A SPADs image sensor based on glass substrate and manufacturing method thereof

Abstract

The present application belongs to the field of semiconductor process technology, and discloses a SPADs image sensor based on a glass substrate and a manufacturing method thereof, wherein the image sensor comprises: a glass substrate, a silicon oxide layer, an aluminum oxide layer, a P-type heavily doped gallium arsenide layer, an intrinsic gallium arsenide visible light sensing layer, an intrinsic germanium system short-wave infrared sensing layer, a P-type charge layer, a multi-avalanche layer, an N-type heavily doped germanium layer and a passivation layer stacked in sequence; and a plurality of rectangular grooves of the same shape and distributed at preset intervals; the rectangular grooves sequentially penetrate the N-type heavily doped germanium layer, the multi-avalanche layer, the P-type charge layer, the intrinsic germanium system short-wave infrared sensing layer and the intrinsic gallium arsenide visible light sensing layer; the passivation layer uniformly covers the N-type heavily doped germanium layer and the inner wall of each rectangular groove. The present application can expand the spectral response range of the SPADs image sensor to 390nm-1700nm.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process technology, and in particular to a SPADs image sensor based on a glass substrate and a manufacturing method thereof. Background Art

[0002] Single Photon Avalanche Photodetectors (SPADs) are highly sensitive devices that can detect the energy of a single photon. SPADs image sensors in the short-wave infrared band play an important role in many emerging applications such as optical communications, quantum information, ranging, coherent sensing, medical diagnosis, analytical instruments, laser radar (LIDAR), life sciences and over-the-horizon imaging.

[0003] The existing technologies are all silicon-based germanium SPADs image sensors. Due to the large lattice mismatch and thermal mismatch between silicon and germanium, the germanium SPADs image sensors formed directly on the silicon substrate have extremely high current and dark count rates, resulting in increased noise, decreased accuracy and sensitivity, increased energy consumption and other problems. Secondly, limited by the energy band structure of the silicon substrate material (the band gap of silicon is 1.12eV, the corresponding wavelength is 1100nm, and the light signals in the visible light band are all absorbed by the silicon substrate), the silicon-based germanium SPADs image sensors have no response characteristics in the visible light band of 390-780nm, resulting in the spectral response range of the silicon-based germanium SPADs image sensors being only 1100-1700 nm, which to a certain extent limits the application scenarios of the germanium SPADs image sensors. Summary of the invention

[0004] The present application provides a SPADs image sensor based on a glass substrate and a manufacturing method thereof, which can expand the spectral response range of the SPADs image sensor to 390nm-1700nm, ensure the transmission and transmission of visible light and short-wave infrared radiation, and improve the sensitivity and applicability of the SPADs image sensor.

[0005] In a first aspect, the present application provides a SPADs image sensor based on a glass substrate, comprising:

[0006] N-type electrode, P-type electrode and readout circuit; and a glass substrate, a silicon oxide layer, an aluminum oxide layer, a P-type heavily doped gallium arsenide layer, an intrinsic gallium arsenide visible light sensing layer, an intrinsic germanium system short-wave infrared sensing layer, a P-type charge layer, a multi-avalanche layer, an N-type heavily doped germanium layer and a passivation layer stacked in sequence; and a plurality of rectangular grooves of the same shape and distributed at preset intervals;

[0007] The rectangular groove sequentially penetrates the N-type heavily doped germanium layer, the multi-avalanche layer, the P-type charge layer, the intrinsic germanium system short-wave infrared sensing layer and the intrinsic gallium arsenide visible light sensing layer;

[0008] The passivation layer uniformly covers the N-type heavily doped germanium layer and the inner walls of each rectangular groove;

[0009] The N-type electrode is disposed at the bottom of the rectangular groove and passes through the passivation layer to connect to the P-type heavily doped gallium arsenide layer;

[0010] The P-type electrode passes through the passivation layer and connects to the N-type heavily doped germanium layer;

[0011] The readout circuit is connected to the N-type electrode and the P-type electrode respectively.

[0012] Furthermore, the thickness of the multi-avalanche layer is between 0.1um and 3um.

[0013] Furthermore, the multiple avalanche layers are germanium avalanche layers, germanium superlattice avalanche layers, germanium silicon superlattice avalanche layers, germanium quantum well avalanche layers or germanium silicon quantum well avalanche layers.

[0014] Furthermore, when the multi-avalanche layer is a germanium-silicon superlattice avalanche layer, the germanium content of the germanium-silicon superlattice avalanche layer is 0-30%.

[0015] Furthermore, the number of periods of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is 60-400, and the thickness of a single period ranges from 8-40 nm.

[0016] Furthermore, the barrier layer thickness of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is in the range of 3-10 nm, and the well layer thickness is in the range of 5-30 nm.

[0017] Furthermore, the number of periods of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is 10-300, and the thickness of a single period is greater than 15 nm.

[0018] Furthermore, the barrier layer thickness of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is greater than 10 nm, and the potential well layer thickness ranges from 5 to 30 nm.

[0019] Furthermore, the thickness of the P-type charge layer is 100 nm; the thickness of the intrinsic gallium arsenide visible light sensing layer is in the range of 500-1400 nm; and the thickness of the intrinsic germanium short-wave infrared sensing layer is in the range of 0.1-3 um.

[0020] Furthermore, the glass substrate is replaced with a sapphire substrate.

[0021] In a second aspect, the present application provides a method for manufacturing a SPADs image sensor based on a glass substrate, comprising:

[0022] Providing a silicon substrate with a 6-degree bevel cut;

[0023] An intrinsic germanium buffer layer, an intrinsic germanium layer, a multi-avalanche layer, a P-type charge layer, an intrinsic germanium system short-wave infrared sensing layer, an intrinsic gallium arsenide visible light sensing layer, a P-type heavily doped gallium arsenide layer and an aluminum oxide layer are sequentially stacked on a silicon substrate to obtain a donor substrate;

[0024] Providing a glass substrate; stacking a silicon oxide layer on the glass substrate to obtain an acceptor substrate;

[0025] bonding the donor substrate and the acceptor substrate wafers, and removing the silicon substrate and the intrinsic germanium buffer layer;

[0026] Ion implantation is performed on the intrinsic germanium layer to form an N-type heavily doped germanium layer to obtain a sensor wafer;

[0027] A plurality of rectangular grooves having the same shape and distributed at preset intervals are arranged on the sensor wafer;

[0028] The rectangular groove sequentially penetrates the N-type heavily doped germanium layer, the multi-avalanche layer, the P-type charge layer, the intrinsic germanium short-wave infrared sensing layer and the intrinsic gallium arsenide visible light sensing layer;

[0029] The passivation layer is evenly covered on the N-type heavily doped germanium layer and the inner wall of each rectangular groove;

[0030] An N-type electrode and a P-type electrode are provided, and the N-type electrode and the P-type electrode are connected to a readout circuit.

[0031] Furthermore, the thickness of the intrinsic germanium buffer layer is between 100 nm and 500 nm.

[0032] Furthermore, the thickness of the intrinsic germanium layer is between 100 nm and 500 nm.

[0033] Furthermore, the silicon substrate is removed by mechanical polishing or dry etching.

[0034] Furthermore, the intrinsic germanium buffer layer is removed by using a tetramethylammonium hydroxide-based wet etching method combined with chemical mechanical polishing.

[0035] In summary, compared with the prior art, the technical solution provided in the embodiment of the present application has at least the following beneficial effects:

[0036] The embodiment of the present application provides a SPADs image sensor based on a glass substrate. First, the substrate used in the present application is a glass substrate instead of a silicon substrate. The glass substrate has good light transmittance in both the visible light band and the short-wave infrared band. Combined with the intrinsic gallium arsenide visible light sensing layer and the intrinsic germanium short-wave infrared sensing layer stacked on the glass substrate, the spectral response range of the SPADs image sensor can be extended to 390nm-1700nm, ensuring the transmission and transmission of visible light and short-wave infrared radiation, and improving the sensitivity and applicability of the SPADs image sensor; secondly, the glass substrate is a good insulator, which can effectively isolate the current between the SPADs image sensor and the surrounding environment, reducing the dark current and dark count rate of the SPADs image sensor; in addition, due to the large lattice mismatch between silicon and germanium, the present application adopts a gallium arsenide layer that matches the germanium lattice as the visible light sensing layer, avoiding the introduction of mismatch defects in the entire device stacking structure, and further avoiding the problems of high dark current and high dark count rate. Finally, the glass substrate has excellent chemical stability, corrosion resistance and oxidation resistance, which can improve the stability and reliability of SPADs image sensors. Compared with the silicon substrate used in conventional SPADs image sensors, the glass substrate has a lower material cost, which helps to reduce the manufacturing cost of visible light-short-wave infrared SPADs image sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A structural diagram of a SPADs image sensor based on a glass substrate provided as an exemplary embodiment of the present application.

[0038] Figure 2 A flowchart of a method for manufacturing a SPADs image sensor based on a glass substrate is provided for an exemplary embodiment of the present application.

[0039] Figure 3 A schematic structural diagram of a donor substrate provided for an exemplary embodiment of the present application.

[0040] Figure 4 A schematic diagram of wafer bonding operation is provided for an exemplary embodiment of the present application.

[0041] Figure 5 A schematic diagram of the structure of a sensor wafer after ion implantation provided by an exemplary embodiment of the present application.

[0042] Figure 6 A schematic diagram of a sensor structure after a rectangular groove is provided according to an exemplary embodiment of the present application.

[0043] Figure 7 A schematic diagram of the structure after N-type electrodes and P-type electrodes are provided for an exemplary embodiment of the present application.

[0044] Description of reference numerals:

[0045] 001, silicon substrate; 002, intrinsic germanium buffer layer; 003, intrinsic germanium layer; 101, glass substrate; 102, silicon oxide layer; 103, aluminum oxide layer; 104, P-type heavily doped gallium arsenide layer; 105, intrinsic gallium arsenide visible light sensing layer; 106, intrinsic germanium short-wave infrared sensing layer; 107, P-type charge layer; 108, multi-avalanche layer; 109, N-type heavily doped germanium layer; 201, passivation layer; 202, N-type electrode; 203, P-type electrode; 204, readout circuit. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0047] Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of this application.

[0048] See also Figure 1 The embodiment of the present application provides a SPADs image sensor based on a glass substrate 101, including:

[0049] N-type electrode 202, P-type electrode 203 and readout circuit 204; and a glass substrate 101, a silicon oxide layer 102, an aluminum oxide layer 103, a P-type heavily doped gallium arsenide layer 104, an intrinsic gallium arsenide visible light sensing layer 105, an intrinsic germanium short-wave infrared sensing layer 106, a P-type charge layer 107, a multi-avalanche layer 108, an N-type heavily doped germanium layer 109 and a passivation layer 201 stacked in sequence; and a plurality of rectangular grooves of the same shape distributed at preset intervals.

[0050] The rectangular groove sequentially penetrates the N-type heavily doped germanium layer 109 , the multi-avalanche layer 108 , the P-type charge layer 107 , the intrinsic germanium system short-wave infrared sensing layer 106 , and the intrinsic gallium arsenide visible light sensing layer 105 .

[0051] The passivation layer 201 uniformly covers the N-type heavily doped germanium layer 109 and the inner walls of each rectangular groove.

[0052] The N-type electrode 202 is disposed at the bottom of the rectangular groove, and passes through the passivation layer 201 to connect to the P-type heavily doped GaAs layer 104 .

[0053] The P-type electrode 203 passes through the passivation layer 201 and connects to the N-type heavily doped germanium layer 109 .

[0054] The readout circuit 204 is connected to the N-type electrode 202 and the P-type electrode 203 , respectively.

[0055] The intrinsic gallium arsenide visible light sensing layer 105 can capture visible light with a spectral wavelength between 390-780 nm, and the intrinsic germanium short-wave infrared sensing layer 106 can capture short-wave infrared light with a wavelength between 780 nm and 1700 nm.

[0056] The thickness of the intrinsic gallium arsenide visible light sensing layer 105 is between 500nm and 1400nm; the thickness of the intrinsic germanium short-wave infrared sensing layer 106 is between 0.1um and 3um.

[0057] The thickness of the P-type charge layer 107 is 100 nm, and may be a P-type germanium charge layer or a P-type germanium silicon charge layer.

[0058] like Figure 1 As shown, the rectangular groove in the image sensor penetrates from the N-type heavily doped germanium layer 109 to the intrinsic gallium arsenide visible light sensing layer 105 until the P-type heavily doped gallium arsenide layer 104 under the intrinsic gallium arsenide visible light sensing layer 105 is exposed.

[0059] The above embodiment provides a SPADs image sensor based on a glass substrate 101. First, the substrate used in this application is a glass substrate 101 instead of a silicon substrate. The glass substrate 101 has good light transmittance in both the visible light band and the short-wave infrared band. Combined with the intrinsic gallium arsenide visible light sensing layer 105 and the intrinsic germanium short-wave infrared sensing layer 106 stacked on the glass substrate 101, the spectral response range of the SPADs image sensor can be expanded to 390nm-1700nm, ensuring the transmission and transmission of visible light and short-wave infrared radiation, thereby improving the sensitivity and applicability of the SPADs image sensor.

[0060] Secondly, the glass substrate 101 is a good insulator that can effectively isolate the current between the SPADs image sensor and the surrounding environment, reducing the dark current and dark count rate of the SPADs image sensor; in addition, due to the large lattice mismatch between silicon and germanium, the present application uses a gallium arsenide layer that matches the germanium lattice as a visible light sensing layer, avoiding the introduction of mismatch defects in the entire device stacking structure, and further avoiding the problems of high dark current and high dark count rate. Finally, the glass substrate 101 has excellent chemical stability, corrosion resistance, and oxidation resistance, which can improve the stability and reliability of the SPADs image sensor; and the glass substrate 101 has a lower material cost than the silicon substrate 001 used in conventional SPADs image sensors, which helps to reduce the manufacturing cost of visible light-short-wave infrared SPADs image sensors.

[0061] In some embodiments, the thickness of the multi-avalanche layer 108 is between 0.1 um and 3 um.

[0062] The multi-avalanche layer 108 may be a germanium avalanche layer, a germanium superlattice avalanche layer, a germanium silicon superlattice avalanche layer, a germanium quantum well avalanche layer, or a germanium silicon quantum well avalanche layer. When the multi-avalanche layer 108 is a germanium silicon superlattice avalanche layer, the germanium content of the germanium silicon superlattice avalanche layer is between 0 and 30%. Specifically, when the composition is within the range of 0-30%, the lattices of the germanium layer and the germanium silicon layer are relatively matched, and it is easy to form a high-quality multi-avalanche layer 108.

[0063] The number of periods of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is between 60 and 400, and the thickness of a single period is between 8nm and 40nm; the thickness of the barrier layer of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is between 3nm and 10nm, and the thickness of the potential well layer is between 5nm and 30nm.

[0064] When the multi-avalanche layer 108 adopts the structure of a germanium quantum well avalanche layer or a germanium silicon quantum well avalanche layer, the number of periods of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is between 10 and 300, and the thickness of a single period is greater than 15nm; the barrier layer thickness of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is greater than 10nm, and the potential well layer thickness is between 5nm and 30nm.

[0065] In some embodiments, the glass substrate 101 may also be replaced by a sapphire substrate, which can also achieve the effect of covering the spectral range from visible light to short-wave infrared, that is, 390nm-1700nm.

[0066] See also Figure 2 Another embodiment of the present application provides a method for manufacturing a SPADs image sensor based on a glass substrate 101, which may specifically include the following steps:

[0067] Step S1, providing a silicon substrate 001 with a 6-degree bevel.

[0068] Step S2, stacking an intrinsic germanium buffer layer 002, an intrinsic germanium layer 003, a multi-avalanche layer 108, a P-type charge layer 107, an intrinsic germanium short-wave infrared sensing layer 106, an intrinsic gallium arsenide visible light sensing layer 105, a P-type heavily doped gallium arsenide layer 104 and an aluminum oxide layer 103 in sequence on a silicon substrate 001 to obtain a donor substrate.

[0069] The thickness of the intrinsic germanium buffer layer 002 and the intrinsic germanium layer 003 are both between 100 nm and 500 nm.

[0070] Specifically, see Figure 3The reason for using the 6-degree beveled silicon substrate 001 is that there is a polarity mismatch between silicon, germanium and gallium arsenide. Using the 6-degree beveled silicon substrate 001 can solve the polarity mismatch problem between the intrinsic germanium short-wave infrared sensing layer 106 and the intrinsic gallium arsenide visible light sensing layer 105, which is beneficial to forming a germanium / gallium arsenide interface with excellent interface quality.

[0071] Furthermore, when a 6-degree beveled silicon substrate 001 is used as the base, the intrinsic germanium buffer layer 002 , the intrinsic germanium layer 003 , the multi-avalanche layer 108 , and the intrinsic germanium short-wave infrared sensing layer 106 stacked thereon are all beveled at 6 degrees.

[0072] Step S3, providing a glass substrate 101; stacking a silicon oxide layer 102 on the glass substrate 101 to obtain a receptor substrate.

[0073] See also Figure 4 , the glass substrate 101 can be replaced by a sapphire substrate.

[0074] Step S4, bonding the donor substrate and the acceptor substrate wafers, and removing the silicon substrate 001 and the intrinsic germanium buffer layer 002.

[0075] Step S5 , performing ion implantation on the intrinsic germanium layer 003 to form an N-type heavily doped germanium layer 109 , thereby obtaining a sensor wafer.

[0076] See also Figure 5 Specifically, the silicon substrate 001 can be removed by mechanical grinding or dry etching, and the intrinsic germanium buffer layer 002 with high defect density can be removed by combining TMAH and CMP (chemical mechanical polishing) to obtain a visible light-short wave infrared SPADs image sensor wafer on the glass substrate 101. Among them, TMAH (tetramethylammonium hydroxide) is mainly used as an anisotropic wet etchant in semiconductor manufacturing processes.

[0077] Step S6, providing a plurality of rectangular grooves of the same shape and distributed at preset intervals on the sensor wafer.

[0078] The rectangular groove sequentially penetrates the N-type heavily doped germanium layer 109 , the multi-avalanche layer 108 , the P-type charge layer 107 , the intrinsic germanium short-wave infrared sensing layer 106 , and the intrinsic gallium arsenide visible light sensing layer 105 .

[0079] Specifically, see Figure 6 The rectangular groove penetrates from the N-type heavily doped germanium layer 109 to the intrinsic gallium arsenide visible light sensing layer 105 until the P-type heavily doped gallium arsenide layer 104 under the intrinsic gallium arsenide visible light sensing layer 105 is exposed.

[0080] Step S7 , uniformly covering the N-type heavily doped germanium layer 109 and the inner walls of each rectangular groove with a passivation layer 201 .

[0081] Step S8, setting the N-type electrode 202 and the P-type electrode 203, and connecting the N-type electrode 202 and the P-type electrode 203 to the readout circuit 204. Figure 7 The N-type electrode 202 is arranged at the bottom of the rectangular groove, passing through the passivation layer 201 to connect to the P-type heavily doped gallium arsenide layer 104; the P-type electrode 203 passes through the passivation layer 201 to connect to the N-type heavily doped germanium layer 109. The readout circuit 204 is bonded to the visible light-short wave infrared SPADs focal plane array chip on the glass substrate 101 by In bump bonding or Cu bump bonding using flip-chip technology.

[0082] The above embodiment provides a method for manufacturing a SPADs image sensor based on a glass substrate 101. The donor substrate formed on the glass substrate 101 can expand the spectral response range of the SPADs image sensor to 390nm-1700nm, ensuring the transmission and transmission of visible light and short-wave infrared radiation, and improving the sensitivity and applicability of the SPADs image sensor.

[0083] Although silicon is also a good visible light sensing layer, there is a large lattice mismatch between silicon and germanium. Therefore, the present application uses a gallium arsenide layer that matches the germanium lattice as a visible light sensing layer, avoiding the introduction of mismatch defects in the entire device stacking structure, and effectively avoiding the problems of high dark current and high dark count rate. In addition, the present application also makes full use of the insulating properties of the glass substrate 101 itself, and uses wafer bonding to form a SPADs image sensor, which can remove a large number of defects at the germanium / silicon interface, further reducing the dark current and dark count rate of the SPADs image sensor.

[0084] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A SPADs image sensor based on a glass substrate, characterized in that: include: N-type electrode, P-type electrode and readout circuit; and a glass substrate, a silicon oxide layer, an aluminum oxide layer, a P-type heavily doped gallium arsenide layer, an intrinsic gallium arsenide visible light sensing layer, an intrinsic germanium system short-wave infrared sensing layer, a P-type charge layer, a multi-avalanche layer, an N-type heavily doped germanium layer and a passivation layer stacked in sequence; and a plurality of rectangular grooves of the same shape and distributed at preset intervals; the multi-avalanche layer is a germanium avalanche layer, a germanium superlattice avalanche layer, a germanium silicon superlattice avalanche layer, a germanium quantum well avalanche layer or a germanium silicon quantum well avalanche layer; The rectangular groove sequentially penetrates the N-type heavily doped germanium layer, the multi-avalanche layer, the P-type charge layer, the intrinsic germanium system short-wave infrared sensing layer and the intrinsic gallium arsenide visible light sensing layer; The passivation layer uniformly covers the N-type heavily doped germanium layer and the inner wall of each of the rectangular grooves; The N-type electrode is disposed at the bottom of the rectangular groove, passing through the passivation layer and connected to the P-type heavily doped gallium arsenide layer; The P-type electrode passes through the passivation layer and connects to the N-type heavily doped germanium layer; The readout circuit is connected to the N-type electrode and the P-type electrode respectively.

2. The SPADs image sensor based on a glass substrate according to claim 1, characterized in that: The thickness of the multi-avalanche layer is between 0.1um and 3um.

3. The SPADs image sensor based on a glass substrate according to claim 2, characterized in that: When the multi-avalanche layer is the germanium-silicon superlattice avalanche layer, the germanium content of the germanium-silicon superlattice avalanche layer is 0-30%.

4. The SPADs image sensor based on a glass substrate according to claim 3, characterized in that: The number of periods of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is 60-400, and the thickness of a single period ranges from 8-40 nm.

5. The SPADs image sensor based on a glass substrate according to claim 4, characterized in that: The barrier layer thickness of the germanium superlattice avalanche layer or the germanium silicon superlattice avalanche layer is in the range of 3-10 nm, and the potential well layer thickness is in the range of 5-30 nm.

6. The SPADs image sensor based on a glass substrate according to claim 5, characterized in that: The number of periods of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is 10-300, and the thickness of a single period is greater than 15 nm.

7. The SPADs image sensor based on a glass substrate according to claim 6, characterized in that: The barrier layer thickness of the germanium quantum well avalanche layer or the germanium silicon quantum well avalanche layer is greater than 10 nm, and the potential well layer thickness ranges from 5 to 30 nm.

8. The SPADs image sensor based on a glass substrate according to claim 1, characterized in that: The thickness of the P-type charge layer is 100 nm; the thickness of the intrinsic gallium arsenide visible light sensing layer is in the range of 500-1400 nm; and the thickness of the intrinsic germanium short-wave infrared sensing layer is in the range of 0.1-3 um.

9. The SPADs image sensor based on a glass substrate according to claim 1, characterized in that: The glass substrate is replaced with a sapphire substrate.

10. A method for manufacturing a SPADs image sensor based on a glass substrate, characterized in that: include: Providing a silicon substrate with a 6-degree bevel cut; An intrinsic germanium buffer layer, an intrinsic germanium layer, a multi-avalanche layer, a P-type charge layer, an intrinsic germanium system short-wave infrared sensing layer, an intrinsic gallium arsenide visible light sensing layer, a P-type heavily doped gallium arsenide layer and an aluminum oxide layer are sequentially stacked on the silicon substrate to obtain a donor substrate; wherein the multi-avalanche layer is a germanium avalanche layer, a germanium superlattice avalanche layer, a germanium silicon superlattice avalanche layer, a germanium quantum well avalanche layer or a germanium silicon quantum well avalanche layer; Providing a glass substrate; stacking a silicon oxide layer on the glass substrate to obtain an acceptor substrate; Wafer bonding the donor substrate and the acceptor substrate, and removing the silicon substrate and the intrinsic germanium buffer layer; Performing ion implantation on the intrinsic germanium layer to form an N-type heavily doped germanium layer to obtain a sensor wafer; Arranging a plurality of rectangular grooves of the same shape and distributed at preset intervals on the sensor wafer; The rectangular groove sequentially penetrates the N-type heavily doped germanium layer, the multi-avalanche layer, the P-type charge layer, the intrinsic germanium short-wave infrared sensing layer and the intrinsic gallium arsenide visible light sensing layer; Uniformly covering the N-type heavily doped germanium layer and the inner wall of each of the rectangular grooves with a passivation layer; An N-type electrode and a P-type electrode are provided, and the N-type electrode and the P-type electrode are connected to a readout circuit.

11. The method for manufacturing a SPADs image sensor based on a glass substrate according to claim 10, characterized in that: The thickness of the intrinsic germanium buffer layer is between 100 nm and 500 nm.

12. The method for manufacturing a SPADs image sensor based on a glass substrate according to claim 10, characterized in that: The thickness of the intrinsic germanium layer is between 100 nm and 500 nm.

13. The method for manufacturing a SPADs image sensor based on a glass substrate according to claim 10, characterized in that: The silicon substrate is removed by mechanical polishing or dry etching.

14. The method for manufacturing a SPADs image sensor based on a glass substrate according to claim 10, characterized in that: The intrinsic germanium buffer layer is removed by a combination of tetramethylammonium hydroxide-based wet etching and chemical mechanical polishing.

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