The invention belongs to a five-bit radio-frequency MEMS phase shifter in radio-frequency communication and MEMS technologies, comprising a CPW signal wire, an insulating layer, a grounding wire, an MEMS hole-plate metal beam, an elastic cantilever-type support, a proportional capacitor, a direct current (DC) bias electrode, an insulating layer, 31 MEMS switches consisting of bias leads, 5 DC loaded electrodes, connecting leads and a substrate with an insulating layer. The invention effectively overcomes the defect of phase-shifting malfunction of the MEMS metal beam due to self oscillation by adding the DC bias electrode, adopts the hole-plate metal beam and the elastic cantilever-type support to decrease a voltage to be pulled down by approximate 9V, not only realizes the small step of 11.25, 5-bit phase shifting and 32 phase-shifting states, but also has little reflection loss and high phase-shifting precision up to 3.5 and has the advantages of low insertion loss and pull-down voltage, small step amplitude, high bits, phase-shifting precision and reliability of the phase shifter, simpler machining process, matched use with a modern electronic communication system, and the like.