Array substrate and microfluidic device

Abstract

The embodiment of the invention provides an array substrate and a microfluidic device, the array substrate comprises a heating circuit and a heating electrode, and the heating circuit comprises a first transistor. The first transistor comprises a first electrode, a second electrode and a semiconductor part, the semiconductor part comprises a P-type semiconductor layer and an N-type semiconductor layer, the P-type semiconductor layer comprises a first part and a second part, the first part is in contact with the first electrode, the second part is not in contact with the first electrode, and the second electrode is in contact with the N-type semiconductor layer; the heating electrode is electrically connected with the first electrode or the second electrode. The first transistor further comprises a control electrode, the control electrode is overlapped with the second part, and an insulating layer is arranged between the control electrode and the second part. The first transistor provided by the invention can output an electric signal with low-voltage and high-current characteristics to the heating electrode, and the characteristics help to reduce the interference of the heating electrode on the process of controlling the movement of liquid drops on the array substrate on the premise that the heating electrode can generate relatively large heat.

Description

Technical Field

[0001] The present application relates to the field of microfluidics, and in particular to an array substrate and a microfluidic device. Background Art

[0002] Microfluidics is a technology that is mainly characterized by the manipulation of fluids in micrometer or smaller space. This technology has intersected with disciplines such as chemistry, biology, engineering and physics, showing a wide range of application prospects. Droplet microfluidics has been widely used in the fields of biomedical testing due to its advantages such as easy fluid manipulation, high monodispersity, miniaturization, low cost, high sensitivity and high throughput.

[0003] Generally speaking, in the process of biomedical testing, the use of microfluidic devices to manipulate droplets often requires high temperature conditions, so microfluidic devices often have a heating function. However, the implementation of the heating function usually has an adverse effect on the process of controlling the movement of droplets by the microfluidic device. Summary of the invention

[0004] In view of this, the present application provides an array substrate and a microfluidic device to help solve the problem that the heating process affects the process of controlling the movement of droplets in the microfluidic device.

[0005] In a first aspect, an embodiment of the present application provides an array substrate, including a heating circuit and a heating electrode, wherein the heating circuit includes a first transistor, the first transistor includes a first electrode, a second electrode and a semiconductor portion, the semiconductor portion includes a P-type semiconductor layer and an N-type semiconductor layer, the P-type semiconductor layer includes a first portion and a second portion, the first portion contacts the first electrode and the second portion does not contact the first electrode, the second electrode contacts the N-type semiconductor layer, and the heating electrode is electrically connected to the first electrode or the second electrode.

[0006] The first transistor further includes a control electrode, the control electrode overlaps with the second portion, and an insulating layer is included between the control electrode and the second portion.

[0007] By setting the control electrode, the concentration of the second carrier in the first part can be increased, and the number of the first carriers transferred to the first part per unit time can be increased, which helps to increase the number of the first carriers leaving the first transistor through the first electrode, thereby increasing the current intensity passing through the first transistor. This characteristic of the first transistor helps to reduce the interference of the heating electrode on the process of controlling the movement of the droplets on the array substrate under the premise that the heating electrode can generate a large amount of heat.

[0008] In a second aspect, an embodiment of the present application provides a microfluidic device, comprising an array substrate as provided in the first aspect.

[0009] In the present application, the second carrier concentration in the first part can be increased by setting the control electrode, which helps to increase the number of first carriers leaving the first transistor through the first electrode, thereby increasing the current intensity passing through the first transistor. At this time, the first transistor can output an electrical signal with low voltage and high current characteristics to the heating electrode. This characteristic helps to reduce the interference of the heating electrode on the array substrate in controlling the movement of droplets under the premise that the heating electrode can generate a large amount of heat. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0011] Figure 1 is a cross-sectional schematic diagram of a partial structure of a microfluidic device related to the present application;

[0012] Figure 2 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0013] Figure 3 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0014] Figure 4 A schematic diagram of the working principle of a partial structure of the first transistor provided in the present application;

[0015] Figure 5 A schematic diagram of the relationship between the current and voltage output by the first transistor provided in the present application;

[0016] Figure 6 for Figure 2 A schematic projection diagram of a portion of the structure shown;

[0017] Figure 7 An equivalent circuit diagram of a part of the structure of the array substrate provided in this application;

[0018] Figure 8 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0019] Fig. 9 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0020] Fig.10 for Fig. 9 A flow chart showing the preparation of a partial structure of an array substrate;

[0021] Fig.11 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0022] Fig.12 for Fig.11 A flow chart showing the preparation of a partial structure of an array substrate;

[0023] Fig.13 for Fig.11 Equivalent circuit diagram of the partial structure shown;

[0024] Fig.14 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application;

[0025] Fig.15 A schematic top view of a partial structure of an array substrate provided in the present application. DETAILED DESCRIPTION

[0026] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0027] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0028] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0029] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0030] Figure 1 It is a cross-sectional schematic diagram of a partial structure of a microfluidic device related to the present application.

[0031] like Figure 1As shown, the existing microfluidic device 10' may include a driving electrode 01, a common electrode 02, a first hydrophobic layer 03 and a second hydrophobic layer 04 arranged opposite to each other. A control electric field for driving the movement of a droplet 05 may be generated between the driving electrode 01 and the common electrode 02. The relative area between the first hydrophobic layer 03 and the second hydrophobic layer 04 may be provided for the droplet 05 to move therein, and the droplet 05 may be in contact with both the first hydrophobic layer 03 and the second hydrophobic layer 04.

[0032] Controlling the electric field can change the surface tension between the droplet 05 and the first hydrophobic layer 03, the surface tension between the droplet 05 and the second hydrophobic layer 04, and then change the contact angles between the droplet 05 and the first hydrophobic layer 03 and the second hydrophobic layer 04, thereby achieving the effect of controlling the movement of the droplet 05.

[0033] The function of controlling the movement of droplets through electric fields has made the microfluidic device 10' attract much attention in the fields of biomedical testing, drug synthesis screening, etc. In particular, when the microfluidic device 10' is applied to application scenarios such as medical testing and chemical experiments (such as drug synthesis experiments), the microfluidic device 10' itself is usually required to have a heating function to meet the required conditions of higher temperatures.

[0034] The existing microfluidic device 10' may include a resistance wire structure 06, which can generate heat after receiving current, and this characteristic is used to realize the heating function. However, during the heating process, the resistance wire structure 06 itself generates an electric field. In order to prevent the electric field generated by the resistance wire structure 06 from interfering with the working state of the driving electrode 01, it is usually necessary to reduce the voltage transmitted to the resistance wire structure 06, which results in a smaller current received by the resistance wire structure 06. The heat generated by the resistance wire structure 06 makes it difficult for the microfluidic device 10' to reach a higher temperature condition, which affects the use effect of the microfluidic device 10'.

[0035] Figure 2 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0036] In order to solve the above problems, the present application provides an array substrate 10, such as Figure 2 As shown, the array substrate 10 includes a heating circuit 11 and a heating electrode 12 . The heating circuit 11 can be used to transmit an electrical signal required for heating to the heating electrode 12 . The heating circuit 11 includes a first transistor 111 .

[0037] The first transistor 111 includes a first electrode 111a, a second electrode 111b and a semiconductor portion 111c, wherein the semiconductor portion 111c includes a P-type semiconductor layer C1 and an N-type semiconductor layer C2. The first transistor 111 may be a diode.

[0038] The P-type semiconductor layer C1 includes a first portion C11 and a second portion C12 . The first portion C11 contacts the first electrode 111 a and the second portion C12 does not contact the first electrode 111 a . The second electrode 111 b contacts the N-type semiconductor layer C2 .

[0039] When the first transistor 111 is working, the second electrode 111b can transfer the first carrier (e.g., electron) to the N-type semiconductor layer C2, and at least part of the first carrier transferred from the second electrode 111b to the N-type semiconductor layer C2 can move to the P-type semiconductor layer C1, and can leave the first transistor 111 through the first electrode 111a. Among them, in the same time, the greater the number of first carriers transferred from the N-type semiconductor layer C2 to the P-type semiconductor layer C1, the greater the current passing through the first transistor 111. In addition to the difference between the voltages applied to the first electrode 111a and the second electrode 111b, the concentration of the second carrier (e.g., hole) in the P-type semiconductor layer C1 will also affect the number of first carriers transferred from the N-type semiconductor layer C2 to the P-type semiconductor layer C1. The reason is that the first carriers in the semiconductor portion 111c tend to move to a region with a larger second carrier concentration, for example, electrons tend to move to a region with a larger hole concentration.

[0040] Figure 3 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0041] Combination Figure 2 and Figure 3 , the heating electrode 12 is electrically connected to the first electrode 111 a or the second electrode 111 b , and at this time, the first transistor 111 can be used to transmit the electrical signal required for heating to the heating electrode 12 .

[0042] Among them, combined Figure 2 and Figure 3 The first transistor 111 further includes a control electrode 111d, the control electrode 111d overlaps with the second portion C12, and an insulating layer 07 is included between the control electrode 111d and the second portion C12.

[0043] Figure 4 A schematic diagram of the working principle of a partial structure of the first transistor provided in the present application.

[0044] The control electrode 111d can generate a control electric field, and the control electric field can act on the second portion C12. Figure 4As shown, when the control electrode 111d is working, under the action of the control electric field generated by it, new first carriers a and second carriers b (generated by the separation of originally combined electrons and holes) can be generated in the P-type semiconductor layer C1, and the first carrier a can move to the second part C12 under the action of the electric field force generated by the control electric field. At this time, the concentration of the second carrier b in the first part C11 increases.

[0045] In the embodiment of the present application, by setting the control electrode 111d, the concentration of the second carrier b in the first part C11 can be increased, and the number of the first carrier a transferred to the first part C11 per unit time can be increased, which helps to increase the number of the first carrier a leaving the first transistor 111 through the first electrode 111a, and then increase the current intensity passing through the first transistor 111. At this time, under the action of the control electrode 111d, without increasing the voltage difference between the two ends of the first transistor 111, the current intensity output by the first transistor 111 to the heating electrode 12 can be increased, that is, the first transistor 111 can output an electrical signal with low voltage and high current characteristics to the heating electrode 12. This characteristic of the first transistor 111 helps to reduce the interference of the heating electrode 12 on the control of the droplet movement process of the array substrate 10 under the premise that the heating electrode 12 can generate a large amount of heat. In addition, since there is an insulating layer 07 between the control electrode 111d and the second part C12, it is difficult for carriers to leave the P-type semiconductor layer C1 through the control electrode 111d. Therefore, when the first transistor 111 is turned on, the current output by the first transistor 111 will not decrease due to the control electrode 111d extracting carriers in the semiconductor part 111c.

[0046] Figure 5 This is a schematic diagram of the relationship between the current and voltage output by the first transistor provided in the present application. For ease of understanding, Figure 5 FIG. 4 shows a schematic diagram of the statistical data changes of the voltage and current of the electrical signal output by the first transistor in multiple experiments.

[0047] like Figure 5 As shown, when the source voltage SV of the first transistor 111 satisfies 0V<SV<5V, under the same source voltage SV, the current CR output by the first transistor 111 can be greater than 10 -6 A, that is, the first transistor 111 can output an electrical signal with low voltage and high current characteristics.

[0048] The first transistor 111 provided in the present application can also be used to drive a light-emitting device. Since the first transistor 111 can output an electrical signal with low voltage and high current characteristics, the light-emitting device can emit light with higher brightness when the first transistor 111 is used to drive the light-emitting device, which is helpful to improve the problem of low luminous intensity caused by insufficient voltage supply. The light-emitting device can be one of an organic light-emitting diode (OLED), a micro light-emitting diode (Micro-LED), and a sub-millimeter light-emitting diode (mini-LED).

[0049] In one embodiment of the present application, Figure 2 and Figure 3 The semiconductor portion 111c further includes an intrinsic semiconductor layer C3, and the intrinsic semiconductor layer C3 is located between the P-type semiconductor layer and the N-type semiconductor layer. In this case, the first transistor 111 may be a PIN junction diode.

[0050] Figure 6 for Figure 2 The projection diagram of the partial structure shown is for easy understanding. Figure 7 Only the projections of the first part and the second part in the first plane are shown.

[0051] In one embodiment of the present application, Figure 6 As shown, the projection s1 of the first portion C11 in the first plane is larger than the projection s2 of the second portion C12 in the first plane. The first plane is perpendicular to the arrangement direction of the first electrode 111a and the first portion C11, and the first plane may be perpendicular to the plane where the array substrate is located.

[0052] When the length of the P-type semiconductor layer C1 in the direction perpendicular to the first plane remains unchanged, the larger the projection area of ​​the P-type semiconductor layer C1 in the first plane, the larger the volume of the P-type semiconductor layer C1 can be, and the larger the number of carriers that the P-type semiconductor layer C1 can accommodate. Therefore, the projection area of ​​the first portion C11 in the first plane is larger than the projection area of ​​the second portion C12 in the first plane, which means that the number of carriers that the second portion C12 can accommodate can be smaller than the number of carriers that the first portion C11 can accommodate.

[0053] When the first transistor 111 is working, some of the first carriers in the first part C11 can leave the P-type semiconductor layer C1 through the first electrode 111a, and the number of the first carriers that leave can be proportional to the current output by the first transistor 111. The control electric field generated by the control electrode 111d can move some of the carriers in the P-type semiconductor layer C1 to the second part C12, and under the action of the control electric field, some of the first carriers in the first part C11 can also be attracted to the second part C12. In order to avoid the control electric field excessively attracting the first carriers in the first part C11 and causing the current to decrease, the projected area of ​​the first part C11 can be set to be larger than the projected area of ​​the second part C12, so as to limit the number of first carriers that can be accommodated in the second part C12 and reduce the influence of the control electric field on the current output by the first transistor 111.

[0054] Figure 7 This is an equivalent circuit diagram of a partial structure of the array substrate provided in this application.

[0055] In one embodiment of the present application, Figure 7 As shown, the control electrode 111d is electrically connected to the first signal line L1, and the first signal line L1 is used to transmit a constant voltage signal.

[0056] In the embodiment of the present application, the first signal line L1 can transmit a constant voltage signal to the control electrode 111d, and the control electrode 111d can generate a control electric field with a constant field strength, which helps to adjust the distribution of some carriers in the P-type semiconductor layer C1.

[0057] Figure 8 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0058] In one embodiment of the present application, Figure 8 As shown, the control electrode 111d is electrically insulated from the first electrode 111a and the signal lines to which they are electrically connected are different, so the control electrode 111d and the first electrode 111a can receive different electrical signals respectively.

[0059] In the embodiment of the present application, the control electrode 111d and the first electrode 111a are electrically connected to different signal lines, which helps to achieve a suitable voltage difference between the voltage received by the control electrode 111d and the voltage received by the first electrode 111a, and enhances the effect of the control electrode 111d in increasing the current output by the first transistor 111. For example, the control electrode 111d can be electrically connected to the first signal line L1, and the first electrode 111a can be electrically connected to the second signal line L2, and the electrical signals transmitted by the first signal line L1 and the second signal line L2 can be different.

[0060] In one embodiment of the present application, the first electrode 111 a , the second electrode 111 b , and the control electrode 111 d all include light shielding materials.

[0061] In the embodiments of the present application, Figure 3 As shown, along a direction perpendicular to the plane where the array substrate 10 is located, the first electrode 111a, the second electrode 111b, and the control electrode 111d can overlap with the semiconductor portion 111c respectively. Then, when there is external light irradiating toward the semiconductor portion 111c along a direction perpendicular to the plane where the array substrate 10 is located, the first electrode 111a, the second electrode 111b, and the control electrode 111d can all play a shading role, thereby reducing the influence of external light on the working state of the first transistor 111.

[0062] In one embodiment of the present application, Figure 2 and Figure 7 The heating circuit 11 also includes a second transistor 112, a first electrode 112a of the second transistor 112 is electrically connected to the first signal line L1, a second electrode 112b of the second transistor 112 is electrically connected to the control electrode 111d, a gate 112c of the second transistor 112 is electrically connected to the second signal line L2, and the first signal line L1 is used to transmit a constant voltage signal.

[0063] The second transistor 112 may be a triode, a field effect transistor, etc. The second transistor 112 may be used to control the working state of the control electrode 111d. When the second transistor 112 is turned on, the control electrode 111d may receive the electrical signal transmitted by the first signal line L1, and the control electrode 111d works.

[0064] The second signal line L2 may transmit a control signal to the gate 112c of the second transistor 112 to control the on or off of the second transistor 112. For example, the second transistor 112 may be a P-channel transistor, and the control signal may be a low-level signal, and the gate 112c of the second transistor 112 is turned on when receiving the control signal.

[0065] In one embodiment of the present application, Figure 2 As shown, the heating electrode 12 is disposed in the same layer as the second electrode 112b of the second transistor 112. In a direction perpendicular to the plane of the array substrate 10, the channel 112d of the second transistor 112 overlaps the control electrode 111d, wherein the control electrode 111d comprises a light shielding material.

[0066] In the embodiment of the present application, the heating electrode 12 is arranged in the same layer as the second electrode 112b of the second transistor 112. Since the heating electrode 12 and the second electrode 112b of the second transistor 112 can be electrically connected, the heating electrode 12 and the second electrode 112b of the second transistor 112 can be arranged in an integrated manner. This arrangement can avoid the need to additionally arrange a film layer structure as the heating electrode 12, thereby reducing the manufacturing cost. In addition, since the control electrode 111d and the channel 112d of the second transistor 112 can overlap, and the control electrode 111d can include a light shielding material, the control electrode 111d can be used to shield the channel 112d of the second transistor 112, thereby maintaining the working stability of the second transistor 112.

[0067] Fig. 9 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0068] In one embodiment of the present application, Fig. 9 As shown, the control electrode 111d is disposed in the same layer as the second electrode 112b of the second transistor 112. Along a direction perpendicular to the plane where the array substrate 10 is located, the channel 112d of the second transistor 112 overlaps with the heating electrode 12.

[0069] In the embodiment of the present application, the control electrode 111d is arranged in the same layer as the second electrode 112b of the second transistor 112. Since the control electrode 111d and the second electrode 112b of the second transistor 112 can be electrically connected, the control electrode 111d and the second electrode 112b of the second transistor 112 can be arranged in an integrated manner. This arrangement can avoid the need to additionally arrange a film layer structure as the control electrode 111d, thereby reducing the manufacturing cost. In addition, since the heating electrode 12 and the channel 112d of the second transistor 112 can overlap, and the heating electrode 12 can include a light-shielding material, the heating electrode 12 can be used to shield the channel 112d of the second transistor 112, thereby maintaining the working stability of the second transistor 112.

[0070] Fig.10 for Fig. 9 The preparation flow chart of the partial structure of the array substrate is shown.

[0071] Combination Fig. 9 and Fig.10 When preparing the array substrate 10, the gate 112c of the second transistor 112, the first film layer 001, the channel 112d of the second transistor 112, the control electrode 111d, the second film layer 002, the P-type semiconductor layer C1, the intrinsic semiconductor layer C3, the N-type semiconductor layer C2, the third film layer 003, the heating electrode 12, the fourth film layer 004, the driving electrode 212 and the fifth film layer 005 can be prepared in sequence.

[0072] Fig.11A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0073] In one embodiment of the present application, Fig.11 As shown, the array substrate 10 further includes a fluid layer 31 and a driving circuit 21, the driving circuit 21 is used to drive the fluid in the fluid layer 31 to move, the driving circuit 21 includes a third transistor 211 and a driving device 212, and the third transistor 211 is used to transmit an electrical signal required to drive the fluid to move to the driving device 212. The third transistor 211 can control the working state of the driving device 212, and the third transistor 211 can be one of a triode, a field effect transistor, etc.

[0074] The second transistor 112 and the third transistor 211 are transistors of the same type, and this configuration helps to reduce the difficulty of manufacturing.

[0075] Fig.12 for Fig.11 The preparation flow chart of the partial structure of the array substrate is shown.

[0076] Combination Fig.11 and Fig.12 When the array substrate 10 is prepared, the gate 112c of the second transistor 112, the first film layer 001, the channel 112d of the second transistor 112, the second electrode 112b of the second transistor 112, the second film layer 002, the third film layer 003, the N-type semiconductor layer C2, the intrinsic semiconductor layer C3, the P-type semiconductor layer C1, the fourth film layer 004, the control electrode 111d, the fifth film layer 005, the driving electrode 212 and the sixth film layer 006 can be prepared in sequence. The second film layer 002 and the third film layer 003 can be prepared using the same mask.

[0077] Fig.13 for Fig.11 The equivalent circuit diagram of the partial structure shown.

[0078] In one embodiment of the present application, Fig.11 and Fig.13 , the gate 211c of the third transistor 211 is electrically connected to the second signal line L2.

[0079] In the embodiment of the present application, the gate 112c of the second transistor 112 and the gate 211c of the third transistor 211 can be electrically connected to the second signal line L2, so the gate 112c of the second transistor 112 and the gate 211c of the third transistor 211 can receive the same control signal. Since the second transistor 112 and the third transistor 211 can be transistors of the same type, the second transistor 112 and the third transistor 211 can be turned on at the same time, and the driving device 212 and the heating electrode 12 can work at the same time, which helps to realize that the array substrate 10 turns on the heating function while controlling the movement of the droplets.

[0080] In one embodiment of the present application, Fig.11 and Fig.13 The first electrode 211a of the third transistor 211 and the control electrode 111d are electrically connected to the same signal line.

[0081] In the embodiment of the present application, the same signal line can be used to transmit electrical signals to the driving device 212 and the control electrode 111d respectively. This setting method helps to simplify the wiring arrangement; for example, the first electrode 211a and the control electrode 111d of the third transistor 211 can be set to be electrically connected to the first signal line L1.

[0082] In one embodiment of the present application, Figure 2 and Figure 7 The heating circuit 11 further includes a first capacitor 113, and the first capacitor 113 includes a first plate 113a and a second plate 113b. The first plate 113a can be electrically connected to the control electrode 111d, and the second plate 113b can be located on a side of the film layer where the second electrode 112b of the second transistor 112 is located away from the semiconductor portion 111c. At this time, the first capacitor 113 can be used to maintain the potential of the control electrode 111d.

[0083] The second electrode 112 b of the second transistor 112 is disposed in the same layer as the first electrode plate 113 a , that is, the second electrode 112 b of the second transistor 112 can be integrally disposed with the first electrode plate 113 a .

[0084] In the embodiment of the present application, the first capacitor 113 can maintain the potential of the control electrode 111d for a certain period of time, which helps to improve the working stability of the control electrode 111d. At the same time, the second electrode 112b of the second transistor 112 and the first electrode plate 113a are arranged in the same layer, which can avoid the need to set up an additional film layer for setting up the capacitor electrode plate, which helps to reduce the manufacturing cost.

[0085] Fig.14 A schematic cross-sectional view of a partial structure of an array substrate provided in the present application.

[0086] In one embodiment of the present application, Fig.14 As shown, the array substrate 10 further includes a light shielding structure 41, and the light shielding structure 41 may include a light absorbing material. In a direction perpendicular to the plane where the array substrate 10 is located, the channel 112d of the second transistor 112 overlaps with the light shielding structure 41, and the light shielding structure 41 can be used to shield the channel 112d of the second transistor 112, thereby enhancing the working stability of the second transistor 112.

[0087] The second electrode plate 113b is disposed in the same layer as the light shielding structure 41. This arrangement eliminates the need to separately provide a film layer for the light shielding structure 41, which helps to reduce the manufacturing cost. The light shielding structure 41 may be the gate 112c of the second transistor 112.

[0088] Fig.15 A schematic top view of a partial structure of an array substrate provided in the present application.

[0089] In one embodiment of the present application, Fig.13 and Fig.15 The array substrate 10 may further include a plurality of functional units 51 arranged in an array, and the functional unit 51 includes a heating circuit 11 and a driving circuit 21 .

[0090] In the embodiment of the present application, the heating circuit 11 and the driving circuit 21 in the array substrate 10 are integrated into an array-arranged functional unit 51, so that the array arrangement of the heating circuit 11 can be realized. When the heating function of the array substrate 10 is turned on, the heating electrode 12 can achieve the effect of uniformly heating the array substrate 10.

[0091] The present application provides a microfluidic device, including the array substrate as described in the above embodiment. The microfluidic device can be applied to biomedical research, drug synthesis screening, environmental monitoring and protection, health quarantine, forensic identification, biological reagent detection and other fields.

[0092] The microfluidic device provided in the present application can have a good heating function, and can reduce the interference with the process of controlling the movement of droplets while meeting the higher temperature required for controlling the movement of droplets.

[0093] In this specification, the same or similar parts between the various embodiments can be referred to each other. In particular, for the device embodiment and the terminal embodiment, since they are basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the description in the method embodiment.

Claims

1. An array substrate, It is characterized in that It comprises a heating circuit and a heating electrode, wherein the heating circuit comprises a first transistor; The first transistor includes a first electrode, a second electrode and a semiconductor portion, the semiconductor portion includes a P-type semiconductor layer and an N-type semiconductor layer; the P-type semiconductor layer includes a first portion and a second portion, the first portion is in contact with the first electrode and the second portion is not in contact with the first electrode, and the second electrode is in contact with the N-type semiconductor layer; the heating electrode is electrically connected to the first electrode or the second electrode; The first transistor further includes a control electrode, the control electrode overlaps with the second portion, and an insulating layer is included between the control electrode and the second portion.

2. The array substrate according to claim 1, It is characterized in that The semiconductor portion further includes an intrinsic semiconductor layer located between the P-type semiconductor layer and the N-type semiconductor layer.

3. The array substrate according to claim 1, It is characterized in that The projected area of ​​the first part in the first plane is larger than the projected area of ​​the second part in the first plane; The first plane is perpendicular to an arrangement direction of the first electrodes and the first portion.

4. The array substrate according to claim 1, It is characterized in that The control electrode is electrically connected to a first signal line, and the first signal line is used to transmit a constant voltage signal.

5. The array substrate according to claim 1 or 4, It is characterized in that The control electrode is electrically insulated from the first electrode and is electrically connected to different signal lines.

6. The array substrate according to claim 1, It is characterized in that The first electrode, the second electrode and the control electrode all include light shielding materials.

7. The array substrate according to claim 1, It is characterized in that The heating circuit also includes a second transistor, a first electrode of the second transistor is electrically connected to the first signal line, a second electrode of the second transistor is electrically connected to the control electrode, a gate of the second transistor is electrically connected to the second signal line, and the first signal line is used to transmit a constant voltage signal.

8. The array substrate according to claim 7, It is characterized in that The control electrode is arranged in the same layer as the second electrode of the second transistor; Along a direction perpendicular to the plane where the array substrate is located, a channel of the second transistor overlaps with the heating electrode.

9. The array substrate according to claim 7, It is characterized in that The heating electrode is arranged in the same layer as the second electrode of the second transistor; Along a direction perpendicular to the plane where the array substrate is located, a channel of the second transistor overlaps with the control electrode; Wherein, the control electrode comprises a light-shielding material.

10. The array substrate according to claim 7, It is characterized in that The array substrate further comprises a fluid layer and a driving circuit, wherein the driving circuit is used to drive the fluid in the fluid layer to move, and the driving circuit comprises a third transistor and a driving device, wherein the third transistor is used to transmit an electrical signal required to drive the fluid to move to the driving device; The second transistor and the third transistor are transistors of the same type.

11. The array substrate according to claim 10, It is characterized in that A gate of the third transistor is electrically connected to the second signal line.

12. The array substrate according to claim 10, It is characterized in that The first electrode of the third transistor and the control electrode are electrically connected to the same signal line.

13. The array substrate according to claim 7, It is characterized in that The heating circuit further includes a first capacitor, the first capacitor includes a first electrode plate and a second electrode plate, and the second electrode of the second transistor is arranged in the same layer as the first electrode plate.

14. The array substrate according to claim 13, It is characterized in that The array substrate further comprises a light shielding structure; along a direction perpendicular to the plane where the array substrate is located, the channel of the second transistor overlaps with the light shielding structure; The second electrode plate is arranged on the same layer as the light shielding structure.

15. A microfluidic device, It is characterized in that Comprising the array substrate as described in any one of claims 1-14.

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