A leakage fault location method and system

Abstract

The present application discloses a method and system for locating a leakage fault, the method comprising: obtaining a shell image of a device to be detected, extracting a scratch area of ​​the shell image; constructing a three-dimensional scratch model according to the scratch area; inputting the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, the electric field distribution map being used to characterize the degree of electric field distortion; obtaining a temperature rise detection area of ​​the device to be detected according to the electric field distribution map; performing a temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device; wherein the electric field distribution model is trained by a scratch area sample and a corresponding electric field distribution map used to characterize the degree of electric field distortion. The embodiment of the present application can realize the precise positioning of the leakage area of ​​the metal shell of the device.

Description

Technical Field

[0001] The present application relates to the field of electric power technology, and in particular to a leakage fault location method and system. Background Art

[0002] When there are scratches on the metal casing of an electrical device, the metal casing of the electrical device may leak electricity, posing a great hazard to the safety of the operator. Currently, a test pen is mainly used to determine whether the metal casing of the electrical device is leaking electricity. However, this solution cannot locate the leakage area of ​​the metal casing of the device. Summary of the invention

[0003] The present application provides a leakage fault location method and system to solve the problem that the prior art cannot locate the leakage area of ​​the metal casing of the equipment.

[0004] To achieve the above objectives, the present invention provides a method for locating a leakage fault, including:

[0005] Acquire a shell image of the device to be inspected, and extract a scratch area of ​​the shell image;

[0006] constructing a three-dimensional scratch model according to the scratch area;

[0007] Inputting the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion;

[0008] According to the electric field distribution diagram, obtaining a temperature rise detection area of ​​the device to be detected;

[0009] Performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device;

[0010] The electric field distribution model is obtained by training with scratch area samples and corresponding electric field distribution maps for characterizing the degree of electric field distortion.

[0011] As an improvement to the above solution, the electric field distribution model is obtained by the following steps:

[0012] Acquire a shell image sample, and extract a scratch area sample of the shell image sample;

[0013] constructing a three-dimensional scratch model sample of the scratch area sample;

[0014] Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram;

[0015] Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion;

[0016] The electric field distribution model is obtained by training according to the scratch area sample, the electric field distribution map and the electric field distortion degree.

[0017] As an improvement of the above solution, the electric field simulation is performed on the three-dimensional scratch model sample to obtain an electric field distribution diagram, including:

[0018] Simulation boundary conditions and material properties are set, a potential difference is applied to the three-dimensional scratch model sample, and an electric field distribution is obtained using a finite element method solver to form an electric field distribution diagram.

[0019] As an improvement of the above solution, constructing a three-dimensional scratch model according to the scratch area includes:

[0020] Obtaining edge roughness parameters of the scratch area;

[0021] Generate a scratch edge profile curve using the edge roughness parameter;

[0022] A three-dimensional scratch model is constructed according to the scratch edge contour curve.

[0023] As an improvement of the above solution, obtaining the temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram includes:

[0024] According to the electric field distribution diagram, a first region is acquired, where the first region is a region where the degree of electric field distortion is greater than a preset degree of electric field distortion;

[0025] According to the position of the first area on the device to be detected, a temperature rise detection area of ​​the device to be detected is obtained.

[0026] As an improvement of the above solution, the temperature rise detection is performed on the temperature rise detection area to obtain the leakage fault area of ​​the device, including:

[0027] Performing temperature rise detection on the temperature rise detection area to obtain a second area, where the second area is an area that meets a preset temperature rise condition;

[0028] The second area is positioned as a leakage fault area.

[0029] As an improvement of the above solution, the temperature rise detection is performed on the temperature rise detection area to obtain the second area, including:

[0030] Obtaining a thermal image of the temperature rise detection area by means of an infrared thermal imager;

[0031] Convert the thermal image into a grayscale image and preprocess the grayscale image;

[0032] According to a preset mapping relationship between grayscale value and temperature, a temperature value of each pixel in the grayscale image is obtained;

[0033] According to the plurality of temperature values, obtaining temperature rise information of the temperature rise detection area;

[0034] A second region is obtained according to the temperature rise information, where the second region is a region that meets a preset temperature rise condition.

[0035] As an improvement of the above solution, the preset temperature rise condition includes at least one of the following:

[0036] The temperature rise rate is greater than the preset temperature rise rate;

[0037] The temperature rise duration is greater than the preset temperature rise duration;

[0038] The temperature rise is greater than the preset temperature rise.

[0039] To achieve the above purpose, the present application also provides a leakage fault location system, including:

[0040] A first acquisition module, used to acquire a shell image of the device to be detected and extract a scratch area of ​​the shell image;

[0041] A construction module, used for constructing a three-dimensional scratch model according to the scratch area;

[0042] A second acquisition module is used to input the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion;

[0043] A third acquisition module is used to acquire a temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram;

[0044] A fault location module, used for performing temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device;

[0045] The electric field distribution model is obtained by training with scratch area samples and corresponding electric field distribution maps for characterizing the degree of electric field distortion.

[0046] As an improvement of the above solution, the leakage fault location system further includes: a model training module, which is used to:

[0047] Acquire a shell image sample, and extract a scratch area sample of the shell image sample;

[0048] constructing a three-dimensional scratch model sample of the scratch area sample;

[0049] Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram;

[0050] Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion;

[0051] The electric field distribution model is obtained by training according to the scratch area sample, the electric field distribution map and the electric field distortion degree.

[0052] Compared with the prior art, the embodiment of the present application provides a method and system for locating a leakage fault, which obtains the shell image of the device to be detected and extracts the scratch area of ​​the shell image; constructs a three-dimensional scratch model based on the scratch area; inputs the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, and the electric field distribution map is used to characterize the degree of electric field distortion; obtains the temperature rise detection area of ​​the device to be detected based on the electric field distribution map; performs temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device; wherein the electric field distribution model is trained by scratch area samples and the corresponding electric field distribution map used to characterize the degree of electric field distortion. It can be seen that the embodiment of the present application realizes the precise positioning of the leakage area of ​​the metal shell of the device by combining the degree of electric field distortion and temperature rise changes of the device, and provides data support for equipment maintenance decisions. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 is a flow chart of a leakage fault locating method provided in an embodiment of the present application;

[0054] Figure 2 It is a structural block diagram of a leakage fault location system provided in an embodiment of the present application;

[0055] Figure 3 It is a structural block diagram of a leakage fault locating device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0056] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0057] See also Figure 1 , Figure 1 : is a flow chart of a leakage fault locating method provided in an embodiment of the present application, the leakage fault locating method comprising:

[0058] S1. Acquire a shell image of the device to be detected, and extract a scratch area of ​​the shell image;

[0059] S2. constructing a three-dimensional scratch model according to the scratch area;

[0060] S3, inputting the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion;

[0061] S4. Obtaining a temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram;

[0062] S5, performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device;

[0063] The electric field distribution model is obtained by training with scratch area samples and corresponding electric field distribution maps for characterizing the degree of electric field distortion.

[0064] It is understandable that when there are scratches on the metal shell of the device, it will affect the local electric field distribution until the characteristics of the scratches reach a specific threshold, which will form an electric field concentration effect near the scratches, making the local electric field strength much higher than the average level, forming electric field distortion. Therefore, the embodiment of the present application first detects the shell image of the device to obtain the high-risk area of ​​leakage faults. In order to further improve the positioning accuracy, this area is used as the temperature rise detection area, and the temperature rise detection is performed to obtain the leakage fault area of ​​the device, thereby achieving accurate positioning of the leakage area of ​​the metal shell of the device and providing data support for equipment maintenance decisions.

[0065] In an optional embodiment, the electric field distribution model is obtained by the following steps:

[0066] Acquire a shell image sample, and extract a scratch area sample of the shell image sample;

[0067] constructing a three-dimensional scratch model sample of the scratch area sample;

[0068] Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram;

[0069] Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion;

[0070] The electric field distribution model is obtained by training according to the scratch area sample, the electric field distribution map and the electric field distortion degree.

[0071] In an embodiment of the present application, an electric field distribution model is obtained by training with three-dimensional scratch model samples and corresponding electric field distribution maps that characterize the degree of electric field distortion, so that high-risk areas of leakage faults under various scratch conditions can be obtained through the electric field distribution model.

[0072] In an optional embodiment, performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram includes:

[0073] Simulation boundary conditions and material properties are set, a potential difference is applied to the three-dimensional scratch model sample, and an electric field distribution is obtained using a finite element method solver to form an electric field distribution diagram.

[0074] In the embodiment of the present application, simulation boundary conditions and material properties are set, a potential difference is applied to the three-dimensional scratch model sample, and the electric field distribution is obtained using a finite element method solver to form an electric field distribution map. The potential difference is determined according to the breakdown field strength of the material, and the electric field distribution is obtained by performing electric field simulation on the three-dimensional scratch model sample, and the electric field distribution map is drawn.

[0075] In an optional embodiment, constructing a three-dimensional scratch model according to the scratch area includes:

[0076] Obtaining edge roughness parameters of the scratch area;

[0077] Generate a scratch edge profile curve using the edge roughness parameter;

[0078] A three-dimensional scratch model is constructed according to the scratch edge contour curve.

[0079] Exemplarily, the edge roughness parameters are processed by spline interpolation method to obtain the scratch edge contour curve, and the scratch edge contour curve is constructed by non-uniform rational B-spline surface to construct a three-dimensional scratch model.

[0080] It is understandable that the construction of the three-dimensional scratch model sample adopts a similar method, which will not be described in detail here.

[0081] In an optional embodiment, acquiring the temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram includes:

[0082] According to the electric field distribution diagram, a first region is acquired, where the first region is a region where the degree of electric field distortion is greater than a preset degree of electric field distortion;

[0083] According to the position of the first area on the device to be detected, a temperature rise detection area of ​​the device to be detected is obtained.

[0084] In an embodiment of the present application, an area in the electric field distribution diagram where the degree of electric field distortion is greater than a preset degree of electric field distortion is taken as the first area, and an area of ​​the first area corresponding to the device to be detected is taken as a temperature rise detection area of ​​the device to be detected, in preparation for temperature rise detection.

[0085] In an optional embodiment, performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device includes:

[0086] Performing temperature rise detection on the temperature rise detection area to obtain a second area, where the second area is an area that meets a preset temperature rise condition;

[0087] The second area is positioned as a leakage fault area.

[0088] In the embodiment of the present application, by performing temperature rise detection on the temperature rise detection area, the area in the temperature rise detection area that meets the preset temperature rise conditions is located as the leakage fault area, thereby achieving accurate positioning of the leakage area of ​​the metal casing of the equipment.

[0089] In an optional embodiment, performing temperature rise detection on the temperature rise detection area to obtain the second area includes:

[0090] Obtaining a thermal image of the temperature rise detection area by means of an infrared thermal imager;

[0091] Convert the thermal image into a grayscale image and preprocess the grayscale image;

[0092] According to a preset mapping relationship between grayscale value and temperature, a temperature value of each pixel in the grayscale image is obtained;

[0093] According to the plurality of temperature values, obtaining temperature rise information of the temperature rise detection area;

[0094] A second region is obtained according to the temperature rise information, where the second region is a region that meets a preset temperature rise condition.

[0095] In an embodiment of the present application, a mapping relationship between grayscale value and temperature is pre-set. Through this mapping relationship, the temperature value of each pixel in the grayscale image can be obtained, and then the temperature rise information of the temperature rise detection area can be calculated to obtain the area that meets the preset temperature rise conditions through the temperature rise information.

[0096] In an optional embodiment, the preset temperature rise condition includes at least one of the following:

[0097] The temperature rise rate is greater than the preset temperature rise rate;

[0098] The temperature rise duration is greater than the preset temperature rise duration;

[0099] The temperature rise is greater than the preset temperature rise.

[0100] A method for locating a leakage fault provided in an embodiment of the present application comprises the following steps: obtaining an image of a shell of a device to be detected, extracting a scratch area of ​​the shell image; constructing a three-dimensional scratch model based on the scratch area; inputting the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion; obtaining a temperature rise detection area of ​​the device to be detected based on the electric field distribution map; performing a temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device; wherein the electric field distribution model is trained by a scratch area sample and a corresponding electric field distribution map used to characterize the degree of electric field distortion. It can be seen that the embodiment of the present application realizes the precise positioning of the leakage area of ​​the metal shell of the device by combining the degree of electric field distortion and the temperature rise change of the device, thereby providing data support for equipment maintenance decisions.

[0101] See also Figure 2 , Figure 2 : is a structural block diagram of a leakage fault location system 10 provided in an embodiment of the present application, and the leakage fault location system 10 includes:

[0102] A first acquisition module 11 is used to acquire a shell image of the device to be detected and extract a scratch area of ​​the shell image;

[0103] A construction module 12, used to construct a three-dimensional scratch model according to the scratch area;

[0104] A second acquisition module 13 is used to input the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion;

[0105] A third acquisition module 14 is used to acquire a temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram;

[0106] A fault location module 15 is used to perform temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device;

[0107] The electric field distribution model is obtained by training with scratch area samples and corresponding electric field distribution maps for characterizing the degree of electric field distortion.

[0108] Optionally, the leakage fault location system 10 further includes: a model training module, which is used to:

[0109] Acquire a shell image sample, and extract a scratch area sample of the shell image sample;

[0110] constructing a three-dimensional scratch model sample of the scratch area sample;

[0111] Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram;

[0112] Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion;

[0113] The electric field distribution model is obtained by training according to the scratch area sample, the electric field distribution map and the electric field distortion degree.

[0114] Optionally, performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram includes:

[0115] Simulation boundary conditions and material properties are set, a potential difference is applied to the three-dimensional scratch model sample, and an electric field distribution is obtained using a finite element method solver to form an electric field distribution diagram.

[0116] Optionally, constructing a three-dimensional scratch model according to the scratch area includes:

[0117] Obtaining edge roughness parameters of the scratch area;

[0118] Generate a scratch edge profile curve using the edge roughness parameter;

[0119] A three-dimensional scratch model is constructed according to the scratch edge contour curve.

[0120] Optionally, acquiring the temperature rise detection area of ​​the device to be detected according to the electric field distribution map includes:

[0121] According to the electric field distribution diagram, a first region is acquired, where the first region is a region where the degree of electric field distortion is greater than a preset degree of electric field distortion;

[0122] According to the position of the first area on the device to be detected, a temperature rise detection area of ​​the device to be detected is obtained.

[0123] Optionally, performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device includes:

[0124] Performing temperature rise detection on the temperature rise detection area to obtain a second area, where the second area is an area that meets a preset temperature rise condition;

[0125] The second area is positioned as a leakage fault area.

[0126] Optionally, performing temperature rise detection on the temperature rise detection area to obtain the second area includes:

[0127] Obtaining a thermal image of the temperature rise detection area by means of an infrared thermal imager;

[0128] Convert the thermal image into a grayscale image and preprocess the grayscale image;

[0129] According to a preset mapping relationship between grayscale value and temperature, a temperature value of each pixel in the grayscale image is obtained;

[0130] According to the plurality of temperature values, obtaining temperature rise information of the temperature rise detection area;

[0131] A second region is obtained according to the temperature rise information, where the second region is a region that meets a preset temperature rise condition.

[0132] Optionally, the preset temperature rise condition includes at least one of the following:

[0133] The temperature rise rate is greater than the preset temperature rise rate;

[0134] The temperature rise duration is greater than the preset temperature rise duration;

[0135] The temperature rise is greater than the preset temperature rise.

[0136] It is worth noting that the working process of each module in the leakage fault location system 10 described in the embodiment of the present application can refer to the working process of the leakage fault location method described in the above embodiment, and will not be repeated here.

[0137] A leakage fault location system 10 provided in an embodiment of the present application obtains a shell image of a device to be detected and extracts the scratch area of ​​the shell image; constructs a three-dimensional scratch model based on the scratch area; inputs the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, and the electric field distribution map is used to characterize the degree of electric field distortion; obtains the temperature rise detection area of ​​the device to be detected based on the electric field distribution map; performs temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device; wherein the electric field distribution model is trained by scratch area samples and the corresponding electric field distribution map used to characterize the degree of electric field distortion. It can be seen that the embodiment of the present application realizes the precise positioning of the leakage area of ​​the metal shell of the device by combining the degree of electric field distortion and temperature rise changes of the device, and provides data support for equipment maintenance decisions.

[0138] In addition, an embodiment of the present application further provides a computer-readable storage medium, which includes a stored computer program; wherein, when the computer program is running, it controls the device where the computer-readable storage medium is located to execute the leakage fault location method as described in any of the above embodiments.

[0139] In addition, an embodiment of the present application further provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the leakage fault location method as described in any of the above embodiments.

[0140] See also Figure 3 , Figure 3: is a structural block diagram of a leakage fault location device 20 provided in an embodiment of the present application, and the leakage fault location device 20 includes: a processor 21, a memory 22, and a computer program stored in the memory 22 and executable on the processor 21. When the processor 21 executes the computer program, the steps in the above leakage fault location method embodiment are implemented. Alternatively, when the processor 21 executes the computer program, the functions of each module / unit in the above device embodiments are implemented.

[0141] Exemplarily, the computer program may be divided into one or more modules / units, which are stored in the memory 22 and executed by the processor 21 to complete the present application. The one or more modules / units may be a series of computer program instruction segments capable of completing specific functions, which are used to describe the execution process of the computer program in the leakage fault locating device 20.

[0142] The leakage fault location device 20 may include, but is not limited to, a processor 21 and a memory 22. Those skilled in the art may understand that the schematic diagram is only an example of the leakage fault location device 20 and does not constitute a limitation on the leakage fault location device 20. The leakage fault location device 20 may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the leakage fault location device 20 may also include input and output devices, network access devices, buses, etc.

[0143] The processor 21 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc. The processor 21 is the control center of the leakage fault location device 20, and uses various interfaces and lines to connect various parts of the entire leakage fault location device 20.

[0144] The memory 22 can be used to store the computer program and / or module. The processor 21 realizes various functions of the leakage fault location device 20 by running or executing the computer program and / or module stored in the memory 22 and calling the data stored in the memory 22. The memory 22 can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, an application required for at least one function (such as a sound playback function, an image playback function, etc.), etc.; the data storage area can store data created according to the use of the mobile phone (such as audio data, a phone book, etc.), etc. In addition, the memory 22 can include a high-speed random access memory, and can also include a non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (SecureDigital, SD) card, a flash card (Flash Card), at least one disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0145] Wherein, if the module / unit integrated in the leakage fault location device 20 is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the present application implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor 21. Wherein, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium, etc.

[0146] It should be noted that the device embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. In addition, in the accompanying drawings of the device embodiments provided by the present application, the connection relationship between the modules indicates that there is a communication connection between them, which may be specifically implemented as one or more communication buses or signal lines. A person of ordinary skill in the art can understand and implement it without paying any creative work.

[0147] The above is a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.

Claims

1. A method for locating a leakage fault, characterized in that: include: Acquire a housing image of the device to be inspected, and extract a scratched area of ​​the housing image; constructing a three-dimensional scratch model according to the scratch area; Inputting the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion; Obtaining a temperature rise detection area of ​​the device to be detected according to the electric field distribution map; Performing temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device; The electric field distribution model is obtained by training the scratch area samples and the corresponding electric field distribution map used to characterize the degree of electric field distortion; The electric field distribution model is obtained by the following steps: Acquire a shell image sample, and extract a scratch area sample of the shell image sample; constructing a three-dimensional scratch model sample of the scratch area sample; Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution map; Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion; Performing training based on the scratch area sample, the electric field distribution map, and the degree of electric field distortion to obtain the electric field distribution model; The step of obtaining a temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram includes: Acquire a first region according to the electric field distribution map, where the first region is a region where the degree of electric field distortion is greater than a preset degree of electric field distortion; Obtaining a temperature rise detection area of ​​the device to be detected based on the position of the first area on the device to be detected; The performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device includes: Performing temperature rise detection on the temperature rise detection area to obtain a second area, where the second area is an area that meets a preset temperature rise condition; The second area is positioned as a leakage fault area.

2. The method for locating a leakage fault according to claim 1, wherein: The performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution diagram includes: Simulation boundary conditions and material properties are set, an electric potential difference is applied to the three-dimensional scratch model sample, and an electric field distribution is obtained using a finite element method solver to form an electric field distribution map.

3. The method for locating a leakage fault according to claim 1, wherein: The step of constructing a three-dimensional scratch model according to the scratch area includes: Obtaining edge roughness parameters of the scratch area; generating a scratch edge profile curve using the edge roughness parameter; A three-dimensional scratch model is constructed according to the scratch edge contour curve.

4. The method for locating a leakage fault according to claim 1, wherein: The performing temperature rise detection on the temperature rise detection area to obtain a second area includes: Obtaining a thermal image of the temperature rise detection area using an infrared thermal imager; Converting the thermal image into a grayscale image and preprocessing the grayscale image; Obtaining the temperature value of each pixel in the grayscale image according to a preset mapping relationship between grayscale value and temperature; Obtaining temperature rise information of the temperature rise detection area according to the plurality of temperature values; A second region is obtained according to the temperature rise information, where the second region is a region that meets a preset temperature rise condition.

5. The method for locating a leakage fault according to claim 4, wherein: The preset temperature rise condition includes at least one of the following: The temperature rise rate is greater than the preset temperature rise rate; The temperature rise duration is greater than the preset temperature rise duration; The temperature rise is greater than the preset temperature rise.

6. A leakage fault location system, characterized in that: include: A first acquisition module is used to acquire a housing image of the device to be detected and extract a scratch area of ​​the housing image; A construction module, configured to construct a three-dimensional scratch model according to the scratch area; a second acquisition module, configured to input the three-dimensional scratch model into a preset electric field distribution model to obtain an electric field distribution map, wherein the electric field distribution map is used to characterize the degree of electric field distortion; A third acquisition module is used to obtain a temperature rise detection area of ​​the device to be detected according to the electric field distribution map; a fault location module, configured to perform temperature rise detection on the temperature rise detection area to obtain a leakage fault area of ​​the device; The electric field distribution model is obtained by training the scratch area samples and the corresponding electric field distribution map used to characterize the degree of electric field distortion; The leakage fault location system further includes a model training module for: Acquire a shell image sample, and extract a scratch area sample of the shell image sample; constructing a three-dimensional scratch model sample of the scratch area sample; Performing electric field simulation on the three-dimensional scratch model sample to obtain an electric field distribution map; Calculating the electric field gradient of the electric field distribution diagram to obtain the degree of electric field distortion; Performing training based on the scratch area sample, the electric field distribution map, and the degree of electric field distortion to obtain the electric field distribution model; The step of obtaining a temperature rise detection area of ​​the device to be detected according to the electric field distribution diagram includes: Acquire a first region according to the electric field distribution map, where the first region is a region where the degree of electric field distortion is greater than a preset degree of electric field distortion; Obtaining a temperature rise detection area of ​​the device to be detected based on the position of the first area on the device to be detected; The performing temperature rise detection on the temperature rise detection area to obtain the leakage fault area of ​​the device includes: Performing temperature rise detection on the temperature rise detection area to obtain a second area, where the second area is an area that meets a preset temperature rise condition; The second area is positioned as a leakage fault area.

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