Radio frequency power amplifier device and manufacturing method thereof

Abstract

The embodiment of the present application provides a radio frequency power amplifier device and a manufacturing method thereof, wherein the radio frequency power amplifier device includes: an active device, a grounded capacitor device and an inductor component; the inductor component is arranged on the grounded capacitor device; and the inductor component is connected between the active device and the grounded capacitor device. The radio frequency power amplifier device and the manufacturing method thereof provided in the embodiment of the present application connect the inductor component between the active device and the grounded capacitor device, which can improve the problem of electromagnetic coupling caused by the existence of parallel components of two bonding wires in the traditional solution, thereby reducing the loss of the output signal and increasing the power amplifier efficiency.

Description

Technical Field

[0001] The present application relates to semiconductor technology, and in particular to a radio frequency power amplifier device and a method for manufacturing the same. Background Art

[0002] RF power amplifier is a RF device / module that amplifies weak RF signals through a combination of a series of active or passive electronic components and pushes them to the antenna for transmission. High-power amplifiers used in base stations usually use discrete RF power amplifiers, such as Figure 1 The radio frequency power amplifier device comprises: an input matching capacitor chip 1, an active device 2 as a driving device and a grounding capacitor device 3, and its structure is relatively simple.

[0003] Figure 2 is a common physical implementation method of the above-mentioned RF power amplifier device. Figure 2 As shown, the input matching capacitor chip 1, the active device 2 and the grounding capacitor device 3 are formed side by side on the substrate, the first lead 11 between the input matching capacitor chip 1 and the input end, the second lead 12 between the input matching capacitor chip 1 and the active device 2, the third lead 13 between the active device 2 and the grounding capacitor device 3, and the fourth lead 14 between the active device 2 and the output end respectively form equivalent inductances. The first lead 11, the second lead 12, the third lead 13 and the fourth lead 14 are each used as equivalent inductances. Figure 1 shown.

[0004] In the above scheme, the third lead 13 and the fourth lead 14 have the same lead-out direction and have parallel components in the X-axis and Z-axis directions, so that the inductance formed by the third lead 13 and the fourth lead 14 has mutual inductance and strong electromagnetic coupling, resulting in a large loss in the output signal, thereby reducing the power amplifier efficiency. Summary of the invention

[0005] In order to solve one of the above-mentioned technical defects, a radio frequency power amplifier device and a manufacturing method thereof are provided in an embodiment of the present application.

[0006] According to a first aspect of an embodiment of the present application, there is provided a radio frequency power amplifier device, comprising: an active device, a grounded capacitor device and an inductor component;

[0007] The inductor component is arranged on the grounded capacitor device; the inductor component is connected between the active device and the grounded capacitor device.

[0008] According to a second aspect of an embodiment of the present application, a method for manufacturing a radio frequency power amplifier device is provided, comprising:

[0009] Active devices and grounded capacitor devices are arranged on the frame substrate;

[0010] The inductor component is arranged on the grounded capacitor component so that the inductor component is electrically connected to the grounded capacitor component;

[0011] Bond wires are connected between the inductive component and the active device.

[0012] The technical solution provided in the embodiment of the present application is that the radio frequency power amplifier device includes: an active device, a grounded capacitor device and an inductor component; the inductor component is arranged on the grounded capacitor device; the inductor component is connected between the active device and the grounded capacitor device, and the inductor component includes: an inductor substrate and a conductive wire; the inductor substrate is provided with a through hole penetrating its thickness; the conductive wire alternately passes through the through hole from opposite sides of the inductor substrate to form an inductor with a certain three-dimensional space, which can improve the problem of electromagnetic coupling caused by the existence of parallel components of two bonding wires in the traditional solution, thereby reducing the loss of the output signal and increasing the power amplifier efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0014] Figure 1 It is a circuit schematic diagram of a radio frequency power amplifier device in the related art;

[0015] Figure 2 It is a structural schematic diagram of a radio frequency power amplifier device in the related art;

[0016] Figure 3 A schematic diagram of the structure of a radio frequency power amplifier device provided in an embodiment of the present application;

[0017] Figure 4 A perspective view of a heavy inductor component of a radio frequency power amplifier device provided in an embodiment of the present application;

[0018] Figure 5 A schematic diagram of the structure of another radio frequency power amplifier device provided in an embodiment of the present application;

[0019] Figure 6 A side view of an inductor component disposed on a grounded capacitor component in a radio frequency power amplifier device provided in an embodiment of the present application;

[0020] Figure 7 A circuit schematic diagram of another radio frequency power amplifier device provided in an embodiment of the present application;

[0021] Figure 8 A schematic structural diagram of a grounded capacitor device in another radio frequency power amplifier device provided in an embodiment of the present application;

[0022] Fig. 9 A top view of a grounded capacitor device in another radio frequency power amplifier device provided in an embodiment of the present application;

[0023] Fig.10 This is a diagram showing the relationship between mutual inductance and equivalent resistance in RF power amplifier devices.

[0024] Reference numerals:

[0025] 1-input matching capacitor chip; 2-active device; 3-grounding capacitor device; 4-inductor component; 5-frame substrate; 6-output matching network;

[0026] 11-first lead; 12-second lead; 13-third lead; 14-fourth lead;

[0027] 21-first bonding wire; 22-second bonding wire; 23-third bonding wire; 24-fourth bonding wire; 25-fifth bonding wire;

[0028] 31-first electrode layer; 32-second electrode layer; 33-substrate; 34-capacitor; 35-conductive column;

[0029] 41 - inductor base; 42 - through hole; 43 - metal wire; 44 - inductor input electrode; 45 - inductor output electrode. DETAILED DESCRIPTION

[0030] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0031] This embodiment provides a radio frequency power amplifier device, which can improve the problem of electromagnetic coupling caused by parallel leads in traditional solutions.

[0032] like Figure 3 As shown, the RF power amplifier device provided in this embodiment includes: an active device 2, a grounded capacitor device 3 and an inductor component 4. The active device 2 and the grounded capacitor device 3 are arranged on the frame substrate 5 at intervals, specifically arranged in sequence and at intervals along the first direction (ie, the X direction).

[0033] The inductor component 4 is disposed on the grounded capacitor device 3, and the inductor component 4 is connected between the active device 2 and the grounded capacitor device 3. The inductor component 4 can partially replace the equivalent inductance formed by the third lead 13 in the traditional solution, the active device 2 and the inductor component 4 are connected through a shorter bonding wire, and the inductor component 4 and the grounded capacitor device 3 can be connected through a bonding wire or directly through a pad.

[0034] The inductor assembly 4 includes: an inductor substrate and conductive wires, wherein the inductor substrate is provided with through holes penetrating through the thickness thereof; the conductive wires alternately pass through the through holes from opposite sides of the inductor substrate to form an inductor.

[0035] In addition, the connection of other devices can refer to the traditional solution. For example, the RF power amplifier device also includes: an input matching capacitor chip 1. The input matching capacitor chip 1 is electrically connected to the input end through a first bonding wire 21, the input matching capacitor chip 1 is electrically connected to the active device 2 through a second bonding wire 22, the active device 2 is electrically connected to the inductor component 4 through a third bonding wire 23, and the active device 2 is also electrically connected to the output end through a fourth bonding wire 24.

[0036] Since the inductor component 4 can partially replace the equivalent inductance formed by the third lead 13 in the traditional solution, the length of the third bonding wire 23 is shorter, reducing the parallel component between the third bonding wire 23 and the fourth bonding wire 24, thereby reducing the electromagnetic coupling of the inductance formed by the third bonding wire 23 and the fourth bonding wire 24, reducing the loss of the output signal, and increasing the power amplifier efficiency.

[0037] The technical solution provided in this embodiment is that the RF power amplifier device includes: an active device, a grounded capacitor device and an inductor component; the inductor component is arranged on the grounded capacitor device; the inductor component is connected between the active device and the grounded capacitor device, and the inductor component includes: an inductor substrate and a conductive wire; the inductor substrate is provided with a through hole penetrating its thickness; the conductive wire alternately passes through the through hole from opposite sides of the inductor substrate to form an inductor with a certain three-dimensional space, which can improve the problem of electromagnetic coupling caused by the existence of parallel components of two bonding wires in the traditional solution, thereby reducing the loss of the output signal and increasing the power amplifier efficiency.

[0038] like Figure 4 As shown, the inductor component 4 provided in this embodiment can be implemented as follows: the inductor substrate 41 can be in the shape of a rectangular parallelepiped, and its height dimension is smaller than its length dimension and also smaller than its width dimension, and its height direction serves as the thickness direction of the inductor substrate 41. At least two rows of through holes 42 are arranged along the thickness direction of the inductor substrate 41, and the conductive wires alternately pass through at least two rows of through holes according to the arrangement order of the through holes to form an inductor.

[0039] The above-mentioned inductor component 4 can be formed in a certain low-resistance substrate and has a 3D spatial structure. Most of the magnetic lines of force will pass through the space surrounded by the spiral metal, and the magnetic field strength in this surrounded space is the strongest. When the inductor is placed on a low-resistance substrate, its magnetic field distribution will not change much. The strongest magnetic field is still concentrated inside the inductor. Correspondingly, the eddy current generated on the low-resistance substrate is much smaller. Through simulation, it is found that the Q value of a 3D inductor can be around 70. When it is placed on a low-resistance substrate, its Q value drops to around 50, but it is still much higher than the Q value of a planar inductor made directly on a low-resistance substrate.

[0040] The low-resistance substrate may be a silicon carbide substrate, a silicon nitride substrate, a glass substrate, etc. In this embodiment, a glass substrate is used as an example. The conductive wire is specifically a metal wire 43. Figure 4 As shown, multiple through-thickness through-holes 42 are made in the glass substrate, and metal wires 43 are made on the upper and lower surfaces of the glass substrate to form a 3D inductor, such as a 3D spiral inductor. Using the glass substrate as a low-resistance substrate to make a 3D inductor has low loss and low cost.

[0041] Specifically, two rows of through holes 42 are provided on the inductor substrate 41. The metal wire 43 passes upward through the first through hole in the first row, then passes downward through the first through hole in the second row, then passes upward through the second through hole in the first row, then passes downward through the second through hole in the second row, and so on, until passing through the last through hole in the two rows.

[0042] When a 3D inductor is disposed on the glass substrate, the inductor component 4 has an inductor input electrode 44 and an inductor output electrode 45, the inductor input electrode 44 is electrically connected to the active device 2, and the inductor output electrode 45 is electrically connected to the grounded capacitor device 3. Specifically, electrode through holes are respectively disposed at both ends of the glass substrate, and both ends of the metal wire 43 pass through the electrode through holes, respectively, to form the inductor input electrode 44 and the inductor output electrode 45.

[0043] The inductor input electrode 44 and the inductor output electrode 45 can be disposed on the same side of the inductor component 4, or respectively disposed on both sides of the inductor component 4. This embodiment is described by taking the inductor input electrode 44 and the inductor output electrode 45 disposed on the same side of the inductor component 4 as an example.

[0044] One implementation method is: Figure 3Taking the direction as an example, the inductor component 4 is arranged on the grounded capacitor device 3 according to the inductor input electrode 44 and the inductor output electrode 45 being located above the grounded capacitor device 3 (that is, the inductor input electrode 44 and the inductor output electrode 45 are away from the grounded capacitor device 3, the upright direction). The inductor input electrode 44 and the inductor output electrode 45 are electrically connected to the electrode pads corresponding to the substrate of the grounded capacitor device 3 through shorter bonding wires. Among them, the electrode pad electrically connected to the inductor input electrode 44 is also electrically connected to the active device 2 through the third bonding wire 23, and the electrode pad electrically connected to the inductor output electrode 45 is also electrically connected to the first electrode plate of the grounded capacitor device 3 through the bonding wire. Alternatively, the above-mentioned inductor input electrode 44 can also be directly electrically connected to the active device 2 through the bonding wire, and then there is no need to set the electrode pad corresponding to the inductor input electrode 44 on the grounded capacitor device 3.

[0045] Another implementation method is: the inductor component 4 is arranged on the grounded capacitor device 3 according to the inductor input electrode 44 and the inductor output electrode 45 being located below the grounded capacitor device 3 (i.e., the inductor input electrode 44 and the inductor output electrode 45 are facing the grounded capacitor device 3, the flip-chip direction). The conductive pillars 35 are respectively connected below the inductor input electrode 44 and the inductor output electrode 45, and are fixed and electrically connected to the corresponding pads of the grounded capacitor device 3 through the conductive pillars 35. Among them, the electrode pad electrically connected to the inductor input electrode 44 is electrically connected to the active device 2 through the third bonding wire 23, and the electrode pad electrically connected to the inductor output electrode 45 is directly electrically connected to the first electrode plate of the grounded capacitor device 3 through the routing of the substrate of the grounded capacitor device 3. This solution does not require wire bonding operation on the inductor component 4, which further improves the interference problem caused by the parallel component of the bonding wire and further improves the device performance.

[0046] The wiring of the substrate of the grounded capacitor device 3 is copper wire, the conductive column 35 is a copper column, and the inductor input electrode 44 and the inductor output electrode 45 are also copper electrodes.

[0047] For the above solution, the RF power amplifier device further includes: an output matching network 6. The active device 2, the grounded capacitor device 3 and the output matching network 6 are arranged at intervals along the first direction (X direction). The active device 2 is also electrically connected to the output matching network 6 through a bonding wire (a fourth bonding wire 24) crossing the grounded capacitor device 3 to lead out the electrical signal of the active device 2.

[0048] Based on the above technical solution, this embodiment also provides another implementation method, such as Figures 5 to 9 As shown, the grounding capacitor device 3 includes: a substrate 33 and a capacitor 34 formed on the substrate 33 , and the inductor component 4 is disposed on the substrate 33 and spaced apart from the capacitor 34 along the second direction (Y direction).

[0049] A first electrode layer 31 and a second electrode layer 32 are also provided on the substrate 33 of the grounded capacitor device 3, and the first electrode layer 31 is electrically connected to the second electrode layer 32. The first electrode layer 31 is located at one end of the substrate 33 close to the active device 2, and the first electrode layer 31 is electrically connected to the active device 2 through a bonding wire (a third bonding wire 23), and the first electrode layer 31 is also electrically connected to the inductor component 4. The second electrode layer 32 is located at one end of the substrate 33 away from the active device 2, and the second electrode layer 32 is electrically connected to the output matching network 6 through a bonding wire (a fifth bonding wire 25). Figure 7 for Figure 5 Equivalent circuit schematic of the scheme shown.

[0050] Furthermore, the capacitor 34 and the inductor component 4 are located between the first electrode layer 31 and the second electrode layer 32. The first electrode layer 31 and the second electrode layer 32 are located on the outside, which is more convenient for connecting bonding wires, and there are no parallel components between the bonding wires.

[0051] In the above scheme, the signal of the active device 2 is led to the grounded capacitor device 3 through the third bonding wire 23, and then leads out through the first electrode layer 31 and the second electrode layer 32 in sequence through the fifth bonding wire 25, which completely replaces the third lead 13 in the traditional scheme, thereby eliminating the inductive electromagnetic coupling caused by the parallel components between the bonding wires, thereby reducing the loss of the output signal and improving the power amplifier efficiency.

[0052] The above device adopts a cavity packaging method. Cavity packaging refers to a hollow sealed tube shell with a heat dissipation flange at the bottom, one or more thin metal pins on the left and right sides, and a ceramic or polymer material cover on the top. The bottom flange of this package tube shell has good heat dissipation and grounding capabilities. The active device 2 and the matching capacitor chip used for input and output are welded on the flange by sintering. The internal cavity is conducive to installing bonding wires and reducing parasitics of active FET transistors.

[0053] The active device 2 may be a field effect transistor (FET), or a laterally diffused metal oxide semiconductor (LDMOS) or a field effect transistor made of gallium nitride (GaN).

[0054] like Fig.10 As shown, in the conventional solution, the inductance formed by the third lead 13 and the fourth lead 14 has mutual inductance, and the greater the mutual inductance, the greater the equivalent resistance, resulting in a greater loss of the output signal, thereby reducing the power amplifier efficiency. In the present application, there is no electromagnetic coupling between the bonding wires, that is, there is no mutual inductance, which directly reduces the equivalent resistance, thereby reducing the loss of the output signal and improving the power amplifier efficiency.

[0055] The above-mentioned RF power amplifier device has been tested and found to have an efficiency about 2% higher than that of the traditional solution and will not affect the gain of the amplifier.

[0056] On the basis of the above technical solution, this embodiment further provides a method for manufacturing a radio frequency power amplifier device, comprising the following steps:

[0057] Step 1: arrange active devices and grounded capacitor devices on the frame substrate.

[0058] In this step, the electrodes of the active device and the grounded capacitor device are welded.

[0059] Step 2: Dispose the inductor component on the grounded capacitor component to electrically connect the inductor component to the grounded capacitor component.

[0060] This step specifically involves connecting conductive columns to the inductor input electrode and the inductor output electrode of the inductor assembly, and then welding the conductive columns to the electrode pads corresponding to the grounded capacitor device.

[0061] Step 3: Connect bonding wires between the inductor component and the active device.

[0062] Bonding wires are also connected to other devices accordingly. For example, in the above scheme, a first bonding wire 21 is connected between the input matching capacitor chip 1 and the input end, a second bonding wire 22 is connected between the input matching capacitor chip 1 and the active device 2, and a third bonding wire 23 is connected between the active device 2 and the inductor component 4.

[0063] Reference Figure 3 The fourth bonding wire 24 is connected between the active device 2 and the output matching network 6. Figure 5 The fifth bonding wire 25 is connected between the grounded capacitor device 3 and the output matching network 6 .

[0064] The radio frequency power device obtained by the above manufacturing method can improve the problem of electromagnetic coupling caused by the existence of parallel components of two bonding wires in the traditional solution, thereby reducing the loss of the output signal and increasing the power amplifier efficiency.

[0065] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0066] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0067] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0068] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0069] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A radio frequency power amplifier device, characterized in that: include: Active devices, grounded capacitor devices, and inductive components; The inductor component is arranged on the grounded capacitor component; The inductor component is connected between the active device and the grounded capacitor device; The inductor assembly comprises: an inductor substrate and a conductive wire; the inductor substrate is provided with a through hole penetrating the thickness thereof; the conductive wire alternately passes through the through holes from opposite sides of the inductor substrate to form an inductor; at least two rows of through holes are provided on the inductor substrate, and the conductive wire alternately passes through the at least two rows of through holes according to the arrangement sequence of the through holes to form an inductor; the inductor assembly has an inductor input electrode and an inductor output electrode; the inductor assembly is fixed to the grounded capacitor device in the direction that the inductor output electrode faces the grounded capacitor device; the inductor output electrode is connected to the first electrode plate of the grounded capacitor device through a conductive column; and the two ends of the conductive wire respectively form the inductor input electrode and the inductor output electrode.

2. The radio frequency power amplifier device according to claim 1, characterized in that: The inductor substrate is a glass substrate.

3. The radio frequency power amplifier device according to claim 1, characterized in that: The inductor input electrode is electrically connected to the active device through a bonding wire.

4. The radio frequency power amplifier device according to claim 1, characterized in that: The radio frequency power amplifier device also includes: an output matching network; the active device, the grounded capacitor device and the output matching network are arranged at intervals along the first direction.

5. The radio frequency power amplifier device according to claim 4, characterized in that: The active device is also electrically connected to the output matching network through a bond wire across the grounded capacitor device.

6. The radio frequency power amplifier device according to claim 4, characterized in that: A first electrode layer and a second electrode layer are also provided on the substrate of the grounded capacitor device, and the first electrode layer is electrically connected to the second electrode layer; the first electrode layer is located at one end of the substrate close to the active device, and the first electrode layer is electrically connected to the active device through a bonding wire, and the first electrode layer is also electrically connected to the inductor component; the second electrode layer is located at one end of the substrate away from the active device, and the second electrode layer is electrically connected to the output matching network through a bonding wire.

7. The radio frequency power amplifier device according to claim 6, characterized in that: The grounding capacitor device comprises: a substrate and a capacitor formed on the substrate, and the inductor component is arranged on the substrate and spaced apart from the capacitor along the second direction.

8. The radio frequency power amplifier device according to claim 7, characterized in that: The capacitor and inductor components are located between the first electrode layer and the second electrode layer.

9. A method for manufacturing a radio frequency power amplifier device, characterized in that: include: An input matching capacitor chip, active devices and grounding capacitor devices are arranged on the frame substrate; The inductor assembly is arranged on the grounded capacitor device so that the inductor assembly is electrically connected to the grounded capacitor device; the inductor assembly comprises: an inductor substrate and a conductive wire; the inductor substrate is provided with a through hole penetrating the thickness thereof; the conductive wire alternately passes through the through hole from opposite sides of the inductor substrate to form an inductor; at least two rows of through holes are arranged on the inductor substrate, and the conductive wire alternately passes through at least two rows of through holes according to the arrangement sequence of the through holes to form an inductor; the inductor assembly has an inductor input electrode and an inductor output electrode; the inductor assembly is fixed to the grounded capacitor device in the direction that the inductor output electrode faces the grounded capacitor device; the inductor output electrode is connected to the first electrode plate of the grounded capacitor device through a conductive column; the two ends of the conductive wire respectively form the inductor input electrode and the inductor output electrode; Connecting a first bonding wire between the input end of the radio frequency power amplifier device and the input matching capacitor chip; Connecting a second bonding wire between the input matching capacitor chip and the active device; A third bonding wire is connected between the inductive component and the active device.

Images