A perovskite solar cell and a method for preparing the same

Abstract

The present invention relates to the technical field of solar cells, and provides a perovskite solar cell and a preparation method thereof, wherein the perovskite solar cell comprises a substrate, a DMD transparent electrode layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode layer stacked in sequence; wherein the DMD transparent electrode layer comprises a first dielectric layer, a metal layer and a second dielectric layer stacked in sequence, and the second dielectric layer is connected to the hole transport layer; the first dielectric layer and the second dielectric layer are both one of a tin-doped indium oxide film, a fluorine-doped tin oxide film and an aluminum-doped zinc oxide film; the metal layer is one or more of Au, Ag and a slightly oxidized nano-Ag film. The perovskite solar cell provided by the present invention finely controls the growth of each layer by analyzing the material properties of each layer and setting the thickness of each layer, and finally blocks ultraviolet light and mid-to-far infrared light, thereby improving the stability of the perovskite solar cell.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a perovskite solar cell and a preparation method thereof. Background Art

[0002] In recent years, the research on organic-inorganic hybrid perovskite solar cells has made a lot of beneficial progress, and the photoelectric conversion efficiency has been continuously improved, gradually approaching commercial crystalline silicon solar cells. However, relevant studies have shown that organic-inorganic hybrid perovskite solar cells have insurmountable stability problems, which has greatly hindered the commercialization of related products. The root cause is that the organic groups in organic-inorganic hybrid perovskite solar cells have weak tolerance to high temperature and ultraviolet rays. Generally, perovskite solar cells are composed of a transparent electrode layer, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode layer in sequence. The response of the perovskite light-absorbing layer to the solar spectrum basically only exists in the near-ultraviolet-visible-near-infrared band (300~800 nm), and other wavelengths of light cannot enable perovskite solar cells to generate electricity. Organic groups have unstable chemical bonds. Once exposed to strong sunlight, the organic groups will be destroyed by ultraviolet rays, and the thermal effect of far-infrared rays is also very unfavorable to the stable existence of organic groups.

[0003] The vast majority of perovskite solar cells use FTO (fluorine-doped tin oxide) film as a transparent electrode. This material has a high optical transmittance in the visible-near infrared (380-800 nm), generally exceeding 85%. However, it has low losses in mid- and far-infrared light (3000-14000 nm) and ultraviolet light (300-380 nm), which are not only unhelpful for the power generation of perovskite solar cells, but also detrimental to their stability.

[0004] The DMD (dielectric / metal / dielectric multilayer) structure is used instead of the FTO film to make the transparent electrode layer have higher optical transmittance and higher conductivity in the visible light band (380~760 nm). The so-called DMD structure is a dielectric / metal / dielectric sandwich film system that achieves a higher quality factor (FOM) by coordinating the different properties of each layer of materials. The dielectric materials (molybdenum oxide, nickel oxide, titanium oxide, tungsten oxide, tin oxide, copper oxide) used in the common DMD electrode layer may have a slightly low visible light transmittance, which cannot bring out the full performance of the perovskite light-absorbing layer, or cannot block mid- and far-infrared light, and cannot protect the battery from damage by thermal effects, or have a large resistivity, which is not conducive to reducing the series resistance of the entire device. The metal layer materials (gold, silver, copper, aluminum) selected may have large visible light loss or weak conductivity. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the related art. To this end, the present invention provides a perovskite solar cell and a method for preparing the same. By analyzing the material properties of each layer and setting the thickness of each layer, the growth of each layer is finely controlled, and finally ultraviolet light and mid-to-far infrared light are blocked, thereby improving the stability of the perovskite solar cell. The method for preparing the perovskite solar cell provided by the present invention adopts a more stable preparation process, and the DMD transparent electrode layer provided by the present invention can form a crystallized thin film without any high-temperature process.

[0006] The present invention provides a perovskite solar cell, comprising a substrate, a DMD transparent electrode layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode layer stacked in sequence;

[0007] Wherein, the DMD transparent electrode layer comprises a first dielectric layer, a metal layer and a second dielectric layer stacked in sequence, and the second dielectric layer is connected to the hole transport layer;

[0008] The first dielectric layer and the second dielectric layer are both one of a tin-doped indium oxide film, a fluorine-doped tin oxide film and an aluminum-doped zinc oxide film;

[0009] The metal layer is one or more of Au, Ag and slightly oxidized nano-Ag film.

[0010] According to a perovskite solar cell provided by the present invention, the thickness of the first dielectric layer is 30 nm to 50 nm;

[0011] The thickness of the second dielectric layer is 30 nm to 50 nm;

[0012] The thickness of the metal layer is 8 nm to 13 nm.

[0013] A perovskite solar cell provided according to the present invention also includes the substrate being one of mica, polyethylene terephthalate resin and optical glass.

[0014] The present invention also provides a method for preparing a perovskite solar cell, which is used to prepare the above-mentioned perovskite solar cell, comprising:

[0015] S1: using a magnetron sputtering method to sequentially grow a first dielectric layer, a metal layer and a second dielectric layer on a substrate to obtain a DMD transparent electrode layer;

[0016] S2: Spin-coating a hole transport layer precursor solution onto the surface of the second dielectric layer of the DMD transparent electrode layer, and forming a hole transport layer after a first annealing;

[0017] S3: spin coating a perovskite light absorbing layer precursor solution on the surface of the hole transport layer, and forming a perovskite light absorbing layer after a second annealing;

[0018] S4: vacuum evaporating fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline on the surface of the perovskite light-absorbing layer to form an electron transport layer;

[0019] S5: Vacuum-evaporating silver on the surface of the electron transport layer to form a metal electrode layer to obtain a perovskite solar cell.

[0020] According to a method for preparing a perovskite solar cell provided by the present invention, the step S1 includes:

[0021] S11: Evacuate the magnetron sputtering equipment to the set vacuum degree, confirm that the target-substrate distance reaches 80 mm, introduce argon gas, set the argon gas flow rate, adjust the working pressure, and turn on the RF power supply;

[0022] S12: adjusting a first sputtering power of a magnetron sputtering device corresponding to a first dielectric layer target position, controlling a first sputtering time, and generating a first dielectric layer;

[0023] S13: adjusting the second sputtering power of the magnetron sputtering device corresponding to the metal layer target position, controlling the second sputtering time, and generating the metal layer;

[0024] S14: adjusting the third sputtering power of the magnetron sputtering device corresponding to the target position of the second dielectric layer, controlling the third sputtering time, and generating the second dielectric layer.

[0025] According to a method for preparing a perovskite solar cell provided by the present invention, the method further comprises setting a vacuum degree of 4×10 - 4 Pa~6×10 -4 Pa;

[0026] The argon gas flow rate is 75 sccm to 85 sccm;

[0027] The working pressure is 0.9 Pa~1.1 Pa;

[0028] The first sputtering power is 13W~42 W, the second sputtering power is 13W~42 W, and the third sputtering power is 13W~42 W;

[0029] The first sputtering time is greater than or equal to 2 min, the second sputtering time is greater than or equal to 2 min, and the third sputtering time is greater than or equal to 2 min.

[0030] According to a method for preparing a perovskite solar cell provided by the present invention, the target material required for the target position of the first dielectric layer is one or more of tin-doped indium oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide;

[0031] The target material required for the target position of the second dielectric layer is one or more of tin-doped indium oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide;

[0032] The target material required for the metal layer target position is one of Ag and Au.

[0033] According to a method for preparing a perovskite solar cell provided by the present invention, the first annealing temperature is 95°C to 105°C, and the first annealing time is 8 min to 12 min;

[0034] The second annealing temperature is 100°C to 110°C, and the second annealing time is 8 min to 12 min.

[0035] According to a method for preparing a perovskite solar cell provided by the present invention, the concentration of the perovskite light absorbing layer precursor solution is 3.35 mol / L,

[0036] Perovskite is ABX3, where A contains 5% cesium, 95% formamidine, B is lead, and X is iodine.

[0037] According to a method for preparing a perovskite solar cell provided by the present invention, the hole transport layer precursor solution includes a nickel oxide dispersion having a concentration of 5 mg / mL, two organic phosphorus compounds and a solvent;

[0038] The two organophosphorus compounds are a mixed solution of [2-(9H-carbazole-9-yl)ethyl]phosphoric acid and [4-(9H-carbazole-9-yl)butyl]phosphoric acid, with a concentration of 0.3 mg / mL;

[0039] The electron transport layer includes fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.

[0040] The above one or more technical solutions in the embodiments of the present invention have at least one of the following technical effects:

[0041] The present invention provides a perovskite solar cell and a preparation method thereof. By analyzing the properties of each layer of materials and setting the thickness of each layer, the growth of each layer is finely controlled, and ultimately ultraviolet light and mid-to-far infrared light are blocked, thereby improving the stability of the perovskite solar cell.

[0042] The preparation method of the perovskite solar cell adopts a more stable preparation process, and the DMD transparent electrode layer provided by the present invention can form a crystallized film without any high-temperature process.

[0043] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0045] Figure 1 It is a schematic structural diagram of the perovskite solar cell provided by the present invention.

[0046] Figure 2 This is an embodiment of the perovskite solar cell provided by the present invention, and a curve showing the change in transmittance and wavelength of the DMD transparent electrode layer.

[0047] Figure 3 This is an embodiment of the perovskite solar cell provided by the present invention, and a reflectivity and wavelength variation curve of the DMD transparent electrode layer. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme in the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0049] In the description of the embodiments of the present invention, it should be noted that the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. In the description of this specification, the description of reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples without contradiction.

[0050] Combine the following Figures 1 to 3 A perovskite solar cell and a method for preparing the same are described.

[0051] like Figure 1 As shown, a perovskite solar cell comprises a substrate, a DMD transparent electrode layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode layer stacked in sequence;

[0052] Wherein, the DMD transparent electrode layer includes a first dielectric layer, a metal layer and a second dielectric layer stacked in sequence;

[0053] The first dielectric layer and the second dielectric layer are both one of an ITO (tin-doped indium oxide) film, an FTO (fluorine-doped tin oxide) film, and an AZO (aluminum-doped zinc oxide) film;

[0054] The metal layer is one or more of Au, Ag and slightly oxidized nano-Ag film.

[0055] The thickness of the first dielectric layer is 30 nm to 50 nm; it can be 30 nm, 35 nm, 40 nm, or 50 nm;

[0056] The thickness of the second dielectric layer is 30 nm to 50 nm; it can be 30 nm, 35 nm, 40 nm, or 50 nm;

[0057] The thickness of the metal layer is 8 nm~13 nm; it can be selected as 8 nm, 10 nm, 11 nm, 13 nm.

[0058] The thicknesses of the first dielectric layer and the second dielectric layer of the DMD transparent electrode layer do not have to be consistent. When the first dielectric layer and the second dielectric layer are made of the same material, consistent thickness can achieve the best performance. When the first dielectric layer and the second dielectric layer are made of different materials, inconsistent thickness can achieve the best performance.

[0059] By analyzing the material properties of each layer of the DMD transparent electrode layer, setting the thickness of each layer, and finely controlling the growth of each layer, it is ultimately possible to block ultraviolet light and mid-to-far infrared light and improve the stability of perovskite solar cells.

[0060] The metal layer is the core of the DMD transparent electrode layer. In order to simultaneously meet the optoelectronic properties required by the present invention, the metal layer should be selected from materials with the lowest optical loss in the visible light band, the highest optical loss in the ultraviolet band or the mid-to-far infrared band, and the lowest resistivity, and should be sufficiently cheap and have good chemical stability. The first dielectric layer and the second dielectric layer should be selected from materials with high visible light transmittance, the ability to block ultraviolet light and mid-to-far infrared light transmission, and as low a resistivity as possible.

[0061] Since there is a contradiction between the photoelectric performance and the thickness of the metal layer, the thickness of the metal layer should be reduced as much as possible after meeting the conductive performance requirements of the present invention. The thickness of the first dielectric layer and the second dielectric layer need to be tuned and matched to suppress the plasmon effect on the surface of the metal layer.

[0062] According to some embodiments of the present invention, the substrate is one of mica, polyethylene terephthalate resin (PET) and optical glass.

[0063] A method for preparing a perovskite solar cell, comprising:

[0064] S1: using a magnetron sputtering method to sequentially grow a first dielectric layer, a metal layer and a second dielectric layer on a substrate to obtain a DMD transparent electrode layer;

[0065] S11: Evacuate the magnetron sputtering equipment to the set vacuum degree, confirm that the target-substrate distance reaches 80 mm, introduce argon gas, set the argon gas flow rate, adjust the working pressure, and turn on the RF power supply;

[0066] The vacuum degree is 4×10 -4 Pa~6×10 -4 Pa, the ignition pressure is 0.5 Pa~2.0 Pa; the vacuum degree can be selected as 4×10 -4 Pa, 4.5×10 -4 Pa, 5×10 -4 Pa, 6×10 -4 Pa; the starting pressure can be selected as 0.5 Pa, 1.0 Pa, 1.5 Pa, 2.0 Pa;

[0067] Argon gas flow rate is 75 sccm~85 sccm; optional: 75 sccm, 80 sccm, 83 sccm, 85 sccm;

[0068] The working pressure is 0.9 Pa~1.1 Pa; options are 0.9 Pa, 1.0 Pa, and 1.1 Pa.

[0069] S12: adjusting a first sputtering power of a magnetron sputtering device corresponding to a first dielectric layer target position, controlling a first sputtering time, and generating a first dielectric layer;

[0070] The first sputtering power can be selected from 13 W, 20 W, 30 W, and 42 W; the first sputtering time is greater than or equal to 2 min;

[0071] The target material required for the first dielectric layer target position includes one or more of ITO, AZO and FTO;

[0072] S13: adjusting the second sputtering power of the magnetron sputtering device corresponding to the metal layer target position, controlling the second sputtering time, and generating the metal layer;

[0073] The second sputtering power can be selected from 13 W, 20 W, 30 W, and 42 W; the second sputtering time is greater than or equal to 2 min;

[0074] The target material required for the metal layer target position is one of Ag and Au;

[0075] S14: adjusting the third sputtering power of the magnetron sputtering device corresponding to the target position of the second dielectric layer, controlling the third sputtering time, and generating the second dielectric layer.

[0076] The third sputtering power can be selected from 13 W, 20 W, 30 W, and 42 W; the third sputtering time is greater than or equal to 2 min;

[0077] The target material required for the second dielectric layer target position is one or more of ITO, AZO and FTO;

[0078] S2: Spin-coating a hole transport layer precursor solution on the surface of the DMD transparent electrode layer, and forming a hole transport layer after a first annealing;

[0079] The first annealing temperature is 95 ℃~105 ℃, which can be 95 ℃, 98 ℃, 102 ℃, 105 ℃; the first annealing time is 8~12 min, which can be 8 min, 10 min, 11 min, 12 min;

[0080] The hole transport layer precursor solution includes nickel oxide (NiO) dispersion at a concentration of 5 mg / mL, two organophosphorus compounds, and a solvent;

[0081] Among them, the two organophosphorus compounds are a mixed solution of [2-(9H-carbazole-9-yl)ethyl]phosphoric acid (2PACz) / [4-(9H-carbazole-9-yl)butyl]phosphoric acid (4PACz) with a concentration of 0.3 mg / mL.

[0082] S3: spin coating a perovskite light absorbing layer precursor solution on the surface of the hole transport layer, and forming a perovskite light absorbing layer after a second annealing;

[0083] The second annealing temperature is 100°C~110°C, and can be selected as 100°C, 105°C, 108°C, 110°C;

[0084] The second annealing time is 8 min~12 min, which can be selected as 8 min, 10 min, 11 min, 12 min;

[0085] The concentration of the perovskite light absorbing layer precursor solution is 3.35 mol / L.

[0086] Perovskite is ABX3, where A contains 5% cesium, 95% formamidine, B is lead, and X is iodine.

[0087] S4: vacuum evaporating fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline on the surface of the perovskite light-absorbing layer to form an electron transport layer;

[0088] S5: Vacuum-evaporating silver on the surface of the electron transport layer to form a metal electrode layer to obtain a perovskite solar cell.

[0089] The electron transport layer includes fullerene (C 60 ) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).

[0090] Embodiment 1:

[0091] According to a specific embodiment of the present invention, the preparation process of the perovskite solar cell is as follows: a first dielectric layer, a metal layer, and a second dielectric layer are sequentially grown on a substrate by a magnetron sputtering method to obtain a substrate containing a DMD transparent electrode layer. The clean substrate is placed in a magnetron sputtering device, and then the interior is evacuated to 5×10 -4 Pa, then adjust the argon gas flow rate to 80 sccm, the working pressure to 1.0 Pa, confirm that the target-substrate distance reaches 80 mm, turn on the RF power, adjust the ITO target sputtering power to 40.0 W, and control the sputtering time to 4 min 17 s to grow the first dielectric layer; adjust the Ag target sputtering power to 12.0 W, and control the sputtering time to 3 min 3 s to grow the metal layer; adjust the ITO target sputtering power to 40.0 W, and control the sputtering time to 2 min 27 s to grow the second dielectric layer;

[0092] 160 μL of NiO dispersion that was ultrasonicated for more than 10 h was taken and spin-coated on the surface of the DMD transparent electrode layer at a speed of 3000 rpm for 30 s. Then 120 μL of 2PACz / 4PACz mixed solution was taken and spin-coated on the surface of the NiO layer at a speed of 3000 rpm for 30 s. After the spin coating, the sample was annealed on a hot plate at 100 °C for 10 min to form a hole transport layer.

[0093] Pipette 66 μL of Cs 0.05 FA 0.95 The PbI3 precursor solution was dropped onto the surface of the hole transport layer and spin-coated on the surface of the hole transport layer twice, the first time at a speed of 1000 rpm for 10 s, and the second time at a speed of 5000 rpm for 30 s. 160 μL of chlorobenzene was added when there were 5 s left in the second spin coating. After annealing on a hot plate at 105 °C for 10 min, a perovskite light-absorbing layer was formed.

[0094] Fullerene with a thickness of about 25 nm and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline with a thickness of 5 nm were vacuum evaporated on the surface of the perovskite light-absorbing layer to form an electron transport layer.

[0095] Finally, silver with a thickness of about 80 nm was vacuum evaporated on the surface of the electron transport layer to form a metal electrode layer to obtain a complete perovskite solar cell.

[0096] Embodiment 2:

[0097] The difference between this embodiment and embodiment 1 is that the ITO film is replaced by a FTO film, and the rest is the same and will not be repeated here.

[0098] The DMD transparent electrode layer has an increased ability to absorb ultraviolet light.

[0099] Embodiment 3:

[0100] The present embodiment is different from the embodiment 1 in that the Ag film in the DMD transparent electrode layer is replaced with a slightly oxidized nano-Ag film, and the rest is the same and will not be repeated here.

[0101] Since the carrier concentration of the slightly oxidized nano-Ag film is lower than that of the Ag film, the series resistance of the device increases and the visible light transmittance is further improved.

[0102] like Figure 2 As shown, the embodiments 1, 2 and 3 of the present invention all have good visible light transmission capabilities and can hinder the transmission of destructive ultraviolet light. Figure 3 As shown, Embodiment 1, Embodiment 2 and Embodiment 3 of the present invention all have good infrared light reflection capabilities.

[0103] The present invention provides a perovskite solar cell and a preparation method thereof. By analyzing the properties of each layer material and setting the thickness of each layer, the growth of each layer is finely controlled, and ultimately ultraviolet light and mid-to-far infrared light are blocked, thereby improving the stability of the perovskite solar cell.

[0104] The method for preparing the perovskite solar cell provided by the present invention adopts a more stable preparation process, and the DMD transparent electrode layer provided by the present invention can form a crystallized ITO or FTO without any high-temperature process.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A perovskite solar cell, characterized in that: It includes a substrate, a DMD transparent electrode layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode layer stacked in sequence; Wherein, the DMD transparent electrode layer comprises a first dielectric layer, a metal layer and a second dielectric layer stacked in sequence, and the second dielectric layer is connected to the hole transport layer; The first dielectric layer and the second dielectric layer are both one of a tin-doped indium oxide film, a fluorine-doped tin oxide film and an aluminum-doped zinc oxide film; The metal layer is a slightly oxidized nano-Ag film; The thickness of the first dielectric layer is 30 nm to 50 nm; The thickness of the second dielectric layer is 30 nm to 50 nm; The thickness of the metal layer is 8 nm to 13 nm.

2. A perovskite solar cell according to claim 1, characterized in that: The substrate is one of mica, polyethylene terephthalate resin and optical glass.

3. A method for preparing a perovskite solar cell, characterized in that: For preparing the perovskite solar cell according to any one of claims 1 to 2, comprising: S1: using a magnetron sputtering method to sequentially grow a first dielectric layer, a metal layer and a second dielectric layer on a substrate to obtain a DMD transparent electrode layer; S2: Spin-coating a hole transport layer precursor solution onto the surface of the second dielectric layer of the DMD transparent electrode layer, and forming a hole transport layer after a first annealing; S3: spin coating a perovskite light absorbing layer precursor solution on the surface of the hole transport layer, and forming a perovskite light absorbing layer after a second annealing; S4: vacuum evaporating fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline on the surface of the perovskite light-absorbing layer to form an electron transport layer; S5: Vacuum-evaporating silver on the surface of the electron transport layer to form a metal electrode layer to obtain a perovskite solar cell.

4. A method for preparing a perovskite solar cell according to claim 3, characterized in that: The S1 step includes: S11: Evacuate the magnetron sputtering equipment to the set vacuum degree, confirm that the target-substrate distance reaches 80 mm, introduce argon gas, set the argon gas flow rate, adjust the working pressure, and turn on the RF power supply; S12: adjusting a first sputtering power of a magnetron sputtering device corresponding to a first dielectric layer target position, controlling a first sputtering time, and generating a first dielectric layer; S13: adjusting the second sputtering power of the magnetron sputtering device corresponding to the metal layer target position, controlling the second sputtering time, and generating the metal layer; S14: adjusting the third sputtering power of the magnetron sputtering device corresponding to the target position of the second dielectric layer, controlling the third sputtering time, and generating the second dielectric layer.

5. A method for preparing a perovskite solar cell according to claim 4, characterized in that: Set the vacuum degree to 4×10 -4 Pa~6×10 -4 Pa; The argon gas flow rate is 75 sccm to 85 sccm; The working pressure is 0.9 Pa~1.1 Pa; The first sputtering power is 13 W to 42 W, the second sputtering power is 13 W to 42 W, and the third sputtering power is 13 W to 42 W; The first sputtering time is greater than or equal to 2 min, the second sputtering time is greater than or equal to 2 min, and the third sputtering time is greater than or equal to 2 min.

6. The method for preparing a perovskite solar cell according to claim 4, characterized in that: The target material required for the target position of the first dielectric layer is one or more of tin-doped indium oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide; The target material required for the target position of the second dielectric layer is one or more of tin-doped indium oxide, fluorine-doped tin oxide and aluminum-doped zinc oxide; The target material required for the metal layer target position is Ag.

7. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The first annealing temperature is 95°C to 105°C, and the first annealing time is 8 min to 12 min; The second annealing temperature is 100°C to 110°C, and the second annealing time is 8 min to 12 min.

8. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The concentration of the perovskite light absorbing layer precursor solution is 3.35 mol / L. Perovskite is ABX3, where A contains 5% cesium, 95% formamidine, B is lead, and X is iodine.

9. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The hole transport layer precursor solution includes a nickel oxide dispersion having a concentration of 5 mg / mL, two organic phosphorus compounds, and a solvent; The two organophosphorus compounds are a mixed solution of [2-(9H-carbazole-9-yl)ethyl]phosphoric acid and [4-(9H-carbazole-9-yl)butyl]phosphoric acid, with a concentration of 0.3 mg / mL; The electron transport layer includes fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline.

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