Five-bit X wave band phase shifter

Abstract

The invention belongs to a five-bit X wave band phase shifter matched with an X wave band communication device for use. The five-bit X wave band phase shifter comprises a CPW (circular polarized wave) signal line rotatably arranged on a base plate and chamfering at exterior angles of corners, an insulating layer and CPW (coplanar waveguide) ground wires, an MEMS (micro-electromechanical systems) switch beam, a support plate, an upper polar plate and a lower polar plate of an MAM capacitor as well as an MEMS switch group consisting of components inside a supporting piece thereof. A connecting bridge, a bias electrode and an insulating layer are arranged between the CPW ground wires at the front and rear ends of the corners cross the CPW signal line. The positive electrode and the negative electrode of the bias electrode are connected with a lead. The base plate with the insulating layer is arranged on the upper surface. Compared with a conventional five-bit X wave band phase shifter, the five-bit X wave band phase shifter has the advantages that the area of the five-bit X wave band phase shifter provided by the invention is reduced by nearly 1/3, meanwhile the performance and the stability of the phase shift are improved. Therefore, the five-bit X wave band phase shifter is compact in structure, small in volume, high in strength and stability, low in insertion loss, large in Q value and high in phase shifting precision, and can be processed with high precision and large scale. Meanwhile, the packaging difficulty and the production cost in the production process are reduced and the like.

Description

technical field [0001] The invention belongs to the fields of radio frequency communication and microelectronic machining in electronic science and technology, and in particular relates to a five-bit X-band miniaturized phase shifter of a radio frequency micro-electromechanical system (RF MEMS); the phase shifter can be used with various X Supporting use with band communication equipment. Background technique [0002] Microwave and millimeter-wave phase shifters are key components of phased array antennas in telecom and radar, and are currently implemented based on ferrite materials, PIN diodes (positive-intrinsic negative diodes), or field-effect transistor (FET) switches. Ferrite material phase shifters have good performance, but are expensive to manufacture and consume relatively large DC power like phase shifters with PIN diodes or FET switches. [0003] In recent years, RF MEMS (Radio Frequency Micro-Electro-Mechanical Systems) phase shifters have developed rapidly and...

AI Technical Summary

Problems solved by technology

For example, the publication number is CN101694896A, and the invention name is "five-bit radio frequency micro-electromechanical phase shifter", which is formed by 31 MEMS switches arranged in parallel along the axis of the device; therefore, the traditional 5-bit or more bit shifter Because the phase shifter is too long, its strength and stability are relatively poor, it is easy to damage during use, and its application range is also limited. At the same time, the difficulty of packaging and production costs in the production process of this type of phase shifter are also relatively high.

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