each internal temperature value and the temperature interval in which it is located, wherein the power compensation tool uses a power offset formula when calculating the power offset.

[0046] In some implementations, the power offset formula may be expressed as:

[0047]

[0048] In formula (1), M is the temperature compensation slope, T 1 is the normal temperature value, T 2 is the internal temperature value, D is the measured element at T 2 The power offset at .

[0049] For example, let the normal temperature value T 1 is 25℃, if the current internal temperature value T 2 If the temperature is 55℃, obtain T 2 The corresponding temperature compensation value M is -43, and then the measured component can be calculated by formula (1) at T 2 The power offset D is +1.26 dB. Of course, this example is the result in a high power scenario.

[0050] In some embodiments, the actual RF power is compensated by the power offset so that the measured element outputs the target RF power at each internal temperature value. For example, if the current actual RF power is 23dBm and the power offset is +1.26dB, the actual RF power is compensated by the power offset to obtain a target RF power of 24.26dBm.

[0051] In some embodiments, due to individual differences in the internal components of the measured element, multiple measured elements can be used for testing when obtaining the temperature compensation value. For example, 2 to 3 measured elements are selected, and the average of the temperature compensation values ​​of the multiple measured elements is used as the final temperature compensation value of this type of measured element. Exemplarily, the final temperature compensation value of the measured element can also be stored. In subsequent tests, the same type of measured elements can directly use the stored temperature compensation value to avoid repeated calculations, which is also conducive to improving the efficiency of temperature compensation.

[0052] According to a temperature compensation method of the present application, an input signal is provided to the element under test to increase the temperature of the element under test, thereby obtaining the power offset of the element under test in different temperature ranges, thereby eliminating the intervention cost of an external temperature box and alleviating the tedious process of manually adjusting the external temperature box to obtain multiple internal temperature values.

[0053] Figure 5 is a system block diagram of temperature compensation according to another aspect of the present application.

[0054] like Figure 5 As shown, a temperature compensation system 200 may include: an acquisition module 210, a power offset calculation module 220 and a compensation module 230. The acquisition module 210 is used to acquire multiple internal temperature values ​​when the measured element processes an input signal, and the actual RF power of the measured element corresponding to each internal temperature value. The power offset calculation module 220 is used to calculate the power offset of the measured element at each internal temperature value according to each internal temperature value and its corresponding actual RF power. The compensation module 230 is used to perform power compensation on the measured element at different temperatures based on the power offset, so that the measured element maintains the output target RF power at different temperatures.

[0055] In some embodiments, the execution steps of the power offset calculation module 220 include: constructing a temperature compensation curve for characterizing the correspondence between the internal temperature value and the actual RF power based on each internal temperature value and its corresponding actual RF power; determining the temperature compensation slope of each temperature interval in the temperature compensation curve, wherein the temperature interval is used to characterize the temperature range between two internal temperature values ​​with adjacent values; and calculating the power offset of the measured element when it is at each internal temperature value based on each temperature compensation slope and its corresponding internal temperature value.

[0056] In some implementations, the power offset formula may be expressed as: Where M is the temperature compensation slope, T 1 is the normal temperature value, T 2 is the internal temperature value, D is the measured element at T 2 The power offset at .

[0057] In some embodiments, an input signal generating module (not shown) is further included, which is used to transmit an input signal of preset power to the measured element multiple times, so that the measured element generates multiple continuous internal temperature values ​​when processing the input signal.

[0058] In some embodiments, an average calculation module (not shown) is also included to obtain multiple temperature compensation values ​​corresponding to the power offsets of multiple measured elements of the same type at various internal temperature values; and to calculate the average value of the multiple temperature compensation values ​​as the final temperature compensation value corresponding to the power offset of the measured elements of the same type.

[0059] According to a temperature compensation system of the present application, an input signal is provided to the element under test to increase the temperature of the element under test, thereby obtaining the power offset of the element under test in different temperature ranges, thereby eliminating the intervention cost of an external temperature box and alleviating the tedious process of manually adjusting the external temperature box to obtain multiple internal temperature values.

[0060] Figure 6 FIG. 1 is a schematic diagram of the structure of an electronic device according to another aspect of the present application. Figure 6 As shown, according to another aspect of the present application, an electronic device is also provided. The electronic device may include one or more processors and one or more memories. The memories store computer readable codes, and when the computer readable codes are executed by one or more processors, the temperature compensation method as described above may be executed.

[0061] The method or device according to the embodiment of the present application can also be used by Figure 6 The electronic device architecture shown in FIG. Figure 6As shown, the electronic device may include a bus 301, one or more CPUs 302, a read-only memory (ROM) 303, a random access memory (RAM) 304, a communication port 305 connected to a network, an input / output component 306, a hard disk 307, etc. The storage device in the electronic device, such as ROM 303 or hard disk 307, may store the temperature compensation method provided in the present application. The temperature compensation method may include: collecting multiple internal temperature values ​​when the measured element processes an input signal, and the actual RF power of the measured element corresponding to each internal temperature value; calculating the power offset of the measured element at each internal temperature value according to each internal temperature value and its corresponding actual RF power; and compensating the actual RF power using the power offset so that the measured element maintains the output target RF power at each internal temperature value. Further, the electronic device may also include a user interface 308. Of course, Figure 6 The architecture shown is only exemplary and can be omitted according to actual needs when implementing different devices. Figure 6 One or more components of an electronic device are shown.

[0062] Figure 7 is a schematic diagram of a computer-readable storage medium structure according to another aspect of the present application. Figure 7 As shown, a computer-readable storage medium 400 according to an embodiment of the present application is shown. Computer-readable instructions are stored on the computer-readable storage medium 400. When the computer-readable instructions are executed by the processor, the method for data synchronization according to the embodiment of the present application described with reference to the above figures can be executed. The storage medium 400 includes, but is not limited to, for example, volatile memory and / or non-volatile memory. Volatile memory may include, for example, random access memory (RAM) and cache memory (cache), etc. Non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc.

[0063] In addition, according to the implementation of the present application, the process described with reference to the flowchart above can be implemented as a computer software program. For example, the present application provides a non-transitory machine-readable storage medium, the non-transitory machine-readable storage medium stores machine-readable instructions, and the machine-readable instructions can be executed by a processor to execute instructions corresponding to the method steps of temperature compensation provided in the present application, for example: it may include: collecting multiple internal temperature values ​​when the measured element processes the input signal, and the actual RF power of the measured element corresponding to each internal temperature value; according to each internal temperature value and its corresponding actual RF power, calculating the power offset of the measured element at each internal temperature value; and using the power offset to compensate the actual RF power so that the measured element outputs the target RF power at each internal temperature value. When the computer program is executed by the central processing unit (CPU), the above functions defined in the method of the present application are executed.

[0064] The methods, apparatuses, and devices of the present application may be implemented in many ways. For example, the methods, apparatuses, and devices of the present application may be implemented by software, hardware, firmware, or any combination of software, hardware, and firmware. The above order of steps for the method is for illustration only, and the steps of the method of the present application are not limited to the order specifically described above unless otherwise specified. In addition, in some embodiments, the present application may also be implemented as programs recorded in a recording medium, which include machine-readable instructions for implementing the method according to the present application. Therefore, the present application also covers recording media storing programs for executing the method according to the present application.

[0065] In addition, the parts of the above-mentioned technical solutions provided in the embodiments of the present application that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail to avoid excessive redundancy.

[0066] The above description is only an implementation method of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of protection involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the technical concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A method for temperature compensation, characterized in that: include: Collecting multiple internal temperature values ​​of the measured element when processing an input signal, and actual radio frequency power of the measured element corresponding to each of the internal temperature values; The internal temperature value is generated by transmitting an input signal of a preset power to the measured element so that the measured element processes the input signal; Calculating the power offset of the measured element when it is at each of the internal temperature values ​​according to each of the internal temperature values ​​and the corresponding actual radio frequency power; as well as Performing power compensation on the component under test at different temperatures based on the power offset, so that the component under test maintains output target radio frequency power at different temperatures; The step of calculating the power offset of the element under test when the element under test is at each of the internal temperature values ​​according to the internal temperature values ​​and the actual radio frequency powers corresponding thereto includes: According to each of the internal temperature values ​​and the corresponding actual radio frequency power, constructing a temperature compensation curve for characterizing the corresponding relationship between the internal temperature value and the actual radio frequency power; Determining a temperature compensation slope of each temperature interval in the temperature compensation curve, wherein the temperature interval is used to represent a temperature range between two adjacent internal temperature values; and The power offset of the measured element when it is at each of the internal temperature values ​​is calculated according to each of the temperature compensation slopes and the corresponding internal temperature values.

2. The temperature compensation method according to claim 1, characterized in that: The power offset D, the temperature compensation slope M, the normal temperature value T1 and the internal temperature value T2 of the measured element at the internal temperature value satisfy the following conditions:

3. The temperature compensation method according to claim 1, characterized in that: Before collecting a plurality of internal temperature values ​​of the measured element when processing an input signal and the actual radio frequency power of the measured element corresponding to each of the internal temperature values, the method includes: An input signal of a preset power is transmitted to the measured element for multiple times, so that the measured element generates a plurality of continuous internal temperature values ​​when processing the input signal.

4. The temperature compensation method according to claim 1, characterized in that: Also includes: Acquire multiple temperature compensation values ​​corresponding to power offsets of multiple tested elements of the same type at each of the internal temperature values; as well as An average value of the plurality of temperature compensation values ​​is calculated as a final temperature compensation value corresponding to the power offset of the same type of the measured element.

5. A temperature compensation system, characterized in that: include: An acquisition module, used for acquiring a plurality of internal temperature values ​​of the measured element when processing an input signal, and an actual radio frequency power of the measured element corresponding to each of the internal temperature values; A power offset calculation module, used to calculate the power offset of the measured element when it is at each internal temperature value according to each internal temperature value and the corresponding actual radio frequency power; as well as A compensation module, used for performing power compensation on the measured element at different temperatures based on the power offset, so that the measured element maintains output target RF power at different temperatures; The execution steps of the power offset calculation module include: According to each of the internal temperature values ​​and the corresponding actual radio frequency power, constructing a temperature compensation curve for characterizing the corresponding relationship between the internal temperature value and the actual radio frequency power; Determining a temperature compensation slope of each temperature interval in the temperature compensation curve, wherein the temperature interval is used to represent a temperature range between two adjacent internal temperature values; and The power offset of the measured element when it is at each of the internal temperature values ​​is calculated according to each of the temperature compensation slopes and the corresponding internal temperature values.

6. The temperature compensation system according to claim 5, characterized in that: The power offset D, the temperature compensation slope M, the normal temperature value T1 and the internal temperature value T2 of the measured element at the internal temperature value satisfy the following conditions:

7. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps in the temperature compensation method according to any one of claims 1 to 4 are implemented.

8. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and the computer program is suitable for being loaded by a processor to execute the steps in the temperature compensation method according to any one of claims 1 to 4.

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