Interference super-resolution lithography system and method based on electro-optical high-speed phase shifting

Through an interference super-resolution lithography system based on electro-optical high-speed phase shift, the laser beam is regulated by using polarization beam splitting and phase regulation modules, the problem of difficulty in flexibly realizing the surface morphology and arrangement of microstructures on a meter-level area in the prior art is solved. Achieve efficient and flexible microstructure preparation.

CN118795737BActive Publication Date: 2025-02-14ZHEJIANG UNIV
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Patent Information

Application Number
CN202410827223.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-25
Publication Date
2025-02-14
Estimated Expiration
2044-06-25

AI Technical Summary

Technical Problem

The prior art is difficult to flexibly realize the surface morphology and arrangement of various microstructures on a meter-level area, and the adjustment cost is high, so it is impossible to control the position and periodic direction of interference fringes at the same time.

Method used

The interference super-resolution lithography system based on electro-optical high-speed phase shift is adopted. Through the polarization beam splitting and phase regulation module, the polarization direction and phase difference of the laser beam are regulated to achieve flexible regulation of interference fringes. The system includes a laser output module, a polarization beam splitting and phase control module, a direction and vector polarization laser modulation module, a laser beam splitting direct writing module, an illumination monitoring module and an acquisition control module.

Benefits of technology

It realizes flexible regulation of the surface morphology and arrangement of microstructures on a meter-level area, reduces artifacts in the interference fringe pattern, flexibly regulates the periodic direction and position of the interference fringe, and reduces adjustment costs.

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Abstract

The present invention discloses an interference super-resolution lithography system and method based on electro-optical high-speed phase shifting. The interference super-resolution lithography system controls the polarization directions of two phase-controlled laser beams respectively so that the polarization directions of the two laser beams are the same, thereby ensuring interference fringes with the highest contrast and reducing artifacts in the interference fringes pattern. The radial relative positions of the two laser beams with the same polarization directions are controlled, thereby realizing flexible control of the periodic direction of the interference fringes. The present invention also controls the phase difference of the two split laser beams to realize flexible control of the position of the interference fringes. Based on the flexible control of the periodic direction and position of the interference fringes, various types of microstructure surface morphology and arrangement can be flexibly realized.
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Description

Technical Field

[0001] The present invention belongs to the technical field of laser direct writing, and in particular relates to an interference super-resolution lithography system and method based on electro-optical high-speed phase shifting. Background Art

[0002] At present, the preparation of large-area complex micro-nano structures has broad practical application prospects at the level of major national strategies and industrial needs, such as aircraft bionic drag reduction, large-size flexible touch, space film lenses, etc. However, there are many problems in its preparation, such as how to flexibly realize the surface morphology and arrangement of various microstructures on an area of ​​meters without frequently changing the mask and other devices.

[0003] The invention patent application with publication number CN109541893A discloses an immersion surface plasmon interference lithography method with adjustable resolution. The steps are as follows: (1) making an aluminum mask on the surface of a glass plate; (2) spin coating a layer of polymethyl methacrylate (PMMA) on the aluminum mask; (3) standing the PMMA in step (2) until it is completely solidified; (4) coating an additional dielectric film on the surface of PMMA; (5) coating an additional aluminum film on the surface of the additional dielectric film; (6) coating an aluminum film on a photoresist substrate; (7) spin coating a layer of photoresist on the surface of the aluminum film of the photoresist substrate; (8) dripping immersion liquid on the surface of the photoresist; (9) placing the aluminum mask with the additional film above the surface of the photoresist, and allowing the immersion liquid to connect the additional aluminum film of the aluminum mask and the photoresist together; (10) irradiating the mask with monochromatic parallel light vertically to complete exposure; (11) developing the photoresist to obtain a photolithography pattern. This invention patent utilizes a mask plate for design and processing, which makes it impossible to flexibly control the microstructure and the cost of adjustment is high.

[0004] The invention patent application with publication number CN102236267A discloses a laser interference lithography system, including: at least two mirror groups; the mirror groups include: a beam splitter, a first total reflection mirror and a second total reflection mirror; the beam splitters of the mirror groups are all located on the main optical axis of the incident light; different mirror groups are located at different positions of the main optical axis; after the incident light passes through the beam splitter of the mirror group, reflected light and transmitted light are generated; after the reflected light is reflected by the first total reflection mirror and the second total reflection mirror of the mirror group, it irradiates the interference point of the sample to be photolithography; the transmitted light becomes the incident light of the mirror group adjacent to the mirror group. The lithography system disclosed in the invention patent application cannot simultaneously realize the regulation of the position of the interference fringes and the periodic direction of the interference fringes.

[0005] Traditional projection exposure lithography technology cannot produce complex three-dimensional nanostructures, and the corresponding mask needs to be designed and processed before each manufacturing, which is expensive and inefficient. Although electron beam lithography has a higher lithography resolution, it is limited by its own low writing speed and cannot complete the preparation of large-area micro-nano structures. Laser direct writing has the advantages of low cost, high writing freedom, and low working environment requirements, but it is limited to single-point writing and it is still difficult to flexibly prepare micro-nano structures. Summary of the invention

[0006] The present invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, which can flexibly realize various microstructure surface morphologies and arrangements.

[0007] The present invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, comprising:

[0008] Laser output module, used to generate and calibrate laser;

[0009] A polarization beam splitting and phase control module, comprising a polarization beam splitting module and a phase control module, wherein the polarization beam splitting module is used to obtain two laser beams in different directions by modulating the polarization direction of the calibrated laser, and the phase control module is used to control the phase difference between the two laser beams;

[0010] Direction and vector polarization laser modulation module, used to respectively perform polarization control on the two phase-controlled laser beams so that the polarization directions of the two laser beams are the same, and then control the radial relative positions of the two laser beams with the same polarization directions;

[0011] A laser beam combining direct writing module is used to combine two laser beams whose radial relative positions are adjusted and then irradiate them onto the photoresist on the displacement stage to form an interference fringe pattern;

[0012] An illumination monitoring module, used for irradiating the interference fringe pattern to obtain scattered light, and focusing the scattered light to obtain an image of the interference fringe pattern;

[0013] The acquisition control module is used to receive the image of the interference fringe pattern and synchronously control the phase control module, the direction and vector polarization laser modulation module and the illumination monitoring module to adjust the interference fringe pattern.

[0014] Preferably, the directional and vector polarization laser modulation module comprises two symmetrical branches, each branch comprising a beam expander, a movable half-wave plate and a deflection converging mirror;

[0015] Each beam expander is used to expand two phase-controlled laser beams respectively;

[0016] The movable half-wave plate of each branch is used to respectively adjust the polarization direction of the corresponding beam-expanding laser beam so that the polarization directions of the two beam-expanding laser beams are the same;

[0017] The deflection converging mirror of each branch is used to respectively adjust the radial direction of the corresponding laser beam, so as to adjust the radial relative position of the two laser beams with the same polarization direction.

[0018] Preferably, the deflection converging mirror comprises:

[0019] A fast tilt table, which is connected to the acquisition control module and is used to rotate based on the instructions of the acquisition control module;

[0020] The concave mirror is located on the fast tilting table and is used to change the propagation direction of the laser beam and focus the laser beam with the changed propagation direction onto the laser beam combining direct writing module.

[0021] Preferably, the deflection converging mirror comprises:

[0022] A galvanometer, the galvanometer being connected to the acquisition control module and configured to be deflected based on instructions from the acquisition control module;

[0023] The lens is located behind the galvanometer and is used to focus the laser beam with changed propagation direction onto the laser beam combining direct writing module.

[0024] Preferably, the polarization beam splitting module comprises a first half-wave plate and a polarization beam splitter, and the phase control module is located between the first half-wave plate and the polarization beam splitter;

[0025] The first half-wave plate is used to modulate the polarization direction of the calibrated laser to obtain polarized light;

[0026] The phase control module is used to control the phase difference of polarized light to obtain o light and e light, and make the directions of o light and e light coincide with the directions of s light and p light of the polarization beam splitter, so as to obtain the position of interference fringes;

[0027] The polarization beam splitter is used to overlap the phase-modulated o-light and e-light with the corresponding s-light and p-light, thereby splitting them into two phase-modulated laser beams.

[0028] Preferably, the laser output module comprises a laser and a beam collimator;

[0029] The laser is used to generate laser light;

[0030] The beam collimator is used to collimate and calibrate the generated laser.

[0031] Preferably, the laser beam combining direct writing module comprises a beam splitter and a photolithography objective lens;

[0032] The beam splitter is used to combine two phase-controlled laser beams;

[0033] The photolithography objective lens is used to converge the combined laser beam onto the photoresist on the displacement stage to form an interference fringe pattern, thereby completing the excitation photolithography.

[0034] Preferably, the lighting monitoring module comprises an illumination LED, a dichroic mirror, a tube lens and a camera;

[0035] The illumination LED is used to illuminate the interference fringe pattern to obtain scattered light;

[0036] The scattered light is focused onto a camera through the dichroic mirror and the tube lens, and an image of the interference fringe pattern is obtained by photographing the camera.

[0037] Preferably, the acquisition control module includes a computer and an acquisition card;

[0038] The computer is connected to the camera via communication, and is used to receive the image of the interference fringe pattern and send instructions to the acquisition card;

[0039] The acquisition card is used to synchronously control the phase control module, the direction and vector polarization laser modulation module and the illumination monitoring module based on instructions to obtain or adjust the interference fringe pattern.

[0040] On the other hand, the present invention further provides an interference super-resolution lithography method based on electro-optical high-speed phase shifting, which uses the interference super-resolution lithography system based on electro-optical high-speed phase shifting to perform interference super-resolution lithography, comprising:

[0041] Generating laser light through the laser output module, and calibrating the generated laser light;

[0042] Modulating the polarization direction of the laser beam by the polarization beam splitting module to form two laser beams, and using the phase control module to control the phase difference of the two laser beams;

[0043] The polarization directions of the two laser beams are respectively adjusted again by the directional and vector polarization laser modulation module so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams are adjusted;

[0044] The two laser beams whose radial relative positions are adjusted are combined and irradiated onto the photoresist on the displacement stage to obtain an interference fringe pattern;

[0045] The interference fringe pattern is irradiated by the illumination monitoring module to obtain scattered light, and the scattered light is focused to obtain an image of the interference fringe pattern;

[0046] The image of the interference fringe pattern is received by the acquisition control module, and the phase control module and the direction and vector polarization laser modulation module are synchronously controlled, so as to control the phase difference between the two laser beams and the radial relative position of the two laser beams, so as to obtain or adjust the interference fringe pattern;

[0047] And / or continuous lithography is achieved by moving the translation stage.

[0048] Compared with the prior art, the present invention has the following beneficial effects:

[0049] The present invention controls the polarization directions of two phase-controlled laser beams respectively so that the polarization directions of the two laser beams are the same to ensure interference fringes with the highest contrast, thereby reducing artifacts in the interference fringe pattern, and controls the radial relative positions of the two laser beams with the same polarization directions to achieve flexible control of the periodic direction of the interference fringes; the present invention also controls the phase difference between the two laser beams to achieve flexible control of the position of the interference fringes; based on the flexible control of the periodic direction and position of the interference fringes, various types of microstructure surface morphology and arrangement can be flexibly achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A schematic diagram of the principle of an interference super-resolution lithography system based on electro-optical high-speed phase shifting provided in this embodiment.

[0051] Figure 2 A schematic diagram of an interference fringe pattern obtained by step-scanning lithography of an interference super-resolution lithography system based on electro-optical high-speed phase shifting provided in this embodiment.

[0052] Figure 3 A schematic diagram of an interference fringe pattern obtained by continuous scanning lithography of an interference super-resolution lithography system based on electro-optical high-speed phase shifting provided in this embodiment. DETAILED DESCRIPTION

[0053] In order to more clearly understand the purpose, technical solutions and advantages of the present application, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments.

[0054] The prior art faces the problem of being unable to flexibly realize various types of microstructure surface morphology and arrangement on an area of ​​meter level. The specific embodiments of the present invention achieve flexible control of the position and periodic direction of the interference fringes by synchronously controlling the phase control module and the direction and vector polarization laser modulation module, so as to achieve the purpose of flexibly realizing various types of microstructure surface morphology and arrangement on an area of ​​meter level.

[0055] A specific embodiment of the present invention provides an interference super-resolution lithography system based on electro-optical high-speed phase shifting, such as Figure 1As shown, according to the optical path arrangement, it includes in sequence: a high-power laser 1, a beam collimator 2, a first half-wave plate 3, an electro-optic modulator 4, a polarization beam splitter 5, a first beam expander 6, a second half-wave plate 7, a first fast deflection converging mirror 8, a second beam expander 9, a third half-wave plate 10, a second fast deflection converging mirror 11, a beam splitter 12, a dichroic mirror 13, a lithography objective lens 14, a translation stage 15, an illumination LED 16, a tube lens 17, a camera 18, a computer 19 and an acquisition card 20.

[0056] The laser output module provided in a specific embodiment of the present invention comprises a high-power laser 1 and a beam collimator 2. The high-power laser 1 is used to generate high-power coherent laser light, and the beam collimator 2 is used to expand the beam and complete the beam collimation calibration.

[0057] The polarization beam splitting module provided in a specific embodiment of the present invention includes a first half-wave plate 3 and a polarization beam splitter 5. The first half-wave plate 3 modulates the laser into a suitable polarization direction so that the light beam is split into two laser beams with mutually perpendicular polarizations and equal light intensities after passing through the polarization beam splitter 5, so as to be independently modulated subsequently.

[0058] The phase modulation module provided in a specific embodiment of the present invention includes an electro-optical modulator 4, which uses the electro-optical effect to regulate the phase difference between o-light and e-light, and makes the directions of o-light and e-light of the electro-optical modulator 4 coincide with the directions of s-light and p-light of the polarization beam splitter 5, respectively, so that the phase difference between the two beams of light can be precisely regulated, thereby causing a controllable displacement of the stripe positions after interference of the combined beams, thereby meeting flexible lithography requirements.

[0059] The directional and vector polarization laser modulation module provided by the specific embodiment of the present invention includes a first beam expander 6, a second half-wave plate 7, a first fast deflection convergent mirror 8, a second beam expander 9, a third half-wave plate 10, and a second fast deflection convergent mirror 11. The first beam expander 6 and the second beam expander 9 expand the two beams of light respectively to match the aperture of the subsequent optical element. The second half-wave plate 7 and the third half-wave plate 10 respectively adjust the polarization direction of the two beams of light in real time, so that no matter where the two beams of light are, they have the same direction of polarization to ensure the highest contrast interference fringes and meet the excitation threshold of lithography. The second half-wave plate 7 and the third half-wave plate 10 are half-wave plates that can be electrically rotated and controlled. The first fast deflection convergent mirror 8 and the second fast deflection convergent mirror 11 are used to change the radial relative position of the two beams of light, thereby controlling the periodic direction of the interference fringes after the combined beams.

[0060] In a specific embodiment, the first fast deflection converging mirror 8 and the second fast deflection converging mirror 11 provided in this embodiment use a fast deflection platform as a deflection control device, which has a flexible hinge inside, has a short stabilization time and a high dynamic linear deflection angle, and the fast deflection state has 1. a faster refresh rate, 2. a higher responsiveness, and 3. a smaller phase difference. A concave mirror with a long focus and high surface accuracy is placed on the fast deflection platform to focus the laser on the back focal plane of the subsequent lithography objective lens to ensure that the two beams of light have wide-field interference in the photoresist after passing through the lithography objective lens.

[0061] In a specific embodiment, the first fast deflection converging mirror 8 and the second fast deflection converging mirror 11 provided in this embodiment use a galvanometer as a deflection control device, which is composed of a driving board, a high-speed swing motor, a position sensor, a negative feedback loop, etc., to form a high-precision, high-speed servo control system with high scanning speed and repeated positioning accuracy. A convex lens with a long focal length and high surface accuracy is placed behind the galvanometer to focus the laser on the rear focal plane of the subsequent photolithography objective lens to ensure that the two beams of light have wide-field interference in the photoresist after passing through the photolithography objective lens.

[0062] The laser beam combining direct writing module provided in a specific embodiment of the present invention includes a beam splitter 12, a lithography objective lens 14, and a translation stage 15. The beam splitter 12 is used to combine two laser beams. The lithography objective lens 14 converges the two laser beams on the rear focal plane, and the two laser beams interfere in the photoresist on the translation stage 15 behind the objective lens to form an interference fringe pattern, thereby completing the excitation lithography.

[0063] The lighting monitoring module provided by the specific embodiment of the present invention includes an illumination LED 16, a dichroic mirror 13, a tube lens 17, and a camera 18. The illumination LED 16 causes the light scattered by the inscribed structure to be reflected by the dichroic mirror 13, and then focused on the camera 18 through the tube lens 17, and the image of the interference fringe pattern is captured by the camera 18.

[0064] The acquisition control module provided in the specific embodiment of the present invention includes a computer 19 and an acquisition card 20. The image captured by the camera 18 is transmitted to the computer 19 through the network card communication. The acquisition card 20 realizes the synchronous control of the first fast deflection convergence mirror 8, the second fast deflection convergence mirror 11, the electro-optic modulator 4, the second half-wave plate 7, the third half-wave plate 10 and the camera 18.

[0065] In some of the embodiments, the incident light beam emitted by the laser is expanded and collimated by a beam collimator, and then the polarization direction is adjusted by a half-wave plate. After entering the polarization beam splitter, it is divided into two beams of equal intensity. These two beams are interference lights for interference super-resolution lithography. Subsequently, the two beams are expanded by a beam expander, and are respectively reflected by a concave mirror on a fast tilting table, and the propagation direction is adjusted to change the direction of the interference fringes, while the light beams are converged on the rear focal plane of the microscope objective lens at the rear. Before the fast tilting table, one of the beams is adjusted to change the phase difference by an electro-optic modulator. At the same time, the other beam is compensated for the optical path difference caused by the presence of the electro-optic modulator by a light rod. Subsequently, the light beams are respectively passed through two electrically rotatable half-wave plates to adjust the polarization direction to the same, ensuring that the light beams interfere on the sample surface in the same polarization direction to increase the contrast of the interference fringes and reduce artifacts in the image. After the two laser beams are combined by a beam splitter, they enter the microscope frame through a dichroic mirror. After realignment by the objective lens, interference fringes are formed in the photoresist on the translation stage, initiating polymerization of the photoresist.

[0066] like Figure 2 As shown, two laser beams interfere on the translation stage to form interference fringes with equal spacing. After the interference fringes are exposed at a certain position for a period of time, the translation stage steps a distance of a field of view to the next field of view. The computer 19 issues instructions to the data acquisition card 20 to control the phase modulation module and the direction and vector polarization laser modulation module to complete the precise control of the direction and position of any interference fringes, and then expose again, and the cycle is repeated until the writing exposure of all structures is completed. It is worth noting that only four interference patterns are listed in the figure. In actual writing, the direction and period of the interference fringes can be arbitrarily controlled, and can be arranged and stepped in any direction on the two-dimensional plane, not limited to the schematic diagram.

[0067] Figure 3 FIG. 1 is a schematic diagram of a continuous scanning lithography embodiment of an interference super-resolution lithography system based on electro-optical high-speed phase shifting according to the preferred embodiment. Figure 3 As shown, two laser beams interfere on the displacement stage 15 to form interference fringes with equal spacing. At the same time, the displacement stage 15 moves at a constant speed along the direction of the interference fringes, thereby exposing a line array of arbitrary length in the field of view. During the movement of the displacement stage 15, the illumination monitoring module can detect the platform position and the morphology of the writing fringes in real time. If there is a deviation in a certain direction, the phase modulation module and the direction and vector polarization laser modulation module can be manipulated to finely control the interference fringes in real time, so that the exposed fringes are uniform and straight.

[0068] On the other hand, a specific embodiment of the present invention further provides an interference super-resolution lithography method based on electro-optical high-speed phase shifting, comprising:

[0069] The laser output module generates laser light, and the generated laser light is calibrated.

[0070] The polarization direction of the laser is modulated by the polarization beam splitting module to form two laser beams, and the phase control module is used to control the phase difference of the two laser beams.

[0071] The polarization directions of the two laser beams are respectively adjusted again by the direction and vector polarization laser modulation module so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams are adjusted.

[0072] The two laser beams whose radial relative positions are adjusted are combined and irradiated onto the photoresist on the displacement stage to obtain an interference fringe pattern.

[0073] The interference fringe pattern is irradiated by the illumination monitoring module to obtain scattered light, and the scattered light is focused to obtain an image of the interference fringe pattern.

[0074] The image of the interference fringe pattern is received by the acquisition control module, and the phase control module and the direction and vector polarization laser modulation module are synchronously controlled to adjust the phase difference between the two laser beams and the radial relative position of the two laser beams to obtain or adjust the interference fringe pattern.

[0075] And / or continuous lithography is achieved by moving the translation stage.

Claims

1. An interference super-resolution lithography system based on electro-optical high-speed phase shifting, characterized in that: include: Laser output module, used to generate and calibrate laser; A polarization beam splitting and phase control module, comprising a polarization beam splitting module and a phase control module, wherein the polarization beam splitting module is used to obtain two laser beams in different directions by modulating the polarization direction of the calibrated laser, and the phase control module is used to control the phase difference between the two laser beams; Direction and vector polarization laser modulation module, used to respectively perform polarization control on the two phase-controlled laser beams so that the polarization directions of the two laser beams are the same, and then control the radial relative positions of the two laser beams with the same polarization directions; A laser beam combining direct writing module is used to combine two laser beams whose radial relative positions are adjusted and then irradiate them onto the photoresist on the displacement stage to form an interference fringe pattern; An illumination monitoring module, used for irradiating the interference fringe pattern to obtain scattered light, and focusing the scattered light to obtain an image of the interference fringe pattern; The acquisition control module is used to receive the image of the interference fringe pattern and synchronously control the phase control module, the direction and vector polarization laser modulation module and the illumination monitoring module to adjust the interference fringe pattern.

2. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1 is characterized in that: The directional and vector polarization laser modulation module includes two symmetrical branches, each of which includes a beam expander, a movable half-wave plate and a deflection converging mirror; Each beam expander is used to expand two phase-controlled laser beams respectively; The movable half-wave plate of each branch is used to respectively adjust the polarization direction of the corresponding beam-expanding laser beam so that the polarization directions of the two beam-expanding laser beams are the same; The deflection converging mirror of each branch is used to respectively adjust the radial direction of the corresponding laser beam, so as to adjust the radial relative position of the two laser beams with the same polarization direction.

3. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 2, characterized in that: The deflection converging mirror comprises: A fast tilt table, which is connected to the acquisition control module and is used to rotate based on the instructions of the acquisition control module; The concave mirror is located on the fast tilting table and is used to change the propagation direction of the laser beam and focus the laser beam with the changed propagation direction onto the laser beam combining direct writing module.

4. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 2, characterized in that: The deflection converging mirror comprises: A galvanometer, the galvanometer being connected to the acquisition control module and configured to be deflected based on instructions from the acquisition control module; The lens is located behind the galvanometer and is used to focus the laser beam with changed propagation direction onto the laser beam combining direct writing module.

5. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1, characterized in that: The polarization beam splitting module includes a first half-wave plate and a polarization beam splitter, and the phase control module is located between the first half-wave plate and the polarization beam splitter; The first half-wave plate is used to modulate the polarization direction of the calibrated laser to obtain polarized light; The phase control module is used to control the phase difference of polarized light to obtain o light and e light, and make the directions of o light and e light coincide with the directions of s light and p light of the polarization beam splitter, so as to obtain the position of interference fringes; The polarization beam splitter is used to overlap the phase-modulated o-light and e-light with the corresponding s-light and p-light, thereby splitting them into two phase-modulated laser beams.

6. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1, characterized in that: The laser output module includes a laser and a beam collimator; The laser is used to generate laser light; The beam collimator is used to collimate and calibrate the generated laser.

7. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1, characterized in that: The laser beam combining direct writing module includes a beam splitter and a photolithography objective lens; The beam splitter is used to combine two phase-controlled laser beams; The photolithography objective lens is used to converge the combined laser beam onto the photoresist on the displacement stage to form an interference fringe pattern, thereby completing the excitation photolithography.

8. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1, characterized in that: The lighting monitoring module includes an illumination LED, a dichroic mirror, a tube mirror and a camera; The illumination LED is used to illuminate the interference fringe pattern to obtain scattered light; The scattered light is focused onto a camera through the dichroic mirror and the tube lens, and an image of the interference fringe pattern is obtained by photographing the camera.

9. The interference super-resolution lithography system based on electro-optical high-speed phase shifting according to claim 1, characterized in that: The acquisition control module includes a computer and an acquisition card; The computer is connected to the camera via communication, and is used to receive the image of the interference fringe pattern and send instructions to the acquisition card; The acquisition card is used to synchronously control the phase control module, the direction and vector polarization laser modulation module and the illumination monitoring module based on instructions to obtain or adjust the interference fringe pattern.

10. An interference super-resolution lithography method based on electro-optical high-speed phase shifting, characterized in that: Using the interference super-resolution lithography system based on electro-optical high-speed phase shifting as described in any one of claims 1 to 9 to perform interference super-resolution lithography, comprising: Generating laser light through the laser output module, and calibrating the generated laser light; Modulating the polarization direction of the laser beam by the polarization beam splitting module to form two laser beams, and using the phase control module to control the phase difference of the two laser beams; The polarization directions of the two laser beams are respectively adjusted again by the directional and vector polarization laser modulation module so that the polarization directions of the two laser beams are the same, and then the radial relative positions of the two laser beams are adjusted; The two laser beams whose radial relative positions are adjusted are combined and irradiated onto the photoresist on the displacement stage to obtain an interference fringe pattern; The interference fringe pattern is irradiated by the illumination monitoring module to obtain scattered light, and the scattered light is focused to obtain an image of the interference fringe pattern; The image of the interference fringe pattern is received by the acquisition control module, and the phase control module and the direction and vector polarization laser modulation module are synchronously controlled, so as to control the phase difference between the two laser beams and the radial relative position of the two laser beams, so as to obtain or adjust the interference fringe pattern; And / or continuous lithography is achieved by moving the translation stage.

Citation Information

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