Semiconductor light emitting device and display device

Abstract

The semiconductor light emitting device includes: a light emitting portion; a first electrode located on the lower portion and the side portion of the light emitting portion; a second electrode located on the upper portion of the light emitting portion; a plurality of grooves located on the side portion of the light emitting portion; and a passivation layer located on the side portion of the light emitting portion, wherein an end of the passivation layer may be located in one of the plurality of grooves.

Description

Technical Field

[0001] The embodiments relate to a semiconductor light emitting device and a display apparatus. Background Art

[0002] Display devices use self-luminous devices such as light emitting diodes (LEDs) as light sources for pixels to display high-quality images. LEDs have excellent durability even in harsh environments and can achieve long life and high brightness, making them a popular light source for next-generation display devices.

[0003] In recent years, research has been conducted to manufacture ultra-small light-emitting diodes using highly reliable inorganic crystal structure materials and to arrange them in panels of display devices (hereinafter referred to as "display panels") to use them as next-generation light sources.

[0004] Such display devices go beyond flat panel displays and extend to various forms such as flexible displays, foldable displays, stretchable displays, and rollable displays.

[0005] In order to achieve high resolution, the size of pixels is gradually reduced, and since light-emitting devices need to be aligned in a large number of pixels at such a small size, research on manufacturing ultra-small light-emitting diodes at the micrometer or nanometer level is being actively conducted.

[0006] Generally, a display device includes tens of millions of pixels. Therefore, it is difficult to align at least one light emitting device in each of the tens of millions of pixels with a small size, and therefore, various studies on solutions for aligning a plurality of light emitting devices in a display panel are being actively conducted recently.

[0007] As the size of light-emitting devices decreases, it becomes a very important issue to quickly and accurately transfer these light-emitting devices to the substrate. Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method. In particular, the self-assembly method that uses magnetic bodies (or magnets) to transfer light-emitting devices to the substrate has attracted much attention recently.

[0008] In the self-assembly method, a large number of light-emitting devices are placed in a mold containing a fluid, and the light-emitting devices placed in the fluid are moved to the pixels of the substrate as the magnetic body moves, so that the light-emitting devices are aligned to each pixel. Therefore, the self-assembly method can quickly and accurately transfer a large number of light-emitting devices to the substrate, and it has attracted attention as a new-generation transfer method.

[0009] On the other hand, the light emitting device assembled on the substrate by self-assembly is electrically connected by thermocompression, that is, a bonding layer provided under the light emitting device is melted by thermocompression and electrically connected to the electrical wiring of the substrate.

[0010] However, there are the following problems when heat pressing the bonding layer of the conventional light emitting device.

[0011] Figure 1 The figure shows the morphology of bonding material flowing out from the periphery of the light-emitting device.

[0012] like Figure 1 As shown, when the light emitting device 4 is assembled into the assembly hole 3 and the light emitting device 4 is hot pressed, the bonding material 5 on the lower side of the light emitting device 4 flows out to the periphery of the light emitting device 4, and does not stay between the light emitting device 4 and the substrate 1. As described above, the bonding material 5 flows out to the periphery of the light emitting device 4, so that a part of the bonding material 5 forms a spire corresponding to the height of the light emitting device 4. Through subsequent processes, when the electrode wiring (not shown) is arranged on the upper side of the light emitting device 4, the electrode wiring is electrically in contact with the bonding material 5, resulting in a problem of electrical short circuit between the upper and lower parts of the light emitting device 5.

[0013] Figure 2 is a cross-sectional view showing a conventional light emitting device.

[0014] like Figure 2 As shown, a bonding material 5 is arranged on the lower side of the existing light emitting device. In the prior art, there is no structure to prevent the bonding material 5 from flowing out to the side during hot pressing.

[0015] Therefore, in Figure 2 The conventional light emitting device shown utilizes Figure 1 When the substrate 1 is hot pressed by the hot pressing method as shown, the bonding material 5 melted by the heat generated during the hot pressing process flows out to the periphery of the light emitting device 4 without staying under the light emitting device 4 .

[0016] Figure 3 The light emitting device is shown to be detached.

[0017] As described above, when the bonding material 5 flows out to the periphery of the light emitting device 4, there is almost no bonding material 5 between the light emitting device 4 and the substrate 1. Figure 3As shown, the light emitting device 4 will be detached without being attached to the substrate 1. That is, the light emitting device 5 is attached to the substrate 1 using the bonding substance 5. In order to make the light emitting device 5 strongly attached to the substrate 1, even under the heat pressing condition, a prescribed bonding substance 5 is required to be present on the lower side of the light emitting device 5. However, during the heat pressing, most of the bonding substance 5 provided on the lower side of the light emitting device 5 will flow out to the periphery of the light emitting device 5, and only a small amount of bonding substance 5 will remain on the lower side of the light emitting device 5. Therefore, the light emitting device 5 cannot be strongly attached to the substrate 1, and there is a problem that the light emitting device 5 is easily detached from the substrate 1. The detachment of the light emitting device 5 leads to a decrease in the assembly rate and causes poor assembly or poor lighting.

[0018] Figure 4 This shows that the electrical connection between the light emitting device and the electrical wiring of the substrate is poor.

[0019] like Figure 4 As shown in FIG. 1 , when the bonding material 5 flows out to the periphery of the light-emitting device 4 by heat pressing, there is almost no bonding material 5 remaining on the lower side of the light-emitting device 4 (see the X region), so that the light-emitting device 4 and the substrate 1 are poorly electrically connected via the bonding material 5. That is, the bonding material 5 is locally present rather than continuously between the light-emitting device 4 and the substrate 1, so the electrical connection between the light-emitting device 4 and the substrate 1 is also locally connected. This causes an increase in the resistance between the light-emitting device 4 and the substrate 1, resulting in a problem of reduced brightness because the electrical signal of the substrate 1 cannot be easily supplied to the light-emitting device 4. Summary of the invention

[0020] Problems to be solved by the invention

[0021] Embodiments are directed to solving the aforementioned problems and other problems.

[0022] Another object of the embodiment is to provide a semiconductor light emitting device capable of freely adjusting a formation position of a passivation layer.

[0023] Still another object of the embodiment is to provide a semiconductor light emitting device capable of easily forming a first electrode on a side portion of a light emitting portion.

[0024] Another object of the embodiment is to provide a semiconductor light emitting device with improved light extraction efficiency, thereby enabling a high-brightness display device.

[0025] Another object of the embodiment is to provide a display device capable of preventing bonding defects.

[0026] In addition, another object of the embodiment is to provide a display device capable of enhancing bonding force.

[0027] In addition, another object of the embodiment is to provide a display device capable of preventing assembly defects and lighting defects.

[0028] The technical problems of the embodiment are not limited to the contents described in this item, but include technical problems that can be grasped through the description of the invention.

[0029] Technical solutions to the problem

[0030] In order to achieve the above or other purposes, according to one aspect of the embodiment, a semiconductor light emitting device includes: a light emitting portion; a first electrode located on the lower portion and the side portion of the light emitting portion; a second electrode located on the upper portion of the light emitting portion; a plurality of grooves located on the side portion of the light emitting portion; and a passivation layer located on the side portion of the light emitting portion, and an end of the passivation layer may be located in one of the plurality of grooves.

[0031] The plurality of grooves may be arranged along an outer circumference of the side portion of the light emitting portion.

[0032] An end of the first electrode may be located in the one groove.

[0033] An end of the first electrode may be connected to the end of the passivation layer in the one groove.

[0034] An end of the first electrode may be located on the passivation layer.

[0035] Each of the plurality of grooves may have an asymmetric groove.

[0036] According to another aspect of the embodiment, a display device includes: a substrate; a first group of assembly lines and a second group of assembly lines, which are located on the substrate; a partition wall, which is arranged on the first group of assembly lines and the second group of assembly lines and has an assembly hole; a semiconductor light-emitting device, which is located in the assembly hole; and a connecting electrode, which is arranged in the assembly hole and connects the semiconductor light-emitting device to at least one of the first group of assembly lines and the second group of assembly lines, and the semiconductor light-emitting device includes: a light-emitting portion; a first electrode, which is located on the lower part and the side of the light-emitting portion; a second electrode, which is located on the upper part of the light-emitting portion; a plurality of grooves, which are located on the side of the light-emitting portion; and a passivation layer, which is located on the side of the light-emitting portion, and the end of the passivation layer is located in one of the plurality of grooves.

[0037] The connection electrode may be disposed in the assembly hole along the outer circumference of the semiconductor light emitting device.

[0038] The display device includes: an insulating layer on the partition wall; and an electrode wiring connected to the semiconductor light emitting device through the insulating layer.

[0039] Effects of the Invention

[0040] In an embodiment, Fig.11 As shown, grooves 1110, 1120, and 1130 that determine the formation position of the passivation layer 157 are arranged on the side of the semiconductor light-emitting device 150, and a first electrode 154 of a specified height is arranged on the side of the semiconductor light-emitting device 150, thereby improving the image quality by preventing uneven image quality between sub-pixels on the substrate 310 in the display device 300.

[0041] In the embodiment, the semiconductor light emitting device 150 may be connected to at least one of the first group assembly line 321 and the second group assembly line 322 using the connection electrode 350. That is, the first electrode 154 is arranged along the side periphery of the light emitting portion 151, 152, 153 of the semiconductor light emitting device 150, and the connection electrode 350 may be connected to the first electrode 154. Therefore, the connection electrode 350 is connected to the first electrode 154 along the side periphery of the light emitting portion 151, 152, 153 of the semiconductor light emitting device 150, so that the maximum brightness can be obtained by maximizing the contact area between the connection electrode 350 and the semiconductor light emitting device 150.

[0042] In addition, since the connecting electrode 350 is configured with uniform size in the assembly hole 345 of each of the multiple sub-pixels defined on the substrate 310, the contact area between the connecting electrode 350 and the semiconductor light-emitting device 150 is the same, thereby obtaining uniform brightness between the multiple sub-pixels, thereby improving the image quality.

[0043] In addition, since the semiconductor light emitting device 150 of each pixel is stably electrically connected to the connection electrode 350, lighting failure can be prevented.

[0044] In addition, the connecting electrode 350 is configured between the outer side surface of the semiconductor light-emitting device 150 and the inner side surface of the assembly hole 345 in the assembly hole 345, and the semiconductor light-emitting device 150 is firmly attached to the substrate 310 and / or the partition wall 340 using the connecting electrode 350, thereby preventing the semiconductor light-emitting device 150 from detaching.

[0045] Furthermore, the connection electrode 350 is formed only in the assembly hole 345 , so that an electrical short circuit between the connection electrode 350 and the electrode wiring 372 formed by a subsequent process can be prevented.

[0046] On the other hand, in an embodiment, Fig.13 As shown, light generated from the active layer 152 is reflected or scattered by the plurality of grooves, thereby extracting more light, thereby improving light extraction efficiency and further improving brightness.

[0047] In addition, if Fig.12As shown, a plurality of grooves 1110, 1120, and 1130 are arranged on the side of the semiconductor light-emitting device 150, and a first electrode 154 and a passivation layer 157 are arranged in the grooves 1110, 1120, and 1130, thereby increasing the contact area between the first electrode 154 and the passivation layer 157 and the side of the semiconductor light-emitting device 150, thereby preventing the first electrode 154 and the passivation layer 157 from detaching.

[0048] In addition, if Fig.11 As shown, the connecting electrode 350 is connected to the outer side surface of the semiconductor light-emitting device 150, at least one of the first group of assembly lines 321 and the second group of assembly lines 322, and the inner side surface of the assembly hole 345, thereby enhancing the reliability by strengthening the fixation of the semiconductor light-emitting device 150.

[0049] The additional scope to which the embodiment can be applied can become more clear through the following detailed description. However, those skilled in the art can clearly understand the various changes and modifications within the thought and scope of the embodiment, so it should be understood that the detailed description and specific embodiments such as the preferred embodiment are only exemplary. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 The figure shows the morphology of bonding material flowing out from the periphery of the light-emitting device.

[0051] Figure 2 is a cross-sectional view showing a conventional light emitting device.

[0052] Figure 3 The light emitting device is shown to be detached.

[0053] Figure 4 This shows that the electrical connection between the light emitting device and the electrical wiring of the substrate is poor.

[0054] Figure 5 The living room of a house in which the display device is arranged according to the embodiment is shown.

[0055] Figure 6 This is a block diagram schematically showing a display device according to the embodiment.

[0056] Figure 7 It is shown Figure 6 A circuit diagram of an example of a pixel.

[0057] Figure 8 yes Figure 5 An enlarged view of the first panel area in the display device.

[0058] Fig. 9 yes Figure 8 Magnified view of the A2 area.

[0059] Fig.10This is a diagram showing an example in which the light-emitting device according to the embodiment is assembled on a substrate by a self-assembly method.

[0060] Fig.11 is a cross-sectional view showing a display device according to the embodiment.

[0061] Fig.12 is a cross-sectional view showing the semiconductor light emitting device of the first embodiment.

[0062] Fig.13 The traveling path of light in the semiconductor light emitting device of the first embodiment is shown.

[0063] Fig.14 The lighting distribution of a display device having light-emitting devices electrically connected by a conventional bonding method is shown.

[0064] Fig.15 The lighting distribution of a display device having semiconductor light emitting devices electrically connected by the deposition method of the embodiment is shown.

[0065] Figures 16 to 29 The manufacturing process of the semiconductor light emitting device of the first embodiment is shown.

[0066] Fig.30 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment.

[0067] The dimensions, shapes, values, etc. of the components shown in the drawings may be different from the actual ones. In addition, even if the same components are shown in different dimensions, shapes, quantities, etc. between the drawings, this is only an example on the drawings, and the same components may have the same dimensions, shapes, values, etc. between the drawings. DETAILED DESCRIPTION

[0068] Below, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar constituent elements are given the same figure numbers and their descriptions are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of easy writing of the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0069] The display device described in this specification may include a TV, a light emitter, a mobile phone, a smart phone, a head-up display (HUD) for a vehicle, a backlight unit for a laptop computer, a display for VR or AR, etc. However, even in the form of a new product developed later, the configuration of the embodiments described in this specification can be applied to a device capable of displaying.

[0070] Hereinafter, a light emitting device according to an embodiment and a display device including the light emitting device will be described.

[0071] Figure 5 The living room of a house in which the display device according to the embodiment is installed is shown.

[0072] Reference Figure 5 The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT, and can also control each electronic product based on user setting data.

[0073] The display device 100 of the embodiment may include a flexible display manufactured on a thin and soft substrate. The flexible display maintains the characteristics of an existing flat panel display and can be bent or rolled like paper.

[0074] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels configured in a matrix form. A unit pixel refers to the smallest unit for realizing a color. The unit pixel of a flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED or a Nano-LED, but is not limited thereto.

[0075] Figure 6 is a block diagram schematically showing a display device of an embodiment, Figure 7 It is shown Figure 6 A circuit diagram of an example of a pixel.

[0076] Reference Figure 6 and Figure 7 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0077] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) mode or a passive matrix (PM) mode.

[0078] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0079] The display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular or oval shape. At least one side of the display panel 10 may be formed to be curved with a prescribed curvature.

[0080] The display panel 10 can be divided into a display area DA and a non-display area NDA arranged around the display area DA. The display area DA is an area where a plurality of pixels PX are formed to display an image. The display panel 10 may include a plurality of data lines D1 to Dm (m is an integer greater than 2), a plurality of scanning lines S1 to Sn (n is an integer greater than 2) intersecting the plurality of data lines D1 to Dm, a high potential voltage line VDDL supplied with a high potential voltage, a low potential voltage line VSSL supplied with a low potential voltage, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scanning lines S1 to Sn.

[0081] Each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first main wavelength, the second sub-pixel PX2 may emit a second color light of a second main wavelength, and the third sub-pixel PX3 may emit a third color light of a third main wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, Figure 6 It is illustrated that each of the plurality of pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0082] Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may be connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and a high potential voltage line VDDL. Figure 7 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0083] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting device LD and at least one capacitor Cst.

[0084] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but is not limited thereto.

[0085] The light emitting device LD may be one of a horizontal type light emitting device, a flip-chip type light emitting device, and a vertical type light emitting device.

[0086] like Figure 7 As shown, the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to the gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to the source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line VDDL to which a high potential voltage is applied; and a drain electrode connected to the plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include: a gate electrode connected to the scanning line Sk (k is an integer satisfying 1≤k≤n); a source electrode connected to the gate electrode of the driving transistor DT; and a drain electrode connected to the data line Dj (j is an integer satisfying 1≤j≤m).

[0087] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst stores a difference between a gate voltage and a source voltage of the driving transistor DT.

[0088] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 7 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the driving transistor DT and the scanning transistor ST being formed by a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by an N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the scanning transistor ST may be changed.

[0089] In addition, Figure 7In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0090] The second sub-pixel PX2 and the third sub-pixel PX3 may be represented by substantially the same circuit diagram as the first sub-pixel PX1 , and thus detailed description thereof will be omitted.

[0091] The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0092] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into a plurality of analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1Dm of the display panel 10.

[0093] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smart phone or a tablet PC, a display, a system-on-chip of a TV, etc.

[0094] The timing control unit 22 generates a plurality of control signals for controlling the operation time of the data driving unit 21 and the scan driving unit 30. The plurality of control signals may include a source control signal DCS for controlling the operation time of the data driving unit 21 and a scan control signal SCS for controlling the operation time of the scan driving unit 30.

[0095] The driving circuit 20 may be disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 is formed by an integrated circuit (IC) and may be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, but the present invention is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10.

[0096] The data driving unit 21 may be mounted on the display panel 10 by a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, and the timing control unit 22 may be mounted on a circuit board.

[0097] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0098] The circuit board can be attached to a plurality of pads disposed on one side edge of the display panel 10 using an anisotropic conductive film. Therefore, a plurality of leads of the circuit board can be electrically connected to the plurality of pads. The circuit board can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board can be bent toward the lower portion of the display panel 10. Therefore, one side of the circuit board can be attached to one side edge of the display panel 10, and the other side can be configured at the lower portion of the display panel 10, and can be connected to a system board on which a host system is installed.

[0099] The power supply circuit 50 may generate a plurality of voltages required for driving the display panel 10 from the main power applied from the system board and supply the voltages to the display panel 10. For example, the power supply circuit 50 may generate a high potential voltage VDD and a low potential voltage VSS for driving the plurality of light emitting devices LD of the display panel 10 from the main power, and supply the voltages to the high potential voltage line VDDL and the low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 generates and supplies a driving voltage for driving the driving circuit 20 and the scanning driving section 30 from the main power.

[0100] Figure 8 yes Figure 3 An enlarged view of the first panel area in the display device.

[0101] Reference Figure 8 In the display device 100 of the embodiment, a plurality of panel regions such as the first panel region A1 may be mechanically and electrically connected by tiling.

[0102] The first panel area A1 may include each unit pixel ( Figure 6 A plurality of light emitting devices 150 configured with PX).

[0103] For example, the unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For example, a plurality of red light-emitting devices 150R may be configured in the first sub-pixel PX1, a plurality of green light-emitting devices 150G may be configured in the second sub-pixel PX2, and a plurality of blue light-emitting devices 150B may be configured in the third sub-pixel PX3. The unit pixel PX may also include a fourth sub-pixel not configured with a light-emitting device, but is not limited thereto.

[0104] Fig. 9 yes Figure 8 Magnified view of the A2 area.

[0105] Reference Fig. 9 The display device 100 of the embodiment may include a substrate 200, assembly lines 201 and 202, an insulating layer 206, and a plurality of light emitting devices 150. More components may be included.

[0106] The group assembly line may include a first group assembly line 201 and a second group assembly line 202 that are spaced apart from each other. The first group assembly line 201 and the second group assembly line 202 may generate a dielectrophoretic force for assembling the light emitting device 150. For example, the light emitting device 150 may be one of a horizontal type light emitting device, a flip-chip type light emitting device, and a vertical type light emitting device.

[0107] In order to realize each unit pixel (sub-pixel), the light emitting device 150 may include a red light emitting device 150, a green light emitting device 150G and a blue light emitting device 150B0, but is not limited thereto and may also have a red phosphor and a green phosphor, etc., to realize red and green respectively.

[0108] The substrate 200 may be a supporting member that supports components disposed on the substrate 200 or a protecting member that protects the components.

[0109] The substrate 200 may be a rigid substrate or a flexible substrate. The substrate 200 may be formed of sapphire, glass, silicon or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 200 may be a transparent material, but is not limited thereto.

[0110] The substrate 200 may be Figure 4 and Figure 5 Although a backplane of circuits such as transistors ST, DT, capacitor Cst, and signal wiring is provided in the sub-pixels PX1, PX2, and PX3, the present invention is not limited thereto.

[0111] The insulating layer 206 may include an organic material having insulation and flexibility such as polyimide, PAC, PEN, PET, polymer, or an inorganic material such as silicon oxide (SiO2) or silicon nitride series (SiNx), and may also be formed integrally with the substrate 200 to form a single substrate.

[0112] The insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, thereby realizing the flexible function of the display device. For example, the insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0113] The insulating layer 206 may include an assembly hole 203 for inserting the light emitting device 150. Therefore, during self-assembly, the light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, or the like.

[0114] The assembly hole 203 may be different according to the shape of the light emitting device 150. For example, the red light emitting device, the green light emitting device, and the blue light emitting device may have different shapes, respectively, and may include an assembly hole 203 having a shape corresponding to the shape of each of these light emitting devices. For example, the assembly hole 203 may include a first assembly hole for assembling a red light emitting device, a second assembly hole for assembling a green light emitting device, and a third assembly hole for assembling a blue light emitting device. For example, the red light emitting device may have a circular shape, the green light emitting device may have a first elliptical shape including a first short axis and a second long axis, and the blue light emitting device may have a second elliptical shape including a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue light emitting device may be greater than the second long axis of the ellipse of the green light emitting device, and the second short axis of the ellipse of the blue light emitting device may be smaller than the first short axis of the ellipse of the green light emitting device.

[0115] Fig.10 This is a diagram showing an example in which the light-emitting device according to the embodiment is assembled on a substrate by a self-assembly method.

[0116] Reference Fig. 9 and Fig.10 , illustrating the self-assembly method of light-emitting devices.

[0117] The substrate 200 may be a panel substrate of a display device. In the following description, the substrate 200 is described as a panel substrate of a display device, but the embodiment is not limited thereto.

[0118] The substrate 200 may be formed of glass or polyimide. In addition, the substrate 200 may include a flexible material, such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 200 may be a transparent material, but is not limited thereto.

[0119] Reference Fig.10 , the light emitting device 150 can be put into a chamber 1300 filled with a fluid 1200. The fluid 1200 can be water such as ultrapure water, but is not limited thereto. The chamber can be called a water tank, a container, a vessel, etc.

[0120] Next, the substrate 200 may be disposed on the chamber 1300. According to an embodiment, the substrate 200 may also be loaded into the chamber 1300.

[0121] like Fig. 9 As shown, a pair of assembly lines 201 and 202 corresponding to the light emitting devices 150 to be assembled may be arranged on the substrate 200 .

[0122] The assembly wires 201 and 202 may be formed of transparent electrode ITO, or may include a metal substance with excellent conductivity. For example, the assembly wires 201 and 202 may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0123] The assembly lines 201 and 202 may form an electric field by a voltage supplied from the outside, and a dielectrophoretic force may be formed between the assembly lines 201 and 202 by the electric field. The light emitting device 150 may be fixed to the assembly hole 203 on the substrate 200 by the dielectrophoretic force.

[0124] The interval between the assembly lines 201 and 202 is formed to be smaller than the width of the light emitting device 150 and the width of the assembly hole 203, so that the assembly position of the light emitting device 150 using an electric field can be fixed more accurately.

[0125] An insulating layer 206 is formed on the assembly wires 201 and 202 to protect the assembly wires 201 and 202 from the fluid 1200 and prevent leakage of current flowing in the assembly wires 201 and 202. The insulating layer 206 can be formed of an inorganic insulator such as silicon dioxide or aluminum oxide or an organic insulator in a single layer or multiple layers.

[0126] In addition, the insulating layer 206 may include a material with insulation and flexibility, such as polyimide, PEN, PET, etc., and may also be formed integrally with the substrate 200 to form a single substrate.

[0127] The insulating layer 206 may be an insulating layer having adhesiveness or a conductive adhesive layer having conductivity. The insulating layer 206 has flexibility, so as to realize the flexible function of the display device.

[0128] The insulating layer 206 may have a partition wall, and the assembly hole 203 is formed by the partition wall. For example, when forming the substrate 200, a portion of the insulating layer 206 is removed so that each of the plurality of light emitting devices 150 can be assembled to the assembly hole 203 of the insulating layer 206.

[0129] The substrate 200 is formed with an assembly hole 203 for combining a plurality of light emitting devices 150 , and the surface formed with the assembly hole 203 may contact the fluid 1200 . The assembly hole 203 may guide the accurate assembly position of the light emitting device 150 .

[0130] On the other hand, the assembly hole 203 may have a shape and size corresponding to the shape of the light emitting device 150 assembled to the corresponding position, thereby preventing other light emitting devices or a plurality of light emitting devices from being assembled to the assembly hole 203 .

[0131] Refer again Fig.10 , after configuring the substrate 200, the assembly device 1100 including the magnetic body can be moved along the substrate 200. As the magnetic body, for example, a magnet or an electromagnet can be used. In order to maximize the area affected by the magnetic field in the fluid 1200, the assembly device 1100 can move in a state of contact with the substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body of a size corresponding to the substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0132] The light emitting device 150 within the chamber 1300 may move toward the assembling apparatus 1100 using the magnetic field generated by the assembling apparatus 1100 .

[0133] The light emitting device 150 may enter the assembly hole 203 and contact the substrate 200 while moving toward the assembly device 1100 .

[0134] At this time, the light emitting device 150 in contact with the substrate 200 may be prevented from being detached due to the movement of the assembling apparatus 1100 by the electric field applied by the assembly lines 201 and 202 formed on the substrate 200 .

[0135] That is, by utilizing the electromagnetic field self-assembly method, the time required to assemble each of the plurality of light emitting devices 150 to the substrate 200 can be greatly shortened, thereby realizing a large-area high-pixel display more quickly and economically.

[0136] A predetermined solder layer (not shown) is further formed between the light emitting device 150 assembled on the assembly hole 203 of the substrate 200 and the substrate 200 , thereby improving the bonding force of the light emitting device 150 .

[0137] Next, electrode wiring (not shown) is connected to the light emitting device 150, and power may be applied.

[0138] Then, although not shown in the figure, at least one insulating layer may be formed through a subsequent process. The at least one insulating layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0139] On the other hand, in the embodiment, by configuring a groove capable of determining the formation position of the passivation layer on the side of the semiconductor light-emitting device, the end of the passivation layer is configured to the groove, so that the first electrode of a specified height can be configured on the side of the semiconductor light-emitting device. Therefore, by connecting the connecting electrode with a uniform area and the first electrode of the semiconductor light-emitting device configured in the assembly hole of each of the plurality of sub-pixels, the image quality can be improved by ensuring uniform brightness between each of the plurality of sub-pixels. In addition, the embodiment can have a variety of technical advantages, and the various technical advantages are described in detail below.

[0140] The following omitted instructions can be Figures 5 to 10 The above description related to the accompanying drawings can be easily understood.

[0141] Fig.11 is a cross-sectional view showing a display device according to the embodiment.

[0142] Reference Fig.11 , the display device 300 of the embodiment may include a substrate 310, a first group assembly line 321, a second group assembly line 322, a partition wall 340, a semiconductor light emitting device 150, and a connection electrode 350. The display device 300 of the first embodiment may include more constituent elements than this.

[0143] The substrate 310 and the partition wall 340 are respectively Fig. 9 The substrate 200 and the insulating layer 206 shown are the same, so detailed description is omitted.

[0144] The partition wall 340 may be disposed on the substrate 310. For example, the partition wall 340 may be disposed on the first group of assembly lines 321 and the second group of assembly lines 322. The partition wall 340 may be referred to as an insulating layer. The partition wall 340 may have a plurality of assembly holes 345. The assembly holes 345 may be provided in sub-pixels of a pixel, but are not limited thereto. The assembly holes 345 are used to guide and fix the assembly of the semiconductor light emitting device 150. During self-assembly, the semiconductor light emitting device 150 moved by the magnetic body moves near the assembly hole 345 into the assembly hole 345 and may be fixed to the assembly hole 345.

[0145] The figure shows that the assembly hole 345 has an inclined inner side surface, but it may also have an inner side surface perpendicular to the top surface of the substrate 310. Due to the assembly hole 345 having the inclined inner side surface, the semiconductor light emitting device can be easily inserted into the assembly hole 345.

[0146] The first group of assembly lines 321 and the second group of assembly lines 322 may be disposed on the substrate 310. The first group of assembly lines 321 and the second group of assembly lines 322 may be provided to assemble the light emitting device 150 in order to generate a dielectrophoretic force.

[0147] The first assembly line 321 and the second assembly line 322 are respectively Fig. 9 The electrode wirings 201 and 202 shown are the same, and therefore detailed descriptions thereof are omitted.

[0148] On the other hand, the first insulating layer 330 may be disposed on the substrate 310. The first group of assembly lines 321 and the second group of assembly lines 322 may be disposed between the first insulating layer 330 and the substrate 310. The first group of assembly lines 321 and the second group of assembly lines 322 may be disposed on the same layer, for example, on the substrate 310. That is, the first group of assembly lines 321 and the second group of assembly lines 322 may be in contact with the top surface of the substrate 310. In order to prevent an electrical short circuit, the first group of assembly lines 321 and the second group of assembly lines 322 may be separated from each other. An alternating current voltage is applied to the first group of assembly lines 321 and the second group of assembly lines 322, so that a dielectrophoretic force may be formed between the first group of assembly lines 321 and the second group of assembly lines 322. Due to the dielectrophoretic force, the semiconductor light emitting device 150 located in the assembly hole 345 may be fixed. The first assembly line 321 and the second assembly line 322 are arranged horizontally and in parallel on the same layer, so the dielectrophoretic force formed between the first assembly line 321 and the second assembly line 322 is uniform, so that the semiconductor light emitting device 150 can be accurately positioned at the center of the assembly hole 345.

[0149] The first insulating layer 330 protects the first group of assembly wires 321 and the second group of assembly wires 322 from the fluid ( Fig. 9 1200), thereby preventing leakage current flowing in the first group of assembly lines 321 and the second group of assembly lines 322.

[0150] The first insulating layer 330 may increase the dielectrophoretic force. For example, the first insulating layer 330 may be a dielectric layer. The first insulating layer 330 may be formed of a material with a high dielectric constant. The dielectrophoretic force may be proportional to the dielectric constant of the first insulating layer 330. Therefore, the dielectrophoretic force formed between the first group of assembly lines 321 and the second group of assembly lines 322 is increased by the first insulating layer 330 formed of a material with a high dielectric constant, whereby the semiconductor light emitting device 150 located in the assembly hole 345 may be more firmly fixed by the dielectrophoretic force increased as described above.

[0151] For example, the first insulating layer 330 may be formed of a single layer or a plurality of layers of an inorganic substance such as silicon oxide or aluminum oxide, or an organic substance.

[0152] For example, the first insulating layer 330 may include a material having insulation and flexibility, such as polyimide, PEN, PET, etc. For example, the first insulating layer 330 may also be integrally formed with the substrate 310 to form a single substrate. That is, the first group of assembly lines 321 and the second group of assembly lines 322 may be buried in the substrate 310.

[0153] The first insulating layer 330 may be an insulating layer with adhesiveness or a conductive adhesive layer with conductivity. In the case where the first insulating layer 330 is a conductive adhesive layer, the first assembly line 321 and the second assembly line 322 are surrounded by the insulating layer, thereby preventing an electrical short circuit between the first assembly line 321 and the second assembly line 322 and the conductive adhesive layer. For example, the first insulating layer 330 has flexibility, thereby realizing the flexible function of the display device 300.

[0154] The semiconductor light emitting device 150 may be disposed in each of the plurality of assembly holes 345 provided on the substrate 310 .

[0155] The semiconductor light emitting device 150 may be formed of a semiconductor substance, such as a Group IV compound or a Group III-V compound. The semiconductor light emitting device 150 is a member that generates light according to an electrical signal.

[0156] As an example, the semiconductor light emitting device 150 disposed in each assembly hole 345 can generate a single color light. For example, the semiconductor light emitting device 150 can generate ultraviolet light, purple light, blue light, etc. In this case, the semiconductor light emitting device 150 disposed in each assembly hole 345 is used as a light source, and various color lights can be generated by the light source to display an image. In order to generate various color lights, a color conversion layer and a color filter can be provided.

[0157] As another example, the semiconductor light emitting device 150 disposed in each assembly hole 345 may be one of a blue semiconductor light emitting device, a green semiconductor light emitting device, and a red semiconductor light emitting device. For example, when three assembly holes 345 are arranged side by side, the semiconductor light emitting device 150 disposed in the first assembly hole 345 may be a blue semiconductor light emitting device, the semiconductor light emitting device 150 disposed in the second assembly hole 345 may be a green semiconductor light emitting device, and the semiconductor light emitting device 150 disposed in the third assembly hole 345 may be a red semiconductor light emitting device.

[0158] The connection electrode 350 may be disposed in the assembly hole 345. The connection electrode 350 may be referred to as a connection portion, a connection member, a connection metal, or the like.

[0159] The connection electrode 350 may connect the semiconductor light emitting device 150 to at least one of the first assembly line 321 and the second assembly line 322. The connection electrode 350 may be formed of a metal having excellent electrical conductivity. The connection electrode 350 may be formed of at least one layer. For example, the connection electrode 350 may be formed of three layers of molybdenum / aluminum / molybdenum (Mo / Al / Mo), but is not limited thereto.

[0160] For example, the connection electrode 350 may be disposed along the periphery of the side of the semiconductor light emitting device 150 in the assembly hole 345. For example, the connection electrode 350 may be electrically connected to the side of the semiconductor light emitting device along the periphery of the side of the semiconductor light emitting device 150 in the assembly hole 345.

[0161] like Figures 1 to 4 As shown, when the bonding method is thermally pressed, the bonding material 5 disposed under the light emitting device 4 is attached to the substrate 1 by pressure.

[0162] However, the bonding material 5 on the lower side of the light emitting device 4 flows out to the periphery of the light emitting device 4 without staying between the light emitting device 4 and the substrate 1, and an electrical short circuit occurs between the bonding material 5 flowing out to the periphery and the electrode wiring formed in the subsequent process ( Figure 1 ). In addition, since the light emitting device 4 is not firmly fixed to the substrate 1, the light emitting device 4 is detached ( Figure 3 In addition, the bonding material 5 on the lower side of the light-emitting device 4 flows out to the periphery of the light-emitting device 4 without staying, so that the amount of bonding material 5 remaining between the light-emitting device 4 and the substrate 1 is small, so that the electrical contact area between the light-emitting device 4 and the electrode wiring of the substrate 1 is small, and the contact resistance increases, resulting in a decrease in brightness ( Figure 4 ).

[0163] The first embodiment is used to solve this problem and can have the following technical advantages.

[0164] According to the first embodiment, the connecting electrode 350 is configured between the outer side surface of the semiconductor light-emitting device 150 and the inner side surface of the assembly hole 345 in the assembly hole 345, and the semiconductor light-emitting device 150 is firmly attached to the substrate 310 and / or the partition wall 340 using the connecting electrode 350, thereby preventing the semiconductor light-emitting device 150 from detaching.

[0165] According to the first embodiment, the connection electrode 350 is formed only in the assembly hole 345 , and thus an electrical short circuit between the connection electrode 350 and the electrode wiring 372 formed by a subsequent process can be prevented.

[0166] According to the first embodiment, the connection electrode 350 is electrically connected to the side of the semiconductor light emitting device 150 along the periphery of the side of the semiconductor light emitting device 150 , so that the maximum brightness can be obtained by maximizing the contact area between the connection electrode 350 and the semiconductor light emitting device 150 .

[0167] According to the first embodiment, since the connecting electrode 350 is configured with uniform size in the assembly hole 345 of each of the plurality of sub-pixels defined on the substrate 310, the contact area between the connecting electrode 350 and the semiconductor light-emitting device 150 is the same, thereby improving the image quality by ensuring uniform brightness between the plurality of sub-pixels.

[0168] According to the first embodiment, since the semiconductor light emitting device 150 of each pixel is stably electrically connected to the connection electrode 350, lighting failure can be prevented.

[0169] like Fig.14 As described above, it can be seen that the light emitting device 4 is based on the existing ( Figure 1 , Figure 3 as well as Figure 4 ) is attached to the substrate 1 by thermal compression, the light-emitting devices 4 of the plurality of sub-pixels are either lit or not lit, thereby reducing the lighting rate.

[0170] like Fig.15 As shown, it can be seen that when the semiconductor light emitting device 150 is attached to the substrate 310 by the deposition method according to the first embodiment, the semiconductor light emitting devices 150 of a plurality of sub-pixels are lit, so that the lighting rate is significantly improved.

[0171] On the other hand, the semiconductor light emitting device 150 may be disposed in the assembly hole 345. The semiconductor light emitting device 150 of the embodiment may be configured with a plurality of grooves 1110, 1120, 1130 on its side. One groove among the plurality of grooves, for example, the first groove 1110 may determine the formation position of the passivation layer 157. That is, the end of the passivation layer 157 may be located in the first groove 1110.

[0172] [First embodiment]

[0173] Fig.12 is a cross-sectional view showing the semiconductor light emitting device of the first embodiment.

[0174] Reference Fig.12 , the semiconductor light emitting device 150 of the first embodiment may include light emitting portions 151, 152, 153, a first electrode 154, a second electrode 155, grooves 1110, 1120, 1130, and a passivation layer 157. The semiconductor light emitting device 150 of the first embodiment may include more constituent elements than this. The passivation layer 157 may be referred to as an insulating layer, a protective layer, etc.

[0175] The light emitting portion may include a first conductive type semiconductor layer 151 , an active layer 152 , and a second conductive type semiconductor layer 153 . That is, the active layer 152 may be disposed on the first conductive type semiconductor layer 151 , and the second conductive type semiconductor layer 153 may be disposed on the active layer 152 .

[0176] The first conductive semiconductor layer 151, the active layer 152 and the second conductive semiconductor layer 153 can be deposited on a wafer ( Fig.16401) are grown sequentially. Then, the second conductive semiconductor layer 153, the active layer 152, and the first conductive semiconductor layer 151 can be etched in the vertical direction in the order of etching process. Then, the passivation layer 157 is formed along the remaining area except a part of the side surface of the first conductive semiconductor layer 151, that is, another part of the side surface of the first conductive semiconductor layer 151, the side surface of the active layer 152, and the outer periphery of the side surface of the second conductive semiconductor layer 153, thereby the semiconductor light emitting device 150 can be manufactured.

[0177] The first conductive type semiconductor layer 151 may include a first conductive type dopant, and the second conductive type semiconductor layer 153 may include a second conductive type dopant. For example, the first conductive type dopant may be an n-type dopant such as silicon (Si), and the second conductive type dopant may be a p-type dopant such as boron (B).

[0178] For example, the first conductive type semiconductor layer 151 may be a site where electrons are generated, and the second conductive type semiconductor layer 153 may be a site where holes are formed. The active layer 152 may be a site where light is generated, and is referred to as a light emitting layer.

[0179] The first electrode 154 may be disposed on the lower portion of the light emitting portion 151, 152, 153. The first electrode 154 may be disposed on the side portion of the light emitting portion 151, 152, 153. The second electrode 155 may be disposed on the upper portion of the light emitting portion 151, 152, 153. The first electrode 154 and the second electrode 155 supply current to the light emitting portion 151, 152, 153, so that light having a brightness corresponding to the current may be emitted from the light emitting portion 151, 152, 153.

[0180] The first electrode 154 and the second electrode 155 may be formed of a metal having excellent conductivity. The first electrode 154 and the second electrode 155 may be formed of at least one layer. The first electrode 154 and the second electrode 155 may be formed of different metals, but are not limited thereto.

[0181] For example, at least one of the first electrode 154 and the second electrode 155 may include a magnetic layer. Fig.10 As shown, when the magnetic body of the assembly device 1100 is magnetized, the magnetic body of the assembly device 1100 exerts an attractive force, so that the semiconductor light emitting device 150 including the magnetic layer can move toward the magnetic body. Therefore, the semiconductor light emitting device 150 can move along the moving direction of the magnetic body of the assembly device 1100. As described above, the semiconductor light emitting device 150 in motion is pulled by the dielectrophoretic force formed by the assembly hole 345 on the substrate 310, so that it can be assembled to the assembly hole 345.

[0182] On the other hand, the first electrode 154 may include a reflective layer. In this case, light generated from the active layer 152 is reflected, thereby improving light extraction efficiency, and thus brightness may be improved.

[0183] The passivation layer 157 may be disposed on the side of the light emitting portion 151, 152, 153. The passivation layer 157 may be disposed on the upper portion of the light emitting portion 151, 152, 153. The passivation layer 157 may be disposed on the second electrode 155 of the light emitting portion 151, 152, 153.

[0184] For example, the passivation layer 157 may protect the light emitting parts 151 , 152 , and 153 .

[0185] For example, the passivation layer 157 can block leakage current of the light emitting portions 151, 152, and 153. The leakage current can flow through the side surfaces of the light emitting portions 151, 152, and 153, that is, the side surfaces of the first conductive semiconductor layer 151, the side surfaces of the active layer 152, and the side surfaces of the second conductive semiconductor layer 153. The passivation layer 157 is formed on the side surfaces of the first conductive semiconductor layer 151, the side surfaces of the active layer 152, and the side surfaces of the second conductive semiconductor layer 153, thereby preventing leakage current.

[0186] For example, the passivation layer 157 can help assemble the semiconductor light emitting device 150. That is, by adjusting the configuration area of ​​the first electrode 154 and the passivation layer 157 configured on the outer side of the semiconductor light emitting device 150, the semiconductor light emitting device 150 can be pulled into the assembly hole 345 by using the dielectrophoretic force formed between the first group of assembly lines 321 and the second group of assembly lines 322. For example, the first electrode 154 of the semiconductor light emitting device 150 is configured to be close to the first group of assembly lines 321 and the second group of assembly lines 322, and the passivation layer 157 is away from the first group of assembly lines 321 and the second group of assembly lines 322, thereby using the dielectrophoretic force to pull the semiconductor light emitting device 150 into the assembly hole 345. Therefore, due to the dielectrophoretic force, the semiconductor light emitting device 150 is continuously fixed in the assembly hole 345 after being pulled into the assembly hole 345. Then, even if the dielectrophoretic force is not generated, the semiconductor light emitting device 150 can still be fixed in the assembly hole 345 due to natural forces such as surface tension or van der Waals force.

[0187] For example, an opening 158 without the passivation layer 157 may be formed in a portion of the second electrode 155 of the light emitting portion 151, 152, 153. As will be described later, the electrode wiring 372 may pass through the opening 158 and be electrically connected to the second electrode 155 of the semiconductor light emitting device 150.

[0188] On the other hand, the passivation layer 157 may be formed on a portion of the side of the light emitting portion 151, 152, 153. That is, the passivation layer 157 may be disposed on one region of the side of the light emitting portion 151, 152, 153, and the first electrode 154 may be disposed on another region of the side of the light emitting portion 151, 152, 153.

[0189] The first electrode 154 is formed on the side of the light emitting portion 151, 152, 153 to facilitate electrical connection with the connection electrode 350. The larger the area where the first electrode 154 is formed on the side of the light emitting portion 151, 152, 153, the larger the contact area between the connection electrode 350 and the first electrode 154 can be. In this case, the current flows more smoothly to the light emitting portion 151, 152, 153, thereby outputting a larger amount of light, which means that the brightness is improved.

[0190] Since the first electrode 154 is formed after the passivation layer 157 is formed, the passivation layer 157 must be confined to a region on the side of the light-emitting portion 151, 152, 153 so that the first electrode 154 can be easily confined to another region on the side of the light-emitting portion 151, 152, 153. However, in the manufacturing process, it is difficult to confine the passivation layer 157 to a region on the side of the light-emitting portion 151, 152, 153. Therefore, it is difficult to confine the first electrode 154 to another region on the side of the light-emitting portion 151, 152, 153.

[0191] In an embodiment, by forming a plurality of grooves in the light-emitting portions 151 , 152 , 153 , the passivation layer 157 can be easily confined to one area of ​​the light-emitting portions 151 , 152 , 153 using the plurality of grooves, thereby the first electrode 154 can also be easily confined to another area of ​​the light-emitting portions 151 , 152 , 153 .

[0192] Therefore, the plurality of grooves may function as a stopper for localizing the formation of the passivation layer 157 in a region of the side of the light emitting portions 151 , 152 , and 153 .

[0193] For example, with one of the plurality of grooves formed in the light emitting parts 151, 152, 153, for example, the first groove 1110, as a reference, the end 157a of the passivation layer 157 may be located in the first groove 1110. That is, the passivation layer 157 is formed on the upper portion and the side portion of the light emitting parts 151, 152, 153, and may be located in the first groove 1110 provided on the side portion of the light emitting parts 151, 152, 153. Therefore, the passivation layer 157 may not be formed on the side portion of the light emitting parts 151, 152, 153 located below the first groove 1110. The first electrode 154 may be formed on the side portion of the light emitting parts 151, 152, 153 located below the first groove 1110.

[0194] Thus, the first trench 1110 may be a boundary region between the passivation layer 157 and the first electrode 154. That is, in the first trench 1110, an end 157a of the passivation layer and an end 154a of the first electrode 154 may meet.

[0195] For example, the plurality of grooves may be arranged along the periphery of the side of the light emitting portions 151, 152, 153, but the present invention is not limited thereto. Therefore, in the first groove 1110 arranged along the periphery of the side of the light emitting portions 151, 152, 153, the end 157a of the passivation layer 157 and the end 154a of the first electrode 154 may be in contact with each other. That is, with the first groove 1110 as a reference, the passivation layer 157 may be arranged along the periphery of the side of the light emitting portions 151, 152, 153 located above the first groove 1110, and the first electrode 154 may be arranged along the periphery of the side of the light emitting portions 151, 152, 153 located below the first groove 1110.

[0196] Each of the plurality of grooves may have an asymmetric groove 1200. For example, each of the plurality of grooves may have a bottom 151a having a first width w1 and a side 151b connected to the bottom 151a having a second width w2 greater than the first width. Due to such an asymmetric groove 1200, the blunted end 157a may be easily located in the plurality of grooves, namely the first groove 1110.

[0197] This will be explained later (see Figure 23 to Figure 27 ), even if the passivation layer 157 is formed on the side surfaces of the light-emitting parts 151, 152, and 153 due to the asymmetric groove 1200 of the first groove 1110, the passivation layer 157 located above the first groove 1110 and the passivation layer 157 located below the first groove 1110, that is, the passivation layer ( Fig.23 In this case, the passivation layer 157 located below the first trench 1110 may be removed, so that only the passivation layer 157 located above the first trench 1110 may be configured on the side of the light emitting portions 151, 152, 153.

[0198] On the other hand, the angle θ between the bottom 151a and the side 151b may be an acute angle, but is not limited thereto. The acute angle θ between the bottom 151a and the side 151b means that the depth of each of the plurality of grooves is further deepened. As described above, as the depth of each of the plurality of grooves is further deepened, as Fig.23 and Fig.24As shown, with the first trench 1110 as a reference, the passivation layer 157 located above the first trench 1110 and the passivation layer 157 located below the first trench 1110 can be more easily separated, so that the passivation layer 157 located below the first trench 1110 can be easily removed.

[0199] On the other hand, the plurality of trenches prevent the passivation layer 157 from being formed on the side of the first conductive semiconductor layer 151 as much as possible, thereby making it easy to form the first electrode 154 on the side of the first conductive semiconductor layer 151. Therefore, the plurality of trenches can be arranged on the side of the first conductive semiconductor layer 151.

[0200] For example, the plurality of trenches may include a first trench 1110 disposed on a first region of a side portion of the first conductive semiconductor layer 151. For example, the plurality of trenches may include at least one second trench 1120 disposed on a second region of a side portion of the first conductive semiconductor layer 151. The second region may be located above the first region. For example, the plurality of trenches may include at least one third trench 1130 disposed on a third region of a side portion of the first conductive semiconductor layer 151. The third region may be located below the first region.

[0201] For example, the end 157 a of the passivation layer 157 may be located in the first trench 1110 . For example, the end 154 a of the first electrode 154 may meet the end 157 a of the passivation layer 157 in the first trench 1110 .

[0202] For example, the passivation layer 157 may be disposed in at least one second trench 1120. The passivation layer 157 is disposed in the asymmetric recess 1200 of the second trench 1120, thereby increasing the contact area between the passivation layer 157 and the side of the first conductive type semiconductor layer 151, thereby preventing the passivation layer 157 from being separated.

[0203] For example, the first electrode 154 may be disposed in at least one third trench 1130. The first electrode 154 is disposed in the asymmetric groove 1200 of the third trench 1130, thereby increasing the contact area between the second electrode 155 and the side of the first conductive semiconductor layer 151, thereby enhancing the bonding force of the first electrode 154 and preventing the first electrode 154 from being separated.

[0204] On the other hand, Fig.13 As shown, light generated from the active layer 152 is reflected or scattered by the plurality of grooves, thereby extracting more light, thereby improving light extraction efficiency and further improving brightness.

[0205] On the other hand, referring again Fig.11 and Fig.12, the connection electrode 350 may be connected to the first electrode 154 of the semiconductor light emitting device 150. That is, the connection electrode 350 may be connected to the first electrode 154 to be configured on the side of the semiconductor light emitting device 150. For example, the connection electrode 350 may be configured on the side of the first conductive type semiconductor light emitting device 150 of the semiconductor light emitting device 150. In addition, the connection electrode 350 may be connected to at least one of the first group assembly line 321 and the second group assembly line 322. Therefore, the connection electrode may connect the first electrode 154 of the semiconductor light emitting device 150 to at least one of the first group assembly line 321 and the second group assembly line 322.

[0206] The connection electrode 350 contacts the passivation layer 157 of the semiconductor light emitting device 150 and the inner side surface of the assembly hole 345 in the assembly hole 345 , thereby enhancing the adhesion of the connection electrode 350 , thereby preventing the connection electrode 350 from being detached.

[0207] Since the passivation layer 157 is thin, the upper side of the connection electrode 350 can be located at a lower position than the active layer 152 and configured on the side of the first conductive semiconductor layer 151 to prevent an electrical short circuit between the connection electrode 350 and the active layer 152 through the passivation layer 157.

[0208] For example, the upper side of the connection electrode 350 disposed on the inner side of the assembly hole 345 and the upper side of the connection electrode 350 disposed on the side of the semiconductor light emitting device 150 may be located at the same position (or height), but is not limited thereto.

[0209] On the other hand, the electrode wiring 372 may be connected to the second electrode 155 of the semiconductor light emitting device 150. At least one of the first and second assembly lines 321 and 322 may be named as a first electrode 154 wiring, and the electrode wiring 372 may be named as a second electrode 155 wiring. In this case, due to at least one of the first and second assembly lines 321 and 322 and the assembly line 372, current may flow in the semiconductor light emitting device 150, and light having brightness corresponding to the current is emitted from the semiconductor light emitting device 150.

[0210] The display device 300 of the first embodiment may include a second insulating layer 360 .

[0211] The second insulating layer 360 may be formed of an organic substance or an inorganic substance. For example, the second insulating layer 360 may be disposed on the semiconductor light emitting device 150 and the partition wall 340. The second insulating layer 360 may be disposed in the assembly hole 345. For example, the second insulating layer 360 may be disposed in a groove formed by the connection electrode 350 in the assembly hole 345.

[0212] For example, a portion of the second insulating layer 360 is removed to form a contact hole through which the second electrode 155 of the semiconductor light emitting device 150 is exposed. The electrode wiring 372 may be electrically connected to the second electrode 155 of the semiconductor light emitting device 150 through the contact hole.

[0213] On the other hand, unexplained symbol 333 is an adhesive layer that may attach the semiconductor light emitting device 150 to the first insulating layer 330 within the assembly hole 345 .

[0214] Below, refer to Figures 16 to 29 , describing the manufacturing process of the semiconductor light emitting device 150 of the first embodiment.

[0215] Figures 16 to 29 The manufacturing process of the semiconductor light emitting device of the first embodiment is shown.

[0216] like Fig.16 As shown, the first conductive semiconductor layer 151 , the active layer 152 , and the second conductive semiconductor layer 153 can be grown on the wafer 401 using deposition equipment such as MOCVD.

[0217] like Fig.17 As shown, by using a deposition process, a second electrode 155 can be formed on the second conductive semiconductor layer 153. In the figure, the second electrode 155 is limited to a portion of the top surface of the second conductive semiconductor layer 153, but is not limited thereto.

[0218] like Fig.18 As shown, a mask layer 410 may be formed on the upper electrode. The mask layer 410 may be formed of, for example, silicon dioxide (SiO2), but is not limited thereto.

[0219] like Fig.19 As shown, the first etching process is performed using the mask layer 410 as a mask, thereby removing the second conductive semiconductor layer 153 and the active layer 152 in the vertical direction, and then, after removing the first depth d1 from the top surface of the first conductive semiconductor, the first etching process can be stopped. In this case, the second trench 1120 can be formed in the area where the top surface and the side of the first conductive semiconductor layer 151 removed by the first depth d1 intersect.

[0220] like Fig. 20 As shown, the second etching process is performed using the mask layer 410 as a mask, and the second etching process can be stopped after removing the second depth d2 from the top surface of the first conductive semiconductor layer 151. In this case, the first trench 1110 can be formed in the area where the top surface and the side of the first conductive semiconductor layer 151 removed by the second depth d2 intersect.

[0221] like Fig.21As shown, the third etching process is performed using the mask layer 410 as a mask, and the third etching process can be stopped after removing the third depth d3 from the top surface of the first conductive semiconductor layer 151. In this case, a third trench 1130 can be formed in the area where the top surface and the side of the first conductive semiconductor layer 151 removed by the third depth d3 intersect.

[0222] Then, a fourth etching process is performed using the mask layer 410 as a mask to remove the first conductive type semiconductor layer 151 to expose the top surface of the wafer.

[0223] like Fig. 22 As shown, a photosensitive film 430 may be formed on the exposed wafer. The top surface of the photosensitive film 430 may be located in the first trench 1110. The photosensitive film may prevent a passivation layer 157 described later from being formed on the side of the first conductive semiconductor layer 151 located below the first trench 1110.

[0224] like Fig.23 As shown, the passivation layer 157 may be formed on the entire area of ​​the substrate 310. For example, the passivation layer 157 may be formed on the photosensitive film. For example, the passivation layer 157 may be formed on the mask layer 410. For example, the passivation layer 157 may be formed on the side of the mask layer 410, the side of the second conductive type semiconductor layer 153, and the side of the active layer 152. For example, the passivation layer 157 may be formed on the side of the first conductive type semiconductor layer 151 located above the first trench 1110.

[0225] On the other hand, the first trench 1110 has an asymmetric groove 1200, so the passivation layer 157 may not be formed in the first trench 1110. That is, the passivation layer 157 formed on the side of the first conductive semiconductor layer 151 located above the first trench 1110 with the first trench 1110 as a reference and the passivation layer 157 formed on the photosensitive film may be separated from each other. This may be caused by the growth difference of the passivation layer 157. For example, the growth of the passivation layer 157 on the side of the first conductive semiconductor layer 151 and the top surface of the photosensitive film is different. Due to this growth difference, the passivation layer 157 formed on the side of the first conductive semiconductor layer 151 located above the first trench 1110 with the first trench 1110 as a reference and the passivation layer 157 formed on the photosensitive film may be separated from each other.

[0226] like Fig.24 As shown, the surface of the passivation layer 157 is removed by a wet etching process, so that the passivation layer 157 formed on the side of the first conductive semiconductor layer 151 located above the first trench 1110 and the passivation layer 157 formed on the photosensitive film are further separated, thereby forming a larger gap.

[0227] If the passivation layer 157 formed on the side of the first conductive type semiconductor layer 151 above the first trench 1110 and the passivation layer 157 formed on the photosensitive film are sufficiently spaced apart, the wet etching process may be omitted.

[0228] like Fig.25 As shown, by performing an additional wet process, the passivation layer 157 on the second electrode 155 is removed, so that the opening 158 can be formed on the second electrode 155 .

[0229] like Fig.26 As shown, the wafer can be flipped and transferred to the transfer substrate 500. That is, after flipping the wafer in a manner that the second electrode 155 faces the transfer substrate 500, a portion of the semiconductor light emitting device 150 can be buried in the adhesive layer 510 by applying pressure to the wafer. In other words, the semiconductor light emitting device 150 can be attached to the transfer substrate 500 using the adhesive layer 510 as a medium.

[0230] Then, the wafer may be separated by performing an LLO (Lase Lift-Off) process using laser.

[0231] Therefore, if Fig. 27 As shown, the photosensitive film can be separated by performing a PLO (PR Lift-Off: PR stripping) process, so that the passivation layer 157 on the photosensitive film can be removed. The PLO process can be performed using an etching solution that can etch the photosensitive film. In this case, with the first trench 1110 as a reference, the bottom surface (based on before flipping the semiconductor light emitting device 150) and a portion of the side of the first conductive semiconductor layer 151 can be exposed to the outside.

[0232] like Fig.28 As shown, after the first electrode 154 is formed, a patterning process is performed so that the first electrode 154 can be formed on a portion of the bottom surface and the side of the first conductive type semiconductor layer 151 .

[0233] like Fig.29 As shown, the adhesive layer is removed and the transfer substrate 500 is separated, thereby manufacturing the semiconductor light emitting device 150. For example, as Fig.28 The transfer substrate 500 shown is immersed in a container containing an etching solution, so that the adhesive layer can be removed by the etching solution. Since the adhesive layer is removed, the transfer substrate 500 can be separated from the semiconductor light emitting device 150. Then, the semiconductor light emitting device 150 contained in the container can be recycled using a recycling process.

[0234] Although not shown, a cleaning process may be performed to remove residues generated by the etching solution attached to the recovered semiconductor light emitting device 150 .

[0235] [Second embodiment]

[0236] Fig.30 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment.

[0237] The second embodiment is the same as the first embodiment except for the arrangement position of the first electrode 154. In the second embodiment, components having the same shape, structure and / or function as those of the first embodiment are given the same reference numerals and detailed descriptions are omitted.

[0238] Reference Fig.30 The semiconductor light emitting device 150A of the second embodiment may include light emitting portions 151, 152, 153, a first electrode 154, a second electrode 155, trenches 1110, 1120, 1130, and a passivation layer 157. The semiconductor light emitting device 150A of the second embodiment may include more constituent elements than these.

[0239] The light emitting portion may include a first conductive type semiconductor layer 151 , an active layer 152 , and a second conductive type semiconductor layer 153 .

[0240] A plurality of grooves may be disposed on the side of the light emitting portion. For example, a plurality of grooves may be disposed on the side of the first conductive semiconductor layer 151 .

[0241] The plurality of trenches may include: a first trench 1110 ; at least one second trench 1120 located above the first trench 1110 ; and at least one third trench 1130 located below the first trench 1110 .

[0242] For example, the passivation layer 157 may be disposed on the upper portion of the second electrode 155 and the side of the light emitting portion. For example, the passivation layer 157 may be disposed in the second trench 1120. For example, the end 157a of the passivation layer 157 may be located in the first trench 1110.

[0243] For example, the first electrode 154 may be disposed on a lower portion and a side portion of the first conductive type semiconductor layer 151 .

[0244] For example, the first electrode 154 may be disposed in the third trench 1130. For example, the first electrode 154 may be disposed in the first trench 1110. For example, the first electrode 154 may be disposed on the passivation layer 157. In other words, the first electrode 154 may extend from the lower portion of the first conductive semiconductor layer 151 to the passivation layer 157 via the third trench 1130 and the first trench 1110 disposed on the side of the first conductive semiconductor layer 151.

[0245] Therefore, the first electrode 154 is disposed on the side of the light emitting portion with a larger area, whereby maximum brightness can be obtained by maximizing the contact area between the connection electrode 350 and the semiconductor light emitting device 150A.

[0246] In addition, the first electrode 154 is disposed not only on the first conductive semiconductor layer 151 but also on the passivation layer 157 , thereby enhancing the bonding force of the first electrode 154 , thereby preventing the first electrode 154 from being separated.

[0247] The above detailed description should be understood as exemplary and should not be interpreted as limiting in all aspects. The scope of the embodiment should be determined by reasonable interpretation of the attached claims, and all changes within the equivalent scope of the embodiment are included in the scope of the embodiment.

[0248] Industrial Applicability

[0249] The embodiments may be applied to the display field for displaying images or information.

[0250] The embodiment can be applied to the display field that uses a semiconductor light emitting device to display images or information. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

Claims

1. A semiconductor light emitting device, wherein: include: Luminous part; A first electrode, located on the lower part and the side of the light emitting part; A second electrode is located on the upper portion of the light emitting portion; A plurality of grooves located on the side of the light emitting portion; as well as a passivation layer, located on the side of the light emitting portion, The end of the passivation layer is located in one of the plurality of grooves, An end of the first electrode is located in the one groove.

2. The semiconductor light emitting device according to claim 1, wherein: The plurality of grooves are arranged along the outer periphery of the side portion of the light emitting portion.

3. The semiconductor light emitting device according to claim 1, wherein: The plurality of grooves include: A first trench is located on a first region of a side portion of the first conductive type semiconductor layer; The first trench is a boundary region between the passivation layer and the first electrode.

4. The semiconductor light emitting device according to claim 1, wherein: An end of the first electrode is connected to the end of the passivation layer in the one groove.

5. The semiconductor light emitting device according to claim 1, wherein: Each of the plurality of grooves has an asymmetric groove.

6. The semiconductor light emitting device according to claim 1, wherein: The light emitting unit comprises: a first conductive type semiconductor layer; an active layer, located on the first conductive type semiconductor layer; and A second conductive semiconductor layer is located on the active layer. The plurality of trenches are disposed on the side of the first conductive type semiconductor layer.

7. The semiconductor light emitting device according to claim 6, wherein: The plurality of grooves include: a first trench located on a first region of the side portion of the first conductive type semiconductor layer; and At least one second trench is located on a second region of the side portion of the first conductive type semiconductor layer.

8. The semiconductor light emitting device according to claim 7, wherein: The end of the passivation layer is located in the first trench.

9. The semiconductor light emitting device according to claim 7, wherein: The passivation layer is disposed in at least one of the second trenches.

10. The semiconductor light emitting device according to claim 7, wherein: The plurality of trenches include at least one third trench located on a third region of the side portion of the first conductive type semiconductor layer, The first electrode is configured in at least one of the third trenches.

11. The semiconductor light emitting device according to claim 1, wherein: The first electrode includes a reflective layer.

12. A semiconductor light emitting device, wherein: include: Luminous part; A first electrode, located on the lower part and the side of the light emitting part; A second electrode is located on the upper portion of the light emitting portion; A plurality of grooves located on the side of the light emitting portion; as well as a passivation layer, located on the side of the light emitting portion, The end of the passivation layer is located in one of the plurality of grooves, An end of the first electrode is located on the passivation layer.

13. A semiconductor light emitting device, wherein: include: Light-emitting part; A first electrode, located on the lower part and the side of the light emitting part; A second electrode is located on the upper portion of the light emitting portion; A plurality of grooves located on the side of the light emitting portion; as well as a passivation layer, located on the side of the light emitting portion, The end of the passivation layer is located in one of the plurality of grooves, Each of the plurality of grooves has: a bottom portion having a first width; as well as The side portion, connected to the bottom portion, has a second width greater than the first width.

14. The semiconductor light emitting device according to claim 13, wherein: The angle between the bottom and the side is an acute angle.

15. A semiconductor light emitting device, wherein: include: Light-emitting part; A first electrode, located on the lower part and the side of the light emitting part; A second electrode is located on the upper portion of the light emitting portion; A plurality of grooves located on the side of the light emitting portion; as well as a passivation layer, located on the side of the light emitting portion, The end of the passivation layer is located in one of the plurality of grooves, The light emitting unit comprises: a first conductive type semiconductor layer; an active layer, located on the first conductive type semiconductor layer; and A second conductive semiconductor layer is located on the active layer. The plurality of trenches are arranged on the side of the first conductive semiconductor layer, The plurality of grooves include: a first trench located on a first region of the side portion of the first conductive type semiconductor layer; and at least one second trench located on a second region of the side portion of the first conductive type semiconductor layer, The end of the passivation layer is located in the first groove, The end of the first electrode is connected to the end of the passivation in the first trench.

16. A display device, wherein: include: substrate; A first group of assembly lines and a second group of assembly lines are located on the substrate; A partition wall, disposed on the first assembly line group and the second assembly line group, having an assembly hole; A semiconductor light emitting device is located in the assembly hole; as well as A connecting electrode is disposed in the assembly hole to connect the semiconductor light emitting device to at least one of the first assembly line and the second assembly line. The semiconductor light emitting device comprises: Light-emitting part; A first electrode, located on the lower part and the side of the light emitting part; A second electrode is located on the upper portion of the light emitting portion; a plurality of grooves located on the side of the light emitting portion; and a passivation layer, located on the side of the light emitting portion, The end of the passivation layer is located in one of the plurality of grooves, The plurality of grooves include: A first trench is located on a first region of a side portion of the first conductive type semiconductor layer; The first trench is a boundary region between the passivation layer and the first electrode.

17. The display device according to claim 16, wherein: The connecting electrode is connected to the first electrode of the semiconductor light emitting device.

18. The display device according to claim 17, wherein: The connecting electrode is connected to the passivation layer of the semiconductor light emitting device and the inner side surface of the assembly hole in the assembly hole.

19. The display device according to claim 16, wherein: The connection electrode is arranged in the assembly hole along the outer periphery of the semiconductor light emitting device.

20. The display device according to claim 16, wherein: include: an insulating layer, located on the partition wall; as well as An electrode wiring is connected to the semiconductor light emitting device through the insulating layer.

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