Wafer conveying equipment and conveying method

Abstract

The present application discloses a wafer transfer device and a transfer method, which relates to the technical field of semiconductors, including a front-end module of the device for transferring the cooled wafer back to the wafer box under atmospheric conditions, and transferring the wafer to be cooled to a buffer chamber for cooling; two buffer chambers are arranged between the front-end module of the device and the transfer chamber, for preheating and cooling the wafer; a transfer chamber, for transferring the wafer from the buffer chamber to the reaction chamber under vacuum conditions; a plurality of reaction chambers are arranged, and are arranged around the transfer chamber, for the preheated wafer to react. The present application can improve the transfer efficiency of the wafer by the front-end module of the device, by incorporating cooling and heating into the same chamber, and simultaneously arranging the front-end module of the device to convert and transfer the new and old wafers, thereby improving the processing efficiency of the entire manufacturing equipment.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductors, and in particular to a wafer transfer device and a transfer method. Background Art

[0002] The manufacture of semiconductor products requires hundreds of processes. The entire manufacturing process is divided into the following steps, including: wafer processing, oxidation, photolithography, etching, descaling, thin film deposition, interconnection, testing and packaging.

[0003] Photoresist removal is a very important step in the micro-machining process, and photoresist will directly affect the subsequent integrated circuit chip manufacturing process. In the existing platform for wafer de-resisting process, the wafer needs to be preheated in a chamber, and after preheating to a certain temperature, it is transferred to another chamber for heating and reaction. After the reaction, the wafer is transported to another chamber for cooling. The entire processing process is long, which greatly affects the processing efficiency of the wafer.

[0004] In addition, in the related art, the design and control method of the heating chamber is relatively complicated. When the heated wafer needs to be cooled, it needs to be cooled by a special cooling device. Although this increases the efficiency of heat radiation, it also causes heat loss. At the same time, a special cooling device is required to cool the high-temperature wafer. Summary of the invention

[0005] In order to solve at least one of the problems mentioned in the above background technology, the present application provides a wafer conveying equipment and a conveying method, which can improve the conveying efficiency of the wafer by the front-end module of the equipment, by integrating cooling and heating into the same chamber, and setting the front-end module of the equipment to convert and transfer new and old wafers, thereby improving the processing efficiency of the entire manufacturing equipment.

[0006] The specific technical solutions provided by the embodiments of this application are as follows:

[0007] In a first aspect, a wafer transfer device is provided, comprising: a device front-end module, a buffer chamber, a transfer chamber, and a reaction chamber;

[0008] The equipment front-end module is used to transfer the cooled wafers back to the wafer box under atmospheric conditions, and to transfer the wafers to be cooled to the buffer chamber for cooling;

[0009] The two buffer chambers are arranged between the equipment front-end module and the transfer chamber, and can be used independently for preheating, cooling and pre-cleaning wafers at the same time. The buffer chamber includes a buffer chamber body and an atmospheric isolation door and a vacuum isolation door connected to both sides of the buffer chamber body.

[0010] The transfer chamber is used to transfer the wafer from the buffer chamber to the reaction chamber under vacuum conditions;

[0011] The reaction chambers are provided in a plurality and are arranged around the transfer chamber for performing wafer reaction after preheating.

[0012] In a specific embodiment, a heating light source, a first card slot group, a second card slot group and a cooling plate are arranged in the buffer cavity;

[0013] The heating light source is used to heat the wafer. The first card slot group is arranged on the side wall of the buffer cavity and is located under the heating light source, and is used to receive the wafer for heating; the second card slot group is arranged at the lower part of the first card slot group, and is used to receive the wafer for cooling; the cooling plate is arranged on the inner side of the buffer cavity and is located on the side opposite to the second card slot group, and is used to cool the wafer on the second card slot group.

[0014] In a specific embodiment, the heating light source is a disc structure, and the size of the heating light source corresponds to the size of the wafer;

[0015] A quartz window is also provided on the side of the heating light source facing the wafer to be heated;

[0016] Wherein, the first card slot group includes two quartz card slots arranged opposite to each other on the inner side wall of the buffer chamber, and the surfaces of the quartz card slots contacting the wafer are provided with first exhaust grooves;

[0017] Among them, the second slot group includes two aluminum slots arranged opposite to the inner wall of the buffer cavity, the aluminum slot is located at the lower part of the quartz slot and corresponds to the position of the quartz slot on the same side, and a second exhaust groove is opened on the surface of the aluminum slot in contact with the wafer.

[0018] In a specific embodiment, the cooling plate is an aluminum cooling plate, and a cooling channel, an inlet and an outlet are provided in the cooling plate, and a cooling liquid or a cooling gas flows in the cooling channel;

[0019] A reflective component is disposed at one end of the cooling plate close to the heating light source, and the reflective component is located at the upper part of the first slot group;

[0020] Wherein, the reflective component is a reflective coating or a reflective baffle.

[0021] In a specific embodiment, the atmosphere isolation door is disposed between the equipment front-end module and the buffer cavity;

[0022] The vacuum isolation door is arranged between the buffer chamber and the transfer chamber, and between the transfer chamber and the reaction chamber.

[0023] In a specific embodiment, the equipment front-end module includes an equipment front-end body, a first transfer robot and a wafer box;

[0024] The equipment front end body is arranged close to the buffer cavity, and the first transfer robot is installed on the equipment front end body and is used to transfer the cooled wafers from the buffer cavity back to the wafer box;

[0025] The wafer box is arranged on a side of the front end body of the equipment away from the buffer cavity, and at least one wafer box is arranged;

[0026] A wafer box carrier is also provided at the lower part of the wafer box, and the wafer box carrier is used to receive the wafer box.

[0027] In a specific embodiment, the transfer chamber includes a transfer chamber body and a second transfer robot installed on the upper part of the transfer chamber body;

[0028] At least two second transfer robots are symmetrically arranged to transfer wafers between the reaction chamber and the buffer chamber;

[0029] The second transfer robot at least includes a first arm and a second arm, and the first arm and the second arm respectively include a plurality of wafer picking fingers, so that the first arm or the second arm can pick up and place multiple wafers at a time.

[0030] In a specific embodiment, each of the reaction chambers includes at least two reaction chambers, all of which are arranged around the transfer chamber body, and the two reaction chambers can react simultaneously or individually.

[0031] In a second aspect, a conveying method based on the wafer conveying device as described above is provided, the method comprising:

[0032] Step S1, the transfer chamber transfers the wafer in the reaction chamber to one of the buffer chambers, and transfers the new wafer in the buffer chamber into the reaction chamber for reaction;

[0033] Step S2, adjusting the buffer cavity from a vacuum state to an atmospheric state, and performing a cooling operation;

[0034] Step S3, the front-end module of the equipment transfers the cooled wafer back to the wafer box, and at the same time transfers the new wafer into the buffer chamber;

[0035] Step S4, adjusting the buffer chamber to be in a vacuum state, and preheating the wafers in the buffer chamber;

[0036] After preheating to the first preset temperature, repeat steps S1 to S4;

[0037] Wherein, the transmission cavity and the equipment front-end module work simultaneously.

[0038] In a specific embodiment, it also includes:

[0039] Step S101 executed simultaneously with step S1, the equipment front-end module transfers the cooled wafer in another buffer chamber back to the wafer box, and transfers a new wafer into this buffer chamber;

[0040] Step S102, performed simultaneously with step S2, adjusting the buffer chamber to be in a vacuum state, and preheating the wafers in the buffer chamber;

[0041] Step S103 executed simultaneously with step S3, the transfer chamber transfers the preheated wafers in the buffer chamber to the reaction chamber for reaction, and transfers the reacted wafers in the reaction chamber back to the buffer chamber;

[0042] Step S104, performed simultaneously with step S4, adjusting the buffer cavity from a vacuum state to an atmospheric state, and performing a cooling operation;

[0043] After cooling to the second preset temperature, steps S101 to S104 are repeated.

[0044] In a specific embodiment, the cooling operation in the buffer cavity specifically includes:

[0045] The second transfer robot in the transfer chamber transports the wafer to the second card slot group in the buffer chamber, and cools the wafer through a cooling plate;

[0046] The wafer in the buffer chamber is preheated, specifically including:

[0047] The first transfer robot of the front-end module of the equipment transports the wafer to the first card slot group in the buffer cavity, and at the same time, the heating light source is turned on to start irradiating and heating the wafer.

[0048] In a specific embodiment, the method further comprises:

[0049] Setting the cooling power in the buffer chamber according to the size of the wafer to be processed;

[0050] A first preset cooling time threshold is set so that the wafer in the buffer chamber is cooled to a second preset temperature.

[0051] The embodiments of the present application have the following beneficial effects:

[0052] 1. The embodiments of the present application provide a device front-end module, a buffer chamber, a transfer chamber and a reaction chamber, wherein the device front-end module is used to transfer the cooled wafers back to the wafer box under atmospheric conditions, and transfer the wafers to be cooled to the buffer chamber for cooling; the buffer chamber is used to preheat the wafers before they enter the reaction chamber; the transfer chamber is used to transfer the wafers from the buffer chamber to the reaction chamber through a vacuum robot, and then realize the reaction process of the wafers in the reaction chamber. Through the structural layout of the above equipment, the wafer transfer efficiency between the various components is optimized, thereby maximizing the efficiency of wafer transfer and processing on the high-temperature equipment platform.

[0053] 2. Two buffer chambers are set up, and the dual buffer chambers can independently preheat and cool the wafers, and the two buffer chambers operate simultaneously, further improving the equipment platform's wafer processing efficiency.

[0054] 3. The equipment platform includes an atmospheric isolation door and a vacuum isolation door in the middle. The atmospheric isolation door is arranged between the equipment front-end module and the buffer chamber, and the atmospheric isolation door is used to control the transmission environment of the wafer between the equipment front-end module and the buffer chamber; vacuum isolation doors are arranged between the buffer chamber and the transmission chamber, and between the transmission chamber and the reaction chamber to ensure that the wafer can be transmitted between the two in a vacuum environment.

[0055] 4. The buffer chamber is used to heat and cool the wafer. After passing through the cooling structure of the device, the wafer can be quickly cooled to room temperature before leaving the chamber, which shortens the time to leave the chamber and realizes efficient use of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0057] Figure 1 The overall structural schematic diagram of the wafer transfer device according to the present application is shown;

[0058] Figure 2 A schematic diagram showing the structure of the buffer cavity according to the present application is shown;

[0059] Figure 3 A schematic structural diagram of a first card slot group according to the present application is shown;

[0060] Figure 4 A schematic diagram showing the structure of the cooling channel according to the present application is shown;

[0061] Figure 5A schematic diagram showing a specific structure of the second transmission robot according to the present application is shown;

[0062] Figure 6 A schematic diagram showing a transmission method according to the present application;

[0063] Figure 7 A schematic diagram showing the process flow of the two buffer chambers working in coordination according to the present application;

[0064] In the figure, 1. equipment front-end module; 2. buffer chamber; 201. heating light source; 202. cooling plate; 203. first card slot group; 204. second card slot group; 205. quartz window; 206. quartz card slot; 207. first exhaust slot; 210. cooling channel; 211. inlet; 212. outlet; 213. reflective component; 3. transfer chamber; 31. transfer chamber body; 32. second transfer robot; 4. reaction chamber; 5. atmosphere isolation door; 6. vacuum isolation door; 11. equipment front-end body; 12. first transfer robot; 101. main connecting shaft; 102. first connecting arm; 103. second connecting arm; 104. wafer picking finger; 13. wafer box carrier; 14. wafer box. DETAILED DESCRIPTION

[0065] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0066] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.

[0067] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0068] The “upper” and “lower” involved in the embodiments of this application are all Figure 1 The orientation shown in is the reference.

[0069] Embodiment 1

[0070] A wafer transfer device, such as Figure 1 As shown, it includes: a device front-end module 1, a buffer chamber 2, a transfer chamber 3 and a reaction chamber 4. Specifically, the device front-end module 1 is used to transfer the cooled wafer back to the wafer box 14 under atmospheric conditions, and transfer the wafer to be cooled to the buffer chamber 2 for cooling; the buffer chamber 2 is arranged between the device front-end module 1 and the transfer chamber 3, and is used to preheat, pre-clean and cool the wafer; the transfer chamber 3 is used to transfer the wafer from the buffer chamber 2 to the reaction chamber 4 under vacuum conditions, and to transfer the wafer that has completed the reaction in the reaction chamber 4 back to the buffer chamber 2 for cooling. There are several reaction chambers 4, which are arranged around the transfer chamber 3 for wafer reaction.

[0071] like Figure 2 As shown, two buffer chambers 2 are provided, and the two buffer chambers 2 are connected and can independently preheat and cool the wafer. One side of the buffer chamber 2 is connected to the equipment front-end module 1, and the other side is connected to the transfer chamber 3. The two buffer chambers 2 have the same structure and can switch between the atmospheric state and the vacuum state.

[0072] Specifically, the heating light source 201 in the buffer chamber 2 is an infrared light source, which is arranged at the top of the buffer chamber 2 to irradiate and heat the wafer, and when the heating light source 201 starts to heat the wafer, the buffer chamber 2 is evacuated. By arranging the wafer to be heated in a vacuum environment, the problem of metal contamination on the wafer in a high temperature environment can be avoided, which is beneficial to stabilizing the properties of the heated wafer itself.

[0073] Preferably, a cleaning nozzle is also provided in the buffer chamber 2, so that the pollutants on the surface of the wafer are firstly removed while the wafer is preheated, which is beneficial to the subsequent reaction.

[0074] In a specific embodiment, the heating light source 201 is set to a disk structure, and the disk structure includes but is not limited to a circle and a regular polygon. The heating light source 2 in this embodiment is set to a disk shape, and the disk-shaped light emitted by the disk structure light source can better cooperate with the wafer, thereby improving the uniformity of heating the wafer. At the same time, the size of the heating light source 201 is set to correspond to the size of the wafer, that is, the radius of the disk-shaped heating light source 201 is set to correspond to the size of the wafer, and the disk-shaped heating light source 201 corresponding to the size of the wafer is specifically set to φ300mm for a 12-inch wafer; at the same time, the distance between the heating light source 201 and the upper surface of the wafer is set to be 30 to 100mm, and the distance between the heating light source 201 and the upper surface of the wafer in this embodiment is 40mm.

[0075] In a specific embodiment, a quartz window 205 is further provided on the side of the heating light source 201 facing the wafer to be heated. The quartz window 205 allows infrared light to pass through and can seal the buffer cavity 2 .

[0076] like Figure 3 As shown, the first slot group 203 is arranged on the side wall of the buffer chamber 2 and is located under the heating light source 201, and is used to receive the wafer for heating. The first slot group 203 includes two quartz slots 206 arranged relatively on the inner wall of the buffer chamber 2. The two quartz slots 206 have the same height and are used to receive the wafer. Since the temperature of the wafer during heating is relatively high, the slot is selected as a quartz slot 206. The thermal conductivity coefficient of the quartz slot 206 is 1.3W / mK, and the thermal conductivity coefficient of aluminum is above 200W / mK. The thermal conductivity coefficient of the quartz slot 206 is relatively low and is resistant to high temperatures, and can withstand temperatures exceeding 300°C. Figure 3 As shown, a first exhaust groove 207 is opened on the surface of the quartz slot 206 that contacts the wafer. A plurality of first exhaust grooves 207 are evenly distributed on the surface of the quartz slot 206. The first exhaust grooves 207 are located at the contact position between the wafer and the quartz slot 206 to prevent the wafer from being adsorbed on the quartz slot 206 and being difficult to remove.

[0077] The second slot group 204 is arranged on the side wall of the buffer chamber 2 and is located at the lower part of the second slot group 204, and is used to receive the wafer for cooling. The second slot group 204 is arranged in sequence along the side wall of the buffer chamber 2 from top to bottom. The second slot groups 204 are arranged in parallel in the vertical direction. In this embodiment, the second slot group 204 is arranged in three groups. When the wafer is heated to a preset temperature on the first slot group 203, the high-temperature wafer is transferred to the conveying platform at this time. The conveying platform is kept in a high-temperature state and transferred to the reaction chamber for process treatment. There are several reaction chambers. When the wafers in the multiple reaction chambers have completed the reaction, the multiple wafers are placed in the second slot group 204 respectively, and then the wafers are cooled. In this way, multiple wafers to be cooled can be cooled at the same time, thereby improving the cooling efficiency of the device for the wafers. Each second slot group 204 includes two aluminum slots arranged on the inner side wall of the buffer cavity 2, and the aluminum slots are located at the lower part of the quartz slot 206 and correspond to the position of the quartz slot 206 on the same side. Since the temperature of the wafer is relatively high, in order to quickly cool the wafer, the second slot group 204 includes aluminum slots. The thermal conductivity of aluminum is relatively high, which can achieve rapid cooling of the wafer. A second exhaust groove is provided on the surface where the aluminum slot contacts the wafer. There are several second exhaust grooves evenly distributed on the surface of the aluminum slot. The second exhaust groove is at the contact position between the wafer and the aluminum slot to prevent the wafer from being adsorbed on the aluminum slot and being difficult to remove.

[0078] Specifically, Figure 2 and4 As shown, the cooling plate 202 is arranged inside the buffer cavity 2 and is located on the side opposite to the second card slot group 204, and is used to cool the wafer on the second card slot group 204. The cooling plate 202 is an aluminum cooling plate. The thermal conductivity of aluminum is relatively high, and the wafer can be cooled quickly. The first card slot group 203 and the second card slot group 204 are arranged back to back against the cooling plate 202. The specific cooling plate 202 has two parts, which are respectively arranged on the two side walls of the buffer cavity 2. A cooling channel 210 is arranged in the cooling plate 202, and a cooling liquid or or cooling gas, the cooling channel 210 is distributed in the entire cooling plate 202, and a buffer cavity 2 is extended from the bottom of the cooling plate 202, and an inlet 211 and an outlet 212 are provided, the inlet 211 is used for inputting cooling liquid or cooling gas into the cooling plate 202, the outlet 212 is used for outputting the used cooling liquid or cooling gas from the cooling plate 202, and a liquid supply component or a gas supply component is connected to the outside of the cooling plate 202, and cooling liquid or cooling gas is introduced into the cooling plate 202 when cooling is needed, thereby achieving rapid cooling of the wafer.

[0079] The buffer chamber 2 includes a buffer chamber body and an atmospheric isolation door (5) and a vacuum isolation door (6) connected on both sides of the buffer chamber body. Since the wafer is transferred between the equipment front-end module 1 and the buffer chamber 2 under atmospheric pressure, the atmospheric isolation door 5 is arranged between each module to ensure the environment for wafer transfer between each module. The atmospheric isolation door 5 is arranged between the equipment front-end module 1 and the buffer chamber 2, and the atmospheric isolation door 5 covers the position between the two groups of buffer chambers 2 and the equipment front-end module 1. Since it is necessary to realize the transfer of wafers between the buffer chamber 2 and the transfer chamber 3 under a vacuum environment, a vacuum isolation door 6 is arranged between the buffer chamber 2 and the transfer chamber 3, that is, the vacuum isolation door 6 is connected to the two buffer chambers 2 at the same time, so as to realize the transfer between the wafers in the two buffer chambers 2 and the transfer chamber 3.

[0080] In order to realize the storage and transfer of wafers by the equipment front-end module 1, the equipment front-end module 1 specifically includes an equipment front-end body 11, a first transfer robot 12 and a wafer box 14. The equipment front-end body 11 is connected to the buffer chamber 2 through the atmosphere isolation door 5, and the first transfer robot 12 is installed on the equipment front-end body 11, which is used to transfer the cooled wafers from the buffer chamber 2 back to the wafer box 14, and to transfer new wafers into the buffer chamber 2. The wafer box 14 is arranged on the side of the equipment front-end body 11 away from the buffer chamber 2. There is at least one wafer box 14, and three wafer boxes 14 are arranged in this embodiment, and along Figure 1 In the direction shown, from top to bottom, a wafer box carrier 13 is also provided at the lower part of the wafer box 14 , and the wafer box carrier 13 is used to receive the wafer box 14 to ensure that the wafer box 14 is stably placed on the equipment front-end module 1 .

[0081] It should be noted that the first transfer robot 12 is an atmospheric transfer robot, and the first transfer robot 12 includes a robot arm A and a robot arm B, and the robot arm A and the robot arm B have the same structure and can operate independently, such as Figure 3 The schematic diagram of the robot arm A is shown, which includes a main connecting shaft 101, a first connecting arm 102 perpendicular to the main connecting shaft 101 and rotatably connected to the main connecting shaft 101, one end of the first connecting arm 102 is rotatably connected to the second connecting shaft, a second connecting arm 103 rotatably connected to the first connecting arm 102 through the second connecting shaft, and a third connecting shaft is rotatably passed through one end of the second connecting arm 103 away from the first connecting arm 102, and a plurality of wafer picking fingers 104 are connected to the second connecting arm 103 through the third connecting shaft. In this embodiment, three wafer picking fingers 104 are provided. Through the above configuration, the first transfer robot 12 can simultaneously transport three wafers.

[0082] In order to improve the overall transfer efficiency of the entire equipment platform, a transfer chamber 3 is provided, including a transfer chamber main body 31 and a second transfer robot 32 installed on the upper part of the transfer chamber main body 31. The top view of the transfer chamber main body 31 is set to be a square, and one side of the transfer chamber main body 31 is connected to the buffer chamber 2 through a vacuum isolation door 6. A second transfer robot 32 is installed on the upper part of the transfer chamber main body 31. Two second transfer robots 32 are symmetrically arranged to transfer the reacted wafers in the reaction chamber to the two buffer chambers 2 for cooling, and transfer the unreacted wafers in the two buffer chambers 2 into the reaction chamber 4.

[0083] It should be noted that the second transfer robot 32 is a vacuum robot, and the vacuum robot includes two arms, specifically a first arm and a second arm; wherein the first arm and the second arm have the same structure, and the structure of the first arm is as follows: Figure 5 As shown, the second arm and the first arm both include multiple wafer picking fingers 104. In this embodiment, the first arm and the second arm include three wafer picking fingers 104, so that the first arm and the second arm on the second transfer robot 32 can pick up and place multiple wafers at a time.

[0084] The outer periphery of the transmission chamber 3 is provided with a reaction chamber 4, and a plurality of reaction chambers 4 are provided, and are arranged around the outer periphery of the transmission chamber body 31, such as Figure 1As shown, in this embodiment, three reaction chambers 4 are arranged around the transfer chamber 3, and the reaction chambers 4 are arranged on the periphery of the transfer chamber 3 and connected by a vacuum isolation door 6; the three reaction chambers 4 are distributed in a cluster on the periphery of the transfer chamber 3, specifically including reaction chamber A, reaction chamber B and reaction chamber C, and each reaction chamber 4 includes two connected or independent reaction chambers, and one reaction chamber can realize the reaction process of multiple wafers at the same time. The reaction chambers are all within the action range of the second transfer robot 32, so that the wafers can be transferred between the transfer chamber 3 and the reaction chamber 4 by the second transfer robot 32.

[0085] By sequentially arranging the equipment front-end module 1, the buffer chamber 2, the transfer chamber 3 and the reaction chamber 4 in this embodiment, and the isolation valve group arranged between the modules, the transfer efficiency of the equipment front-end module 1 for the wafer is improved, and the processing efficiency of the entire manufacturing equipment is improved, thereby enhancing the output capacity of the wafer in the process flow.

[0086] Embodiment 2

[0087] Corresponding to the above embodiment, the present application provides a conveying method based on the wafer conveying device as described above, such as Figure 6 As shown, the method comprises the following steps:

[0088] Step S1, the transfer chamber transfers the wafer in the reaction chamber to one of the buffer chambers, and transfers the new wafer in the buffer chamber into the reaction chamber for reaction;

[0089] Step S2, adjusting the buffer cavity from a vacuum state to an atmospheric state, and performing a cooling operation;

[0090] Step S3, the front-end module of the equipment transfers the cooled wafer back to the wafer box, and at the same time transfers the new wafer into the buffer chamber;

[0091] Step S4, adjusting the buffer chamber to be in a vacuum state, and preheating the wafers in the buffer chamber;

[0092] After preheating to the first preset temperature, repeat steps S1 to S4;

[0093] Wherein, the transmission cavity and the equipment front-end module work simultaneously.

[0094] In a specific embodiment, it also includes:

[0095] Step S101 executed simultaneously with step S1, the equipment front-end module transfers the cooled wafer in another buffer chamber back to the wafer box, and transfers the new wafer into this buffer chamber;

[0096] Step S102, performed simultaneously with step S2, adjusting the buffer chamber to be in a vacuum state, and preheating the wafers in the buffer chamber;

[0097] Step S103 executed simultaneously with step S3, the transfer chamber transfers the preheated wafer in the buffer chamber to the reaction chamber for reaction, and transfers the reacted wafer in the reaction chamber back to the buffer chamber;

[0098] Step S104, performed simultaneously with step S4, adjusting the buffer cavity from a vacuum state to an atmospheric state, and performing a cooling operation;

[0099] After cooling to the second preset temperature, steps S101 to S104 are repeated.

[0100] It should be noted that one of the second transfer robots on the transfer chamber moves the wafer in the reaction chamber to one of the buffer chambers, and at the same time, the first transfer robot on the equipment front-end module also starts working. There is no time gap between the two. The robots on the transfer chamber and the equipment front-end module work at the same time to achieve uninterrupted operation of the two buffer chambers, thereby improving the efficiency of wafer processing.

[0101] In a specific embodiment, the cooling operation in the buffer cavity specifically includes:

[0102] The second transfer robot in the transfer chamber transports the wafer to the second card slot group in the buffer chamber, and cools the wafer through a cooling plate;

[0103] The wafer in the buffer chamber is preheated, specifically including:

[0104] The first transfer robot of the front-end module of the equipment transports the wafer to the first card slot group in the buffer cavity, and at the same time, the heating light source is turned on to start irradiating and heating the wafer.

[0105] In a specific embodiment, the cooling time is controlled to control the wafer to cool to the second preset temperature and stop cooling, and the wafer is controlled to preheat to the first preset temperature and stop preheating. Specifically, the cooling power in the buffer chamber is set according to the size of the wafer to be processed; and the first preset cooling time threshold is set so that the wafer in the buffer chamber is cooled to the second preset temperature. Through the above settings, reasonable use of resources can be achieved.

[0106] The specific process is as follows: Figure 7As shown, the second transfer robot of the transfer chamber sequentially transfers the new wafer from one of the buffer chambers to the reaction chamber to exchange the old and new wafers, starts the reaction process in the reaction chamber for the new wafer, and transfers the reacted wafer in the reaction chamber back to this buffer chamber for cooling; then the buffer chamber that has completed the exchange of the new and old wafers is broken to the atmosphere and the wafer is cooled. At the same time, the first transfer robot of the front-end module of the equipment sequentially transfers the cooled old wafer from another buffer chamber back to the wafer box, and transfers the new wafer in the wafer box to this buffer chamber. At the same time, the other buffer chamber that has completed the exchange of the new and old wafers is vacuumed.

[0107] Next, the first transfer robot on the front-end module of the equipment transfers the cooled old wafers from the buffer chamber back to the wafer box in sequence, and exchanges the old and new wafers, that is, transfers the new wafers in the wafer box to the buffer chamber; at the same time, another robot in the transfer chamber transfers the new wafers from another buffer chamber to the idle reaction chamber in sequence, and starts to react to the new wafers.

[0108] When the new wafers in the wafer box are transferred to the buffer chamber, one of the buffer chambers after the exchange of the new and old wafers is evacuated, and the wafers in the buffer chamber are preheated to achieve the preheating of the wafers to a first preset temperature. The purpose of preheating is to reduce the reaction time of the wafers in the reaction chamber, thereby further improving the processing efficiency of the wafers. At the same time, the other buffer chamber after the exchange of the new and old wafers is broken to the atmosphere, and the wafers in the other buffer chamber are cooled.

[0109] After the wafers in the buffer chamber are heated to the first preset temperature, the heating is stopped. At this time, the transfer chamber robot transfers the new wafers from the buffer chamber to the reaction chamber in sequence to exchange the old and new wafers, and starts the reaction process in the reaction chamber for the new wafers. The reacted wafers in the reaction chamber are returned to the buffer chamber for cooling, and the above steps S1 to S4 are repeated until the processing of all wafers is completed.

[0110] After the wafers in the other buffer chamber are cooled to the second preset temperature, the cooling process is stopped. At this time, the atmospheric robot of the front-end module of the equipment will sequentially transfer the cooled old wafers from this buffer chamber to the wafer box, and transfer the new wafers in the wafer box to this buffer chamber. Then, the buffer chamber that has completed the exchange of the old and new wafers is broken to the atmosphere and the wafers are cooled. At the same time, the other buffer chamber that has completed the exchange of the old and new wafers is vacuumed. Repeat the above steps S101 to S104 until all wafers are processed.

[0111] In a specific embodiment, the wafer transfer equipment includes: an equipment front-end module, a buffer chamber, a transfer chamber, and a reaction chamber;

[0112] The equipment front-end module is used to transfer the cooled wafers back to the wafer box under atmospheric conditions, and to transfer the wafers to be cooled to the buffer chamber for cooling;

[0113] The two buffer chambers are arranged between the equipment front-end module and the transfer chamber, and can be used independently for preheating and cooling wafers at the same time;

[0114] The transfer chamber is used to transfer the wafer from the buffer chamber to the reaction chamber under vacuum conditions;

[0115] The reaction chambers are provided in a plurality and are arranged around the transfer chamber for performing wafer reaction after preheating.

[0116] In a specific embodiment, a heating light source, a first card slot group, a second card slot group and a cooling plate are arranged in the buffer cavity;

[0117] The heating light source is used to heat the wafer. The first card slot group is arranged on the side wall of the buffer cavity and is located under the heating light source, and is used to receive the wafer for heating; the second card slot group is arranged at the lower part of the first card slot group, and is used to receive the wafer for cooling; the cooling plate is arranged on the inner side of the buffer cavity and is located on the side opposite to the second card slot group, and is used to cool the wafer on the second card slot group.

[0118] In a specific embodiment, the heating light source is a disc structure, and the size of the heating light source corresponds to the size of the wafer;

[0119] A quartz window is also provided on the side of the heating light source facing the wafer to be heated;

[0120] Wherein, the first card slot group includes two quartz card slots arranged opposite to each other on the inner side wall of the buffer chamber, and the surfaces of the quartz card slots contacting the wafer are provided with first exhaust grooves;

[0121] Among them, the second slot group includes two aluminum slots arranged opposite to the inner wall of the buffer cavity, the aluminum slot is located at the lower part of the quartz slot and corresponds to the position of the quartz slot on the same side, and a second exhaust groove is opened on the surface of the aluminum slot in contact with the wafer.

[0122] In a specific embodiment, the cooling plate is an aluminum cooling plate, and a cooling channel, an inlet and an outlet are provided in the cooling plate, and a cooling liquid or a cooling gas flows in the cooling channel;

[0123] A reflective component is disposed at one end of the cooling plate close to the heating light source, and the reflective component is located at the upper part of the first slot group;

[0124] Wherein, the reflective component is a reflective coating or a reflective baffle.

[0125] In a specific embodiment, it also includes an atmosphere isolation door and a vacuum isolation door;

[0126] The atmosphere isolation door is arranged between the equipment front-end module and the buffer cavity;

[0127] The vacuum isolation door is arranged between the buffer chamber and the transfer chamber, and between the transfer chamber and the reaction chamber.

[0128] In a specific embodiment, the equipment front-end module includes an equipment front-end body, a first transfer robot and a wafer box;

[0129] The equipment front end body is arranged close to the buffer cavity, and the first transfer robot is installed on the equipment front end body and is used to transfer the cooled wafers from the buffer cavity back to the wafer box;

[0130] The wafer box is arranged on a side of the front end body of the equipment away from the buffer cavity, and at least one wafer box is arranged;

[0131] A wafer box carrier is also provided at the lower part of the wafer box, and the wafer box carrier is used to receive the wafer box.

[0132] In a specific embodiment, the transfer chamber includes a transfer chamber body and a second transfer robot installed on the upper part of the transfer chamber body;

[0133] At least two second transfer robots are symmetrically arranged to transfer wafers between the reaction chamber and the buffer chamber.

[0134] In a specific embodiment, each of the reaction chambers includes at least two reaction chambers, all of which are arranged around the transfer chamber body, and the two reaction chambers can react simultaneously or individually.

[0135] In a specific embodiment, the second transfer robot includes a first arm and a second arm, and the first arm and the second arm respectively include a plurality of wafer picking fingers, so that the first arm or the second arm can pick up and place multiple wafers at a time.

[0136] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A wafer transfer device, characterized in that: include: Equipment front-end module (1), buffer chamber (2), transmission chamber (3) and reaction chamber (4); The equipment front-end module (1) is used to transmit back the cooled wafer under atmospheric conditions; The device front-end module (1) comprises a device front-end body (11), a first transfer robot (12) and a wafer box (14); the device front-end body (11) is arranged close to the buffer chamber (2), and the first transfer robot (12) is installed on the device front-end body (11) and is used to transfer the cooled wafers from the buffer chamber (2) back to the wafer box (14); the wafer box (14) is arranged on a side of the device front-end body (11) away from the buffer chamber (2); a wafer box carrier (13) is also arranged at the bottom of the wafer box (14), and the wafer box carrier (13) is used to receive the wafer box (14); The two buffer chambers (2) are arranged between the equipment front-end module (1) and the transfer chamber (3), and can be used independently for preheating, cooling and pre-cleaning wafers at the same time, and the buffer chamber comprises a buffer chamber body and an atmosphere isolation door (5) and a vacuum isolation door (6) connected to both sides of the buffer chamber body; The buffer cavity (2) is provided with a heating light source (201), a first card slot group (203), a second card slot group (204) and a cooling plate (202); the heating light source (201) is used to heat the wafer; the first card slot group (203) is arranged on the side wall of the buffer cavity (2) and is located under the heating light source (201), and is used to receive the wafer for heating; the second card slot group (204) is arranged at the lower part of the first card slot group (203), and is used to receive the wafer for cooling; the cooling plate (202) is arranged on the inner side of the buffer cavity (2) and is located on the side opposite to the second card slot group (204), and is used to cool the wafer on the second card slot group (204); The heating light source (201) is a disk-shaped structure, and the size of the heating light source (201) corresponds to the size of the wafer; a quartz window (205) is also provided on the side of the heating light source (201) facing the wafer to be heated; The first slot group (203) comprises two quartz slots (206) arranged on the inner side wall of the buffer cavity (2) in a relative manner, and the surface of the quartz slots (206) in contact with the wafer is provided with a first exhaust groove (207); the second slot group (204) comprises two aluminum slots arranged on the inner side wall of the buffer cavity (2) in a relative manner, the aluminum slots are located at the lower part of the quartz slots (206) and correspond to the position of the quartz slots (206) on the same side, and the surface of the aluminum slots in contact with the wafer is provided with a second exhaust groove The transfer chamber (3) is used to transfer the wafer from the buffer chamber (2) to the reaction chamber (4) under vacuum conditions, and to transfer the wafer to be cooled to the buffer chamber (2); A plurality of reaction chambers (4) are provided and arranged around the transfer chamber (3) for performing wafer reactions.

2. The wafer transfer device according to claim 1, characterized in that: The cooling plate (202) is an aluminum cooling plate, and a cooling channel (210), an inlet (211) and an outlet (212) are provided in the cooling plate (202), and a cooling liquid or a cooling gas flows in the cooling channel (210); A reflective component (213) is provided at one end of the cooling plate (202) close to the heating light source (201), and the reflective component (213) is located at the upper part of the first slot group (203); Wherein, the reflective component (213) is a reflective coating or a reflective baffle.

3. The wafer transfer device according to claim 1, characterized in that: The transfer chamber (3) comprises a transfer chamber body (31) and a second transfer robot (32) installed on the upper part of the transfer chamber body (31); At least two second transfer robots (32) are symmetrically arranged to transfer wafers between the reaction chamber (4) and the buffer chamber (2); The second transfer robot (32) comprises at least a first arm and a second arm, wherein the first arm and the second arm respectively comprise a plurality of wafer picking fingers (104) so ​​as to enable the first arm or the second arm to pick up and place multiple wafers at a time.

4. The wafer transfer device according to claim 3, characterized in that: Each of the reaction chambers (4) comprises at least two reaction chambers, all of which are arranged around the transfer chamber body (31), and the two reaction chambers can react simultaneously or individually.

5. A conveying method based on the wafer conveying equipment according to claim 3 or 4, characterized in that: The method comprises: Step S1, the transfer chamber (3) transfers the wafers in the reaction chamber to one of the buffer chambers (2), and transfers the new wafers in the buffer chamber (2) to the reaction chamber (4) for reaction; Step S2, adjusting the buffer chamber (2) from a vacuum state to an atmospheric state, and performing a cooling operation; Step S3, the equipment front-end module (1) returns the cooled wafer to the wafer box (14), and at the same time transfers the new wafer to the buffer chamber (2); Step S4, adjusting the buffer chamber (2) to be converted into a vacuum state, and preheating the wafers in the buffer chamber (2); After preheating to the first preset temperature, repeat steps S1 to S4; Wherein, the transmission cavity (3) and the equipment front-end module (1) work simultaneously.

6. The transmission method according to claim 5, characterized in that: Also includes: In step S101 executed simultaneously with step S1, the equipment front-end module (1) returns the cooled wafer in the other buffer chamber (2) to the wafer box (14), and transfers a new wafer to the buffer chamber (2); Step S102, which is performed simultaneously with step S2, is to adjust the buffer chamber (2) to be in a vacuum state, and to preheat the wafers in the buffer chamber (2); Step S103 executed simultaneously with step S3, the transfer chamber (3) transfers the preheated wafers in the buffer chamber (2) to the reaction chamber for reaction, and transfers the reacted wafers in the reaction chamber back to the buffer chamber (2); Step S104, performed simultaneously with step S4, adjusting the buffer chamber (2) from a vacuum state to an atmospheric state, and performing a cooling operation; After cooling to the second preset temperature, steps S101 to S104 are repeated.

7. The transmission method according to claim 6, characterized in that: in, The cooling operation in the buffer cavity (2) specifically includes: The second transfer robot (32) in the transfer chamber (3) transports the wafer to the second card slot group (204) in the buffer chamber (2), and cools the wafer through a cooling plate (202); The preheating of the wafer in the buffer chamber (2) specifically includes: The first transfer robot (12) of the equipment front-end module (1) transports the wafer to the first card slot group (203) in the buffer chamber (2), and at the same time the heating light source (201) is turned on to start irradiating and heating the wafer.

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