Broadband six-bit MMIC numerical control phase shifter

Abstract

One embodiment of the invention discloses a broadband six-bit MMIC numerical control phase shifter. The phase shifter comprises a 5.625-degree phase shifting unit, a 11.25-degree phase shifting unit, a 22.5-degree phase shifting unit, a 45-degree phase shifting unit, a 90-degree phase shifting unit and a 180-degree phase shifting unit. The 5.625-degree phase shift unit adopts a series inductance parallel switch structure; the 11.25-degree phase shift unit, the 22.5-degree phase shift unit and the 45-degree phase shift unit adopt T-shaped phase shifter structures; the 90-degree phase shift unit adopts a reflection type structure composed of a Lange coupler and a reflection terminal; and the 180-degree phase shift unit adopts a structure of a balanced-unbalanced converter and a single-pole double-throw switch.

Description

technical field [0001] The invention relates to the field of digitally controlled phase shifters, in particular to a broadband six-bit MMIC digitally controlled phase shifter. Background technique [0002] Phase shifter is a key component mainly used in electronic communication systems such as electronic countermeasure radar, digital mobile communication, microwave and millimeter wave communication. As the key circuit of active phased array transmitting / receiving components in phased array radar and electronic warfare, digitally controlled phase shifter controls the phase change of each radiation unit on the array to realize fast detection and tracking of moving targets in the air. 360° on-chip passive phase shifter structure usually adopts 5.625° phase shift unit circuit, 11.25° phase shift unit circuit, 22.5° phase shift unit circuit, 45° phase shift unit circuit, 90° phase shift unit circuit, 180° phase shift unit circuit Unit circuits are cascaded. Under the developmen...

AI Technical Summary

Problems solved by technology

Under the development of existing phase shifters, on-chip passive phase shifters are widely used in various electronic devices due to their advantages of small size and high reliability. Whether it is implemented by means of waveguide, hybrid integration, low-temperature co-fired ceramic three-dimensional integrated circuit, or by gallium arsenide monolithic integrated circuit, the electrical performance indicators are usually relatively poor. The main disadvantages are: 1. Phase shift Low precision; 2. The circuit structure is relatively complex; 3. The process is difficult to realize; 4. The circuit size is large; 5. The working bandwidth is narrow; 6. The electrical performance is poor in consistency; 7. The port standing wave ratio is poor

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