Power modules, integrated power modules, electrical equipment and vehicles

Abstract

The present invention discloses a power module, an integrated power module, an electric device and a vehicle, wherein the power module comprises: at least two power chips, an electrical connector, wherein the at least two power chips are arranged at intervals on at least a portion of the circumferential outer side of the electrical connector. At least two power chips are arranged at intervals on at least a portion of the circumferential outer side of the electrical connector, thereby effectively eliminating the uneven source inductance between the at least two power chips, so that the gate voltage and the source voltage of each power chip are almost the same, and thus have good dynamic current sharing characteristics. At the same time, the electrical connector increases the heat dissipation path of at least two power chips, thereby further improving the temperature uniformity of the power module.

Description

Technical Field

[0001] The present invention relates to the technical field of power modules, and in particular to a power module, an integrated power module, an electrical device and a vehicle. Background Art

[0002] As a representative of the third generation of semiconductors, silicon carbide devices have excellent characteristics such as high voltage resistance, high operating junction temperature, and fast switching speed. They have gradually replaced traditional silicon IGBT devices in the electronic control system of new energy vehicles. With the increase in vehicle power requirements, the power level and power density of silicon carbide modules are also gradually increasing.

[0003] However, the improvement of the power density of silicon carbide modules is limited by the following two aspects: Electrical characteristics: As the number of power chips increases, on the one hand, the stray inductance of the main power circuit of each power chip becomes increasingly uneven; on the other hand, the coupling effect between the stray inductance of the main power circuit and the stray inductance of the gate circuit becomes increasingly serious, which will bring about negative effects such as dynamic current unevenness and gate voltage oscillation, affecting the application safety of the device; Thermal characteristics: As the number of power chips increases, the spacing between power chips gradually decreases, resulting in an increasingly enhanced thermal coupling effect between power chips, which seriously reduces the current output capacity of a single power chip.

[0004] In the related technologies, the main solutions are: connecting a resistor in series with the gate of the power chip to reduce the switching speed of the module and alleviate the negative impact of stray inductance during the switching process; using an integrated Pinfin substrate instead of thermal grease to achieve better heat dissipation performance. However, the outflow capacity of the power module using single-sided direct water cooling has reached a bottleneck. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a power module, wherein at least two power chips are arranged at intervals at least partially outside the circumference of an electrical connector, thereby effectively eliminating the uneven source inductance between the at least two power chips, so that the gate voltage and the source voltage of each power chip are almost consistent.

[0006] The present invention further proposes an integrated power module.

[0007] The present invention further provides an electrical device.

[0008] The present invention further provides a vehicle.

[0009] A power module according to an embodiment of the first aspect of the present invention comprises: at least two power chips and an electrical connector, wherein the at least two power chips are arranged at intervals on at least a portion of the circumferential outside of the electrical connector.

[0010] According to the power module of the embodiment of the present invention, at least two power chips are arranged at intervals at least partially outside the circumference of the electrical connector, thereby effectively eliminating the uneven source inductance between the at least two power chips, making the gate voltage and source voltage of each power chip almost consistent, thus having a good dynamic current sharing characteristic. At the same time, the electrical connector increases the heat dissipation path of at least two power chips, thereby further improving the temperature uniformity of the power module.

[0011] According to some embodiments of the present invention, the at least two power chips are evenly spaced and arranged at least partially outside the circumference of the electrical connection.

[0012] According to some embodiments of the present invention, the at least two power chips are arranged in an arc shape and spaced apart on a part of the circumferential outer side of the electrical connection member.

[0013] According to some embodiments of the present invention, the at least two power chips are arc-shaped and are evenly spaced apart and arranged partially outside the circumference of the electrical connector.

[0014] According to some embodiments of the present invention, the at least two power chips are arranged in a circular pattern at intervals all around the outer side of the electrical connection member.

[0015] According to some embodiments of the present invention, the at least two power chips are circular and are evenly spaced apart on the entire circumferential outside of the electrical connector.

[0016] According to some embodiments of the present invention, the power module further includes: a first layer component and a second layer component; the electrical connector is configured to: electrically connect the first layer component and the second layer component, and to ensure the connection stability between the first layer component and the second layer component.

[0017] According to some embodiments of the present invention, the electrical connector includes: a DC connector and an AC connector; the DC connector connects the central area of ​​the first layer component and the second layer component, and the AC connector connects the peripheral area of ​​the first layer component and the second layer component.

[0018] According to some embodiments of the present invention, there is one DC connector that connects the central areas of the first layer components and the second layer components; and there are at least two AC connectors that are spaced apart from each other and connect the peripheral areas of the first layer components and the second layer components.

[0019] According to some embodiments of the present invention, there is one DC connector that connects the central areas of the first layer assembly and the second layer assembly; and there are four AC connectors, the first layer assembly and the second layer assembly each include four corners, and one AC connector is provided at each corner.

[0020] According to some embodiments of the present invention, the four AC connectors are evenly spaced apart.

[0021] According to some embodiments of the present invention, the electrical connector includes: a DC connector and an AC connector; the at least two power chips include: a first chipset and a second chipset; the power module also includes: a first layer component, the first layer component includes a first substrate, the first substrate includes a first DC zone, a first AC zone and a second DC zone, and the first chipset is used to connect the first DC zone and the first AC zone; a second layer component, the second layer component includes a second substrate, and the second substrate includes a third DC zone and a second AC zone; the AC connector is used to connect the first AC zone and the second AC zone, the second chipset is used to connect the second AC zone and the second DC zone, and the DC connector is used to connect the second DC zone and the third DC zone; the direction of the current flowing through the first DC zone, the first chipset, the first AC zone, and the AC connector is a first direction; the direction of the current flowing through the second AC zone, the second chipset, the third DC zone, and the second DC zone is a second direction, and the first direction and the second direction are different.

[0022] According to some embodiments of the present invention, a first gate resistor is disposed on the first side of the first substrate, the first gate resistor is disposed between the first DC zone and the second DC zone, and the first gate resistor is electrically connected to the gate of the first chipset.

[0023] According to some embodiments of the present invention, a second gate resistor and a signal layer are disposed on the first side of the second substrate, the signal layer is disposed at the periphery of the second AC region, and the second gate resistor is disposed on the signal layer and is electrically connected to the gate of the second chipset.

[0024] According to some embodiments of the present invention, the power module further includes: a positive DC terminal, a negative DC terminal and an AC terminal, the positive DC terminal is connected to the first DC zone, the negative DC terminal is connected to the second DC zone, the AC terminal is connected to the first AC zone, and the positive DC terminal and the negative DC terminal are located on the same side and on a different side from the AC terminal.

[0025] According to some embodiments of the present invention, the positive DC terminal and the negative DC terminal both include: a connecting portion and an extending portion, the connecting portion being used to be electrically connected to the first substrate, and the extending portion being used to extend to the outside of the first substrate, the extending portion of the positive DC terminal and the extending portion of the negative DC terminal being separated from each other in the height direction and their projections on the horizontal plane at least partially overlap.

[0026] According to some embodiments of the present invention, the first layer component also includes: a first heat sink and a first solder layer, the first heat sink is arranged on the second side of the first substrate and the first solder layer is sandwiched between the first substrate and the first heat sink; and the second layer component also includes: a second heat sink and a second solder layer, the second heat sink is arranged on the second side of the second substrate and the second solder layer is sandwiched between the second substrate and the second heat sink.

[0027] The integrated power module according to the second aspect of the embodiment of the present invention comprises: three of the power modules.

[0028] According to an embodiment of the third aspect of the present invention, the electric power consumption device comprises: the power module or the integrated power module.

[0029] A vehicle according to an embodiment of the third aspect of the present invention includes: the power module or the integrated power module.

[0030] It can be seen from the above technical solution that the present invention has the following beneficial effects: at least two power chips are arranged at intervals on at least part of the circumferential outer side of the electrical connector, thereby effectively eliminating the uneven source inductance between the at least two power chips, making the gate voltage and source voltage of each power chip almost consistent, thus having a good dynamic current sharing characteristic. At the same time, the electrical connector increases the heat dissipation path of at least two power chips, thereby further improving the temperature uniformity of the power module.

[0031] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0033] Figure 1 is a schematic structural diagram of a power module according to an embodiment of the present invention;

[0034] Figure 2 is a cross-sectional view of a power module according to an embodiment of the present invention;

[0035] Figure 3 yes Figure 2 A partial schematic diagram in FIG.

[0036] Figure 4 is a bottom view of a first chip assembly according to an embodiment of the present invention;

[0037] Figure 5 is a top view of a first chip assembly according to an embodiment of the present invention;

[0038] Figure 6 is a top view of a second chip assembly according to an embodiment of the present invention;

[0039] Figure 7 is a schematic structural diagram of a second chip assembly according to an embodiment of the present invention.

[0040] Reference numerals:

[0041] 100. Power module;

[0042] 10. First layer components; 11. First substrate; 12. First heat sink; 13. First solder layer; 14. First DC zone; 15. Second DC zone; 16. First AC zone; 17. First gate resistor; 18. First chipset;

[0043] 20. Second layer components; 21. Second substrate; 22. Second heat sink; 23. Second solder layer; 24. Third DC zone; 25. Second AC zone; 26. Second gate resistor; 27. Second chipset;

[0044] 40. Electrical connector; 41. DC connector; 42. AC connector;

[0045] 51. Negative DC terminal; 52. Positive DC terminal; 53. AC terminal. DETAILED DESCRIPTION

[0046] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0047] Reference below Figure 1-Figure 7 A power module 100 according to an embodiment of the present invention is described, and the present invention also provides an electric device.

[0048] like Figure 1 and Figure 2 As shown, the power module 100 of the embodiment of the present invention includes: at least two power chips and an electrical connector 40 , wherein the at least two power chips are arranged at intervals on at least a portion of the circumferential outer side of the electrical connector 40 .

[0049] That is, at least two power chips are spaced apart on at least part of the circumferential outside of the electrical connector 40, thereby effectively eliminating the uneven source inductance between at least two power chips, making the gate voltage and source voltage of each power chip almost consistent, thus having good dynamic current sharing characteristics.

[0050] Meanwhile, the electrical connector 40 may be a copper column, which increases the heat dissipation path of at least two power chips, thereby further improving the temperature uniformity of the power module 100 .

[0051] The electrical connector 40 is divided into a DC connector 41 and an AC connector 42 . The DC connector 41 and the AC connector 42 are spaced apart from each other, and at least two power chips are spaced apart from each other on the periphery of the DC connector 41 and the AC connector 42 .

[0052] In addition, the packaging structure covers the periphery of at least two power chips and the electrical connector 40, and the heat dissipation structures of at least two power chips are exposed relative to the packaging structure. Also, the packaging structure is composed of packaging material, which can be silicone packaging material, plastic packaging material or metal packaging material.

[0053] Among them, silicone is a high-performance insulating material with good heat resistance, weather resistance and mechanical strength, and is often used for packaging in high temperature environments. Silicone also has good chemical corrosion resistance and can prevent power chips from being corroded by harmful substances. Plastic packaging is one of the most common power chip packaging methods, and commonly used plastic materials include epoxy resin, polyamide, etc. These materials have good physical properties and packaging properties and are widely used in electronic products. Metal packaging materials usually use metal shells such as aluminum, nickel, copper, etc. Metal shells have good heat dissipation and electromagnetic shielding properties, and are suitable for special applications such as high power and high frequency.

[0054] In addition, there are other special material packaging technologies, such as organic ceramics, sapphire, etc. The specific choice of packaging material depends on the application requirements and performance requirements of the power chip.

[0055] Thus, at least two power chips are arranged at least partially outside the circumference of the electrical connector 40, thereby effectively eliminating the uneven source inductance between the at least two power chips, making the gate voltage and source voltage of each power chip almost the same, thus having a good dynamic current sharing characteristic. At the same time, the electrical connector 40 increases the heat dissipation path of at least two power chips, thereby further improving the temperature uniformity of the power module 100.

[0056] According to an optional embodiment of the present invention, at least two power chips are evenly spaced and arranged at least partially outside the circumference of the electrical connector 40. That is, at least two power chips are evenly spaced and arranged outside the circumference of the electrical connector 40, so that the spacing between the at least two power chips is more uniform, thereby reducing the thermal coupling effect, and further increasing the outflow capacity of a single power chip.

[0057] Furthermore, at least two power chips are evenly spaced and arranged at least partially outside the circumference of the AC connector 42 .

[0058] According to another optional embodiment of the present invention, at least two power chips are arranged in an arc shape at intervals on a part of the circumferential outer side of the electrical connector 40. In this way, the at least two power chips adopt an arc layout scheme on the circumferential outer side of the electrical connector 40, so that the distance and source inductance between the at least two power chips connected in parallel are more consistent, and therefore, the layout scheme of the at least two power chips has a lower junction temperature and dynamic current difference.

[0059] Furthermore, at least two power chips are spaced apart in an arc shape at least partially outside the circumference of the AC connector 42 .

[0060] According to another optional embodiment of the present invention, at least two power chips are arc-shaped and evenly spaced outside a portion of the circumference of the electrical connector 40. That is, at least two power chips are arranged in an arc-shaped and evenly spaced layout, so that the distance between the at least two power chips is more consistent, different power chips have the same heat dissipation path, and it can be ensured that the parallel chips have good temperature uniformity.

[0061] Furthermore, at least two power chips are arc-shaped and evenly spaced apart and arranged at least partially outside the circumference of the AC connector 42 .

[0062] According to an optional embodiment of the present invention, at least two power chips are arranged in a circular pattern at intervals on the entire circumferential outer side of the electrical connector 40. The circular layout scheme for the at least two power chips completely eliminates the uneven source inductance between the at least two power chips, so that the gate voltage and source voltage of each power chip are almost the same, thus having a good dynamic current sharing characteristic.

[0063] Furthermore, at least two power chips are arranged in a circular shape and spaced apart on at least a portion of the circumferential outer side of the DC connector 41 .

[0064] According to another optional embodiment of the present invention, at least two power chips are circular and evenly spaced on the entire circumferential outside of the electrical connector 40. That is to say, at least two power chips are arranged in a circular and evenly spaced layout, which, on the one hand, makes the spacing between the at least two power chips more uniform, thereby reducing the thermal coupling effect and increasing the current output capacity of a single power chip. On the other hand, the circular layout completely eliminates the uneven source inductance between the at least two power chips, making the gate voltage and source voltage of each power chip almost consistent, and thus having a good dynamic current sharing characteristic.

[0065] Furthermore, at least two power chips are circular and evenly spaced apart and arranged at least partially outside the circumference of the DC connector 41 .

[0066] Combination Figure 2-Figure 7As shown, the power module 100 further includes: a first layer component 10 and a second layer component 20, and an electrical connector 40 is configured to: be used to electrically connect the first layer component 10 and the second layer component 20, and to ensure the connection stability between the first layer component 10 and the second layer component 20. That is, the electrical connector 40 is used to electrically connect the first layer component 10 and the second layer component 20, that is, the current flow between the first layer component 10 and the second layer component 20 can be achieved by setting the electrical connector 40; on the other hand, since the electrical connector 40 is a copper column, that is, when the electrical connector 40 abuts between the first layer component 10 and the second layer component 20, it can also play a supporting role, thereby ensuring the connection stability between the first layer component 10 and the second layer component 20.

[0067] Among them, Figure 2 As shown, the electrical connector 40 includes: a DC connector 41 and an AC connector 42, wherein the DC connector 41 connects the central area of ​​the first layer component 10 and the second layer component 20, and the AC connector 42 connects the peripheral area of ​​the first layer component 10 and the second layer component 20. That is, the electrical connector 40 is composed of the DC connector 41 and the AC connector 42, wherein the DC connector 41 is located in the central area of ​​the first layer component 10 and the second layer component 20, and the AC connector 42 is located in the peripheral area of ​​the first layer component 10 and the second layer component 20, so that the electrical connection between the first layer component 10 and the second layer component 20 can be achieved through the DC connector 41 and the AC connector 42, and the first layer component 10 and the second layer component 20 can also be effectively supported.

[0068] Further, there may be one DC connector 41 that connects the central area of ​​the first layer component 10 and the second layer component 20, and there may be at least two AC connectors 42, and at least two AC connectors 42 are arranged at intervals from each other and connect the peripheral areas of the first layer component 10 and the second layer component 20. In other words, the electrical connector 40 is composed of one DC connector 41 and at least two AC connectors 42, wherein the DC connector 41 is located in the central area of ​​the first layer component 10 and the second layer component 20, and at least two AC connectors 42 are respectively located in the peripheral areas of the first layer component 10 and the second layer component 20, so that there are at least three supporting points between the first layer component 10 and the second layer component 20, and the at least three supporting points can form a straight line structure or a triangular structure, thereby further improving the connection stability between the first layer component 10 and the second layer component 20.

[0069] Further, there can be one DC connector 41 that connects the central area of ​​the first layer component 10 and the second layer component 20, and there can be four AC connectors 42, and the first layer component 10 and the second layer component 20 each include four corners, and an AC connector 42 is provided at each corner. In other words, the electrical connector 40 is composed of one DC connector 41 and four AC connectors 42, wherein the DC connector 41 is located in the central area of ​​the first layer component 10 and the second layer component 20, and the four AC connectors 42 are respectively located at the four corners of the first layer component 10 and the second layer component 20, so that there are five supporting points between the first layer component 10 and the second layer component 20, and the five supporting points can at least form a quadrilateral structure, thereby further improving the connection stability between the first layer component 10 and the second layer component 20.

[0070] Among them, refer to Figure 5 As shown, four AC connectors 42 are evenly spaced. Thus, the four AC connectors 42 are evenly spaced at the four corners of the second layer assembly 20, which not only facilitates the arrangement of the AC connectors 42, but also further improves the connection stability between the first layer assembly 10 and the second layer assembly 20.

[0071] Of course, there can be three AC connectors 42, and the three AC connectors 42 form a triangular structure between the first layer component 10 and the second layer component 20, wherein the triangular structure has good stability, thereby ensuring the connection stability between the first layer component 10 and the second layer component 20.

[0072] Combination Figure 5-Figure 7 As shown, at least two power chips include: a first chipset 18 and a second chipset 27, and the power module 100 also includes: a first layer component 10 and a second layer component 20, the first layer component 10 includes a first substrate 11, the first substrate 11 includes a first DC zone 14, a first AC zone 16 and a second DC zone 15, the first chipset 18 is used to connect the first DC zone 14 and the first AC zone 16, the second layer component 20 includes a second substrate 21, and the second substrate 21 includes a third DC zone 24 and a second AC zone 25.

[0073] Furthermore, the AC connector 42 is used to connect the first AC zone 16 and the second AC zone 25, the second chipset 27 is used to connect the second AC zone 25 and the second DC zone 15, and the DC connector 41 is used to connect the second DC zone 15 and the third DC zone 24. That is, the AC connector 42 abuts between the first AC zone 16 and the second AC zone 25 and is used to electrically connect the first AC zone 16 and the second AC zone 25; the DC connector 41 abuts between the second DC zone 15 and the third DC zone 24 and is used to electrically connect the second DC zone 15 and the third DC zone 24.

[0074] The direction of the current flowing through the first DC zone 14, the first chipset 18, the first AC zone 16, and the AC connector 42 is the first direction, and the direction of the current flowing through the second AC zone 25, the second chipset 27, the third DC zone 24, and the second DC zone 15 is the second direction, and the first direction and the second direction are different. That is, the current flows from the positive DC terminal 52 into the first substrate 11, and then flows through the first chipset 18 and the first AC zone 16 of the first layer component 10 in succession through the first DC zone 14; on the first AC zone 16, the current flows to the second substrate 21 through the AC connector 42, and then flows through the second chipset 27 and the third DC zone of the second layer component 20 in succession, and finally flows into the DC busbar through the second DC zone 15 and the negative DC terminal 51. On the one hand, compared with the single-sided substrate structure, the use of the DC connector 41 shortens the commutation path by nearly half, thereby reducing the stray inductance; on the other hand, the current follows the principle of opposite directions whether in the second DC zone 15 and the first DC zone 14 on the first substrate 11 or in the first substrate 11 and the second substrate 21, and the mutual inductance and self-inductance generated cancel each other out, thereby significantly reducing the total stray inductance of the commutation circuit.

[0075] In addition, for the first layer component 10, the AC terminal 53 is placed at the first substrate 11. During commutation, whether the current passes through the first chip group 18 on the first layer component 10 or the second chip group 27 on the second layer component 20, it needs to flow through the first AC area 16 on the first substrate 11 and finally output through the AC terminal 53. Since the current of the AC terminal 53 is approximately constant during the commutation process, the current change rate on the first layer component 10 is very low, so that the voltage drop on the uneven source inductance between the parallel power chips on the second layer component 20 is low, and the gate voltage and source voltage of each power chip are relatively consistent, so it has a high dynamic current consistency. For the second layer component 20, the power chips are arranged in a circular manner, which completely eliminates the uneven source inductance between the power chips, so that the gate voltage and source voltage of each power chip are almost consistent, so it also has a good dynamic current sharing characteristic.

[0076] Of course, the electrical connector 40 may also include: an AC connector 42 and a plurality of DC connectors 41, wherein the plurality of DC connectors 41 are arranged at intervals around the AC connector 42. Similarly, on the first layer assembly 10, the first DC zone 14 and the second DC zone 15 are arranged outside the first AC zone 16, and on the second layer assembly 20, the third DC zone 24 is arranged outside the second AC zone 25. At this time, the AC connector 42 is still connected between the first AC zone 16 and the second AC zone 25, and the plurality of DC connectors 41 are all connected between the second DC zone 15 and the third DC zone 24.

[0077] Reference Figure 5As shown, a first gate resistor 17 is disposed on the first side of the first substrate 11, and the first gate resistor 17 is disposed between the first DC zone 14 and the second DC zone 15, and the first gate resistor 17 is electrically connected to the gate of the first chipset 18. That is, the first gate resistor 17 is disposed between the first DC zone 14 and the second DC zone 15.

[0078] Among them, the gate resistance refers to the resistance between the gate and the source in devices such as transistors or field effect transistors.

[0079] Reference Figure 6 As shown, a second gate resistor 26 and a signal layer are disposed on the first side of the second substrate 21. The signal layer is disposed on the periphery of the second AC region 25. The second gate resistor 26 is disposed on the signal layer and is electrically connected to the gate of the second chipset 27. That is, the first gate resistor 17 is disposed on the signal layer.

[0080] Among them, the gate resistance refers to the resistance between the gate and the source in devices such as transistors or field effect transistors.

[0081] See Figure 4 As shown, the power module 100 further includes: a positive DC terminal 52, a negative DC terminal 51 and an AC terminal 53, wherein the positive DC terminal 52 is connected to the first DC area 14, the negative DC terminal 51 is connected to the second DC area 15, and the AC terminal 53 is connected to the first AC area 16. The positive DC terminal 52 and the negative DC terminal 51 are electrically connected to the DC busbar, and the AC terminal 53 is electrically connected to the AC busbar. That is, the power module 100 is electrically connected to the outside world through the positive DC terminal 52, the negative DC terminal 51 and the AC terminal 53.

[0082] Furthermore, the positive DC terminal 52 and the negative DC terminal 51 are fixed to the first DC region 14 and the second DC region 15 respectively by ultrasonic welding.

[0083] Furthermore, the positive DC terminal 52 and the negative DC terminal 51 are located on the same side and on a different side from the AC terminal 53. That is, the positive DC terminal 52 and the negative DC terminal 51 are located on the same side of the power module 100, and the AC terminal 53 is located on the other side of the power module 100, that is, the DC output terminal and the AC output terminal of the power module 100 are located at different locations, thereby effectively isolating the AC output path and the AC output path of the power module 100, thereby improving the operating stability of the power module 100.

[0084] Wherein, the positive DC terminal 52 and the negative DC terminal 51 both include: a connecting portion and an extending portion, the connecting portion is used to be electrically connected to the first substrate 11, and the extending portion is used to extend to the outside of the first substrate 11, the extending portion of the positive DC terminal 52 and the extending portion of the negative DC terminal 51 are separated from each other in the height direction, and the projections on the horizontal plane at least partially overlap. In other words, the extending portion of the positive DC terminal 52 and the extending portion of the negative DC terminal 51 at least partially overlap, and since the current directions on the positive DC terminal 52 and the negative DC terminal 51 are opposite, the stray inductance of the overall loop is further reduced by using mutual inductance cancellation.

[0085] See Figure 3 As shown, the first layer assembly 10 further includes: a first heat sink 12 and a first solder layer 13, the first heat sink 12 is arranged on the second side of the first substrate 11 and the first solder layer 13 is sandwiched between the first substrate 11 and the first heat sink 12, and the second layer assembly 20 further includes: a second heat sink 22 and a second solder layer 23, the second heat sink 22 is arranged on the second side of the second substrate 21 and the second solder layer 23 is sandwiched between the second substrate 21 and the second heat sink 22. That is, the first heat sink 12 and the first chipset 18 are respectively arranged on both sides of the first substrate 11 of the first layer assembly 10, and the second heat sink 22 and the second chipset 27 are respectively arranged on both sides of the second substrate 21 of the second layer assembly 20, that is, the first chipset 18 and the second chipset 27 will generate heat during operation, the heat of the first chipset 18 is dissipated to the outside through the first substrate 11 and the first heat sink 12, and the heat of the second chipset 27 is dissipated to the outside through the second substrate 21 and the second heat sink 22.

[0086] Among them, silver sintering technology is used to achieve interconnection between the surface of the chip and the copper layer on the substrate.

[0087] Furthermore, the first radiator 12 and the second radiator 22 may be aluminum radiators.

[0088] That is, by respectively arranging the first heat sink 12 and the second heat sink 22 on the first layer component 10 and the second layer component 20, the two heat sinks respectively dissipate heat for the chip groups connected in parallel on the two layers of substrates, thereby reducing the thermal coupling effect and increasing the outflow capacity of a single power chip. In addition, due to the increase in the heat dissipation area, when the flow rate is greater than 12L / min, the power module 100 has a significant advantage in heat dissipation effect compared to the power module 100 using single-sided heat dissipation.

[0089] In addition, the first layer assembly 10 includes a first solder layer 13, and the second layer assembly 20 includes a second solder layer 23. The first solder layer 13 is arranged between the first substrate 11 and the first heat sink 12, and the second solder layer 23 is arranged between the second solder layer 23 and the second heat sink 22, that is, the copper layer of the substrate and the heat sink are connected through the solder layer. That is, the solder layer is composed of high thermal conductivity solder, and the high thermal conductivity solder connects the substrate and the heat sink. Different from thermal conductive silicone grease, the high thermal conductivity solder can further reduce the junction-case thermal resistance and improve the reliability of the power module 100.

[0090] An integrated power module according to an embodiment of the second aspect of the present invention includes: three power modules 100 .

[0091] The electric device according to the third aspect of the embodiment of the present invention includes: a power module 100 or an integrated power module.

[0092] A vehicle according to an embodiment of the third aspect of the present invention includes: a power module 100 or an integrated power module.

[0093] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0094] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0095] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A power module, characterized in that: include: At least two power chips, An electrical connector, wherein the at least two power chips are arranged at intervals on at least a portion of the circumferential outer side of the electrical connector; The electrical connector includes: a DC connector and an AC connector; The at least two power chips include: a first chipset and a second chipset; The power module further comprises: A first layer component, the first layer component includes a first substrate, the first chipset is disposed on the first substrate, the first substrate includes a first DC region, a first AC region and a second DC region, the first chipset is used to connect the first DC region and the first AC region, the first layer component also includes a first heat sink, and the first heat sink is disposed on a second side of the first substrate; A second layer assembly, the second layer assembly comprises a second substrate, the second chipset is disposed on the second substrate, the second substrate comprises a third DC region and a second AC region, the second layer assembly further comprises a second heat sink, and the second heat sink is disposed on a second side of the second substrate; The DC connector connects the central area of ​​the first layer assembly and the second layer assembly, and the AC connector connects the peripheral area of ​​the first layer assembly and the second layer assembly; The AC connector is used to connect the first AC area and the second AC area, the second chipset is used to connect the second AC area and the second DC area, and the DC connector is used to connect the second DC area and the third DC area; The direction of the current flowing through the first DC region, the first chipset, the first AC region, and the AC connector is a first direction; The direction of the current flowing through the second AC zone, the second chipset, and the third DC zone is a second direction, and the first direction is different from the second direction.

2. The power module according to claim 1, characterized in that: The at least two power chips are evenly spaced and arranged at least partially outside the circumference of the electrical connection member.

3. The power module according to claim 1, characterized in that: The at least two power chips are arranged in an arc shape and spaced apart on a part of the circumferential outer side of the electrical connection piece.

4. The power module according to claim 1, characterized in that: The at least two power chips are arc-shaped and are evenly spaced apart and arranged partially outside the circumference of the electrical connector.

5. The power module according to claim 1, characterized in that: The at least two power chips are arranged in a circular pattern at intervals on the entire circumferential outer side of the electrical connector.

6. The power module according to claim 1, characterized in that: The at least two power chips are circular and evenly spaced apart on the entire circumferential outer side of the electrical connector.

7. The power module according to claim 1, characterized in that: The power module further comprises: a first layer component and a second layer component; The electrical connector is configured to electrically connect the first layer component and the second layer component, and to ensure the connection stability between the first layer component and the second layer component.

8. The power module according to claim 1, characterized in that: The DC connection piece is one and connects the central area of ​​the first layer component and the second layer component; and, There are at least two AC connectors, which are spaced apart from each other and connect the peripheral areas of the first layer component and the second layer component.

9. The power module according to claim 1, characterized in that: The DC connection piece is one and connects the central area of ​​the first layer component and the second layer component; and, There are four AC connectors, and the first layer assembly and the second layer assembly each include four corners, and one AC connector is disposed at each corner.

10. The power module according to claim 9, characterized in that: The four AC connectors are evenly spaced apart.

11. The power module according to claim 1, characterized in that: A first gate resistor is disposed on the first side of the first substrate. The first gate resistor is disposed between the first DC region and the second DC region. The first gate resistor is electrically connected to the gate of the first chipset.

12. The power module according to claim 1, characterized in that: A second gate resistor and a signal layer are disposed on the first side of the second substrate. The signal layer is disposed at the periphery of the second AC region. The second gate resistor is disposed on the signal layer and is electrically connected to the gate of the second chipset.

13. The power module according to claim 1, characterized in that: Also includes: A positive DC terminal, a negative DC terminal and an AC terminal, wherein the positive DC terminal is connected to the first DC zone, the negative DC terminal is connected to the second DC zone, the AC terminal is connected to the first AC zone, and the positive DC terminal and the negative DC terminal are located on the same side and on a different side from the AC terminal.

14. The power module according to claim 13, characterized in that: The positive DC terminal and the negative DC terminal each include: a connecting portion and an extending portion, the connecting portion being used to be electrically connected to the first substrate, and the extending portion being used to extend to the outside of the first substrate, the extending portion of the positive DC terminal and the extending portion of the negative DC terminal being spaced apart from each other in a height direction and their projections on a horizontal plane at least partially overlap.

15. The power module according to claim 1, characterized in that: The first layer assembly further includes a first solder layer, wherein the first solder layer is sandwiched between the first substrate and the first heat sink; and The second layer assembly further includes a second solder layer, and the second solder layer is sandwiched between the second substrate and the second heat sink.

16. An integrated power module, characterized in that: include: A power module according to any one of claims 1 to 15.

17. An electrical equipment, characterized in that: include: The power module according to any one of claims 1 to 15 or the integrated power module according to claim 16.

18. A vehicle, characterized in that: include: The power module according to any one of claims 1 to 15 or the integrated power module according to claim 16.

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