A 360-degree terahertz phase shifter, phased array radar and communication device

Abstract

The invention discloses a 360-degree terahertz phase shifter, a phased array radar and a communication device, belonging to the technical field of communication and radar. The 360-degree terahertz phase shifter comprises a 90-degree phase shifter, an output end of which is cascaded with a first 90-degree phase shift coupling unit, a 180-degree phase shift coupling unit and a second 90-degree phase shift coupling unit; the 90-degree phase shifter comprises a primary phase module and a secondary phase module connected in series; the primary phase module and the secondary phase module both comprise two path selection switches with the same structure, and the two path selection switches are connected through a multi-section transmission line; the phase selection path of the path selection switch of the primary phase module is smaller than the phase selection path of the path selection switch of the secondary phase module; the 360-degree terahertz phase shifter uses a phase shift accuracy desensitization method based on a high-isolation time-delay switching technology to reduce the deterioration effect of parasitic parameter changes in different phase shift states on the phase shift accuracy, thereby improving the phase shift accuracy of the terahertz phase shifter.

Description

Technical Field

[0001] The present invention relates to the technical field of communication and radar, and in particular to a 360-degree terahertz phase shifter, a phased array radar and a communication device. Background Art

[0002] The terahertz phase shifter is the core component of the terahertz phased array radar. Its phase shifting accuracy restricts the performance of the radar system. The insertion loss of the terahertz phase shifter limits the sensitivity and detection distance of the radar system, and the phase shifting accuracy directly determines the key performance indicators of the radar system, such as the beam pointing error and sidelobe suppression ratio.

[0003] The improvement of the phase shift accuracy of CMOS (Complementary Metal Oxide Semiconductor) terahertz phase shifters is mainly limited by the parasitic parameters of active CMOS devices. When the terahertz phase shifter switches between phase shift states, the parasitic parameters of the CMOS devices will also change. The influence of the load effect causes the phase shift value to deviate from the ideal phase shift value, deteriorating the phase shift accuracy. Reducing parasitic parameters can improve the phase shift accuracy of BiCMOS phase shifters in the sub-terahertz frequency band to a certain extent. The latest research results can achieve a phase shift accuracy of five bits. However, compared with the BiCMOS (Bipolar-CMOS) process, the CMOS process has a smaller transconductance current ratio. When taking into account the insertion loss performance, the parasitic parameters of CMOS terahertz high-precision phase shifters have a larger range of variation in different phase shift states, and the phase shift accuracy is more sensitive to parasitic effects. Therefore, the improvement of phase shift accuracy faces more severe challenges. Summary of the invention

[0004] In view of the problems existing in the prior art, the present invention provides a 360-degree terahertz phase shifter, a phased array radar and a communication device, and a phase shift accuracy desensitization method based on a high-isolation time-delay switching technology, which reduces the deterioration effect of parasitic parameter changes in different phase shift states on the phase shift accuracy and improves the phase shift accuracy of the terahertz phase shifter.

[0005] The present invention is achieved through the following technical solutions:

[0006] In a first aspect, the present application provides a 360-degree terahertz phase shifter, comprising a 90-degree phase shifter, wherein the output end of the 90-degree phase shifter is cascaded with a first 90-degree phase shift coupling unit, a 180-degree phase shift coupling unit, and a second 90-degree phase shift coupling unit;

[0007] The 90-degree phase shifter comprises a primary phase module and a secondary phase module connected in series;

[0008] The primary phase module and the secondary phase module each include two path selection switches with the same structure, and the two path selection switches are connected through a multi-section transmission line; the phase selection path of the path selection switch of the primary phase module is smaller than the phase selection path of the path selection switch of the secondary phase module.

[0009] Preferably, the first 90-degree phase-shift coupling unit and the second 90-degree phase-shift coupling unit both include a 90-degree coupler and a single-pole double-throw switch SPDT connected thereto.

[0010] Preferably, the first 90-degree phase-shift coupling unit comprises a first 90-degree coupler and a first single-pole double-throw switch SPDT;

[0011] The input end of the first 90-degree coupler is connected to the output end of the 90-degree phase shifter, the output end of the first 90-degree coupler is connected to the first single-pole double-throw switch SPDT, and the first single-pole double-throw switch SPDT is connected to the 180-degree phase shift coupling unit;

[0012] The second 90-degree phase-shift coupling unit includes a second 90-degree coupler and a second single-pole double-throw switch SPDT;

[0013] The input end of the second 90-degree coupler is connected to the output end of the 180-degree phase-shift coupling unit, and the output end of the second 90-degree coupler is connected to the second single-pole double-throw switch SPDT.

[0014] Preferably, an active amplifier is provided between the 90-degree phase shifter and the first 90-degree phase-shift coupling unit, or / and the output end of the second 90-degree phase-shift coupling unit is connected to the active amplifier.

[0015] Preferably, the path selection switch comprises a plurality of transmission lines, the input ends of the plurality of transmission lines are connected to form a common node, and the output end of each transmission line is connected to a transistor and an impedance converter in sequence; the substrate of the transistor is grounded through a first resistor, and the control end of the transistor is connected to a second resistor;

[0016] During the transmission process, the radio frequency signal is transmitted along the transmission line corresponding to the low level at the control end of the transistor.

[0017] Preferably, the gate of the transistor is the control terminal, the gate is connected to the second resistor, the source is grounded, the substrate is grounded through the first resistor, the drain is connected to the selection node of the transmission line, and the impedance converter is connected to the drain.

[0018] Preferably, the transmission line is wired in a reciprocating folding manner.

[0019] Preferably, the path selection switch of the primary phase module is a single-pole three-throw switch, and the path selection switch of the secondary phase module is a single-pole four-throw switch.

[0020] In a second aspect, the present application provides a terahertz phased array radar, including the 360-degree terahertz phase shifter.

[0021] In a third aspect, the present application provides a communication device, comprising the 360-degree terahertz phase shifter.

[0022] Compared with the prior art, the present invention has the following beneficial technical effects:

[0023] The present application provides a 360-degree terahertz phase shifter, which adopts a 90-degree phase shifter and a first 90-degree phase shift coupling unit to achieve a phase shift within a range of 90°, and adopts a cascaded 180-degree phase shift coupling unit and a second 90-degree phase shift coupling unit to achieve a phase shift within a range of 270°, so that the entire terahertz phase shifter covers a phase shift range of 360°; in addition, a high-isolation and low-insertion-loss path selection switch is adopted to reduce the change of parasitic parameters under different phase shift states, reduce the deterioration effect of the change of parasitic parameters under different phase shift states on the phase shift accuracy, improve the phase shift accuracy of the terahertz phase shifter, and break through the sensitivity of high-precision terahertz phase shifters to parasitic parameters; at the same time, the terahertz phase shifter has the advantages of low insertion loss and wide flatness, and the insertion loss and phase shift accuracy performance are improved; secondly, the 360-degree terahertz phase shifter weakens the coupling relationship between insertion loss and phase shift accuracy from the circuit solution level, realizes the coordinated optimization of insertion loss and phase shift accuracy of the 360-degree terahertz phase shifter, and obtains better insertion loss and phase shift accuracy performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 This is a structural diagram of the 360-degree terahertz phase shifter of the present invention;

[0026] Figure 2 It is a structural diagram of a single-pole triple-throw switch of the present invention;

[0027] Figure 3 It is a structural diagram of a single-pole four-throw switch of the present invention;

[0028] Figure 4 The relative phase shift value and phase shift accuracy diagram of the 360-degree terahertz phase shifter of the present invention;

[0029] Figure 5 The diagram is a phase shift mean square error and insertion loss mean square error diagram of the 360-degree terahertz phase shifter of the present invention.

[0030] In the figure: 1, 90 degree phase shifter; 2, first 90 degree phase shift coupling unit; 3, 180 degree phase shift coupling unit; 4, second 90 degree phase shift coupling unit. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0033] See also Figure 1 A 360-degree terahertz phase shifter comprises a 90-degree phase shifter 1, wherein the output end of the 90-degree phase shifter 1 is cascaded with a first 90-degree phase shift coupling unit 2, a 180-degree phase shift coupling unit 3 and a second 90-degree phase shift coupling unit 4;

[0034] The 90-degree phase shifter 1 comprises a primary phase module and a secondary phase module connected in series;

[0035] The primary phase module and the secondary phase module each include two path selection switches with the same structure, and the two path selection switches are connected through a multi-section transmission line; the phase selection path of the path selection switch of the primary phase module is smaller than the phase selection path of the path selection switch of the secondary phase module.

[0036] In the 360-degree terahertz phase shifter, the output end of the 90-degree phase shifter 1 is connected to the first 90-degree phase shift coupling unit 2 for achieving phase shifting within a range of 90°, and the cascaded 180-degree phase shift coupling unit 3 and the second 90-degree phase shift coupling unit 4 are used to achieve phase shifting within a range of 270°, so that the entire terahertz phase shifter covers a phase shift range of 360°; during the design process of the 360-degree terahertz phase shifter, the input and output between the units are matched to reduce the phase shift error introduced by the cascade impedance mismatch of each unit, thereby ensuring that the entire terahertz phase shifter has a high phase shift accuracy in the sub-terahertz frequency band.

[0037] In some embodiments, the first 90-degree phase-shift coupling unit 2 and the second 90-degree phase-shift coupling unit 4 have the same structure, including a 90-degree coupler and a single-pole double-throw switch SPDT (Single Pole Double Throw).

[0038] The first 90-degree phase-shift coupling unit 2 includes a first 90-degree coupler and a first single-pole double-throw switch SPDT;

[0039] The input end of the first 90-degree coupler is connected to the output end of the 90-degree phase shifter 1 , the output end of the first 90-degree coupler is connected to the first single-pole double-throw switch SPDT, and the first single-pole double-throw switch SPDT is connected to the 180-degree phase-shift coupling unit 3 .

[0040] The second 90-degree phase-shift coupling unit 4 includes a second 90-degree coupler and a second single-pole double-throw switch SPDT;

[0041] The input end of the second 90 degree coupler is connected to the output end of the 180 degree phase shift coupling unit 3, the output end of the second 90 degree coupler is connected to the second single pole double throw switch SPDT, and the common node of the second single pole double throw switch SPDT is used as the RF signal output end.

[0042] In some embodiments, an active amplifier is arranged between the 90-degree phase shifter 1 and the first 90-degree phase shift coupling unit 2, and the output end of the second 90-degree phase shift coupling unit 4 is connected to the active amplifier, that is, the active amplifier is connected to the output end of the second single-pole double-throw switch SPDT, and the active amplifier is used to amplify and enhance the RF signal.

[0043] In some embodiments, the 180-degree phase-shift coupling unit 3 adopts a 180-degree coupler, the structure of the 180-degree coupler is a quarter-wavelength transmission line coupling structure, and the 90-degree coupler unit is a branch line bridge coupler structure. The 180-degree coupler and the 90-degree coupler can also adopt microstrip line structure couplers, waveguide structure couplers, stripline couplers or coaxial line couplers.

[0044] In some embodiments, the path selection switch in the 90-degree phase shifter 1 is a single-pole multi-throw switch, including multiple transmission lines, the input ends of the multiple transmission lines are connected to form a common node, and the output end of each transmission line is connected to a transistor and an impedance converter in sequence; the substrate of the transistor is grounded through a first resistor, and the control end of the transistor is connected to a second resistor. When the control end of the transistor is at a low level, the corresponding transmission line is turned on to transmit the radio frequency signal.

[0045] The single-pole multi-throw switch adopts parallel transmission line resonance technology, which makes the transmission line equivalent to an inductor. The inductor resonates with the transistor, allowing the RF signal to pass more efficiently in the on state, thereby reducing the insertion loss. The reduction in insertion loss means that the energy loss of the RF signal during the transmission process is reduced, thereby improving the efficiency and quality of RF signal transmission.

[0046] At the same time, as a switching element, the working state (on or off) of the transistor is determined by the control terminal signal. The first resistor is added between the substrate and the ground of the transistor, and the second resistor is added to the control terminal of the transistor. The introduction of these two resistors plays multiple roles. On the one hand, it helps to stabilize the working state of the transistor and prevent malfunctions caused by parasitic effects and noise interference; on the other hand, the resistor also participates in the impedance matching of the signal path, further optimizing the transmission performance of the RF signal during the switching state conversion. Especially when the transistor is in the off state, the resonant circuit enhances the reflection and attenuation of the signal, thereby improving the isolation of the path selection switch.

[0047] In addition, impedance transformers are set at selected nodes of the transmission line to reduce RF signal reflection and insertion loss caused by impedance mismatch. This impedance matching design not only improves the isolation of the transistor in the off state, but also ensures the efficient transmission of the RF signal in the on state.

[0048] The path selection switch achieves the performance characteristics of low insertion loss and high isolation of the path selection switch by adopting parallel transmission line resonance technology, adding resistors to the substrate and control end of the transistor, and setting an impedance transformer at the selection node, thereby realizing precise control and efficient transmission of radio frequency signals.

[0049] The transmission line is a coplanar waveguide transmission line, a microstrip line or a stripline, preferably a coplanar waveguide transmission line.

[0050] The transmission line is wired in a reciprocating folding manner to reduce the area of ​​the path selection switch, and is applied to communication equipment, which is conducive to the miniaturization of the communication equipment; for example, the transmission line is arranged in a folded serpentine shape.

[0051] The transistor is a CMOS (Complementary Metal-Oxide-Semiconductor) transistor, a BJT (Bipolar Junction Transistor), a FET (Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), a PNP transistor (PIN represents the structural type of the transistor, P-type semiconductor, intrinsic semiconductor and N-type semiconductor), a PIN transistor or an NPN transistor, preferably a CMOS transistor.

[0052] The PNP transistor consists of three different semiconductor regions, and its structure is marked as PNP, that is, two P-type semiconductor regions sandwich an N-type semiconductor region. These three regions are called the emitter (the first P-type region), the base (N-type region), and the collector (the second P-type region).

[0053] The "NPN" in the NPN transistor represents the structural type of the transistor, namely N-type semiconductor-P-type semiconductor-N-type semiconductor, the middle layer is P-type semiconductor, and the two sides are N-type semiconductors.

[0054] In this embodiment, a CMOS transistor is preferred, whose gate is the control terminal, the gate is connected to the second resistor, the source is grounded, the substrate is grounded through the first resistor, the drain is connected to the selection node of the transmission line, and the impedance converter is connected to the drain.

[0055] In some embodiments, the primary phase module of the 90-degree phase shifter 1 uses two single-pole, three-throw switches SP3T (Single Pole, 3 Throw), the single-pole, three-throw switches SP3T include three phase selection paths, and the selection nodes of the two single-pole, three-throw switches SP3T are connected by three sections of coplanar waveguide transmission lines.

[0056] The secondary phase module includes two single-pole, four-throw switches SP4T (Single Pole, 4 Throw), and the single-pole four-throw switch SP4T includes four phase selection paths. The selection nodes of the two single-pole four-throw switches SP4T are connected through four sections of coplanar waveguide transmission lines; the common node of a single-pole three-throw switch SP3T is connected to the common node of a single-pole four-throw switch SP4T, the common node of another single-pole three-throw switch SP3T is used as the RF signal input end, and the common node of another single-pole four-throw switch SP4T is used as the RF signal output end.

[0057] The coplanar waveguide transmission line is wired in a folded serpentine manner to reduce the area of ​​the 90-degree phase shifter 1, which is beneficial to the miniaturization of the entire 360-degree terahertz phase shifter.

[0058] See also Figure 2 , single-pole triple-throw switch SP3T, the selection node of the first phase selection path is connected in sequence to the CMOS transistor M 5 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 32 The selection node of the second phase selection path is connected in sequence to the CMOS transistor M 6 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 33 The selection node of the third phase selection path is connected in sequence to the CMOS transistor M 7 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 34 .

[0059] The CMOS transistor M 5 The gate connection resistance R 12 , the substrate passes through the resistor R 9 Ground; the CMOS transistor M 6 The gate connection resistance R 13 , the substrate passes through the resistor R 10 Ground; the CMOS transistor M 7 The gate connection resistance R 11 , the substrate passes through the resistor R 14 Ground.

[0060] See also Figure 3 , single-pole four-throw switch SP4T, the selection node of the first phase selection path is connected in sequence to the CMOS transistor M 1 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 42 The selection node of the second phase selection path is connected in sequence to the CMOS transistor M 2 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 43 The selection node of the third phase selection path is connected in sequence to the CMOS transistor M 3 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 44 The selection node of the fourth phase selection path is connected in sequence to the CMOS transistor M 4 and impedance converter, the output end of the impedance converter is used as the RF signal output end P 45 .

[0061] The CMOS transistor M 1 The gate connection resistance R5 , the substrate passes through the resistor R 1 Ground; the CMOS transistor M 2 The gate connection resistance R 6 , the substrate passes through the resistor R 2 Ground; the CMOS transistor M 3 The gate connection resistance R 7 , the substrate passes through the resistor R 3 Ground; the CMOS transistor M 4 The gate connection resistance R 8 , the substrate passes through the resistor R 4 Ground.

[0062] When the above 90-degree phase shifter 1 is working, the transmission path of the RF signal is as follows:

[0063] When the control terminal V 5 is low level, the control terminal V 6 and control terminal V 7 is high level, the RF signal is from the RF signal input terminal P 31 Input and transmit to the RF signal output terminal P 32 ;

[0064] When the control terminal V 6 is low level, the control terminal V 5 and control terminal V 7 is high level, the RF signal is from the RF signal input terminal P 31 Input and transmit to the RF signal output terminal P 33 ;

[0065] When the control terminal V 7 is low level, the control terminal V 5 and control terminal V 6 is high level, the RF signal is from the RF signal input terminal P 31 Input and transmit to the RF signal output terminal P 34 .

[0066] CMOS transistor M for SP4T switch 1 The control terminal is V 1 , CMOS transistor M 2 The control terminal is V 2 , CMOS transistor M 3 The control terminal is V 3 , CMOS transistor M 4 The control terminal is V 4 .

[0067] When the control terminal V 1 is low level, the control terminal V 2 , control terminal V 3and control terminal V 3 is high level, the RF signal is from the RF signal input terminal P 41 Input and transmit to the RF signal output terminal P 42 ;

[0068] When the control terminal V 2 is low level, the control terminal V 1 , control terminal V 3 and control terminal V 3 is high level, the RF signal is from the RF signal input terminal P 41 Input and transmit to the RF signal output terminal P 43 ;

[0069] When the control terminal V 3 is low level, the control terminal V 1 , control terminal V 2 and control terminal V 4 is high level, the RF signal is from the RF signal input terminal P 41 Input and transmit to the RF signal output terminal P 44 .

[0070] When the control terminal V 4 is low level, the control terminal V 1 , control terminal V 2 and control terminal V 3 is high level, the RF signal is from the RF signal input terminal P 41 Input and transmit to the RF signal output terminal P 45 .

[0071] The 90-degree phase shifter 1 controls the phase shift state through a transistor to achieve a phase shift with a step of 5.625° within a 90-degree phase shift range. Due to the symmetry of the single-pole three-throw switch SP3T and the single-pole four-throw switch SP4T, the fluctuation of the parasitic parameters of the 90-degree phase shifter 1 in different states is reduced, thereby effectively improving the phase shift accuracy of the entire terahertz phase shifter.

[0072] The 360-degree terahertz phase shifter is simulated. Figure 4 The relative phase shift value and phase shift accuracy of the 360-degree terahertz phase shifter are shown in Figure 2. Figure 5 The graph shows the phase shift mean square error and insertion loss mean square error of the 360-degree terahertz phase shifter.

[0073] In the 191.5-210 GHz (gigahertz) frequency band, the 360-degree terahertz phase shifter achieves a phase shift accuracy of 5 bits, and the phase mean square error is less than 5.625°, which shows good phase shifter accuracy. In the 192-210 GHz frequency band, the insertion loss is less than 12 dB, and the insertion loss mean square error is less than 1.5 dB, which effectively proves the effectiveness of the 360-degree terahertz phase shifter in the coordinated optimization of insertion loss and phase shift accuracy.

[0074] The 360-degree terahertz phase shifter adopts a phase shift accuracy desensitization design method based on high-isolation time-delay switching technology, and utilizes the symmetry and high isolation of the single-pole multi-throw switch in different working states to reduce the changes in parasitic parameters of the 360-degree terahertz phase shifter in different phase shift states, thereby ensuring the phase shift accuracy of the 360-degree terahertz phase shifter. The 360-degree terahertz phase shifter weakens the coupling relationship between insertion loss and phase shift accuracy from the circuit solution level, realizes the coordinated optimization of insertion loss and phase shift accuracy of the 360-degree terahertz phase shifter, and obtains better insertion loss and phase shift accuracy performance.

[0075] Secondly, the high-isolation time-delay switching technology used in the 360-degree terahertz phase shifter has the advantages of low insertion loss and wide flatness. Therefore, a constant-gain active amplifier can be used to compensate for the insertion loss of the 360-degree terahertz phase shifter, thereby reducing the insertion loss of the entire 360-degree terahertz phase shifter.

[0076] In addition, the single-pole three-throw switch and single-pole four-throw switch in the 360-degree terahertz phase shifter use parallel transmission line resonance technology to reduce the insertion loss of the RF signal in the on state, thereby reducing the insertion loss of the 360-degree terahertz phase shifter; an impedance converter is added to the selection node of the single-pole multi-throw switch, so that the transistor can provide better isolation effect when in the off state, further reducing the insertion loss and improving the phase shift accuracy.

[0077] The present application also provides a terahertz phased array radar, comprising the above-mentioned 360-degree terahertz phase shifter.

[0078] The present application also provides a communication device, comprising the above-mentioned 360-degree terahertz phase shifter.

[0079] The present application also provides an electronic device, comprising the above-mentioned 360-degree terahertz phase shifter.

[0080] The electronic device is a terahertz imaging device. Terahertz waves can penetrate non-metallic materials such as clothing and plastics, so terahertz imaging technology has great potential in the field of security inspection. As part of the imaging system, the terahertz phase shifter can optimize the phase characteristics of the signal, improve the resolution and clarity of the imaging, and thus more accurately identify contraband hidden in clothing or packages.

[0081] This electronic device is a biological detection device that can analyze the vibration mode of biological molecules through terahertz spectroscopy technology to achieve high-precision human tissue imaging and tumor detection. In this process, the terahertz phase shifter plays a role in adjusting the signal phase, improving the accuracy and reliability of detection.

[0082] The electronic device is a terahertz spectrum analysis system. As a part of the spectrum analysis system, the terahertz phase shifter can optimize the phase characteristics of the signal and improve the accuracy and sensitivity of the spectrum analysis.

[0083] The electronic device is an audio device, and the function of the terahertz phase shifter is mainly reflected in adjusting the phase of the audio signal, thereby producing a specific sound effect or improving the audio quality.

[0084] The above contents are only for explaining the technical idea of ​​the present invention and cannot be used to limit the protection scope of the present invention. Any changes made on the basis of the technical solution in accordance with the technical idea proposed by the present invention shall fall within the protection scope of the claims of the present invention.

Claims

1. A 360-degree terahertz phase shifter, characterized in that: It comprises a 90-degree phase shifter (1), wherein the output end of the 90-degree phase shifter (1) is cascaded with a first 90-degree phase shift coupling unit (2), a 180-degree phase shift coupling unit (3) and a second 90-degree phase shift coupling unit (4); The 90-degree phase shifter (1) comprises a primary phase module and a secondary phase module connected in series; The primary phase module and the secondary phase module each include two path selection switches with the same structure, and the two path selection switches are connected through a multi-section transmission line; the phase selection path of the path selection switch of the primary phase module is smaller than the phase selection path of the path selection switch of the secondary phase module; The first 90-degree phase-shift coupling unit (2) and the second 90-degree phase-shift coupling unit (4) both comprise a 90-degree coupler and a single-pole double-throw switch SPDT connected thereto; The first 90-degree phase-shift coupling unit (2) comprises a first 90-degree coupler and a first single-pole double-throw switch SPDT; The input end of the first 90-degree coupler is connected to the output end of the 90-degree phase shifter (1), the output end of the first 90-degree coupler is connected to the first single-pole double-throw switch SPDT, and the first single-pole double-throw switch SPDT is connected to the 180-degree phase shift coupling unit (3); The second 90-degree phase-shift coupling unit (4) comprises a second 90-degree coupler and a second single-pole double-throw switch SPDT; The input end of the second 90-degree coupler is connected to the output end of the 180-degree phase-shift coupling unit (3), and the output end of the second 90-degree coupler is connected to the second single-pole double-throw switch SPDT; The path selection switch comprises a plurality of transmission lines, the input ends of the plurality of transmission lines are connected to form a common node, and the output ends of the transmission lines are connected to a transistor and an impedance converter in sequence; the substrate of the transistor is grounded through a first resistor, and the control end of the transistor is connected to a second resistor; During the transmission process, the radio frequency signal is transmitted along the transmission line corresponding to the low level at the control end of the transistor.

2. A 360-degree terahertz phase shifter according to claim 1, characterized in that: An active amplifier is provided between the 90-degree phase shifter (1) and the first 90-degree phase shift coupling unit (2), and / or the output end of the second 90-degree phase shift coupling unit (4) is connected to the active amplifier.

3. The 360-degree terahertz phase shifter according to claim 1, characterized in that: The gate of the transistor is a control terminal, the gate is connected to the second resistor, the source is grounded, the substrate is grounded through the first resistor, the drain is connected to the selection node of the transmission line, and the impedance converter is connected to the drain.

4. The 360-degree terahertz phase shifter according to claim 1, characterized in that: The transmission line is wired in a reciprocating folding manner.

5. The 360-degree terahertz phase shifter according to claim 1, characterized in that: The path selection switch of the primary phase module is a single-pole three-throw switch, and the path selection switch of the secondary phase module is a single-pole four-throw switch.

6. A terahertz phased array radar, characterized in that: A 360-degree terahertz phase shifter comprising any one of claims 1 to 5.

7. A communication device, characterized in that: A 360-degree terahertz phase shifter comprising any one of claims 1 to 5.

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