Analysis method and system for electronic control performance of semiconductor device

Abstract

The invention relates to the technical field of electric control performance analysis, and particularly discloses an analysis method and system for electric control performance of a semiconductor device, and the method comprises the steps: determining an initial electric control performance grade of the semiconductor device and an electric control performance analysis process voltage, current, frequency and temperature setting scheme, and analyzing an electric control performance analysis environment of the semiconductor device; comparing to obtain an electronic control performance reference evaluation data set of the semiconductor device, analyzing electrical characteristics, frequency response states and thermal characteristics of the semiconductor device, determining first, second and third electronic control performance levels of the semiconductor device, and marking the electronic control performance of the semiconductor device. The method solves the problems that the traditional analysis of the electronic control performance of the semiconductor device is limited to characterization of the electronic control performance, the dynamic performance analysis is insufficient, and the analysis adjustment capability is insufficient, more comprehensively reflects the performance of the semiconductor device under different working conditions, and accurately determines the electronic control performance grade of the device.

Description

Technical Field

[0001] The present invention relates to the technical field of electric control performance analysis, and in particular to an analysis method and system for the electric control performance of a semiconductor device. Background Art

[0002] With the rapid development of semiconductor technology, the complexity and functionality of devices are constantly improving. The requirements for device operating frequency, speed and power consumption have made the study of the electrical control performance of semiconductor devices one of the core issues to ensure device performance and reliability. New materials (such as carbon nanotubes, two-dimensional materials such as graphene) and new semiconductor device structures (such as GAAFET) continue to emerge. The use of these new materials and structures has significantly changed the electrical control performance characteristics of the device. In-depth analysis of the device's electrical control performance, such as threshold voltage, drain-source current, switching speed, etc., is required to optimize these performance parameters and achieve optimal energy efficiency. As the integration and complexity of devices increase, how to ensure their long-term stable operation becomes a challenge. Changes in electrical control performance will affect the life and stability of the device. Therefore, analysis of electrical control performance helps predict the reliability of the device and take measures to extend the life of the device.

[0003] Nowadays, there are still some shortcomings in the analysis of the electronic control performance of semiconductor devices. Specifically, the traditional analysis of the electronic control performance of semiconductor devices is limited to the characterization of electronic control performance, the dynamic performance analysis is insufficient, and the analysis and adjustment capabilities are insufficient. The lack of in-depth analysis of dynamic performance may cause the device to fail to meet the requirements in practical applications. Traditional characterization methods are usually carried out under ideal or simplified experimental conditions, and the impact of the actual working environment on the electronic control performance is not fully considered, resulting in the device may exhibit completely different electronic control performance under different working conditions, making the experimental characterization results inconsistent with the performance in actual use. Traditional analysis methods cannot provide an effective evaluation and adjustment mechanism, resulting in deviations between the device in actual application and the analysis results. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a method and system for analyzing the electrical control performance of a semiconductor device, which can effectively solve the problems involved in the above-mentioned background technology.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: In the first aspect of the present invention, a method for analyzing the electrical control performance of a semiconductor device is provided, comprising the following steps: analyzing the basic characteristics of the semiconductor device to determine the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process; analyzing the electrical control performance analysis environment of the semiconductor device, combining the initial electrical control performance level of the semiconductor device, and obtaining a reference evaluation data set for the electrical control performance of the semiconductor device by comparison, wherein the reference evaluation data set for the electrical control performance of the semiconductor device specifically includes a reference evaluation value for electrical characteristics, a reference evaluation value for frequency response state, and a reference evaluation value for thermal characteristics; based on the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process, The electrical characteristics of the device are analyzed, and the first electrical control performance level of the semiconductor device is determined by combining the electrical characteristics with the evaluation values; the frequency response state of the semiconductor device is analyzed based on the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process, and the second electrical control performance level of the semiconductor device is determined by combining the frequency response state with the evaluation values; the thermal characteristics of the semiconductor device are analyzed based on the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process, and the third electrical control performance level of the semiconductor device is determined by combining the thermal characteristics with the evaluation values; the electrical control performance of the semiconductor device is marked based on the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device and the third electrical control performance level of the semiconductor device.

[0006] As a further method, the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme for the electrical control performance analysis process are determined. The specific analysis process is: obtaining a basic characteristic data set of the semiconductor device, the basic characteristic data set of the semiconductor device specifically includes the carrier mobility of the semiconductor device, the carrier concentration of the semiconductor device, and the resistivity of the semiconductor device; storing the carrier mobility of the semiconductor device, the carrier concentration of the semiconductor device, and the resistivity of the semiconductor device as designated tags, and comparing the designated tags with the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme for the electrical control performance analysis process corresponding to each designated tag stored in the database, so as to obtain the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme for the electrical control performance analysis process corresponding to the designated tags.

[0007] As a further method, a reference evaluation data set for the electronic control performance of semiconductor devices is obtained by comparison, and the specific analysis process is: obtaining a semiconductor device electronic control performance analysis environment data set, the semiconductor device electronic control performance analysis environment data set specifically includes the semiconductor device analysis environment temperature, the semiconductor device analysis environment humidity, and the semiconductor device analysis environment electromagnetic interference intensity; based on the obtained semiconductor device electronic control performance analysis environment data set, a comprehensive analysis is performed to obtain electronic control performance analysis environment characteristic values, and the electronic control performance analysis environment characteristic values ​​are used as the analysis basis for obtaining a reference evaluation data set for the electronic control performance of semiconductor devices by comparison; the electronic control performance analysis environment characteristic values ​​and the initial electronic control performance level of the semiconductor device are stored as designated tags, and the designated tags are compared with the semiconductor device electronic control performance reference evaluation data sets corresponding to the designated tags stored in the database to obtain the semiconductor device electronic control performance reference evaluation data set corresponding to the designated tags.

[0008] As a further method, the first electrical control performance level of the semiconductor device is determined, and the specific analysis process is: obtain a semiconductor device electrical characteristic data set, the semiconductor device electrical characteristic data set specifically includes the absolute value of the difference between the semiconductor device threshold voltage and the reference threshold voltage, the semiconductor device drain-source current value, and the semiconductor device saturation current value; based on the obtained semiconductor device electrical characteristic data set, a comprehensive analysis is performed to obtain an electrical characteristic evaluation value, and the electrical characteristic evaluation value is used as an analysis basis for determining the first electrical control performance level of the semiconductor device; the electrical characteristic evaluation value is compared with the electrical characteristic reference evaluation value; if the electrical characteristic evaluation value is higher than the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 1; if the electrical characteristic evaluation value is equal to the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 0; if the electrical characteristic evaluation value is lower than the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is -1.

[0009] As a further method, the electrical characteristics evaluation value, the specific analysis process is:

[0010]

[0011] Wherein, α is the electrical characteristic evaluation value, yd is the absolute value of the difference between the threshold voltage of the semiconductor device and the reference threshold voltage, ly is the drain-source current value of the semiconductor device, bl is the saturation current value of the semiconductor device, ε1 is the compensation factor of the set yd, ε2 is the compensation factor of the set ly, and ε3 is the compensation factor of the set bl.

[0012] As a further method, the second electrical control performance level of the semiconductor device is determined, and the specific analysis process is: obtaining a frequency response state data set of the semiconductor device, and based on the obtained frequency response state data set of the semiconductor device, comprehensively analyzing to obtain a frequency response state evaluation value, and using the frequency response state evaluation value as an analysis basis for determining the second electrical control performance level of the semiconductor device; comparing the frequency response state evaluation value with the frequency response state reference evaluation value; if the frequency response state evaluation value is higher than the frequency response state reference evaluation value, then the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 1; if the frequency response state evaluation value is equal to the frequency response state reference evaluation value, then the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 0; if the frequency response state evaluation value is lower than the frequency response state reference evaluation value, then the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is -1.

[0013] As a further method, the semiconductor device frequency response state data set specifically includes the semiconductor device cutoff frequency and the semiconductor device maximum oscillation frequency.

[0014] As a further method, the third electrical control performance level of the semiconductor device is determined, and the specific analysis process is: obtain a thermal characteristic data set of the semiconductor device, the thermal characteristic data set of the semiconductor device specifically includes the junction temperature rise rate of the semiconductor device, the thermal resistance of the semiconductor device, and the heat dissipation rate of the semiconductor device; based on the obtained thermal characteristic data set of the semiconductor device, a thermal characteristic evaluation value is obtained by comprehensive analysis, and the thermal characteristic evaluation value is used as an analysis basis for determining the third electrical control performance level of the semiconductor device; the thermal characteristic evaluation value is compared with the thermal characteristic reference evaluation value; if the thermal characteristic evaluation value is higher than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 1; if the thermal characteristic evaluation value is equal to the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 0; if the thermal characteristic evaluation value is lower than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is -1.

[0015] As a further method, the electrical control performance of the semiconductor device is marked, and the specific analysis process is: the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device and the third electrical control performance level of the semiconductor device are accumulated to obtain the electrical control performance level of the semiconductor device; the electrical control performance level of the semiconductor device is compared with the initial electrical control performance level of the semiconductor device; if the electrical control performance level of the semiconductor device is higher than the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as excellent; if the electrical control performance level of the semiconductor device is equal to the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as average; if the electrical control performance level of the semiconductor device is lower than the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as poor.

[0016] The second aspect of the present invention provides an analysis system for the electrical control performance of a semiconductor device, comprising a basic characteristic analysis module, a reference evaluation data set comparison module, a first electrical control performance level determination module, a second electrical control performance level determination module, a third electrical control performance level determination module and an electrical control performance marking module, wherein: the basic characteristic analysis module is used to analyze the basic characteristics of the semiconductor device, determine the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process; the reference evaluation data set comparison module is used to analyze the electrical control performance analysis environment of the semiconductor device, and compare the initial electrical control performance level of the semiconductor device to obtain a reference evaluation data set for the electrical control performance of the semiconductor device, wherein the reference evaluation data set for the electrical control performance of the semiconductor device specifically includes an electrical characteristic reference evaluation value, a frequency response state reference evaluation value and a thermal characteristic reference evaluation value; the first electrical control performance level determination module is used to determine the electrical control performance level based on the electrical control performance analysis process. The module for determining the first electronic control performance level of the semiconductor device is used to determine the first electronic control performance level of the semiconductor device based on the setting scheme of voltage, current, frequency and temperature in the process of electronic control performance analysis, analyze the electrical characteristics of the semiconductor device, and determine the second electronic control performance level of the semiconductor device by referring to the evaluation value in combination with the reference of the evaluation value to the electrical characteristics; the module for determining the third electronic control performance level is used to determine the third electronic control performance level of the semiconductor device based on the setting scheme of voltage, current, frequency and temperature in the process of electronic control performance analysis, analyze the thermal characteristics of the semiconductor device, and determine the third electronic control performance level of the semiconductor device by referring to the evaluation value in combination with the reference of the thermal characteristics; the electronic control performance marking module is used to mark the electronic control performance of the semiconductor device based on the initial electronic control performance level of the semiconductor device, the first electronic control performance level of the semiconductor device, the second electronic control performance level of the semiconductor device and the third electronic control performance level of the semiconductor device.

[0017] Compared with the prior art, the embodiments of the present invention have at least the following advantages or beneficial effects:

[0018] (1) The present invention provides a method and system for analyzing the electrical control performance of semiconductor devices, analyzes key parameters such as voltage, current, frequency and temperature, and combines the initial electrical control performance level with a reference evaluation data set to accurately determine the electrical control performance level of the device. This not only reflects the performance of the semiconductor device under different working conditions in a more comprehensive manner, but also ensures that the marked performance level has a scientific basis, avoiding the one-sidedness caused by reliance on a single indicator. The electrical characteristics, frequency response state and thermal characteristics are independently analyzed and combined, which can effectively ensure the stability of the semiconductor device in various working scenarios. In different working environments, the electrical control performance is comprehensively analyzed under various conditions, thereby improving the adaptability of the product.

[0019] (2) The present invention determines the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process by analyzing the basic characteristics of the semiconductor device. In the process of electrical control performance analysis, by formulating reasonable voltage, current, frequency and temperature setting schemes, it can be ensured that the working conditions of the device during testing and use match the actual application environment. Targeted optimization can not only improve the working efficiency of the device, but also reduce power consumption and heat generation, thereby extending the service life of the device. A comprehensive analysis of the basic characteristics of the semiconductor device, combined with the formulated analysis process setting scheme, can ensure that the analysis results under different conditions are consistent.

[0020] (3) The present invention analyzes the electrical control performance analysis environment of the semiconductor device, combines the initial electrical control performance level of the semiconductor device, and compares it to obtain a reference evaluation data set for the electrical control performance of the semiconductor device. The actual electrical control performance environment is analyzed, and combined with the initial electrical control performance level, the reference evaluation data set is compared. This ensures that the electrical control performance of the semiconductor device is accurately and objectively analyzed. Different working environment conditions may have a significant impact on the performance, and the actual performance of the device under various working conditions can be more accurately reflected. Comparison of the electrical control performance evaluation data set can help developers identify deviations or potential problems in the device's electrical characteristics, frequency response, thermal characteristics, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention is further described using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. A person skilled in the art can obtain other drawings based on the following drawings without creative work.

[0022] Figure 1 The figure is a schematic flow chart of the method steps of the present invention.

[0023] Figure 2It is a schematic diagram of system module connection of the present invention. DETAILED DESCRIPTION

[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0025] Reference Figure 1 As shown, the first aspect of the present invention provides a method for analyzing the electrical control performance of a semiconductor device, including: analyzing the basic characteristics of the semiconductor device, determining the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process.

[0026] The specific analysis process is: obtaining a basic characteristic data set of semiconductor devices, which specifically includes the carrier mobility of semiconductor devices, the carrier concentration of semiconductor devices, and the resistivity of semiconductor devices; storing the carrier mobility of semiconductor devices, the carrier concentration of semiconductor devices, and the resistivity of semiconductor devices as designated tags, and comparing the designated tags with the initial electrical control performance level of semiconductor devices and the voltage, current, frequency, and temperature setting schemes of the electrical control performance analysis process corresponding to each designated tag stored in a database, so as to obtain the initial electrical control performance level of semiconductor devices and the voltage, current, frequency, and temperature setting schemes of the electrical control performance analysis process corresponding to the designated tags.

[0027] In a specific embodiment, carrier mobility refers to the speed at which electrons or holes move in a semiconductor material under an applied electric field, reflecting the ability of carriers to move in the material. High mobility usually means higher conductivity and faster response speed, which is obtained based on a Hall effect meter. Carrier concentration refers to the number of electrons or holes per unit volume in a semiconductor material. The carrier concentration is determined by the doping level of the material. N-type materials are mainly electron carriers, and P-type materials are mainly hole carriers, which is obtained based on a Hall effect meter. Resistivity refers to the ability of a material to hinder electric current. The resistivity of a semiconductor material can be calculated based on its carrier concentration, carrier mobility and material properties, which is obtained based on a four-probe tester.

[0028] It needs to be explained that the higher the above-mentioned carrier mobility, the faster the carriers move in the semiconductor material, the higher the electrical conductivity of the material, and the lower the resistivity. The carrier mobility is inversely proportional to the resistivity. The higher the carrier concentration, the more conductive particles in the material, the increased conductivity, and the decreased resistivity. The carrier concentration and resistivity are also inversely proportional. Resistivity is the result of the combined effect of carrier mobility and carrier concentration. High mobility and high concentration of carriers will reduce the resistivity of the material and make the material more conductive.

[0029] It should be explained that the above-mentioned direct comparison of the basic characteristics of semiconductor devices (carrier mobility, carrier concentration, resistivity) with the designated tags stored in the database can quickly determine the initial electrical control performance level of the device and the corresponding test conditions, reduce human intervention, and significantly shorten the time for performance evaluation and test plan formulation. The tag system in the database is based on a large amount of historical data and can provide a reliable reference for new devices. By comparing the existing basic characteristic data sets, it can ensure that the selected electrical control performance level and test parameters (voltage, current, frequency, temperature) are highly matched with the actual performance requirements of the device, thereby improving the accuracy and reliability of the analysis. Storing the basic characteristic data of semiconductor devices as tags and automatically comparing them with the existing tags in the database can greatly improve the automation level of the entire performance analysis process, reduce manual operations and errors, and enhance the efficiency and consistency of the analysis process.

[0030] The semiconductor device electrical control performance analysis environment is analyzed, and combined with the initial electrical control performance level of the semiconductor device, a reference evaluation data set for the semiconductor device electrical control performance is obtained by comparison. The reference evaluation data set for the semiconductor device electrical control performance specifically includes electrical characteristic reference evaluation values, frequency response state reference evaluation values, and thermal characteristic reference evaluation values.

[0031] The specific analysis process is as follows: obtaining a semiconductor device electrical control performance analysis environment data set, which specifically includes the semiconductor device analysis environment temperature, the semiconductor device analysis environment humidity, and the semiconductor device analysis environment electromagnetic interference intensity; based on the obtained semiconductor device electrical control performance analysis environment data set, a comprehensive analysis is performed to obtain electrical control performance analysis environment characteristic values, and the electrical control performance analysis environment characteristic values ​​are used as an analysis basis for comparing and obtaining a semiconductor device electrical control performance reference evaluation data set; the electrical control performance analysis environment characteristic values ​​and the initial electrical control performance level of the semiconductor device are stored as designated tags, and the designated tags are compared with the semiconductor device electrical control performance reference evaluation data sets corresponding to the designated tags stored in the database to obtain the semiconductor device electrical control performance reference evaluation data set corresponding to the designated tags.

[0032] It should be explained that the above-mentioned ambient temperature refers to the ambient temperature of the semiconductor device during operation or testing. The temperature has a significant impact on the performance of the semiconductor device (such as leakage current, switching speed, stability, etc.), especially under high or low temperature conditions, the performance of the device may change significantly, based on temperature sensors or thermocouples. Ambient humidity refers to the water vapor content in the air around the semiconductor device, usually expressed as relative humidity (%RH). Humidity also affects the performance of semiconductor devices, especially in high humidity environments. Water vapor may enter the surface or interior of the device, resulting in increased leakage current, device failure and even corrosion, based on humidity sensors or hygrometers. Electromagnetic interference refers to the impact of external electromagnetic fields on semiconductor devices. Electromagnetic interference may come from nearby electronic devices, wireless signal sources or power transmission equipment, etc. EMI intensity refers to the strength of this electromagnetic interference, which will affect the normal operation of semiconductor devices, resulting in signal interference, misoperation or performance degradation, based on electromagnetic interference testers.

[0033] It needs to be explained that when the temperature rises, the water content of the air increases, so high temperature is usually accompanied by higher humidity. Temperature changes in a high humidity environment may intensify the condensation or evaporation of water vapor, especially when the temperature drops rapidly, the humidity is likely to increase, which may cause condensation on the surface or inside the semiconductor device, increasing the risk of device failure. Increased temperature will affect the conductivity and operating frequency of semiconductor devices. Under high temperature conditions, the resistivity of the material may decrease, resulting in greater current fluctuations and noise, which may increase the risk of electromagnetic interference. High temperature may also affect the stability of the circuit, making the device more susceptible to external EM I. When the humidity is high, the conductivity of the air may increase, which will lead to an enhanced propagation capability of electromagnetic interference signals in the surrounding environment. Cables or circuit boards in high humidity environments may become more susceptible to electromagnetic interference, especially when water vapor penetrates the material, the shielding effect of the circuit is weakened and the signal integrity is reduced.

[0034] It should be explained that the above analysis of external environmental factors such as temperature, humidity and electromagnetic interference intensity can comprehensively evaluate the impact of the environment on the performance of semiconductor devices. Traditional electronic control performance evaluation often ignores these factors. Through the comprehensive analysis of environmental characteristic values, we can more accurately understand the performance of devices under different working conditions. Ambient temperature, humidity and electromagnetic interference intensity have a direct impact on the performance of semiconductor devices (such as working stability, signal integrity, etc.), especially in high temperature, high humidity or strong electromagnetic interference environment. Comprehensive analysis of these environmental factors and comparison with reference evaluation data sets can more accurately predict the performance of devices in real working environments. The analysis of environmental characteristic values ​​can cover a variety of application scenarios, including testing requirements in extreme environments, and improve the comprehensiveness and depth of testing.

[0035] It should be explained that the above-mentioned electronic control performance analysis environmental characteristic values, the specific analysis process is:

[0036]

[0037] Wherein, ω is the environmental characteristic value of the electronic control performance analysis, hw is the environmental temperature of the semiconductor device analysis, hs is the environmental humidity of the semiconductor device analysis, dc is the electromagnetic interference intensity of the semiconductor device analysis environment, μ1 is the compensation factor of the set hw, μ2 is the compensation factor of the set hs, μ3 is the compensation factor of the set dc, and e is a natural constant.

[0038] It needs to be explained that the above-mentioned environmental characteristic values ​​for electronic control performance analysis are calculated through analysis of ambient temperature, ambient humidity and electromagnetic interference intensity of semiconductor devices, and HW, HS and DC are normalized. Ambient temperature, humidity and electromagnetic interference are three key factors affecting the performance of semiconductor devices. Combining these factors into a characteristic value can more comprehensively reflect the performance of the device under complex environmental conditions and ensure a comprehensive evaluation of environmental factors. Calculating environmental characteristic values ​​can help designers better control and optimize the performance of semiconductor devices in different working environments, analyze the impact of environmental factors on electronic control performance, identify performance degradation that may be caused by the environment in advance, reduce the risk of device failure due to environmental changes, and thus improve product life and stability.

[0039] It needs to be explained that the compensation factors of hw, hs, and dc set above are obtained from a database. Based on historical data, a mapping set of historically measured semiconductor device analysis environment temperature, semiconductor device analysis environment humidity, semiconductor device analysis environment electromagnetic interference intensity and the compensation factors of hw, hs, and dc is established to obtain the compensation factors of hw, hs, and dc corresponding to the current hw, hs, and dc.

[0040] It should be noted that ε1, ε2, ε3, σ1, σ2, τ1, τ2, and τ3 mentioned below are also obtained through a mapping set of historical data and compensation factors established in a database, that is, the corresponding compensation factors are obtained based on current data.

[0041] Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the electric characteristics of the semiconductor device are analyzed, and the first electric control performance level of the semiconductor device is determined in combination with the electric characteristics reference evaluation value.

[0042] The specific analysis process is as follows: obtaining a semiconductor device electrical characteristic data set, the semiconductor device electrical characteristic data set specifically includes the absolute value of the difference between the semiconductor device threshold voltage and the reference threshold voltage, the semiconductor device drain-source current value, and the semiconductor device saturation current value; based on the obtained semiconductor device electrical characteristic data set, a comprehensive analysis is performed to obtain an electrical characteristic evaluation value, and the electrical characteristic evaluation value is used as an analysis basis for determining the first electrical control performance level of the semiconductor device; the electrical characteristic evaluation value is compared with the electrical characteristic reference evaluation value; if the electrical characteristic evaluation value is higher than the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 1; if the electrical characteristic evaluation value is equal to the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 0; if the electrical characteristic evaluation value is lower than the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is -1.

[0043] It needs to be explained that the above threshold voltage refers to the voltage at which the semiconductor device starts to conduct when the gate voltage reaches a certain value. The reference threshold voltage is the ideal threshold voltage defined in the design or standard. The absolute value of the difference between the two reflects the deviation between the actual device and the design or standard, which is obtained based on a semiconductor device tester. The drain-source current refers to the small current from the drain to the source when the gate voltage is zero or insufficient bias voltage is applied and the device is in the off state. This current is called leakage current, which reflects the static power consumption of the device. It is usually hoped that the smaller the better. It is obtained based on a precision ammeter. The saturation current refers to the maximum current value between the drain and the source when the semiconductor device works in the saturation region (such as MOSFET). The saturation current usually reflects the driving capability of the device and is the maximum current output after the device is turned on. It is obtained based on a parameter analyzer.

[0044] It needs to be explained that the above threshold voltage determines the switching behavior of the device. If the threshold voltage is lower than the reference value, the device may generate a large drain-source current in the non-conducting state, resulting in an increase in static power consumption. Therefore, the threshold voltage is inversely proportional to the drain-source current, that is, the lower the threshold voltage, the larger the drain-source current. The threshold voltage also affects the saturation current value of the device. A lower threshold voltage makes it easier for the device to reach a saturated state, thereby increasing the saturation current. A higher threshold voltage reduces the saturation current. Therefore, the threshold voltage is inversely proportional to the saturation current. Although the drain-source current and the saturation current correspond to the off state and the on state, respectively, they are both affected by the threshold voltage. A low threshold voltage may simultaneously lead to a larger drain-source current and a saturation current.

[0045] It needs to be explained that the above analysis of electrical characteristic data such as threshold voltage, drain-source current and saturation current value of semiconductor devices can quantitatively evaluate the electrical control performance of the device. This quantitative analysis is more scientific and accurate than the traditional empirical evaluation method, and helps to quickly evaluate the advantages and disadvantages of the device. It comprehensively analyzes multiple electrical characteristics (threshold voltage difference, drain-source current, saturation current value) to avoid errors caused by a single performance parameter, evaluates device performance from multiple dimensions, and ensures the comprehensiveness and accuracy of the conclusions. By comparing the electrical characteristic evaluation values ​​with the reference values, the performance of semiconductor devices is divided into levels 1, 0, and -1 according to the rules, forming a clear classification system. Standardized classification helps to quickly screen and apply devices, and automatically compares the electrical characteristic evaluation values ​​with the reference evaluation values, which can be quickly completed through automated testing equipment, thereby reducing the time and testing costs of manual participation.

[0046] Further, the electrical characteristics evaluation value, the specific analysis process is:

[0047]

[0048] Wherein, α is the electrical characteristic evaluation value, yd is the absolute value of the difference between the threshold voltage of the semiconductor device and the reference threshold voltage, ly is the drain-source current value of the semiconductor device, bl is the saturation current value of the semiconductor device, ε1 is the compensation factor of the set yd, ε2 is the compensation factor of the set ly, and ε3 is the compensation factor of the set bl.

[0049] It needs to be explained that the above-mentioned electrical characteristic evaluation values ​​are calculated through the absolute value of the difference between the threshold voltage of the semiconductor device and the reference threshold voltage, the drain-source current value of the semiconductor device, and the saturation current value of the semiconductor device. yd, ly, and bl are normalized. Through the comprehensive calculation of the three key parameters of threshold voltage, drain-source current and saturation current, the electrical characteristics of the device can be more comprehensively reflected. Analyzing a certain parameter alone may not be able to fully understand the performance of the device. Through multi-dimensional electrical characteristic evaluation values, a wider range of electrical performance can be captured. The comprehensive calculation of the absolute value of the difference between the threshold voltage and the reference value, the drain-source current and the saturation current provides a quantitative way to measure the deviation of device performance from the design standard. Quantitative evaluation can reduce subjective judgment and improve the accuracy and consistency of evaluation. Through the calculation of electrical characteristic evaluation values, developers can clearly understand the impact of different design parameters (such as threshold voltage, drain-source current, saturation current) on the overall electrical control performance, so as to flexibly adjust the design during the development and production stages to obtain the best balance between performance and power consumption.

[0050] Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the frequency response state of the semiconductor device is analyzed, and the second electric control performance level of the semiconductor device is determined by combining the frequency response state with the evaluation value.

[0051] The specific analysis process is as follows: obtaining a frequency response state data set of the semiconductor device, and based on the obtained frequency response state data set of the semiconductor device, comprehensively analyzing to obtain a frequency response state evaluation value, and using the frequency response state evaluation value as an analysis basis for determining the second electrical control performance level of the semiconductor device; comparing the frequency response state evaluation value with the frequency response state reference evaluation value; if the frequency response state evaluation value is higher than the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 1; if the frequency response state evaluation value is equal to the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 0; if the frequency response state evaluation value is lower than the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is -1.

[0052] It needs to be explained that the above-mentioned acquisition and analysis of the frequency response state data of semiconductor devices can accurately quantify the response performance of the device under different frequency conditions. Compared with the traditional qualitative analysis, the quantified frequency response state evaluation value can provide more scientific data support for design and optimization. By comparing with the frequency response state reference evaluation value, the performance level of the device can be obtained based on the standardized evaluation process, which ensures the consistency and reliability of the evaluation results. The frequency response state evaluation value is divided into three situations: higher than, equal to, and lower than the reference value. The second electronic control performance level of the device can be quickly determined to be 1, 0 or -1. By comparing the actual frequency response state with the reference evaluation value, the gap between the current device and the standard value can be seen more clearly. Whether it is too high or too low, the difference can be quantified, so that targeted adjustments and optimizations can be made.

[0053] Furthermore, the semiconductor device frequency response state data set specifically includes the semiconductor device cutoff frequency and the semiconductor device maximum oscillation frequency.

[0054] It should be explained that the above-mentioned cutoff frequency refers to the frequency when the gain of the semiconductor device (such as current gain or voltage gain) drops to 1 (i.e. 0dB). At this frequency, the gain of the device can no longer effectively amplify the signal, so it usually represents the high-frequency performance of the device. For transistors, such as MOSFET or BJT, the cutoff frequency is defined as the operating limit of the device at high frequency. Beyond this frequency, the gain of the device will drop rapidly. It is obtained based on a network analyzer. The maximum oscillation frequency refers to the highest frequency at which the semiconductor device can spontaneously generate stable oscillations without external feedback. It represents the limit frequency at which the semiconductor device can maintain a stable working state without external gain compensation. It is obtained based on a network analyzer or an RF test system.

[0055] It needs to be explained that the cutoff frequency and maximum oscillation frequency of the above-mentioned semiconductor devices both reflect the performance of the devices at high frequencies. The cutoff frequency refers to the frequency when the device gain drops to 1 times, indicating the limit of the device's gain attenuation at high frequencies, while the maximum oscillation frequency is usually higher than the cutoff frequency, representing the highest frequency at which the device can spontaneously oscillate without external feedback. The maximum oscillation frequency depends not only on the gain of the device, but also on parasitic capacitance, resistance and other internal factors. The maximum oscillation frequency is usually greater than the cutoff frequency, and takes into account both the gain and the stability of the device. These two factors together determine the performance limit of the device in high-frequency applications. The cutoff frequency represents the gain capability, while the maximum oscillation frequency represents the device's stable oscillation capability at high frequencies.

[0056] It should be explained that the specific analysis process of the above frequency response state evaluation value is as follows:

[0057]

[0058] Wherein, β is the frequency response state evaluation value, jz is the cutoff frequency of the semiconductor device, zd is the maximum oscillation frequency of the semiconductor device, σ1 is the compensation factor of the set jz, and σ2 is the compensation factor of the set zd.

[0059] It should be explained that the above-mentioned frequency response state evaluation value is calculated through the cutoff frequency and the maximum oscillation frequency of the semiconductor device, and jz and zd are normalized. The cutoff frequency and the maximum oscillation frequency are two key high-frequency performance indicators. The frequency response state evaluation value can more comprehensively reflect the response capability of the semiconductor device under high-frequency conditions, and can evaluate the stability and performance of the device in different frequency ranges. The cutoff frequency indicates the gain limit of the device, while the maximum oscillation frequency reflects the stability and oscillation capability of the device under high frequency. By combining these two parameters, the evaluation value can more comprehensively predict the performance of the device under high-frequency conditions. By calculating the evaluation value, the difference between the cutoff frequency and the maximum oscillation frequency can be quantified, thereby more accurately reflecting the performance of semiconductor devices in high-frequency applications. The quantitative evaluation method reduces the dependence on a single parameter and improves the accuracy and consistency of high-frequency performance evaluation.

[0060] Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the thermal characteristics of the semiconductor device are analyzed, and the third electric control performance level of the semiconductor device is determined in combination with the thermal characteristics reference evaluation value.

[0061] The specific analysis process is as follows: obtaining a semiconductor device thermal characteristic data set, the semiconductor device thermal characteristic data set specifically includes the semiconductor device junction temperature rise rate, the semiconductor device thermal resistance, and the semiconductor device heat dissipation rate; based on the obtained semiconductor device thermal characteristic data set, a comprehensive analysis is performed to obtain a thermal characteristic evaluation value, and the thermal characteristic evaluation value is used as an analysis basis for determining the third electrical control performance level of the semiconductor device; the thermal characteristic evaluation value is compared with the thermal characteristic reference evaluation value; if the thermal characteristic evaluation value is higher than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 1; if the thermal characteristic evaluation value is equal to the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 0; if the thermal characteristic evaluation value is lower than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is -1.

[0062] In a specific embodiment, the junction temperature rise rate refers to the rate of change of the junction temperature (the temperature of the hottest area inside the device) with time during the operation of the semiconductor device, reflecting the heat accumulation rate of the device under load conditions, usually expressed in ° C / s. If the junction temperature rises faster, it indicates that the heat dissipation of the device is not ideal, which may cause the device to overheat and fail. It is obtained based on a thermocouple or an infrared thermal imager. The thermal resistance represents the resistance of heat from the junction (i.e., the hot spot) of the semiconductor device to the external environment. It is usually expressed in ° C / W (how many degrees Celsius per watt of temperature rise). The larger the thermal resistance, the worse the heat dissipation effect of the device, which means that it is more difficult for heat to be conducted from the node to the outside world, which can easily cause the device to overheat. The thermal resistance is the thermal resistance from the node to the environment, which is obtained based on a thermal resistance measuring instrument or a thermal characteristic analyzer. The heat dissipation rate refers to the speed at which the semiconductor device conducts heat from the inside to the outside world during operation, usually expressed in W (watts), reflecting the ability of the device to eliminate heat during operation. The higher the heat dissipation rate, the faster the device can conduct heat from the inside to the outside world, thereby avoiding overheating. It is obtained based on a heat flow sensor or a thermal characteristic analyzer.

[0063] It needs to be explained that the above-mentioned junction temperature rise rate refers to the rate at which the junction temperature of the device increases over time during operation. It is directly affected by the thermal resistance and heat dissipation rate of the device. Thermal resistance indicates the resistance of the internal heat of the device to be transferred from the junction to the outside. The larger the thermal resistance, the slower the heat conduction and the faster the junction temperature rises. The heat dissipation rate indicates the ability of the device to conduct heat to the outside. The higher the heat dissipation rate, the faster the heat conduction and the slower the junction temperature rises. The thermal resistance is inversely proportional to the heat dissipation rate, and the junction temperature rise rate depends on the balance between the two. The smaller the thermal resistance and the higher the heat dissipation rate, the slower the junction temperature rises and the better the heat dissipation effect.

[0064] It needs to be explained that the above analysis of multiple thermal characteristic parameters such as junction temperature rise rate, thermal resistance and heat dissipation rate can more comprehensively evaluate the thermal performance of semiconductor devices. Compared with a single thermal performance indicator, comprehensive evaluation makes the analysis more comprehensive and accurate. Calculating the thermal characteristic evaluation value and quantifying the thermal performance of the device can more intuitively judge the performance of the device in terms of heat dissipation capability and temperature management, and provide a scientific basis for the performance level division. If the thermal characteristic evaluation value is lower than the reference evaluation value (corresponding level is -1), it means that the heat dissipation performance of the device is poor and there may be a risk of overheating. Based on this information, the design can be adjusted in time or the heat dissipation solution can be improved to avoid potential device failure or shortened life. By comparing the thermal characteristic evaluation value with the reference evaluation value, the third electronic control performance level of the semiconductor device can be quickly determined. The levels are divided into 1, 0, and -1, which simplifies the complex evaluation process and facilitates the rapid determination of the heat dissipation capability of the device.

[0065] It should be explained that the above thermal characteristic evaluation values ​​are analyzed in the following specific process:

[0066]

[0067] Wherein, γ is the thermal characteristic evaluation value, ss is the junction temperature rise rate of the semiconductor device, rz is the thermal resistance of the semiconductor device, sr is the heat dissipation rate of the semiconductor device, τ1 is the compensation factor of the set ss, τ2 is the compensation factor of the set rz, and τ3 is the compensation factor of the set sr.

[0068] It needs to be explained that the above thermal characteristic evaluation values ​​are calculated through the junction temperature rise rate of the semiconductor device, the thermal resistance of the semiconductor device, and the heat dissipation rate of the semiconductor device. SS, Rz, and SR are normalized. The junction temperature rise rate, thermal resistance, and heat dissipation rate are key parameters for measuring the thermal management capabilities of semiconductor devices. By comprehensively calculating the thermal characteristic evaluation values ​​based on these parameters, the thermal performance of the device can be fully reflected. Compared with a single thermal parameter, the comprehensive evaluation can provide a more comprehensive thermal characteristic analysis, and the junction temperature rise rate, thermal resistance, and heat dissipation rate are converted into a comprehensive thermal characteristic evaluation value, which provides a quantitative standard for measuring thermal performance, can reduce the uncertainty of subjective evaluation, improve the accuracy of thermal performance evaluation, and facilitate better comparison of the thermal performance of different devices or different design schemes. If the thermal characteristic evaluation value is lower than expected, the designer can optimize the device structure or heat dissipation solution based on key issues in the thermal characteristics, such as high thermal resistance or low heat dissipation rate, which will help improve the thermal management of the device, reduce the junction temperature, and improve the overall performance and reliability of the device.

[0069] The electrical control performance of the semiconductor device is marked based on the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device, and the third electrical control performance level of the semiconductor device.

[0070] The specific analysis process is: add the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device and the third electrical control performance level of the semiconductor device to obtain the electrical control performance level of the semiconductor device; compare the electrical control performance level of the semiconductor device with the initial electrical control performance level of the semiconductor device; if the electrical control performance level of the semiconductor device is higher than the initial electrical control performance level of the semiconductor device, then the electrical control performance of the semiconductor device is marked as excellent; if the electrical control performance level of the semiconductor device is equal to the initial electrical control performance level of the semiconductor device, then the electrical control performance of the semiconductor device is marked as average; if the electrical control performance level of the semiconductor device is lower than the initial electrical control performance level of the semiconductor device, then the electrical control performance of the semiconductor device is marked as poor.

[0071] In a specific embodiment, the initial electronic control performance level, the first electronic control performance level, the second electronic control performance level and the third electronic control performance level are accumulated, and various key electronic control performance parameters (such as electrical characteristics, frequency response, thermal characteristics, etc.) of the semiconductor device can be comprehensively considered to make the evaluation more comprehensive, avoid the limitations of single-dimensional evaluation, and ensure all-round consideration of device performance. Accumulating the performance levels of different dimensions can effectively reflect the weight and influence of each dimension in the overall performance, help balance the different characteristics of the device, and thus obtain a more objective performance evaluation result. Comparing the accumulated electronic control performance level with the initial electronic control performance level can clearly classify and mark the device performance (excellent, average, poor). The standardized marking system helps to establish a unified quality standard, which is convenient for quickly judging device performance in production and use. Combining the performance levels of multiple dimensions can reduce the impact of fluctuations or anomalies in a single dimension on the overall evaluation, thereby improving the accuracy of performance evaluation. The accumulation method ensures that the final electronic control performance evaluation result is more reliable.

[0072] For example: if the initial electrical control performance level of the semiconductor device is 3, the first electrical control performance level of the semiconductor device is 1, the second electrical control performance level of the semiconductor device is 0, and the third electrical control performance level of the semiconductor device is 1, then the electrical control performance level of the semiconductor device is 3+1+0+1=5, that is, the electrical control performance level of the semiconductor device is 5, and 5>3, the electrical control performance level of the semiconductor device is higher than the initial electrical control performance level of the semiconductor device, and the electrical control performance of the semiconductor device is excellent.

[0073] Reference Figure 2 As shown, the second aspect of the present invention provides an analysis system for the electrical control performance of a semiconductor device, including a basic characteristic analysis module, a reference evaluation data set comparison module, a first electrical control performance level determination module, a second electrical control performance level determination module, a third electrical control performance level determination module and an electrical control performance marking module.

[0074] The basic characteristics analysis module is used to analyze the basic characteristics of semiconductor devices, determine the initial electrical control performance level of semiconductor devices and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process.

[0075] The reference evaluation data set comparison module is used to analyze the semiconductor device electrical control performance analysis environment, and to obtain a semiconductor device electrical control performance reference evaluation data set by comparison with the semiconductor device's initial electrical control performance level. The semiconductor device electrical control performance reference evaluation data set specifically includes electrical characteristic reference evaluation values, frequency response state reference evaluation values, and thermal characteristic reference evaluation values.

[0076] The first electric control performance level determination module is used to analyze the electrical characteristics of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the first electric control performance level of the semiconductor device in combination with the reference evaluation value of the electrical characteristics.

[0077] The second electric control performance level determination module is used to analyze the frequency response state of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the second electric control performance level of the semiconductor device in combination with the frequency response state reference evaluation value.

[0078] The third electric control performance level determination module is used to analyze the thermal characteristics of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the third electric control performance level of the semiconductor device in combination with the thermal characteristics reference evaluation value.

[0079] The electric control performance marking module is used to mark the electric control performance of the semiconductor device based on the initial electric control performance level of the semiconductor device, the first electric control performance level of the semiconductor device, the second electric control performance level of the semiconductor device and the third electric control performance level of the semiconductor device.

[0080] The above contents are merely examples and explanations of the structure of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the structure of the invention or exceed the scope defined by the claims, they should all fall within the protection scope of the present invention.

Claims

1. A method for analyzing the electrical control performance of a semiconductor device, characterized in that: The following steps are involved: Analyze the basic characteristics of semiconductor devices, determine the initial electronic control performance level of semiconductor devices and the voltage, current, frequency and temperature setting scheme during the electronic control performance analysis process; Analyze the semiconductor device electrical control performance analysis environment, and compare with the initial electrical control performance level of the semiconductor device to obtain a semiconductor device electrical control performance reference evaluation data set, wherein the semiconductor device electrical control performance reference evaluation data set specifically includes an electrical characteristic reference evaluation value, a frequency response state reference evaluation value, and a thermal characteristic reference evaluation value; Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the electric characteristics of the semiconductor device are analyzed, and the first electric control performance level of the semiconductor device is determined in combination with the electric characteristics reference evaluation value; Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the frequency response state of the semiconductor device is analyzed, and the second electric control performance level of the semiconductor device is determined by referring to the evaluation value in combination with the frequency response state; Based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, the thermal characteristics of the semiconductor device are analyzed, and the third electric control performance level of the semiconductor device is determined in combination with the thermal characteristics reference evaluation value; The electrical control performance of the semiconductor device is marked based on the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device, and the third electrical control performance level of the semiconductor device.

2. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The voltage, current, frequency and temperature setting scheme for determining the initial electric control performance level of the semiconductor device and the electric control performance analysis process is specifically analyzed as follows: Acquire a basic characteristic data set of a semiconductor device, wherein the basic characteristic data set of a semiconductor device specifically includes carrier mobility of the semiconductor device, carrier concentration of the semiconductor device, and resistivity of the semiconductor device; The carrier mobility, carrier concentration and resistivity of the semiconductor device are stored as designated labels, and the designated labels are compared with the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process corresponding to each designated label stored in the database to obtain the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process corresponding to the designated label.

3. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The comparison obtains a reference evaluation data set for the electronic control performance of semiconductor devices, and the specific analysis process is as follows: Acquire a semiconductor device electric control performance analysis environment data set, the semiconductor device electric control performance analysis environment data set specifically includes semiconductor device analysis environment temperature, semiconductor device analysis environment humidity, semiconductor device analysis environment electromagnetic interference intensity; Based on the acquired semiconductor device electric control performance analysis environment data set, a comprehensive analysis is performed to obtain electric control performance analysis environment characteristic values, and the electric control performance analysis environment characteristic values ​​are used as an analysis basis for obtaining a semiconductor device electric control performance reference evaluation data set by comparison; The electric control performance analysis environment characteristic value and the initial electric control performance level of the semiconductor device are stored as a designated label, and the designated label is compared with the semiconductor device electric control performance reference evaluation data set corresponding to each designated label stored in the database to obtain the semiconductor device electric control performance reference evaluation data set corresponding to the designated label.

4. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The specific analysis process of determining the first electronic control performance level of the semiconductor device is as follows: Acquire a semiconductor device electrical characteristic data set, wherein the semiconductor device electrical characteristic data set specifically includes an absolute value of a difference between a threshold voltage of the semiconductor device and a reference threshold voltage, a drain-source current value of the semiconductor device, and a saturation current value of the semiconductor device; Based on the acquired semiconductor device electrical characteristic data set, an electrical characteristic evaluation value is obtained by comprehensive analysis, and the electrical characteristic evaluation value is used as an analysis basis for determining a first electrical control performance level of the semiconductor device; comparing the electrical characteristic evaluation value with the electrical characteristic reference evaluation value; If the electrical characteristic evaluation value is higher than the electrical characteristic reference value evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 1; If the electrical characteristic evaluation value is equal to the electrical characteristic reference value evaluation value, then the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is 0; If the electrical characteristic evaluation value is lower than the electrical characteristic reference evaluation value, the first electrical control performance level of the semiconductor device corresponding to the electrical characteristic evaluation value is -1.

5. The method for analyzing the electrical control performance of a semiconductor device according to claim 4, characterized in that: The specific analysis process of the electrical characteristic evaluation value is as follows: Wherein, α is the electrical characteristic evaluation value, yd is the absolute value of the difference between the threshold voltage of the semiconductor device and the reference threshold voltage, ly is the drain-source current value of the semiconductor device, bl is the saturation current value of the semiconductor device, ε1 is the compensation factor of the set yd, ε2 is the compensation factor of the set ly, and ε3 is the compensation factor of the set bl.

6. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The specific analysis process of determining the second electric control performance level of the semiconductor device is as follows: Acquire a frequency response state data set of the semiconductor device, and obtain a frequency response state evaluation value by comprehensive analysis based on the acquired frequency response state data set of the semiconductor device, and use the frequency response state evaluation value as an analysis basis for determining a second electronic control performance level of the semiconductor device; comparing the frequency response state assessment value with a frequency response state reference assessment value; If the frequency response state evaluation value is higher than the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 1; If the frequency response state evaluation value is equal to the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is 0; If the frequency response state evaluation value is lower than the frequency response state reference evaluation value, the second electrical control performance level of the semiconductor device corresponding to the frequency response state evaluation value is -1.

7. The method for analyzing the electrical control performance of a semiconductor device according to claim 6, characterized in that: The semiconductor device frequency response state data set specifically includes the semiconductor device cutoff frequency and the semiconductor device maximum oscillation frequency.

8. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The specific analysis process of determining the third electronic control performance level of the semiconductor device is as follows: Acquire a semiconductor device thermal characteristic data set, wherein the semiconductor device thermal characteristic data set specifically includes a semiconductor device junction temperature rise rate, a semiconductor device thermal resistance, and a semiconductor device heat dissipation rate; Based on the acquired semiconductor device thermal characteristic data set, a thermal characteristic evaluation value is obtained through comprehensive analysis, and the thermal characteristic evaluation value is used as an analysis basis for determining the third electronic control performance level of the semiconductor device; comparing the thermal characteristic evaluation value with a thermal characteristic reference evaluation value; If the thermal characteristic evaluation value is higher than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 1; If the thermal characteristic evaluation value is equal to the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is 0; If the thermal characteristic evaluation value is lower than the thermal characteristic reference evaluation value, the third electrical control performance level of the semiconductor device corresponding to the thermal characteristic evaluation value is -1.

9. The method for analyzing the electrical control performance of a semiconductor device according to claim 1, characterized in that: The specific analysis process of marking the electrical control performance of the semiconductor device is as follows: Accumulating the initial electrical control performance level of the semiconductor device, the first electrical control performance level of the semiconductor device, the second electrical control performance level of the semiconductor device, and the third electrical control performance level of the semiconductor device to obtain the electrical control performance level of the semiconductor device; comparing the electrical control performance level of the semiconductor device with the initial electrical control performance level of the semiconductor device; If the semiconductor device electrical control performance level of the semiconductor device is higher than the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as excellent; If the semiconductor device electrical control performance level of the semiconductor device is equal to the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as average; If the semiconductor device electrical control performance level of the semiconductor device is lower than the initial electrical control performance level of the semiconductor device, the electrical control performance of the semiconductor device is marked as poor.

10. A semiconductor device electrical control performance analysis system, applied to the semiconductor device electrical control performance analysis method according to claims 1 to 9, characterized in that: It includes a basic characteristic analysis module, a reference evaluation data set comparison module, a first electric control performance level determination module, a second electric control performance level determination module, a third electric control performance level determination module and an electric control performance marking module, wherein: The basic characteristics analysis module is used to analyze the basic characteristics of the semiconductor device, determine the initial electrical control performance level of the semiconductor device and the voltage, current, frequency and temperature setting scheme of the electrical control performance analysis process; The reference evaluation data set comparison module is used to analyze the semiconductor device electrical control performance analysis environment, and compare the semiconductor device electrical control performance reference evaluation data set in combination with the semiconductor device initial electrical control performance level, wherein the semiconductor device electrical control performance reference evaluation data set specifically includes an electrical characteristic reference evaluation value, a frequency response state reference evaluation value, and a thermal characteristic reference evaluation value; The first electric control performance level determination module is used to analyze the electrical characteristics of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the first electric control performance level of the semiconductor device in combination with the reference evaluation value of the electrical characteristics; The second electric control performance level determination module is used to analyze the frequency response state of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the second electric control performance level of the semiconductor device in combination with the frequency response state reference evaluation value; The third electric control performance level determination module is used to analyze the thermal characteristics of the semiconductor device based on the voltage, current, frequency and temperature setting scheme of the electric control performance analysis process, and determine the third electric control performance level of the semiconductor device in combination with the thermal characteristics reference evaluation value; The electric control performance marking module is used to mark the electric control performance of the semiconductor device based on the initial electric control performance level of the semiconductor device, the first electric control performance level of the semiconductor device, the second electric control performance level of the semiconductor device and the third electric control performance level of the semiconductor device.

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