A magnetically confined DC plasma glow discharge device and bonding equipment

Abstract

The present invention discloses a magnetic confinement direct current plasma glow discharge device and bonding equipment. The cathode plate has a receiving cavity, at least two anode rods are located in the receiving cavity, and at least two anode rods are arranged along a first direction; the cathode plate includes a first cathode plate, a second cathode plate and a third cathode plate; the second cathode plate and the third cathode plate are arranged opposite to each other along a second direction; the second cathode plate and the third cathode plate are both perpendicular to the first cathode plate; the first permanent magnet array and the second permanent magnet array are located outside the receiving cavity, and the first permanent magnet array and the second permanent magnet array are located on both sides of the cathode plate along the second direction; the first permanent magnet array and the second permanent magnet array are used to confine ions in the receiving cavity to the area between the two anode rods and the second cathode plate and between the two anode rods and the third cathode plate. The present invention can avoid the introduction of new impurity elements, prevent the particles generated in the receiving cavity from leaking out to cause contamination of the wafer bonding surface, and reduce the etching of the cathode plate by ions.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductors, and in particular to a magnetically confined direct current plasma glow discharge device and bonding equipment. Background Art

[0002] Semiconductor wafers can be bonded at room temperature by atomic beam irradiation to achieve surface activation. Irradiating the bonding surface with an atomic beam can remove surface contamination and oxide layers, produce a clean surface and suspended chemical bonds to achieve surface activation, and the activated wafer can be bonded at room temperature by lamination and pressurization.

[0003] At present, the conventional magnetically confined DC plasma glow discharge device arranges a magnet outside the gas discharge chamber, and then introduces the magnetic field into the gas discharge chamber through a magnetically conductive yoke. However, this scheme of coupling the magnetic field generated by the magnet into the gas discharge chamber through a magnetically conductive yoke will introduce new impurity elements into the gas discharge chamber, and there is a gap where the magnetic yoke penetrates the wall of the gas discharge chamber, causing the particles in the gas discharge chamber to leak. The leaked particles will contaminate the wafer bonding surface, and the magnet is located in the bonding chamber, and the magnetic field generated by the magnet will interfere with the bonding chamber, affecting the wafer bonding quality. In addition, in the process of irradiating the surface of the wafer by the conventional magnetically confined DC plasma glow discharge device, these particles are generated by the combination of carbon atoms generated by sputtering of ions colliding with the cathode plate, and are continuously accumulated in the gas discharge chamber, and the leaked particles will fall on the wafer surface to cause pollution. Summary of the invention

[0004] The present invention provides a magnetically confined DC plasma glow discharge device and bonding equipment, which can prevent the introduction of new impurity elements into a containing cavity, avoid the leakage of particles generated in the containing cavity to cause contamination of the wafer bonding surface, and reduce the etching of ions on the cathode plate.

[0005] In a first aspect, an embodiment of the present invention provides a magnetically confined DC plasma glow discharge device, comprising:

[0006] a cathode plate, at least two anode rods, a first permanent magnet array and a second permanent magnet array;

[0007] The cathode plate has a receiving cavity, at least two anode rods are located in the receiving cavity, and at least two anode rods are arranged along a first direction; at least two anode rods and the cathode plate are used to generate a bias electric field under an external voltage; the cathode plate includes a first cathode plate, a second cathode plate and a third cathode plate; the first cathode plate has an emission hole; the second cathode plate and the third cathode plate are arranged opposite to each other along a second direction; the second cathode plate and the third cathode plate are both perpendicular to the first cathode plate; wherein the anode rods extend along a third direction, the first direction is perpendicular to the first cathode plate, and the third direction, the second direction and the first direction are all perpendicular to each other;

[0008] The first permanent magnet array and the second permanent magnet array are located outside the accommodating cavity, and the first permanent magnet array and the second permanent magnet array are located on both sides of the cathode plate along the second direction; the first permanent magnet array and the second permanent magnet array are used to confine ions in the accommodating cavity to the area between the two anode rods and the second cathode plate and between the two anode rods and the third cathode plate.

[0009] Optionally, the cathode plate further includes a fourth cathode plate, a fifth cathode plate and a sixth cathode plate; the area surrounded by the first cathode plate, the second cathode plate, the third cathode plate, the fourth cathode plate, the fifth cathode plate and the sixth cathode plate is the accommodating cavity;

[0010] The fifth cathode plate and the sixth cathode plate are arranged opposite to each other along the third direction; the first cathode plate and the fourth cathode plate are arranged opposite to each other along the third direction;

[0011] The plates are arranged opposite to each other along a first direction;

[0012] The first permanent magnet array is arranged adjacent to the second cathode plate, the second permanent magnet array is arranged adjacent to the third cathode plate, the second cathode plate and the third cathode plate are parallel to the anode rod, and the first permanent magnet array and the second permanent magnet array are arranged symmetrically relative to the anode rod.

[0013] Optionally, the first permanent magnet array and the second cathode plate are spaced apart by a first preset size;

[0014] The second permanent magnet array and the third cathode plate are spaced apart by a first preset size, wherein the first preset size is greater than zero and less than a preset value.

[0015] Optionally, the first preset size is less than or equal to 30 mm.

[0016] Optionally, the first permanent magnet array includes a first permanent magnet, a second permanent magnet and a third permanent magnet; the second permanent magnet array includes a fourth permanent magnet, a fifth permanent magnet and a sixth permanent magnet;

[0017] The first permanent magnet, the second permanent magnet and the third permanent magnet are arranged in sequence along the third direction; the fourth permanent magnet, the fifth permanent magnet and the sixth permanent magnet are arranged in sequence along the third direction;

[0018] The magnetization intensity direction of the first permanent magnet is opposite to that of the third permanent magnet, and the magnetization intensity direction of the second permanent magnet is perpendicular to that of the first permanent magnet; the magnetization intensity direction of the second permanent magnet is parallel to the third direction;

[0019] The magnetization intensity direction of the fourth permanent magnet is opposite to that of the sixth permanent magnet, and the magnetization intensity direction of the fifth permanent magnet is perpendicular to that of the fourth permanent magnet; the magnetization intensity direction of the first permanent magnet is the same as that of the fourth permanent magnet; the magnetization intensity direction of the third permanent magnet is the same as that of the sixth permanent magnet; and the magnetization intensity direction of the second permanent magnet is opposite to that of the fifth permanent magnet.

[0020] Optionally, the region where the emission hole is located is located between the second permanent magnet and the fifth permanent magnet, and the size of the second permanent magnet and the fifth permanent magnet along the third direction is greater than or equal to the length of the region where the emission hole is located on the first cathode plate along the third direction.

[0021] Optionally, the magnetization intensity of the first permanent magnet array and the magnetization intensity of the second permanent magnet array are both greater than or equal to 0.5T and less than or equal to 1.2T.

[0022] Optionally, the magnetically confined DC glow discharge plasma device further comprises: a power supply, the power supply is located outside the accommodating cavity, the negative electrode of the power supply is electrically connected to the cathode plate; the positive electrode of the power supply is electrically connected to the anode rod; the power supply is used to apply voltage to the anode rod;

[0023] The voltage applied by the power supply to the anode rod is greater than or equal to 300V and less than or equal to 3000V.

[0024] Optionally, at least two through holes are provided on the fifth cathode plate and the sixth cathode plate;

[0025] The through holes of the fifth cathode plate are arranged in one-to-one correspondence with the through holes of the sixth cathode plate; the diameter of the through holes is larger than the diameter of the anode rod; the anode rod passes through the through holes;

[0026] The diameter of the anode rod is greater than or equal to 1 mm and less than or equal to 20 mm.

[0027] According to another aspect of the present invention, there is provided a bonding device, comprising the magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention.

[0028] In the technical solution provided in the embodiment of the present invention, the cathode plate has a accommodating cavity, at least two anode rods are located in the accommodating cavity, and at least two anode rods are arranged along a first direction, at least two anode rods and the cathode plate are used to generate a bias electric field under an applied voltage, the bias electric field is used to ionize the gas molecules in the accommodating cavity, the first permanent magnet array and the second permanent magnet array are located outside the accommodating cavity, the magnetic field generated by the first permanent magnet array and the second permanent magnet array passes through the cathode plate into the accommodating cavity, and there is no need to introduce the magnetic field into the accommodating cavity through a magnetic yoke, thereby avoiding impurity elements from entering the accommodating cavity due to gaps on the wall of the accommodating cavity, and also avoiding leakage of particles in the accommodating cavity to contaminate the wafer bonding surface, and at the same time, the modulus of the magnetic field strength generated on the side of the first permanent magnet array away from the second cathode plate is weaker and the second permanent magnet array is away from the third cathode plate. The modulus of the magnetic field strength generated on one side of the plate is relatively weak, thereby avoiding the interference of the magnetic field generated by the magnet in the traditional magnetic confinement DC plasma glow discharge device with the bonding cavity. In addition, the modulus of the magnetic field strength generated on the side of the first permanent magnet array close to the second cathode plate is relatively strong, and the modulus of the magnetic field strength generated on the side of the second permanent magnet array close to the third cathode plate is relatively strong, so that the ions in the accommodating cavity are affected by the orthogonal electric and magnetic fields in the area between the two anode rods and the second cathode plate and between the two anode rods and the third cathode plate. The ions move toward the first cathode plate under the influence of the orthogonal electric and magnetic fields, and the high-concentration ions are concentrated in the area between the first cathode plate and the anode rod, thereby reducing the collision of the ions with other cathode plates, and reducing the etching of the cathode plates and the pollution of the wafer surface by impurity atoms generated by the sputtering of the cathode plates.

[0029] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 It is a front view of a magnetically confined DC plasma glow discharge device;

[0032] Figure 2 It is a top view of a magnetically confined DC plasma glow discharge device;

[0033] Figure 3 It is a structural schematic diagram of a magnetically confined DC plasma glow discharge device provided by an embodiment of the present invention;

[0034] Figure 4 It is a structural cross-sectional view of a magnetically confined DC plasma glow discharge device along the A1-A2 direction provided by an embodiment of the present invention;

[0035] Figure 5 It is a structural cross-sectional view along the B1-B2 direction of a magnetically confined DC plasma glow discharge device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0037] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0038] Figure 1 It is a front view of a magnetically confined DC plasma glow discharge device. Figure 2 It is a top view of a magnetically confined DC plasma glow discharge device. Figure 1-Figure 2 A magnetically confined DC plasma glow discharge device is shown, see Figure 1 and Figure 2The magnetic confinement DC plasma glow discharge device is composed of a double anode rod 2 and a cathode plate 1. In order to solve the problem that the leaked particles will fall on the surface of the wafer and cause pollution, in the related art, a magnet 9 is arranged outside the gas discharge chamber 16, and then the magnetic field is introduced into the gas discharge chamber 16 through a magnetic yoke 17. After an inert gas such as argon, neon or xenon is fed into the gas discharge chamber 16, the gas molecules are ionized by applying a high voltage between the cathode plate 1 and the anode rod 2. The electrons drift laterally under the action of the orthogonal electric and magnetic fields in the direction of E×B. On both sides of the anode rod 2, the electric and magnetic fields are opposite, so the electrons drift downward, and the ions generated by the collision are also gathered on the lower side and are injected into the wafer through the emission hole 5 under the drive of the electric field. However, this scheme of coupling the magnetic field generated by the magnet 9 into the gas discharge chamber 16 through the magnetic yoke 17 will introduce new impurity elements into the gas discharge chamber 16, and there is a gap where the yoke 17 penetrates the wall of the gas discharge chamber 16, so that the particles in the gas discharge chamber 16 leak out, and the leaked particles will contaminate the wafer bonding surface, and the magnet 9 is located in the bonding chamber 18, and the magnetic field it generates will interfere with the bonding chamber 18, affecting the wafer bonding quality. In addition, in the process of irradiating the surface of the wafer by the traditional magnetic confinement DC plasma glow discharge device, these particles are generated by the combination of carbon atoms generated by ion collision cathode plate sputtering, and continuously accumulate in the gas discharge chamber 16, and the leaked particles will fall on the wafer surface to cause pollution.

[0039] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0040] Figure 3 It is a structural schematic diagram of a magnetically confined DC plasma glow discharge device provided in an embodiment of the present invention. Figure 4 It is a structural cross-sectional view along the A1-A2 direction of a magnetically confined DC plasma glow discharge device provided by an embodiment of the present invention. Figure 5 1 is a structural cross-sectional view of a magnetically confined DC plasma glow discharge device along the B1-B2 direction provided by an embodiment of the present invention. Figure 3-Figure 5The magnetic confinement DC plasma glow discharge device comprises: a cathode plate 1, at least two anode rods 2, a first permanent magnet array 3 and a second permanent magnet array 4; the cathode plate 1 has a receiving cavity 6, at least two anode rods 2 are located in the receiving cavity 6, and at least two anode rods 2 are arranged along a first direction; at least two anode rods 2 and the cathode plate 1 are used to generate a bias electric field under an applied voltage; the cathode plate 1 comprises a first cathode plate 10, a second cathode plate 11 and a third cathode plate 12; the first cathode plate 10 has an emission hole 5; the second cathode plate 11 and the third cathode plate 12 are arranged opposite to each other along a second direction Y; the second cathode plate 11 and the third cathode plate 12 are both perpendicular to the first cathode plate 10; wherein, the anode rod 2 extends along the third direction Z, the first direction X is perpendicular to the first cathode plate 10, and the third direction Z, the second direction Y and the first direction X are all perpendicular to each other; the first permanent magnet array 3 and the second permanent magnet array 4 are located outside the accommodating cavity 6, the first permanent magnet array 3 and the second permanent magnet array 4 are located on both sides of the cathode plate 1 along the second direction Y, and the first permanent magnet array 3 and the second permanent magnet array 4 are used to confine ions in the accommodating cavity 6 to the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12.

[0041] The cathode plate 1 and the anode rod 2 are made of graphite. The cathode plate 1 and the anode rod 2 generate a bias electric field under an applied voltage to ionize gas molecules into ions and electrons, and also to provide energy for ion emission to the wafer surface. The first permanent magnet array 3 and the first permanent magnet array 4 can be Halbach permanent magnet arrays. The first permanent magnet array 3 and the second permanent magnet array 4 can respectively include three magnets with different magnetization directions, so that the modulus of the magnetic field strength generated by the first permanent magnet array 3 close to the second cathode plate 11 is relatively strong, and the modulus of the magnetic field strength generated by the side away from the second cathode plate 11 is relatively weak, or almost no magnetic field is generated; the modulus of the magnetic field strength generated by the second permanent magnet array 4 close to the third cathode plate 12 is relatively strong, and the modulus of the magnetic field strength generated by the side away from the third cathode plate 12 is relatively weak, or almost no magnetic field is generated. The first permanent magnet array 3 and the first permanent magnet array 4 are used to confine ions to the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12. The first direction X is perpendicular to the extending direction of the anode rod 2 , and the first direction X is perpendicular to the first cathode plate 10 , and the second direction Y is parallel to the first cathode plate 10 .

[0042] Specifically, when voltage is applied to at least two anode rods 2, a bias electric field is generated between the anode rod 2 and the cathode plate 1, and the first permanent magnet array 3 and the first permanent magnet array 4 generate magnetic fields of equal magnitude and opposite directions on both sides of the anode rod 2 inside the accommodating cavity 6, wherein the direction of the magnetic field is close to parallel to the direction of the length of the anode rod 2. The electrons generated by the gas glow discharge are affected by the orthogonal electric and magnetic fields in the region between the second cathode plate 11 and the anode rod 2 and between the third anode plate 12 and the anode rod 2, and the center of the rotation drifts toward the first cathode plate 10 while performing Larmor rotation around the magnetic lines of force. During the movement, high-concentration electrons produce high-concentration ions after ionization collision with gas atoms. The ions are affected by the orthogonal electric and magnetic fields in the region between the second cathode plate 11 and the anode rod 2 and between the third cathode plate 12 and the anode rod 2. The ions are confined in the region between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12, and move toward the first cathode plate 10. The ions are accelerated toward the first cathode plate 10 by the electric field between the anode rod 2 and the first cathode plate 10, and some of the ions are emitted from the emission hole 5 on the first cathode plate 10.

[0043] In the technical solution provided in the embodiment of the present invention, the cathode plate 1 has a accommodating cavity 6, at least two anode rods 2 are located in the accommodating cavity 6, and at least two anode rods 2 are arranged along a first direction X, at least two anode rods 2 and the cathode plate 1 are used to generate a bias electric field under an applied voltage, and the bias electric field is used to ionize the gas molecules in the accommodating cavity 6, the first permanent magnet array 3 and the second permanent magnet array 4 are located outside the accommodating cavity 6, and the magnetic field generated by the first permanent magnet array 3 and the second permanent magnet array 4 passes through the cathode plate 1 and enters the accommodating cavity 6, and there is no need to introduce the magnetic field into the accommodating cavity 6 through a magnetic yoke, thereby avoiding impurity elements from entering the accommodating cavity 6 due to gaps on the wall of the accommodating cavity 6, and also avoiding leakage of particles in the accommodating cavity 6 to contaminate the wafer bonding surface, and at the same time, the modulus of the magnetic field strength generated by the first permanent magnet array 3 away from the second cathode plate 11 is weaker, and the second permanent magnet array 4 is away from the third cathode The modulus of the magnetic field strength generated on one side of the pole plate 12 is relatively weak, which avoids the magnetic field generated by the magnet in the traditional magnetic confinement DC plasma glow discharge device from interfering with the bonding cavity. In addition, the modulus of the magnetic field strength generated on the side of the first permanent magnet array 3 close to the second cathode plate 11 is relatively strong, and the modulus of the magnetic field strength generated on the side of the second permanent magnet array 4 close to the third cathode plate 12 is relatively strong, so that the ions in the accommodating cavity 6 are affected by the orthogonal electric and magnetic fields in the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12. The ions move toward the first cathode plate 10 under the influence of the orthogonal electric and magnetic fields, and the high-concentration ions are concentrated in the area between the first cathode plate 10 and the anode rod 2, which reduces the collision of the ions with other cathode plates 1, reduces the etching of the cathode plate 1 and reduces the contamination of the wafer surface by impurity atoms generated by the sputtering of the cathode plate 1.

[0044] See also Figure 3-Figure 5 Optionally, on the basis of the above embodiment, the cathode plate 1 further includes a fourth cathode plate 13, a fifth cathode plate 14 and a sixth cathode plate 15; the area enclosed by the first cathode plate 10, the second cathode plate 11, the third cathode plate 12, the fourth cathode plate 13, the fifth cathode plate 14 and the sixth cathode plate 15 is the accommodating chamber 6; the fifth cathode plate 14 and the sixth cathode plate 15 are arranged relatively to each other along the third direction Z; the first cathode plate 10 and the fourth cathode plate 13 are arranged relatively to each other along the first direction X; the first permanent magnet array 3 is arranged adjacent to the second cathode plate 11, the second permanent magnet array 4 is arranged adjacent to the third cathode plate 12, the second cathode plate 11 and the third cathode plate 12 are parallel to the anode rod 2, and the first permanent magnet array 3 and the second permanent magnet array 4 are symmetrically arranged relative to the anode rod 2.

[0045] Among them, the fourth cathode plate 13 is perpendicular to the second cathode plate 11 and the third cathode plate 12, the fifth cathode plate 14 is perpendicular to the first cathode plate 10, the second cathode plate 11, the third cathode plate 12 and the fourth cathode plate 13; the sixth cathode plate 15 is perpendicular to the first cathode plate 10, the second cathode plate 11, the third cathode plate 12 and the fourth cathode plate 13.

[0046] Specifically, the first permanent magnet array 3 and the second cathode plate 11 are arranged adjacent to each other, so that the modulus of the magnetic field strength generated by the first permanent magnet array 3 in the area close to the second cathode plate 11 in the accommodating cavity 6 is relatively large, and the second permanent magnet array 4 and the third cathode plate 12 are arranged adjacent to each other, so that the modulus of the magnetic field strength generated by the second permanent magnet array 4 in the area close to the third cathode plate 12 in the accommodating cavity 6 is relatively large, and the first permanent magnet array 3 and the second permanent magnet array 4 are symmetrically arranged relative to the anode rod 2, so that the modulus of the magnetic field strength in the accommodating cavity 6 is symmetrically distributed along the line connecting the two anode rods 2, so that electrons collide with gas molecules to generate ions that gather in the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12, and move to the area between the anode rod 2 and the first cathode plate 10, thereby avoiding collision of the ions with the second cathode plate 11, the third cathode plate 12 and the fourth cathode plate 13.

[0047] In the embodiment of the present invention, the first permanent magnet array 3 is arranged adjacent to the second cathode plate 11, and the second permanent magnet array 4 is arranged adjacent to the third cathode plate 12, so that the modulus of the magnetic field strength in the accommodating cavity 6 is large, and the first permanent magnet array 3 and the second permanent magnet array 4 are symmetrically arranged relative to the anode rod 2, so that the modulus of the magnetic field strength in the accommodating cavity 6 is symmetrically distributed along the line connecting the two anode rods 2, so that more ions move toward the first cathode plate 10 under the action of the electric field and the magnetic field, and more ions are confined in the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12, thereby reducing the etching of the second cathode plate 11, the third cathode plate 12 and the fourth cathode plate 13 by ions, reducing the generation of carbon atom particles, and thereby reducing the contamination of the wafer bonding surface by impurity atoms generated by sputtering of the cathode plate 1.

[0048] See also Figure 3 and Figure 4 Optionally, based on the above embodiment, the first permanent magnet array 3 and the second cathode plate 11 are spaced apart by a first preset size; the second permanent magnet array 4 and the third cathode plate 12 are spaced apart by a first preset size, wherein the first preset size is greater than zero and less than a preset value.

[0049] Specifically, if the first preset size is greater than the preset value, the modulus of the magnetic field strength in the accommodating chamber 6 will be weakened, and more ions cannot be confined in the area between the two anode rods 2 and the second cathode plate 11 and between the two anode rods 2 and the third cathode plate 12. Therefore, the first preset size is greater than zero and less than the preset value, so that the modulus of the magnetic field strength in the area between the anode rod 2 and the second cathode plate 11 and between the anode rod 2 and the third cathode plate 12 is stronger, and more electrons and ions can be confined.

[0050] Such a configuration can reduce the collision of ions on the second cathode plate 11 and the third cathode plate 12 to a greater extent, reduce the etching of the second cathode plate 11 and the third cathode plate 12 by ions, and reduce the contamination of the wafer bonding surface.

[0051] See also Figure 3 and Figure 4 , Optionally, based on the above embodiment, the first preset size is less than or equal to 30 mm.

[0052] In an embodiment of the present invention, by setting the first preset size to be less than or equal to 30 mm, the modulus of the magnetic field strength in the accommodating cavity 6 is maximized, and the number of ions constrained in the area between the anode rod 2 and the second cathode plate 11 and in the area between the anode rod 2 and the third cathode plate 12 is maximized, thereby greatly reducing the etching of the second cathode plate 11 and the third cathode plate 12 and the contamination of the wafer bonding surface.

[0053] See also Figure 3 and Figure 5 Optionally, on the basis of the above embodiment, the first permanent magnet array 3 includes a first permanent magnet 301, a second permanent magnet 302 and a third permanent magnet 303; the second permanent magnet array 4 includes a fourth permanent magnet 401, a fifth permanent magnet 402 and a sixth permanent magnet 403; the first permanent magnet 301, the second permanent magnet 302 and the third permanent magnet 303 are arranged in sequence along the third direction; the fourth permanent magnet 401, the fifth permanent magnet 402 and the sixth permanent magnet 403 are arranged in sequence along the third direction; the magnetization intensity direction of the first permanent magnet 301 is opposite to the magnetization intensity direction of the third permanent magnet 303, and the magnetization intensity direction of the second permanent magnet 302 is opposite to the magnetization intensity direction of the third permanent magnet 303. The magnetization intensity direction of the second permanent magnet 302 is parallel to the third direction Z; the magnetization intensity direction of the fourth permanent magnet 401 is opposite to that of the sixth permanent magnet 403, and the magnetization intensity direction of the fifth permanent magnet 402 is perpendicular to that of the fourth permanent magnet 401; the magnetization intensity direction of the first permanent magnet 301 is the same as that of the fourth permanent magnet 401; the magnetization intensity direction of the third permanent magnet 303 is the same as that of the sixth permanent magnet 403; the magnetization intensity direction of the second permanent magnet 302 is opposite to that of the fifth permanent magnet 402.

[0054] The first permanent magnet 301, the second permanent magnet 302 and the third permanent magnet 303 all include a plurality of permanent magnets with the same magnetization direction. Similarly, the fourth permanent magnet 401, the fifth permanent magnet 402 and the sixth permanent magnet 403 all include a plurality of permanent magnets with the same magnetization direction.

[0055] Specifically, the first permanent magnet 301, the second permanent magnet 302 and the third permanent magnet 303 are arranged in sequence along the third direction Z, the magnetization intensity direction of the first permanent magnet 301 is opposite to the magnetization intensity direction of the third permanent magnet 303, and the magnetization intensity direction of the second permanent magnet 302 is perpendicular to the magnetization intensity direction of the first permanent magnet 301, so that the modulus of the magnetic field intensity generated by the first permanent magnet array 3 in the area between the anode rod 2 and the second cathode plate 11 is large, and the magnetic field lines generated in the area between the anode rod 2 and the second cathode plate 11 are transmitted into the accommodating cavity 6 along the third direction Z, and the modulus of the magnetic field intensity generated in the area of ​​the first permanent magnet array 3 away from the second cathode plate 11 is small, or even no magnetic field is generated. The fourth permanent magnet 401, the fifth permanent magnet 402 and the sixth permanent magnet 403 are arranged in sequence along the third direction, the magnetization intensity direction of the fourth permanent magnet 401 is opposite to the magnetization intensity direction of the sixth permanent magnet 403, and the magnetization intensity direction of the fifth permanent magnet 402 is perpendicular to the magnetization intensity direction of the fourth permanent magnet 401; so that the modulus of the magnetic field strength generated by the second permanent magnet array 4 in the area between the anode rod 2 and the third cathode plate 12 is large, and the magnetic field lines generated in the area between the anode rod 2 and the third cathode plate 12 are transmitted outward along the third direction Z through the accommodating cavity 6, and the modulus of the magnetic field strength generated in the area of ​​the second permanent magnet array 4 away from the third cathode plate 12 is small, or even no magnetic field is generated. The magnetization intensity direction of the first permanent magnet 301 is the same as that of the fourth permanent magnet 401; the magnetization intensity direction of the third permanent magnet 303 is the same as that of the sixth permanent magnet 403; the magnetization intensity direction of the second permanent magnet 302 is opposite to that of the fifth permanent magnet 402, so that the magnetization intensity direction of the first permanent magnet array 3 is opposite to that of the second permanent magnet array 4.

[0056] This arrangement can not only avoid collision between ions and the second cathode plate 11 and the third cathode plate 12, and reduce ion etching of the cathode plate 1, but also avoid the modulus of the magnetic field strength generated by the first permanent magnet array 3 and the second permanent magnet array 4 in the bonding cavity from affecting the quality of wafer bonding.

[0057] See also Figure 3-Figure 5Optionally, based on the above embodiment, the area where the emitting hole 5 is located is located between the second permanent magnet 302 and the fifth permanent magnet 402, and the size of the second permanent magnet 302 and the fifth permanent magnet 402 along the third direction is greater than or equal to the length of the area where the emitting hole 5 on the first cathode plate 10 is located along the third direction Z.

[0058] Specifically, the modulus of the magnetic field strength generated by the second permanent magnet 302 on the side close to the second cathode plate 11 is stronger than that of the first permanent magnet 301 and the third permanent magnet 303; the modulus of the magnetic field strength generated by the fifth permanent magnet 402 on the side close to the third cathode plate 12 is stronger than that of the fourth permanent magnet 401 and the sixth permanent magnet 403; and the area where the emission hole 5 is located is located between the second permanent magnet 302 and the fifth permanent magnet 402, and the size of the second permanent magnet 302 and the fifth permanent magnet 402 along the third direction Z is greater than or equal to the length of the area where the emission hole 5 on the first cathode plate 10 is located along the third direction Z, so that the modulus of the magnetic length strength generated by the second permanent magnet 302 and the fifth permanent magnet 402 in the area where the emission hole 5 on the first cathode plate 10 is located is large and evenly distributed, and more electrons and ions are confined in the area where the emission hole 5 is located. This arrangement avoids the collision of ions with the cathode plate 1, reduces the etching of the cathode plate 1, and reduces the pollution of the wafer bonding surface.

[0059] See also Figure 3 Optionally, based on the above embodiment, the magnetization intensity of the first permanent magnet array 3 and the magnetization intensity of the second permanent magnet array 4 are both greater than or equal to 0.5T and less than or equal to 1.2T.

[0060] Specifically, if the magnetization intensity of the first permanent magnet array 3 and the magnetization intensity of the second permanent magnet array 4 are both less than 0.5T, the modulus of the magnetic field intensity generated by the first permanent magnet array 3 and the second permanent magnet array 4 in the accommodating cavity 6 is small, and more ions cannot be confined. If the magnetization intensity of the first permanent magnet array 3 and the magnetization intensity of the second permanent magnet array 4 are both greater than 1.2T, the magnetic field force on the ions is greater than the electric field force, and the ions cannot be emitted from the emission hole 5 under the action of the electric field force. Therefore, the magnetization intensity of the first permanent magnet array 3 and the magnetization intensity of the second permanent magnet array 4 are both greater than or equal to 0.5T and less than or equal to 1.2T, which can not only better confine the ions, but also enable the ions to be emitted from the emission hole 5 under the action of the electric field.

[0061] In the embodiment of the present invention, by setting the magnetization intensity of the first permanent magnet array 3 and the second permanent magnet array 4 to be greater than or equal to 0.5T and less than or equal to 1.2T, the ions can be better confined, the collision between the ions and the cathode plate 1 is avoided, and the etching of the cathode plate 1 is reduced.

[0062] See also Figure 3 and Figure 4Optionally, on the basis of the above embodiment, the magnetically confined DC glow discharge plasma device further includes: a power supply 8, the power supply 8 is located outside the accommodating cavity 6, the negative pole of the power supply 8 is electrically connected to the cathode plate 1; the positive pole of the power supply 8 is electrically connected to the anode rod 2; the power supply 8 is used to apply a voltage to the anode rod 2; wherein the voltage applied by the power supply 8 to the anode rod 2 is greater than or equal to 300V and less than or equal to 3000V.

[0063] In the embodiment of the present invention, the ionization of the gas molecules in the accommodating chamber 6 is achieved by applying a voltage to the anode rod 2 through the power supply 8, and the electric field generated by applying a voltage to the anode rod 2 can provide energy for the emission of ions.

[0064] See also Figure 3 Optionally, on the basis of the above embodiment, at least two through holes 7 are provided on the fifth cathode plate 14 and the sixth cathode plate 15; the through holes of the fifth cathode plate 14 are provided in one-to-one correspondence with the through holes 7 of the sixth cathode plate 15; the diameter of the through holes 7 is greater than the diameter of the anode rod 2; the anode rod 2 passes through the through holes 7; wherein the diameter range of the anode rod 2 is greater than or equal to 1 mm and less than or equal to 20 mm.

[0065] Specifically, the anode rod 2 passes through the through hole 7 and does not contact the fifth cathode plate 14 and the sixth cathode plate 15 . This arrangement prevents the anode rod 2 from short-circuiting with the fifth cathode plate 14 and the sixth cathode plate 15 .

[0066] An embodiment of the present invention further provides a bonding device, including the magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention.

[0067] In an embodiment of the present invention, the bonding equipment includes a magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention, which reduces the generation of carbon atom particles and reduces the pollution to the surface of the wafer. It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps recorded in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit it here.

[0068] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A magnetically confined DC plasma glow discharge device, characterized in that: include: a cathode plate, at least two anode rods, a first permanent magnet array and a second permanent magnet array; The area surrounded by the cathode plate is a receiving cavity, the at least two anode rods are located in the receiving cavity, and the at least two anode rods are arranged along a first direction; the at least two anode rods and the cathode plate are used to generate a bias electric field under an external voltage; the cathode plate includes a first cathode plate, a second cathode plate and a third cathode plate; the first cathode plate has an emission hole; the second cathode plate and the third cathode plate are arranged opposite to each other along a second direction; the second cathode plate and the third cathode plate are both perpendicular to the first cathode plate; wherein the anode rod extends along a third direction, the first direction is perpendicular to the first cathode plate, and the third direction, the second direction and the first direction are all perpendicular to each other; The first permanent magnet array and the second permanent magnet array are located outside the accommodating cavity, and the first permanent magnet array and the second permanent magnet array are located on both sides of the cathode plate along the second direction; the first permanent magnet array and the second permanent magnet array are used to confine ions in the accommodating cavity to the area between the two anode rods and the second cathode plate and between the two anode rods and the third cathode plate; The glow discharge device does not include a yoke for introducing a magnetic field into the accommodating cavity; the first permanent magnet array includes a first permanent magnet, a second permanent magnet and a third permanent magnet; the second permanent magnet array includes a fourth permanent magnet, a fifth permanent magnet and a sixth permanent magnet; The first permanent magnet, the second permanent magnet and the third permanent magnet are arranged in sequence along the third direction; the fourth permanent magnet, the fifth permanent magnet and the sixth permanent magnet are arranged in sequence along the third direction; The magnetization intensity direction of the first permanent magnet is opposite to that of the third permanent magnet, the magnetization intensity direction of the second permanent magnet is perpendicular to that of the first permanent magnet; the magnetization intensity direction of the second permanent magnet is parallel to the third direction; The magnetization intensity direction of the fourth permanent magnet is opposite to that of the sixth permanent magnet, and the magnetization intensity direction of the fifth permanent magnet is perpendicular to that of the fourth permanent magnet; the magnetization intensity direction of the first permanent magnet is the same as that of the fourth permanent magnet; the magnetization intensity direction of the third permanent magnet is the same as that of the sixth permanent magnet; and the magnetization intensity direction of the second permanent magnet is opposite to that of the fifth permanent magnet.

2. The magnetically confined DC plasma glow discharge device according to claim 1, characterized in that: The cathode plate further comprises a fourth cathode plate, a fifth cathode plate and a sixth cathode plate; the area surrounded by the first cathode plate, the second cathode plate, the third cathode plate, the fourth cathode plate, the fifth cathode plate and the sixth cathode plate is the accommodation cavity; The fifth cathode plate and the sixth cathode plate are arranged opposite to each other along the third direction; the first cathode plate and the fourth cathode plate are arranged opposite to each other along the first direction; The first permanent magnet array is arranged adjacent to the second cathode plate, the second permanent magnet array is arranged adjacent to the third cathode plate, the second cathode plate and the third cathode plate are both parallel to the anode rod, and the first permanent magnet array and the second permanent magnet array are symmetrically arranged relative to the anode rod.

3. The magnetic confinement DC plasma glow discharge device according to claim 2, characterized in that At, The first permanent magnet array and the second cathode plate are spaced apart by a first preset size; the second permanent magnet array and the third cathode plate are spaced apart by a first preset size, wherein: The first preset size is greater than zero and smaller than a preset value.

4. The magnetically confined DC plasma glow discharge device according to claim 3, characterized in that: The first preset size is less than or equal to 30 mm.

5. The magnetically confined DC plasma glow discharge device according to claim 1, characterized in that: The region where the emitting hole is located is located between the second permanent magnet and the fifth permanent magnet, and the dimensions of the second permanent magnet and the fifth permanent magnet along the third direction are greater than or equal to the length of the region where the emitting hole is located on the first cathode plate along the third direction.

6. The magnetically confined DC plasma glow discharge device according to claim 1, characterized in that: The magnetization intensity of the first permanent magnet array and the magnetization intensity of the second permanent magnet array are both greater than or equal to 0.5T and less than or equal to 1.2T.

7. The magnetically confined DC plasma glow discharge device according to claim 1, characterized in that: Also includes: A power supply, the power supply is located outside the accommodating cavity, the negative electrode of the power supply is electrically connected to the cathode plate; the positive electrode of the power supply is electrically connected to the anode rod; the power supply is used to apply voltage to the anode rod; Wherein, the voltage applied by the power supply to the anode rod is greater than or equal to 300V and less than or equal to 3000V.

8. The magnetically confined DC plasma glow discharge device according to claim 2, characterized in that: At least two through holes are provided on the fifth cathode plate and the sixth cathode plate; The through holes of the fifth cathode plate are arranged in one-to-one correspondence with the through holes of the sixth cathode plate; the diameter of the through holes is greater than the diameter of the anode rod; the anode rod passes through the through holes; Wherein, the diameter of the anode rod is greater than or equal to 1 mm and less than or equal to 20 mm.

9. A bonding device, characterized in that: It comprises the magnetically confined DC plasma glow discharge device as described in any one of claims 1-8.

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