Radio frequency active phase shifter structure

Abstract

The invention discloses a radio frequency active phase shifter structure, and relates to the technical field of electronic circuit design, in particular to the technical field of active phase shifterdesign suitable for a phased array system. The structure comprises an orthogonal coupler formed by an orthogonal hybrid network; a quadrature amplitude control module composed of a common-gate transistor array; an orthogonal synthesis and output matching network; an interstage matching network composed of a transformer and a capacitor; an orthogonal calibration module composed of a transistor array; and a bias module composed of a common source transistor. The structure is suitable for the CMOS process. By means of the low coupling coefficient coupler, the bandwidth of orthogonal signals is broadened, the non-ideal influence on the switching state of the transistor is eliminated through the common-gate differential transistor, the amplitude control precision is improved, and the purposes of the 360-degree phase adjustment range, the 6-bit phase shift, the broadband width, the high precision, the low amplitude deviation and the low cost are achieved.

Description

technical field [0001] The invention relates to the technical field of electronic circuit design, in particular to the technical field applicable to the design of active phase shifters in phased array systems. Background technique [0002] In recent years, 5G communication technology has developed rapidly, which puts forward high requirements on channel capacity and data transmission rate. Due to the abundant spectrum resources in the high-frequency bands above 6 GHz, most 5G networks will be deployed in the high-frequency bands, or millimeter wave bands. In order to compensate for high-frequency propagation loss and achieve flexible signal coverage, multi-antenna array and beamforming technologies were introduced and developed into one of the key technologies of 5G - massive multiple-input multiple-output technology (Massive MIMO). In addition to applications in the communication field, phased array technology is also widely used in the field of radar technology. Compared ...

AI Technical Summary

Problems solved by technology

Among them, the tail current controlled amplifier adjusts the gain of the transistor by changing the tail current, however, the parasitic parameters of the transistor change at the same time, resulting in additional phase shift and port mismatch, thus deteriorating the accuracy of the synthesized vector; the current switch array is proportional to Switch the magnitude of the output current to adjust the gain. However, the switching characteristics of the transistor are not ideal, especially in the millimeter wave frequency band. The disconnected transistor has obvious leakage current, which will also cause problems such as amplitude deviation, additional phase shift and port mismatch. Limits the number and precision of phase shifts that can be achieved

Therefore, the existing active phased array structure is difficult to meet the higher requirements for phase shift number and precision in future 5G communication and high-performance radar applications

[0004] Radio frequency integrated circuits, especially millimeter wave integrated circuits, generally use high-electron mobility transistor (high-electron mobility transistor, HEMT) monolithic-microwave-integrated-circuit (monolithic-microwave-integrated-circuit) technology, such as gallium nitride (GaN) and gallium arsenide (GaAs) processes, but they are relatively expensive; in addition, they cannot be integrated with CMOS digital integrated circuits, resulting in phase shifters using these processes that cannot integrate control logic circuits

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