A method and system for controlling wafer ion implantation based on graphics

Abstract

The present application relates to the field of semiconductor ion implantation control technology, specifically to a wafer ion implantation control method and system based on graphics; in order to solve the problems of complex process, high cost and poor flexibility in the existing wafer ion implantation process, the present application first draws a graphic according to ion dose implantation information and wafer size to generate an ion dose implantation graphic; then, one-dimensional signal data is extracted from the ion dose implantation graphic to obtain an ion implantation path signal; finally, according to the ion implantation path signal, when the wafer is controlled to move vertically, the ion beam is horizontally scanned at a fixed height to cover the ions on the wafer, and the ion implantation dose is accurately controlled to ensure the uniformity of the ion implantation; the method is used in the field of chip manufacturing, with low cost, strong operability and good flexibility, and can improve production efficiency on the basis of improving the yield rate of the chip.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor ion implantation control, and in particular to a graphics-based wafer ion implantation control method and system. Background Art

[0002] In semiconductor integrated circuit manufacturing technology, ion implantation control is a key device in the pre-manufacturing process of integrated circuits. By controlling ion implantation, ion doping can be performed on the surface and the area below the semiconductor wafer or other workpiece. This step is crucial to changing the carrier concentration and conductivity type of the semiconductor, thereby making the wafer suitable for the manufacture of various devices. Compared with traditional thermal diffusion doping control technology, ion implantation control technology can achieve fine control of parameters such as implantation dose, implantation angle and implantation depth, overcoming the limitations of traditional processes.

[0003] However, if it is necessary to control the ion implantation of a specific pattern on the wafer or to achieve differentiated doping of different areas, existing methods often need to rely on specific physical masks to define the implantation areas. The pattern on the mask determines which areas of the wafer can accept ion implantation and which areas are protected from ion implantation. However, this control method is not only complex in process, has high operating requirements and low efficiency, but the pattern selection is limited by the design of the mask, resulting in high production costs, long production cycles and poor flexibility. Summary of the invention

[0004] The object of the present invention is to provide a wafer ion implantation control method and system based on graphics.

[0005] The technical solution of the present invention is as follows:

[0006] A wafer ion implantation control method based on graphics includes the following operations:

[0007] S1. Draw a graph based on the ion dose implantation information and the wafer size to obtain an ion dose implantation graph; in the ion dose implantation graph, the horizontal and vertical axis coordinates are used to locate the wafer position, and the vertical axis coordinate is used to limit the ion dose;

[0008] S2. Determine the starting point and end point of ion injection according to the ion dose distribution in the ion dose injection graph; determine the cutting direction based on the direction of the line connecting the starting point and end point of ion injection; divide the ion dose injection graph into several injection area graphs according to the cutting direction and the ion beam scanning area, and obtain the cross-sectional ion dose change graphs of several injection area graphs respectively; convert the several cross-sectional ion dose change graphs into one-dimensional signal data respectively, and then splice them to obtain the ion injection path signal;

[0009] S3. According to the ion implantation path signal, when the wafer mechanical motion device controls the wafer to move vertically, the electric scanning ion implantation device horizontally scans the wafer with the ion beam at a fixed height to cover the ions on the wafer, thereby realizing ion implantation on the wafer.

[0010] The operations for determining the starting point and end point of ion injection in S2 are specifically as follows: projecting the ion dose injection graph onto a horizontal plane to obtain a horizontal projection distribution map of ion dose; after dividing the horizontal projection distribution map of ion dose into a grid, performing multi-level connected domain analysis processing on the grid according to the ion dose distribution, and obtaining an ion dose connected map after the number of connected regions does not exceed a first value; taking the connected region corresponding to the maximum area in the ion dose connected map as the target region; taking the position point in the target region in the horizontal projection distribution map of ion dose where the ion dose is the minimum value and is not at the edge of the ion dose change as the starting point of ion injection; in the horizontal projection distribution map of ion dose, the position point farthest from the starting point of ion injection is the end point of ion injection.

[0011] The specific operation of determining the cutting direction in S2 is as follows: obtain all straight lines passing through the starting point of ion injection except the line connecting the starting point and the end point of ion injection; traverse the ion dose horizontal projection distribution diagram for each straight line along the direction of the line connecting the starting point and the end point of ion injection with a fixed step size, summarize the number of ion dose crossings during the traversal of each straight line, and obtain the total number of ion dose crossings for each straight line; take the direction of the straight line corresponding to the minimum total number of ion dose crossings as the cutting direction.

[0012] The specific operation of S2 converting the current profile ion dose change diagram into one-dimensional signal data is as follows: extracting the wafer position data and ion dose injection data in the current profile ion dose change diagram; splicing each wafer position data with the corresponding ion dose injection data to obtain several wafer ion dose data; splicing all wafer ion dose data according to the adjacent position relationship in the wafer to obtain the current one-dimensional signal data.

[0013] During the ion implantation process, when the center position of the ion beam used for horizontal scanning of the wafer is not within the scanning center range, the wafer movement is stopped; the corresponding position point on the wafer of the first point to be scanned in the remaining ion implantation path signal is used as the position point to be moved; after the position point to be moved is moved to align with the center position of the ion beam, the remaining ion implantation path signal is updated based on the position difference between the position point to be moved and the position point on the wafer aligned with the center position of the ion beam to obtain the remaining updated ion implantation path signal; according to the remaining updated ion implantation path signal, the wafer continues to move in the vertical direction and continues to perform horizontal scanning of the ion beam.

[0014] During the ion implantation process, the ion implantation dose is controlled by adjusting the horizontal scanning speed of the ion beam in the electric scanning ion implantation device.

[0015] In S3, the wafer is controlled to move vertically by vertically mounting the wafer on a moving target plate in a wafer mechanical motion device, and the target plate drives the wafer to move vertically.

[0016] During the ion implantation process, the coordinates of the upper boundary position of the wafer movement are (0, R+r), and the coordinates of the lower boundary position are (0, -Rr), where R is the wafer radius and r is the ion beam radius.

[0017] A wafer ion implantation control system based on graphics is used to implement the above-mentioned wafer ion implantation control method based on graphics, comprising:

[0018] The wafer mechanical movement device is used to move the wafer vertically in the vertical direction after receiving the vertical movement path signal of the wafer from the master control device;

[0019] The electric scanning ion implantation device is used to receive the horizontal movement path signal of the ion beam during continuous ion implantation from the master control device, so as to realize horizontal scanning of the ion beam on the wafer to cover the ions on the wafer;

[0020] A master control device, used for receiving a vertical motion path signal of the wafer from the computing device and a horizontal motion path signal of the ion beam, controlling the movement of the wafer mechanical motion device, and controlling the movement of the electric scanning ion implantation device;

[0021] A computing device is used to draw a graph based on ion dose implantation information and wafer size to obtain an ion dose implantation graph; and to determine the ion implantation start and end points based on the ion dose distribution in the ion dose implantation graph; determine the cutting direction based on the direction of the line connecting the ion implantation start and end points; divide the ion dose implantation graph into a plurality of implantation region graphs according to the cutting direction and the ion beam scanning area, and obtain cross-sectional ion dose variation graphs of the plurality of implantation region graphs respectively; convert the plurality of cross-sectional ion dose variation graphs into one-dimensional signal data respectively, and then splice them to obtain an ion implantation path signal; and divide the ion implantation path signal into a vertical direction motion path signal of the wafer and a horizontal direction motion path signal of the ion beam, and then transmit them to a master control device.

[0022] The beneficial effects of the present invention are:

[0023] The present invention provides a wafer ion implantation control method based on graphics. First, a graphics is drawn according to ion dose implantation information and wafer size to generate an ion dose implantation graphics that is compatible with the wafer size and ion dose implantation information, which can intuitively present the ion implantation area, dose distribution and the relationship with the wafer size in the wafer, so as to facilitate subsequent real-time adjustment; then, based on the ion dose distribution, the ion implantation starting point, end point and cutting direction are determined, and the ion dose implantation graphics are divided into a plurality of implantation area graphics to obtain a cross-sectional ion dose change graph, and then one-dimensional signal data is extracted for splicing to obtain an ion implantation path signal that can provide an accurate ion implantation reference and facilitate automatic implantation control; finally, according to the ion implantation path signal, when the wafer is controlled to move vertically, the ion beam is horizontally scanned at a fixed height to cover the ions on the wafer, so as to ensure the uniformity of the ion implantation; the method is used in the field of chip manufacturing, has low cost, strong operability and good flexibility, and can improve production efficiency on the basis of improving the yield rate of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] By reading the detailed description of the preferred embodiment below, the scheme and advantages of the present application will become clear to those skilled in the art. The accompanying drawings are only for the purpose of illustrating the preferred embodiment and are not to be considered as limiting the present invention.

[0025] In the attached picture:

[0026] Figure 1 It is a flowchart of the injection control method in the embodiment;

[0027] Figure 2 A schematic diagram of an ion dose implantation pattern in an embodiment;

[0028] Figure 3 It is a schematic diagram of a cross-sectional view in an embodiment. DETAILED DESCRIPTION

[0029] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0030] First, this embodiment provides a pattern-based wafer ion implantation system, which is used to implement the following pattern-based wafer ion implantation control method, including:

[0031] The wafer mechanical motion device is used to move the wafer vertically in the vertical direction after receiving the vertical motion path signal of the wafer from the master control device; in the wafer mechanical motion device, the wafer is vertically mounted on the moving target plate, and the wafer is driven to move by the target plate;

[0032] The electric scanning ion implanter is used to realize horizontal scanning of the wafer by the ion beam to cover the ions on the wafer after receiving the horizontal movement path signal of the ion beam during continuous ion implantation from the master control device; the electric scanning ion implanter is composed of a group of deflection electrodes, which apply different voltages to control the deflection angle and direction of the ion beam. By accurately controlling these voltages, the ion beam can be accurately positioned and implanted on the wafer surface;

[0033] A master control device, used for receiving the ion implantation path signal from the computing device and converting it into a vertical motion path signal of the wafer and a horizontal motion path signal of the ion beam, controlling the movement of the wafer mechanical motion device, and controlling the movement of the electric scanning ion implantation device;

[0034] A computing device is used to draw a graph based on ion dose implantation information and wafer size to obtain an ion dose implantation graph; and to determine the ion implantation start and end points based on the ion dose distribution in the ion dose implantation graph; determine the cutting direction based on the direction of the line connecting the ion implantation start and end points; divide the ion dose implantation graph into a plurality of implantation region graphs according to the cutting direction and the ion beam scanning area, and obtain cross-sectional ion dose variation graphs of the plurality of implantation region graphs respectively; convert the plurality of cross-sectional ion dose variation graphs into one-dimensional signal data respectively, and then splice them to obtain an ion implantation path signal; and divide the ion implantation path signal into a vertical direction motion path signal of the wafer and a horizontal direction motion path signal of the ion beam, and then transmit them to a master control device.

[0035] This embodiment also provides a method for controlling wafer ion implantation based on graphics, see Figure 1 , including the following operations:

[0036] S1. Draw a graph based on the ion dose implantation information and the wafer size to obtain an ion dose implantation graph; in the ion dose implantation graph, the horizontal and vertical axis coordinates are used to locate the wafer position, and the vertical axis coordinate is used to limit the ion dose;

[0037] S2. Determine the starting point and end point of ion injection according to the ion dose distribution in the ion dose injection graph; determine the cutting direction based on the direction of the line connecting the starting point and end point of ion injection; divide the ion dose injection graph into several injection area graphs according to the cutting direction and the ion beam scanning area, and obtain the cross-sectional ion dose change graphs of several injection area graphs respectively; convert the several cross-sectional ion dose change graphs into one-dimensional signal data respectively, and then splice them to obtain the ion injection path signal;

[0038] S3. According to the ion implantation path signal, when the wafer mechanical motion device controls the wafer to move vertically, the electric scanning ion implantation device horizontally scans the wafer with the ion beam at a fixed height to cover the ions on the wafer, thereby realizing ion implantation on the wafer.

[0039] S1. Draw a graph based on ion dose implantation information and wafer size to obtain an ion dose implantation graph.

[0040] Based on the ion dose implantation information (implantation position and dose) and wafer size, calculations, analysis and graphics are performed to generate ion dose implantation graphics that are compatible with the wafer size and ion dose implantation information. This can intuitively present the ion implantation area, dose distribution and relationship with the wafer size in the wafer, and can be used as the data basis for subsequent wafer ion implantation, facilitating real-time adjustments, ensuring the accuracy and consistency of the implantation, and reducing errors and waste.

[0041] Among them, in the ion dose implantation graph, the horizontal and vertical axis coordinates are used to locate the wafer position, and the vertical axis coordinate is used to limit the ion dose.

[0042] In order to facilitate those skilled in the art to understand the ion dose implantation diagram, an ion dose implantation diagram example is given, see Figure 2 . Figure 2 The coordinate axes x and y represent the horizontal and vertical coordinates of a certain point, respectively, and the vertical axis z represents the ion dose. Figure 2 The ion dose implantation diagram shown includes three different doses, with the highest dose in the center area and the dose gradually decreasing as it spreads outward.

[0043] S2. Determine the starting and ending points of the ion injection according to the ion dose distribution in the ion dose injection diagram; determine the cutting direction based on the direction of the line connecting the starting and ending points of the ion injection; divide the ion dose injection diagram into several injection area diagrams according to the cutting direction and the ion beam scanning area, and obtain the cross-sectional ion dose change diagrams of several injection area diagrams respectively; convert the several cross-sectional ion dose change diagrams into one-dimensional signal data respectively, and then splice them to obtain the ion injection path signal.

[0044] Based on the ion dose implantation pattern, the starting point, end point and cutting direction of ion implantation are determined, and after the three-dimensional ion dose implantation pattern is divided into several implantation area patterns, the cross-sectional ion dose variation pattern is obtained and the one-dimensional signal data is extracted and spliced ​​to obtain the ion implantation path signal, which is used to provide accurate ion implantation reference, realize automatic implantation control, and facilitate data analysis and fault diagnosis, thereby improving the accuracy and efficiency of ion implantation and ensuring the quality and performance of the wafer.

[0045] First, according to the ion dose distribution in the ion dose injection graph, the starting point and end point of ion injection are determined. Specifically, the ion dose injection graph is projected onto a horizontal plane (a plane composed of horizontal and vertical axis coordinates) to obtain an ion dose horizontal projection distribution graph that is convenient for plane analysis of ion dose distribution; after the ion dose horizontal projection distribution graph is grid-divided, the grid is subjected to multi-level connected domain analysis processing according to the ion dose distribution, and regions with similar ion doses are connected to form an area, and when the number of connected regions does not exceed a first value, an ion dose connected graph is obtained; in the ion dose connected graph, the connected region corresponding to the maximum area value, that is, the region with a smaller ion dose change gradient, is used as the target region; the position point in the target region in the ion dose horizontal projection distribution graph where the ion dose is the minimum value and is not at the edge of the ion dose change is used as the ion injection starting point; in the ion dose horizontal projection distribution graph, the position point farthest from the ion injection starting point is used as the end point of ion injection.

[0046] The operation of the multi-level connected domain analysis and processing is as follows: in the process of traversing each grid at the current level, the grids within the eight neighborhoods of the current grid whose ion dose mean difference with the current grid is less than the ion dose difference threshold of the current level are connected to the current grid to form the current connected area of ​​the current level; at the current level, after all grids are connected, the current level ion dose connectivity map is obtained, which is used to perform the next level of connected domain analysis and processing; after performing the last level of connected domain analysis and processing, the ion dose connectivity map is obtained. In the multi-level connected domain analysis and processing, the traversed ion dose difference is gradually reduced.

[0047] Then, the cutting direction is determined based on the direction of the line connecting the start and end points of the ion implantation. Specifically, all straight lines passing through the start point of the ion implantation except the line connecting the start and end points of the ion implantation are obtained; each straight line traverses the ion dose horizontal projection distribution diagram along the direction of the line connecting the start and end points of the ion implantation with a fixed step length, and the number of ion dose crossings during the traversal of each straight line is summarized to obtain the total number of ion dose crossings for each straight line; the direction of the straight line corresponding to the minimum total number of ion dose crossings is used as the cutting direction, so that when the wafer is subsequently scanned to implant ions, the dose control frequency of the ion beam is smaller, thereby reducing the error.

[0048] Next, the ion dose implantation pattern is divided into several implantation region patterns according to the cutting direction and the ion beam scanning area, and the cross-sectional ion dose variation patterns of the several implantation region patterns are obtained respectively (see Figure 3 , Figure 3 The x-axis is the horizontal axis and the z-axis represents the ion dose), which is used to observe the distribution of ion dose implantation information.

[0049] Finally, several cross-sectional ion dose variation diagrams are converted into one-dimensional signal data and then spliced ​​to obtain ion injection path signals, which are used to intuitively reflect the dose distribution of ions at different positions on the wafer, thereby providing an accurate reference for precise control of the ion injection process.

[0050] Among them, taking the current profile ion dose change diagram as an example, the operation of converting the current profile ion dose change diagram into one-dimensional signal data is specifically as follows: extracting the wafer position data and ion dose injection data in the current profile ion dose change diagram, and splicing each wafer position data with the corresponding ion dose injection data to obtain several wafer ion dose data; splicing all wafer ion dose data according to the adjacent position relationship in the wafer to obtain the current one-dimensional signal data, which is used for subsequent splicing with other one-dimensional signal data to form an ion injection path signal.

[0051] In addition, when splicing the one-dimensional signal data, the arc corresponding to the position point of the last wafer ion dose data in the previous one-dimensional signal data and the position point of the first wafer ion dose data in the current one-dimensional signal data on the wafer is the dominant arc, so that when ion injection is performed subsequently according to the ion injection path signal, the paths are parallel to achieve uniform injection of the entire wafer.

[0052] Preferably, when splicing the one-dimensional signal data, the position point of the last wafer ion dose data in the previous one-dimensional signal data is the same as the position point of the first wafer ion dose data in the current one-dimensional signal data, or the distance from the position point of the first wafer ion dose data in the current one-dimensional signal data is less than a threshold, so that when ion injection is subsequently performed according to the ion injection path signal, the path is W-shaped, thereby achieving sufficiently uniform injection of the entire wafer.

[0053] S3. According to the ion implantation path signal, when the wafer mechanical motion device controls the wafer to move vertically, the electric scanning ion implantation device horizontally scans the wafer with the ion beam at a fixed height to cover the ions on the wafer, thereby realizing ion implantation on the wafer.

[0054] After splitting the ion injection path signal into the vertical movement path signal of the wafer and the horizontal movement path signal of the ion beam, the wafer mechanical movement device controls the vertical movement of the wafer according to the vertical movement path signal of the wafer. The electric scanning ion injection device will scan the wafer horizontally at a fixed height according to the horizontal movement path signal of the ion beam to evenly cover the ions to various areas on the wafer, thereby ensuring the uniformity of the injection and improving the ion injection efficiency while improving the chip yield.

[0055] Among them, the wafer is controlled to move vertically in the vertical direction by vertically mounting the wafer on the moving target plate in the wafer mechanical motion device, and the target plate drives the wafer to move vertically, so that a smaller ion beam can cover the entire surface of the wafer. The position coordinates of the upper boundary Yt1 of the wafer movement are (0, R+r), and the position coordinates of the lower boundary Yt2 are (0, -Rr), R is the wafer radius, and r is the ion beam radius.

[0056] The ions are covered on the wafer by horizontally scanning the wafer with an ion beam at a fixed height. The electric scanning ion implanter is placed at a fixed height. The ion beam in the electric scanning ion implanter is facing the vertical surface of the wafer. When the ion beam moves in the horizontal direction, it will evenly cover the surface of the wafer. The electric scanning ion implanter consists of a group of deflection electrodes. These electrodes apply different voltages to control the deflection angle and direction of the ion beam. By precisely controlling these voltages, the ion beam can be accurately positioned and implanted on the wafer surface, thereby achieving uniformity in the horizontal scanning of the ion beam. At the same time, during the ion implantation process, the ion implantation dose is controlled by adjusting the speed of the horizontal scanning of the ion beam in the electric scanning ion implanter.

[0057] In addition, during the ion implantation process, if the center position of the ion beam used for horizontal scanning of the wafer is not within the scanning center range, that is, the horizontal scanning center height of the ion beam exceeds Yt1, or is less than Yt2, the wafer movement is stopped; the corresponding position point on the wafer of the first point to be scanned in the remaining ion implantation path signal is used as the position point to be moved; after the position point to be moved is moved to align with the center position of the ion beam, the remaining ion implantation path signal is updated based on the position difference between the position point to be moved and the position point on the wafer aligned with the center position of the ion beam to obtain the remaining updated ion implantation path signal; according to the remaining updated ion implantation path signal, the wafer continues to move in the vertical direction and continues to perform horizontal scanning of the ion beam.

[0058] The present embodiment provides a method for controlling wafer ion implantation based on graphics. First, a graphics is drawn according to ion dose implantation information and wafer size to generate an ion dose implantation graphics that is compatible with the wafer size and ion dose implantation information, which can intuitively present the ion implantation area, dose distribution and relationship with the wafer size in the wafer, so as to facilitate subsequent real-time adjustment. Then, based on the ion dose distribution, the ion implantation starting point, end point and cutting direction are determined, and the ion dose implantation graphics are divided into a number of implantation area graphics to obtain a cross-sectional ion dose variation graph, and then one-dimensional signal data is extracted for splicing to obtain an ion implantation path signal that can provide an accurate ion implantation reference and facilitate automatic implantation control. Finally, according to the ion implantation path signal, when the wafer is controlled to move vertically, the ion beam is horizontally scanned at a fixed height to cover the ions on the wafer, so as to ensure the uniformity of ion implantation. This method is used in the field of chip manufacturing, has low cost, strong operability and good flexibility, and can improve production efficiency on the basis of improving the yield rate of chips.

Claims

1. A wafer ion implantation control method based on graphics, characterized in that: The following operations are included: S1. Draw a graph based on the ion dose implantation information and the wafer size to obtain an ion dose implantation graph; in the ion dose implantation graph, the horizontal and vertical axis coordinates are used to locate the wafer position, and the vertical axis coordinate is used to limit the ion dose; S2. Determine the starting point and end point of ion implantation according to the ion dose distribution in the ion dose implantation graph; Specifically, the ion dose injection pattern is projected onto a horizontal plane to obtain an ion dose horizontal projection distribution map; after the ion dose horizontal projection distribution map is grid-divided, a multi-level connected domain analysis process is performed on the grid according to the ion dose distribution, and an ion dose connected map is obtained after the number of connected regions does not exceed a first value; The connected area corresponding to the maximum area in the ion dose connected map is taken as the target area; The point where the ion dose of the target area in the ion dose level projection distribution diagram is the minimum and is not at the edge of the ion dose change is used as the starting point of ion implantation; In the ion dose level projection distribution diagram, the point farthest from the ion implantation starting point is the end point of the ion implantation; Based on the direction of the line connecting the starting point and the end point of the ion injection, the cutting direction is determined; specifically, all straight lines passing through the starting point of the ion injection except the line connecting the starting point and the end point of the ion injection are obtained; each straight line traverses the ion dose horizontal projection distribution diagram along the direction of the line connecting the starting point and the end point of the ion injection with a fixed step length, and the number of ion dose crossings during the traversal of each straight line is summarized to obtain the total number of ion dose crossings for each straight line; the direction of the straight line corresponding to the minimum total number of ion dose crossings is taken as the cutting direction; According to the cutting direction and the ion beam scanning area, the ion dose implantation pattern is divided into a plurality of implantation region patterns, and cross-sectional ion dose variation patterns of the plurality of implantation region patterns are obtained respectively; After converting several profile ion dose variation diagrams into one-dimensional signal data respectively, splicing them to obtain ion implantation path signals; the operation of converting the current profile ion dose variation diagram into one-dimensional signal data is specifically as follows: extracting wafer position data and ion dose implantation data in the current profile ion dose variation diagram; splicing each wafer position data with the corresponding ion dose implantation data to obtain several wafer ion dose data; splicing all wafer ion dose data according to the adjacent position relationship in the wafer to obtain the current one-dimensional signal data; S3. According to the ion implantation path signal, when the wafer mechanical motion device controls the wafer to move vertically, the electric scanning ion implantation device horizontally scans the wafer with the ion beam at a fixed height to cover the ions on the wafer, thereby realizing ion implantation on the wafer.

2. The method for controlling wafer ion implantation based on graphics according to claim 1, characterized in that: During the ion implantation process, when the center position of the ion beam used for horizontal scanning of the wafer is not within the scanning center range, the wafer movement is stopped; the corresponding position point on the wafer of the first point to be scanned in the remaining ion implantation path signal is used as the position point to be moved; After the position point to be moved is moved to be aligned with the center position of the ion beam, the remaining ion injection path signal is updated based on the position difference between the position point to be moved and the position point on the wafer after being aligned with the center position of the ion beam, to obtain a remaining updated ion injection path signal; according to the remaining updated ion injection path signal, the wafer continues to move in the vertical direction and continues to perform horizontal scanning of the ion beam.

3. The method for controlling wafer ion implantation based on graphics according to claim 2, characterized in that: During the ion implantation process, the ion implantation dose is controlled by adjusting the horizontal scanning speed of the ion beam in the electric scanning ion implantation device.

4. The method for controlling wafer ion implantation based on graphics according to claim 3, characterized in that: In S3, the wafer is controlled to move vertically by vertically mounting the wafer on a moving target plate in a wafer mechanical motion device, and the target plate drives the wafer to move vertically.

5. The method for controlling wafer ion implantation based on graphics according to claim 4, characterized in that: During the ion implantation process, the coordinates of the upper boundary position of the wafer movement are (0, R+r), and the coordinates of the lower boundary position are (0, -Rr), where R is the wafer radius and r is the ion beam radius.

6. A graphics-based wafer ion implantation control system, used to implement the graphics-based wafer ion implantation control method according to claim 1, characterized in that: include: The wafer mechanical movement device is used to move the wafer vertically in the vertical direction after receiving the vertical movement path signal of the wafer from the master control device; The electric scanning ion implantation device is used to receive the horizontal movement path signal of the ion beam during continuous ion implantation from the master control device, so as to realize horizontal scanning of the ion beam on the wafer to cover the ions on the wafer; A master control device, used for receiving a vertical motion path signal of the wafer from the computing device and a horizontal motion path signal of the ion beam, controlling the movement of the wafer mechanical motion device, and controlling the movement of the electric scanning ion implantation device; A calculation device, used for drawing a graph based on ion dose implantation information and wafer size to obtain an ion dose implantation graph; and for determining the ion implantation start point and end point according to the ion dose distribution in the ion dose implantation pattern; The cutting direction is determined based on the direction of the line connecting the starting point and the end point of the ion implantation; the ion dose implantation graph is divided into a number of implantation area graphs according to the cutting direction and the ion beam scanning area, and the cross-sectional ion dose change graphs of the several implantation area graphs are obtained respectively; the several cross-sectional ion dose change graphs are respectively converted into one-dimensional signal data, and then spliced ​​to obtain the ion implantation path signal; the ion implantation path signal is split into the vertical direction movement path signal of the wafer and the horizontal direction movement path signal of the ion beam, and then transmitted to the master control device.

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