180-degree broadband phase shifter on passive chip

A passive chip and phase shifter technology, applied in the field of phase shifters, can solve the problems of increased insertion loss of inductive switching, increased parasitic amplitude modulation, and deterioration of phase shifting accuracy, and achieves small parasitic amplitude modulation, small insertion loss, and solves electrical problems. Poor indicators

Active Publication Date: 2013-09-04
CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN
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  • Abstract
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  • Application Information

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Problems solved by technology

This technology has certain advantages in frequency bands below the X-band, but when the operating frequency rises to the X-band and above frequency bands, due to the low Q value of the inductor and the increase in the insertion loss of the switch, the parasitic amplitude modulation increases, the operating bandwidth decreases, and the phase shifting accuracy Adverse effects such as deterioration

Method used

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  • 180-degree broadband phase shifter on passive chip
  • 180-degree broadband phase shifter on passive chip
  • 180-degree broadband phase shifter on passive chip

Examples

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Embodiment Construction

[0016] see Figure 2 to Figure 4 , a passive on-chip 180-degree broadband phase shifter, consisting of a balun 1 and a broadband matching SPDT switch 2, the primary coil 3 of the balun 1 is equal in size to the secondary coil 4, and the two ends of the primary coil 3 are bar The two input terminals of balun 1, capacitor C is connected between the two input ports of balun 1; the two ends of the secondary coil 4 are the two output ports of balun 1, and the phase difference of the two output ports is 180 degrees; broadband The matched single-pole double-throw switch 2 switches between the two output ports of the balun 1 to realize a 180-degree broadband phase shift; specifically: the broadband matched single-pole double-throw switch is composed of the first MOS field effect transistor M1 to the second Four MOS field effect transistors M4 and the first resistor R1 to the tenth resistor R10 are formed; the gate of the first MOS field effect transistor M1 is connected to the first c...

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Abstract

The invention provides a 180-degree broadband phase shifter on a passive chip, and the phase shifter comprises a balun and a broadband matched single-pole double-throw switch, and is characterized in that the difference of the phases of the two output ports of the balun is 180 degrees, and the broadband matched single-pole double-throw switch switches between the two output ports of the balun so as to realize the 180-degree broadband phase shifting; the broadband matched single-pole double-throw switch comprises a first metal oxide semiconductor (MOS) field effect transistor, a second MOS field effect transistor, a third MOS field effect transistor, a fourth MOS field effect transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor and a sixth resistor; and the gate of the first MOS field effect transistor is connected with a first control power supply through the first resistor, the gate of the second MOS field effect transistor is connected with a second control power supply through the second resistor, the gate of the third MOS field effect transistor is connected with a third control power supply through the third resistor, and the gate of the fourth MOS field effect transistor is connected with a fourth control power supply through the fourth resistor. According to the 180-degree broadband phase shifter on the passive chip, the broadband low-parasitic amplitude modulation and high-phase shift precision 180-degree phase shifting can be realized, and the phase shifter can be widely applied to electronic warfare radar, digital mobile communication, microwave and millimeter wave communication and other systems.

Description

technical field [0001] The invention relates to a phase shifter, in particular to a passive on-chip 180-degree broadband phase shifter. Background technique [0002] The phase shifter is a key component mainly used in electronic communication systems such as electronic countermeasure radar, digital mobile communication, microwave and millimeter wave communication, etc. Its function is to shift the phase of the input signal by a certain value and then output it. The main parameters describing its performance indicators are: 1) phase shift bandwidth; 2) phase shift accuracy; 3) phase shift time; 4) input and output standing wave ratio; 5) input 1dB compression point; 6) insertion loss; 7) parasitic amplitude modulation; 8) parasitic phase modulation; 9) noise figure, etc.; 360-degree on-chip passive phase shifter structure adopts 180-degree phase shift, 90-degree phase-shift, 45-degree phase-shift, 22.5-degree phase-shift and other phase-shifting units connected in series to a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H7/18
Inventor 谢卓恒范麟万天才徐骅鲁志刚李家祎罗小鹏吕育泽王阆
Owner CHONGQING SOUTHWEST INTEGRATED CIRCUIT DESIGN
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