Heat treatment apparatus, heat treatment method, and substrate treatment apparatus

Abstract

The invention provides a heat treatment apparatus, a heat treatment method, and a substrate processing apparatus capable of preventing generation of particles and damage of a substrate in a cooling process of the substrate. A heat treatment apparatus according to an embodiment of the present invention comprises: a chamber having a treatment space therein; a plurality of chuck pins supporting the substrate below and configured to independently ascend or descend; a heater for supplying thermal energy to the processing space; a fluid supply port for supplying a fluid to the processing space; a fluid discharge port for discharging the fluid remaining in the processing space to the outside; and a controller that controls a processing process of the substrate, the controller heating the substrate using the heater, and adjusting a height of the chuck pin so that the substrate is held in an inclined posture when the heating process of the substrate is completed, and adjusting a height of the chuck pin so that the substrate is held in the inclined posture when the heating process of the substrate is completed. And a cooling fluid is supplied to the substrate in the inclined posture through the fluid supply port.

Description

Technical Field

[0001] The invention relates to a heat treatment device, a heat treatment method and substrate processing equipment. Background Art

[0002] The semiconductor manufacturing process is a process for manufacturing semiconductor elements on a substrate (e.g., a wafer), and includes, for example, exposure, vapor deposition, etching, ion implantation, cleaning, etc. In order to perform each manufacturing process, semiconductor manufacturing equipment for performing each process is set up in a clean room of a semiconductor manufacturing plant, and the process is performed on the substrate put into the semiconductor manufacturing equipment.

[0003] In the semiconductor manufacturing process, a heat treatment for surface modification may be performed after a treatment process (e.g., etching) for a substrate. If a heat treatment is performed for a substrate, it is necessary to cool the substrate to a temperature below a certain temperature for subsequent processing. For cooling of the substrate, a process of supplying a cooling fluid to the substrate may be performed. However, if the entire area of ​​the substrate is not uniformly cooled, particles may be generated and the substrate may be damaged.

[0004] Patent Document 1: Patent Gazette No. 10-2276002

[0005] Patent Document 2: Patent Publication No. 10-2007-0038854

[0006] Patent Document 3: Patent Gazette No. 10-2246168 Summary of the invention

[0007] The present invention provides a heat treatment device, a heat treatment method and a substrate treatment equipment which can prevent the generation of particles and the damage of the substrate during the cooling process of the substrate.

[0008] It can be that the heat treatment device according to an embodiment of the present invention includes: a chamber, which has a processing space inside; a plurality of chuck pins, which support the substrate at the bottom and are configured to rise or fall independently; a heater, which provides heat energy to the processing space; a fluid supply port, which supplies fluid to the processing space; a fluid discharge port, which discharges the fluid remaining in the processing space to the outside; and a controller, which controls the processing process of the substrate, the controller uses the heater to heat the substrate, and if the heating treatment of the substrate is completed, adjusts the height of the chuck pins so that the substrate remains in an inclined posture, and supplies cooling fluid toward the inclined substrate through the fluid supply port.

[0009] According to an embodiment of the present invention, the chuck pins may be constituted of three and arranged at equal intervals from each other.

[0010] According to an embodiment of the present invention, the chuck pin may be made of quartz material.

[0011] According to an embodiment of the present invention, the chuck pin may include: a main body portion; an inner supporting portion, which is located on the inner side of the main body portion and supports the lower surface of the substrate; and an outer supporting portion, which is located on the outer side of the main body portion and supports the edge side of the substrate.

[0012] According to an embodiment of the present invention, the inner supporting portion may have a triangular pyramid shape that becomes narrower toward the upper portion.

[0013] According to an embodiment of the present invention, the outer supporting portion may include a side wall that is a plane in a vertical direction and a head portion that extends from the side wall and becomes narrower toward the upper portion.

[0014] According to an embodiment of the present invention, the controller may lower a chuck pin, among the plurality of chuck pins, that is most adjacent to the fluid supply port.

[0015] According to an embodiment of the present invention, the controller may confirm the position of the cutout portion of the substrate and lower a chuck pin that is most adjacent to the fluid supply port while being in a non-contact state with the cutout portion of the substrate among the plurality of chuck pins.

[0016] According to an embodiment of the present invention, the controller may raise a chuck pin, among the plurality of chuck pins, that is most adjacent to the fluid discharge port.

[0017] According to an embodiment of the present invention, the controller may confirm the position of the cutout portion of the substrate and raise a chuck pin that is most adjacent to the fluid discharge port while being in a non-contact state with the cutout portion of the substrate among the plurality of chuck pins.

[0018] According to an embodiment of the present invention, the heat treatment device 100 may further include: a cooling plate disposed at a lower portion of the chamber and having a through hole through which the chuck pin can pass and a cooling flow path through which a coolant can flow.

[0019] According to an embodiment of the present invention, the fluid supply port may be located at an upper edge of the chamber.

[0020] According to an embodiment of the present invention, the fluid discharge port may be located at a lower edge of the chamber on an opposite side of the fluid supply port.

[0021] The heat treatment device according to the present invention includes: a chamber having a processing space inside; a plurality of chuck pins supporting a substrate and configured to rise or fall independently; a heater providing heat energy to the processing space; a fluid supply port supplying fluid to the processing space; a fluid discharge port discharging the fluid remaining in the processing space to the outside; and a controller controlling the processing process of the substrate. The heat treatment method performed by the heat treatment device includes: a step of heating the substrate using the heater; and a step of cooling the substrate if the heating treatment of the substrate is completed. The step of cooling the substrate includes: a step of adjusting the height of the chuck pins so that the substrate is maintained in an inclined posture; and a step of supplying a cooling fluid toward the inclined substrate through the fluid supply port.

[0022] It can be that the substrate processing equipment according to the present invention includes: a loading port, a container for accommodating a plurality of substrates; a processing module, which performs process processing on the substrate; and a transfer module, which temporarily stores the substrate taken out from the container and transfers the substrate to the processing module, the processing module includes: a chamber, which has a processing space inside; a plurality of chuck pins, which support the substrate and are configured to rise or fall independently; an upper electrode, to which power is applied for generating plasma in the processing space; a chuck, which is located at the lower part of the processing space and has a lower electrode for generating the plasma and a cooling plate formed with a cooling flow path for the flow of refrigerant; a heater, which provides heat energy to the processing space; a fluid supply port, which supplies fluid to the processing space; a fluid discharge port, which discharges the fluid remaining in the processing space to the outside; and a controller, which controls the process processing of the substrate. The controller supplies power to the upper electrode and the lower electrode to perform plasma treatment on the substrate, and uses the heater to perform heat treatment on the substrate. If the heat treatment is completed, the height of the chuck pin is adjusted to keep the substrate in an inclined posture, and a cooling fluid is supplied toward the inclined substrate through the fluid supply port.

[0023] According to the present invention, after the heating process, the cooling fluid is caused to flow uniformly along the entire area of ​​the inclined substrate, thereby preventing the generation of particles and the damage to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The structure of the heat treatment apparatus according to the present invention is schematically shown.

[0025] Figure 2 The chuck pin is shown viewed from above.

[0026] Figure 3 Shown is the structure of the chuck pin viewed from the side.

[0027] Figure 4 is a flow chart showing a heat treatment process according to the present invention.

[0028] Figure 5 is a flow chart illustrating a substrate cooling process according to the present invention.

[0029] Figure 6 as well as Figure 7 A process of adjusting the height of the chuck pins during substrate cooling according to the present invention is shown.

[0030] Figure 8 The shape of the cooling plate according to the invention is shown.

[0031] Fig. 9 A layout of a substrate processing apparatus according to the present invention is shown.

[0032] Fig.10 The configuration of a processing module in a substrate processing apparatus according to the present invention is shown.

[0033] Fig.11 is a flow chart showing a substrate processing process according to the present invention.

[0034] (Explanation of Reference Numerals)

[0035] 1: Substrate processing equipment

[0036] 10: Loading port

[0037] 20: Transfer module

[0038] 30: Processing module

[0039] 100: Heat treatment device

[0040] 110: Chamber

[0041] 120: Chuck pin

[0042] 130: Heater

[0043] 140: Fluid supply port

[0044] 150: Fluid outlet

[0045] 160: Controller

[0046] 170: Cooling plate

[0047] 180: Upper electrode

[0048] 190: Chuck DETAILED DESCRIPTION

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that a person having ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention. The present invention can be implemented in various forms and is not limited to the embodiments described here.

[0050] In order to clearly describe the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

[0051] In addition, in a plurality of embodiments, components having the same configuration are denoted by the same reference numerals and only representative embodiments are described, and in other embodiments, only the representative embodiments and other configurations are described.

[0052] Throughout the specification, when a part is "connected (or coupled)" to another part, it includes not only the case of "direct connection (or coupling)" but also the case of "indirect connection (or coupling)" via other parts. In addition, when a part "includes" a certain constituent element, it means that other constituent elements may be included, rather than excluding other constituent elements, unless otherwise specifically stated.

[0053] Unless otherwise defined, all terms used herein, including technical terms or scientific terms, have the same meanings as those generally understood by persons skilled in the art to which the present invention belongs. Terms such as terms defined in commonly used dictionaries should be interpreted as having the same meanings as those in the context of the relevant technology, and should not be interpreted as idealized or overly formalized meanings unless explicitly defined in this application.

[0054] Hereinafter, a heat treatment device, a heat treatment method and a substrate processing apparatus that can prevent the generation of particles and damage to the substrate W during the cooling process of the substrate W are described. The heat treatment according to the present invention refers to a process in which the characteristics of the substrate are changed by heating the substrate W. In the present invention, the heat treatment includes all the heating treatment and cooling treatment processes for the substrate W. After performing the heating treatment for the substrate W, it is necessary to cool the substrate W for subsequent processing. The present invention is used to prevent damage to the substrate and particles while rapidly cooling the substrate W.

[0055] Figure 1 The structure of the heat treatment apparatus 100 according to the present invention is schematically shown. The heat treatment apparatus 100 according to the present invention can be provided as a module included in a semiconductor manufacturing device. The heat treatment apparatus 100 can discharge the substrate W after heating and cooling the substrate W. In addition, the heat treatment apparatus 100 can additionally include a mechanism for performing a process treatment (e.g., etching, evaporation) on the substrate W, and can also perform a process treatment and a heat treatment of the substrate W together.

[0056] The heat treatment apparatus 100 according to the present invention includes a chamber 110 having a processing space PZ therein, a plurality of chuck pins 120 supporting a substrate W below the substrate W and configured to independently rise or fall, a heater 130 for supplying heat energy to the processing space PZ, a fluid supply port 140 for supplying a fluid to the processing space PZ, a fluid discharge port 150 for discharging the fluid remaining in the processing space PZ to the outside, and a controller 160 for controlling a process of the substrate W. In addition, the heat treatment apparatus 100 may further include a cooling plate 170 formed with a cooling flow path through which a coolant can flow.

[0057] The chamber 110 provides a processing space PZ for a substrate W. The chamber 110 is configured as a closed processing space PZ. An opening and a door for blocking or opening the opening may be provided on a side wall of the chamber 110 , and the opening allows the substrate W to pass through. Various components for processing the substrate W are provided in the inner space of the chamber 110 .

[0058] The chuck pins 120 support the lower surface and edge area of ​​the substrate W. The chuck pins 120 support the substrate W below the substrate W and prevent the substrate W from being dislocated. In order to ensure temperature uniformity, preferably, the chuck pins 120 can hold the substrate W, but are composed of a minimum number. In an embodiment of the present invention, the chuck pins 120 can be composed of three and are arranged at equal intervals from each other. For example, Figure 2 In this way, the chuck pin 120 can be composed of three chuck pins 120-1, 120-2, and 120-3, and they are arranged at equal intervals. Figure 2 In this way, the chuck pins 120 can be arranged at equal intervals at an angle of 120° from each other. In an embodiment of the present invention, the chuck pins 120 can be made of quartz material.

[0059] On the other hand, referring to Figure 2 A notch Wn is formed in a part of the substrate W. The notch Wn can be used as a mark for identifying the direction of the substrate W. A driving device (e.g., a motor) for raising or lowering the chuck pin 120 can be provided below the chuck pin 120. Figure 2 In the embodiment, a fluid supply port 140 is provided on one side of the chamber 110, and a fluid discharge port 150 is provided on the other side. Figure 2 In the embodiment, one chuck pin 120-1 is provided at a position adjacent to the fluid supply port 140, and two chuck pins 120-2 and 120-3 are provided at a position adjacent to the fluid discharge port 150. According to the present invention, the substrate W is held in a state of being tilted downward with the fluid supply port 140 side, and the cooling fluid CF supplied to the substrate W flows in a state of pushing the substrate W upward and is then discharged through the fluid discharge port 150.

[0060] According to an embodiment of the present invention, the chuck pin 120 includes a main body 120A, an inner support portion 120B located on the inner side of the main body 120A and supporting the lower surface Wb of the substrate W, and an outer support portion 120C located on the outer side of the main body 120A and supporting the edge side We of the substrate W. Figure 3 As shown, a main body 120A is provided at the edge of the position where the substrate W is placed, and an inner support portion 120B and an outer support portion 120C are provided above the main body 120A. The inner support portion 120B and the outer support portion 120C can be fixedly combined with the main body 120A or formed as one body.

[0061] The inner support portion 120B has a triangular pyramid shape that becomes narrower toward the upper portion. The upper end of the inner support portion 120B having the triangular pyramid shape may contact the lower surface of the substrate W. That is, the inner support portion 120B is in point contact with the lower surface of the substrate W. The inner support portion 120B makes point contact with the substrate W, thereby minimizing the temperature change of the substrate W passing through the chuck pin 120.

[0062] The outer supporting portion 120C has a side wall 120Ca that is a plane in the vertical direction Z and a head 120Cb that extends from the side wall 120Ca and becomes narrower toward the upper part. The side wall 120Ca contacts the edge side We of the substrate W to prevent the substrate W from being disengaged from the positioning. The head 120Cb extending above the side wall 120Ca is provided in a conical shape. The head 120Cb is configured to become narrower toward the upper part, so that even if a certain amount of error occurs when the substrate W is loaded onto the chuck pin 120, the substrate W can be stably supported on the chuck pin 120. The outer supporting portion 120C includes a base 120Cc that supports the lower surface Wb of the edge side of the substrate W. The side wall 120Ca and the head 120Cb are provided above the base 120Cc.

[0063] The heater 130 provides heat energy for heating the substrate W. The heater 130 may be located at an upper portion of the chamber 110 and provide heat energy in a downward direction. In order to concentrate heat energy on the substrate W, the heater 130 may be configured as an infrared (IR) lamp.

[0064] The fluid supply port 140 may supply a fluid for heat treatment of the substrate W. For example, the fluid supply port 140 may supply a low-temperature fluid for cooling the substrate W. The fluid supply port 140 may supply a fluid supplied from a fluid supply line 142 disposed outside the chamber 110 to the inner space of the chamber 110. The fluid supply port 140 may be located at one side of an upper portion of the chamber 110 and supply the fluid downward.

[0065] The fluid outlet 150 can discharge the fluid remaining inside the chamber 110 to the outside. The fluid outlet 150 can discharge the cooling fluid to the outside. The cooling fluid flowing into the fluid outlet 150 can be discharged to the outside of the chamber 110 through the fluid discharge line 152. The fluid outlet 150 can be located at one side of the lower part of the chamber 110. In order to discharge the fluid, sound pressure can be applied to the fluid outlet 150.

[0066] like Figure 2 As shown, the fluid supply port 140 may be located at the upper edge of the chamber 110. In addition, the fluid discharge port 150 may be located at the lower edge of the chamber 110 on the opposite side of the fluid supply port 140. The fluid supplied from the fluid supply port 140 to the processing space PZ of the chamber 110 may flow toward the fluid discharge port 150 located at the lower portion of the opposite side, and thus, constantly flow along the upper surface Wf of the substrate W.

[0067] For processing of the substrate W, the controller 160 may control the operation of each component located inside the chamber 110. The controller 160 may be composed of one or more processors (processing circuits). The controller 160 may control the operation of each component through electrical signals. The controller 160 may implement the command words stored in the memory to implement the processing of the substrate W. The command words for the processing of the substrate W may be received from the upper control system or input in advance. In particular, the controller 160 may control the heating and cooling processing of the substrate W.

[0068] like Figure 4 As shown, the heat treatment method of the substrate W executed by the controller 160 according to the present invention includes a step S410 of heating the substrate W using the heater 130 and a step S420 of cooling the substrate W when the heating treatment of the substrate W is completed.

[0069] In step S410, the heater 130 is activated for heating the substrate W. The heat energy generated by the heater 130 may be transferred to the substrate W, and the substrate W may be heated by the heat energy. If the substrate W is heated to a target temperature (e.g., 200° C.) during a certain time (e.g., 120 seconds), the properties of the material formed on the substrate W may change.

[0070] In step S420, if the heating process of the substrate W is completed, a process of cooling the substrate W is performed for rapid subsequent processing. In particular, the present invention can rapidly cool the substrate W while preventing the substrate W from being damaged or particles from being generated due to temperature non-uniformity generated during cooling.

[0071] like Figure 5As shown, the step S420 of cooling the substrate W includes the step S510 of adjusting the height of the chuck pins 120 to keep the substrate W in an inclined posture and the step S520 of supplying the cooling fluid CF toward the substrate W in the inclined posture through the fluid supply port 140 .

[0072] The controller 160 heats the substrate W using the heater 130 , and when the heating process of the substrate W is completed, adjusts the height of the chuck pins 120 to keep the substrate W in an inclined posture, and supplies cooling fluid toward the inclined substrate W through the fluid supply port 140 .

[0073] In step S510 , the controller 160 may raise or lower the chuck pins 120 to keep the substrate W in an inclined posture. The controller 160 may control the motors provided at the bottom of the chuck pins 120 to raise or lower the chuck pins 120 .

[0074] According to an embodiment of the present invention, the step S510 of controlling the height of the chuck pin 120 includes the step of lowering the chuck pin 120-1 that is most adjacent to the fluid supply port 140 among the plurality of chuck pins 120. The controller 160 may lower the chuck pin 120-1 that is most adjacent to the fluid supply port 140 among the plurality of chuck pins 120. Figure 6 As shown, the chuck pin 120 - 1 that is most adjacent to the fluid supply port 140 may be lowered.

[0075] The remaining two chuck pins 120-2 and 120-3 remain unchanged except for the chuck pin 120-1 that is most adjacent to the fluid supply port 140. For example, when the initial height of each chuck pin 120 is 1 cm, the chuck pin 120 that is most adjacent to the fluid supply port 140 may be lowered to a height of 0 cm, and the remaining two chuck pins 120 may remain at a height of 1 cm.

[0076] According to an embodiment of the present invention, the step S510 of controlling the height of the chuck pin 120 includes the steps of confirming the position of the cutout Wn of the substrate W and lowering the chuck pin 120-1 most adjacent to the fluid supply port 140 among the plurality of chuck pins 120 while being in a non-contact state with the cutout Wn of the substrate W. The controller 160 confirms the position of the cutout Wn of the substrate W and lowers the chuck pin 120-1 most adjacent to the fluid discharge port 150 among the plurality of chuck pins 120 while being in a non-contact state with the cutout Wn of the substrate W.

[0077] When the chuck pins 120 contact and support the cutout portion Wn of the substrate W, the substrate W may not be supported smoothly. When the chuck pins 120 contacting the cutout portion Wn of the substrate W are lowered, the substrate W may be separated from the chuck pins 120, so the chuck pins 120 contacting the cutout portion Wn of the substrate W are kept from being lowered. Figure 2 In this way, when the chuck pin 120-1 closest to the fluid supply port 140 is in a state of contacting the cutout Wn of the substrate W, the chuck pin 120-1 does not drop and maintains the initial height. In this case, the other chuck pins 120-2 and 120-3 rise and tilt the substrate W, or the cooling fluid CL can be supplied in a state where the substrate W is parallel without adjusting the height of the chuck pin 120. When the chuck pin 120-1 closest to the fluid supply port 140 is in a state of not contacting the cutout Wn of the substrate W, the chuck pin 120-1 drops, so that the substrate W can be changed to a tilted posture. The position of the cutout Wn can be recognized by a visual unit (e.g., a camera) located above the substrate transfer module before the substrate W is loaded onto the chuck pin 120. In addition, according to an embodiment of the present invention, if the position of the cutout Wn of the substrate W is confirmed, the substrate W can be rotated and loaded onto the chuck pin 120 so that the cutout Wn is not located on the chuck pin 120.

[0078] According to an embodiment of the present invention, the step S510 of controlling the height of the chuck pin 120 includes the step of raising the chuck pins 120-2 and 120-3 that are most adjacent to the fluid outlet 150 among the plurality of chuck pins 120. The controller 160 may raise the chuck pins 120-2 and 120-3 that are most adjacent to the fluid outlet 150 among the plurality of chuck pins 120. For example, Figure 7 In this way, the chuck pins 120 - 2 , 120 - 3 that are most adjacent to the fluid discharge port 150 can rise.

[0079] The remaining chuck pins 120-1 except the chuck pins 120-2 and 120-3 that are most adjacent to the fluid discharge port 150 may remain without rising. For example, when the initial height of each chuck pin 120 is 1 cm, the chuck pins 120-2 and 120-3 that are most adjacent to the fluid discharge port 150 may rise to a height of 2 cm, and the remaining chuck pins 120-1 may remain at a height of 1 cm.

[0080] According to an embodiment of the present invention, the step S510 of controlling the height of the chuck pins includes the steps of confirming the position of the cutout Wn of the substrate W and lowering the chuck pins 120 that are most adjacent to the fluid outlet 150 while being in a non-contact state with the cutout Wn of the substrate W. The controller 160 may confirm the position of the cutout Wn of the substrate W and raise the chuck pins 120-2 and 120-3 that are most adjacent to the fluid outlet 150 while being in a non-contact state with the cutout Wn of the substrate W.

[0081] In the case where the chuck pins 120 contact and support the cutout portion Wn of the substrate W, the substrate W may not be supported smoothly. In the case where the chuck pins 120 contacting the cutout portion Wn of the substrate W are lowered, the substrate W may be separated from the chuck pins 120, so the chuck pins 120 contacting the cutout portion Wn of the substrate W may be kept from rising. For example, Figure 2 In this way, when the chuck pin 120-1 closest to the fluid supply port 140 is in contact with the cutout Wn of the substrate W, the chuck pin 120-1 closest to the fluid supply port 140 does not descend, and the chuck pins 120-2 and 120-3 closest to the fluid discharge port 150 rise, so that the substrate W can maintain an inclined posture. The position of the cutout Wn can be recognized by a visual unit (e.g., camera) located above the substrate transfer module before the substrate W is loaded onto the chuck pin 120.

[0082] In step S520, cooling fluid CF is supplied while the substrate W is maintained in an inclined posture. The substrate W can be cooled more quickly by the cooling fluid CF. According to the present invention, the substrate W is maintained in an inclined state with the fluid supply port 140 side facing downward, and the cooling fluid CF supplied to the substrate W flows in a form of pushing the substrate W upward, and then discharged through the fluid discharge port 150. The cooling fluid CF is supplied in the form of blowing toward the substrate W inclined as in the present invention, so that the substrate W can be cooled quickly and uniformly, so it can be confirmed whether damage to the substrate W and generation of particles are suppressed.

[0083] According to an embodiment of the present invention, a cooling plate 170 having a through hole 170A through which the chuck pin 120 can pass and a cooling channel 170B through which a coolant can flow may be provided at a lower portion of the chamber 110. Figure 1 as well as Figure 8A cooling plate 170 is provided below the substrate W and used to cool the substrate W. The cooling plate 170 may be formed with a through hole 170A through which the chuck pin 120 can pass and a cooling channel 170B through which a coolant can flow. The cooling channel 170B may be formed in a labyrinth shape that can uniformly cool the entire area of ​​the substrate W, and is formed at both ends of an inlet 170Ba through which the coolant flows in and an outlet 170Bb through which the coolant is discharged.

[0084] On the other hand, a substrate processing apparatus 1 having a processing module 30 in which a heat treatment apparatus and a plasma treatment apparatus according to the present invention are mixed can be provided. The substrate processing apparatus 1 according to the present invention can perform heat treatment together with plasma treatment (e.g., etching, evaporation) on a substrate W in one processing module 30.

[0085] The substrate processing apparatus 1 according to the present invention includes a loading port 10 for accommodating a container storing a plurality of substrates, a processing module 30 for performing a process on the substrates W, and a transfer module 20 for temporarily storing the substrates W taken out of the container and transferring the substrates W to the processing module 30 .

[0086] The loading port 10 can be arranged in a row on one side of the substrate processing device 1 and provide a space for placing a container (e.g., a front opening unified pod (FOUP)) for storing substrates W. The loading port 10 can take out the substrate W by opening the door of the container and transfer the taken-out substrate W to the transfer module 20. In addition, the loading port 10 can collect the substrate W from the transfer module 20 after processing and store the substrate W in the container. The loading port 10 may include a table for placing multiple containers and an index robot for transferring the substrate W.

[0087] The transfer module 20 is disposed between the loading port 10 and the processing module 30, and temporarily stores and transfers the substrate W. The transfer module 20 may include a transition chamber for temporarily storing the substrate W and a mobile robot for feeding the substrate into the processing module 30. On the other hand, the transition chamber of the transfer module 20 may be equipped with a camera or a sensor for identifying the cutout portion Wn of the substrate W. The controller 160 may confirm the position of the cutout portion Wn from the camera or the sensor.

[0088] The processing module 30 performs a process on the substrate W. The processing module 30 may be configured as follows: Fig.10 As shown, it can be Fig.11 The plasma treatment step S1110 and the heat treatment step S1120 are performed in this manner. The plasma treatment step S1110 and the heat treatment step S1120 may be repeated multiple times.

[0089] In an embodiment of the present invention, the processing module 30 includes a chamber 110 having a processing space PZ therein, a plurality of chuck pins 120 supporting a substrate W and configured to rise or fall independently, an upper electrode 180 for applying power for generating plasma in the processing space PZ, a chuck 190 located at the lower portion of the processing space PZ and having a lower electrode 190A for generating plasma and a cooling plate 190B having a cooling channel 170B through which a refrigerant can flow, a heater 130 for providing thermal energy to the processing space PZ, a fluid supply port 140 for supplying fluid to the processing space PZ, a fluid discharge port 150 for discharging fluid remaining in the processing space PZ to the outside, and a controller 160 for controlling the process treatment of the substrate W.

[0090] Fig.10 The chamber 110, the chuck pin 120, the heater 130, the fluid supply port 140, the fluid discharge port 150, and the controller 160 may be configured as described with reference to FIG. Figure 1 The heat treatment apparatus 100 described above is the same as that described above. However, the fluid supply port 140 and the fluid discharge port 150 are not only cooling fluid CF, but also can supply and discharge processing gas for plasma processing. The upper electrode 180 and the lower electrode 190A form an electromagnetic field inside the processing space PZ using power provided by the upper RF power supply 182 and the lower RF power supply 192, respectively. Plasma can be generated in the processing space PZ by the electromagnetic field formed by the upper electrode 180 and the lower electrode 190A.

[0091] According to an embodiment of the present invention, a plasma treatment step S1110 may be performed on the substrate W, and a heat treatment step S1120 may be performed after the plasma treatment step S1110. In the heat treatment step S1120, a heating process and a cooling process may be performed on the substrate W.

[0092] According to an embodiment of the present invention, the controller 160 can supply power to the upper electrode 180 and the lower electrode 190A to perform plasma treatment on the substrate W, and use the heater 130 to perform heat treatment on the substrate W, and if the heat treatment is completed, the height of the chuck pin 120 is adjusted so that the substrate W is maintained in an inclined posture, and the cooling fluid is supplied toward the substrate W in the inclined posture through the fluid supply port.

[0093] According to the present invention, the controller 160 can control Figures 4 to 7 The height of the chuck pin 120 is increased to improve the cooling efficiency of the substrate W. Figure 6As shown, the controller 160 can lower the chuck pin 120-1 that is closest to the fluid supply port 140 among the plurality of chuck pins 120. In addition, the controller 160 can confirm the position of the cutout portion Wn of the substrate W and lower the chuck pin 120-1 that is closest to the fluid discharge port 150 among the plurality of chuck pins 120 while being in a non-contact state with the cutout portion Wn of the substrate W. Figure 7 As shown, the controller 160 can raise the chuck pins 120-2 and 120-3 that are most adjacent to the fluid outlet 150 among the plurality of chuck pins 120. In addition, the controller 160 can confirm the position of the cutout portion Wn of the substrate W and raise the chuck pins 120-2 and 120-3 that are most adjacent to the fluid outlet 150 while the cutout portion Wn of the substrate W is in a non-contact state among the plurality of chuck pins 120.

[0094] This embodiment and the drawings attached to this specification only clearly indicate a part of the technical concept included in the present invention. It is obvious that modifications and specific embodiments that can be easily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention are all included in the scope of rights of the present invention.

[0095] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, but rather to the appended claims. All concepts that are equivalent to or equivalently modified to the claims belong to the scope of the concept of the present invention.

Claims

1. A heat treatment device, in, include: a chamber having a processing space therein; A plurality of chuck pins support the substrate from below and are configured to rise or fall independently; a heater for providing heat energy to the processing space; a fluid supply port for supplying fluid to the processing space; A fluid discharge port for discharging the fluid remaining in the processing space to the outside; as well as a controller to control the processing of the substrate, The controller heats the substrate using the heater, and if the heating process of the substrate is completed, adjusts the height of the chuck pins so that the substrate is maintained in an inclined posture, and supplies cooling fluid toward the inclined substrate through the fluid supply port.

2. The heat treatment device according to claim 1, in, The chuck pins are constituted in three pieces and are arranged at equal intervals from each other.

3. The heat treatment device according to claim 1, in, The chuck pin is composed of quartz material.

4. The heat treatment device according to claim 1, in, The chuck pin comprises: Main body; an inner support portion located on the inner side of the upper surface of the main body portion and supporting the lower surface of the substrate; and The outer supporting portion is located on the outer side of the upper surface of the main body portion and supports the edge side of the substrate.

5. The heat treatment device according to claim 4, in, The inner supporting portion has a triangular pyramid shape that becomes narrower toward the upper portion.

6. The heat treatment device according to claim 4, in, The outer supporting portion has a side wall which is a plane in the vertical direction and a head portion which extends from the side wall and becomes narrower toward the upper portion.

7. The heat treatment device according to claim 1, in, The controller lowers a chuck pin, among the plurality of chuck pins, that is most adjacent to the fluid supply port.

8. The heat treatment device according to claim 1, in, The controller confirms the position of the cutout portion of the substrate and lowers a chuck pin, among the plurality of chuck pins, which is most adjacent to the fluid supply port while being in a non-contact state with the cutout portion of the substrate.

9. The heat treatment device according to claim 1, in, The controller raises a chuck pin, among the plurality of chuck pins, that is most adjacent to the fluid discharge port.

10. The heat treatment device according to claim 1, in, The controller confirms the position of the cutout portion of the substrate and raises a chuck pin, among the plurality of chuck pins, which is most adjacent to the fluid discharge port while being in a non-contact state with the cutout portion of the substrate.

11. The heat treatment device according to claim 1, in, The heat treatment device further includes a cooling plate disposed at a lower portion of the chamber and having a through hole through which the chuck pin can pass and a cooling flow path through which a coolant can flow.

12. The heat treatment device according to claim 1, in, The fluid supply port is located at an upper edge of the chamber.

13. The heat treatment device according to claim 12, in, The fluid discharge port is located at a lower edge of the chamber on an opposite side of the fluid supply port.

14. A heat treatment method, performed by a heat treatment device, in, The heat treatment device comprises: a chamber having a processing space therein; A plurality of chuck pins support the substrate and are configured to rise or fall independently; a heater for providing heat energy to the processing space; a fluid supply port for supplying fluid to the processing space; a fluid discharge port for discharging the fluid remaining in the processing space to the outside; and a controller to control the processing of the substrate, The heat treatment method comprises: a step of heating the substrate using the heater; and If the heating treatment of the substrate is completed, the step of cooling the substrate is performed. The step of cooling the substrate comprises: a step of adjusting the height of the chuck pins so that the substrate is maintained in an inclined posture; and The step of supplying a cooling fluid through the fluid supply port toward the substrate in the inclined posture.

15. The heat treatment method according to claim 14, in, The step of controlling the height of the chuck pin comprises: The step of lowering a chuck pin among the plurality of chuck pins that is most adjacent to the fluid supply port.

16. The heat treatment method according to claim 14, in, The step of controlling the height of the chuck pin comprises: a step of confirming the position of the cutout portion of the substrate; and A step of lowering a chuck pin, among the plurality of chuck pins, which is most adjacent to the fluid supply port while being in a non-contact state with the cutout portion of the substrate.

17. The heat treatment method according to claim 14, in, The step of controlling the height of the chuck pin includes the step of raising a chuck pin, among the plurality of chuck pins, that is most adjacent to the fluid discharge port.

18. The heat treatment method according to claim 14, in, The step of controlling the height of the chuck pin comprises: a step of confirming the position of the cutout portion of the substrate; and A step of raising a chuck pin, among the plurality of chuck pins, which is most adjacent to the fluid discharge port while being in a non-contact state with the cutout portion of the substrate.

19. A substrate processing device, in, include: A loading port for receiving a container containing a plurality of substrates; A processing module, performing a process for the substrate; as well as a transfer module for temporarily storing the substrate taken out from the container and transferring the substrate to the processing module, The processing module comprises: a chamber having a processing space therein; A plurality of chuck pins support the substrate and are configured to rise or fall independently; an upper electrode to which power for generating plasma in the processing space is applied; A chuck is located at the lower part of the processing space and has a lower electrode for generating the plasma and a cooling plate formed with a cooling flow path for a coolant to flow; a heater for providing heat energy to the processing space; a fluid supply port for supplying fluid to the processing space; a fluid discharge port for discharging the fluid remaining in the processing space to the outside; and A controller for controlling the process of the substrate, The controller supplies power to the upper electrode and the lower electrode to perform plasma treatment on the substrate, and uses the heater to perform heat treatment on the substrate. If the heat treatment is completed, the height of the chuck pin is adjusted to keep the substrate in an inclined posture, and a cooling fluid is supplied toward the inclined substrate through the fluid supply port.

20. The substrate processing apparatus according to claim 19, in, The controller confirms the position of the cutout portion of the substrate and lowers a chuck pin, among the plurality of chuck pins, which is most adjacent to the fluid supply port while being in a non-contact state with the cutout portion of the substrate.

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