Inductive device
By employing a stacked and interconnected structure design in the inductor, the problems of large parasitic capacitance and low self-resonant frequency in existing inductors are solved, achieving higher self-resonant frequency and quality factor, and expanding the application range.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- REALTEK SEMICON CORP
- Filing Date
- 2021-11-24
- Publication Date
- 2026-05-08
AI Technical Summary
Existing symmetrical differential inductors have large parasitic capacitances, resulting in low self-resonance frequencies and low quality factors, which limits their application range.
The stacked structure design involves overlapping the first and second windings on different metal layers and coupling them using the first and second connection structures, which reduces the equivalent parasitic capacitance and improves the self-resonant frequency and quality factor.
It effectively reduces the equivalent parasitic capacitance, improves the self-resonant frequency and quality factor, and expands the application range of inductors.
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Figure CN116168917B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to an electronic device, and more particularly to an inductor device. Background Technology
[0002] Each type of inductor has its advantages and disadvantages. For example, the symmetrical differential inductor has a large parasitic capacitance, resulting in a lower self-resonance frequency and a lower quality factor. Therefore, the application range of these inductors is limited. Summary of the Invention
[0003] This invention relates to an inductor. The inductor includes a first winding, a second winding, a first connection structure, and a second connection structure. The first winding is located on a first metal layer and includes a first coil and a second coil. The second winding is located on a second metal layer and includes a third coil and a fourth coil. The third coil overlaps with the first coil in a direction perpendicular to the first coil, and the fourth coil overlaps with the second coil in a direction perpendicular to the second coil. The first connection structure includes a first interleaved structure and a second interleaved structure. The first interleaved structure has a first interleaved point and is used to couple the first coil and the second coil. The second interleaved structure has a second interleaved point and is used to couple the third coil and the fourth coil, wherein the first interleaved point and the second interleaved point do not overlap. The second connection structure is used to couple the second coil and the third coil.
[0004] In summary, the inductor device of the present invention, through its stacked structure, has the advantage of reducing the equivalent parasitic capacitance. Furthermore, the architecture of the present invention also enables the inductor device to improve its self-resonant frequency and quality factor. Attached Figure Description
[0005] Figure 1 This is a schematic diagram of an inductor device according to some embodiments of the present invention;
[0006] Figure 2A As shown in some embodiments of the present invention Figure 1 The diagram shows a partial structural schematic of the inductor device.
[0007] Figure 2B As shown in some embodiments of the present invention Figure 1 The diagram shows a partial structural schematic of the inductor device.
[0008] Figure 3 The inductor device shown in some embodiments of the present invention is along Figure 1 A schematic diagram of the cross-section of the virtual line AA in the diagram;
[0009] Figure 4 This is a partial structural schematic diagram of the first connection structure shown in some embodiments of the present invention;
[0010] Figure 5 This is a partial structural schematic diagram of the second connection structure shown in some embodiments of the present invention;
[0011] Figure 6 This is a schematic diagram of experimental data for an inductor device according to some embodiments of the present invention.
[0012] Explanation of reference numerals in the attached figures:
[0013] 100: Inductor
[0014] 101, 102, 103, 104, 105, 106, 107, 108: Connectors; 201, 202, 203, 204, 205, 206, 207: Connectors
[0015] C1: First winding; C2: Second winding
[0016] FC1~FC4, SC1~SC4: Coils; DP1~DP8, UP1~UP8: Half-coils
[0017] CN1: First connection structure; CN2: Second connection structure
[0018] CP1: First intersection point; CP2: Second intersection point
[0019] Cp: Parasitic capacitance
[0020] S1: First side; S2: Second side; S3: Third side; S4: Fourth side
[0021] IOE: Input / Output Terminal; A: Virtual Line; L, Q: Curve Detailed Implementation
[0022] The following detailed description is based on the embodiments and accompanying drawings. However, the specific embodiments described are only for explaining the present invention and are not intended to limit the present invention. The description of the structural operations is not intended to limit the order of their execution. Any structure that is recombined with elements and produces an apparatus with equivalent effects is within the scope of the present invention.
[0023] Unless otherwise specified, the terms used throughout the specification and the scope of the patent application generally have their ordinary meaning in the context of the art, the invention, and the specific content.
[0024] The terms "coupled" or "connected" as used in this article can refer to two or more components making direct physical or electrical contact with each other, or making indirect physical or electrical contact with each other, or to two or more components operating or moving together.
[0025] Please see Figure 1 , Figure 1 An inductor device 100 according to some embodiments of the present invention is described. The inductor device 100 includes a first winding C1, a second winding C2, a first connection structure CN1, a second connection structure CN2, and an input / output terminal IOE. In some embodiments, the first winding C1 and the second winding C2 overlap each other through the configuration of the first connection structure CN1 and the second connection structure CN2. It should be understood that the overlap described in this invention refers to substantially overlapping or substantially overlapping.
[0026] Specifically, the second connection structure CN2 and the input / output terminal IOE are located on a first side S1 of the inductor device 100, and the first connection structure CN1 is located on a second side S2 of the inductor device 100. For example... Figure 1 As shown, the first side S1 (e.g., the lower side) and the second side S2 (e.g., the upper side) are opposite sides.
[0027] For ease of understanding, the structure of the inductor 100 will be referred to in the following paragraphs. Figure 2A and Figure 2B Please provide a description. Also see [link / reference]. Figure 2A and Figure 2B , Figure 2A The structure of the inductor device 100 shown in some embodiments of the present invention on a first metal layer is described. Figure 2B The structure of the inductor device 100 according to some embodiments of the present invention on a second metal layer is described. In some embodiments, the first metal layer is the lower layer and the second metal layer is the upper layer, but the present invention is not limited thereto.
[0028] It is understandable that the structure of the first metal layer in the inductor device 100 is... Figure 1 and Figure 2A The structure is presented as a diagonal grid, while the inductor device 100 has a dual-metal layer structure. Figure 1 and Figure 2B It is presented in a dotted grid.
[0029] like Figure 2AAs shown, the first winding C1 is located in the first metal layer, and multiple coils FC1 to FC4 are arranged from the outside to the inside of the first winding C1. Coil FC1 includes half-coil DP1 and half-coil DP2, which are symmetrically arranged in the first metal layer to roughly form a square. Specifically, half-coil DP1 is located on a third side S3 of the inductor 100, and half-coil DP2 is located on a fourth side S4 of the inductor 100. The third side S3 (e.g., the left side) and the fourth side S4 (e.g., the right side) are opposite sides. The structure of the remaining coils FC2 to FC4 can be deduced similarly, so it will not be repeated.
[0030] like Figure 2B As shown, the second winding C2 is located on a second metal layer different from the first metal layer, and the second winding C2 also has multiple coils SC1 to SC4 arranged from the outside in. Coil SC1 includes half-coil UP1 and half-coil UP2, which are symmetrically arranged on the second metal layer to roughly form a square. Specifically, half-coil UP1 is located on the third side S3 of the inductor device 100 and overlaps with half-coil DP1 in a direction perpendicular to half-coil DP1. Half-coil UP2 is located on the fourth side S4 of the inductor device 100 and overlaps with half-coil DP2 in a direction perpendicular to half-coil DP2. In other words, coil SC1 of the second winding C2 overlaps with coil FC1 of the first winding C1 in a direction perpendicular to coil FC1 of the first winding C1. The structures of the remaining coils SC2 to SC4 can be deduced similarly, and therefore will not be repeated.
[0031] like Figure 2A and Figure 2B As shown, the first connection structure CN1 includes multiple connectors 101, 103, 105, and 107 located in the first metal layer and multiple connectors 102, 104, 106, and 108 located in the second metal layer. The second connection structure CN2 includes multiple connectors 201, 203, and 205 located in the first metal layer and multiple connectors 202, 204, 206, and 207 located in the second metal layer.
[0032] In detail, half-coil DP2 of the first winding C1 is directly coupled to the input / output terminal IOE on the first side S1, and coupled to one end of connector 102 through a via on the second side S2. The other end of connector 102 is coupled to half-coil DP3 of the first winding C1 through a via. That is, half-coil DP2 located in the first metal layer is coupled to half-coil DP3 located in the first metal layer through connector 102 located in the second metal layer.
[0033] Half-coil DP3 is coupled to one end of connector 202 through a through-hole on the first side S1. The other end of connector 202 is directly coupled to half-coil UP2 of the second winding C2. That is, half-coil DP3 located in the first metal layer is coupled to half-coil UP2 located in the second metal layer through connector 202 located in the second metal layer.
[0034] Half-coil UP2 is directly coupled to one end of connector 104 on the second side S2. The other end of connector 104 is directly coupled to half-coil UP3 of the second winding C2. That is, half-coil UP2 located in the second metal layer is coupled to half-coil UP3 located in the second metal layer through connector 104 located in the second metal layer.
[0035] Half-coil UP3 is coupled to one end of connector 203 through a through-hole on the first side S1. The other end of connector 203 is directly coupled to half-coil DP6 of the first winding C1. That is, half-coil UP3 located in the second metal layer is coupled to half-coil DP6 located in the first metal layer through connector 203 located in the first metal layer.
[0036] Half-coil DP6 is coupled to one end of connector 106 through a through-hole on the second side S2. The other end of connector 106 is coupled to half-coil DP7 of the first winding C1 through a through-hole. That is, half-coil DP6 located in the first metal layer is coupled to half-coil DP7 located in the first metal layer through connector 106 located in the second metal layer.
[0037] Half-coil DP7 is coupled to one end of connector 206 through a through-hole on the first side S1. The other end of connector 206 is directly coupled to half-coil UP6 of the second winding C2. That is, half-coil DP7 located in the first metal layer is coupled to half-coil UP6 located in the second metal layer through connector 206 located in the second metal layer.
[0038] Half-coil UP6 is directly coupled to one end of connector 108 on the second side S2. The other end of connector 108 is directly coupled to half-coil UP7 of the second winding C2. That is, half-coil UP6 located in the second metal layer is coupled to half-coil UP7 located in the second metal layer through connector 108 located in the second metal layer.
[0039] Half-coil UP7 is directly coupled to one end of connector 207 on the first side S1. The other end of connector 207 is directly coupled to half-coil UP8 of the second winding C2. That is, half-coil UP7 located in the second metal layer is coupled to half-coil UP8 located in the second metal layer through connector 207 located in the second metal layer. In some embodiments, a central tap (not shown) may be provided on connector 207.
[0040] Half-coil UP8 is coupled to one end of connector 107 through a through-hole on the second side S2. The other end of connector 107 is coupled to half-coil UP5 of the second winding C2 through a through-hole. That is, half-coil UP8 located in the second metal layer is coupled to half-coil UP5 located in the second metal layer through connector 107 located in the first metal layer.
[0041] Half-coil UP5 is coupled to one end of connector 205 through a through-hole on the first side S1. The other end of connector 205 is directly coupled to half-coil DP8 of the first winding C1. That is, half-coil UP5 located in the second metal layer is coupled to half-coil DP8 located in the first metal layer through connector 205 located in the first metal layer.
[0042] Half-coil DP8 is directly coupled to one end of connector 105 on the second side S2. The other end of connector 105 is directly coupled to half-coil DP5 of the first winding C1. That is, half-coil DP8 located in the first metal layer is coupled to half-coil DP5 located in the first metal layer through connector 105 located in the first metal layer.
[0043] Half-coil DP5 is coupled to one end of connector 204 through a through-hole on the first side S1. The other end of connector 204 is directly coupled to half-coil UP4 of the second winding C2. That is, half-coil DP5 located in the first metal layer is coupled to half-coil UP4 located in the second metal layer through connector 204 located in the second metal layer.
[0044] Half-coil UP4 is coupled to one end of connector 103 through a through-hole on the second side S2. The other end of connector 103 is coupled to half-coil UP1 of the second winding C2 through a through-hole. That is, half-coil UP4 located in the second metal layer is coupled to half-coil UP1 located in the second metal layer through connector 103 located in the first metal layer.
[0045] Half-coil UP1 is coupled to one end of connector 201 through a through-hole on the first side S1. The other end of connector 201 is directly coupled to half-coil DP4 of the first winding C1. That is, half-coil UP1 located in the second metal layer is coupled to half-coil DP4 located in the first metal layer through connector 201 located in the first metal layer.
[0046] Half-coil DP4 is directly coupled to one end of connector 101 on the second side S2. The other end of connector 101 is directly coupled to half-coil DP1 of the first winding C1. That is, half-coil DP4 located in the first metal layer is coupled to half-coil DP1 located in the first metal layer through connector 101 located in the first metal layer. In addition, half-coil DP1 is directly coupled to the input / output terminal IOE on the first side S1.
[0047] As can be seen from the above description, the first connection structure CN1 can be used to couple coils located on the same metal layer, while the second connection structure CN2 can be used to couple coils located on different metal layers.
[0048] In some embodiments, the input / output terminal IOE is used to input or output signals. As can be seen from the structure of the aforementioned inductor device 100, two overlapping half-coils can transmit signals of the same polarity (e.g., both positive or both negative). For example, the signal transmitted by half-coil DP1 of the first winding C1 has the same polarity as the signal transmitted by half-coil UP1 of the second winding C2. The arrangement of the remaining half-coils DP2-DP8 and UP2-UP8 can be deduced similarly, and therefore will not be repeated.
[0049] Two half-coils located on the same side and separated by a half-coil can transmit signals of the same polarity (e.g., both positive or both negative), while two adjacent half-coils located on the same side can transmit signals of different polarities (e.g., one positive and the other negative). For example, the signal transmitted by half-coil DP1 of the first winding C1 has the same polarity as the signal transmitted by half-coil DP5 of the first winding C1, but a different polarity than the signal transmitted by half-coil DP3 of the first winding C1. The configuration of the remaining half-coils DP2, DP4, DP6 to DP8, and UP1 to UP8 can be deduced similarly, and will not be repeated here.
[0050] It is also understandable that two half-coils in the same coil will transmit signals of different polarities (e.g., one is a positive signal and the other is a negative signal). For example, the signal transmitted by half-coil DP1 of coil FC1 is different in polarity from the signal transmitted by half-coil DP2 of coil FC1. The configuration of the remaining half-coils DP3 to DP8 and UP1 to UP8 can be deduced in the same way, so it will not be repeated here.
[0051] Therefore, in Figure 2A and Figure 2B In this embodiment, multiple half-coils DP2, DP3, UP2, UP3, DP6, DP7, UP6, and UP7 are used to transmit a first polarity signal (not shown in the figure), while multiple half-coils DP1, DP4, UP1, UP4, DP5, DP8, UP5, and UP8 are used to transmit a second polarity signal (not shown in the figure) different from the first polarity signal. For ease of understanding, the following will be used in conjunction with... Figure 3 This will illustrate the transmission of the first polarity signal and the second polarity signal in the inductor device 100.
[0052] Please see Figure 3 , Figure 3 As shown in some embodiments of the present invention, the inductor device 100 is along Figure 1A schematic diagram of the cross-section of a virtual line AA. Figure 3 In this embodiment, the first polarity signal transmitted in the plurality of half-coils DP2, DP3, UP2, UP3, DP6, DP7, UP6, and UP7 is a negative polarity signal, while the second polarity signal transmitted in the plurality of half-coils DP1, DP4, UP1, UP4, DP5, DP8, UP5, and UP8 is a positive polarity signal. Figure 3 As shown in the positive and negative polarity distribution, most parasitic capacitances Cp are formed between two adjacent half-coils in the same layer (e.g., half-coil DP1 and half-coil DP3). It is understandable that the number and location of these parasitic capacitances Cp are not directly related to the polarity distribution. Figure 3 The above is a limitation. For example, parasitic capacitance may also form between half-coils DP1 and UP3 located in different layers, but its capacitance value may be much smaller than the parasitic capacitance Cp between half-coils DP1 and DP3. As the distance between the multiple coils (e.g., half-coils DP1 and DP3) responsible for transmitting signals of different polarities in the inductor 100 increases, the capacitance value of each parasitic capacitance Cp decreases, thus significantly reducing the equivalent parasitic capacitance of the inductor 100. In some embodiments, the equivalent parasitic capacitance of the inductor 100 is 125 femtofarads (fF), which is approximately 83% lower than known technologies.
[0053] Please see Figure 4 , Figure 4 The description covers a portion of the structure of the first connection structure CN1 shown in some embodiments of the present invention. Figure 4 Zhongyu Figure 1 , Figure 2A or Figure 2B The same symbols represent the same or similar components, so they will not be repeated. In the first connection structure CN1, the connector 101 located in the first metal layer and the connector 102 located in the second metal layer are staggered to form a first staggered structure. The connector 103 located in the first metal layer and the connector 104 located in the second metal layer are staggered to form a second staggered structure. Figure 4 As shown, the first interlacing structure has a first interlacing point CP1, and the second interlacing structure has a second interlacing point CP2, and the first interlacing point CP1 and the second interlacing point CP2 do not overlap. In other words, the first interlacing structure and the second interlacing structure do not overlap.
[0054] It is worth noting that, through the first and second interleaved structures that do not overlap, the coupling of coils FC1 and FC2 and the coupling of coils SC1 and SC2 can be achieved without the connectors located in the third metal layer (different from the first and second metal layers).
[0055] For example Figure 4As shown, the connector 103 located in the first metal layer and the connector 102 located in the second metal layer are staggered and do not overlap with the connector 101 located in the first metal layer. In addition, the connector 104 located in the second metal layer and the connector 101 located in the first metal layer are staggered and do not overlap with the connector 102 located in the second metal layer.
[0056] Please see Figure 5 , Figure 5 The following describes a partial structure of the second connection structure CN2 shown in some embodiments according to the present invention. In the second connection structure CN2, connectors 201 and 202 are staggered, connectors 203 and 204 are staggered, connectors 205 and 206 are staggered, and connector 207 does not overlap with connectors 201 to 206.
[0057] In some embodiments, the first metal layer is an ultra-thick metal (UTM) layer, the second metal layer is an aluminum redistribution layer (AL-RDL), and the thickness of the second metal layer is less than the thickness of the first metal layer. It should be understood that the present invention is not limited thereto.
[0058] In the foregoing embodiments, the inductor 100 has a square structure (i.e., a quadrilateral structure). It should be understood that in other embodiments, the inductor may also have other polygonal structures. Furthermore, it should be understood that the number of coils in the first winding C1 and the number of coils in the second winding C2 are for illustrative purposes only, and the invention is not limited to the numbers shown in the figures.
[0059] Please see Figure 6 , Figure 6 Experimental data for the inductor device 100 shown in some embodiments according to the present invention are described. For example... Figure 6 As shown, the experimental curve for the quality factor of the inductor 100 using the architecture configuration of the present invention is Q, and the experimental curve for its inductance value is L. Compared with the prior art, the inductor device 100 using the architecture of the present invention has a better quality factor and inductance value. For example, at an operating frequency of 2 GHz, the quality factor (Q) of the inductor device 100 is approximately 10.97, which is an increase of approximately 5% compared with the prior art. In addition, the self-resonance frequency (SRF) of the inductor device 100 is approximately 4.9 GHz, which is an improvement of approximately 88% compared with the prior art. Since the operating frequency of the inductor device 100 at 2 GHz is far from the self-resonance frequency of the inductor device 100 at 4.9 GHz, the inductance value of the inductor device 100 is more stable at the operating frequency of 2 GHz (i.e., the change in the inductance value of the inductor device 100 is less significant within a range centered on the operating frequency of 2 GHz).
[0060] As can be seen from the above embodiments of the present invention, the inductor device 100 of the present invention, through its stacked structure (i.e., the first winding C1 and the second winding C2 substantially overlap each other), has the advantage of reducing the equivalent parasitic capacitance value. Furthermore, through the architecture of the present invention, the inductor device 100 can also improve the self-resonant frequency and quality factor.
[0061] Although the present invention has been disclosed above according to the embodiments, it is not intended to limit the scope of the present invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims of the present invention.
Claims
1. An inductor device, comprising: A first winding is located in a first metal layer, wherein the first winding includes a first coil and a second coil; A second winding is located in a second metal layer, wherein the second winding includes a third coil and a fourth coil, the third coil overlapping the first coil in a direction perpendicular to the first coil, and the fourth coil overlapping the second coil in a direction perpendicular to the second coil; A first connection structure, comprising: A first interleaved structure having a first interleaved point and used for coupling the first coil and the second coil; and A second interleaved structure having a second interleaved point and used for coupling the third coil and the fourth coil, wherein the first interleaved point and the second interleaved point do not overlap; and A second connection structure is provided for coupling the second coil to the third coil; The first coil includes a first half-coil and a second half-coil, and the third coil includes a fifth half-coil and a sixth half-coil; The first half-coil and the fifth half-coil are used to transmit a first polarity signal, which is either a positive polarity signal or a negative polarity signal; The second half-coil and the sixth half-coil are used to transmit a second polarity signal that is different from the first polarity signal.
2. The inductor device according to claim 1, characterized in that, The first interleaved structure includes a first connector located in the first metal layer, and the first connector is used to couple the first coil to the second coil.
3. The inductor device according to claim 2, characterized in that, The first interleaved structure further includes a second connector located in the second metal layer, and the second connector is used to couple the first coil and the second coil; The first connector and the second connector are staggered to form the first staggered point.
4. The inductor device according to claim 3, characterized in that, The second interleaved structure includes a third connector located in the first metal layer, and the third connector is used to couple the third coil to the fourth coil; The third connector is staggered with the second connector, and the third connector does not overlap with the first connector.
5. The inductor device according to claim 4, characterized in that, The second interleaved structure further includes a fourth connector located in the second metal layer, and the fourth connector is used to couple the third coil to the fourth coil; The fourth connector is staggered with the third connector to form the second stagger point; The fourth connector is staggered with the first connector and does not overlap with the second connector.
6. The inductor device according to claim 1, characterized in that, The first winding further includes a plurality of coils, and the inductor device further includes: An input / output terminal is provided for coupling to the outermost coil in the first winding, wherein the input / output terminal and the second connection structure are located on a first side of the inductor. The first connection structure is located on a second side of the inductor, and the first side is different from the second side.
7. The inductor device according to claim 6, characterized in that, The second coil includes a third half-coil and a fourth half-coil. The first half-coil and the third half-coil are located on a third side of the inductor, and the second half-coil and the fourth half-coil are located on a fourth side of the inductor, wherein the third side is different from the fourth side.
8. The inductor device according to claim 7, characterized in that, The fourth coil includes a seventh half-coil and an eighth half-coil. The fifth half-coil and the seventh half-coil are located on the third side of the inductor, and the sixth half-coil and the eighth half-coil are located on the fourth side of the inductor.
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