Divider plate, diverter assembly, diverter device and electronic equipment

Abstract

The present application relates to a diverter plate, a diverter assembly, a diverter device and an electronic device. The diverter plate includes an inlet, N outlets and a first flow channel to an Nth flow channel, the inlet is located on one side of the diverter plate, the N outlets are located on the other side of the diverter plate, one end of the first flow channel to the Nth flow channel is connected to the inlet, and the other end of the first flow channel to the Nth flow channel is connected to the N outlets one by one, and the length of each flow channel from the first flow channel to the Nth flow channel is the same, and N is an integer greater than or equal to 2. The embodiment of the present application is conducive to improving the uniformity of the outlet pressure of the diverter plate and the uniformity of the gas distribution by setting the length of each flow channel from the first flow channel to the Nth flow channel to be the same, which is conducive to avoiding product defects, improving product yield, and reducing production costs.

Description

Technical Field

[0001] The present application relates to the field of flow diversion technology, and in particular to a flow diversion plate, a flow diversion component, a flow diversion device and an electronic device. Background Art

[0002] Rapid thermal processing equipment can grow thin films on the substrate surface of wafers or perform annealing on wafers. In existing rapid thermal processing equipment, the gas flow field is uneven. When the process gas applied to the wafer is unevenly distributed, it will cause problems such as uneven film growth or uneven annealing, thereby causing product defects, reducing product yield, and increasing production costs. Summary of the invention

[0003] The embodiments of the present application provide a shunt plate, a shunt assembly, a shunt device and an electronic device. The present application is conducive to avoiding product defects, improving product yield and reducing production costs through the structural design of the shunt plate.

[0004] In the first aspect, an embodiment of the present application provides a diverter plate. The diverter plate includes an inlet, N outlets, and a first flow channel to an Nth flow channel, wherein the inlet is located on one side of the diverter plate, and the N outlets are located on the other side of the diverter plate. One end of each of the first flow channel to the Nth flow channel is connected to the inlet, and the other end of each of the first flow channel to the Nth flow channel is connected to the N outlets one by one. The length of each flow channel from the first flow channel to the Nth flow channel is the same, and N is an integer greater than or equal to 2. The length of the first flow channel refers to the length of the flow path of the gas in the first flow channel. The length of other flow channels refers to the length of the flow path of the gas in the corresponding flow channel.

[0005] The embodiment of the present application sets the lengths of the flow channels from the first flow channel to the Nth flow channel to be the same, which is beneficial to improving the uniformity of the outlet pressure and the uniformity of the gas distribution of the gas diverted by the diverter plate, so that the process gas applied to the wafer is evenly distributed, especially the gas distribution in the middle area and the edge area of ​​the wafer is uniform, which is beneficial to the uniform growth or annealing of the film, thereby avoiding product defects, improving product yield, and reducing production costs. In a possible implementation, the cross-section of at least one flow channel from the first flow channel to the Nth flow channel is circular. The embodiment of the present application sets the cross-section of at least one flow channel from the first flow channel to the Nth flow channel to be circular, which is beneficial to reducing the pressure loss during the gas flow process.

[0006] In a possible implementation, the diameter of the cross section of the flow channel with a circular cross section is greater than or equal to 1 mm and less than or equal to 3 mm. By setting the diameter of the cross section of the flow channel with a circular cross section to be less than or equal to 3 mm, the number of flow channels on the manifold can be set to be larger, which is beneficial to the uniformity of the intake. By setting the diameter of the cross section of the flow channel with a circular cross section to be greater than or equal to 1 mm, it is beneficial to reduce the pressure loss of the gas.

[0007] In a possible implementation, the cross section of at least one of the first flow channel to the Nth flow channel is elliptical. The embodiment of the present application is conducive to reducing pressure loss during gas flow by setting the cross section of at least one of the first flow channel to the Nth flow channel to be elliptical.

[0008] In a possible implementation, the ratio of the major axis to the minor axis of the cross section of the flow channel with an elliptical cross section is greater than 1 and less than or equal to 2. By setting the ratio of the major axis to the minor axis of the cross section of the flow channel with an elliptical cross section to be greater than 1 and less than or equal to 2, flattening of the flow channel can be avoided, which is conducive to reducing the pressure loss of the gas.

[0009] In a possible implementation, the cross section of at least one of the first flow channel to the Nth flow channel is an M-gon, where M is an integer greater than or equal to 3 and less than or equal to 6. Exemplarily, M can be 3, and the cross section of the flow channel is a triangular shape, i.e., a triangle. Or M can be 4, and the cross section of the flow channel is a quadrilateral, such as a rectangle, a square, a parallelogram, or a rhombus. The more sides the cross section of the flow channel has, the closer it is to a circle, and the smaller the pressure loss. By setting cross sections with different numbers of sides, the intake distribution and pressure can be adjusted as needed.

[0010] In a possible implementation, the first flow channel includes at least two flow segments arranged along a first direction, the angle between the extension direction of the flow segment of the first flow channel closest to the outlet and the first direction is greater than or equal to 0° and less than or equal to 60°, and the first direction is perpendicular to the surface of the outlet of the manifold. It can be understood that the flow segment of the first flow channel closest to the outlet is tilted. According to the difference in the angle between the extension direction of the flow segment of the first flow channel closest to the outlet and the first direction, the direction of gas discharge can be controlled, and the air intake angle can be precisely adjusted, which is conducive to improving the yield of wafer manufacturing.

[0011] In a possible implementation, the size of the first flow channel in the first direction is greater than or equal to 20 mm and less than or equal to 80 mm, and the first direction is perpendicular to the surface where the outlet of the diverter plate is located. By setting the size of the first flow channel in the first direction to be greater than or equal to 20 mm and less than or equal to 80 mm, it is helpful to reduce pressure loss and reasonably design the diversion of the flow channel. It can be understood that the sizes of other flow channels in the first direction can all be greater than or equal to 20 mm and less than or equal to 80 mm.

[0012] In a possible implementation, the first flow channel includes X flow segments arranged in sequence along the first direction, X is an integer greater than or equal to 2, the first flow segment is connected to the inlet, the Xth flow segment is connected to the outlet, and the cross-sectional area of ​​the first flow segment is twice the cross-sectional area of ​​the Yth flow segment. Y-1 times, Y is an integer greater than 1 and less than or equal to X, and the first direction is perpendicular to the surface of the outlet of the diverter plate. By setting the cross-sectional area of ​​the first flow segment to be 2 times the cross-sectional area of ​​the Yth flow segment Y-1 times, which helps to avoid the pressure drop when the gas in the first flow segment flows to the Yth flow segment.

[0013] In a possible implementation, the first flow channel includes a connecting section and a first flow section and a second flow section arranged in sequence along a first direction, the first flow section and the second flow section are arranged staggered in the second direction, the connecting section connects the first flow section and the second flow section, the connection between the first flow section and the connecting section is an arc and / or the connection between the second flow section and the connecting section is an arc, the first direction is perpendicular to the surface where the outlet of the diverter plate is located, and the second direction is perpendicular to the first direction. By setting the corners of the flow channel to be arc-shaped, it is helpful to reduce the pressure loss of the fluid passing through the flow channel.

[0014] In a possible implementation manner, the diameter of the arc is greater than or equal to 0.5 mm and less than or equal to 4 mm. The diameter of the arc is greater than or equal to 0.5 mm, which is conducive to reducing pressure loss and turbulence.

[0015] In the second aspect, the present application provides a diverter assembly, comprising the diverter plate described in any of the aforementioned embodiments, wherein the number of the diverter plates is at least two, at least two of the diverter plates are arranged in sequence, the arrangement direction of at least two of the diverter plates is set at an angle to the arrangement direction of the inlet and the outlet, and two adjacent diverter plates can be separated from each other.

[0016] The embodiment of the present application increases the flexibility of the diverter assembly structure by setting at least two diverter plates as a split structure. A combination of diverter plates with different flow channels can be selected to adjust the airflow field according to different process scenarios. Part of the diverter plate can be replaced as needed without replacing the entire diverter plate to adapt to different process requirements and reduce production costs.

[0017] It can be understood that by designing the diversion assembly into at least two split diversion plates, diversion plates with different apertures, angles, and cross-sectional shapes can be combined and embedded in the process chamber to adjust the flow field, thereby achieving non-uniform air intake to balance the uneven flow field in the process chamber.

[0018] In a possible implementation, at least two of the flow segments of the flow diverter plates in the flow diverter assembly that are closest to the outlet have different extension directions. In the embodiment of the present application, by setting at least two flow diverter plates with different extension directions of the flow segments closest to the outlet, a combination of flow diverter plates with different flow channels is used to adjust the airflow field, so as to adapt to different process requirements and improve the manufacturing yield of the product.

[0019] In a possible embodiment, the outlets of at least two of the diverter plates in the diverter assembly have different sizes. By setting the outlets of at least two diverter plates to have different sizes, a combination of diverter plates with different flow channels is used to adjust the airflow field to adapt to different process requirements and improve the manufacturing yield of the product.

[0020] In a possible implementation, the shapes of the outlets of at least two of the diverter plates in the diverter assembly are different. By setting the outlets of at least two diverter plates to be different in shape, a combination of diverter plates with different flow channels is used to adjust the airflow field to adapt to different process requirements and improve the manufacturing yield of the product.

[0021] In a third aspect, the present application provides a flow diversion device, including a flow diversion mechanism and a flow diversion assembly as described in any of the aforementioned embodiments, wherein the flow diversion mechanism includes a flow diverter and a plurality of flow diversion pipes, the number of the flow diverter pipes is the same as the number of the flow diverter plates, one end of the plurality of flow diverter pipes are connected to the flow diverter, the other ends of the plurality of flow diverter pipes are connected to at least two flow diverter plates one by one, and at least two flow diverter pipes are symmetrically arranged about the flow diverter. The flow diverter can adjust the pressure, flow rate, flow rate, etc. of the fluid entering different flow diverter pipes, realize the zoning adjustment of the fluid, realize the adjustment of the airflow field in the electronic device, and improve the product yield of the wafer.

[0022] In the embodiment of the present application, at least two diversion pipes are arranged symmetrically about the diverter, and at least the two diversion pipes have the same length, which is beneficial to improving the uniformity of the gas pressure diverted through the diverter, so that the pressure of the gas entering the diverter plate is symmetrically distributed.

[0023] In a fourth aspect, the present application provides an electronic device, comprising a process chamber and the diverter device described in any one of the aforementioned embodiments, wherein the diverter plate is located in the process chamber, and the diverter is located outside the process chamber.

[0024] In a fifth aspect, the present application provides an electronic device, comprising a process chamber and a shunt component as described in any one of the aforementioned embodiments, wherein the shunt component is located in the process chamber.

[0025] In a possible implementation, the electronic device is a rapid thermal processing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0027] Figure 1 It is a structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0028] Figure 2 It is a structural schematic diagram of a diverter plate provided in an embodiment of the present application;

[0029] Figure 3 yes Figure 2 A schematic structural diagram of the diverter plate from another angle;

[0030] Figure 4 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0031] Figure 5 yes Figure 4 A schematic structural diagram of the diverter plate from another angle;

[0032] Figure 6 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0033] Figure 7 yes Figure 6 A schematic structural diagram of the diverter plate from another angle;

[0034] Figure 8 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0035] Fig. 9 It is a structural schematic diagram of a diverter plate provided in an embodiment of the present application;

[0036] Fig.10 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0037] Fig.11is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0038] Fig.12 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0039] Fig.13 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0040] Fig.14 is a structural schematic diagram of another type of diverter plate provided in an embodiment of the present application;

[0041] Fig.15 It is a structural schematic diagram of a flow diversion component provided in an embodiment of the present application;

[0042] Fig.16 is a schematic structural diagram of another flow diversion component provided in an embodiment of the present application;

[0043] Fig.17 is a schematic structural diagram of another flow diversion component provided in an embodiment of the present application;

[0044] Fig.18 It is a structural schematic diagram of a diversion mechanism provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0046] It should be understood that the terms “first”, “second”, etc. used in the present application are only used for the purpose of distinguishing the description, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying an order.

[0047] In the description of the present application, the terms "up", "down", "left", "right", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limitations on the present application.

[0048] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, a conflicting connection or an integral connection; for ordinary technicians in this field, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0049] like Figure 1 As shown, Figure 1 It is a schematic diagram of the structure of an electronic device 100. The electronic device 100 may be a rapid thermal processing device, which may heat the substrate of a wafer to selectively or non-selectively produce a high-quality single crystal thin film having the same crystal structure as the substrate on the surface of the substrate, or perform annealing on the wafer, etc. The electronic device 100 may also be other devices, which is not limited in the embodiments of the present application.

[0050] The electronic device 100 may include a process chamber 10 and a manifold 30, wherein the manifold 30 is located in the process chamber 10. The process chamber 10 may include a top ( Figure 1 not shown), bottom ( Figure 1 The electronic device 100 may include a light assembly ( Figure 1 (not shown), the lamp group can be a high-power tungsten halogen lamp. When a film layer is grown on the substrate of the wafer, the substrate needs to be heated, and the lamp group can generate heat energy for heating the substrate. The lamp group is usually located in the process chamber 10 and at the top of the process chamber 10, and the space at the top is occupied by the lamp group. Therefore, the diverter plate 30 can be located on the side of the process chamber 10 to achieve the rational use of the space in the process chamber 10. Exemplarily, the diverter plate 30 can be fixed to the inner wall of the side of the process chamber 10. In other embodiments, the diverter plate 30 can also be located at other positions in the process chamber 10, which can be set as needed. Figure 1 The structure of the diverter plate 30 is only a schematic representation, and the structure of the diverter plate 30 can be set as needed, and the embodiment of the present application does not limit this.

[0051] It can be understood that the diverter plate 30 can divert the fluid, and the fluid can be gas or liquid, etc. The embodiment of the present application takes the diverter plate 30 diverting the gas as an example.

[0052] In some embodiments, the electronic device 100 may include a flow dividing component 40 , and the flow dividing component 40 may include at least two flow dividing plates 30 for dividing the fluid.

[0053] The electronic device 100 may include a shunt mechanism 21, and the shunt mechanism 21 and the shunt plate 30 may form a shunt device 20. The shunt device 20 may also include other structural parts. The embodiment of the present application does not limit the specific structure of the shunt device 20. The number of shunt plates 30 in the shunt device 20 may be one or at least two (it can be understood that when there are at least two shunt plates 30, at least two shunt plates 30 form a shunt assembly 40).

[0054] The electronic device 100 may further include a gas cabinet 101 and a mass flow controller 102, wherein the mass flow controller 102 is located in the gas cabinet 101. The number of the mass flow controller 102 may be one or more, such as one, two or three, etc. Figure 1 For example, the number of the mass flow controllers 102 is two. The gas in the gas cabinet 101 passes through the mass flow controller 102 and is transmitted to the flow dividing mechanism 21 through a pipeline, and then to the flow dividing plate 30 . The gas is divided in the flow dividing mechanism 21 and the flow dividing plate 30 .

[0055] In some embodiments, when producing a single crystal thin film on the substrate surface, hydrogen or oxygen or other gases may be introduced into the process chamber 10 to promote the growth of the thin film on the substrate surface. The hydrogen or oxygen or other gases are diverted by the diverter mechanism 21 and the diverter plate 30, which is conducive to uniform growth of the thin film, avoids product defects, and improves the quality and manufacturing yield of the wafer.

[0056] In some embodiments, when the wafer is annealed, nitrogen or oxygen or other gases may be introduced into the process chamber 10 to achieve the annealing process. The nitrogen or oxygen or other gases are diverted by the diverter mechanism 21 and the diverter plate 30, which is beneficial to the annealing uniformity, avoids product defects, and improves the quality and manufacturing yield of the wafer.

[0057] Figure 1 The electronic device 100 in the figure is only schematically shown, and the size, shape, structure, etc. of the electronic device 100 can be set as required. The present application does not limit the specific structure of the electronic device 100.

[0058] like Figure 2 and Figure 3 As shown, Figure 2 is a schematic diagram of the structure of a diverter plate 30, Figure 3 for Figure 2 The schematic diagram of the structure of the diverter plate 30 is shown in another angle. It can be understood that Figure 3 The LN in is Figure 2 L2 in.

[0059] The manifold 30 may include an inlet 31, N outlets 32, and a first flow channel L1 to an Nth flow channel LN. The inlet 31 and the N outlets 32 may be located on opposite sides of the manifold 30. For example, the inlet 31 is located on one side of the manifold 30, and the N outlets 32 are located on the other side of the manifold 30, and the N outlets 32 are arranged in sequence. The gas enters the manifold 30 from the inlet 31, passes through the diversion of the first flow channel L1 to the Nth flow channel LN, and flows out of the manifold 30 from the outlet 32. It can be understood that the gas is transmitted from one side of the manifold 30 to the other side of the manifold 30 and is diverted during the transmission process.

[0060] One end of the first flow channel L1 to the Nth flow channel LN is connected to the inlet 31, and the other end of the first flow channel L1 to the Nth flow channel LN corresponds to the N outlets 32 one by one and is connected to the N outlets 32 respectively. The length of each flow channel of the first flow channel L1 to the Nth flow channel LN is the same, and N is an integer greater than or equal to 2. The length of the first flow channel L1 refers to the length of the flow path of the gas in the first flow channel L1. The length of other flow channels refers to the length of the flow path of the gas in the corresponding flow channel.

[0061] Figure 2 and Figure 3 For example, N is 2, the number of flow channels is two, and the two flow channels are the first flow channel L1 and the second flow channel L2. The lengths of the first flow channel L1 and the second flow channel L2 are equal. Figure 4 and Figure 5 , Figure 4 is a schematic diagram of the structure of another type of splitter plate 30, Figure 5 for Figure 4 A schematic structural diagram of the diverter plate 30 shown in another angle. Figure 4 and Figure 5 For example, N is 3, the number of flow channels is three, and the three flow channels are respectively the first flow channel L1, the second flow channel L2, and the third flow channel L3. The lengths of the first flow channel L1, the second flow channel L2, and the third flow channel L3 are equal.

[0062] See also Figure 6 and Figure 7 , Figure 6 is a schematic diagram of the structure of another type of splitter plate 30, Figure 7 for Figure 6 A schematic structural diagram of the diverter plate 30 shown in another angle. Figure 6 and Figure 7 Take N as four, the number of flow channels as four, and the four flow channels as the first flow channel L1, the second flow channel L2, the third flow channel L3 and the fourth flow channel L4. The lengths of the first flow channel L1, the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 are equal. It can be understood that N can be five or six, etc., and this embodiment of the application is not limited to this.

[0063] Figures 2 to 7The diverter plates 30 shown in the figure all perform a primary diversion. In other embodiments, the diverter plates 30 may also perform a secondary diversion (see Figure 8 ) or three-way diversion, etc., which is not limited in the embodiments of the present application.

[0064] When the process gas applied to the wafer is unevenly distributed, especially when the gas distribution in the middle area and the edge area of ​​the wafer is uneven, it will cause problems such as uneven film growth or uneven annealing, thereby causing product defects, reducing product yield, and increasing production costs. In addition, due to the uneven thermal field distribution in the process chamber, the flow field disturbance caused by the moving components (for example, the substrate will be set on a turntable. In order to ensure the quality of the substrate and make the substrate heated evenly in the radial direction, the turntable will rotate, causing the substrate on the turntable to rotate at a high speed. The rotation of the turntable and the substrate will affect the gas distribution in the process chamber 10.) and other factors will affect the gas flow field distribution, resulting in uneven distribution of the gas flow field in the process chamber 10 in the radial direction of the substrate, and ultimately causing process uniformity and stability problems. It can be understood that the degree of reaction of the process gas on the substrate surface is different, which ultimately leads to poor process uniformity. Especially in the low-pressure wet thermal oxidation process, the uneven thickness of the oxide layer caused by the uneven flow field distribution is more obvious.

[0065] The embodiment of the present application sets the lengths of the flow channels from the first flow channel to the Nth flow channel to be the same, which is beneficial to improving the uniformity of the outlet pressure and gas distribution of the gas diverted by the diverter plate, and is beneficial to avoiding product defects, improving product yield, and reducing production costs.

[0066] It can be understood that the more outlets 32 there are on the diverter plate 30, the more conducive it is to achieving uniform air intake. Since the size of the diverter plate 30 is limited, the number of outlets 32 increases and the aperture needs to be reduced. However, the reduction in the aperture of the outlet 32 ​​will lead to an increase in pressure loss. The number of outlets 32 can be set as needed to balance uniform air intake and reduce pressure loss.

[0067] See also Figure 3 The first flow channel L1 may include a first flow segment 331, a second flow segment 332 and a first connecting segment 301. The first flow segment 331 and the second flow segment 332 are arranged along a first direction A1, and the first direction A1 is perpendicular to the surface where the outlet 32 ​​of the splitter plate 30 is located. The first connecting segment 301 connects the first flow segment 331 and the second flow segment 332.

[0068] The second flow channel L2 includes a first flow segment 331 , a third flow segment 333 and a second connecting segment 302 . The first flow segment 331 and the third flow segment 333 are arranged along the first direction A1 . The second connecting segment 302 connects the first flow segment 331 and the third flow segment 333 .

[0069] It can be understood that the flow segments that are not shared by the first flow channel L1 and the second flow channel L2 are symmetrically arranged. For example, the first connecting segment 301 and the second connecting segment 302 are flow segments that are not shared by the first flow channel L1 and the second flow channel L2. The first connecting segment 301 and the second connecting segment 302 are symmetrically arranged about the inlet 31, or the first connecting segment 301 and the second connecting segment 302 are symmetrically arranged about the center line 1, and the center line 1 is a virtual axis of symmetry, located between the first connecting segment 301 and the second connecting segment 302. The second flow segment 332 and the third flow segment 333 are flow segments that are not shared by the first flow channel L1 and the second flow channel L2. The second flow segment 332 and the third flow segment 333 are symmetrically arranged about the inlet 31, or the second flow segment 332 and the third flow segment 333 are symmetrically arranged about the center line 2, and the center line 2 is a virtual axis of symmetry, located between the second flow segment 332 and the third flow segment 333. The first flow channel L1 and the second flow channel L2 both include a first flow segment 331, which is a flow segment shared by the first flow channel L1 and the second flow channel L2. By setting the lengths of the flow channels to be the same and symmetrically arranging the unshared flow segments of different flow channels of the same length, the internal space of the manifold is reasonably utilized, so that the gas is evenly and symmetrically distributed in the chamber.

[0070] It is understandable that pressure loss will also affect gas uniformity to a certain extent. Using symmetrical flow channels of the same length can ensure that the pressure loss in the flow channels is also symmetrically distributed, thereby ensuring the uniformity of air intake and helping to improve product yield.

[0071] The gas enters the first flow section 331 through the inlet 31, and is split at the end of the first flow section 331 away from the inlet 31. A portion of the gas enters the first connecting section 301 and the second flow section 332 in sequence, and is discharged through an outlet 32. Another portion of the gas enters the second connecting section 302 and the third flow section 333 in sequence, and is discharged through another outlet 32. A primary split of the gas is achieved at the end of the first flow section 331 away from the inlet 31. It can be understood that Figures 4 to 7 The gas distribution in the manifold shown is shown in Figure 3 , no more details.

[0072] like Figure 8 As shown, Figure 8 Schematic diagram of another type of flow splitter 30. The flow splitter 30 can perform secondary flow splitting. The first flow channel L1 includes X flow segments arranged in sequence along the first direction A1, where X is an integer greater than or equal to 2, the first flow segment is connected to the inlet, and the Xth flow segment is connected to the outlet. Figure 8The first flow channel L1 in the example is X=3. The first flow channel L1 includes a first flow segment 331, a first connecting segment 301, a second flow segment 332, a third connecting segment 303 and a fourth flow segment 334 which are connected in sequence. The first flow segment 331, the second flow segment 332 and the fourth flow segment 334 are arranged along the first direction A1. The first flow segment 331 is the first flow segment of the first flow channel L1, the second flow segment 332 is the second flow segment of the first flow channel L1, and the fourth flow segment 334 is the third flow segment of the first flow channel L1. The first flow segment 331 is connected to the inlet 31. The first flow segment 331 and the second flow segment 332 are staggered in the second direction A2, and the second flow segment 332 and the fourth flow segment 334 are staggered in the second direction A2, and the second direction A2 is perpendicular to the first direction A1. The staggered arrangement of the first flow segment 331 and the second flow segment 332 in the second direction A2 can be understood as the first flow segment 331 and the second flow segment 332 are spaced apart in the second direction A2. The staggered arrangement of the second flow segment 332 and the fourth flow segment 334 in the second direction A2 can be understood as the second flow segment 332 and the fourth flow segment 334 being arranged at intervals in the second direction A2.

[0073] The second flow channel L2 includes a first flow segment 331 , a second connecting segment 302 , a third flow segment 333 , a fourth connecting segment 304 and a fifth flow segment 335 which are connected in sequence. The first flow segment 331 , the third flow segment 333 and the fifth flow segment 335 are arranged along the first direction A1 .

[0074] The third flow channel L3 includes a first flow segment 331 , a first connecting segment 301 , a second flow segment 332 , a fifth connecting segment 305 and a sixth flow segment 336 which are connected in sequence.

[0075] The fourth flow channel L4 includes a first flow segment 331 , a second connecting segment 302 , a third flow segment 333 , a sixth connecting segment 306 , and a seventh flow segment 337 which are connected in sequence.

[0076] It can be understood that the lengths of the first flow channel L1, the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 are equal, which is conducive to achieving uniformity after gas diversion and improving the yield of the product.

[0077] It can be understood that the flow segments that are not shared by the first flow channel L1 and the second flow channel L2 are symmetrically arranged, and the flow segments that are not shared by the third flow channel L3 and the fourth flow channel L4 are symmetrically arranged, which is conducive to achieving symmetrical gas diversion.

[0078] The gas enters the first flow section 331 through the inlet 31, and undergoes a first split at the end of the first flow section 331 away from the inlet 31. A portion of the gas enters the first connecting section 301 and the second flow section 332 in sequence, and undergoes a second split at one end of the second flow section 332, and respectively enters the third connecting section 303, the fourth flow section 334, and the fifth connecting section 305 and the sixth flow section 336. Another portion of the gas enters the second connecting section 302 and the third flow section 333 in sequence, and undergoes a second split at one end of the third flow section 333, and respectively enters the sixth connecting section 306, the seventh flow section 337, and the fourth connecting section 304 and the fifth flow section 335.

[0079] In other embodiments, the manifold 30 may further include a fifth flow channel or a sixth flow channel, and the length of the fifth flow channel or the sixth flow channel is equal to the length of the first flow channel L1 , the second flow channel L2 , the third flow channel L3 and the fourth flow channel L4 .

[0080] It can be understood that the diverter plate 30 can also perform three-time diversion or four-time diversion, etc., and the present application does not limit this, and the specific configuration can be based on needs.

[0081] See also Figure 8 In some embodiments, the size of the first flow channel L1 in the first direction A1 is greater than or equal to 20 mm and less than or equal to 80 mm. If the size of the first flow channel L1 in the first direction A1 is less than 20 mm, the size of the first flow channel in the first direction is too small, which is not conducive to setting up multi-stage diversion of the flow channel and increases the difficulty of the manufacturing process of the flow channel. If the size of the first flow channel L1 in the first direction A1 is greater than 80 mm, the size of the first flow channel L1 is too large and the pressure loss of the gas is large. In the embodiment of the present application, by setting the size of the first flow channel L1 in the first direction A1 to be greater than or equal to 20 mm and less than or equal to 80 mm, it is beneficial to reduce pressure loss and reasonably design the diversion of the flow channel.

[0082] It can be understood that, similar to the first flow channel L1, the sizes of the second flow channel L2, the third flow channel L3, and the fourth flow channel L4 in the first direction A1 can be set to be greater than or equal to 20 mm and less than or equal to 80 mm. When the splitter plate 30 includes more flow channels, for example, when the splitter plate 30 also includes a fifth flow channel or a sixth flow channel, the sizes of the fifth flow channel and the sixth flow channel in the first direction A1 can be greater than or equal to 20 mm and less than or equal to 80 mm.

[0083] See also Figure 8 In some embodiments, the cross-sectional area of ​​the first flow segment is twice the cross-sectional area of ​​the Yth flow segment. Y-1times, Y is an integer greater than 1 and less than or equal to X. Exemplarily, the area of ​​the cross section of the first flow segment 331 is twice the area of ​​the cross section of the second flow segment 332, and four times the area of ​​the cross section of the fourth flow segment 334, which is conducive to avoiding the pressure drop caused by the gas in the first flow segment 331 flowing to the second flow segment 332 and the fourth flow segment 334. It can be understood that the cross sections of each flow segment in other flow channels can satisfy the above-mentioned corresponding relationship, for example, the area of ​​the cross section of the first flow segment 331 is twice the area of ​​the cross section of the third flow segment 333, and four times the area of ​​the cross section of the fifth flow segment 335.

[0084] like Fig. 9 As shown, Fig. 9 It is a schematic diagram of the structure of a diverter plate 30. The cross section of at least one of the first flow channel L1 to the Nth flow channel is circular. For example, the cross section of the first flow channel L1 of the diverter plate 30 is circular. It can be understood that the cross sections of the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 can all be circular. In the embodiment of the present application, by setting the cross section of the first flow channel L1 to be circular, it is helpful to reduce the pressure loss during the gas flow process. By setting the cross sections of the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 to be circular, it is helpful to reduce the pressure loss during the gas flow process.

[0085] In some embodiments, the diameter of the cross section of the first flow channel L1 is greater than or equal to 1 mm and less than or equal to 3 mm. When the diameter of the cross section of the first flow channel L1 is less than 1 mm, the pressure loss of the gas is too large; when the diameter of the cross section of the first flow channel L1 is greater than 3 mm, the first flow channel L1 occupies more space of the manifold 30, which is not conducive to setting more flow channels on the manifold 30. In the embodiment of the present application, by setting the cross section diameter of the first flow channel L1 to be less than or equal to 3 mm, the number of flow channels on the manifold 30 can be set to be larger, which is conducive to the uniformity of intake air.

[0086] In some embodiments, the diameters of the cross sections of the second flow channel L2 , the third flow channel L3 , and the fourth flow channel L4 may be greater than or equal to 1 mm and less than or equal to 3 mm.

[0087] like Fig.10 As shown, Fig.10It is a schematic diagram of the structure of another type of diverter plate 30. The cross section of at least one of the first flow channel L1 to the Nth flow channel is elliptical. For example, the cross section of the first flow channel L1 of the diverter plate 30 is elliptical. It can be understood that the cross sections of the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 can all be elliptical. In the embodiment of the present application, by setting the cross section of the first flow channel L1 to be elliptical, it is helpful to reduce the pressure loss during the gas flow process. By setting the cross sections of the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 to be elliptical, it is helpful to reduce the pressure loss during the gas flow process.

[0088] In some embodiments, the ratio of the major axis to the minor axis of the cross section of the first flow channel L1 is greater than 1 and less than or equal to 2. When the ratio of the major axis to the minor axis of the cross section of the first flow channel L1 is greater than 2, the first flow channel L1 is more flattened, and the pressure loss of the gas is too large. It can be understood that the major axis of the cross section of the first flow channel L1 can be along the thickness direction of the diverter plate 30, or the major axis of the cross section of the first flow channel L1 can be perpendicular to the thickness direction of the diverter plate 30, or the major axis of the cross section of the first flow channel L1 can also be along other directions.

[0089] In some embodiments, the ratio of the major axis to the minor axis of the cross-sections of the second flow channel L2 , the third flow channel L3 , and the fourth flow channel L4 may be greater than 1 and less than or equal to 2.

[0090] like Fig.11 As shown, Fig.11 Schematic diagram of the structure of another type of manifold 30. The cross section of at least one of the first manifold L1 to the Nth manifold is an M-gon. For example, the cross section of the first manifold L1 of the manifold 30 is an M-gon, where M is an integer greater than or equal to 3 and less than or equal to 6. Exemplarily, M can be 3, and the cross section of the first manifold L1 is a triangular shape, i.e., a triangle. It can be understood that the cross sections of the second manifold L2, the third manifold L3, and the fourth manifold L4 can be triangular shapes.

[0091] like Fig.12 As shown, Fig.12 : is a schematic diagram of the structure of another type of splitter plate 30. The cross section of the first flow channel L1 of the splitter plate 30 is an M-gon, where M is an integer greater than or equal to 3 and less than or equal to 6. For example, M can be 4, and the cross section of the first flow channel L1 is a quadrilateral, such as a rectangle, a square, a parallelogram, or a rhombus. It can be understood that the cross sections of the second flow channel L2, the third flow channel L3, and the fourth flow channel L4 can be quadrilaterals, such as rectangles, squares, parallelograms, or rhombuses.

[0092] In other embodiments, the first flow channel L1, the second flow channel L2, the third flow channel L3 and the fourth flow channel L4 or other more flow channels may also be pentagonal or hexagonal. The more sides the cross section of the flow channel has, the closer it is to a circle, and the smaller the pressure loss. Different air intake distribution and pressure may be required in different scenarios (for example, for different areas of the process chamber). By setting cross sections with different numbers of sides, the air intake distribution and pressure can be adjusted.

[0093] like Fig.13 As shown, Fig.13 It is a schematic diagram of the structure of another type of diverter plate 30. The first flow channel L1 includes at least two flow segments arranged along the first direction A1, and the angle α between the extension direction of the flow segment of the first flow channel L1 closest to the outlet and the first direction A1 is greater than or equal to 0°C and less than or equal to 60°C. It can be understood that the flow segment of the first flow channel L1 closest to the outlet can be tilted. Exemplarily, taking the first flow channel L1 including the first flow segment 331, the second flow segment 332 and the fourth flow segment 334 arranged along the first direction A1 as an example, the fourth flow segment 334 is closest to the outlet 32, and the angle α between the fourth flow segment 334 and the first direction A1 is greater than or equal to 0°C and less than or equal to 60°C. When the angle α between the fourth flow segment 334 and the first direction A1 is equal to 0°C, the fourth flow segment 334 is perpendicular to the side where the outlet 32 ​​is located. When the angle α between the fourth flow segment 334 and the first direction A1 is greater than 0°C and less than or equal to 60°C, the fourth flow segment 334 is tilted, and the direction of gas exhaust can be controlled according to the angle α, and the air intake angle can be accurately adjusted, which is beneficial to improving the yield of wafer manufacturing. For example, in a scenario where there are high-speed moving parts in the process chamber, the uneven flow field caused by the movement of the parts can be compensated by adjusting the air intake direction. If the angle α between the fourth flow segment 334 and the first direction A1 is greater than 60°, the fourth flow segment 334 will occupy more space in the second direction A2, which is not conducive to the miniaturization of the diverter plate 30.

[0094] It can be understood that the second flow channel L2 may include at least two flow segments arranged along the first direction A1, and the angle α between the extension direction of the flow segment closest to the outlet of the second flow channel L2 and the first direction A1 is greater than or equal to 0°C and less than or equal to 60°C. The third flow channel L3 and the fourth flow channel L4 or other more flow channels can be set to have the angle α between the extension direction of the flow segment closest to the outlet and the first direction A1 be greater than or equal to 0°C and less than or equal to 60°C.

[0095] It can be understood that the flow section of the first flow channel L1 closest to the outlet can be inclined to the left, can be inclined to the right, can be inclined forward or backward, etc., and this embodiment of the present application is not limited to this.

[0096] like Fig.14 As shown, Fig.14Schematic diagram of another structure of the splitter plate 30. In some embodiments, the connection between the first flow segment 331 of the first flow channel L1 and the first connecting segment 301 is arc-shaped and / or the connection between the second flow segment 332 and the first connecting segment 301 is arc-shaped, which is conducive to reducing the pressure loss of the fluid.

[0097] In some embodiments, the diameter of the arc is greater than or equal to 0.5 mm and less than or equal to 4 mm. The diameter of the arc is greater than or equal to 0.5 mm, which is beneficial to reducing pressure loss and turbulence.

[0098] It can be understood that the connection between the second flow segment 332 and the third connecting segment 303 of the first flow channel L1 and the connection between the third connecting segment 303 and the fourth flow segment 334 can be set to an arc shape to reduce the pressure loss of the fluid passing through the first flow channel L1.

[0099] It can be understood that the corners of the second flow channel L2, the third flow channel L3, the fourth flow channel L4 or other more flow channels can be set to be arc-shaped to reduce the pressure loss of the fluid passing through the flow channel.

[0100] like Fig.15 As shown, Fig.15 It is a schematic diagram of the structure of a diverter assembly 40. The diverter assembly 40 includes at least two diverter plates 30, and the at least two diverter plates 30 are arranged in sequence. The arrangement direction of the at least two diverter plates 30 is set at an angle to the arrangement direction of the inlet 31 and the outlet 32. Two adjacent diverter plates 30 can be separated from each other. For example, at least two diverter plates 30 are detachably connected, and at least two diverter plates 30 can be detachably connected by screws or the like. In other embodiments, at least two diverter plates 30 may also be unconnected, and adjacent diverter plates may be fitted or spaced apart. The number of diverter plates 30 may be two, three, four, five, etc., which is not limited in the embodiments of the present application.

[0101] The embodiment of the present application increases the flexibility of the structure of the diverter assembly 40 by setting at least two diverter plates 30 as a split structure. A combination of diverter plates 30 with different flow channels can be selected to adjust the airflow field according to different process scenarios. One or more diverter plates 30 can be replaced as needed without replacing the entire diverter assembly 40 to adapt to different process requirements and reduce production costs.

[0102] It can be understood that by designing at least two diverter plates 30 as a split structure, diverter plates with different apertures, angles, and cross-sectional shapes can be combined and embedded in the process chamber to adjust the flow field, thereby achieving non-uniform air intake to balance the uneven flow field in the process chamber.

[0103] In some embodiments, the flow segments closest to the outlet of at least two diverter plates 30 extend in different directions. For example, the flow segments closest to the outlet of two diverter plates 30 in the diverter assembly 40 may extend in different directions, and the flow segments closest to the outlet of three diverter plates 30 in the diverter assembly 40 may extend in different directions. Fig.15 In the example, the number of the diverter plates 30 is four. The angle between the extension direction of the flow segments closest to the outlet of the two middle diverter plates 30 and the first direction A1 is equal to 0°. The angle between the extension direction of the flow segments closest to the outlet of the two outermost diverter plates 30 and the first direction A1 is greater than 0° and less than or equal to 60°, and the angle between the extension direction of the flow segments closest to the outlet of the two outermost diverter plates 30 and the middle two diverter plates 30 is different. Fig.15 The angles between the extension direction of the flow segments closest to the outlet of the leftmost diverter plate 30 and the first direction A1 are different. The edge area of ​​the wafer is greatly affected by the disturbance. In the embodiment of the present application, the angle between the extension direction of the flow segments closest to the outlet of the two edge diverter plates 30 and the first direction A1 is greater than 0° and less than or equal to 60°, which is conducive to improving the manufacturing yield of the product.

[0104] In the embodiment of the present application, by setting at least two diverter plates 30 with flow sections closest to the outlet extending in different directions, a combination of diverter plates 30 with different flow channels is used to adjust the airflow field to adapt to different process requirements and improve the manufacturing yield of the product.

[0105] like Fig.16 As shown, Fig.16 Schematic diagram of the structure of another flow diverter assembly 40. The sizes of the outlets 32 of at least two of the diverter plates 30 in the diverter assembly 40 are different. For example, the sizes of the outlets 32 of two diverter plates 30 in the diverter assembly 40 may be different, and the sizes of the outlets 32 of three diverter plates 30 in the diverter assembly 40 may be different. In the embodiment of the present application, by setting the sizes of the outlets 32 of at least two diverter plates 30 to be different, a combination of diverter plates 30 with different flow channels is used to adjust the airflow field, so as to adapt to different process requirements and improve the manufacturing yield of the product.

[0106] For example, Fig.16 In the example where there are four diverter plates 30, the size of the outlets 32 of the two middle diverter plates 30 is smaller than the size of the outlets 32 of the two outermost diverter plates 30. The edge area of ​​the wafer is greatly affected by the disturbance. In the embodiment of the present application, the size of the outlets 32 of the two middle diverter plates 30 is smaller than the size of the outlets 32 of the two outermost diverter plates 30, which is conducive to improving the manufacturing yield of the product.

[0107] like Fig.17 As shown, Fig.17: is a schematic diagram of the structure of another flow diverter assembly 40. The shapes of the outlets 32 of at least two of the diverter plates 30 in the flow diverter assembly 40 are different. For example, the shapes of the outlets 32 of two diverter plates 30 in the flow diverter assembly 40 may be different, and the shapes of the outlets 32 of three diverter plates 30 in the flow diverter assembly 40 may be different. In the embodiment of the present application, by setting the shapes of the outlets 32 of at least two diverter plates 30 to be different, a combination of diverter plates 30 with different flow channels is used to adjust the airflow field, so as to adapt to different process requirements and improve the manufacturing yield of the product.

[0108] For example, Fig.17 In the example, the number of the diverter plates 30 is four, and the shapes of the outlets 32 of the two middle diverter plates 30 are circular, and the shapes of the outlets 32 of the two outermost diverter plates 30 are triangular. The edge area of ​​the wafer is greatly affected by the disturbance. In the embodiment of the present application, the shapes of the outlets 32 of the two middle diverter plates 30 are circular, and the shapes of the outlets 32 of the two outermost diverter plates 30 are triangular, which is conducive to improving the manufacturing yield of the product.

[0109] It is understandable that the flow channels of the plurality of diverter plates 30 may also be in other combination forms to meet the needs of different application scenarios and improve the flexibility of the structure of the diverter assembly 40 .

[0110] Combined with reference Figure 1 and Fig.18 , Fig.18 1 is a schematic diagram of the structure of the diverter mechanism 21. The diverter mechanism 21 may include a diverter 22 and a plurality of diverter pipes, the diverter 22 is located outside the process chamber 10, and the diverter pipes are connected to the diverter 22 and the diverter plate 30. It can be understood that the number of diverter pipes is the same as the number of diverter plates 30. When there is one diverter plate 30, the number of diverter pipes is also one. When there are multiple diverter plates 30, the number of diverter pipes is also multiple, and multiple refers to two or more. One end of the multiple diverter pipes is connected to the diverter 22, and the other end of the multiple diverter pipes is connected to at least two diverter plates 30 one by one, and at least two diverter pipes are symmetrically arranged about the diverter 22. The multiple diverter pipes can be a first diverter pipe 231 and a second diverter pipe 232, and the first diverter pipe 231 and the second diverter pipe 232 are symmetrically arranged about the diverter 22, and the first diverter pipe 231 and the second diverter pipe 232 are both connected to the diverter 22 and the diverter plate 30. It can be understood that the first diversion pipe 231 and the second diversion pipe 232 have the same length.

[0111] It is understandable that if the inlet pressure is not balanced, it will cause the gas flow field in the process chamber 10 to be asymmetric. Even if the turntable and the substrate rotate at high speed, it is difficult to eliminate the uneven distribution of the gas flow field in the radial direction of the substrate. Therefore, in the embodiment of the present application, the first diversion pipeline 231 and the second diversion pipeline 232 are symmetrical about the diverter 22, and the first diversion pipeline 231 and the second diversion pipeline 232 have the same length, which is conducive to improving the uniformity of the gas pressure diverted by the diverter 22, so that the pressure of the gas entering the diverter plate 30 is symmetrically distributed.

[0112] It is understandable that the pressure loss of the gas in the pipeline will also affect the intake uniformity to a certain extent. The embodiment of the present application uses a symmetrical gas pipeline connected to the diverter plate 30 to ensure that the pressure loss in the pipeline is also symmetrically distributed, which is conducive to the use of the diverter 22 to accurately adjust the intake air flow rate ratio.

[0113] The number of the shunt pipes can also be five, and the five shunt pipes are respectively the first shunt pipe 231, the second shunt pipe 232, the third shunt pipe 233, the fourth shunt pipe 234 and the fifth shunt pipe 235. The third shunt pipe 233 and the fourth shunt pipe 234 are symmetrically arranged about the diverter 22, and the third shunt pipe 233 and the fourth shunt pipe 234 have the same length, and the third shunt pipe 233 and the fourth shunt pipe 234 are both connected to the diverter 22 and the diverter plate 30. The length of the third shunt pipe 233 and the fourth shunt pipe 234 can be less than the length of the first shunt pipe 231 and the second shunt pipe 232, and the length of the third shunt pipe 233 and the fourth shunt pipe 234 can also be equal to the length of the first shunt pipe 231 and the second shunt pipe 232. The fifth shunt pipe 235 is connected to the diverter 22 and the diverter plate 30.

[0114] In some embodiments, the first diversion pipe 231 and the second diversion pipe 232 correspond to the outermost circle area of ​​the substrate and supply gas to the outermost circle area, the third diversion pipe 233 and the fourth diversion pipe 234 correspond to the sub-outer circle area of ​​the substrate and supply gas to the sub-outer circle area, and the fifth diversion pipe 235 corresponds to the central area of ​​the substrate and supplies gas to the central area.

[0115] The number of diversion pipes can be two, three, four, five or six, etc., which can be configured according to the process requirements. As the number of diversion pipes increases, the gas segmentation is finer and the gas uniformity control accuracy is higher. Fig.18 The embodiment shown takes five branch pipes as an example.

[0116] In some embodiments, the flow divider 22 is located at the middle position of the side 11 of the process chamber 10, which is conducive to improving the uniformity of the gas diverted by the flow divider 22. The flow divider 22 can adjust the pressure, flow rate, flow rate, etc. of the fluid entering different diversion pipes to achieve zoning regulation of the fluid, so as to achieve the regulation of the air flow field in the electronic device 100 and improve the product yield of the wafer.

[0117] The embodiment of the present application sets the lengths of the first flow channel to the Nth flow channel to be the same, which is conducive to improving the uniformity of the outlet pressure and the uniformity of the gas distribution of the manifold plate 30, which is conducive to avoiding product defects, improving product yield, and reducing production costs. The embodiment of the present application sets the first diversion pipeline 231 and the second diversion pipeline 232 symmetrically about the diverter 22, which is conducive to improving the uniformity of the gas diverted by the diverter 22, so that the pressure of the gas entering the manifold plate 30 is symmetrically distributed.

Claims

1. A manifold, applied to an electronic device, the electronic device comprising a process chamber and a moving component located in the process chamber, the manifold located in the process chamber, used to compensate for the uneven flow field caused by the moving component, characterized in that: The manifold includes an inlet, N outlets, and first to Nth flow channels, wherein the inlet is located on one side of the manifold, and the N outlets are located on the other side of the manifold, one end of the first to Nth flow channels are connected to the inlet, and the other end of the first to Nth flow channels are connected to the N outlets one by one, and the lengths of the flow channels from the first to Nth flow channels are the same, and N is an integer greater than or equal to 2; Each of the first flow channel to the Nth flow channel includes at least two flow segments arranged along a first direction, and an angle between an extension direction of the flow segment from the first flow channel to the Nth flow channel closest to the outlet and the first direction is greater than 0° and less than or equal to 60°, and the first direction is perpendicular to the surface of the outlet of the diverter plate.

2. The manifold according to claim 1, characterized in that: A cross section of at least one of the first flow channel to the Nth flow channel is circular.

3. The manifold according to claim 2, characterized in that: The diameter of the cross section of the flow channel having a circular cross section is greater than or equal to 1 mm and less than or equal to 3 mm.

4. The manifold according to claim 1, characterized in that: A cross section of at least one of the first flow channel to the Nth flow channel is elliptical.

5. The manifold according to claim 4, characterized in that: The ratio of the major axis to the minor axis of the cross section of the flow channel with an elliptical cross section is greater than 1 and less than or equal to 2.

6. The manifold according to claim 1, characterized in that: The cross section of at least one of the first flow channel to the Nth flow channel is an M-gon, where M is an integer greater than or equal to 3 and less than or equal to 6.

7. The splitter plate according to any one of claims 1 to 6, characterized in that: A dimension of the first flow channel in a first direction is greater than or equal to 20 mm and less than or equal to 80 mm, and the first direction is perpendicular to a surface of the diverter plate where the outlet is located.

8. The manifold according to claim 1, wherein: The first flow channel includes X flow segments arranged in sequence along the first direction, X is an integer greater than or equal to 2, the first flow segment is connected to the inlet, the Xth flow segment is connected to the outlet, and the cross-sectional area of ​​the first flow segment is twice the cross-sectional area of ​​the Yth flow segment. Y-1 times, Y is an integer greater than 1 and less than or equal to X, and the first direction is perpendicular to the surface of the diverter plate where the outlet is located.

9. The manifold according to claim 1, characterized in that: The first flow channel includes a connecting section and a first flow section and a second flow section arranged in sequence along a first direction, the first flow section and the second flow section are staggered in the second direction, the connecting section connects the first flow section and the second flow section, the connection between the first flow section and the connecting section is an arc and / or the connection between the second flow section and the connecting section is an arc, the first direction is perpendicular to the surface of the outlet of the diverter plate, and the second direction is perpendicular to the first direction.

10. The manifold according to claim 9, characterized in that: The diameter of the arc is greater than or equal to 0.5 mm and less than or equal to 4 mm.

11. A flow diversion component, characterized in that: It includes the diverter plate as described in any one of claims 1 to 10, the number of the diverter plates is at least two, at least two of the diverter plates are arranged in sequence, the arrangement direction of at least two of the diverter plates is set at an angle to the arrangement direction of the inlet and the outlet, and two adjacent diverter plates can be separated from each other.

12. The flow dividing assembly according to claim 11, characterized in that: The flow segments of at least two of the diverter plates closest to the outlet have different extension directions, and / or the outlets of at least two of the diverter plates have different sizes, and / or the outlets of at least two of the diverter plates have different shapes.

13. A flow diversion device, characterized in that: It includes a diverter mechanism and a diverter assembly as described in claim 11 or 12, wherein the diverter mechanism includes a diverter and a plurality of diverter pipes, the number of the diverter pipes is the same as the number of the diverter plates, one ends of the plurality of diverter pipes are connected to the diverter, the other ends of the plurality of diverter pipes are connected to at least two of the diverter plates one by one, and at least two of the diverter pipes are symmetrically arranged about the diverter.

14. An electronic device, characterized in that: It comprises a process chamber and the diverter device as claimed in claim 13, wherein the diverter plate is located in the process chamber, and the diverter is located outside the process chamber.

15. An electronic device, characterized in that: It comprises a process chamber and a flow diversion component as claimed in claim 11 or 12, wherein the flow diversion component is located in the process chamber.

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