Electronic device, temperature equalizing plate and preparation method thereof

Abstract

The embodiments of the present application provide an electronic device, a temperature equalizing plate and a preparation method thereof, which relate to the field of electronic devices. The purpose is to improve the heat dissipation performance of the temperature equalizing plate. The specific scheme is: the temperature equalizing plate includes a first metal layer, a second metal and a capillary structure, and the first metal layer includes a first main body and a first edge portion. The second metal layer includes a second main body and a second edge portion; the surfaces of the first edge portion and the second edge portion are connected to form a connecting layer, and the number of grains with a grain size less than or equal to 50μm in the connecting layer accounts for 70% or more. The small grains of the connecting layer can prevent impurities that affect the capillary force of the capillary structure in the accommodating cavity from entering the accommodating cavity, so that the heat dissipation performance of the temperature equalizing plate is better. The temperature equalizing plate may include a metal cover plate and a connecting layer, which is mainly composed of metal grains with relatively small grain size, and may have high strength and high rigidity characteristics on a macro scale. It may also include some non-metallic materials with high flexibility to meet the heat dissipation characteristics requirements of different electronic products.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of electronic devices, and in particular to an electronic device, a temperature vapor chamber, and a method for preparing the same. Background Art

[0002] Electronic devices (such as mobile phones) generate heat when working. If this heat accumulates inside the electronic device for a long time, it will cause the temperature of the electronic product to rise, affecting the user experience and even causing failures. At present, vapor chambers (VC) are used to dissipate heat in electronic devices. A vapor chamber is a vacuum cavity with a capillary structure on the inner wall and a working fluid (i.e., working medium) injected into it. At present, the heat dissipation performance of a vapor chamber has become an important factor affecting the heat dissipation performance of electronic equipment. Therefore, improving the heat dissipation performance of a vapor chamber is an urgent problem that needs to be solved by the vapor chamber. Summary of the invention

[0003] The embodiments of the present application provide an electronic device, a temperature vapor chamber and a method for preparing the same, aiming to improve the heat dissipation performance of the temperature vapor chamber.

[0004] In order to achieve the above-mentioned purpose, this application adopts the following technical solution.

[0005] In the first aspect, an embodiment of the present application provides a temperature equalizing plate. The temperature equalizing plate includes a first cover plate, a second cover plate and a capillary structure. The first cover plate includes a first metal layer, the first metal layer includes a first main body and a first edge portion arranged around the periphery of the first main body. The second cover plate includes a second metal layer, the second metal layer includes a second main body and a second edge portion arranged around the periphery of the second main body; the surface of the first edge portion and the surface of the second edge portion are connected to form a connecting layer, and the first main body and the second main body together form a receiving cavity. The capillary structure is located in the receiving cavity and connected to the first main body. Among them, along the direction perpendicular to the thickness direction of the connecting layer, the number of grains with a grain size less than or equal to 50μm in the connecting layer of at least 5mm in length accounts for 70% or more of the total number of grains. As a result, the connection between the first cover plate and the second cover plate has the advantage of small grain size, and small grains are conducive to uniform stress between the first edge portion and the second edge portion; the mechanical properties between the first edge portion and the second edge portion are excellent. In addition, the smaller grain size of the first edge portion can prevent other grain structures of the first metal layer on the side away from the receiving cavity from passing through the first edge portion into the receiving cavity, thereby preventing the aforementioned other grain structures from affecting the capillary force of the capillary structure in the receiving cavity and reducing the heat dissipation performance of the heat spreader. Similarly, the smaller grain size of the second edge portion can prevent other grain structures of the second metal layer on the side away from the receiving cavity from affecting the capillary force of the capillary structure in the receiving cavity. The better the capillary force of the capillary structure, the better the heat dissipation performance of the heat spreader, which can effectively improve the heat dissipation performance of the heat spreader.

[0006] In combination with the first aspect, in some achievable manners, the number of grains with a grain size less than or equal to 50 μm in the connection layer accounts for 70% or more of the total number of grains. Thus, the entire connection between the first cover plate and the second cover plate has the advantage of good mechanical properties.

[0007] In combination with the first aspect, in some achievable manners, the number of grains with a grain size less than or equal to 50 μm in the connection layer accounts for 90% or more of the total number of grains. Thus, the entire connection between the first cover plate and the second cover plate has the advantage of good mechanical properties.

[0008] In combination with the first aspect, in some achievable methods, the material of the first metal layer is a first metal material, the first edge portion has a first surface and a second surface arranged opposite to each other, the second surface is connected to the surface of the second edge portion, and the mass percentage of the first metal material is greater than or equal to 95% at a distance greater than or equal to 3μm from the first surface in the first edge portion. As a result, the first edge portion is mainly made of the first metal material, and other materials other than the first metal material are less or almost non-existent, thereby avoiding that other materials other than the first metal material affect the connection performance between the first edge portion and the second edge portion. Improve the problem of reduced heat dissipation performance of the temperature spreader due to the reaction of other materials other than the first metal material with the working fluid.

[0009] In combination with the first aspect, in some achievable methods, the material of the second metal layer is a second metal material, the second edge portion has a third surface and a fourth surface arranged opposite to each other, the fourth surface is connected to the surface of the first edge portion, and the mass percentage of the second metal material is greater than or equal to 95% at a distance greater than or equal to 3 μm from the third surface in the second edge portion. Thus, the mechanical properties of the second edge portion are better, and the problem of reduced heat dissipation performance of the vapor chamber due to a large amount of materials other than the second metal material can be improved.

[0010] In conjunction with the first aspect, in some achievable ways, the first cover plate further comprises a support layer, the support layer being connected to a side of the first metal layer away from the second metal layer. Thus, the provision of the support layer can increase the thickness of the first cover plate. The strength and thickness of the first cover plate can be adjusted by adjusting the mechanical strength and thickness of the support layer.

[0011] In combination with the first aspect, in some achievable manners, the second cover plate further comprises a support layer, the support layer being connected to a side of the second metal layer away from the first metal layer. Thus, the provision of the support layer can improve the strength of the second cover plate.

[0012] In combination with the first aspect, in some achievable methods, the material of the support layer includes at least one of titanium and its alloys, aluminum and its alloys, magnesium and its alloys, and steel. As a result, there are more choices of materials for the support layer, and because the number of grains with a grain size less than or equal to 50 μm in the connection layer of at least 5 mm in length accounts for 70% or more of the total number of grains, the material of the support layer is not easy to pass through the first metal layer into the accommodation cavity. Then the material selection of the support layer has little effect on the heat dissipation performance of the working medium in the accommodation cavity.

[0013] In conjunction with the first aspect, in some achievable manners, the first cover plate further comprises a polymer layer, and the polymer layer is connected to a side of the first metal layer away from the second metal layer. The polymer material has a low density, which is conducive to reducing the mass of the first cover plate, making the temperature homogenizing plate lightweight, and achieving flexibility.

[0014] In combination with the first aspect, in some achievable manners, the second cover plate further comprises a polymer layer, the polymer layer being connected to a side of the second metal layer away from the first metal layer. The polymer material has a low density, which is conducive to reducing the mass of the second cover plate and making the temperature homogenizing plate lightweight.

[0015] In combination with the first aspect, in some achievable embodiments, the material of the first metal layer includes at least one of copper and its alloys, and aluminum and its alloys.

[0016] In combination with the first aspect, in some achievable methods, the thickness of the first metal layer is 5μm-80μm. Because the number of grains with a grain size less than or equal to 50μm in the connection layer of at least 5mm in length accounts for 70% or more of the total number of grains. Even if the thickness of the first metal layer is only 5μm, the connection performance at the connection between the first edge portion and the second edge portion is better, and the first metal layer can better isolate substances that produce non-condensable gas from entering the accommodating cavity, so that the temperature dispersion board has excellent heat dissipation performance.

[0017] In conjunction with the first aspect, in some achievable ways, the thickness of the first metal layer can be 5 μm-10 μm. The first metal layer has a smaller thickness, which can save the amount of the first metal layer, and the thickness of the first metal layer within this range can still reduce the impurities entering the receiving cavity and reduce the generation of non-condensable gas in the receiving cavity.

[0018] In combination with the first aspect, in some achievable methods, the temperature homogenizing plate further includes: a plurality of protrusions spaced apart in the accommodating cavity, one end of each of the plurality of protrusions being connected to the second main body, and the other end being a free end. Thus, the plurality of protrusions can increase the surface area in the accommodating cavity, increase the contact area between the working fluid and the accommodating cavity, and make it easier for the working fluid to adhere to the accommodating cavity. Secondly, the plurality of protrusions can guide the gaseous working fluid. In addition, the protrusions also have the function of drainage, and the working fluid attached to the surface of the protrusions can flow and converge along the surface of the protrusions, which is beneficial to shorten the time of the thermal cycle of the working fluid and increase the heat dissipation performance of the temperature homogenizing plate.

[0019] In combination with the first aspect, in some achievable ways, the capillary structure is connected to the first main body as an integrally formed part. As a result, the connectivity between the capillary structure and the first main body is excellent, and the capillary structure and the first main body are not easy to separate. In the scenario where the temperature equalizer is bent, the integrally formed first main body and capillary structure can effectively reduce the friction generated by the relative movement of the capillary structure and the first main body during the bending of the temperature equalizer. If the first main body is bent, the capillary structure and the first main body are not easy to delaminate or tear.

[0020] In the second aspect, the embodiment of the present application provides a method for preparing a temperature equalizing plate. The method for preparing the temperature equalizing plate includes: providing a first cover plate, a second cover plate and a capillary structure, the first cover plate includes a first metal layer, the first metal layer includes a first main body and a first edge portion arranged around the periphery of the first main body; the second cover plate includes a second metal layer, the second metal layer includes a second main body and a second edge portion arranged around the periphery of the second main body; the capillary structure is connected to the first main body. The first cover plate, the capillary structure and the second cover plate stacked in sequence are subjected to a first heat treatment to connect the first edge portion and the second edge portion. The temperature of the first heat treatment is 150°C-400°C, the pressure is greater than or equal to 30MPa, and the time is greater than or equal to 30min. Since the temperature of the first heat treatment is relatively low, the problem of deformation and oxidation of the first cover plate and the second cover plate caused by high temperature is effectively improved. In addition, due to the low temperature, the first heat treatment process has a lower effect on the hardness and yield strength of the first cover plate and the second cover plate. The grains of the first metal layer and the second metal layer are relatively small at 150°C-400°C, so that more than 70% of the grains in the connecting layer are less than 50μm in size. The grains in the connecting layer are uniform and fine, the internal stress of the connecting layer is low, and it is not easy to delaminate or crack.

[0021] In combination with the second aspect, in some achievable embodiments, the pressure of the first heat treatment is 30 MPa-200 MPa, and the time is 30 min-100 min.

[0022] In combination with the second aspect, in some achievable methods, before the first heat treatment step is performed on the first cover plate, the capillary structure and the second cover plate stacked in sequence, the step further includes: performing a second heat treatment on the first cover plate and the capillary structure to connect the capillary structure to the first main body. The temperature of the second heat treatment is 150°C-400°C, the pressure is greater than or equal to 5MPa, and the time is greater than or equal to 30min. Since the temperature of the second heat treatment is relatively low, the second heat treatment process has little effect on the capillary structure and the first cover plate, so that the first cover plate can maintain good hardness and yield strength after the second heat treatment. During the second heat treatment, the amount of grain growth in the first cover plate is small, and the elements on the side of the first cover plate away from the capillary structure are not easy to diffuse to the side close to the capillary structure. During the second heat treatment of the capillary structure, the micro-nano structure on the capillary structure is not easy to collapse or deform, and can still maintain good capillary force.

[0023] In combination with the second aspect, in some achievable methods, the pressure is 5 MPa-200 MPa, and the time is 30 min-100 min.

[0024] In combination with the second aspect, in some achievable ways, before the first heat treatment step is performed on the first cover plate, the capillary structure and the second cover plate which are stacked in sequence, the step further includes: stacking the first cover plate, the capillary structure and the second cover plate, and filling nanoparticles between the first edge portion and the second edge portion. Thus, the nanoparticles help the grains on the surface of the first edge portion and the second edge portion to fuse rapidly during the first treatment process. The nanoparticles have the function of acting as crystal nuclei of the grains, helping to shorten the nucleation time on the surface of the first edge portion and the second edge portion, and shortening the formation time of the connecting layer.

[0025] In a third aspect, an embodiment of the present application provides an electronic device. The electronic device includes a printed circuit board and any one of the temperature averaging plates provided in the first aspect, and the first cover plate is connected to the printed circuit board. Because the temperature averaging plate has good heat dissipation performance. The temperature averaging plate can cool the printed circuit board and improve the heat dissipation performance of the electronic device.

[0026] In conjunction with the third aspect, in some achievable methods, the electronic device further includes: a middle frame; the temperature averaging plate, the middle frame and the printed circuit board are stacked in sequence; the middle frame is provided with a through hole penetrating the middle frame along the thickness direction of the middle frame, and the first cover plate is connected to the printed circuit board through the through hole. This is conducive to reducing the total thickness of the middle frame and the temperature averaging plate, improving the integration of the electronic device, and facilitating the miniaturization of the electronic device. In addition, the temperature averaging plate can be regarded as a part of the middle frame, and the temperature averaging plate provides support strength for supporting structures such as the display screen, so that the temperature averaging plate can take into account multiple functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1aThe figure is a schematic diagram of the structure of an electronic device.

[0028] Figure 1b This is a schematic diagram of the middle frame and temperature equalizer structure provided in an embodiment of the present application.

[0029] Figure 2a A schematic diagram of the structure of the temperature equalizing plate provided in an embodiment of the present application.

[0030] Figure 2b A schematic diagram of the exploded structure of the temperature equalizing plate provided in an embodiment of the present application.

[0031] Figure 3a It is a schematic diagram of the structure of a heat spreader in the related art.

[0032] Figure 3b A heat sink obtained by a process Figure 3a Schematic diagram of the cross section at the middle section CC.

[0033] Figure 3c The heat sink obtained for another process is Figure 3a Schematic diagram of the cross section at the middle section CC.

[0034] Figure 3d The heat sink obtained for another process is Figure 3a Schematic diagram of the cross section at the middle section CC.

[0035] Figure 4a The illustrations of the first edge portion and the second edge portion are schematic cross-sectional views of 50 μm.

[0036] Figure 4b The illustrations of the first edge portion and the second edge portion are schematic cross-sectional views of 20 μm.

[0037] Figure 4c The illustrations of the first edge portion and the second edge portion are 1 μm cross-sectional schematic diagrams.

[0038] Figure 5a for Figure 2a A schematic cross-sectional view at DD in FIG.

[0039] Figure 5b for Figure 2a Another schematic cross-sectional view at DD in FIG.

[0040] Figure 5c for Figure 2a Another schematic cross-sectional view at DD in FIG.

[0041] Figure 5d for Figure 2a A schematic cross-sectional view of another type of DD in FIG.

[0042] Figure 6aA schematic diagram of the internal structure of another temperature equalizing plate provided in an embodiment of the present application.

[0043] Figure 6b A schematic diagram of the internal structure of another temperature equalizing plate provided in an embodiment of the present application.

[0044] Figure 7a A process flow chart of a temperature homogenizing plate provided in an embodiment of the present application.

[0045] Figure 7b For execution Figure 7a Schematic diagram of the structure at s2.

[0046] Figure 7c For execution Figure 7a Schematic diagram of the structure during s3.

[0047] Figure 7d For execution Figure 7a Schematic diagram of the structure during S4.

[0048] In the figure: 10-electronic device; 11-cover plate; 12-display screen; 13-printed circuit board; 14-middle frame; 15-back shell; 16-frame; 17-through hole; 171-step surface; 100-heat averaging plate; 110-first cover plate; 120-second cover plate; 130-capillary structure; 111-first metal layer; 101-first main body; 102-first edge; 112-support layer; 113-polymer layer; 121-second metal layer; 201-second main body; 202-second edge; 20-connecting layer; 140-accommodating cavity; 150-protrusion; 01-heat averaging plate; 02-upper cover; 03-lower cover; 04-capillary element; 05-solder layer; 06-guide column; 103-first surface; 104-second surface; 122-opening; 203-third surface; 204-fourth surface. DETAILED DESCRIPTION

[0049] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0050] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0051] In addition, in the present application, directional terms such as "upper" and "lower" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the changes in the orientation of the components in the drawings.

[0052] Vapor chamber (VC): Also known as a heat spreader, it is a vacuum cavity with a microstructure on the inner wall and capable of injecting working fluid. The working principle of the vapor chamber specifically includes four main steps: conduction, evaporation, convection, and condensation. When the heat generated by the heat source enters the vapor chamber through heat conduction, the working fluid near the heat source in the vapor chamber will quickly vaporize after absorbing the heat, taking away a large amount of heat at the same time. Reusing the heat dissipation property of steam, when the steam in the vapor chamber diffuses from the high temperature zone to the low temperature zone, when the steam contacts the inner wall with a lower temperature, it will quickly condense into liquid and release heat energy; the working fluid condensed into liquid returns to the heat source through the capillary structure, thereby completing a heat conduction cycle and forming a two-way circulation system in which both vapor and liquid working fluids coexist.

[0053] Capillary structure: Since the liquid surface has surface tension, when the infiltrated liquid is in the capillary pore, its liquid surface is concave, so the liquid surface will exert a pulling force on the liquid below, causing the liquid to move upward along the wall of the capillary pore. This causes the capillary phenomenon. The capillary structure can include multiple capillaries or fine grooves similar to capillaries. In this way, when the liquid working medium enters the capillary pores or fine grooves in the capillary structure, it will flow to the other end of the capillary pore through capillary action, completing the transfer and return of the working medium.

[0054] The present application provides an electronic device, which may be a terminal device having an antenna and an electrical connector. The electronic device may be implemented in various forms, including but not limited to a mobile phone, a tablet computer (pad), a personal digital assistant (PDA), a desktop computer, a wearable device, a display device (such as a television), an information display device, or a smart home terminal. In addition, in an embodiment of the present application, the electronic device may be a foldable device, such as a foldable mobile phone. The electronic device may also be a bar phone. In an embodiment of the present application, the electronic device is exemplified as a mobile phone.

[0055] Figure 1a FIG. 1 is a schematic diagram of the structure of an electronic device 10. Figure 1aAs shown, the electronic device 10 may include: a cover 11, a display 12, a printed circuit board (PCB) 13, a middle frame 14 and a rear shell 15. In some embodiments, the rear shell 15 is also called a rear cover. The cover 11, the display 12 and the rear shell 15 are stacked.

[0056] The cover plate 11 can be set close to the display screen 12, and the cover plate 11 is used to protect and dustproof the display screen 12. The cover plate 11 can be a glass cover plate (cover glass), and can also be replaced by a cover plate of other materials, such as an ultra-thin glass material cover plate, a PET (polyethylene terephthalate) material cover plate, etc.

[0057] The display screen 12 may include a liquid crystal display panel (LCD), a light emitting diode (LED) display panel or an organic light-emitting diode (OLED) display panel, etc., and the present application does not limit this. The types of the display screen 12 include but are not limited to a water drop screen, a notch screen, a full screen or a punch hole screen.

[0058] The middle frame 14 has the function of supporting the whole device and includes a high thermal conductivity material (such as copper or aluminum). The middle frame 14 has a high thermal conductivity rate and is used to dissipate the heat in the electronic device 10 to the outside of the electronic device 10 . Figure 1a The printed circuit board 13 shown in the figure is arranged between the middle frame 14 and the rear shell 15. It should be understood that in some embodiments, the printed circuit board 13 can also be arranged between the middle frame 14 and the display screen 12, and the embodiment of the present application does not limit this.

[0059] Exemplarily, the electronic device 10 may further include a battery (not shown in the figure). The battery may be disposed between the middle frame 14 and the rear housing 15, or between the middle frame 14 and the display screen 12, which is not limited in the present application.

[0060] Exemplarily, the printed circuit board 13 carries electronic components, for example, a radio frequency chip, etc. In some embodiments, components such as input buttons, a transmitter, a processor, a memory, a battery, a charging circuit, a system on chip (SoC) structure, etc. can be mounted on the printed circuit board 13 or connected to the printed circuit board 13.

[0061] In some embodiments, the printed circuit board 13 is divided into a main board and a sub-board, and the battery can be arranged between the main board and the sub-board, wherein the main board can be arranged between the middle frame 14 and the upper edge of the battery, and the sub-board can be arranged between the middle frame 14 and the lower edge of the battery.

[0062] In some embodiments, the electronic device 10 may further include a frame 16, which may be formed of a conductive material such as metal. The frame 16 may be disposed between the display screen 12 and the rear housing 15 and extend circumferentially around the periphery of the display screen 12. The frame 16 may have four sides surrounding the display screen 12, and the four sides help fix the display screen 12.

[0063] Figure 1a In the embodiment, the frame 16 and the middle frame 14 are connected as an integrally formed part, and the frame 16 and the middle frame 14 together support the entire electronic device 10. The rear shell 15 and the cover plate 11 are respectively covered along the opposite sides of the frame 16 to form a shell or housing of the electronic device. In other embodiments, the frame 16 and the middle frame 14 can be connected by means of shrapnel, screws, welding, etc.

[0064] In some embodiments, the electronic device 10 includes a temperature averaging plate 100, which can be connected to the electronic components carried on the printed circuit board 13. When the electronic device 10 is working, the printed circuit board 13 generates a lot of heat, and the temperature averaging plate 100 connected to the printed circuit board 13 can dissipate heat for the printed circuit board 13.

[0065] The embodiment of the present application does not limit the connection method between the temperature averaging plate 100 and the printed circuit board 13. In some embodiments, the middle frame 14 is located between the printed circuit board 13 and the temperature averaging plate 100. The heat on the printed circuit board 13 is transferred to the middle frame 14, and then dissipated by the temperature averaging plate 100. In some embodiments, a hollow area is provided on the middle frame 14, and some devices (such as chips) of the printed circuit board 13 pass through the aforementioned hollow area to fit with the temperature averaging plate 100. Alternatively, part of the temperature averaging plate 100 passes through the aforementioned hollow area to fit with the printed circuit board 13.

[0066] In some embodiments, the temperature vapor chamber 100 may be located between the middle frame 14 and the printed circuit board 13 .

[0067] It is understandable that in other embodiments of the present application, the temperature homogenizing plate 100 may be connected to other structures in the electronic device 10 (eg, the rear housing 15, etc.), and the embodiments of the present application do not limit this.

[0068] Figure 2a This is a schematic diagram of the structure of the temperature homogenizing plate 100 provided in the embodiment of the present application. Figure 2aThe temperature homogenizing plate 100 includes a first cover plate 110 and a second cover plate 120 , and the first cover plate 110 and the second cover plate 120 are jointly arranged to form a receiving cavity 140 .

[0069] Figure 2b This is a schematic diagram of the exploded structure of the temperature homogenizing plate 100 provided in the embodiment of the present application. Figure 2b The temperature plate 100 further includes a capillary structure 130. The first cover plate 110, the capillary structure 130 and the second cover plate 120 are stacked in sequence. The thickness direction of the temperature plate 100 is defined as the z direction, and the first cover plate 110, the capillary structure 130 and the second cover plate 120 are stacked along the z direction.

[0070] The first cover plate 110 includes a first metal layer 111, the first metal layer 111 includes a first main body 101 and a first edge portion 102, the first edge portion 102 is arranged around the periphery of the first main body 101, and the first edge portion 102 is connected to the first main body 101, for example, the first edge portion 102 and the first main body 101 are connected to form an integral molded part. The second cover plate 120 includes a second metal layer 121, the second metal layer 121 includes a second main body 201 and a second edge portion 202, the second edge portion 202 is arranged around the periphery of the second main body 201, and the second main body 201 and the second edge portion 202 are connected, for example, the second main body 201 and the second edge portion 202 are connected to form an integral molded part.

[0071] The first metal layer 111 and the second metal layer 121 are stacked along the z direction, and the surface of the first edge portion 102 and the surface of the second edge portion 202 are connected to form a connection layer 20, that is, the connection layer 20 includes the connected first edge portion 102 and the second edge portion 202. The first main body portion 101 and the second main body portion 201 together form a receiving cavity 140. The capillary structure 130 is located in the receiving cavity 140 and connected to the first main body portion 101. Among them, the number of grains with a grain size less than or equal to 50μm (micrometer) in the connection layer 20 of at least 5mm (millimeter) length accounts for 70% or more of the total number of grains.

[0072] In the embodiment of the present application, the "edge" of the first edge portion 102 refers to the portion located at the periphery of the first main body portion 101 and directly connected to or in direct contact with the first main body portion 101. Similarly, the "edge" of the second edge portion 202 refers to the portion located at the periphery of the second main body portion 201 and directly connected to or in direct contact with the second main body portion 201. There are no bubbles between the first edge portion 102 and the second edge portion 202, or the bubble size between the first edge portion 102 and the second edge portion 202 is less than or equal to 10μm. The embodiment of the present application does not limit the width of the first edge portion 102 and the second edge portion 202.

[0073] Figure 3aIt is a structural schematic diagram of a heat spreader 01 of the related art. Figure 3a In the figure, the heat spreader 01 includes an upper cover 02, a lower cover 03, a guide column 06 and a capillary element 04. The upper cover 02 and the lower cover 03 together form a cavity, and the capillary element 04 and the guide column 06 are both located in the cavity. The material of the upper cover 02 and the lower cover 03 is copper.

[0074] Figure 3b A heat sink 01 obtained by a process Figure 3a Schematic diagram of the cross section at the middle section CC. Figure 3b The upper cover 02 and the lower cover 03 are connected by high temperature diffusion welding. The welding temperature is in the range of 700℃-850℃. The temperature of 700℃-850℃ will reduce the capillary force of the capillary element and cause the upper cover 02 and the lower cover 03 to deform, and the structural strength of the heat spreader 01 is not high. Figure 3b The legend of Figure (1) is 50μm, and the legend of Figure (2) is 20μm. Figure 3b It can be seen that the grain size at the connection between the upper cover 02 and the lower cover 03 is 29μm-140μm. The grains are coarse.

[0075] Figure 3c The heat sink 01 obtained by another process is Figure 3a Schematic diagram of the cross section at the middle section CC. Figure 3c The upper cover 02 and the lower cover 03 are welded by solder paste, and a welding layer 05 is formed between the upper cover 02 and the lower cover 03 . Figure 3c The legend of Figure (1) is 20μm, and the legend of Figure (2) is 50μm. Figure 3c It can be seen that there are pores at the connection between the upper cover 02 and the lower cover 03. The presence of pores will affect the airtightness and vacuum degree of the heat spreader 01, resulting in a decrease in the heat dissipation performance of the heat spreader 01. In addition, the grain size at the connection between the upper cover 02 and the lower cover 03 is 91μm-102μm. The grains are coarse. In addition, during the welding process of the upper cover 02 and the lower cover 03, the solder paste enters the cavity and affects the capillary force of the capillary element. The solder paste will decompose at high temperature to generate non-condensable gases (NCG), which will affect the vacuum degree of the cavity and reduce the heat dissipation of the heat spreader 01. The solder paste will form a solder layer between the upper cover 02 and the lower cover 03, and the solder layer will reduce the mechanical strength and yield strength of the heat spreader 01.

[0076] Figure 3d The heat sink 01 obtained by another process is Figure 3a Schematic diagram of the cross section at the middle section CC. Figure 3d The upper middle cover 02 includes a copper layer and a stainless steel layer stacked together. The lower lower cover 03 includes a copper layer and a stainless steel layer stacked together. Figure 3d The legend for Figure (1) is 3 μm, and the legend for Figure (2) is 10 μm. Figure 3d In the dotted box in (1) of the figure, the dark grey is stainless steel and the light grey is copper grains. Figure 3d It can be seen that the copper grain size at the connection between the upper cover 02 and the lower cover 03 is relatively large, and some components of stainless steel (such as carbon and iron) are doped between the copper grains. The components of the aforementioned stainless steel (such as iron grains) enter the cavity and generate non-condensable gas with the water in the cavity, affecting the vacuum degree of the cavity and reducing the heat dissipation of the heat plate 01.

[0077] In addition, in the related art, during the process of connecting the upper cover 02 and the lower cover 03, the grains in the upper cover 02 and the lower cover 03 will grow, and the size of some grains is as high as 100μm. The growth of grains will cause the strength of the upper cover 02 and the lower cover 03 to decrease. After the connection, the hardness and yield strength of the upper cover 02 and the lower cover 03 decrease by 40%, which seriously affects the mechanical properties of the heat spreader.

[0078] The heat dissipation capability of the temperature vapor chamber 100 provided in the embodiment of the present application is better.

[0079] Please return to Figure 2b In the present application, the number of grains with a grain size less than or equal to 50 μm in the connection layer 20 of at least 5 mm in length accounts for 70% or more of the total number of grains. The length of the aforementioned connection layer 20 refers to the dimension of the connection layer 20 in a direction perpendicular to the thickness direction of the connection layer 20. That is, along the direction perpendicular to the z-direction, the number of grains with a grain size less than or equal to 50 μm in the connection layer 20 of at least 5 mm in length accounts for 70% or more of the total number of grains. Because there are multiple directions perpendicular to the z-direction, the number of grains with a grain size less than or equal to 50 μm in the connection layer 20 of at least 5 mm in any one direction only accounts for 70% or more of the total number of grains. Exemplarily, the number of grains having a grain size less than or equal to 50 μm in the aforementioned connecting layer 20 having a length of at least 5 mm accounts for 70%, 75%, 80%, 85%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99% or 100% of the total number of grains.

[0080] Wherein, crystal grain refers to a tiny or micron-sized crystal. The aforementioned grain size is the linear length of the grain, or the diameter of the grain, which refers to the largest size of the grain in all directions. Exemplarily, the grain size can be obtained by obtaining a crystal phase diagram through an X-ray diffraction pattern, metallography, scanning electron microscope (SEM), etc.

[0081] The connection between the first cover plate 110 and the second cover plate 120 has the advantage of small grain size, which is conducive to uniform stress between the first edge portion 102 and the second edge portion 202; the mechanical properties between the first edge portion 102 and the second edge portion 202 are excellent. In addition, the small grain size of the first edge portion 102 can prevent other grain structures of the first metal layer 111 away from the side of the accommodating cavity 140 from passing through the first edge portion 102 and entering the accommodating cavity 140, thereby preventing the aforementioned other grain structures from affecting the capillary force of the capillary structure 130 in the accommodating cavity 140 and reducing the heat dissipation performance of the temperature equalizing plate 100. Similarly, the small grain size of the second edge portion 202 can prevent other grain structures of the second metal layer 121 away from the side of the accommodating cavity 140 from affecting the capillary force of the capillary structure 130 in the accommodating cavity 140. The better the capillary force of the capillary structure 130, the better the heat dissipation performance of the temperature equalizing plate 100, which can effectively improve the heat dissipation performance of the temperature equalizing plate 100.

[0082] In addition, the grain size in the first edge portion 102 and the second edge portion 202 is relatively small, indicating that in the process of connecting the first edge portion 102 and the second edge portion 202, the amount of internal grain growth in the first edge portion 102 and the second edge portion 202 is small, indicating that the connection process conditions of the first edge portion 102 and the second edge portion 202 may not have process conditions (such as high temperature) that cause a large amount of grain growth, so as to avoid such process conditions weakening the mechanical properties of the first cover plate 110 and the second cover plate 120 and reducing the capillary force of the capillary structure 130. For example, high temperature can cause the micro-nano structure on the surface of the capillary structure 130 to collapse or melt. The aforementioned micro-nano structure includes micron-scale or nano-scale pores, barb structures or needle-like protrusions on the surface of the capillary structure 130.

[0083] In some embodiments, the number of grains with a grain size less than or equal to 50 μm in the connection layer 20 accounts for 70% or more of the total number of grains. In other words, the grain size of more than 70% of the entire connection layer 20 is less than or equal to 50 μm. In this way, the entire connection between the first cover plate 110 and the second cover plate 120 has the advantage of good mechanical properties, and the heat dissipation performance of the vapor chamber 100 is better.

[0084] In the embodiment of the present application, the “metal” in the first metal layer 111 is not limited to a single metal, but may include a metal alloy. The same is true for the “metal” in the second metal layer 121 .

[0085] Exemplarily, the material of the first metal layer 111 includes at least one of copper and its alloys, aluminum and its alloys. Copper and its alloys, aluminum and its alloys have low melting points, and the temperature requirement for the connection process between the first metal layer 111 and the second metal layer 121 is relatively low (e.g., 150°C-400°C). It is understood that the first metal layer 111 may also include unavoidable impurities, such as unavoidable impurities in the process of forming the raw materials of the first metal layer 111 at the current technical level.

[0086] Similarly, in some embodiments, the material of the second metal layer 121 includes at least one of copper and its alloys, aluminum and its alloys. The following description takes copper as an example. In the embodiment where the material of the first metal layer 111 and the material of the second metal layer 121 both include copper, copper has excellent ductility. After copper and copper are connected, the connection between the first edge portion 102 and the second edge portion 202 is tighter, and the excellent heat transfer performance of copper can improve the thermal conductivity of the temperature vapor chamber 100.

[0087] Figure 4a FIG. 1 is a schematic cross-sectional view of the first edge portion 102 and the second edge portion 202, with a cross section of 50 μm. Figure 4a It can be seen that the crystal structures of the first edge portion 102 and the second edge portion 202 are uniform, and the joint of the first edge portion 102 and the second edge portion 202 ( Figure 4a There are almost no bubbles or gaps.

[0088] Figure 4b The illustration of the first edge portion 102 and the second edge portion 202 is a 20 μm cross-sectional schematic diagram. Figure 4b The maximum grain size of the mid-section is 19 μm. Figure 4c The illustrations of the first edge portion 102 and the second edge portion 202 are 1 μm cross-sectional schematic diagrams. Figure 4c The maximum size of the grains in the cross section is 4 μm. There is no pore between the first edge portion 102 and the second edge portion 202, indicating that the connection between the first edge portion 102 and the second edge portion 202 has good airtightness.

[0089] In some embodiments, the grains with a grain size less than or equal to 50 μm in the first main body 101 account for 70% or more of the total grains. For example, the grains with a grain size less than or equal to 50 μm in the first main body 101 account for 70%, 75%, 80%, 85%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99% or 100% of the total grains. In this way, the first main body 101 also has excellent mechanical properties. Similarly, in some embodiments, the grains with a grain size less than or equal to 50 μm in the second main body 201 account for 70% or more of the total grains. In this way, the second main body 201 also has excellent mechanical properties.

[0090] In some embodiments, the pore size between the first edge portion 102 and the second edge portion 202 is less than or equal to 2 μm, for example, the pore size between the first edge portion 102 and the second edge portion 202 is 0 μm, 0.001 μm, 0.1 μm, 0.2 μm, 0.3 μm, 0.5 μm, 0.8 μm, 1 μm, 1.1 μm, 1.2 μm, 1.5 μm, 1.8 μm or 2 μm, etc. There is no pore or the pore is small between the first edge portion 102 and the second edge portion 202, so that the airtightness between the first edge portion 102 and the second edge portion 202 is excellent. In addition, the problem of uneven stress and low structural strength between the first edge portion 102 and the second edge portion 202 caused by the pores can be avoided.

[0091] Please return Figure 4a ,exist Figure 4a In the example, the material other than the material of the first metal layer 111 in the first edge portion 102 accounts for a small proportion. Exemplarily, the material of the first metal layer 111 includes a first metal material. The first edge portion 102 includes a first surface 103 and a second surface 104 arranged opposite to each other, and the second surface 104 is connected to the surface of the second edge portion 202. The first surface 103 is a surface away from the second edge portion 202. At a distance greater than or equal to 3 μm from the first surface 103 in the first edge portion 102, the mass percentage of the first metal material is greater than or equal to 95%. Figure 4aIn the embodiment, region G1 is located in the first edge portion 102, and the distance between each point in region G1 and the first surface 103 is greater than or equal to 3μm. The mass percentage of the first metal material in region G1 is greater than or equal to 95%, for example, the mass percentage of the first metal material in region G1 is 95%, 96%, 97%, 98%, 99.0%, 99.2%, 99.5%, 99.8%, 99.9%, 99.99% or 100%, etc. In this way, the first edge portion 102 is mainly composed of the first metal material, and other materials other than the first metal material are less or almost non-existent, so as to avoid other materials other than the first metal material affecting the connection performance between the first edge portion 102 and the second edge portion 202. Improve the problem of reduced heat dissipation performance of the temperature spreader due to the reaction of other materials other than the first metal material with the working fluid.

[0092] In the embodiment where the first metal layer 111 is a copper layer, the first metal material is copper. 70% of the copper grains in the region G1 have a size less than or equal to 50 μm, and the mass percentage of copper in the region G1 is greater than or equal to 95%. In other words, the copper grains in the G1 region are small and uniform, the content of non-copper materials is small, and the non-copper materials have little effect on the brittleness of the region G1, so that the mechanical properties of the G1 region are better.

[0093] By analogy, in an embodiment where the first metal layer 111 is a copper alloy layer, the first metal material is a copper alloy. The mass percentage of the copper alloy in the region G1 is greater than or equal to 95%. In an embodiment where the first metal layer 111 is an aluminum alloy layer, the first metal material is an aluminum alloy. The mass percentage of the aluminum alloy in the region G1 is greater than or equal to 95%.

[0094] Similarly, the material of the second edge portion 202 includes a second metal material. The second edge portion 202 includes a third surface 203 and a fourth surface 204 that are arranged opposite to each other, and the fourth surface 204 is connected to the surface of the first edge portion 102. The third surface 203 is a surface away from the first edge portion 102. At a distance greater than or equal to 3 μm from the third surface 203 in the second edge portion 202, the mass percentage of the second metal material is greater than or equal to 95%. Figure 4a In the embodiment, region G2 is located in the second edge portion 202, and the distance between each point in the region and the third surface 203 is greater than or equal to 3 μm. The mass percentage of the second metal material in region G2 is 95%, 96%, 97%, 98%, 99.0%, 99.2%, 99.5%, 99.8%, 99.9%, 99.99% or 100%, etc. Similar to the first edge portion 102, the mechanical properties in region G2 are better, and the problem of reduced heat dissipation performance of the vapor chamber due to the large amount of materials other than the second metal material can be improved.

[0095] In some embodiments, in the connection layer 20, at a distance greater than or equal to 3 μm from the third surface 203 and greater than or equal to 3 μm from the first surface 103, the mass percentage of the doping material is less than or equal to 5%, and the mass percentage of the doping material is, for example, 5%, 4%, 3%, 2%, 1%, 0.5%, 0.1%, 0.01% or 0. The aforementioned doping material is a material other than the second metal material and the first metal material. In this way, the connection layer 20 does not include solder, etc., which can avoid the damage caused by solder. Figure 3c The non-condensable gas problem shown in .

[0096] In some other embodiments, there may be a trace amount of doping material at the junction of the second surface 104 and the fourth surface 204, and the mass percentage of the doping material is less than or equal to 10%, for example, it may be 10%, 8%, 7%, 5%, 4%, 2%, 1%, 0.5%, 0.1% or 0.01%. The aforementioned doping material may be carbon. The doping material may be regarded as a crystal nucleus of the first metal material.

[0097] Exemplarily, a first groove 1221 is provided on a side of the first edge portion 102 facing the second edge portion 202, and a second groove 1222 is provided on a side of the second edge portion 202 facing the first edge portion 102. After the first edge portion 102 and the second edge portion 202 are connected to form a connecting layer 20, the first groove 1221 and the second groove 1222 together constitute an opening 122. The opening 122 is connected to the accommodating chamber 140. The opening 122 can be a liquid injection port or a vacuum port. For example, a working medium can be injected into the accommodating chamber 140 through the opening 122, and the accommodating chamber 140 can be vacuumized through the opening 122, and then the opening 122 is sealed, so that the accommodating chamber 140 is in a vacuum negative pressure state, and similarly, the working medium in the accommodating chamber 140 is also in a negative pressure state. The working medium in a negative pressure state is more easily vaporized after being heated. After the aforementioned opening 122 is sealed, the airtightness of the accommodating chamber 140 is less than or equal to 10 -5 Pa·m 3 / s, meeting the air tightness requirement of the temperature homogenizing plate 100.

[0098] The aforementioned connection layer 20 may not include the aforementioned opening 122. The present embodiment of the application does not limit the process of sealing the opening 122. For example, the opening 122 may be sealed by ultrasonic welding. It is understood that in other embodiments, the aforementioned opening 122 may be set at other positions of the temperature homogenizing plate 100.

[0099] Exemplarily, the accommodating chamber 140 is filled with a working fluid. The working fluid is also called a cooling medium. Exemplarily, the material of the working fluid includes at least one of deionized water, acetone, ethanol and fluorocarbons. When heat is transferred to the accommodating chamber 140 through the first cover plate 110 or the second cover plate 120. The working fluid in a negative pressure state vaporizes after being heated, and the vaporized working fluid flows to an area with a lower temperature, condenses after being cooled, and releases heat, and returns under the capillary force of the capillary structure 130, thereby realizing a heat transfer cycle. In an embodiment in which the materials of the first metal layer 111 and the second metal layer 121 are both copper, deionized water, ethanol and fluorocarbons do not chemically react with copper, and copper has little effect on the thermal cycle of the aforementioned working fluid.

[0100] The embodiment of the present application does not limit the shape of the temperature equalizing plate 100. For example, the temperature equalizing plate 100 may be square, circular, oval or irregular in shape. Obviously, the shape of the first cover plate 110 and the shape of the second cover plate 120 are set according to the shape of the temperature equalizing plate 100. The first cover plate 110 and the second cover plate 120 may also be square, circular, oval or irregular in shape. The shape of the first metal layer 111 is the same as that of the first cover plate 110. The shape of the second metal layer 121 is the same as that of the second cover plate 120. The embodiment of the present application does not limit this.

[0101] Accordingly, the shapes of the first body portion 101 and the second body portion 201 are set according to the shape of the accommodating cavity 140. The first edge portion 102 is arranged around the periphery of the first body portion 101, and the shape of the first edge portion 102 is set according to the shape of the first body portion 101. Similarly, the shape of the second edge portion 202 is set according to the shape of the second body portion 201.

[0102] The embodiment of the present application does not limit the thickness of the first cover plate 110, and the thickness of the first cover plate 110 is the dimension of the first cover plate 110 along the z direction. Exemplarily, the thickness of the first cover plate 110 is 0.01 mm-0.5 mm, for example, the thickness of the first cover plate 110 can be 0.01 mm, 0.05 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm or 0.5 mm, etc.

[0103] The embodiment of the present application does not limit the thickness of the second cover plate 120. Exemplarily, the thickness of the second cover plate 120 is 0.01mm-0.5mm. It is understandable that the embodiment of the present application does not limit the ratio of the thickness of the first cover plate 110 and the second cover plate 120. In some embodiments, the thickness of the first cover plate 110 is equal to (1±0.2) times the thickness of the second cover plate 120. For example, the thickness of the first cover plate 110 is 0.8 times, 0.9 times, 0.95 times, 1 times, 1.05 times, 1.1 times, 1.15 times or 1.2 times the thickness of the second cover plate 120. In this way, the difference in thickness between the first cover plate 110 and the second cover plate 120 is small, and the difference in stress between the first edge portion 102 and the second edge portion 202 is small. In the usage scenario where the temperature homogenizing plate 100 is bent, the bending has little effect on the connection performance of the first edge portion 102 and the second edge portion 202 , and effectively improves the problem of poor toughness, delamination or tearing between the first edge portion 102 and the second edge portion 202 .

[0104] It is understood that in other embodiments, the thickness ratio of the first cover plate 110 to the second cover plate 120 may not be within the above range. For example, the thickness of the first cover plate 110 is 0.4 times, 1.5 times, or 2 times the thickness of the second cover plate 120. The setting can be made according to the usage scenario of the temperature homogenizing plate 100.

[0105] As described above, the first cover plate 110 includes a first metal layer 111, and the second cover plate 120 includes a second metal layer 121. Obviously, in the embodiment where the first cover plate 110 only includes the first metal layer 111, the thickness of the first cover plate 110 is the thickness of the first metal layer 111. Similarly, in the embodiment where the second cover plate 120 only includes the second metal layer 121, the thickness of the second cover plate 120 is the thickness of the second metal layer 121. In the embodiment of the present application, the first cover plate 110 is not limited to the first metal layer 111. The second cover plate 120 is also not limited to the second metal layer 121.

[0106] Figure 5a for Figure 2a Schematic diagram of a cross-section at DD. Figure 5a In the embodiment, the first cover plate 110 includes only the first metal layer 111 , and the second cover plate 120 includes only the second metal layer 121 . Figure 5a In the embodiment, the thickness of the first metal layer 111 is equal to the thickness of the first cover plate 110 . The thickness of the second metal layer 121 is equal to the thickness of the second cover plate 120 .

[0107] Figure 5b for Figure 2a Schematic diagram of another cross-section at DD. Figure 5bIn the embodiment, the first cover plate 110 further includes a support layer 112, and the support layer 112 is connected to a side of the first metal layer 111 away from the second metal layer 121. The provision of the support layer 112 can increase the thickness of the first cover plate 110. In addition, the mechanical strength and thickness of the support layer 112 can be set to adjust the strength and thickness of the first cover plate 110.

[0108] The embodiment of the present application does not limit the material of the support layer 112. Exemplarily, the material of the support layer 112 includes at least one of copper and its alloys, titanium and its alloys, aluminum and its alloys, magnesium and its alloys, and steel. The embodiment of the present application does not limit the carbon content, iron content, and trace element content in the aforementioned steel. It can be set according to the type of steel. For example, the steel can be austenitic stainless steel such as 201 steel, 304 steel, 316 steel, or 310 steel, or ferritic stainless steel such as 430 steel or 446 steel. The following text takes the material of the first metal layer 111 as copper as an example for description. In this way, the material selection of the support layer 112 is more.

[0109] In some embodiments, the material of the support layer 112 includes steel with a nitrogen content greater than 5%, and the steel with a nitrogen content greater than 5% can improve the strength of the first cover plate 110, which is beneficial to improving the strength of the vapor chamber. In this way, the vapor chamber can be used to carry electronic components in electronic devices, or the vapor chamber can be regarded as part of the middle frame.

[0110] In some embodiments, the grains with a grain size less than or equal to 50 μm in the support layer 112 of at least 5 mm in length account for 70% of the total grains. Similarly, the length of the support layer 112 is the dimension of the support layer 112 in a direction perpendicular to the z-direction. In this way, the material inside the support layer 112 is uniform, and the internal stress of the support layer 112 is small. In other embodiments, the grain size in the support layer 112 may not be subject to the aforementioned restrictions.

[0111] In some embodiments, the material of the support layer 112 is the same as the material of the first metal layer 111. In other embodiments, the material of the support layer 112 may be different from the material of the first metal layer 111. For example, in some embodiments, the material of the first metal layer 111 is copper, and the material of the support layer 112 is stainless steel (such as 304 steel or 316 steel). The copper layer isolates the accommodating cavity 140 and the stainless steel to prevent some elements in the stainless steel (such as carbon, nickel, nitrogen, etc.) from entering the accommodating cavity 140 and generating non-condensable gas with the working fluid, thereby reducing the heat dissipation performance of the temperature equalizing plate 100. In addition, the density of copper is 8.8 g / cm 3 , the density of stainless steel is 7.9g / cm 3 The stainless steel layer can reduce the weight of the first cover plate 110. The stainless steel has a relatively high hardness, which can improve the supporting performance of the first cover plate 110.

[0112] In the embodiment of the present application, the support layer 112 covers the entire first metal layer 111 on a side away from the second metal layer 121. In other words, the vertical projection of the support layer 112 on the surface of the first metal layer 111 overlaps the surface of the first metal layer 111. In other embodiments, the support layer 112 may only cover a portion of the first metal layer 111.

[0113] The embodiment of the present application does not limit the connection method of the support layer 112 and the first metal layer 111. Exemplarily, the support layer 112 and the first metal layer 111 are formed by cold rolling.

[0114] Figure 5b In the embodiment, the second cover plate 120 may also include a support layer 112. In other words, the temperature homogenizing plate includes two support layers 112, one support layer 112 is located in the first cover plate 110, and the other support layer 112 is located in the second cover plate 120. The support layer 112 in the second cover plate 120 is connected to the side of the second metal layer 121 facing away from the first metal layer 111. The parameters such as material and thickness of the support layer 112 in the second cover plate 120 and the support layer 112 in the first cover plate 110 may be the same or different.

[0115] Figure 5b In the example of, the thickness of the first metal layer 111 can be much smaller than the thickness of the first cover plate 110. Exemplarily, the thickness of the first metal layer 111 is 5 μm-80 μm. In some embodiments, the thickness of the first metal layer 111 can be 5 μm-10 μm. For example, the thickness of the first metal layer 111 can be 5 μm, 6 μm, 7 μm, 8 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 60 μm, 70 μm or 80 μm, etc. In this way, because 70% or more of the grain sizes in the first edge portion 102 are less than or equal to 50μm, even if the thickness of the first metal layer 111 is only 5μm, the connection performance at the connection between the first edge portion 102 and the second edge portion 202 is better, and the first metal layer 111 can better isolate substances that may produce non-condensable gases from entering the accommodating cavity 140, so that the temperature spreader has excellent heat dissipation performance.

[0116] In some embodiments, in order to further reduce the density of the temperature vapor chamber, the temperature vapor chamber may include a polymer material.

[0117] Figure 5c for Figure 2a Schematic diagram of another cross-section at DD. Figure 5cIn the embodiment, the first cover plate 110 further includes a polymer layer 113, and the polymer layer 113 is connected to a side of the first metal layer 111 away from the second metal layer 121. The polymer layer 113 and the first metal layer 111 are stacked along the z direction. The polymer layer 113 can reduce the weight of the first cover plate 110, thereby reducing the weight of the entire temperature averaging board, which is conducive to lightweighting the temperature averaging board and the electronic device including the temperature averaging board.

[0118] In addition, the uniform and small-sized grains in the first edge portion 102 can prevent the polymer layer 113 from penetrating the first edge portion 102 and affecting the connection performance between the first edge portion 102 and the second edge portion 202. In addition, the uniform and small-sized grains in the first metal layer 111 can prevent the polymer layer 113 from entering the accommodating cavity 140, and prevent the polymer layer 113 from releasing non-condensable gas in the accommodating cavity 140 to affect the heat dissipation performance of the temperature vapor chamber 100.

[0119] Exemplarily, the material of the polymer layer 113 includes polyimide (PI), polypropylene (PP), polytetrafluoroethylene (PTFE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), polyethylene (PE), polypropylene carbonate (PPC), polyviny chloride (PVC), polyvinylidene chloride (PVdC), polystyrene (PS), polyamide (PA), etc.

[0120] In the embodiment of the present application, the polymer layer 113 covers the entire side of the first metal layer 111 away from the second metal layer 121. In other words, the vertical projection of the polymer layer 113 on the surface of the first metal layer 111 overlaps with the surface of the first metal layer 111.

[0121] Figure 5c In the embodiment, the second cover plate 120 may also include the polymer layer 113. Alternatively, the second cover plate 120 may include Figure 5b The support layer 112 is described in the examples.

[0122] Figure 5d for Figure 2a A schematic cross-sectional view of another DD. Figure 5d In the embodiment, the first cover plate 110 includes a first metal layer 111, a polymer layer 113, and a support layer 112 which are sequentially stacked along the z direction. The support layer 112 can provide excellent support strength for the first cover plate 110, the polymer layer 113 can reduce the weight of the first cover plate 110, and the first metal layer 111 prevents the formation of non-condensable gas in the accommodation cavity 140, which leads to a decrease in the heat dissipation performance of the temperature equalizing plate. In addition, the connection between the first metal layer 111 and the second metal layer 121 also enables the connection between the first cover plate 110 and the second cover plate 120 to have excellent connection performance.

[0123] Figure 5d In the embodiment, the polymer layer 113 is located between the first metal layer 111 and the support layer 112. In other embodiments, the support layer 112 may be located between the polymer layer 113 and the first metal layer 111. In other words, the first metal layer 111, the support layer 112 and the polymer layer 113 are sequentially stacked along the z direction.

[0124] Figure 5d In the embodiment, the second cover plate 120 may also include a polymer layer 113 and a first metal layer 111. It is understood that in other embodiments, the second cover plate 120 may also be Figure 5a , Figure 5b or Figure 5c The structure of the example.

[0125] The embodiment of the present application does not limit the number of support layers 112 and the number of polymer layers 113 in the first cover plate 110. For example, the number of support layers 112 may be one, two, three or more. The number of polymer layers 113 may be one, two, three or more. In the embodiment where the number of support layers 112 is multiple, the parameters such as the material and size of the multiple support layers 112 may be the same or different. In addition, in the embodiment where the support layer 112 and the polymer layer 113 are both multi-layered, the embodiment of the present application does not limit the arrangement of the polymer layer 113 and the support layer 112. For example, a support layer 112 may be provided between two adjacent polymer layers 113, or two or three support layers 112 may be provided between two adjacent polymer layers 113.

[0126] Please return to Figure 2b The capillary structure 130 is located in the accommodating cavity 140 and connected to the first main body 101 .

[0127] The present embodiment does not limit the material of the capillary structure 130. For example, the material of the capillary structure 130 includes at least one of aluminum and its alloys, stainless steel, titanium and its alloys, carbon fiber, graphene, graphite, copper and its alloys, and polymer materials.

[0128] The embodiments of the present application do not limit the connection method between the capillary structure 130 and the first main body 101. In some embodiments, the capillary structure 130 and the first main body 101 are connected as an integrally formed part. For example, the first main body 101 and the capillary structure 130 are formed on the first main body 101 by etching or laser processing. In this way, the connectivity between the capillary structure 130 and the first main body 101 is excellent, and the capillary structure 130 and the first main body 101 are not easy to separate. In the scenario where the temperature equalizing plate 100 is bent, the integrally formed first main body 101 and the capillary structure 130 can effectively reduce the friction generated by the relative movement of the capillary structure 130 and the first main body 101 during the bending of the temperature equalizing plate 100. If the first main body 101 is bent, the capillary structure 130 and the first main body 101 are not easy to delaminate or tear.

[0129] In other embodiments, the capillary structure 130 and the first body portion 101 are connected by heat treatment. For example, in an embodiment where the capillary structure 130 is a mesh structure, foamed metal or metal powder, the capillary structure 130 and the first body portion 101 are connected by sintering or heat treatment.

[0130] In some embodiments of the present application, the distance between the capillary structure 130 and the inner edge of the first edge portion 102 is 1 mm to 3 mm. For example, the distance between the capillary structure 130 and the inner edge of the first edge portion 102 is 1 mm, 2 mm or 3 mm, etc. The inner edge of the aforementioned first edge portion 102 is the edge of the connection between the first edge portion 102 and the first main body portion 101. Alternatively, the inner edge of the aforementioned first edge portion 102 is the edge of the area where the first edge portion 102 and the second edge portion 202 are directly connected and close to the accommodating cavity 140. The distance between the capillary structure 130 and the inner edge of the first edge portion 102 is: the distance between the capillary structure 130 and the inner edge of the first edge portion 102 along the direction perpendicular to the z direction. Since the first edge portion 102 and the second edge portion 202 are connected, it is obvious that the distance between the inner edges of the capillary structure 130 and the second edge portion 202 is the same as the distance between the capillary structure 130 and the inner edge of the first edge portion 102. The distance between the capillary structure 130 and the inner edge of the first edge portion 102 is within the above range, and the connection process between the first edge portion 102 and the second edge portion 202 has little effect on the capillary structure 130, thereby avoiding the connection process from affecting the capillary force of the portion of the capillary structure 130 near the first edge portion 102.

[0131] Figure 2bIn the embodiment, the temperature equalizer 100 also includes: a plurality of protrusions 150, and the plurality of protrusions 150 are arranged at intervals in the accommodating cavity 140. One ends of the plurality of protrusions 150 are connected to the second main body 201, and the other ends of the plurality of protrusions 150 are free ends. The plurality of protrusions 150 can increase the surface area in the accommodating cavity 140, increase the contact area between the working fluid and the accommodating cavity 140, and make it easier for the working fluid to adhere to the accommodating cavity 140. Secondly, the protrusions 150 have a drainage effect on the working fluid in a gas state. In addition, the protrusions 150 also have a drainage effect, and the working fluid attached to the surface of the protrusions 150 can flow and converge along the surface of the protrusions 150, which is beneficial to shorten the time of the thermal cycle of the working fluid and increase the heat dissipation performance of the temperature equalizer.

[0132] The embodiments of the present application do not limit the positional relationship between the protrusion 150 and the capillary structure 130. In some embodiments, the end of the protrusion 150 away from the second main body 201 is in contact with the end of the capillary structure 130 away from the first main body 101. In this way, the working fluid attached to the protrusion 150 flows to the free end of the protrusion 150 and then enters the capillary structure 130 for circulation under the action of the capillary structure 130. In addition, the end of the protrusion 150 is in contact with the end of the capillary structure 130, which can reduce the thickness of the temperature equalizing plate. It is understandable that in other embodiments, there may be a gap between the end away from the second main body 201 and the end of the capillary structure 130 away from the first main body 101.

[0133] The embodiment of the present application does not limit the arrangement of the plurality of protrusions 150. In some embodiments, the plurality of protrusions 150 are arranged in an orderly manner, for example, in a circular row or a rectangular array distributed on the second main body 201. In other embodiments, the plurality of protrusions 150 can be arranged in an unordered manner. In addition, the size of each protrusion 150 along the z direction can be the same or different, and the embodiment of the present application does not limit this.

[0134] In some embodiments, the material of the protrusion 150 is the same as that of the second metal layer 121. The protrusion 150 does not chemically react with the working medium in the accommodation cavity 140 to generate non-condensable gas, thereby preventing the non-condensable gas from affecting the heat dissipation performance of the temperature vapor chamber.

[0135] The embodiment of the present application does not limit the connection method between the protrusion 150 and the second main body 201. For example, the protrusion 150 and the second main body 201 are connected to form an integral molded part. For example, Figure 2b In the embodiment, the protrusion 150 and the second main body 201 are formed on the second main body 201 by etching or laser processing. The connection performance between the protrusion 150 and the second main body 201 is excellent. In addition, the process of etching or laser processing to form the protrusion 150 has little effect on the surface shape of the second main body 201 away from the protrusion 150. The surface of the second main body 201 away from the protrusion 150 is relatively flat. Figure 2bIn the embodiment, the surface e1 of the second cover plate 120 facing away from the protrusion 150 is a plane.

[0136] In some embodiments, a reinforcing rib may be provided between the first cover plate 110 and the second cover plate 120, the reinforcing rib being located in the accommodating cavity 140, one end of the reinforcing rib being connected to the first cover plate 110, and the other end of the reinforcing rib being connected to the second cover plate 120. The reinforcing rib may increase the structural strength of the temperature vapor chamber 100 and improve the supporting performance of the temperature vapor chamber 100.

[0137] Figure 6a A schematic diagram of the internal structure of another temperature homogenizing plate 100 provided in an embodiment of the present application. Figure 6a In the embodiment, the protrusion 150 and the second main body 201 are formed by stamping. During the stamping process, the surface of the second main body 201 away from the protrusion 150 is changed by the stamping. For example, Figure 6a The surface of the second main body portion 201 facing away from the protrusion 150 has a plurality of pits and is an uneven plane.

[0138] In the embodiment where the second cover plate 120 includes the support layer 112 , the support layer 112 and the second body portion 201 are stamped together so that the second body portion 201 is formed on the inner wall of the accommodating cavity 140 . Figure 6a In the embodiment, the surface e2 of the second cover plate 120 facing away from the protrusion 150 has a recess.

[0139] It is understandable that, in some embodiments of the present application, the protrusion 150 is not necessary, and the temperature vapor chamber 100 may not be provided with the protrusion 150 .

[0140] As mentioned above, the temperature equalizer 100 can be connected to the printed circuit board 13 of the electronic device 10. Exemplarily, the first cover plate 110 of the temperature equalizer 100 is closer to the printed circuit board 13 than the second cover plate 120. For example, the surface of the first cover plate 110 facing away from the second cover plate 120 is in contact with the printed circuit board 13, and the second cover plate 120 is located on the side of the temperature equalizer 100 away from the printed circuit board 13. When the electronic device 10 is working, the heat on the printed circuit board 13 is transferred to the accommodating cavity 140 through the first cover plate 110, and the working fluid in the accommodating cavity 140 absorbs heat and vaporizes. After reaching the inner surface of the second cover plate 120, the working fluid in the accommodating cavity 140 releases heat and liquefies. Under the action of the protrusion 150 and the capillary structure 130, the working fluid returns to the inner surface of the first cover plate 110 for the next thermal cycle.

[0141] In the embodiment of the present application, the first cover plate 110 and the printed circuit board 13 are not limited to being directly connected. For example, the first cover plate 110 and the printed circuit board 13 may be indirectly connected through other structures. For example, the first cover plate 110 and the printed circuit board 13 are connected through a thermal conductive adhesive layer. In some embodiments, a graphite layer may be further provided between the first cover plate 110 and the printed circuit board 13.

[0142] As described above, in the embodiment where the temperature homogenizing plate 100 and the printed circuit board 13 are located on opposite sides of the middle frame 14, part of the temperature homogenizing plate 100 passes through the middle frame 14 and is connected to the printed circuit board 13, or part of the printed circuit board 13 passes through the middle frame 14 and is connected to the temperature homogenizing plate 100.

[0143] In some embodiments, there is a high heat area on the printed circuit board 13. When the electronic device 10 is working, the temperature of the high heat area is higher than the other areas on the printed circuit board 13. Part of the temperature plate 100 passes through the middle frame 14 and fits the high heat area. Alternatively, the high heat area passes through the middle frame 14 and fits the temperature plate 100. The working fluid in the temperature plate 100 absorbs the heat of the high heat area and dissipates the heat.

[0144] For example, Figure 1a As shown, a through hole 17 is provided on the middle frame 14, and the through hole 17 penetrates the middle frame 14 along the thickness direction of the middle frame 14. The first cover plate 110 (as shown in FIG. 5) is connected to the printed circuit board 13 through the through hole 17. For example, the first cover plate 110 is connected to the high heat zone of the printed circuit board 13 through the through hole 17. In this way, it is beneficial to reduce the total thickness of the middle frame 14 and the temperature equalizing plate 100, improve the integration of the electronic device 10, and facilitate the miniaturization of the electronic device 10. In addition, the temperature equalizing plate 100 can be regarded as a part of the middle frame 14, and the temperature equalizing plate 100 provides supporting strength for supporting structures such as the display screen 12, so that the temperature equalizing plate 100 can take into account multiple functions.

[0145] The embodiment of the present application does not limit the shape of the through hole 17. For example, it can be circular, square, oval or irregular, etc. The position of the through hole 17 can be set according to the position of the aforementioned high heat zone, and the embodiment of the present application does not limit this.

[0146] In some embodiments, the through hole 17 has a relatively large size, for example, the through hole 17 is close in size to the vapor chamber 100 . The vapor chamber 100 is connected to the through hole 17 , and the vapor chamber 100 can be regarded as a part of the middle frame 14 .

[0147] Figure 1b This is a schematic diagram of the structure of the middle frame 14 and the temperature plate 100 provided in the embodiment of the present application. Figure 1b The inner wall of the through hole 17 has a stepped surface 171, the temperature evaporating plate 100 is located in the through hole 17, and the outer periphery of the temperature evaporating plate 100 is supported on and connected to the stepped surface 171. For example, the outer periphery of the temperature evaporating plate 100 is bonded, welded, or screwed to the stepped surface 171.

[0148] In this way, the temperature plate 100 can replace part of the middle frame 14 and provide supporting performance. The integration of the middle frame 14 and the temperature plate 100 can be increased. The volume occupied by the middle frame 14 and the temperature plate 100 can be reduced. The temperature plate 100 can take into account both the heat dissipation and support functions. The size of the middle frame 14 and the temperature plate 100 along the z direction can be reduced, for example, the sum of the thickness of the middle frame 14 and the temperature plate 100 along the z direction can be reduced by 0.1 mm or more, and the integration of the middle frame 14 and the temperature plate 100 can be improved.

[0149] Figure 6b A schematic diagram of the internal structure of another temperature homogenizing plate 100 provided in an embodiment of the present application. Figure 6b and Figure 2a The difference is that Figure 6b The second cover plate 120 is provided with a convex portion 160, and the convex portion 160 is convexly arranged in a direction away from the first cover plate 110. In the embodiment where a portion of the temperature plate 100 passes through the middle frame 14 and the printed circuit board 13 for connection, the convex portion 160 can pass through the middle frame 14 and the printed circuit board 13 for connection. For example, the convex portion 160 passes through Figure 1a The through hole 17 of the middle frame 14 shown in FIG. 1 is connected to the printed circuit board 13 .

[0150] It is understandable that the convex portion 160 may be provided on the first cover plate 110 . Alternatively, the convex portion 160 may be provided on both the first cover plate 110 and the second cover plate 120 .

[0151] The temperature homogenizing plate 100 may be connected to the remaining structures of the electronic device 10 in the same manner as that of the printed circuit board 13 , which will not be described in detail herein.

[0152] The present application embodiment does not limit the process of the temperature homogenizing plate 100. Figure 7a A partial manufacturing process of the temperature vapor chamber 100 is illustrated.

[0153] Figure 7a A process flow chart of the temperature homogenizing plate 100 provided in the embodiment of the present application. Figure 7a The preparation process of the temperature homogenizing plate 100 includes:

[0154] s1. Provide Figure 2b The first cover plate 110 , the second cover plate 120 and the capillary structure 130 are shown in FIG.

[0155] The structures and materials of the first cover plate 110, the second cover plate 120 and the capillary structure 130 refer to the aforementioned Figure 2b . I will not repeat it here.

[0156] s2. Such as Figure 7bAs shown, the first cover plate 110 , the capillary structure 130 , and the second cover plate 120 which are stacked in sequence are subjected to a first heat treatment to connect the first edge portion 102 and the second edge portion 202 .

[0157] Execution completed Figure 7a The structure after s2 is as follows Figure 2b The first edge portion 102 and the second edge portion 202 are connected to form a connection layer 20. The structure of the connection layer 20 is described above and will not be described again.

[0158] Wherein, the temperature of the first heat treatment in s2 is 150°C-400°C, the pressure is greater than or equal to 30MPa (megapascals), and the time is greater than or equal to 30min (minutes). In some embodiments, the pressure of the first heat treatment is 30MPa-200MPa, and the time is 30min-100min. Exemplarily, the temperature of the first heat treatment can be 150°C, 170°C, 180°C, 190°C, 200°C, 210°C, 220°C, 240°C, 260°C, 270°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 380°C or 400°C. The pressure of the first heat treatment can be 30MPa, 40MPa, 50MPa, 60MPa, 70MPa, 80MPa, 90MPa, 100MPa, 110MPa, 120MPa, 140MPa, 150MPa, 160MPa, 170MPa, 180MPa, 190MPa, 200MPa, 250MPa, 350MPa or 500MPa, etc. The time of the first heat treatment can be 30min, 40min, 50min, 60min, 70min, 80min, 90min, 100min, 130min, 150min, 180min or 300min, etc.

[0159] Exemplarily, the first heat treatment of the first cover plate 110 , the capillary structure 130 , and the second cover plate 120 is performed in a container, such as a sintering furnace.

[0160] Illustratively, during the first heat treatment, the first cover plate 110 , the capillary structure 130 , and the second cover plate 120 are all treated in a protective atmosphere, wherein the protective gas may be nitrogen or helium, for example.

[0161] It is understood that the embodiment of the present application is not limited to the temperature being constant during the first heat treatment. For example, the temperature change during the first heat treatment is within 15° C. Similarly, the pressure change during the first heat treatment can be within 10 MPa.

[0162] Figure 7aIn the example, after the first heat treatment, the first edge portion 102 and the second edge portion 202 can be connected. After the connection, the first main body portion 101 and the second main body portion 201 are jointly arranged to form the accommodating cavity 140. The temperature of the first heat treatment is relatively low, which effectively improves the problem of deformation and oxidation of the first cover plate 110 and the second cover plate 120 caused by high temperature.

[0163] In addition, due to the low temperature, the first heat treatment process has a low impact on the hardness and yield strength of the first cover plate 110 and the second cover plate 120. For example, after the first cover plate 110 and the second cover plate 120 are connected, the hardness of the first cover plate 110 decreases by less than or equal to 20%, and the yield strength decreases by less than or equal to 20%; similarly, after the first cover plate 110 and the second cover plate 120 are connected, the hardness of the second cover plate 120 decreases by less than or equal to 20%, and the yield strength decreases by less than or equal to 20%.

[0164] Secondly, the higher pressure during the first heat treatment process causes the atoms between the first edge portion 102 and the second edge portion 202 to diffuse and mix, forming a connection layer 20 with a relatively strong bonding force. Moreover, more than 70% of the grains in the connection layer 20 have a size less than 50 μm, the grains in the connection layer 20 are uniform and fine, the internal stress of the connection layer 20 is low, and it is not easy to delaminate or crack.

[0165] Furthermore, in an embodiment where the material of the support layer 112 is stainless steel, the temperature of the first heat treatment is relatively low, the diffusion distance of trace elements (such as aluminum) in the stainless steel is relatively short, and less non-condensable gas is generated when trace elements enter the accommodating cavity 140, thereby improving the heat dissipation performance of the temperature equalizer.

[0166] The first cover plate 110 includes a polymer layer 113 (such as Figure 5d In the embodiment shown in FIG. 1 , the temperature of the first heat treatment is relatively low, which effectively improves the cracking, blackening or delamination of the polymer material in the polymer layer 113 caused by high temperature. The same is true for the embodiment in which the second cover plate 120 includes a polymer layer.

[0167] In addition, even if the thickness of the first metal layer 111 is relatively small, for example, 5 μm, since the temperature of the first heat treatment is relatively low, the first heat treatment has little effect on the physical properties of the thinner first metal layer 111, such as hardness.

[0168] Furthermore, the temperature of the first heat treatment is relatively low, and the micro-nano structures (such as barbs or pores) on the surface of the capillary structure 130 are not easy to collapse or melt during the first heat treatment. The better capillary force of the capillary structure 130 can also improve the heat dissipation performance of the temperature vapor chamber.

[0169] In some embodiments, if there is dust or impurities on the surfaces of the first cover plate 110 and the second cover plate 120, the first cover plate 110 and the second cover plate 120 may be cleaned to remove the impurities or dust before performing the cleaning. Figure 7a s1 in.

[0170] For example, in an embodiment where the surface of the first cover plate 110 or the surface of the second cover plate 120 includes an oxide layer such as copper oxide, when performing Figure 7a Before step s1 , an oxide layer on the surface of the first cover plate 110 or the surface of the second cover plate 120 may be removed.

[0171] It is understood that in some embodiments, after executing Figure 7a After step s2, the process may further include injecting a working medium into the receiving chamber 140, evacuating the receiving chamber 140 so that the receiving chamber 140 is in a vacuum negative pressure state, and sealing the opening 122 of the receiving chamber 140 (eg, Figure 2b shown).

[0172] In the embodiment where the temperature homogenizing plate 100 includes the protrusion 150, the protrusion 150 may be provided on the first cover plate 110. The protrusion 150 may be provided in a manner including, but not limited to, stamping, laser processing or etching.

[0173] In this embodiment, the capillary structure 130 and the first main body 101 of the first cover plate 110 may be in a connected state. In some embodiments, the capillary structure 130 and the first main body 101 of the first cover plate 110 may be in a non-connected state. Figure 7a In the embodiment, s3 connects the capillary structure 130 and the first main body 101 of the first cover plate 110. In other words, Figure 7a S3 in the figure is an optional process. If the capillary structure 130 and the first cover plate 110 are in a non-connected state, after S1 and before S2, the following steps are further included:

[0174] s3. Such as Figure 7c As shown, the first cover plate 110 and the capillary structure 130 are subjected to a second heat treatment to connect the capillary structure 130 to the first main body 101 .

[0175] For example, in an embodiment where the capillary structure 130 is a mesh structure, foamed metal or metal powder, after executing step s3, the capillary structure 130 is connected to the first main body 101. After executing step s3, the structure of the first cover plate 110 and the capillary structure 130 is as follows: Figure 7b shown.

[0176] Wherein, the temperature of the second heat treatment is 150°C-400°C, the pressure is greater than or equal to 5MPa, and the time is greater than or equal to 30min. In some embodiments, the pressure of the second heat treatment is 5MPa-200MPa, and the time is 30min-100min. Exemplarily, the temperature of the second heat treatment can be 150°C, 170°C, 180°C, 190°C, 200°C, 210°C, 220°C, 240°C, 260°C, 270°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 380°C or 400°C. The pressure of the second heat treatment can be 5MPa, 10MPa, 20MPa, 30MPa, 40MPa, 50MPa, 70MPa, 80MPa, 100MPa, 110MPa, 120MPa, 150MPa, 160MPa, 170MPa, 180MPa, 200MPa, 250MPa, 350MPa or 500MPa, etc. The time of the second heat treatment can be 30min, 40min, 50min, 60min, 70min, 80min, 90min, 100min, 130min, 150min, 180min or 280min, etc.

[0177] Exemplarily, the second heat treatment of the first cover plate 110 and the second cover plate 120 is performed in a container, such as a sintering furnace. The embodiment of the present application does not limit the temperature to remain unchanged during the second heat treatment. Exemplarily, the temperature change during the first heat treatment is within 15°C. Similarly, the pressure change during the second heat treatment can be within 10MPa.

[0178] Illustratively, during the second heat treatment process, the first cover plate 110 and the capillary structure 130 are both subjected to a protective atmosphere, wherein the protective gas may be, for example, nitrogen or helium.

[0179] Similar to the aforementioned first heat treatment, the temperature of the second heat treatment is relatively low, and the second heat treatment process has a relatively small impact on the capillary structure 130 and the first cover plate 110, so that the first cover plate 110 can maintain good hardness and yield strength after the second heat treatment. During the second heat treatment, the amount of grain growth in the first cover plate 110 is relatively small, and the elements on the side of the first cover plate 110 away from the capillary structure 130 are not easy to diffuse to the side close to the capillary structure 130. During the second heat treatment of the capillary structure 130, the micro-nano structure on the capillary structure 130 is not easy to collapse or deform, and can still maintain a good capillary force, so that the heat dissipation performance of the temperature vapor chamber is better.

[0180] In some embodiments of the present application, nanoparticles may be arranged between the first edge portion 102 and the second edge portion 202 before executing s2 to promote atomic diffusion between the surface of the first edge portion 102 and the surface of the second edge portion 202, so that the grain growth at the connection between the first edge portion 102 and the second edge portion 202 is faster, and the connection between the first edge portion 102 and the second edge portion 202 is completed in a shorter time.

[0181] In some embodiments, in order to rapidly fuse the grains on the surfaces of the first edge portion 102 and the second edge portion 202, the process may further include:

[0182] s4. Figure 7d As shown, the first cover plate 110 , the capillary structure 130 and the second cover plate 120 are stacked, and nanoparticles are filled between the first edge portion 102 and the second edge portion 202 .

[0183] The nanoparticles help the grains on the surface of the first edge portion 102 and the second edge portion 202 to fuse quickly during the first treatment process. The nanoparticles act as grain nuclei, which helps to shorten the nucleation time on the surface of the first edge portion 102 and the second edge portion 202 and shorten the formation time of the connection layer.

[0184] Filling nanoparticles between the first edge portion 102 and the second edge portion 202 may be, for example, placing nanoparticles on the surface of the first edge portion 102 facing the second edge portion 202 ; or placing nanoparticles on the surface of the second edge portion 202 facing the first edge portion 102 .

[0185] The present application embodiment does not limit the material of the nanoparticles. For example, the material of the nanoparticles may include at least one of titanium and its alloys, aluminum and its alloys, copper and its alloys, carbon, magnesium and its alloys. During the first heat treatment process, the nanoparticles can act as crystal nuclei of crystal grains to promote grain growth, shortening the time for the first edge portion 102 and the second edge portion 202 to connect.

[0186] Exemplarily, the particle size of the nanoparticles is less than or equal to 10 μm. In some embodiments, the particle size of the nanoparticles can be 50 nm-5 μm. For example, the particle size of the nanoparticles can be 50 nm, 100 nm, 200 nm, 400 nm, 500 nm, 700 nm, 800 nm, 1 μm, μm, 2 μm, 3 μm, 4 μm or 5 μm, etc.

[0187] It is understandable that the preparation process of the temperature homogenizing plate 100 provided in the embodiment of the present application is not limited to the above Figure 7a The process shown in the figure can be formed by other processes.

[0188] The temperature equalizing plate of the embodiment of the present application may include a metal cover plate and a connecting layer, which is mainly composed of metal grains with relatively small grain size, and may have high strength and high stiffness characteristics on a macro scale; it may also include some non-metallic materials with high flexibility to meet the heat dissipation characteristics requirements of different electronic products.

[0189] In the description of this specification, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application is described in detail with reference to the above embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the above embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A temperature equalizing plate, characterized in that: The temperature homogenizing plate comprises: A first cover plate, comprising a first metal layer, wherein the first metal layer comprises a first main body portion and a first edge portion surrounding the first main body portion; a second cover plate, comprising a second metal layer, wherein the second metal layer comprises a second main body portion and a second edge portion arranged around the second main body portion; a surface of the first edge portion and a surface of the second edge portion are connected to form a connection layer, and the first main body portion and the second main body portion jointly form a receiving cavity; and A capillary structure, located in the accommodating cavity and connected to the first main body; The connecting layer having a length of at least 5 mm along a direction perpendicular to the thickness direction of the connecting layer is the first part; the first part satisfies the following conditions: The number of grains with a grain size less than or equal to 50 μm accounts for 70% or more of the total number of grains in the first part.

2. The temperature equalizing plate according to claim 1, characterized in that: The entire connection layer satisfies the following conditions: The number of grains with a grain size less than or equal to 50 μm accounts for 70% or more of the total number of grains.

3. The temperature equalizing plate according to claim 1 or 2, characterized in that: The material of the first metal layer is a first metal material, the first edge portion has a first surface and a second surface arranged opposite to each other, the second surface is connected to the surface of the second edge portion, the distance between the first edge portion and the first surface is greater than or equal to 3 μm, and the mass percentage of the first metal material is greater than or equal to 95%.

4. The temperature equalizing plate according to claim 1 or 2, characterized in that: The first cover plate further includes a supporting layer connected to a side of the first metal layer away from the second metal layer.

5. The temperature equalizing plate according to claim 4, characterized in that: The material of the support layer includes at least one of titanium and its alloys, aluminum and its alloys, magnesium and its alloys, and steel.

6. The temperature equalizing plate according to claim 1 or 2, characterized in that: The first cover plate further includes a polymer layer, and the polymer layer is connected to a side of the first metal layer away from the second metal layer.

7. The temperature equalizing plate according to claim 1 or 2, characterized in that: The material of the first metal layer includes at least one of copper and its alloys, aluminum and its alloys.

8. The temperature equalizing plate according to claim 1 or 2, characterized in that: The thickness of the first metal layer is 5 μm-80 μm.

9. The temperature equalizing plate according to claim 1 or 2, characterized in that: The temperature homogenizing plate further includes: a plurality of protrusions spaced apart in the accommodating cavity, wherein one end of each of the plurality of protrusions is connected to the second main body portion, and the other ends of each of the plurality of protrusions are free ends.

10. The temperature equalizing plate according to claim 1 or 2, characterized in that: The capillary structure is connected to the first main body portion to form an integrally formed part.

11. A method for preparing a temperature equalizing plate, characterized in that: The preparation method of the temperature homogenizing plate comprises: A first cover plate, a second cover plate and a capillary structure are provided, wherein the first cover plate comprises a first metal layer, the first metal layer comprises a first main body portion and a first edge portion arranged around the periphery of the first main body portion; the second cover plate comprises a second metal layer, the second metal layer comprises a second main body portion and a second edge portion arranged around the periphery of the second main body portion; the capillary structure is connected to the first main body portion; Performing a first heat treatment on the first cover plate, the capillary structure, and the second cover plate stacked in sequence to connect the first edge portion and the second edge portion; Wherein, the temperature of the first heat treatment is 150°C-400°C, the pressure is greater than or equal to 30 MPa, and the time is greater than or equal to 30 min-100 min.

12. The method for preparing a temperature homogenizing plate according to claim 11, characterized in that: Before the first heat treatment step is performed on the first cover plate, the capillary structure and the second cover plate which are stacked in sequence, the step further includes: Performing a second heat treatment on the first cover plate and the capillary structure to connect the capillary structure to the first main body; Wherein, the temperature of the second heat treatment is 150°C-400°C, the pressure is greater than or equal to 5MPa, and the time is greater than or equal to 30min.

13. The method for preparing a temperature homogenizing plate according to claim 11 or 12, characterized in that: Before the first heat treatment step is performed on the first cover plate, the capillary structure and the second cover plate which are stacked in sequence, the step further includes: The first cover plate, the capillary structure and the second cover plate are stacked, and nanoparticles are filled between the first edge portion and the second edge portion.

14. An electronic device, characterized in that: The electronic device comprises a printed circuit board and the temperature equalizing plate according to any one of claims 1 to 10, and the first cover plate is connected to the printed circuit board.

15. The electronic device according to claim 14, characterized in that: The electronic device further includes: a middle frame; the temperature homogenizing plate, the middle frame and the printed circuit board are stacked in sequence; the middle frame is provided with a through hole penetrating the middle frame along the thickness direction of the middle frame, and the first cover plate is connected to the printed circuit board through the through hole.

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