Plasma treatment equipment

Abstract

The present application provides a plasma processing device, which relates to the field of semiconductor device technology and is used to solve the technical problem of heat leakage from a dielectric window to a device body. The plasma processing device includes a device body, which has a reaction chamber, and the top of the device body has an opening connected to the reaction chamber; a dielectric window support temperature control device, which is configured to provide a high-temperature airflow to the dielectric window so that the dielectric window reaches a preset temperature; a support dielectric window, which is arranged on the device body and covers the opening; a support temperature control device, which includes a support and a heating element, the support is arranged between the device body and the dielectric window, the heating element is arranged on the support, and the support and the heating element extend along the circumference of the device body. The present application is used to solve the technical problem of heat leakage from the dielectric window to the device body, improve the operating reliability of the dielectric window, and ensure the safety and reliability of the device body.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to a plasma processing equipment. Background Art

[0002] Plasma processing equipment can be divided into capacitively coupled plasma (CCP) equipment and inductively coupled plasma (ICP) equipment.

[0003] In the related art, the ICP plasma etching equipment includes an equipment body and a dielectric window and an induction coil arranged on the top of the equipment body. The edge of the dielectric window is in direct contact with the equipment body. The equipment body is surrounded to form a reaction chamber. The central area of ​​the dielectric window has a main air inlet connected to the reaction chamber, which is responsible for transporting the process gas into the reaction chamber. The top induction coil is energized to generate a magnetic field, which excites the process gas in the reaction chamber, generates a high-concentration plasma, and etches the wafer in the reaction chamber. The dielectric window material is usually an insulating material such as quartz or ceramic, which is used to avoid interference with the magnetic field and ensure the transmission efficiency of the magnetic field into the equipment body. A large amount of by-products will be generated during the plasma etching process, which are easily deposited on the wall of the dielectric window with a lower temperature. If not controlled, they will randomly fall onto the surface of the wafer after accumulation, causing particulate pollution. Therefore, it is necessary to actively control the temperature of the insulating dielectric window, and the temperature is usually controlled above 100°C.

[0004] However, the insulating dielectric window is directly assembled on the equipment body. Due to the temperature difference between the dielectric window and the equipment body, heat will be transferred from the high-temperature dielectric window to the low-temperature equipment body. In this way, on the one hand, there will be a temperature difference between the edge of the dielectric window and the center of the dielectric window. The dielectric window of insulating materials such as quartz or ceramic is easy to break under the action of temperature difference, and there is a problem of structural reliability. On the other hand, the heat transferred to the equipment body (i.e. heat leakage) will cause the temperature of the main equipment body to soar. Therefore, the supporting facilities arranged around the high-temperature equipment body are at risk of overheating. Summary of the invention

[0005] The present application provides a plasma processing device for solving the technical problems of the temperature uniformity of the dielectric window itself and the heat leakage to the device body, improving the operating reliability of the dielectric window while ensuring the safety and reliability of the supporting facilities around the device body.

[0006] In order to achieve the above objectives, the embodiments of the present application provide the following technical solutions:

[0007] The present application provides a plasma processing device, comprising:

[0008] An equipment body, wherein the equipment body is arranged to form a reaction chamber, and a top of the equipment body has an opening communicating with the reaction chamber;

[0009] A dielectric window is disposed on the device body and covers the opening;

[0010] a dielectric window temperature control device, configured to provide a high-temperature airflow to the dielectric window so that the dielectric window reaches a preset temperature;

[0011] The support member temperature control device comprises a support member and a heating member, wherein the support member is arranged between the equipment body and the dielectric window, the heating member is arranged on the support member, and the support member and the heating member extend along the circumference of the equipment body.

[0012] In some embodiments, an annular flow channel extending along the circumference of the device body is disposed on the top of the device body, and the annular flow channel is configured to allow fluid to flow.

[0013] In some embodiments, the heating element is disposed on an outer wall surface of the support element.

[0014] In some embodiments, the support member is a support ring, and the heating member includes at least one heating tube, and the heating tube is sleeved on the support member.

[0015] A groove is arranged on the outer wall surface of the support member, the groove extends along the circumference of the support member, and the heating tube is arranged in the groove.

[0016] In some embodiments, the support member is circumferentially provided with at least two gas inlets, and the gas inlets are communicated with the reaction chamber so that the process gas enters the reaction chamber through the gas inlets.

[0017] In some embodiments, the contact area between the support member and the dielectric window is smaller than the end surface area of ​​the support member to reduce the contact area.

[0018] In some embodiments, the heating element is disposed at one end of the support element close to the dielectric window.

[0019] In some embodiments, a heat insulation structure is further included, wherein the heat insulation structure is embedded in the support member, and the heat insulation structure is located on a side of the heating member away from the dielectric window;

[0020] Alternatively, the heat insulation structure is located between the support member and the device body.

[0021] In some embodiments, a first anti-corrosion coating is provided on the wall surface of the support member facing the inner side of the reaction chamber.

[0022] In some embodiments, a liner is further included, wherein the liner includes a first connection portion, a lining portion, and a second connection portion connected in sequence, wherein the first connection portion is located between the device body and the support member, and the second connection portion is located in the reaction chamber and connected to the support structure in the reaction chamber, so that the device body is separated into a first reaction chamber and a second reaction chamber by the liner and the support structure, wherein the first reaction chamber is the etching reaction device body, and the first reaction chamber is located above the second reaction chamber.

[0023] In some embodiments, two ends of the lining portion are vertically connected to the first connecting portion and the second connecting portion respectively.

[0024] In some embodiments, the liner has a second anti-corrosion coating on a surface facing the first reaction chamber.

[0025] In some embodiments, the liner has a gas flow channel connecting the first reaction chamber and the second reaction chamber.

[0026] In some embodiments, the dielectric window temperature control device includes a high-temperature air generating device, an air duct, and an air duct box. The air duct is connected between the air duct box and the high-temperature air generating device. The air duct box is bonded to the surface of the dielectric window so that the high-temperature air generating device provides a high-temperature airflow into the air duct box through the air duct.

[0027] The plasma processing equipment provided in the embodiment of the present application is provided with a support member temperature control device between the dielectric window and the equipment body, wherein the support member temperature control device includes a support member and a heating member, wherein the support member is provided between the equipment body and the dielectric window, and the heating member is provided on the support member, and the support member and the heating member extend along the circumference of the equipment body, so that the heating of the heating member can reduce the temperature difference between the support member and the dielectric window, thereby reducing the heat transfer from the dielectric window to the support member, and also can realize auxiliary temperature control of the dielectric window, improve the temperature uniformity of the dielectric window, and ensure the operation reliability of the dielectric window; in addition, by providing an annular flow channel at the top of the equipment body, a cooling fluid circulates inside, so that the heat leakage from the support member to the equipment body is taken away, and the heat is isolated from being further transferred to the equipment body, thereby avoiding the problem of temperature surge in the equipment body, thereby reducing the over-temperature risk of the supporting facilities arranged around the equipment body.

[0028] In addition to the technical problems solved by the embodiments of the present application described above, the technical features that constitute the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions, other technical problems that can be solved by the plasma processing equipment provided by the present application, other technical features included in the technical solutions, and the beneficial effects brought about by these technical features will be further described in detail in the specific implementation methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0030] Figure 1 A schematic diagram of the structure of a plasma processing device provided in an embodiment of the present application;

[0031] Figure 2 A schematic diagram of a structure of a temperature control device for a support member in a plasma processing device provided in an embodiment of the present application;

[0032] Figure 3 Another structural schematic diagram of a support temperature control device in a plasma processing device provided in an embodiment of the present application;

[0033] Figure 4 Another structural schematic diagram of a support temperature control device in a plasma processing device provided in an embodiment of the present application;

[0034] Figure 5 A schematic diagram of the structure of a support member in the support member temperature control device provided in an embodiment of the present application;

[0035] Figure 6 A schematic diagram of the structure of a heating element in a support element temperature control device provided in an embodiment of the present application;

[0036] Figure 7 Another structural schematic diagram of the heating element in the support element temperature control device provided in an embodiment of the present application.

[0037] Description of reference numerals:

[0038] 100- Plasma treatment equipment;

[0039] 110-equipment body; 111-reaction chamber; 1111-first reaction chamber;

[0040] 1112 - second reaction chamber; 112 - annular flow channel;

[0041] 120-dielectric window;

[0042] 130-support member temperature control device; 131-support member; 1311-groove; 1312-air inlet;

[0043] 132-heating element; 1321-heating tube; 133-protective cover; 134-protective sleeve;

[0044] 140 - lining; 141 - first connecting portion; 142 - lining portion; 143 - second connecting portion;

[0045] 150-support structure; 160-coil;

[0046] 170-dielectric window temperature control device; 171-high temperature air generating device; 172-air duct;

[0047] 173-Air duct box. DETAILED DESCRIPTION

[0048] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the scope of protection of this application.

[0049] First, those skilled in the art should understand that these implementations are only used to explain the technical principles of the present application and are not intended to limit the scope of protection of the present application. Those skilled in the art can make adjustments to them as needed to adapt to specific application scenarios.

[0050] Secondly, it should be noted that in the description of the present application, terms such as "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is only for the convenience of description and does not indicate or imply that the device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present application.

[0051] In addition, it should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0052] An embodiment of the present application provides a plasma processing device, which can form a layer on a substrate or etch a layer on a substrate using, for example, inductively coupled plasma, wherein the substrate may include a semiconductor substrate or the like.

[0053] Among them, the plasma processing equipment can not only be used for a variety of semiconductor etching processes, such as shallow trench isolation etching and polysilicon gate etching; it can also be used for dielectric and metal etching, such as spacer etching, mask etching, back etching, etc.

[0054] The structure of the plasma processing equipment provided in the present application will be described in detail below with reference to the accompanying drawings.

[0055] Please refer to Figure 1 As shown, the plasma processing equipment 100 provided in the embodiment of the present application includes an equipment body 110, a dielectric window 120, a dielectric window temperature control device 170 and a support temperature control device 130; the equipment body 110 is arranged to form a reaction chamber 111, and the top of the equipment body 110 has an opening connected to the reaction chamber 111, and the dielectric window 120 is arranged on the equipment body 110 and covers the opening.

[0056] In addition, a coil 160 is also provided on the top of the plasma processing equipment 100. For example, the coil 160 is provided on the top of the dielectric window 120 and is connected to the RF matcher. After the RF is connected, an alternating magnetic field is generated to excite the process gas in the reaction chamber 111 to generate a high-concentration plasma for performing related etching processes.

[0057] Among them, the dielectric window 120 is, for example, an insulating dielectric window 120, which is used to cover the opening of the reaction chamber 111 and ensure that the electromagnetic field generated by the coil 160 penetrates into the reaction chamber 111. The dielectric window 120 can improve the transmission efficiency of the magnetic field of the coil 160 into the reaction chamber 111 and ensure the vacuum environment of the reaction chamber 111.

[0058] The material of the dielectric window 120 may be ceramic or quartz material, and the thickness may be greater than or equal to 20 mm, for example. However, when the surface temperature difference of the dielectric window 120 is large, the dielectric window 120 is at risk of breaking, so it is necessary to improve the temperature uniformity of the surface of the dielectric window 120. In addition, in order to prevent the by-products in the reaction chamber 111 from being deposited on the dielectric window 120, the temperature of the dielectric window 120 is usually controlled above 100°C. At the same time, in the actual etching process, the by-products generated by different processes are different, and the corresponding temperature requirements of the top dielectric window 120 are different.

[0059] In some embodiments, a dielectric window temperature control device 170 is provided to provide high temperature to the dielectric window 120 for heating the dielectric window so that the temperature of the dielectric window 120 is controlled within a normal working range.

[0060] In some embodiments, the dielectric window temperature control device 170 includes a high-temperature air generating device 171, an air duct 172, and an air duct box 173. The air duct 172 is connected between the air duct box 173 and the high-temperature air generating device 171. The air duct box 173 is bonded to the surface of the dielectric window 120. For example, the air duct box 173 is bonded to the top surface of the dielectric window 120 to restrict the high-temperature air to flow on the top surface of the dielectric window for heating the dielectric window.

[0061] In order to meet the temperature requirement of the dielectric window 120 and improve the uniformity of the surface temperature of the dielectric window 120 during the actual etching process, in an embodiment of the present application, a support temperature control device 130 is provided between the equipment body 110 and the dielectric window 120, so that the temperature of the support 131 itself can be increased through the support temperature control device 130, and the temperature difference between the temperature of the support 131 and the dielectric window 120 can be reduced, thereby avoiding the heat of the dielectric window 120 from being transferred to the support 131, thereby achieving the effect of auxiliary temperature control of the dielectric window 120, thereby improving the operating reliability of the dielectric window 120.

[0062] In some embodiments, the support member temperature control device 130 includes a support member 131 and a heating member 132, wherein the support member 131 is disposed between the device body 110 and the dielectric window 120, and the heating member 132 is disposed on the support member 131, and the support member 131 and the heating member 132 extend along the circumference of the device body 110. The heating member 132 can increase the temperature of the support member 131 when powered on for heating, so that the temperature difference between the end of the support member 131 close to the dielectric window 120 and the dielectric window 120 can be reduced, thereby reducing the local temperature drop caused by the heat leakage from the part of the dielectric window 120 close to the support member 131 to the support member 131, improving the temperature uniformity of the dielectric window 120, and improving the working reliability of the dielectric window 120.

[0063] In order to avoid the problem of heat transfer from the support member 131 to the device body 110 causing a temperature surge in the device body 110, in an embodiment of the present application, an annular flow channel 112 extending along the circumference of the device body 110 is provided at the top of the device body 110, and the annular flow channel 112 is configured to allow fluid to flow, so that the fluid flowing in the annular flow channel 112 absorbs the heat transferred to the device body 110 by the support member 131, so as to isolate the heat from being transferred to the device body 110, avoid the problem of heat leakage from the dielectric window 120 to the device body causing a temperature surge in the device body 110, and reduce the safety hazards of supporting facilities around the device body 110.

[0064] Among them, the temperature of the fluid flowing in the annular flow channel 112 can have a certain temperature difference with the temperature of the equipment body 110, that is, the temperature of the fluid is lower than the temperature of the equipment body 110, so that the heat can be taken away in time by the fluid circulating in the annular flow channel 112 to prevent the heat from continuing to be transferred to the inside of the equipment body 110, and then the temperature of the equipment body 110 is controlled within a safe temperature range to improve the safety and reliability of the equipment body 110; illustratively, the temperature of the fluid flowing in the annular flow channel 112 is, for example, 50°C~65°C, for example, the temperature of the fluid is, for example, 50°C, 55°C, 60°C, 65°C, etc., and can be adaptively set according to actual needs, and no limitation is made here.

[0065] Among them, the device body 110 is, for example, a closed contour whose cross-sectional shape after being cut in the horizontal direction is circular, rectangular, elliptical or other shapes. Correspondingly, the cross-sectional shape of the reaction chamber 111 formed is also, for example, circular, rectangular, elliptical or other shapes. For example, when the substrate is a circular substrate, the cross-sectional shape of the reaction chamber 111 is, for example, a circular structure matching the contour shape of the substrate to facilitate the placement of the substrate.

[0066] The support member 131 may be an annular support member 131 that matches the contour shape of the device body 110. The support member 131 is disposed on the top of the device body 110, and the dielectric window 120 is disposed on the support member 131 and covers the opening of the reaction chamber 111, so that the reaction chamber 111 is formed into a sealed reaction chamber 111.

[0067] The heating element 132 may be an annular heating element 132. In addition, the number of heating elements is not limited, for example, multiple annular heating elements 132 may be arranged in parallel along the circumference of the support member 131, so that the circumferential temperature of the dielectric window 120 remains uniform. In addition, there may be intervals between the multiple heating elements, and the embodiments of the invention are not limited thereto.

[0068] It can be understood that the dielectric window 120 is in contact with the support member 131 at a circumferential position close to the edge, while the position close to the center is in a suspended state. Therefore, there is a problem of heat loss at a circumferential position close to the edge of the dielectric window 120, which leads to a radial temperature difference in the dielectric window 120. In the embodiment of the present application, the support member 131 is heated by the heating member 132, so that the temperature difference between the support member 131 and the dielectric window 120 can be reduced, so that the temperature between the support member 131 and the dielectric window 120 remains balanced. In this way, the heat loss near the edge of the dielectric window 120 can be reduced, and the radial temperature difference of the dielectric window 120 can be reduced.

[0069] It can be seen that in the embodiment of the present application, by setting a support member temperature control device 130 between the dielectric window 120 and the device body 110, the support member temperature control device 130 includes a support member 131 and a heating member 132, the support member 131 is set between the device body 110 and the dielectric window 120, the heating member 132 is set on the support member 131, and the support member 131 and the heating member 132 extend along the circumference of the device body 110, so that the heating member 132 is heated to reduce the temperature difference between the support member 131 and the dielectric window 120 , so as to reduce the heat transfer from the dielectric window 120 to the support member 131, avoid the problem of heat leakage of the dielectric window 120, thereby improving the temperature uniformity of the dielectric window 120 and ensuring the operational reliability of the dielectric window 120; in addition, by arranging an annular flow channel 112 on the top of the device body 110, the fluid flowing in the annular flow channel 112 can be isolated from further heat transfer to the device body 110, avoiding the problem of temperature surge in the device body 110, thereby improving the safety and reliability of the device body 110 and reducing safety hazards.

[0070] In some embodiments, the heating element 132 is disposed on the outer wall surface of the support element 131 , so as to facilitate the installation and maintenance of the heating element 132 .

[0071] In some embodiments, the heating element 132 and the support element 131 are detachably connected. For example, the heating element 132 is sleeved on the outer wall surface of the support element 131. In this way, the difficulty of disassembly and assembly between the heating element 132 and the support element 131 is reduced, so as to facilitate the disassembly and assembly, maintenance, etc. of the heating element 132.

[0072] In some embodiments, the support member 131 is a support ring (eg Figure 5 As shown in ), the heating element 132 includes at least one heating tube 1321, and the heating tube 1321 is sleeved on the support element 131.

[0073] When the heating element 132 is a heating tube 1321, the heating tube 1321 may be an annular heating tube independently forming a complete annular structure, or an annular heating tube formed by connecting a plurality of heating tube segments in series to form an annular structure, or a spiral heating tube formed by connecting a plurality of heating tube segments in series to form a spiral. Figure 2 and Figure 4 In the example, the heating tube 1321 is a ring-shaped heating tube; Figure 3 In the figure, the heating tubes 1321 are two independent annular heating tubes, and the two annular heating tubes are arranged at intervals along the vertical direction on the outer wall surface of the support member 131.

[0074] In addition, if Figure 2 and Figure 3As shown, the heating tube 1321 is embedded in the groove 1311 on the outer wall surface of the support member 131, and the exposed portion of the heating tube 1321 is provided with a protective cover 133; Figure 4 In the figure, a protective sleeve 134 is formed on the outer periphery of the heating tube 1321, and a portion of the protective sleeve 134 is embedded in the groove 1311; it can be understood that whether the protective cover 133 or the protective sleeve 134 is provided, the heating element 132 is protected to extend the service life of the heating element 132.

[0075] In other embodiments, the heating tube 1321 is formed into a ring-shaped at least two-layer structure. When the heating tube 1321 is sleeved on the support member 131, the contact area between the heating tube 1321 and the support member 131 can be increased, thereby improving the uniformity of the temperature of the support member 131 in the circumferential direction.

[0076] For example, in Figure 7 In the embodiment, the heating tube 1321 is wound to form a two-layer structure, which increases the contact area between the heating tube 1321 and the support member 131 in the circumferential direction, thereby improving the temperature uniformity of the support member 131 in the circumferential direction.

[0077] In some embodiments, the heating element 132 can be formed by casting or the like, for example, Figure 6 In the embodiment, two semicircular heating elements 132 are first formed by casting, and then the two semicircular heating elements 132 can be fixed to the support element 131 by interlocking or the like.

[0078] In some embodiments, please refer to Figures 1 to 4 As shown, a groove 1311 is provided on the outer wall surface of the support member 131, and the groove 1311 extends along the circumference of the support member 131, and the heating member 132 is arranged in the groove 1311; in this way, the heating member 132 can be closer to the dielectric window 120 in the horizontal direction, and the distance between the heating member 132 and the dielectric window 120 in the horizontal direction is shortened, so that the heat generated by the heating member 132 is transferred to the dielectric window 120. It can be understood that the temperature of the heating member 132 can be greater than the temperature of the dielectric window 120, and the temperature of the end of the support member 131 close to the dielectric window 120 is increased by the heating member 132, and the temperature of the support member 131 is greater than the dielectric window 120. In this way, the heat generated by the heating member 132 can be transferred to the dielectric window 120 through the support member 131, so that the heating member 132 can perform auxiliary temperature control on the dielectric window 120 to meet the temperature requirement of the dielectric window 120 and improve the working reliability of the dielectric window 120.

[0079] Among them, the cross-sectional shape of the groove 1311 can be rectangular, semicircular or any other shape, as long as it can accommodate the heating element 132 and facilitate the disassembly and fixation of the heating element 132 and reduce the radial size of the heating element 132 and the dielectric window 120. There is no limitation here.

[0080] Exemplarily, the heating element 132 is an annular heating element 132 , and accordingly, the groove 1311 is also an annular groove 1311 extending along the circumference of the annular support element 131 , and the heating element 132 is located in the groove 1311 .

[0081] In some embodiments, the support member 131 has at least two air inlets arranged in a circumferential direction. For example, the groove 1311 of the support member 131 has at least two air inlets 1312, and the air inlets 1312 connect the outside air and the reaction chamber 111; or, the air inlet 1312 is connected to the air inlet pipeline to serve as a lateral air inlet channel for the process gas to provide the process gas into the reaction chamber, and the two air inlets 1312 are arranged in the groove 1311 along the circumferential direction of the groove 1311 at intervals; illustratively, at least two air inlets 1312 in the groove 1311 can be evenly and spacedly arranged along the circumference of the groove 1311 to improve the stable balance of the air pressure in the reaction chamber 111 in the circumferential direction.

[0082] For example, in Figures 1 to 4 In the figure, the heating element 132 is located between the air inlet 1312 and the dielectric window 120, that is, the air inlet 1312 is arranged on the side of the heating element 132 away from the dielectric window 120. In this way, the air layer in the air inlet 1312 can be insulated to reduce the heat transfer from the equipment body above the air inlet 1312 to the equipment body 110 below the air inlet 1312, so as to avoid the problem of temperature surge in the equipment body 110.

[0083] In order to further reduce the heat loss of the dielectric window 120, in the embodiment of the present application, Figure 1 As shown, the contact area between the support member 131 and the dielectric window 120 (eg Figure 1 A1 in FIG. 1 is smaller than the end surface area of ​​the support member 131 close to the dielectric window 120 (eg Figure 1 A2 in the figure), that is, the contact area between the support member 131 and the dielectric window 120 is smaller than the end surface area of ​​the support member 131 facing the dielectric window 120. In this way, the problem of heat loss from the dielectric window 120 to the support member 131 is reduced by reducing the contact area between the support member 131 and the dielectric window 120, thereby ensuring the working reliability of the dielectric window 120.

[0084] In some embodiments, the heating element 132 is disposed at one end of the support member 131 close to the dielectric window 120 to reduce the distance between the heating element 132 and the dielectric window 120 in the vertical direction, so as to facilitate the auxiliary temperature control of the dielectric window 120 by the heating element 132. In addition, the distance between the heating element 132 and the device body 110 is increased, the heat transfer path is extended, the heat dissipation area is increased, and the heat transferred to the device body 110 can be reduced.

[0085] That is, the support member 131 reduces the contact area with the dielectric window 120 and the device body 110 as much as possible except for the necessary contact at the sealing surface, so as to reduce heat leakage to the device body 110 and improve the energy efficiency of the heating element 132 .

[0086] In order to further prevent heat from being transferred from the support member 131 to the device body 110, an embodiment of the present application also includes a heat insulation structure. As an example, the heat insulation structure is embedded in the support member 131, and the heat insulation structure is located on the side of the heating element 132 away from the dielectric window 120, so as to isolate the heat from being transferred to the device body 110 through the heat insulation structure.

[0087] In another exemplary embodiment, the heat insulation structure is located between the support member 131 and the device body 110 to isolate heat from being transferred to the device body 110 through the heat insulation structure.

[0088] The thermal insulation structure may be formed of a material that does not have heat transfer properties. For example, the thermal insulation structure is made of thermal insulation materials such as glass fiber, asbestos, rock wool, silicate, vacuum board, aerogel felt, etc.

[0089] In some embodiments, the material of the support member 131 includes but is not limited to aluminum alloy, silicon carbide, or ceramic.

[0090] In order to prevent the support member 131 from being corroded by byproducts generated during etching in the reaction chamber 111 , in the embodiment of the present application, a first anti-corrosion coating is provided on the wall surface of the support member 131 facing the reaction chamber 111 to increase the service life of the support member 131 .

[0091] The first anti-corrosion coating is, for example, an anti-corrosion hard oxide material, and is not limited here as long as it can prevent corrosion.

[0092] In some embodiments, please refer back to Figure 1As shown, it also includes a liner 140, and the liner 140 includes a first connection part 141, a lining part 142 and a second connection part 143 which are connected in sequence. The first connection part 141 is located between the equipment body 110 and the support member 131, and the second connection part 143 is located in the reaction chamber 111 and is connected to the support structure 150 in the reaction chamber, so that the reaction chamber 111 is separated into a first reaction chamber 1111 and a second reaction chamber 1112 by the lining part 142, the second connection part 143 and the support structure 150, and the first reaction chamber 1111 is located above the second reaction chamber 1112, and the first reaction chamber 1111 is used for etching reaction. In this way, through the isolation of the liner 140, it is possible to prevent by-products generated during etching processes from being deposited on the surface of parts in the second reaction chamber 1112, thereby extending the service life of equipment parts in the second reaction chamber 1112.

[0093] In some embodiments, the two ends of the lining portion 142 are respectively vertically connected to the first connection portion 141 and the second connection portion 143, for example, the lining portion 142 extends in the vertical direction, and the first connection portion 141 and the second connection portion 143 extend in the horizontal direction, respectively; wherein, the two ends of the lining portion 142 are respectively vertically connected to the first connection portion 141 and the second connection portion 143, which means that both vertical and approximately vertical connections are vertical connections.

[0094] Exemplarily, the end of the second connection portion 143 abuts against the side wall of the support structure 150, and there is no need to additionally fix the second connection portion 143 and the support structure 150. This can reduce the difficulty of disassembling the liner 140, thereby reducing the disassembly cost.

[0095] In some embodiments, the lining portion 142 has a second anti-corrosion coating on the surface facing the first reaction chamber 1111 to increase the service life of the lining 140 , wherein the second anti-corrosion coating is, for example, a corrosion-resistant hard oxide material, and is not limited here as long as it can resist corrosion.

[0096] In some embodiments, the liner 140 may be detachably connected to the device body 110 to facilitate disassembly and cleaning of the liner 140 .

[0097] In some embodiments, the liner 140 may be an independent structure from the support member 131 , or may be an integral structure with the support member 131 , which is not limited herein.

[0098] In some embodiments, at least one of the lining portion 142 and the second connecting portion 143 is provided with a plurality of evenly spaced gas flow channels for extracting etching byproducts in the first reaction chamber.

[0099] Among them, when it needs to be explained, the air flow channel used to extract etching by-products can be opened or closed. When it is not necessary to extract etching by-products, the air flow channel is closed. When it is necessary to extract etching by-products, the air flow channel is opened to extract the etching by-products through the air flow channel by means of the etching by-product suction device.

[0100] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.

[0101] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, a person of ordinary skill in the art should understand that the technical solutions described in the aforementioned embodiments can still be modified, or some or all of the technical features therein can be replaced by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solution to deviate from the scope of the technical solution of the embodiments of the present application.

Claims

1. A plasma processing device, characterized in that: include: An equipment body, wherein the equipment body is arranged to form a reaction chamber, and a top of the equipment body has an opening communicating with the reaction chamber; A dielectric window is disposed on the device body and covers the opening; A dielectric window temperature control device, configured to control the dielectric window to reach a preset temperature; A support member temperature control device, comprising a support member and a heating member, wherein the support member is arranged between the device body and the dielectric window, the heating member is arranged on the support member, and the support member and the heating member extend along the circumference of the device body; A liner, the liner comprising a first connection portion, a lining portion, and a second connection portion connected in sequence, the lining portion extending in a vertical direction, and the lining portion being vertically connected to the first connection portion and the second connection portion, respectively, the first connection portion being located between the device body and the support member, the second connection portion being located in the reaction chamber, and an end portion of the second connection portion being in contact with a side wall of a support structure in the reaction chamber, so that the device body is separated into a first reaction chamber and a second reaction chamber isolated from each other by the liner and the support structure, the first reaction chamber being an etching reaction device body, and the first reaction chamber being located above the second reaction chamber; Wherein, an annular flow channel extending along the circumference of the equipment body is arranged on the top of the equipment body, and the annular flow channel is configured to allow fluid to flow so as to absorb heat transferred from the support member to the equipment body.

2. The plasma processing equipment according to claim 1, characterized in that: The heating element is arranged on the outer wall surface of the supporting element.

3. The plasma processing equipment according to claim 1, characterized in that: The support member is a support ring, and the heating member includes at least one heating tube, which is sleeved on the support member.

4. The plasma processing equipment according to claim 3, characterized in that: A groove is arranged on the outer wall surface of the support member, the groove extends along the circumference of the support member, and the heating tube is arranged in the groove.

5. The plasma processing equipment according to any one of claims 1 to 4, characterized in that: The support member is circumferentially provided with at least two gas inlets, and the gas inlets are communicated with the reaction chamber so that the process gas enters the reaction chamber through the gas inlets.

6. The plasma processing device according to any one of claims 1 to 4, characterized in that: The contact area between the support member and the dielectric window is smaller than the end surface area of ​​the support member.

7. The plasma processing equipment according to claim 1, characterized in that The heating element is arranged at one end of the supporting element close to the dielectric window.

8. The plasma processing equipment according to claim 3, characterized in that: It also includes a heat insulation structure, which is embedded in the support member and located on a side of the heating member away from the dielectric window; Alternatively, the heat insulation structure is located between the support member and the device body.

9. The plasma processing device according to any one of claims 1 to 4, characterized in that: The support member has a first anti-corrosion coating on its wall surface facing the inner side of the reaction chamber.

10. The plasma processing equipment according to claim 9, characterized in that The inner liner has a second anti-corrosion coating on a surface facing the first reaction chamber.

11. The plasma processing equipment according to claim 10, characterized in that: The liner has an air flow channel connecting the first reaction chamber and the second reaction chamber.

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