Power amplifier and radio frequency front-end module

Abstract

The invention discloses a power amplifier which comprises a first amplification transistor, a first impedance conversion circuit and a transformer, the transformer comprises a first winding and a second winding which are mutually coupled, and the first impedance conversion circuit comprises a first passive element and a second passive element. The first end of the first passive element is connected to the output end of the first amplification transistor, the second end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected with the first passive element, and the second end of the second passive element is grounded; the second end of the first winding is connected to a first potential end, the first end of the second winding is connected to a signal output end, the second end of the second winding is grounded, and the first winding and the second winding are wound on the same metal layer; therefore, impedance matching of the power amplifier is better realized while other performances and areas are ensured.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a power amplifier and a radio frequency front-end module. Background Art

[0002] Power amplifiers are widely used in fields such as communications, broadcasting, radar, industrial processing, medical instruments, and scientific research. At present, with the popularization of smart mobile terminals, in order for RF power amplifiers to effectively transmit signals, the impedance matching of RF power amplifiers must be guaranteed. However, in order to meet the performance indicators of impedance matching when designing RF power amplifiers, impedance conversion is often performed by using transformers. However, due to the large area occupied by transformers, RF power amplifiers cannot simultaneously meet the requirements of area and impedance matching. Summary of the invention

[0003] The embodiments of the present invention provide a power amplifier and a radio frequency front-end module to solve the problem that the power amplifier cannot meet both the area and impedance matching requirements at the same time.

[0004] A power amplifier includes a first amplifying transistor, a first impedance conversion circuit and a transformer, wherein the transformer includes a first winding and a second winding coupled to each other, the first impedance conversion circuit includes a first passive element and a second passive element, the first end of the first passive element is connected to the output end of the first amplifying transistor, the second end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded; the second end of the first winding is connected to a first potential end, the first end of the second winding is connected to a signal output end, and the second end of the second winding is grounded, wherein the first winding and the second winding are wound on the same metal layer.

[0005] Furthermore, the inductance ratio of the first winding and the second winding ranges from [1:1 to 1:3].

[0006] Furthermore, the inductance ratio of the first winding and the second winding ranges from [1:1.5 to 1:2.2].

[0007] Furthermore, the turns ratio of the first winding to the second winding is in the range of [1:1 to 1:3]

[0008] Further, the difference between the impedance of the first end of the first winding and the impedance of the second end of the second winding is in the range of [25 ohms to 40 ohms].

[0009] Further, the first winding includes a first primary coil, the second winding includes a first secondary coil and a second secondary coil, the first end of the first secondary coil is connected to the ground terminal, the second end of the first secondary coil is connected to the first end of the second secondary coil through a jumper, the second end of the second secondary coil is connected to the signal output terminal, the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil.

[0010] Further, the first passive element is a first inductor, the second passive element is a first capacitor, the first end of the first inductor is connected to the output end of the first amplifying transistor, the second end of the first inductor is connected to the first end of the first winding, the first end of the first capacitor is connected to the first end or the second end of the first inductor, and the second end of the first capacitor is grounded.

[0011] Further, the first passive element is a first capacitor, the second passive element is a first inductor, the first end of the first capacitor is connected to the output end of the first amplifying transistor, the second end of the first capacitor is connected to the first end of the first winding, the first end of the first inductor is connected to the first end or the second end of the first capacitor, and the second end of the first inductor is grounded.

[0012] Furthermore, the power amplifier also includes a second inductor, which is connected in series with the first capacitor and is configured to resonate at a first frequency, wherein a first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

[0013] Furthermore, the first ratio is 3.

[0014] Furthermore, the power amplifier also includes a first series resonant circuit, a first end of the first series resonant circuit is connected to the output end of the first amplifying transistor, a second end of the first series resonant circuit is grounded, and the first series resonant circuit is configured to resonate at a second frequency, wherein a second ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

[0015] Furthermore, the second ratio is 2.

[0016] Furthermore, the first series resonant circuit includes a third inductor and a third capacitor connected in series.

[0017] Furthermore, the power amplifier also includes a second capacitor, a first end of the second capacitor is connected to the second end of the first passive element, a second end of the second capacitor is connected to the first end of the first winding, and the first potential end is a ground end, or a first end of the second capacitor is connected to the second end of the first winding, a second end of the second capacitor is grounded, and the first potential end is a power supply end.

[0018] A radio frequency front-end module includes a first amplifying transistor, a first impedance conversion circuit and a transformer, wherein the transformer includes a first winding and a second winding coupled to each other, the first amplifying transistor is connected to the first end of the first winding through the first impedance conversion circuit, the second end of the first winding is connected to a first potential end, the first end of the second winding is configured to output a radio frequency signal, and the second end of the second winding is grounded, wherein the first impedance conversion circuit is configured so that the impedance of the output end of the first amplifying transistor is less than the impedance of the first end of the first winding, and the inductance ratio of the first winding to the second winding is in the range of [1:1.5 to 1:2.2].

[0019] Further, the first impedance conversion circuit includes a first passive element and a second passive element, the first end of the first passive element is connected to the output end of the first amplifying transistor, the first end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded;

[0020] Furthermore, the first winding and the second winding are wound on the same metal layer.

[0021] Further, the first winding includes a first primary coil, the second winding includes a first secondary coil and a second secondary coil, the first end of the first secondary coil is connected to the ground terminal, the second end of the first secondary coil is connected to the first end of the second secondary coil through a jumper, the second end of the second secondary coil is connected to the signal output terminal, the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil.

[0022] Further, the first passive element is a first inductor, the second passive element is a first capacitor, the first end of the first inductor is connected to the output end of the first amplifying transistor, the second end of the first inductor is connected to the first end of the first winding, the first end of the first capacitor is connected to the first end or the second end of the first inductor, and the second end of the first capacitor is grounded.

[0023] Furthermore, the first winding 10 comprises a first primary coil (101) and a second primary coil (102) connected in parallel, the second winding 20 comprises a first secondary coil (210), a second secondary coil (220) and a third secondary coil (230) connected in series in sequence, and the first primary coil (101) is arranged around the outer periphery of the second primary coil (102);

[0024] The first secondary coil (210) (outer) is wound around the outer circumference of the first primary coil, the second secondary coil (220) (middle) is wound around the gap formed by the first primary coil and the second primary coil; and the third secondary coil (230) (inner) is wound around the inner circumference of the second primary coil.

[0025] Furthermore, the first chip also includes a second capacitor C11, a first end of the second capacitor C11 is connected to the output end of the first amplifying crystal 10, a second end of the second capacitor C11 is connected to the first end 1101 of the first primary coil through a first wire bonding 2001, and to the first end 1101 of the second primary coil through a second wire bonding 2002.

[0026] Furthermore, the first end of the first secondary coil is connected to the ground end and is located outside the surrounding area defined by the first primary coil, and the second end of the third secondary coil is connected to the signal output end and is located within the surrounding area defined by the second primary coil.

[0027] Furthermore, the first chip further includes a fourth capacitor 440 , a first end of the first secondary coil is connected to a first end of the fourth capacitor 440 through a third wire bonding 37 , and a second end of the fourth capacitor is grounded.

[0028] Furthermore, the first end of the first secondary coil is connected to the signal output end and is located outside the surrounding area defined by the first primary coil, and the second end of the third secondary coil is connected to the ground end and is located within the surrounding area defined by the second primary coil.

[0029] Furthermore, the RF front-end module also includes a fourth capacitor 440 arranged on the substrate, the first end of the fourth capacitor 440 is connected to the first end of the first secondary coil, and the second end of the fourth capacitor is grounded, or the first end of the fourth capacitor is connected to the first end of the first secondary coil, and the second end of the fourth capacitor is connected to the signal output end.

[0030] A radio frequency front-end module comprises a substrate and a first chip and a transformer arranged on the substrate, wherein the first chip comprises a first amplifying transistor, a first capacitor and a first pad; the first balun comprises a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to a second pad connected to the substrate through a first wire, the second pad is connected to a first end of the first winding, the second end of the first winding is connected to a first potential end, the first end of the second winding is connected to a signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, the second end of the first capacitor is connected to a ground end, wherein the first winding and the second winding are wound on the same metal layer.

[0031] Further, the first lead and the first capacitor form an impedance conversion circuit, which is configured to make the impedance of the output end of the first amplifying transistor smaller than the impedance of the first end of the first winding.

[0032] Furthermore, the first chip further includes a third pad, the second end of the first capacitor is connected to the third pad, and the third pad is bonded to a ground terminal through a second wire.

[0033] Furthermore, the first chip also includes a third capacitor and a fourth pad, the first end of the third capacitor is connected to the output end of the first amplifying transistor, the second end of the third capacitor is connected to the fourth pad, and the fourth pad is bonded to the ground end through a third lead.

[0034] Furthermore, it also includes a second capacitor arranged on the substrate, the first end of the second capacitor is connected to the second solder pad, the second end of the second capacitor is connected to the first end of the first winding, and the first potential end is the ground end, or the first end of the second capacitor is connected to the second end of the second winding, the second end of the second capacitor is grounded, and the first potential end is the power supply end.

[0035] A radio frequency front-end module comprises a substrate and a first chip and a transformer arranged on the substrate, wherein the first chip comprises a first amplifying transistor, a first capacitor and a first pad; the first balun comprises a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to a second pad connected to the substrate through a first wire, the second pad is connected to a first end of the first winding, the second end of the first winding is connected to a first potential end, the first end of the second winding is connected to a signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, and the second end of the first capacitor is connected to a ground end, wherein the inductance ratio of the first winding to the second winding is in the range of [1:1.5 to 1:2.2].

[0036] The power amplifier includes a first amplifying transistor, a first impedance conversion circuit and a transformer, the transformer includes a first winding and a second winding coupled to each other, the first impedance conversion circuit includes a first passive element and a second passive element, the first end of the first passive element is connected to the output end of the first amplifying transistor, the second end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded; the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded, wherein the first winding and the second winding are wound on the same metal layer; in this embodiment, at least one first-order first impedance conversion circuit is connected between the output end of the first amplifying transistor and the input end of the transformer, the first impedance conversion circuit includes a first passive element and a second passive element, and the first impedance conversion circuit can convert the impedance of the input end of the transformer to meet the low impedance requirement of the output end of the first amplifying transistor, thereby solving the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby better realizing the impedance matching of the power amplifier while ensuring other performance and area of ​​the transformer. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0038] Figure 1 is a circuit diagram of a power amplifier in one embodiment of the present invention;

[0039] Figure 2 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0040] Figure 3 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0041] Figure 4 is a circuit diagram of a power amplifier in one embodiment of the present invention;

[0042] Figure 5 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0043] Figure 6 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0044] Figure 7 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0045] Figure 8 is another circuit diagram of a power amplifier in one embodiment of the present invention;

[0046] Fig. 9 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0047] Fig.10 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0048] Fig.11 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0049] Fig.12 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0050] Fig.13 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0051] Fig.14 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0052] Fig.15 is another circuit diagram of a radio frequency front-end module in one embodiment of the present invention.

[0053] In the figure, 10, the first amplifying transistor; 11, the first impedance conversion circuit; T1, the transformer; 111, the first passive component; 112, the second passive component; 10, the first winding; 101, the first primary coil; 102, the second primary coil; 20, the second winding; 210, the first secondary coil; 220, the second secondary coil; 230, the third secondary coil; S23, the jumper; L31, the second inductor; 20, the first series resonant circuit; L21, the third inductor; C21, the third capacitor; C11, the second capacitor; 200, the first chip; 100, the substrate; L11, the fourth inductor; 440, the fourth capacitor. DETAILED DESCRIPTION

[0054] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0055] It should be understood that the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0056] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0057] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0058] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present invention. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising" when used in this specification determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0059] In order to fully understand the present invention, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present invention. The preferred embodiments of the present invention are described in detail below, but in addition to these detailed descriptions, the present invention may also have other implementations.

[0060] A power amplifier, such as Figure 1 As shown, a first amplifying transistor 10, a first impedance conversion circuit 11 and a transformer T1, the transformer T1 includes a first winding and a second winding coupled to each other, the first impedance conversion circuit 11 includes a first passive element 111 and a second passive element 112, the first end of the first passive element 111 is connected to the output end of the first amplifying transistor 10, the second end of the first passive element 111 is connected to the first end of the first winding, the first end of the second passive element 112 is connected to the first passive element 111, and the second end of the second passive element 112 is grounded; the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded, wherein the first winding and the second winding are wound on the same metal layer.

[0061] Wherein, the first amplifier transistor 10 is used to amplify the input signal and output the amplified signal. The first amplifier transistor 10 can be any type of transistor such as a bipolar transistor or a field effect transistor. For example: the first amplifier transistor 10 is a heterojunction bipolar transistor (HBT: Heterojunction Bipolar Transistor), the first amplifier transistor 10 is formed by connecting a plurality of heterojunction bipolar transistors in parallel or in series, and the first power amplifier transistor 10 is a heterojunction bipolar transistor implemented using a GaAs process. In at least one embodiment, the signal input terminal provides an input signal to the input terminal (base) of the first amplifier transistor 10, the emitter of the first amplifier transistor 10 is grounded, and the output terminal (collector) of the first amplifier transistor 10 outputs the amplified signal.

[0062] The first amplifying transistor 10 may be any amplifying stage in a power amplifier, for example, the amplifying stage may be any amplifying stage in a driving stage, an intermediate stage or an output stage.

[0063] Wherein, the first impedance conversion circuit 11 includes a first passive element 111 and a second passive element 112. The first passive element 111 may be an inductor (may be a physical inductor or a specific structure equivalent to an inductor, etc.) or a capacitor (may be a physical capacitor or a specific structure equivalent to a capacitor, etc.). The second passive element 112 may be a capacitor (may be a physical capacitor or a specific structure equivalent to a capacitor, etc.) or an inductor (may be a physical inductor or a specific structure equivalent to an inductor, etc.). Optionally, the first end of the first passive element 111 may be directly connected to the output end of the first amplifying transistor 10, or may be indirectly connected to the output end of the first amplifying transistor 10 (for example, connected to the output end of the first amplifying transistor 10 through other passive elements). Similarly, the second end of the first passive element 111 may be directly connected to the first end of the first winding, or may be indirectly connected to the first end of the first winding (for example, connected to the output end of the first amplifying transistor 10 through other passive elements).

[0064] In a specific embodiment, the first end of the second passive component 112 is connected to the first passive component 111 by connecting the first end of the second passive component 112 to the first end of the first passive component 111, or by connecting the first end of the second passive component 112 to the second end of the first passive component 111; the second end of the second passive component 112 is grounded.

[0065] In a specific embodiment, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded. The first potential end may be a ground end or a power supply end. The first end of the second winding may be directly connected to the signal output end or indirectly connected to the signal output end through other components / circuits (e.g., matching circuit, filter circuit).

[0066] In a specific embodiment, the transformer T1 includes a first winding and a second winding coupled to each other, and the first winding and the second winding are wound on the same metal layer, that is, the first winding and the second winding are coupled on the same side of the layer. The first winding and the second winding are wound on the same metal layer, which can be the same metal layer wound on the substrate or the same metal layer wound on the bare core. It can be understood that if the coil of the first winding and the coil of the second winding need to be connected by a jumper during the winding process, the jumper can be set in other metal layers.

[0067] In order to optimize the bandwidth performance of the power amplifier and reduce the loss, the present embodiment adopts a transformer to realize impedance conversion. Since the first winding and the second winding are wound on the same metal layer, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying too large an area, the turns ratio of the second winding and the first winding needs to be set to be relatively small, resulting in a relatively small impedance conversion that can be realized by the transformer, and thus the low impedance requirement (for example: 3 ohms) of the output end of the first amplifying transistor cannot be met. In the present embodiment, at least one first-order first impedance conversion circuit is connected between the output end of the first amplifying transistor and the input end of the transformer. The first impedance conversion circuit includes a first passive element and a second passive element. The first impedance conversion circuit can convert the impedance of the input end of the transformer, so that the impedance of the output end of the first amplifying transistor is less than the impedance of the input end of the transformer, so as to meet the low impedance requirement of the output end of the first amplifying transistor, thereby solving the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby better realizing the impedance matching of the power amplifier while ensuring other performances and area of ​​the transformer, and thus achieving the performance of large bandwidth and low loss.

[0068] In this embodiment, the power amplifier includes a first amplifying transistor, a first impedance conversion circuit and a transformer, the transformer includes a first winding and a second winding coupled to each other, the first impedance conversion circuit includes a first passive element and a second passive element, the first end of the first passive element is connected to the output end of the first amplifying transistor, the second end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded; the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded, wherein the first winding and the second winding Winded on the same metal layer; this embodiment connects at least one first-order first impedance conversion circuit between the output end of the first amplifying transistor and the input end of the transformer, and the first impedance conversion circuit includes a first passive element and a second passive element. The first impedance conversion circuit can convert the impedance of the input end of the transformer, so that the impedance of the output end of the first amplifying transistor is less than the impedance of the input end of the transformer, so as to meet the low impedance requirement of the output end of the first amplifying transistor, solves the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby better realizing the impedance matching of the power amplifier while ensuring other performance and area of ​​the transformer, and further realizing the performance of large bandwidth and low loss.

[0069] In a specific embodiment, the inductance ratio of the first winding to the second winding ranges from 1:1 to 1:3. For example, the inductance ratio of the first winding to the second winding may be 1:1.5, 1:2, or 1:2.5.

[0070] Specifically, the impedance conversion ratio that can be achieved by the transformer is related to the inductance ratio of the first winding and the second winding. Since the first winding and the second winding are wound on the same metal layer, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessively large area, the inductance ratio of the first winding and the second winding must meet certain setting requirements. In this embodiment, the inductance ratio of the first winding and the second winding is in the range of [1:1 to 1:3] to ensure the coupling coefficient between the first winding and the second winding of the transformer and other performance requirements.

[0071] In this embodiment, the inductance ratio range of the second winding and the first winding is [1:1-1:3]. Since the transformer and the first impedance conversion circuit participate in impedance conversion together in this embodiment, by setting the inductance ratio range of the second winding and the first winding to [1:1-1:3], not only can the coupling coefficient between the first winding and the second winding be guaranteed and the transformer's occupied area be avoided to be too large, but also the low impedance requirement of the output end of the first amplifying transistor can be met, which solves the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, and can also ensure other performances of the power amplifier.

[0072] In a specific embodiment, the inductance ratio of the first winding to the second winding ranges from [1:1.5 to 1:2.2]. For example, the inductance ratio of the first winding to the second winding may be 1:1.7, 1:1.8, 1:2.2 or 1:2.4.

[0073] Specifically, the impedance conversion ratio that can be achieved by the transformer is related to the inductance ratio of the first winding and the second winding. Since the first winding and the second winding are wound on the same metal layer, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, the inductance ratio of the first winding and the second winding must meet certain setting requirements. In this embodiment, the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2], thereby ensuring the coupling coefficient between the first winding and the second winding of the transformer and other performance requirements.

[0074] In this embodiment, the inductance ratio range of the second winding and the first winding is [1:1.5~1:2.2]. Since the transformer and the first impedance conversion circuit participate in impedance conversion together in this embodiment, by setting the inductance ratio range of the second winding and the first winding to [1:1.5~1:2.2], not only can the coupling coefficient between the first winding and the second winding be guaranteed and the transformer's occupied area be avoided from being too large, but also the low impedance requirement of the output end of the first amplifying transistor can be met, thereby solving the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby improving the overall performance of the power amplifier.

[0075] In a specific embodiment, the turns ratio of the first winding to the second winding ranges from 1:1 to 1:3. For example, the turns ratio of the first winding to the second winding may be 1:1.5, 1:2, or 1:2.5.

[0076] The turns ratio of the first winding and the second winding is the ratio of the number of turns of the first winding to the number of turns of the second winding, under the premise that the line width of the first winding and the line width of the second winding and other coil parameters are the same.

[0077] Specifically, the inductance ratio of the first winding and the second winding is related to the turns ratio of the first winding and the second winding. Since the first winding and the second winding are wound on the same metal layer, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, the turns ratio of the first winding and the second winding must meet certain setting requirements. In this embodiment, the turns ratio of the first winding and the second winding is in the range of [1:1 to 1:3].

[0078] In this embodiment, the turns ratio range of the first winding and the second winding is [1:1-1:3]. Since the transformer and the first impedance conversion circuit participate in impedance conversion together in this embodiment, by setting the turns ratio range of the first winding and the second winding to [1:1-1:3], not only can the coupling coefficient between the first winding and the second winding be guaranteed and the transformer's occupied area be avoided to be too large, but also the low impedance requirement of the output end of the first amplifying transistor can be met, thereby solving the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby achieving large bandwidth and low loss performance.

[0079] In a specific embodiment, the impedance difference between the first end of the first winding and the second end of the second winding is in the range of [25 ohms to 40 ohms]. For example, the impedance difference between the first end of the first winding and the second end of the second winding is 27 ohms, 30 ohms, 32 ohms, 35 ohms or 38 ohms, etc.

[0080] Specifically, since the first winding and the second winding are wound on the same metal layer, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying too large an area, the impedance conversion that can be achieved by the first winding and the second winding is relatively small. In this embodiment, the impedance difference between the first end of the first winding and the second end of the second winding is in the range of [25 ohms to 40 ohms].

[0081] In a specific embodiment, the impedance of the second end of the second winding is generally a preset 50 ohms. After the impedance conversion of the transformer, the impedance of the first end of the first winding can be [10 ohms to 25 ohms], that is, the impedance difference between the first end of the first winding and the second end of the second winding is in the range of [25 ohms to 40 ohms].

[0082] In this embodiment, the impedance difference between the first end of the first winding and the second end of the second winding is in the range of [25 ohms to 40 ohms]. Since the transformer and the first impedance conversion circuit participate in impedance conversion together in this embodiment, the impedance difference between the first end of the first winding and the second end of the second winding is in the range of [25 ohms to 40 ohms], which can not only ensure the coupling coefficient between the first winding and the second winding and avoid the transformer from occupying too large an area, but also meet the low impedance requirement of the output end of the first amplifying transistor, solve the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, and thus achieve the performance of large bandwidth and low loss.

[0083] In a specific embodiment, refer to the following Fig.12 As shown, the first winding includes a first primary coil S11, and the second winding includes a first secondary coil S21 and a second secondary coil S22. The first end of the first secondary coil S21 is connected to the ground end, the second end of the first secondary coil S21 is connected to the first end of the second secondary coil S22 through a jumper S23, and the second end of the second secondary coil S22 is connected to the signal output end. The first secondary coil S21 is wound on the inner side of the first primary coil S11, and the second secondary coil S22 is wound on the outer side of the first primary coil S11.

[0084] The number of the jumper wires S23 may be at least one. As the more jumper wires S23 there are, the smaller the equivalent inductance after they are connected in parallel is. Therefore, in order to avoid the inductance of the jumper wires S23 being too large and affecting the performance of the transformer, in this embodiment, the number of the jumper wires S23 is greater than or equal to 3.

[0085] In at least one embodiment, the first end of the first secondary coil S21 can be bonded to the ground terminal through a wire, or can be directly connected to the ground through a through hole. The two ends of the jumper S23 can be connected to the second end of the first secondary coil S21 and the first end of the second secondary coil S22 through pads, respectively, and the jumper S23 can be set in other metal layers.

[0086] In this embodiment, the first winding includes a first primary coil S11, and the second winding includes a first secondary coil S21 and a second secondary coil S22, and the first secondary coil S21 is wound on the inner side of the first primary coil S11, and the second secondary coil S22 is wound on the outer side of the first primary coil S11, so that the first secondary coil S21 and the second secondary coil S22 are coupled to the first primary coil S11 on the same layer side, thereby improving the coupling coefficient of the transformer.

[0087] In a specific embodiment, refer to the following Figure 2 and Figure 4 As shown, the first passive component 111 is a first inductor, the second passive component 112 is a first capacitor, the first end of the first inductor is connected to the output end of the first amplifying transistor, the second end of the first inductor is connected to the first end of the first winding, and the first end of the first capacitor is connected to the first end or the second end of the first inductor. The second end of the first capacitor is grounded. Whether the first end of the first capacitor is connected to the first end of the first inductor or the second end of the first inductor can be customized according to the actual impedance of the first end of the first winding.

[0088] In at least one embodiment, the first capacitor may be a single capacitor, or a plurality of capacitors connected in series or in parallel. The first capacitor may be a chip capacitor or a stacked capacitor. The first inductor may be a single inductor, or a plurality of inductors connected in series or in parallel. The first inductor may be a winding inductor, a chip inductor, or an inductor implemented by a jumper or a binding wire.

[0089] In a specific embodiment, the first inductor and the first capacitor form a first impedance conversion circuit, and the first inductor is connected between the output end of the first amplifying transistor and the first end of the first winding, and the first capacitor is connected between the first end or the second end of the first inductor and the ground end. The first impedance conversion circuit is configured to convert the impedance of the first end of the first winding so that the impedance of the output end of the first amplifying transistor meets the low impedance requirement (for example: a low impedance requirement of 3 ohms), thereby better achieving impedance matching while ensuring other performances of the power amplifier.

[0090] It can be understood that since a binding wire or a jumper wire is required to connect the output end of the first amplifier transistor and the first end of the first winding, this embodiment can use the inductance equivalent to the binding wire or the jumper wire when connecting the output end of the first amplifier transistor and the first end of the first winding as the first passive element 111, thereby ensuring impedance matching while reducing components to reduce circuit losses, thereby optimizing the bandwidth performance of the power amplifier.

[0091] In a specific embodiment, refer to the following Figure 3As shown, the first passive component 111 is a first capacitor, the second passive component 112 is a first inductor, the first end of the first capacitor is connected to the output end of the first amplifying transistor 10, the second end of the first capacitor is connected to the first end of the first winding, and the first end of the first inductor is connected to the first end or the second end of the first capacitor. The second end of the first inductor is grounded. Whether the first end of the first inductor is connected to the first end of the first capacitor or the second end of the first capacitor can be customized according to the actual impedance of the first end of the first winding.

[0092] In at least one implementation manner, the first capacitor and the first inductor may be implemented in the same manner as in the above embodiment, and are not described repeatedly herein.

[0093] In a specific embodiment, the first capacitor and the first inductor form a first impedance conversion circuit, and the first capacitor is connected between the output end of the first amplifying transistor and the first end of the first winding, and the first inductor is connected between the first end or the second end of the first capacitor and the ground end. The first impedance conversion circuit is configured to convert the impedance of the first end of the first winding so that the impedance of the output end of the first amplifying transistor meets the low impedance requirement (for example: a low impedance requirement of 3 ohms), thereby better achieving impedance matching while ensuring other performances of the power amplifier, thereby optimizing the bandwidth performance of the power amplifier.

[0094] In a specific embodiment, refer to the following Figure 5 As shown, the power amplifier also includes a second inductor L31, which is connected in series with the first capacitor, for example: the first end of the first capacitor is connected to the first inductor, the second end of the first capacitor is connected to the first end of the second inductor L31, and the second end of the second inductor L31 is grounded; the second inductor L31 and the first capacitor are configured to resonate at a first frequency, wherein a first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

[0095] In at least one embodiment, the first frequency is set to f 1 ,but

[0096] Among them, C 1 is the capacitance value of the first capacitor 112, L 1 is the inductance value of the second inductor L31;

[0097] The first frequency f 1 The first ratio of the frequency of the fundamental wave signal of the power amplifier is greater than or equal to 2; that is, f 1≥ 2f0 , f 0 is the frequency of the fundamental signal of the power amplifier.

[0098] In at least one embodiment, the first frequency may be twice, three times, four times, etc., the frequency of the fundamental wave signal of the power amplifier.

[0099] In this embodiment, by making the second inductor L31 and the first capacitor 112 resonate at a first frequency, and the first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, not only the harmonics of the power amplifier can be suppressed, but also the impedance matching of the harmonics of the power amplifier can be achieved. For example, if the first frequency is twice the frequency of the fundamental signal of the power amplifier, the second harmonic of the power amplifier can be suppressed, and the impedance matching of the second harmonic of the power amplifier can be achieved.

[0100] It can be understood that since the second inductor L31 and the first capacitor 112 resonate at the first frequency, and the first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, therefore, for the fundamental signal, the second inductor L31 and the first capacitor 112 are ultimately equivalent to only one first capacitor 112, that is, the second inductor L3 has no effect on the fundamental signal. Therefore, it can not only suppress the harmonics of the power amplifier and achieve impedance matching of the harmonics of the power amplifier, but also not affect the fundamental impedance matching of the power amplifier.

[0101] In a specific embodiment, the first ratio is 3.

[0102] In at least one embodiment, the third-order harmonic of the power amplifier has a greater impact on the entire circuit. Therefore, in this embodiment, the second inductor L31 and the first capacitor are configured to resonate at 3 times the frequency of the fundamental signal of the power amplifier, thereby suppressing the third harmonic of the power amplifier and satisfying the impedance matching of the third harmonic of the power amplifier without affecting the fundamental impedance matching of the power amplifier.

[0103] In a specific embodiment, refer to the following Figure 7 As shown, the power amplifier also includes a first series resonant circuit 20, a first end of the first series resonant circuit 20 is connected to the output end of the first amplifying transistor 10, a second end of the first series resonant circuit 20 is grounded, and the first series resonant circuit 20 is configured to resonate at a second frequency, wherein a second ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

[0104] In at least one embodiment, the second frequency is set to f2 ,but

[0105] Among them, C 2 is the capacitance value in the first series resonant circuit 20, L 2 is the inductance value in the first series resonant circuit 20;

[0106] The first frequency f 2 The first ratio of the frequency of the fundamental wave signal of the power amplifier is greater than or equal to 2; that is, f 2 2f 0 , f 0 is the frequency of the fundamental signal of the power amplifier.

[0107] In at least one embodiment, the second frequency may be double, triple, quadruple, etc., of the frequency of the fundamental wave signal of the power amplifier.

[0108] This embodiment makes the first series resonant circuit 20 resonate at the second frequency, and the second ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, so that not only the harmonics of the power amplifier can be suppressed, but also the impedance matching of the harmonics of the power amplifier can be achieved.

[0109] In a specific embodiment, the first ratio is 2.

[0110] In at least one embodiment, the second-order harmonic of the power amplifier has a greater impact on the entire circuit. Therefore, in this embodiment, the first series resonant circuit 20 resonates at twice the frequency of the fundamental signal of the power amplifier, thereby suppressing the second harmonic of the power amplifier and satisfying the impedance matching of the second harmonic of the power amplifier without affecting the fundamental impedance matching of the power amplifier.

[0111] In a specific embodiment, refer to the following Figure 7 As shown, the first series resonant circuit 20 includes a third inductor L21 and a third capacitor C21 connected in series.

[0112] Specifically, the first end of the third inductor L21 is connected to the output end of the first amplifying transistor 10, the second end of the third inductor L21 is connected to the first end of the third capacitor C21, and the second end of the third capacitor C21 is grounded. Alternatively, the first end of the third capacitor C21 is connected to the output end of the first amplifying transistor 10, the second end of the third capacitor C21 is connected to the first end of the third inductor L21, and the second end of the third inductor L21 is grounded.

[0113] In this embodiment, the third inductor L21 and the third capacitor C21 are configured to resonate at a second frequency, wherein a second ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2; thereby achieving suppression of the harmonics of the power amplifier and satisfying the impedance matching of the harmonics of the power amplifier without affecting the fundamental impedance matching of the power amplifier.

[0114] In a specific embodiment, refer to the following Figure 5 and Figure 6 As shown, the power amplifier also includes a second capacitor C11, the first end of the second capacitor C11 is connected to the second end of the first passive element 111, the second end of the second capacitor C11 is connected to the first end of the first winding, and the first potential end is the ground end, or the first end of the second capacitor C11 is connected to the second end of the first winding, the second end of the second capacitor C11 is grounded, and the first potential end is the power supply end.

[0115] In at least one embodiment, the first end of the second capacitor C11 is connected to the second end of the first passive component 111, the second end of the second capacitor C11 is connected to the first end of the first winding, and the first potential end is the ground end. The second capacitor C11 can not only block the DC signal in the amplified signal, thereby ensuring the quality of the amplified signal input into the transformer, but also participate in impedance matching.

[0116] In at least one embodiment, the first end of the second capacitor C11 is connected to the second end of the first winding, the second end of the second capacitor C11 is grounded, and the first potential end is the power supply end. Since the power supply voltage output by the power supply end needs to be transmitted to the first power amplifier crystal transistor through the first winding, the capacitor cannot be connected to the series path between the first potential end of the first winding and the first power amplifier crystal transistor. At this time, the first end of the second capacitor C11 is connected to the second end of the first winding, and the second end of the second capacitor C11 is grounded. The second capacitor C11 is a decoupling capacitor, which can stabilize the power supply voltage output by the power supply end.

[0117] This embodiment also provides a power amplifier, including a first amplifying transistor 10, a first impedance conversion circuit 11 and a transformer T1, wherein the transformer T1 includes a first winding and a second winding coupled to each other, the first amplifying transistor 10 is connected to the first end of the first winding through the first impedance conversion circuit 11, the second end of the first winding is connected to the first potential end, the first end of the second winding is configured to output a radio frequency signal, and the second end of the second winding is grounded, wherein the first impedance conversion circuit is configured to make the impedance of the output end of the first amplifying transistor smaller than the impedance of the first end of the first winding, and the inductance ratio of the first winding to the second winding is in the range of [1:1.5 to 1:2.2].

[0118] In this embodiment, the implementation method and function of the first amplifying transistor 10 are the same as those in the above embodiment, and will not be repeated here.

[0119] In a specific embodiment, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded. The first potential end may be a ground end or a power supply end. The first end of the second winding may be directly connected to the signal output end or indirectly connected to the signal output end through other components / circuits (e.g., matching circuit, filter circuit).

[0120] In at least one embodiment, the first end of the first amplifying transistor 10 connected to the first winding through the first impedance conversion circuit 11 may be directly connected to the first end of the first winding through the first impedance conversion circuit 11, or may be indirectly connected to the output end of the first amplifying transistor 10 through the first impedance conversion circuit 11. The first impedance conversion circuit 11 is a circuit capable of performing impedance conversion. Optionally, the first impedance conversion circuit 11 may be a circuit composed of at least one capacitor and at least one inductor connected in series or in parallel.

[0121] In at least one embodiment, the transformer T1 includes a first winding and a second winding coupled to each other, and the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2]; the impedance conversion ratio that can be achieved by the transformer is related to the inductance ratio of the first winding and the second winding. In this embodiment, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2], thereby ensuring the coupling coefficient between the first winding and the second winding of the transformer and other performance requirements.

[0122] In at least one embodiment, in order to optimize the bandwidth performance of the power amplifier and reduce losses, this embodiment uses a transformer to achieve impedance conversion, and in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2]. This embodiment connects at least one first-order impedance conversion circuit between the output end of the first amplifying transistor and the input end of the transformer, and the transformer and the first impedance conversion circuit participate in impedance conversion together, which can not only ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, but also meet the low impedance requirement of the output end of the first amplifying transistor, thereby solving the problem that the power amplifier cannot simultaneously take into account the area and impedance matching requirements, thereby optimizing the bandwidth performance of the power amplifier.

[0123] In a specific embodiment, the first impedance conversion circuit 11 includes a first passive element 111 and a second passive element 112, wherein the first end of the first passive element 111 is connected to the output end of the first amplifying transistor 10, the first end of the first passive element 111 is connected to the first end of the first winding, the first end of the second passive element 112 is connected to the first passive element 111, and the second end of the second passive element 112 is grounded.

[0124] In at least one embodiment, the first passive component 111 may be an inductor (which may be a physical inductor or a specific structure equivalent to an inductor, etc.) or a capacitor (which may be a physical capacitor or a specific structure equivalent to a capacitor, etc.). The second passive component 112 may be a capacitor (which may be a physical capacitor or a specific structure equivalent to a capacitor, etc.) or an inductor (which may be a physical inductor or a specific structure equivalent to an inductor, etc.). Optionally, the first end of the first passive component 111 may be directly connected to the output end of the first amplifying transistor 10, or may be indirectly connected to the output end of the first amplifying transistor 10 (for example, connected to the output end of the first amplifying transistor 10 through other passive components). Similarly, the second end of the first passive component 111 may be directly connected to the first end of the first winding, or may be indirectly connected to the first end of the first winding (for example, connected to the output end of the first amplifying transistor 10 through other passive components).

[0125] In a specific embodiment, the first end of the second passive component 112 is connected to the first passive component 111 by connecting the first end of the second passive component 112 to the first end of the first passive component 111, or by connecting the first end of the second passive component 112 to the second end of the first passive component 111; the second end of the second passive component 112 is grounded.

[0126] In a specific embodiment, the first winding and the second winding are wound on the same metal layer. That is, the first winding and the second winding are coupled on the same side of the layer. The first winding and the second winding are wound on the same metal layer, which can be the same metal layer wound on the substrate or the same metal layer wound on the bare core. It can be understood that if the coil of the first winding and the coil of the second winding need to be connected by a jumper during the winding process, the jumper can be set in other metal layers.

[0127] In this embodiment, the first winding and the second winding are wound on the same metal layer, so that the occupied area of ​​the transformer can be reduced while ensuring the coupling degree.

[0128] In a specific embodiment, refer to the following Fig.12 As shown, the first winding 10 includes a first primary coil, and the second winding 20 includes a first secondary coil and a second secondary coil, the first end of the first secondary coil is connected to the ground end, the second end of the first secondary coil is connected to the first end of the second secondary coil through a jumper, the second end of the second secondary coil is connected to the signal output end, the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil.

[0129] The number of the jumpers S23 may be at least one. As the more jumpers S23 there are, the smaller the equivalent inductance after they are connected in parallel is, in order to avoid the inductance of the jumpers S23 being too large and affecting the performance of the transformer, in this embodiment, the number of the jumpers S23 is greater than or equal to 3.

[0130] In at least one embodiment, the first end of the first secondary coil can be bonded to the ground terminal through a wire, or can be directly connected to the ground through a through hole. The two ends of the jumper can be connected to the second end of the first secondary coil and the first end of the second secondary coil through pads, respectively, and the jumper can be set on other metal layers.

[0131] In this embodiment, the first winding includes a first primary coil, and the second winding includes a first secondary coil and a second secondary coil, and the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil, so that the first secondary coil and the second secondary coil are coupled with the first primary coil on the same layer side, thereby improving the coupling coefficient of the transformer.

[0132] This embodiment also provides a radio frequency front-end module, see below Figure 9-Figure 14As shown, it includes a substrate 100 and a first chip 200 and a transformer T1 arranged on the substrate 100, the first chip 200 includes a first amplifying transistor 10, a first capacitor 112 and a first pad; the first balun includes a first winding and a second winding coupled to each other; the output end of the first amplifying transistor 10 is connected to the first pad, the first pad is bonded to the second pad connected to the substrate 100 through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor 112 is connected to the first pad or the second pad, the second end of the first capacitor is connected to the ground end, wherein the first winding and the second winding are wound on the same metal layer.

[0133] The first chip 200 may be a HBT (heterojunction bipolar transistor) chip, that is, the first chip 200 is implemented by HBT (heterojunction bipolar transistor) manufacturing process technology. The implementation method and function of the first amplifying transistor 10 and the transformer T1 in this embodiment are the same as those in the above embodiment, and will not be repeated here.

[0134] In at least one embodiment, whether the first end of the first capacitor 112 is connected to the first pad or to the second pad can be customized according to the impedance of the first end of the first winding. The first capacitor 112 and the inductance equivalent to the first lead form an impedance conversion circuit, which is used to convert the impedance of the input end of the transformer so that the impedance of the output end of the first amplifier transistor is less than the impedance of the input end of the transformer to meet the low impedance requirement of the output end of the first amplifier transistor. Among them, the number of the first leads can be one or more. It can be understood that by setting the first capacitor 112 on the first chip, the quality factor (Q value) of the power amplifier can be optimized.

[0135] In this embodiment, the equivalent inductance of the first lead when the output end of the first amplifying transistor and the first end of the first winding are connected together with the first capacitor to participate in impedance conversion, thereby ensuring impedance matching while reducing circuit components to reduce circuit losses, thereby optimizing the bandwidth performance of the power amplifier.

[0136] In this embodiment, the RF front-end module includes a substrate 100 and a first chip 200 and a transformer T1 arranged on the substrate 100, the first chip 200 includes a first amplifying transistor 10, a first capacitor 112 and a first pad; the first balun includes a first winding and a second winding coupled to each other; the output end of the first amplifying transistor 10 is connected to the first pad, the first pad is bonded to the second pad connected to the substrate 100 through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor 112 is connected to the The first pad or the second pad is connected, and the second end of the first capacitor is connected to the ground end, wherein the first winding and the second winding are wound on the same metal layer; in this embodiment, the equivalent inductance of the first lead when the output end of the first amplifying transistor and the first end of the first winding are connected jointly with the first capacitor to participate in impedance conversion, so that the impedance of the output end of the first amplifying transistor is less than the impedance of the input end of the transformer, so as to meet the low impedance requirement of the output end of the first amplifying transistor, solve the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby better realizing the impedance matching of the power amplifier while ensuring other performance and area, and thus optimizing the bandwidth performance of the power amplifier.

[0137] In a specific embodiment, refer to the following Fig.11 As shown, the first lead and the first capacitor form an impedance conversion circuit, which is configured to make the impedance of the output end of the first amplifying transistor smaller than the impedance of the first end of the first winding.

[0138] In at least one embodiment, the equivalent inductance of the first lead and the first capacitor form an impedance conversion circuit, which is configured to convert the impedance of the first end of the first winding so that the impedance of the output end of the first amplifying transistor is less than the impedance of the first end of the first winding. For example, the impedance of the first end of the first winding is 6 ohms, and after the impedance conversion circuit formed by the first lead and the first capacitor performs impedance conversion, the impedance of the output end of the first amplifying transistor is 3 ohms, so as to meet the low impedance requirement of the output end of the first amplifying transistor, thereby better achieving impedance matching of the power amplifier while ensuring other performance and area.

[0139] In a specific embodiment, the first chip further includes a third pad, the second end of the first capacitor is connected to the third pad, and the third pad is bonded to a ground terminal through a second wire.

[0140] The second lead may be arranged on the first chip or on the substrate, that is, the second end of the first capacitor is connected to the third pad, and the third pad may be bonded to the ground end through the second lead on the chip, or the third pad may be bonded to the ground end through the second lead on the substrate.

[0141] In at least one embodiment, reference Fig.13 As shown, the first capacitor and the inductor equivalent to the second lead L31 are configured to resonate at a first frequency, wherein a first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2. In at least one embodiment, the first frequency may be a double frequency, a triple frequency, a quadruple frequency, etc. of the frequency of the fundamental signal of the power amplifier. Preferably, the first frequency is a triple frequency of the frequency of the fundamental signal of the power amplifier.

[0142] In this embodiment, the equivalent inductance of the second lead and the first capacitor 112 resonate at the first frequency, and the first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, so that not only the harmonics of the power amplifier can be suppressed, but also the impedance matching of the harmonics of the power amplifier can be achieved. For example, if the first frequency is twice the frequency of the fundamental signal of the power amplifier, the second harmonic of the power amplifier can be suppressed, and the impedance matching of the second harmonic of the power amplifier can be achieved.

[0143] It can be understood that since the inductance equivalent to the second lead and the first capacitor 112 resonate at the first frequency, and the first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, therefore, for the fundamental signal, the inductance equivalent to the second lead and the first capacitor 112 are ultimately equivalent to only one first capacitor 112, that is, the inductance equivalent to the second lead has no effect on the fundamental signal. Therefore, not only can the harmonics of the power amplifier be suppressed and the impedance matching of the harmonics of the power amplifier be achieved, but the fundamental impedance matching of the power amplifier can also be not affected.

[0144] In a specific embodiment, referring to Fig.14 As shown, the first chip also includes a third capacitor C21 and a fourth pad, the first end of the third capacitor C21 is connected to the output end of the first amplifying transistor, the second end of the third capacitor C21 is connected to the fourth pad, and the fourth pad is bonded to the ground end through a third wire.

[0145] Among them, the third lead can be set on the first chip or on the substrate, that is, the second end of the third capacitor is connected to the fourth pad, the third pad can be bonded to the ground end through the third lead on the chip, or the fourth pad can be bonded to the ground end through the third lead on the substrate.

[0146] In at least one embodiment, the third capacitor C21 and the inductance equivalent to the third lead are configured to resonate at a second frequency, wherein a first ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2. In at least one implementation, the second frequency may be twice, three times, four times, etc., of the frequency of the fundamental signal of the power amplifier. Preferably, the second frequency is twice the frequency of the fundamental signal of the power amplifier.

[0147] In this embodiment, the inductance equivalent to the third lead and the third capacitor C21 are made to resonate at the second frequency, and a first ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2, thereby achieving suppression of the harmonics of the power amplifier and satisfying the impedance matching of the harmonics of the power amplifier without affecting the fundamental impedance matching of the power amplifier.

[0148] In a specific embodiment, referring to Fig.14 As shown, it also includes a second capacitor C11 disposed on the substrate, the first end of the second capacitor is connected to the second pad, the second end of the second capacitor is connected to the first end of the first winding, and the first potential end is a grounding end, or the first end of the second capacitor C11 is connected to the second end of the second winding, the second end of the second capacitor is grounded, and the second end of the first winding is connected to the power supply end. The second capacitor C11 is an SMD chip capacitor.

[0149] In at least one embodiment, the first end of the second capacitor C11 is connected to the second pad, the second end of the second capacitor C11 is connected to the first end of the first winding, the first potential end is the ground end, and the second capacitor C11 can not only block the DC signal in the amplified signal, thereby ensuring the quality of the amplified signal input into the transformer, but also participate in impedance matching.

[0150] In at least one embodiment, the first end of the second capacitor C11 is connected to the second end of the first winding, the second end of the second capacitor C11 is grounded, and the first potential end is the power supply end. Since the power supply voltage output by the power supply end needs to be transmitted to the first power amplifier crystal transistor through the first winding, the capacitor cannot be connected to the series path between the first potential end of the first winding and the first power amplifier crystal transistor. At this time, the first end of the second capacitor C11 is connected to the second end of the first winding, and the second end of the second capacitor C11 is grounded. The second capacitor C11 is a decoupling capacitor, which can stabilize the power supply voltage output by the power supply end.

[0151] In a specific embodiment, refer to the following Fig.14 and Fig.15 As shown, the first winding 10 includes a first primary coil 101 and a second primary coil 102 connected in parallel, the second winding 20 includes a first secondary coil 210, a second secondary coil 220 and a third secondary coil 230 connected in series in sequence, and the first primary coil 101 is arranged around the outer periphery of the second primary coil 102. The first secondary coil 210 is arranged around the outer periphery of the first primary coil, the second secondary coil 220 is arranged around the gap formed by the first primary coil and the second primary coil; the third secondary coil 230 is arranged around the inner periphery of the second primary coil.

[0152] In at least one implementation, the first winding 10 includes a first primary coil 101 and a second primary coil 102 connected in parallel, but is not limited to also including a third primary coil, a fourth primary coil, and multiple coils. The first end 1101 of each primary coil is configured to be connected to a first signal end (not shown in the figure), and the second end 1103 of each primary coil is configured to be grounded or connected to a power supply port (not shown in the figure).

[0153] In this embodiment, the first primary coil 101 and the second primary coil 102 are connected in parallel to each other, thereby reducing the equivalent inductance of the first winding 10, so that under the premise that the inductance of the second winding remains unchanged, the ratio of the inductance between the second winding 20 and the first winding 10 increases, thereby achieving a larger impedance conversion ratio.

[0154] In at least one implementation, the first winding 10 and the second winding are located in the same metal layer, the second winding 20 includes a first secondary coil 210, a second secondary coil 220 and a third secondary coil 230 connected in series in sequence, the second secondary coil 220 is wound around the gap formed by the first primary coil and the second primary coil; the third secondary coil 230 is wound around the inner circumference of the second primary coil, the first end 2101 of the second winding 20 is configured to be connected to a second signal end (not shown in the figure), and the second end 2103 of the second winding 20 is configured to be grounded.

[0155] Since the first secondary coil 210 in this embodiment is wound around the outer periphery of the first primary coil, the second secondary coil 220 is wound around the gap formed by the first primary coil and the second primary coil; the third secondary coil 230 is wound around the inner periphery of the second primary coil, so that each primary coil has a secondary coil that can be coupled with it, thereby ensuring the coupling coefficient between the primary coil and the secondary coil. In addition, the secondary coil and the primary coil are located in the same metal layer, which can make the transformer structure more compact, which is conducive to the miniaturization design of the RF module using the transformer structure. In addition, the secondary coil and the primary coil located in the same metal layer do not need to be bridged by a jumper in the process of realizing the coupled winding, so as to ensure the coupling degree while reducing the signal loss caused by the jumper bridge.

[0156] In a specific embodiment, refer to the following Fig.15 As shown, the first chip 200 also includes a second capacitor C11, a first end of the second capacitor C11 is connected to the output end of the first amplifying transistor 10, a second end of the second capacitor C11 is connected to the first end 1101 of the first primary coil through a first wire bonding 2001, and to the first end 1101 of the second primary coil through a second wire bonding 2002.

[0157] In at least one embodiment, a second capacitor C11 may also be integrated in the first chip 200, and the output end of the first amplifying transistor 10 is connected to the first end of the first winding through the second capacitor C11. The second capacitor C11 participates in the impedance matching of the RF module, thereby improving the signal output quality of the RF module. In this embodiment, by integrating the second capacitor C11 in the first chip 200, not only can the layout space of the substrate be saved, and there is no SMD capacitor on the substrate, making the overall layout of the RF module more compact, but also the quality factor (Q value) of the RF module can be optimized, which is beneficial to the performance design of the RF module.

[0158] In at least one embodiment, the second end of the second capacitor C11 is connected to the first end 1101 of the first primary coil through the first wire bonding 2001, and to the first end 1101 of the second primary coil through the second wire bonding 2002, that is, the first wire bonding 2001 is connected to the signal output end of the power amplifier chip 40 and the first end 1101 of the first primary coil, and the second wire bonding 2002 is connected to the signal output end of the power amplifier chip 40 and the first end 1101 of the second primary coil. The second ends of the first primary coil and the second primary coil are connected in parallel and then grounded, specifically, they can be connected to the ground on the substrate through a metal through hole, or they can be connected to the ground on the chip through a jumper. Among them, the number of the first lead and the second lead can be one or more, which is not specifically limited here.

[0159] In a specific embodiment, refer to the following Fig.15 As shown, the first end 2101 of the first secondary coil 210 is connected to the ground end and is located outside the surrounding area defined by the first primary coil, and the second end 2103 of the third secondary coil 230 is connected to the signal output end and is located within the surrounding area defined by the second primary coil.

[0160] In at least one embodiment, when the first end 2101 of the first secondary coil 210 is connected to the ground terminal and is located outside the surrounding area defined by the first primary coil, since the first end 2101 of the first secondary coil 210 is disposed adjacent to the second chip, the first end 2101 of the first secondary coil 210 can be directly or indirectly connected to the ground of the second chip through a jumper. For example, when the first end 2101 of the first secondary coil 210 is connected to the ground of the second chip through a capacitor, the capacitor can be disposed in the second chip, thereby improving the quality factor (Q value) of the transformer, and saving the layout space of the substrate, so that there is no SMD capacitor on the substrate, making the overall layout of the RF module more compact, with a smaller area, less loss, and lower cost.

[0161] In a specific embodiment, the first chip further includes a fourth capacitor 440 , a first end of the first secondary coil is connected to a first end of the fourth capacitor 440 via a third wire bonding 37 , and a second end of the fourth capacitor is grounded.

[0162] In at least one embodiment, since the first end 2101 of the first secondary coil 210 is located outside the surrounding area defined by the first primary coil and is arranged adjacent to the second chip, when the first end 2101 of the first secondary coil 210 is connected to the ground through a capacitor, the fourth capacitor 440 is arranged on the first chip, thereby improving the quality factor (Q value) of the transformer and saving layout space of the substrate, so that there are no SMD capacitors on the substrate, making the overall layout of the RF module more compact, with a smaller area, lower loss, and lower cost.

[0163] In a specific embodiment, refer to the following Fig.14 As shown, the first end of the first secondary coil 210 is connected to the signal output end and is located outside the surrounding area defined by the first primary coil 101, and the second end of the third secondary coil 230 is connected to the ground end and is located within the surrounding area defined by the second primary coil 102.

[0164] In at least one embodiment, when the first end of the first secondary coil 210 is connected to the signal output end, the first end of the first secondary coil 210 is connected to the signal output end outside the surrounding area defined by the first primary coil 101, so as to facilitate the connection of the first end of the first secondary coil 210 with external components or external circuits. Compared with the related art in which the port connected to the signal output end is set within the surrounding area, a jumper is required for a jumper connection when connecting to the external components or external circuits. In this embodiment, by locating the first end of the first secondary coil 210 connected to the signal output end outside the surrounding area defined by the first primary coil 101, no additional jumper is required, which not only reduces the loss caused by the jumper and improves the overall performance of the RF module, but also makes the overall area more compact and the cost lower.

[0165] In at least one embodiment, the second end of the third secondary coil 230 is connected to the ground terminal and is located within the surrounding area defined by the second primary coil 102. The second end of the third secondary coil 230 can be connected to the ground on the substrate through a metal through hole, and no additional jumper is required, thereby reducing the loss caused by the jumper and improving the overall performance of the RF module.

[0166] In a specific embodiment, the RF front-end module also includes a fourth capacitor arranged on the substrate, a first end of the fourth capacitor is connected to the first end of the first secondary coil, and a second end of the fourth capacitor is grounded, or a first end of the fourth capacitor is connected to the first end of the second secondary coil, and a second end of the fourth capacitor is connected to the signal output end.

[0167] In at least one embodiment, refer to Fig.14As shown, when the first end of the first secondary coil 210 is connected to the signal output end and is located outside the surrounding area defined by the first primary coil 101, and the second end of the third secondary coil 230 is connected to the ground end and is located within the surrounding area defined by the second primary coil 102, the fourth capacitor can be connected to the first end of the first secondary coil, and the fourth capacitor can be connected in series between the first end of the first secondary coil and the signal output end, or one end can be connected to the first end of the first secondary coil and the other end can be grounded. The fourth capacitor is configured to participate in the impedance matching of the output end of the transformer. The fourth capacitor can be an SMD chip capacitor.

[0168] The present embodiment also provides a radio frequency front-end module, including a substrate and a first chip and a transformer arranged on the substrate, the first chip including a first amplifying transistor, a first capacitor and a first pad; the first balun including a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to the second pad connected to the substrate through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, and the second end of the first capacitor is connected to the ground end, wherein the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2].

[0169] The first chip 200 may be a HBT (heterojunction bipolar transistor) chip, that is, the first chip 200 is implemented by HBT (heterojunction bipolar transistor) manufacturing process technology. The implementation method and function of the first amplifying transistor 10 and the transformer T1 in this embodiment are the same as those in the above embodiment, and will not be repeated here.

[0170] In this embodiment, the equivalent inductance of the first lead when the output end of the first amplifying transistor and the first end of the first winding are connected together with the first capacitor to participate in impedance conversion, thereby ensuring impedance matching while reducing circuit components to reduce circuit losses, thereby optimizing the overall performance of the power amplifier.

[0171] In at least one embodiment, the transformer T1 includes a first winding and a second winding coupled to each other, and the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2]; the impedance conversion ratio that can be achieved by the transformer is related to the inductance ratio of the first winding and the second winding. In this embodiment, in order to ensure the coupling coefficient between the first winding and the second winding and avoid the transformer occupying an excessive area, the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2], thereby ensuring the coupling coefficient between the first winding and the second winding of the transformer and other performance requirements.

[0172] In this embodiment, a substrate and a first chip and a transformer arranged on the substrate are included, the first chip includes a first amplifying transistor, a first capacitor and a first pad; the first balun includes a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to the second pad connected to the substrate through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, the first end of the first capacitor is connected to the first pad or the second pad, and the second end of the second winding is grounded. The second end of a capacitor is connected to the ground end, wherein the inductance ratio of the first winding and the second winding ranges from [1:1.5 to 1:2.2]. In this embodiment, the inductance equivalent to the first lead when the output end of the first amplifying transistor and the first end of the first winding are connected works together with the first capacitor to participate in impedance conversion, so that the impedance of the output end of the first amplifying transistor is less than the impedance of the input end of the transformer to meet the low impedance requirement of the output end of the first amplifying transistor, solves the problem that the power amplifier cannot take into account both the area and impedance matching requirements at the same time, thereby better realizing the impedance matching of the power amplifier while ensuring other performance and area.

[0173] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A power amplifier, characterized in that: It includes a first amplifying transistor, a first impedance conversion circuit and a transformer, the transformer includes a first winding and a second winding coupled to each other, the first impedance conversion circuit includes a first passive element and a second passive element, the first end of the first passive element is connected to the output end of the first amplifying transistor, the second end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded; the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded, wherein the first winding and the second winding are wound on the same metal layer.

2. The power amplifier according to claim 1, wherein: The inductance ratio of the first winding and the second winding ranges from [1:1 to 1:3].

3. The power amplifier according to claim 1, wherein: The inductance ratio of the first winding and the second winding ranges from [1:1.5 to 1:2.2].

4. The power amplifier according to claim 1, wherein: The turns ratio of the first winding to the second winding is in the range of [1:1 to 1:3].

5. The power amplifier according to claim 1, wherein: The difference between the impedance of the first end of the first winding and the impedance of the second end of the second winding is in the range of [25 ohms to 40 ohms].

6. The power amplifier according to claim 1, wherein: The first winding includes a first primary coil, and the second winding includes a first secondary coil and a second secondary coil, the first end of the first secondary coil is connected to the ground end, the second end of the first secondary coil is connected to the first end of the second secondary coil through a jumper, and the second end of the second secondary coil is connected to the signal output end, the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil.

7. The power amplifier according to claim 1, wherein: The first passive element is a first inductor, the second passive element is a first capacitor, the first end of the first inductor is connected to the output end of the first amplifying transistor, the second end of the first inductor is connected to the first end of the first winding, the first end of the first capacitor is connected to the first end or the second end of the first inductor, and the second end of the first capacitor is grounded.

8. The power amplifier according to claim 1, wherein: The first passive element is a first capacitor, the second passive element is a first inductor, the first end of the first capacitor is connected to the output end of the first amplifying transistor, the second end of the first capacitor is connected to the first end of the first winding, the first end of the first inductor is connected to the first end or the second end of the first capacitor, and the second end of the first inductor is grounded.

9. The power amplifier according to claim 7, characterized in that: The power amplifier also includes a second inductor, which is connected in series with the first capacitor and is configured to resonate at a first frequency, wherein a first ratio of the first frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

10. The power amplifier according to claim 9, characterized in that The first ratio is 3.

11. The power amplifier according to claim 1, wherein: The power amplifier also includes a first series resonant circuit, a first end of the first series resonant circuit is connected to the output end of the first amplifying transistor, a second end of the first series resonant circuit is grounded, and the first series resonant circuit is configured to resonate at a second frequency, wherein a second ratio of the second frequency to the frequency of the fundamental signal of the power amplifier is greater than or equal to 2.

12. The power amplifier according to claim 11, wherein: The second ratio is 2.

13. The power amplifier according to claim 11, characterized in that The first series resonant circuit includes a third inductor and a third capacitor connected in series.

14. The power amplifier according to claim 1, wherein: The power amplifier also includes a second capacitor, a first end of the second capacitor is connected to the second end of the first passive element, a second end of the second capacitor is connected to the first end of the first winding, and the first potential end is a ground end, or a first end of the second capacitor is connected to the second end of the first winding, a second end of the second capacitor is grounded, and the first potential end is a power supply end.

15. A power amplifier, characterized in that: It includes a first amplifying transistor, a first impedance conversion circuit and a transformer, wherein the transformer includes a first winding and a second winding coupled to each other, the first amplifying transistor is connected to the first end of the first winding through the first impedance conversion circuit, the second end of the first winding is connected to the first potential end, the first end of the second winding is configured to output a radio frequency signal, and the second end of the second winding is grounded, wherein the first impedance conversion circuit is configured to make the impedance of the output end of the first amplifying transistor smaller than the impedance of the first end of the first winding, and the inductance ratio of the first winding and the second winding is in the range of [1:1.5 to 1:2.2].

16. The power amplifier according to claim 15, characterized in that The first impedance conversion circuit includes a first passive element and a second passive element, wherein the first end of the first passive element is connected to the output end of the first amplifying transistor, the first end of the first passive element is connected to the first end of the first winding, the first end of the second passive element is connected to the first passive element, and the second end of the second passive element is grounded.

17. The power amplifier according to claim 15, characterized in that The first winding and the second winding are wound on the same metal layer.

18. The power amplifier according to claim 15, characterized in that The first winding includes a first primary coil, and the second winding includes a first secondary coil and a second secondary coil, the first end of the first secondary coil is connected to the ground end, the second end of the first secondary coil is connected to the first end of the second secondary coil through a jumper, and the second end of the second secondary coil is connected to the signal output end, the first secondary coil is wound on the inner side of the first primary coil, and the second secondary coil is wound on the outer side of the first primary coil.

19. The power amplifier according to claim 16, wherein: The first passive element is a first inductor, the second passive element is a first capacitor, the first end of the first inductor is connected to the output end of the first amplifying transistor, the second end of the first inductor is connected to the first end of the first winding, the first end of the first capacitor is connected to the first end or the second end of the first inductor, and the second end of the first capacitor is grounded.

20. A radio frequency front-end module, characterized in that: It includes a substrate and a first chip and a transformer arranged on the substrate, the first chip includes a first amplifying transistor, a first capacitor and a first pad; the first balun includes a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to the second pad connected to the substrate through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, the second end of the first capacitor is connected to the ground end, wherein the first winding and the second winding are wound on the same metal layer.

21. The radio frequency front-end module according to claim 20, characterized in that: The first lead and the first capacitor form an impedance conversion circuit configured to make the impedance of the output end of the first amplifying transistor smaller than the impedance of the first end of the first winding.

22. The radio frequency front-end module according to claim 20, characterized in that: The first chip further includes a third pad, the second end of the first capacitor is connected to the third pad, and the third pad is bonded to a ground terminal through a second wire.

23. The radio frequency front-end module according to claim 20, characterized in that: The first chip also includes a third capacitor and a fourth pad, the first end of the third capacitor is connected to the output end of the first amplifying transistor, the second end of the third capacitor is connected to the fourth pad, and the fourth pad is bonded to the ground end through a third wire.

24. The radio frequency front-end module according to claim 20, characterized in that: It also includes a second capacitor arranged on the substrate, the first end of the second capacitor is connected to the second solder pad, the second end of the second capacitor is connected to the first end of the first winding, and the first potential end is the ground end, or the first end of the second capacitor is connected to the second end of the second winding, the second end of the second capacitor is grounded, and the first potential end is the power supply end.

25. The radio frequency front-end module according to claim 20, characterized in that: The first winding includes a first primary coil and a second primary coil connected in parallel, the second winding includes a first secondary coil, a second secondary coil and a third secondary coil connected in series in sequence, and the first primary coil is arranged around the outer periphery of the second primary coil; The first secondary coil is wound around the outer circumference of the first primary coil, the second secondary coil is wound around the gap formed by the first primary coil and the second primary coil; and the third secondary coil is wound around the inner circumference of the second primary coil.

26. The radio frequency front-end module according to claim 20, characterized in that: The first chip also includes a second capacitor, a first end of the second capacitor is connected to the output end of the first amplifying crystal, a second end of the second capacitor is bonded to the first end of the first primary coil through a first wire, and is bonded to the first end of the second primary coil through a second wire.

27. The radio frequency front-end module according to claim 20, characterized in that: The first end of the first secondary coil is connected to the ground end and is located outside the surrounding area defined by the first primary coil. The second end of the third secondary coil is connected to the signal output end and is located within the surrounding area defined by the second primary coil.

28. The radio frequency front-end module according to claim 27, characterized in that: The first chip further includes a fourth capacitor, a first end of the first secondary coil is bonded to a first end of the fourth capacitor through a third wire, and a second end of the fourth capacitor is grounded.

29. The radio frequency front-end module according to claim 20, characterized in that: The first end of the first secondary coil is connected to the signal output end and is located outside the surrounding area defined by the first primary coil. The second end of the third secondary coil is connected to the ground end and is located within the surrounding area defined by the second primary coil.

30. The radio frequency front-end module according to claim 29, characterized in that: The RF front-end module also includes a fourth capacitor arranged on the substrate, a first end of the fourth capacitor is connected to the first end of the first secondary coil, and a second end of the fourth capacitor is grounded, or a first end of the fourth capacitor is connected to the first end of the first secondary coil, and a second end of the fourth capacitor is connected to the signal output end.

31. A radio frequency front-end module, characterized in that: It includes a substrate and a first chip and a transformer arranged on the substrate, the first chip includes a first amplifying transistor, a first capacitor and a first pad; the first balun includes a first winding and a second winding coupled to each other; the output end of the first amplifying crystal is connected to the first pad, the first pad is bonded to the second pad connected to the substrate through a first wire, the second pad is connected to the first end of the first winding, the second end of the first winding is connected to the first potential end, the first end of the second winding is connected to the signal output end, and the second end of the second winding is grounded; the first end of the first capacitor is connected to the first pad or the second pad, and the second end of the first capacitor is connected to the ground end, wherein the inductance ratio of the first winding and the second winding ranges from [1:1.5 to 1:2.2].

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