Support substrates, composite substrates, electronic devices and modules

Abstract

The embodiment of the present invention provides a support substrate, a composite substrate, an electronic device and a module, wherein the support substrate is a polycrystalline material and has a main support surface, and an observation area of ​​the main support surface or any lateral interface parallel to the main support surface contains (101)-oriented grains, and in the observation area, the number of the (101)-oriented grains accounts for a ratio of greater than or equal to 7% of the total number of grains in the observation area, and the observation area is an area of ​​150 microns * 150 microns. The support substrate provided by the embodiment of the present invention has a special crystal orientation ratio, which can effectively improve the Q value.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic device processing and manufacturing, and in particular to a supporting substrate, a composite substrate, an electronic device and a module. Background Art

[0002] The Q value (Quality Factor) is an important parameter that describes the performance of a resonator, especially in radio frequency and microwave frequency resonators, filters and other electronic components. In existing elastic wave filters, such as SAW (surface acoustic wave) devices, improvements are made to the design of the piezoelectric layer or IDT (Interdigital Transducer) electrodes. Currently, there is no solution to design the supporting substrate to improve the device Q value. Summary of the invention

[0003] The purpose of the present invention is to improve the Q value of the device, so the present invention provides a supporting substrate, a composite substrate, an electronic device and a module. The supporting substrate has a special crystal orientation ratio, which can effectively improve the Q value.

[0004] One embodiment of the present invention provides a supporting substrate, which is a polycrystalline material and has a main supporting surface. The observation area of ​​the main supporting surface or any lateral interface parallel to the main supporting surface contains (101)-oriented grains. The number of the (101)-oriented grains in the observation area accounts for a proportion greater than or equal to 7% of the total number of grains in the supporting substrate. The observation area is an area of ​​150 microns * 150 microns.

[0005] An embodiment of the present invention provides a composite substrate, including the aforementioned supporting substrate.

[0006] One embodiment of the present invention provides an electronic device including the aforementioned composite substrate.

[0007] One embodiment of the present invention provides a module including a wiring substrate, a plurality of external connection terminals, an inductor, a sealing portion, and the aforementioned electronic device.

[0008] The above-mentioned embodiments of the present invention have at least one or more of the following beneficial effects: by designing the proportion of grains with specific orientations in the supporting substrate, the Q value of the manufactured electronic device can be improved, thereby obtaining a high-quality and high-performance filter device. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The specific implementation modes of the present invention will be described in detail below with reference to the accompanying drawings.

[0010] Figure 1A schematic structural diagram of a support substrate provided in one embodiment of the present invention.

[0011] Figure 2 A distribution diagram of grains of different orientations in a supporting substrate provided by one embodiment of the present invention.

[0012] Figure 3 A distribution diagram of grains of different orientations in a supporting substrate provided by another embodiment of the present invention.

[0013] Figure 4 A distribution diagram of grains of different orientations in a supporting substrate provided by yet another embodiment of the present invention.

[0014] Figure 5 A distribution diagram of grains of different orientations in a supporting substrate provided in yet another embodiment of the present invention.

[0015] Figure 6 A schematic structural diagram of a composite substrate provided in one embodiment of the present invention.

[0016] Figure 7 A schematic structural diagram of an electronic device provided in one embodiment of the present invention.

[0017] Figure 8 A schematic structural diagram of an electronic device provided in another embodiment of the present invention.

[0018] Fig. 9 A schematic structural diagram of an electronic device provided in yet another embodiment of the present invention.

[0019] Fig.10 A schematic structural diagram of an electronic device provided in yet another embodiment of the present invention.

[0020] Fig.11 A schematic diagram of the structure of a module provided for one embodiment of the present invention.

[0021] [Description of Reference Numerals]

[0022] 1000, module; 100, electronic device; 10, composite substrate; 11, supporting substrate; 111, main supporting surface; 112, back surface; 113, side surface; 12, piezoelectric layer; 121, main surface; 13, intermediate layer; 20, electrode; 21, IDT electrode; 22, electrode pad; 30, packaging substrate; 41, first sealing structure; 42, second sealing structure; 51, bump; 52, first conductive portion; 53, first external terminal electrode; 54, second conductive portion; 55, second external terminal electrode; 60, gap; 70, cover; 400, inductor; 500, sealing portion; 600, integrated circuit component; 700, wiring substrate; 701, external connection terminal. DETAILED DESCRIPTION

[0023] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0024] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work should fall within the scope of protection of the present invention.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] It should also be noted that the division of multiple embodiments in the present invention is only for the convenience of description and should not constitute a special limitation. The features in various embodiments can be combined and referenced to each other without contradiction.

[0027] Reference Figure 1 , an embodiment of the present invention provides a support substrate 11, the support substrate 11 is a polycrystalline material, and has a main support surface 111, in the main support surface 111 or any one of the lateral interfaces parallel to the main support surface 111, the observation area contains (101) oriented grains, the number of (101) oriented grains in the observation area accounts for more than or equal to 7% of the total number of grains in the observation area, and the observation area is an area of ​​150 microns * 150 microns. In short, the proportion of (101) oriented grains in the observation area is more than or equal to 7%, and in some specific embodiments, the proportion of (101) oriented grains in the observation area is 7-20%, such as 7%, 10%, 12%, 15%, 19%, etc.

[0028] The support substrate 11 is, for example, a spinel material, and the support substrate contains a plurality of crystal grains, and the plurality of crystal grains are, for example, a spinel structure. Specifically, in the spinel structure, oxygen ions are arranged in a cubic closest packing (ccp), divalent cations are filled in one-eighth of the tetrahedral voids, and trivalent cations are filled in one-half of the octahedral voids, and the general formula is AB2O4, wherein A is an element of a divalent cation, B is an element of a trivalent cation, and O is an oxygen element. Magnesium aluminum spinel (molecular formula MgAl2O4) is a typical representative of the spinel structure. In some embodiments, the main material of the support substrate 11 is, for example, polycrystalline magnesium aluminum spinel.

[0029] Among them, the average grain size of the grains in the support substrate 11 is 1~100μm (micrometer). That is, there can be grains of different sizes in the support substrate, for example, grains of different sizes such as 3 micrometers, 25 micrometers, 40 micrometers, 50 micrometers, 60 micrometers, and 100 micrometers, and the grain size of the smallest grain is not less than 1 micrometer (≥1μm), and the grain size of the largest grain is not more than 100 micrometers (≤100μm). The average grain size of these grains of different sizes is the average grain size of the support substrate 11. The calculation of the average grain size can be, for example, dividing the support substrate 11 into multiple regions, and counting the number of grains of each grain size in the multiple regions respectively, and averaging the number of corresponding grain sizes as weights, that is, the average grain size of the support substrate 11 is the weighted average of the grain sizes of all grains in the support substrate.

[0030] The main support surface 111 is used to support the piezoelectric layer, that is, the main support surface 111 is the surface facing the piezoelectric layer when the support substrate 11 is combined with the piezoelectric layer. The corresponding support substrate 11 also has a back surface 112 opposite to the main support surface 111. The lateral interface can be, for example, the back surface 112, or it can also be a cross section parallel to the main support surface 111. For example, the support substrate 11 is referred to as Figure 1 After cutting at the position indicated by the AA dotted line (parallel to the main supporting surface 111), the supporting substrate 11 is divided into two parts, the upper and lower parts. The main supporting surface 111 is located in the upper part, and the back surface 112 is located in the lower part. At this time, the lower surface of the upper part and the upper surface of the lower part are both lateral interfaces parallel to the main supporting surface 111.

[0031] The observation area is any square area with a length of 150 microns and a width of 150 microns on the corresponding surface. In other words, an observation surface is selected from the main support surface 111 or any lateral interface parallel to the main support surface 111, and any area with a size of 150 microns*150 microns in the observation surface can be used as the observation area.

[0032] The meaning of (101) oriented grains is that if the (101) crystal plane of a grain in the observation area faces the plane where the observation area is located, then the grain is a (101) oriented grain. (101) orientation includes 101 and Two crystal orientations in opposite directions. The proportion of grains with (101) orientation in the observation area can be obtained by using the electron backscatter diffraction (EBSD) technology to obtain the microstructure of the observation area and perform IPF coloring (Inverse Pole Figure coloring) on ​​the microstructure of the observation area. IPF coloring is a method used to characterize crystal orientation in materials science. It represents the orientation information of the crystal in the form of color on a polar coordinate diagram, so that the observer can intuitively identify the texture characteristics of the crystal. Specifically, after IPF coloring, grains with different crystal orientations are displayed in different colors. The proportion of grains with the corresponding orientation of the color in the observation area can be obtained by counting the grains of the corresponding color in the observation area and dividing it by the number of all grains in the observation area. The above calculation process can be calculated by a detection device with IPF processing function.

[0033] For example, refer to Figure 2 , which is an IPF coloring diagram of a 150 micron*150 micron area (i.e., observation area) on the main support surface 111 of a support substrate 11 (referred to as sample 1) provided in one embodiment of the present invention. The support substrate 11 is a magnesium aluminum spinel substrate with an average grain size of 60 microns. Figure 2 The proportion of (101) oriented grains in the region shown is 14.2%. The filter chip 1 made using sample 1 was tested and the Q value of the filter chip 1 reached 1678. Figure 3 , which is an IPF coloring diagram of a 150 μm*150 μm area (i.e., observation area) on the main support surface 111 of a support substrate 11 (referred to as sample 2) provided in another embodiment of the present invention. The support substrate 11 is a magnesium aluminum spinel substrate with an average grain size of 25 μm. Figure 3 The proportion of (101) oriented grains in the region shown is 12.9%. The filter chip 2 made from sample 2 was tested and the Q value of the filter chip 2 reached 1450. Figure 4 , which is an IPF coloring diagram of a 150 micron*150 micron area (i.e., observation area) on the main support surface 111 of a support substrate 11 (referred to as sample 3) provided in another embodiment of the present invention. The support substrate 11 is a magnesium aluminum spinel substrate with an average particle size of 3 microns. Figure 4The proportion of (101) oriented grains in the region shown is 9.9%. The filter chip 3 made from sample 3 was tested, and the Q value of the filter chip 3 reached 1325. Figure 5 , which is an IPF coloring diagram of a 150 micron*150 micron area (i.e., observation area) on the main support surface 111 of a support substrate 11 (referred to as sample 4) provided in another embodiment of the present invention. The support substrate 11 is a magnesium aluminum spinel substrate with an average particle size of 25 microns. Figure 5 In the region shown, the proportion of grains with (101) orientation is 14.5%, and the filter chip 4 made by using sample 4 is tested, and the Q value of the filter chip 4 reaches 1695. It can be seen that the supporting substrate 11 with a specific grain orientation ratio in the embodiment of the present invention has the effect of improving the Q value.

[0034] In some embodiments, in the observation area, the proportion of (101) oriented grains is specifically 9% to 20%, and a higher Q value can be obtained at this time.

[0035] Specifically, in some embodiments, the observation area also includes (001)-oriented grains and (111)-oriented grains, and the proportion of (101)-oriented grains in the observation area is greater than 70% of the proportion of (001)-oriented grains. For example, if the proportion of (001)-oriented grains in the observation area is 12%, then the proportion of (101)-oriented grains in the observation area is greater than 8.4%. The proportion of (001)-oriented grains in the observation area is the ratio of the number of (001)-oriented grains in the observation area to the total number of grains in the observation area. In some embodiments, the proportion of (101)-oriented grains in the observation area is greater than 70% of the proportion of (111)-oriented grains. For example, if the proportion of (111)-oriented grains in the observation area is 12.5%, then the proportion of (101)-oriented grains in the observation area is greater than 8.75%. The proportion of (001)-oriented grains in the observation area is the ratio of the number of (001)-oriented grains in the observation area to the total number of grains in the observation area. According to Figures 2 to 5 The proportion of (001) oriented grains and (111) oriented grains in samples 1 to 4 is shown in Table 1. Table 1 also shows the proportion of (101) oriented grains, (001) oriented grains and (111) oriented grains in samples 5 to 8. The last row in Table 1 is the Q value of the chip made from the corresponding sample.

[0036] Table 1:

[0037]

[0038] According to samples 1 to 7, the proportion of (101) oriented grains is greater than 7%, and the corresponding Q values ​​can reach more than 1000, and a higher Q value can be obtained. According to the comparison between samples 2 and 4, when the proportion of (001) oriented grains and the proportion of (111) oriented grains are kept basically unchanged, so that the proportion of (101) oriented grains is larger, the Q value is significantly higher. According to samples 1, 2, 4, and 5, when the proportion of (101) oriented grains is greater than the proportion of (001) oriented grains and (111) oriented grains, a higher Q value can be obtained. According to sample 8, when the proportion of (101) oriented grains is about 50% of the proportion of (001) oriented grains and (111) oriented grains, and the proportion of (101) oriented grains is less than 7%, the Q value is low. According to sample 7, when the proportion of (101) oriented grains is about 60% of the proportion of (001) oriented grains and (111) oriented grains, and the proportion of (101) oriented grains is greater than 7%, the Q value is higher than that of sample 8. According to sample 6, when the proportion of (101) oriented grains is between 70% and 80% of the proportion of (001) oriented grains and (111) oriented grains, the Q value is higher than that of samples 8 and 7. According to sample 3, when the proportion of (101) oriented grains is 80% of the proportion of (111) oriented grains, the Q value can basically meet the requirements (Q value above 1000).

[0039] Table 2 shows the Young's modulus (which can be measured by preparing a single crystal magnesium aluminate substrate with a corresponding orientation) and the corresponding electromechanical coupling coefficient (which can be measured by bonding a single crystal magnesium aluminate substrate with a corresponding orientation to a piezoelectric material to form a chip) of the (001) oriented grains, the (101) oriented grains and the (111) oriented grains.

[0040] Table 2:

[0041]

[0042] According to the comparison of the data in Table 2, the Young's modulus of the (101) oriented grains is the smallest, the corresponding K2 is the largest, and the bandwidth is wider, so a higher Q value can be obtained.

[0043] In some specific embodiments, the number of (001) oriented grains in the support substrate 11 accounts for 10-20% of the total number of grains in the support substrate, such as 10%, 11%, 15%, etc. More specifically, the proportion of (001) oriented grains is 10-15%, and more specifically, the proportion of (001) oriented grains is 11-14%.

[0044] In some specific embodiments, the number of the (111) oriented grains accounts for 8-17% of the total number of grains in the support substrate, such as 10%, 12%, 13%, 17%, etc. More specifically, the (111) oriented grains account for 10-17%. More specifically, the (111) oriented grains account for 9-13%.

[0045] In some embodiments, the number of grains oriented in the (101) direction on the main support surface 111 accounts for more than or 7% of the total number of grains on the main support surface 111, more specifically 10-20%. The number of grains oriented in the (001) direction on the main support surface 111 accounts for 10-20% of the total number of grains on the main support surface 111, more specifically 11-14%. The number of grains oriented in the (111) direction on the main support surface 111 accounts for 8-17% of the total number of grains on the main support surface 111, more specifically 9-13%.

[0046] In some embodiments, on any lateral interface parallel to the main support surface 111 on the support substrate 11, the number of grains oriented in the (101) direction accounts for a ratio of greater than or equal to 7%, more specifically 10-20%. On any lateral interface parallel to the main support surface 111 on the support substrate 11, the number of grains oriented in the (001) direction accounts for 10-20% of the total number of grains on the lateral interface, more specifically 11-14%. On any lateral interface parallel to the main support surface 111 on the support substrate 11, the number of grains oriented in the (111) direction accounts for 8-17% of the total number of grains on the lateral interface, more specifically 9-13%.

[0047] In some embodiments, the supporting substrate 11 also includes a side surface 113 connected between the main supporting surface 111 and the back surface 112. An observation area of ​​150 microns * 150 microns is selected on the side surface 113. In the observation area, the proportion of (101)-oriented grains also satisfies greater than or equal to 7%, the proportion of (001)-oriented grains also satisfies 10~20%, and the proportion of (111)-oriented grains also satisfies 8~17%.

[0048] The support substrate 11 provided in the embodiment of the present invention can be prepared by preparing raw material powder, particle size screening, blank pressing, cutting, grinding, polishing and other steps. In the step of preparing raw material powder, a corresponding sintering aid can be added. For example, the sintering aid reacts more obviously with (101) oriented grains, and reacts less well with (001) oriented grains and (111) oriented grains. Then, the proportion of (101) oriented grains can be controlled by controlling the proportion of the sintering aid, and the proportion of grains with different orientations can be controlled by the type and proportion of the sintering aid to achieve the target requirement.

[0049] Reference Figure 6, an embodiment of the present invention further provides a composite substrate 10, the composite substrate 10 includes a piezoelectric layer 12 and the supporting substrate 11 described in the aforementioned embodiment, and the piezoelectric layer 12 is arranged on the supporting substrate 11. In some embodiments, the piezoelectric layer 12 and the supporting substrate 11 are bonded to each other, and specifically the piezoelectric layer 12 is bonded to the main supporting surface 111 of the supporting substrate 11. The two can be directly bonded by van der Waals force. The piezoelectric layer 12 can be, for example, lithium tantalate or lithium niobate material. The composite substrate 10 uses the aforementioned supporting substrate 11, so it has the effect of improving the Q value.

[0050] Reference Figure 7 The embodiment of the present invention further provides an electronic device 100, comprising the supporting substrate 11 in the aforementioned embodiment or the composite substrate 10 in the aforementioned embodiment. In the composite substrate 10, the piezoelectric layer 12, for example, comprises a main surface 121 facing away from the supporting substrate 11, and the electronic device 100, for example, further comprises an electrode 20 disposed on the main surface 121, and the electrode 20, for example, comprises an IDT electrode 21, and the electronic device 100, for example, is a SAW device. The electronic device 100 has the supporting substrate 11 in the aforementioned embodiment, and thus has the effect of improving the Q value.

[0051] Reference Figure 8 In another embodiment of the present invention, the electronic device 100 (composite substrate 10) further includes an intermediate layer 13, which is located between the piezoelectric layer 12 and the supporting substrate 11. The acoustic velocity of the intermediate layer 13 is lower than that of the piezoelectric layer 12. That is, compared with the body wave propagating in the piezoelectric layer 12, the acoustic velocity of the body wave in the intermediate layer 13 is lower. In this embodiment, by providing the intermediate layer 13 with a low acoustic velocity, the acoustic velocity of the elastic wave can be reduced, and the energy of the elastic wave can be concentrated in the medium with a low acoustic velocity (i.e., the intermediate layer 13), which can reduce the loss and improve the Q value.

[0052] The material of the intermediate layer 13 is silicon oxide, silicon oxynitride, tantalum oxide, or any one of the materials with these materials as the main components. In some embodiments, the intermediate layer 13 is made of silicon oxide, and the material of the piezoelectric layer 12 is lithium tantalate. The elastic constant of lithium tantalate has a negative temperature characteristic, while silicon dioxide has a positive temperature characteristic, thereby reducing the absolute value of the TCF (temperature drift coefficient) of the elastic wave device. Furthermore, the inherent acoustic impedance of silicon oxide is smaller than the inherent acoustic impedance of lithium tantalate, so the electromechanical coupling coefficient of the electronic component can be increased.

[0053] In some embodiments, the thickness of the intermediate layer 13 is greater than or equal to 0.5λ, where λ is the wavelength of the elastic wave determined by the electrode period of the IDT electrode 21. Specifically, the thickness of the intermediate layer 13 can be 0.6~0.8λ. In some embodiments, the thickness of the piezoelectric layer 12 is less than or equal to 2λ. Specifically, the thickness of the piezoelectric layer 12 can be less than 1λ. In a specific embodiment, λ is 2.25 microns, the piezoelectric layer 12 is 0.1λ~1λ, and the thickness of the intermediate layer 13 is 0.6λ.

[0054] The electronic device 100 provided in this embodiment may be packaged in a CSP (Chip Scale Package) or a WLP (Wafer Level Package).

[0055] For example, refer to Fig. 9 , which is a structural schematic diagram of an electronic device 100 using CSP packaging. The electronic device 100 includes a component (including a composite substrate 10 and an electrode 20), a packaging substrate 30, a first sealing structure 41 and a first external terminal electrode 53. The packaging substrate 30 is arranged opposite to the surface where the electrode 20 of the component is located (that is, the main surface 121 of the piezoelectric layer 12), and a gap 60 is formed between the packaging substrate 30 and the main surface 121. The first sealing structure 41 is arranged on the side of the packaging substrate 30 facing the component, covering the side of the component and the side facing away from the packaging substrate 30 to seal the gap 60 and seal the component. The electrode 20 includes an electrode pad 22 electrically connected to the IDT electrode 21, and the electrode pad 22 is electrically connected to the first conductive portion 52 in the wiring pattern on the packaging substrate 30 through the bump 51. The first conductive portion 52 is electrically connected to the first external terminal electrode 53 on the side of the packaging substrate 30 facing away from the component, so that the electronic device 100 can be electrically connected to an external device through the first external terminal electrode 53.

[0056] Among them, the materials of the packaging substrate 30 and the first sealing structure 41 can refer to the common substrate materials and sealing materials in the existing CSP packaging. The electrode pad 22, the bump 51, the first conductive part 52 and the first external terminal electrode 53 are all made of materials with good conductive properties. This embodiment is not limited to the above examples.

[0057] Reference Fig.10, which is a structural schematic diagram of an electronic device 100 using CSP packaging. The electronic device 100 includes a component (including a composite substrate 10 and an electrode 20), a cover 70, a second sealing structure 42, and a second external terminal electrode. The cover 70 is arranged opposite to a side of the component on which the electrode 20 is arranged (that is, the main surface 121 of the piezoelectric layer 12), and a gap 60 is formed between the cover 70 and the main surface 121. The electrode 20 includes an electrode pad 22 electrically connected to the IDT electrode 21. The area on the main surface 121 where the IDT electrode 21 is arranged is called an effective area. The second sealing structure 42 is arranged between the cover 70 and the component and is arranged around the effective area. The second sealing structure 42 surrounds the electrode pad 22 to achieve sealing of the component. The second external terminal electrode 55 arranged on the surface of the cover 70 facing away from the component is connected to the electrode pad 22 through the second conductive portion 54 that penetrates the cover 70 and the second sealing structure 42, so that the electronic device 100 can be electrically connected to an external device through the second external terminal electrode 55.

[0058] The materials of the cover 70 and the second sealing structure 42 can refer to the cover material and sealing material used in the existing WLP package. The electrode pad 22, the second conductive part 54 and the second external terminal electrode 55 are all made of materials with good conductive properties, which is not limited in this embodiment.

[0059] Reference Fig.11 The invention also provides a module 1000, including a wiring substrate 700, a plurality of external connection terminals 701, an integrated circuit component 600, an electronic device 100 (including a composite substrate 10), an inductor 400 and a sealing portion 500. A plurality of external connection terminals 701 are formed on one surface of the wiring substrate 700, and the plurality of external connection terminals 701 are mounted on a motherboard of a pre-set mobile communication terminal. The integrated circuit component 600 (which may be referred to as an IC) is mounted inside the wiring substrate 700. The integrated circuit component 600 includes a switching circuit and a noise amplifier. The electronic device 100 is mounted on the main surface of the wiring substrate 700. The inductor 400 is used for impedance matching, and for example, the inductor 400 is an integrated passive device (IPD: Integrated Passive Device). The sealing portion 500 is used to seal a plurality of electronic components including the electronic device 100 on the wiring substrate 700.

[0060] The module 1000 provided in this embodiment includes the electronic device 100 , that is, includes the supporting substrate 11 , and has the same effect as the supporting substrate 11 , which will not be described in detail herein.

[0061] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with this profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A supporting substrate, characterized in that: The supporting substrate is a polycrystalline material and has a main supporting surface, and the grains in the supporting substrate are a spinel structure; the observation area on the main supporting surface or any lateral interface parallel to the main supporting surface contains (101) oriented grains, and the number of (101) oriented grains in the area accounts for 7~20% of the total number of grains in the observation area, and the observation area is an area of ​​150 microns * 150 microns.

2. The support substrate according to claim 1, wherein: The observation area also includes (001)-oriented grains, and the proportion of the (101)-oriented grains in the observation area is greater than or equal to 70% of the proportion of the (001)-oriented grains.

3. The support substrate according to claim 2, characterized in that In the observation area, the number of the (101)-oriented grains is greater than the number of the (001)-oriented grains.

4. The support substrate according to claim 2, characterized in that In the observation area, the number of the (001)-oriented grains accounts for 10-20% of the total number of grains in the observation area.

5. The support substrate according to claim 1, wherein: The observation area also includes (111)-oriented grains, and the proportion of the (101)-oriented grains in the observation area is greater than 70% of the proportion of the (111)-oriented grains.

6. The support substrate according to claim 5, characterized in that The number of the (101)-oriented grains in the observation area is greater than the number of the (111)-oriented grains.

7. The support substrate according to claim 5, characterized in that In the observation area, the number of the (111) oriented grains accounts for 10-17% of the total number of grains in the observation area.

8. The support substrate according to claim 1, wherein: In the observation area, the number of the (101) oriented grains accounts for 9-20% of the total number of grains in the observation area.

9. The support substrate according to claim 1, wherein: The observation area also includes (001)-oriented grains and (111)-oriented grains. In the observation area, the number of the (001)-oriented grains accounts for 10-15% of the total number of grains in the observation area; the number of the (111)-oriented grains accounts for 8-17% of the total number of grains in the observation area.

10. A composite substrate, characterized in that: It comprises the supporting substrate as described in any one of claims 1 to 9, and also comprises a piezoelectric layer, wherein the piezoelectric layer is arranged on the supporting substrate.

11. An electronic device, characterized in that: Comprising the composite substrate as claimed in claim 10.

12. The electronic device according to claim 11, characterized in that: It also includes an IDT electrode, which is located on a main surface of the piezoelectric layer facing away from the supporting substrate.

13. The electronic device according to claim 12, characterized in that: The invention also includes an intermediate layer located between the support substrate and the piezoelectric layer, wherein a sound velocity of the intermediate layer is lower than a sound velocity of the piezoelectric layer.

14. The electronic device according to claim 13, characterized in that The thickness of the intermediate layer is greater than or equal to 0.5λ, where λ is the wavelength of the elastic wave determined by the electrode period of the IDT electrode.

15. The electronic device according to claim 12, characterized in that The thickness of the piezoelectric layer is less than or equal to 2λ, where λ is the wavelength of the elastic wave determined by the electrode period of the IDT electrode.

16. A module, characterized in that: An electronic device comprising a wiring substrate, a plurality of external connection terminals, an inductor and a sealing portion, and the electronic device as claimed in any one of claims 11 to 15.

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