Preparation method of terahertz traveling wave tube based on electron beam gasification chambering technology and terahertz traveling wave tube

Abstract

The invention provides a preparation method of a terahertz traveling wave tube based on an electron beam gasification chambering technology and the terahertz traveling wave tube, and the preparation method comprises the steps: machining an initial electron channel in a high-frequency interaction assembly, and enabling the diameter of the initial electron channel to be smaller than the design diameter of an electron beam; centering and welding the high-frequency interaction assembly and the electronic gun; carrying out vacuumizing operation on the terahertz traveling wave tube through a vacuum exhaust furnace; the electron gun is started, the anode is used for accelerating the electrons for the first time, high voltage is applied to the tube body of the high-frequency interaction assembly for accelerating the electrons for the second time, and the high voltage is larger than the voltage of the anode; wherein the material on the peripheral side of the initial electron channel is gasified and extracted by using the electrons subjected to secondary acceleration.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave and millimeter wave electric vacuum devices, and in particular to a preparation method of a terahertz traveling wave tube based on electron injection gasification hole expansion technology and a terahertz traveling wave tube. Background Art

[0002] As a high-power terahertz source, terahertz traveling wave tubes have become a research hotspot at home and abroad due to their high power, high efficiency, and wide bandwidth. With the continuous improvement of the high-power, high-efficiency, and wide-bandwidth electromagnetic wave amplification capabilities of traveling wave tube products in the main atmospheric windows, various advanced short millimeter waves and terahertz weapons and equipment will be promoted to practical applications. The working principle of terahertz traveling wave tubes is consistent with that of traditional traveling wave tubes. Both rely on electrons synchronized with electromagnetic waves to transfer energy to electromagnetic waves to achieve amplification. They mainly include electron guns, high-frequency interaction systems, collectors, input and output devices, and magnetic focusing systems.

[0003] Due to the existence of the size co-occurrence effect, the higher the frequency of microwave power devices, the smaller their structural dimensions. For example, the slow wave channel diameter of a 220GHz traveling wave tube is only about 0.25 mm. The corresponding diameter for 1.03 terahertz is about 0.1 mm. Through a series of special precision adjustment and welding devices, the manufacturing accuracy of terahertz traveling wave tubes can reach between 20 and 30 microns, but these assembly errors already account for more than 20% of the electron channel. The centering problem is the core process problem faced by the development of high-frequency devices. In the early years, when designing L-band traveling wave tubes, because the diameter of the electron injection channel was relatively large, up to 5 to 6 mm, the filling ratio could be achieved above 80%, and the electronic efficiency and coupling impedance could both reach very ideal indicators.

[0004] The electron flow problem of terahertz traveling wave tubes is actually the interception problem of irregular electrons. When the interception ratio exceeds a certain value, such as 50%, it will significantly reduce the DC power, increase heat consumption, and even cause failure accidents in which the extremely fine channel is closed after being bombarded by electrons. The present invention intends to utilize the energy of electron bombardment, optimize the electron beam parameters, reconstruct the electron channel, and obtain a high-flow, high-filling ratio electron optical system so that more electron energy can be delivered to the microwave signal. This will provide strong support for improving the performance stability, reliability and microwave signal amplification capability of terahertz traveling wave tubes, and promote the widespread application of terahertz technology in communications, radar and other fields.

[0005] Due to the requirements of volume and weight, space traveling wave tubes generally use periodic permanent magnet focusing (PPM). The transmission of electron beams inevitably has pulsation, that is, the envelope trajectory of the electron beam periodically increases and decreases. In terms of the inner diameter design of the electron channel, sufficient space has to be left to prevent electrons from hitting the inner wall of the electron channel. Even in a uniform magnetic field with a large volume and weight, electron pulsation is inevitable due to slight manufacturing errors.

[0006] In terms of assembly, the precision requirements of terahertz traveling wave tubes are extremely high. Slight assembly errors and welding deformations of the cathode, focusing pole, anode, and magnetic field associated with the electron beam may lead to instability or performance degradation of the electron beam transmission. Traditional assembly methods generally design relatively strict tolerances and use manual adjustment to ensure the relative position of parts. This method of assembly has low efficiency and is difficult to fully guarantee accuracy. Summary of the invention

[0007] In view of this, the present disclosure provides a preparation method of a terahertz traveling wave tube based on electron injection vaporization hole expansion technology and a terahertz traveling wave tube, which can achieve an extremely high electron injection filling ratio without significantly increasing the centering and assembly requirements, and is suitable for terahertz traveling wave tubes with various forms of electron injection.

[0008] According to an inventive concept of one aspect of the present disclosure, a method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology is provided, comprising:

[0009] Processing an initial electron channel in the high-frequency interaction component, wherein the diameter of the initial electron channel is smaller than the designed diameter of the electron beam;

[0010] Aligning and assembling the high frequency interaction component and the electron gun;

[0011] The terahertz traveling wave tube is evacuated by a vacuum exhaust furnace;

[0012] Turning on the electron gun, accelerating the electrons once using the anode, applying a high voltage to the tube body of the high-frequency interaction component to accelerate the electrons twice, wherein the high voltage is greater than the voltage of the anode;

[0013] The second accelerated electrons are used to vaporize and extract the material around the initial electron channel.

[0014] According to some embodiments of the present disclosure, after turning on the electron gun, the method further includes:

[0015] The collector current is monitored and the ratio to the total current is calculated to obtain the electron flow rate. When the electron flow rate is greater than a preset threshold, it indicates that the gasification and pore expansion is completed.

[0016] According to some embodiments of the present disclosure, the voltage applied to the electron gun and the tube body of the high-frequency interaction component is a pulse voltage, and the duration of a single pulse voltage ranges from 10ns to 200ns.

[0017] According to some embodiments of the present disclosure, after the electronic circulation rate is greater than a preset threshold, the method further includes:

[0018] The voltage applied to the tube of the high-frequency interaction component is reduced to the same level as or slightly higher than the anode potential, and the duration of a single pulse is extended to the millisecond level to the second level, wherein the slightly higher range includes 0~1kV.

[0019] According to some embodiments of the present disclosure, the voltage applied to the anode ranges from 15 to 30 kV, and the voltage difference between the tube voltage of the high-frequency interaction component and the anode ranges from 50 to 100 kV.

[0020] According to some embodiments of the present disclosure, the process of punching holes using secondary accelerated electrons further includes:

[0021] Monitor the vacuum degree in the electron gun and the collector. When the vacuum degree in the electron gun or the collector is lower than a first preset threshold, temporarily stop the punching operation, and restart the punching operation after the vacuum degree recovers to a second preset threshold, wherein the second preset threshold is greater than the first preset threshold.

[0022] According to some embodiments of the present disclosure, the preparation method according to the above embodiment is characterized in that, in the process of punching with secondary accelerated electrons, it also includes the following operations:

[0023] The temperature of the tube body of the high-frequency interaction component is monitored and cooled by air cooling or water cooling. If the temperature of the tube body is higher than a first preset temperature, the punching operation is temporarily stopped, and the punching operation is restarted after the temperature of the tube body is lowered to a second preset temperature, wherein the second preset temperature is lower than the first preset temperature.

[0024] According to another aspect of the invention disclosed herein, a terahertz traveling wave tube based on electron injection gasification hole expansion technology is also provided, comprising:

[0025] An electron gun assembly, including a cathode, a focusing electrode and an anode, for generating an electron beam;

[0026] A high frequency interaction component, comprising an electron channel, one end of which is centrally connected to the output end of the electron gun component, and the electron channel is suitable for exchanging the energy of the electron beam to electromagnetic waves, wherein the electron channel is punched out by the preparation method described in the above embodiment; and

[0027] The collector is connected to the other end of the electron channel.

[0028] According to some embodiments of the present disclosure, the terahertz traveling wave tube has three exhaust pipes for vacuuming, and the three exhaust pipes are respectively opened in the area near the anode near the front end of the electron gun, the tail end of the electron gun away from the anode, and the end of the collector away from the high-frequency interaction component.

[0029] According to some embodiments of the present disclosure, the collector is a multi-stage step-down collector structure for recovering the energy of electrons.

[0030] The method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology and the terahertz traveling wave tube provided by the embodiments of the present disclosure have the following beneficial effects compared with the prior art:

[0031] (1) Improving the electron filling ratio limit: The electron injection gasification hole expansion technology can effectively increase the electron injection filling ratio through a specific process, making it close to or even reaching the theoretical electron filling ratio limit. It can enable more electrons to participate in the energy exchange process with electromagnetic waves, thereby improving the amplification efficiency and output power of the traveling wave tube.

[0032] (2) It can reduce the alignment requirements. In traditional traveling wave tubes, the alignment accuracy between the electron beam and the slow-wave structure has a significant impact on the performance of the device. However, the terahertz traveling wave tube based on electron injection vaporization expansion technology reduces the alignment accuracy requirements by optimizing the shape and distribution of the electron beam. This makes the manufacturing and debugging process simpler and improves the reliability and stability of the device.

[0033] (3) Improve power output. Due to the increase in electron injection filling ratio, the terahertz traveling wave tube based on electron injection gasification expansion technology can provide higher output power. This is of great significance for application scenarios that require high power output. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0035] Figure 1 A flow chart schematically shows a method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology according to an embodiment of the present disclosure;

[0036] Figure 2 A three-dimensional diagram of a terahertz traveling wave tube according to an embodiment of the present disclosure is schematically shown;

[0037] Figure 3 yes Figure 2A cross-sectional view of a terahertz traveling wave tube is shown;

[0038] Figure 4 yes Figure 3 An enlarged schematic diagram of the local structure of the terahertz traveling wave tube is shown.

[0039] In the above drawings, the meanings of the reference numerals are as follows:

[0040] 1-Electron gun assembly;

[0041] 101- cathode;

[0042] 102-focusing pole;

[0043] 103- anode;

[0044] 2- High frequency interaction components;

[0045] 201-Electronic channel;

[0046] 3- Collector;

[0047] 4- Exhaust duct. DETAILED DESCRIPTION

[0048] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0049] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0050] All terms used herein, including technical and scientific terms, have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0051] When using expressions such as "at least one of A, B, and C, etc.", it should generally be interpreted as the meaning of the expression generally understood by those skilled in the art. For example, "a system having at least one of A, B, and C" should include but not be limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc. When using expressions such as "at least one of A, B, or C, etc.", it should generally be interpreted as the meaning of the expression generally understood by those skilled in the art. For example, "a system having at least one of A, B, or C" should include but not be limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.

[0052] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure.

[0053] Figure 1 A flow chart schematically shows a method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology according to an embodiment of the present disclosure; Figure 2 A three-dimensional diagram of a terahertz traveling wave tube according to an embodiment of the present disclosure is schematically shown; Figure 3 yes Figure 2 A cross-sectional view of a terahertz traveling wave tube is shown; Figure 4 yes Figure 3 An enlarged schematic diagram of the local structure of the terahertz traveling wave tube is shown.

[0054] According to an inventive concept of one aspect of the present disclosure, a method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology is provided, such as Figures 1 to 4 As shown, it includes operations S1 to S4.

[0055] According to some embodiments of the present disclosure, operation S1 includes: processing an initial electron channel in the high-frequency interaction component, wherein the diameter of the initial electron channel is smaller than the design diameter of the electron beam.

[0056] According to some embodiments of the present disclosure, operation S2 includes: aligning and assembling the high-frequency interaction component and the electron gun.

[0057] According to some embodiments of the present disclosure, operation S3 includes: evacuating the terahertz traveling wave tube through a vacuum exhaust furnace.

[0058] According to some embodiments of the present disclosure, operation S4 includes: turning on the electron gun, accelerating electrons once using the anode, applying a high voltage to the tube body of the high-frequency interaction component to accelerate electrons twice, and the high voltage is greater than the voltage of the anode.

[0059] The secondary accelerated electrons are used to vaporize and extract the materials around the initial electron channel.

[0060] In this embodiment, the diameter of the initial electron channel processed in the high-frequency interaction component (slow-wave circuit) is smaller than the designed diameter of the electron beam, so that the device works in a state where the electrons have a higher proportion of interception. The initial electron channel will be bombarded by high-energy electrons later, and the material interfering with the electron trajectory will be vaporized and discharged from the traveling wave tube through the vacuum exhaust furnace group to achieve the effect of expanding the hole, so that a terahertz traveling wave tube with a very high electron filling ratio can be manufactured, and the coupling impedance can be close to the theoretical limit.

[0061] According to some embodiments of the present disclosure, the diameter of the initial electron channel processed on the slow wave circuit is smaller than the designed diameter of the electron beam, so that the device works in a state where the electrons have a higher proportion of interception. The initial electron channel will be bombarded by high-energy electrons later, and the material interfering with the electron trajectory will be vaporized and discharged from the traveling wave tube through the exhaust pipe under the action of the vacuum pump group, thereby achieving the effect of expanding the hole.

[0062] According to some embodiments of the present disclosure, the electron gun mainly includes three parts: cathode, focusing electrode and anode, and has a large high-voltage insulation design with the tube body. Among them, the cathode emits electrons, the focusing electrode shapes the electron trajectory, and the anode performs preliminary acceleration on the electrons. The tube body potential can be much higher than the anode, and the electrons are accelerated twice. The electrons after secondary acceleration are ejected to the initial electron channel.

[0063] According to some embodiments of the present disclosure, after turning on the electron gun, the step further includes: monitoring the collector current and calculating the ratio to the total current to obtain the electron flux rate. When the electron flux rate is greater than a preset threshold, it indicates that the gasification and hole expansion is completed.

[0064] According to some embodiments of the present disclosure, the voltage applied to the electron gun and the tube body of the high-frequency interaction component is a pulse voltage, and the duration of a single pulse voltage ranges from 10ns to 200ns.

[0065] According to some embodiments of the present disclosure, after the electron flux rate is greater than a preset threshold, the operation is also included: reducing the voltage applied to the tube body of the high-frequency interaction component to the same as or slightly higher than the anode potential, and at the same time extending the duration of a single pulse to milliseconds to seconds, wherein the range slightly higher includes 0~1kV.

[0066] According to some embodiments of the present disclosure, the voltage applied to the anode ranges from 15 to 30 kV, and the voltage difference between the tube voltage of the high-frequency interaction component and the anode ranges from 50 to 100 kV.

[0067] According to some embodiments of the present disclosure, the process of punching using secondary accelerated electrons also includes the following operations: monitoring the vacuum degree inside the electron gun and the collector, temporarily stopping the punching operation when the vacuum degree inside the electron gun or the collector is lower than a first preset threshold, and restarting the punching operation after the vacuum degree recovers to a second preset threshold, wherein the second preset threshold is greater than the first preset threshold.

[0068] According to some embodiments of the present disclosure, the preparation method according to the above embodiments is characterized in that, in the process of punching using secondary accelerated electrons, it also includes the following operations: monitoring the temperature of the tube body of the high-frequency interaction component, and cooling the tube body by air cooling or water cooling, if the temperature of the tube body is higher than a first preset temperature, temporarily stopping the punching operation, and restarting the punching operation after the temperature of the tube body drops to a second preset temperature again, wherein the second preset temperature is lower than the first preset temperature.

[0069] According to some embodiments of the present disclosure, the preparation method of the terahertz traveling wave tube based on electron injection vaporization expansion technology provided by the present disclosure is applicable to terahertz traveling wave tubes with various forms of electron injection, such as single cylinder, strip injection, planar multi-injection, annular multi-injection, etc.

[0070] The technical solution of the present disclosure is further explained below in conjunction with some specific implementations. It should be understood that the specific embodiments are only for the convenience of those skilled in the art to better understand the technical solution of the present disclosure, and should not be regarded as an inappropriate limitation on the protection scope of the present disclosure.

[0071] Embodiment 1

[0072] An initial electron channel with a smaller diameter is processed on the slow-wave circuit, and the diameter of the initial electron channel is 0.05 mm.

[0073] Complete the centering assembly and baking of the entire tube, and control the manufacturing accuracy of the terahertz traveling wave tube between 20 and 30 microns.

[0074] On the drying table, keep the vacuum pump group running continuously, and adjust the voltage of the tube body and the anode to make the electron gun work in the electron expansion mode and the injection wave interaction mode.

[0075] First, adjust the electron gun to work in the electron expansion mode. In this mode, the tube body has a higher potential than the anode, such as 50-100kV, a shorter power-on time, such as 100ns, and a single pulse operation. The initial electron beam channel aperture on the slow wave circuit is expanded layer by layer using instantaneous high-energy electron beam.

[0076] During the hole expansion process, fans or water cooling are used to dissipate the heat of the tube body. Close attention should be paid to the changes in the surface temperature of the tube body and the vacuum degree inside the tube. If the vacuum degree deteriorates, for example, worse than 1.0×10 -6Pa, the hole expansion is suspended and the vacuum pump group is given sufficient working time so that the vacuum degree inside the tube can be restored to the ideal value.

[0077] The electron flow rate is calculated and observed by the ratio of the collector current to the total current. When a higher proportion of electrons reach the collector, such as more than 95%, it means that the electron injection channel expansion is completed.

[0078] Then the electron gun is restored to the injection wave interaction mode, that is, the tube body and the anode are at the same potential, or tens to hundreds of volts, in order to fine-tune the electron trajectory and pull out a long pulse, such as milliseconds or even seconds. With this structure and testing method, a terahertz traveling wave tube with a very high electron filling ratio can be manufactured, the coupling impedance can be close to the theoretical limit, the electron interception ratio is low, and there will be a sufficiently long and large microwave power output.

[0079] According to some embodiments of the present disclosure, the manufacturing accuracy of the terahertz traveling wave tube is controlled between 20 and 30 microns through a special precision adjustment and welding device (such as a three-coordinate measuring machine).

[0080] It should be noted that in traditional terahertz traveling wave tubes, the insulation capacity of the cathode and anode is relatively high, generally up to 15-50 kV, while the anode is directly short-circuited with the tube body or can only withstand 2-5 kV of insulation. If the voltage of the cathode and anode is simply switched and several hundred kilovolts are used to pull electrons directly, the field strength in the cathode region will be too large, the current pulled out will be too much, the space charge force will be too large, and the electron trajectory will be inconsistent with that during normal operation; if only the voltage required for the normal operation of the terahertz traveling wave tube is used, such as 20-25 kV, the electron energy is not enough to achieve the effect of vaporization and hole expansion. Long-term bombardment will also cause the material around the inner wall of the hole to melt, forming a metal molten ball that accumulates around the channel, destroying the structure of the slow-wave circuit.

[0081] According to some embodiments of the present disclosure, completion of hole expansion does not mean that all initial electron channel areas are expanded to a certain value, but that according to the pulse trajectory of the electrons, some areas may be expanded to a diameter of 0.07 mm, and some areas may be expanded to a diameter of 0.09 mm.

[0082] Embodiment 2

[0083] In operation S4, the parameters in Table 1 may be used to set the points of each structure.

[0084] Table 1

[0085]

[0086] According to another aspect of the invention disclosed herein, a terahertz traveling wave tube based on electron injection gasification hole expansion technology is also provided. Figures 2 to 4 As shown, the terahertz traveling wave tube includes: an electron gun assembly, a high-frequency interaction assembly and a collector. The electron gun assembly 1 includes a cathode 101, a focusing electrode 102 and an anode 103, and the electron gun assembly 1 is used to generate an electron beam. The high-frequency interaction assembly 2 includes an electron channel 201, one end of which is centrally connected to the output end of the electron gun assembly 1, and the electron channel 201 is suitable for exchanging the energy of the electron beam to electromagnetic waves, wherein the electron channel 201 is punched out by the preparation method as described above. The collector 103 is connected to the other end of the electron channel 201.

[0087] According to some embodiments of the present disclosure, the terahertz traveling wave tube has three exhaust pipes 4 for vacuuming, and the three exhaust pipes 4 are respectively opened in the area near the front end of the electron gun near the anode 103, the tail end of the electron gun away from the anode 103, and the end of the collector 3 away from the high-frequency interaction component 2.

[0088] In this embodiment, the exhaust pipe 4 is provided at the front end of the electron gun near the anode 103, and its vacuum outlet is located between the electron gun and the high-frequency interaction component, the purpose of which is to prevent the high-frequency exhaust gas from diffusing to the cathode area. The vacuum outlet of the exhaust channel 4 opened at the tail end of the electron gun away from the anode 103 is located at the tail of the cathode, and is used to discharge the gas released when the cathode area works at high temperature. The end of the collector 3 away from the high-frequency interaction component 2 is used to discharge the evaporated gas diffused there.

[0089] According to some embodiments of the present disclosure, the electron gun assembly 1 is a multi-layered enveloped electron gun capable of generating a suitable electron beam having a desired shape and a speed slightly faster than the phase velocity of electromagnetic waves, so as to facilitate energy exchange with electromagnetic waves.

[0090] According to some embodiments of the present disclosure, the high-frequency interaction component 2 is the core part of the traveling wave tube, and its main function is to reduce the phase velocity of the electromagnetic wave so that it is "synchronized" with the velocity of the electron beam so that the energy of the electron beam can be exchanged to the electromagnetic wave to the maximum extent.

[0091] According to some embodiments of the present disclosure, a PPM (Periodic Permanent Magnet) magnetic focusing system is also included to constrain the electron beam so that it is not intercepted by the slow-wave structure and consumes energy, while at the same time making the electron beam as close to the slow-wave structure as possible to complete sufficient energy exchange.

[0092] According to some embodiments of the present disclosure, the main function of the collector 3 is to collect the acted electron beam and recover a part of the DC energy to improve the efficiency of the whole tube.

[0093] According to some embodiments of the present disclosure, the collector 3 is a multi-stage step-down collection structure for recovering the energy of electrons.

[0094] According to some embodiments of the present disclosure, the metal material for collecting electrons of the collector 3 has more direct connection surfaces with the outer shell, without ceramic or vacuum insulation in between, and has small thermal resistance and better heat dissipation performance.

[0095] According to some embodiments of the present disclosure, the collector 3 has a compact structure and is easy to manufacture: the three-pole step-down collector structure is relatively simple and compact, and is easy to manufacture and integrate into the microwave tube. This not only reduces production costs, but also helps to improve the reliability and maintainability of the equipment.

[0096] According to some embodiments of the present disclosure, the collector 3 is easy to adjust and optimize, and the performance of the three-pole step-down collector can be optimized by adjusting the potential and shape between the electrodes. This flexibility enables the collector to adapt to different working environments and application requirements, improving the adaptability and versatility of the collector.

[0097] According to some embodiments of the present disclosure, the terahertz traveling wave tube also includes an input / output coupling device, which is a mechanism for inputting and outputting high-frequency energy in the traveling wave tube. Taking the 1.03 THz traveling wave tube as an example, the external interface of the terahertz traveling wave tube of the present invention adopts a WR1.0 rectangular waveguide, and the length and width of the rectangle are 0.2540 mm*0.1270 mm respectively.

[0098] The method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology and the terahertz traveling wave tube provided by the embodiments of the present disclosure have the following beneficial effects compared with the prior art:

[0099] (1) Improving the electron filling ratio limit: The electron injection gasification hole expansion technology can effectively increase the electron injection filling ratio through a specific process, making it close to or even reaching the theoretical electron filling ratio limit. It can enable more electrons to participate in the energy exchange process with electromagnetic waves, thereby improving the amplification efficiency and output power of the traveling wave tube.

[0100] (2) It can reduce the alignment requirements. In traditional traveling wave tubes, the alignment accuracy between the electron beam and the slow-wave structure has a significant impact on the performance of the device. However, the terahertz traveling wave tube based on electron injection vaporization expansion technology reduces the alignment accuracy requirements by optimizing the shape and distribution of the electron beam. This makes the manufacturing and debugging process simpler and improves the reliability and stability of the device.

[0101] (3) Improve power output. Due to the increase in electron injection filling ratio, the terahertz traveling wave tube based on electron injection gasification expansion technology can provide higher output power. This is of great significance for application scenarios that require high power output.

[0102] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A method for preparing a terahertz traveling wave tube based on electron injection gasification hole expansion technology. It is characterized in that include: Processing an initial electron channel in the high-frequency interaction component, wherein the diameter of the initial electron channel is smaller than the designed diameter of the electron beam; Aligning and assembling the high frequency interaction component and the electron gun; The terahertz traveling wave tube is evacuated by a vacuum exhaust furnace; Turning on the electron gun, accelerating the electrons once using the anode, applying a high voltage to the tube body of the high-frequency interaction component to accelerate the electrons twice, wherein the high voltage is greater than the voltage of the anode; The second accelerated electrons are used to vaporize and extract the material around the initial electron channel.

2. The preparation method according to claim 1, It is characterized in that After the electron gun is turned on, the method further comprises: The collector current is monitored and the ratio to the total current is calculated to obtain the electron flow rate. When the electron flow rate is greater than a preset threshold, it indicates that the gasification and pore expansion is completed.

3. The preparation method according to claim 1, It is characterized in that The voltage applied to the electron gun and the tube body of the high-frequency interaction component is a pulse voltage, and the duration of a single pulse voltage ranges from 10ns to 200ns.

4. The preparation method according to claim 2, It is characterized in that When the electronic circulation rate is greater than the preset threshold, the following operations are also included: The voltage applied to the tube of the high-frequency interaction component is reduced to the same level as or slightly higher than the anode potential, and the duration of a single pulse is extended to the millisecond level to the second level, wherein the slightly higher range includes 0~1kV.

5. The preparation method according to claim 1, It is characterized in that The voltage applied to the anode ranges from 15 to 30 kV, and the voltage difference between the tube of the high-frequency interaction component and the anode ranges from 50 to 100 kV.

6. The preparation method according to claim 1, It is characterized in that The process of punching with secondary accelerated electrons also includes the following operations: Monitor the vacuum degree in the electron gun and the collector. When the vacuum degree in the electron gun or the collector is lower than a first preset threshold, temporarily stop the punching operation, and restart the punching operation after the vacuum degree recovers to a second preset threshold, wherein the second preset threshold is greater than the first preset threshold.

7. The preparation method according to claim 1, It is characterized in that The preparation method according to claim 1 is characterized in that, in the process of punching with secondary accelerated electrons, it also includes the following operations: The temperature of the tube body of the high-frequency interaction component is monitored and cooled by air cooling or water cooling. If the temperature of the tube body is higher than a first preset temperature, the punching operation is temporarily stopped, and the punching operation is restarted after the temperature of the tube body is lowered to a second preset temperature, wherein the second preset temperature is lower than the first preset temperature.

8. A terahertz traveling wave tube based on electron injection gasification hole expansion technology, It is characterized in that include: An electron gun assembly, including a cathode, a focusing electrode and an anode, for generating an electron beam; A high frequency interaction component, comprising an electron channel, one end of which is centrally connected to the output end of the electron gun component, the electron channel being suitable for exchanging the energy of the electron beam into electromagnetic waves, wherein the electron channel is punched out by the preparation method according to any one of claims 1 to 7; as well as The collector is connected to the other end of the electron channel.

9. The terahertz traveling wave tube according to claim 8, It is characterized in that The terahertz traveling wave tube has three exhaust pipes for vacuuming, which are respectively opened in the area near the anode near the front end of the electron gun, the tail end of the electron gun away from the anode, and the end of the collector away from the high-frequency interaction component.

10. The terahertz traveling wave tube according to claim 8 or 9, It is characterized in that The collector is a multi-stage step-down collector structure for recovering the energy of electrons.

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