Half-bridge power module and vehicle

Abstract

The invention relates to a half-bridge power module and a vehicle, and the half-bridge power module comprises a bottom plate, a lining plate, a plurality of chip units, a DC terminal, an AC terminal, and a signal terminal. The lining plate comprises a first copper-clad layer, a ceramic base layer and a second copper-clad layer which are laminated in sequence; the first copper-clad layer is connected with the bottom plate; a plurality of chip units are respectively arranged on the second copper-clad layer of the lining plate along a first direction; the chip unit comprises a plurality of silicon carbide chips arranged along a second direction, and the silicon carbide chips are electrically connected with the second copper-clad layer of the lining plate; wherein the second direction is perpendicular to the first direction; the direct current terminal is electrically connected with the second copper-clad layer of the lining plate; the alternating current terminal is electrically connected with the second copper-clad layer of the lining plate; the direct-current terminal and the alternating-current terminal are arranged on the two sides of the lining plate in the second direction; and the signal terminal is electrically connected with the second copper-clad layer of the lining plate.

Description

Technical Field

[0001] The present application relates to the technical field of electronic devices, and in particular to a half-bridge power module and a vehicle. Background Art

[0002] Energy conservation and consumption reduction are increasingly becoming the focus of industrial development in various fields. The application of frequency conversion technology in energy conservation and low carbon is of great importance, which has greatly promoted the development of its core component - power modules. As a third-generation semiconductor, silicon carbide power devices have become the most promising semiconductor material in the field of power electronics due to their large bandgap, high breakdown field strength, high saturation drift rate, and high thermal conductivity.

[0003] However, there are still many limitations in the use of power modules in terms of parasitic inductance, high-temperature reliability, manufacturing cost, etc., which affect the power modules from fully exerting their power efficiency. Summary of the invention

[0004] Based on this, it is necessary to provide a half-bridge power module and a vehicle to improve the working efficiency of the power module.

[0005] As one aspect of the present application, a half-bridge power module is provided, comprising:

[0006] A lining board, wherein the lining board is stacked in sequence and comprises a first copper-clad layer, a ceramic base layer, and a second copper-clad layer; the first copper-clad layer is connected to the bottom plate;

[0007] A plurality of chip units, wherein the plurality of chip units are respectively arranged on the second copper-clad layer of the liner along a first direction; the chip unit comprises a plurality of silicon carbide chips arranged along a second direction, and the silicon carbide chips are electrically connected to the second copper-clad layer of the liner; wherein the second direction is perpendicular to the first direction;

[0008] a DC terminal, the DC terminal being electrically connected to the second copper cladding layer of the liner;

[0009] an AC terminal, the AC terminal being electrically connected to the second copper cladding layer of the liner; the DC terminal and the AC terminal being arranged on both sides of the liner along the second direction;

[0010] A signal terminal is electrically connected to the second copper cladding layer of the substrate.

[0011] In one embodiment, it also includes:

[0012] A bonding copper clip, one end of which is electrically connected to the source electrode of the silicon carbide chip, and the other end of which is electrically connected to the second copper cladding layer of the liner.

[0013] In one embodiment, the bonding copper clip is in a bridge-shaped ribbon structure.

[0014] In one of the embodiments, the plurality of silicon carbide chips of two adjacent chip units are aligned and / or staggered with each other along the first direction.

[0015] In one embodiment, it also includes:

[0016] A plurality of gate resistors are electrically connected to the second copper clad layer of the liner; and the plurality of gate resistors are connected to the plurality of silicon carbide chips in a one-to-one correspondence via bonding wires.

[0017] In one embodiment, the DC terminal is configured as a three-pin terminal structure; and the AC terminal is configured as a single-pin terminal structure.

[0018] In one of the embodiments, a pin fin is provided on a side of the bottom plate opposite to the lining plate; wherein the bottom plate is made of copper, and the cross-sectional shape of the pin fin is elliptical.

[0019] In one embodiment, it also includes:

[0020] A plastic-encapsulated shell is connected to a side of the bottom plate opposite to the lining plate, and the lining plate is located in an inner cavity of the plastic-encapsulated shell.

[0021] In one embodiment, the material of the plastic package shell is epoxy resin.

[0022] As another aspect of the present application, a vehicle is provided, comprising the half-bridge power module as described above.

[0023] In the present application, the chip is individually connected to the liner coating, which reduces the occurrence of crosstalk and noise inductance, helps reduce parasitic inductance, improves power density, and makes the overall structure of the half-bridge power module more compact and more efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of an exploded structure of a half-bridge power module provided in an embodiment of the present application is shown.

[0025] Figure 2 A schematic diagram of the layout structure of chips on a liner in a half-bridge power module provided in an embodiment of the present application is shown.

[0026] Figure 3 A schematic structural diagram of a bonding copper clip in a half-bridge power module provided in an embodiment of the present application is shown.

[0027] Figure 4 A schematic structural diagram of a base plate in a half-bridge power module provided in an embodiment of the present application is shown.

[0028] Figure 5 A schematic structural diagram of a plastic-encapsulated housing in a half-bridge power module provided in an embodiment of the present application is shown.

[0029] Figure Number:

[0030] 100- lining board;

[0031] 101-first copper cladding layer;

[0032] 102-ceramic base;

[0033] 103- second copper cladding layer;

[0034] 200-Silicon carbide chip;

[0035] 300-DC terminal;

[0036] 400-AC terminal;

[0037] 500-signal terminal;

[0038] 600-bonded copper clip;

[0039] 700-gate resistor;

[0040] 800- plastic shell;

[0041] 900-base plate;

[0042] 901-pin wing. DETAILED DESCRIPTION

[0043] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0044] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0045] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0046] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0047] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0048] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0049] See also Figures 1 to 5 As shown, Figure 1 FIG. 1 shows an exploded structural diagram of a half-bridge power module provided in an embodiment of the present application. Figure 2 The schematic diagram of the layout structure of the chips on the liner in the half-bridge power module provided in one embodiment of the present application is shown. Figure 3A schematic diagram of the structure of a bonding copper clip in a half-bridge power module provided in an embodiment of the present application is shown. Figure 4 The figure shows a schematic diagram of the structure of a bottom plate in a half-bridge power module provided in an embodiment of the present application. Figure 5 The schematic diagram of the structure of the plastic package shell in the half-bridge power module provided by an embodiment of the present application is shown. The half-bridge power module provided by an embodiment of the present application includes a base plate 900, a liner 100, a plurality of chip units, a DC terminal 300, an AC terminal 400 and a signal terminal 500. The liner 100 is sequentially stacked to include a first copper clad layer 101, a ceramic base layer 102 and a second copper clad layer 103; the first copper clad layer 101 is connected to the base plate 900; the plurality of chip units are respectively arranged along a first direction (reference Figure 2 The chip unit includes a plurality of copper-clad layers 103 and a plurality of copper-clad layers 104 along a second direction (in the x direction shown in FIG. Figure 2 The silicon carbide chips 200 are arranged in the y direction (as shown in FIG. 1 ), and the silicon carbide chips 200 are electrically connected to the second copper clad layer 103 of the liner 100; wherein the second direction (as shown in FIG. 1 ) is Figure 2 The y direction shown in the figure) is perpendicular to the first direction; the DC terminal 300 is electrically connected to the second copper clad layer 103 of the liner 100; the AC terminal 400 is electrically connected to the second copper clad layer 103 of the liner 100; the DC terminal 300 and the AC terminal 400 are arranged along the second direction (reference Figure 2 The signal terminals 500 are electrically connected to the second copper clad layer 103 of the substrate 100 .

[0050] In this embodiment, the liner adopts a three-layer sandwich structure with a ceramic base layer and copper clad on both sides, and its mechanical properties can be well adapted to the silicon carbide chip, and it has low thermal resistance and is conducive to heat dissipation. Optionally, the material of the ceramic base layer can be SiN.

[0051] In some embodiments, the silicon carbide chip 200 is specifically a silicon carbide MOSFET chip. The silicon carbide MOSFET chip has a small chip size and high power density. Its application power density can reach 250kW / cm², and the junction temperature reaches 200°C. The silicon carbide MOSFET chip also has relatively high requirements for packaging. In this embodiment, the material of the plastic package shell 800 is epoxy resin. Epoxy resin is an ideal electrical insulator. It has many properties that traditional silicone gel does not have, such as excellent heat dissipation, waterproof and dustproof, chemical resistance, better mechanical properties and airtightness.

[0052] The silicon carbide MOSFET chip selected in this embodiment has a smaller junction capacitance, can complete the switching process in a very short time, and causes a very high current change rate. The corresponding parasitic inductance of the plastic package housing 800 used in this embodiment is small, and will not cause serious voltage overshoot, oscillation, electromagnetic interference and other problems under a very high current change rate, which can effectively avoid damage to the device or even safety accidents.

[0053] The plastic-encapsulated shell 800 is connected to the side of the bottom plate 900 relative to the liner 100. At this time, the inner cavity of the plastic-encapsulated shell 800 and the bottom plate 900 are enclosed to form a package inner cavity, and the liner and various devices on the liner are enclosed in the inner cavity of the plastic-encapsulated shell 800 and the bottom plate 900 to form a package inner cavity. The plastic-encapsulated shell 800 provided in this embodiment can effectively reduce the parasitic inductance introduced by the package, and reduce the voltage spikes and oscillations caused by the parasitic inductance generated in the package inner cavity.

[0054] In this embodiment, the plastic package housing 800 is integrally formed at high temperature using a thermosetting material epoxy resin. The plastic package housing provided in this embodiment has good airtightness and high temperature resistance, thereby improving the reliability of the power module.

[0055] In some optional embodiments, it further comprises: a bonding copper clip 600, one end of the bonding copper clip 600 is electrically connected to the source electrode of the silicon carbide chip 200, and the other end of the bonding copper clip 600 is electrically connected to the second copper clad layer 103 of the liner 100. In this embodiment, each silicon carbide chip 200 is interconnected with the liner through a separate bonding copper clip 600, which can effectively reduce crosstalk and noise.

[0056] It should be noted here that the drain of the silicon carbide chip is located on the side of the silicon carbide chip relative to the second copper clad layer 103 of the liner 100, that is, the drain of the silicon carbide chip can be directly welded on the second copper clad layer 103 of the liner 100. The source of the silicon carbide chip is located on the side of the silicon carbide chip opposite to the second copper clad layer 103 of the liner 100, and the source of the silicon carbide chip and the liner need to be bonded by a bonding copper clip 600. Specifically, one end of the bonding copper clip 600 is welded to the source of the silicon carbide chip 200, and the other end of the bonding copper clip 600 is welded to the second copper clad layer 103 of the liner 100. Specifically, a formic acid reflow soldering process is used between the drain of the silicon carbide chip and the second copper clad layer 103 of the liner 100, between the source of the silicon carbide chip and the bonding copper clip 600, and between the bonding copper clip 600 and the second copper clad layer 103 of the liner 100 to achieve interconnection between devices. The power cycle life in seconds can reach more than 6w times. When subjected to temperature shock, the performance of the power module will not change, and no cracking, obvious stratification, etc. will occur.

[0057] In an optional embodiment, the bonding copper clip 600 is in a strip-shaped structure, which increases the cross-sectional area of ​​the interconnection structure and reduces the length of the commutation loop. Generally, the size of the bonding copper clip 600 is designed to be relatively small to reduce the mass of copper and reduce thermal push stress strain during the process and operation.

[0058] In an optional embodiment, the bonding copper clip 600 is a bridge-shaped structure, which is conducive to increasing the fluidity of the plastic packaging material and reducing the impact caused by delamination. Generally, the size of the bonding copper clip 600 is designed to be relatively small to reduce the mass of copper and reduce thermal push stress strain during the process and operation.

[0059] In an optional embodiment, the bonding copper clip 600 is a bridge-shaped strip structure. The cross-sectional area of ​​the interconnection structure is increased, the length of the commutation loop is reduced, and the fluidity of the plastic encapsulation material is increased, reducing the impact caused by delamination. Generally, the size of the bonding copper clip 600 is designed to be relatively small to reduce the mass of copper and reduce thermal push stress strain during the process and operation.

[0060] Optionally, the edge of the bonding copper clip 600 is chamfered to facilitate welding and increase the process window.

[0061] In some embodiments, the plurality of silicon carbide chips 200 of two adjacent chip units are arranged along the first direction (reference Figure 2 The two members are arranged opposite to each other (in the x-direction shown).

[0062] In some embodiments, the plurality of silicon carbide chips 200 of two adjacent chip units are arranged along the first direction (reference Figure 2 The two members are arranged offset with respect to each other (in the x-direction shown).

[0063] In some embodiments, the plurality of silicon carbide chips 200 of two adjacent chip units are arranged along the first direction (reference Figure 2 The x-direction shown in the figure) is aligned and staggered with each other. For specific arrangement methods, please refer to Figure 2 As shown, the four chip units are arranged along a first direction (reference Figure 2 x direction shown in the figure) are arranged in sequence, along the first direction (reference Figure 2 The first chip unit, the second chip unit, the third chip unit and the fourth chip unit are arranged from left to right in sequence along the second direction (reference Figure 2 Four silicon carbide chips 200 are arranged in the second chip unit along the second direction (in the y direction shown in FIG. 1 ). Four silicon carbide chips 200 are arranged in the second chip unit along the second direction (in the y direction shown in FIG. 1 ). Figure 2Four silicon carbide chips 200 are arranged along the second direction (reference direction) in the fourth chip unit. Figure 2 Four silicon carbide chips 200 are arranged in the first direction (in the y direction shown in FIG. 1 ). The four silicon carbide chips 200 in the first chip unit and the four silicon carbide chips 200 in the second chip unit are arranged in the first direction (in the y direction shown in FIG. Figure 2 The four silicon carbide chips 200 in the second chip unit and the four silicon carbide chips 200 in the third chip unit are arranged in a staggered manner in the first direction (reference direction). Figure 2 The four silicon carbide chips 200 in the third chip unit and the four silicon carbide chips 200 in the fourth chip unit are aligned with each other in the first direction (reference direction). Figure 2 They are arranged offset with respect to each other in the x-direction shown in the figure.

[0064] In some embodiments, the invention further comprises: a plurality of gate resistors 700. The gate resistors 700 are electrically connected to the second copper clad layer 103 of the substrate 100; the plurality of gate resistors 700 are connected to the plurality of silicon carbide chips 200 in a one-to-one correspondence through bonding wires. The gate resistors 700 and the silicon carbide chips 200 can be arranged on the substrate in a manner such that the gate resistors 700 are arranged along a first direction (reference Figure 2 The first column of gate resistor groups, the second column of gate resistor groups, the third column of gate resistor groups, and the fourth column of gate resistor groups are arranged from left to right in sequence (in the x direction shown). The number of gate resistors 700 arranged in each column is the same as the number of silicon carbide chips 200, that is, four gate resistors 700 are arranged in the first column of gate resistor groups, the second column of gate resistor groups, the third column of gate resistor groups, and the fourth column of gate resistor groups, wherein the first column of gate resistor groups are arranged on either side of the first chip unit, the second column of gate resistor groups are arranged on either side of the second chip unit, the third column of gate resistor groups are arranged on either side of the third chip unit, and the fourth column of gate resistor groups are arranged on either side of the fourth chip unit. In this embodiment, the distance between each column of gate resistor groups and each silicon carbide chip unit can be reduced, the crosstalk between the lean parallel silicon carbide chips can be improved, and the noise can be effectively reduced.

[0065] In an optional embodiment, the arrangement of the gate resistor 700 and the silicon carbide chip 200 on the substrate can be referred to Figure 2 As shown, the gate resistor 700 is arranged along a first direction (reference Figure 2 The first column of gate resistor groups, the second column of gate resistor groups, and the third column of gate resistor groups are arranged from left to right in the x direction shown in the figure. The first column of gate resistor groups is located on the left side of the first chip unit. The number of gate resistors arranged in the first column of gate resistor groups is the same as the number of silicon carbide chips in the first chip unit. Figure 2Four gate resistors 700 are arranged in the first column of gate resistor groups shown in FIG. The third column of gate resistor groups is located on the right side of the fourth chip unit. The number of gate resistors 700 arranged in the third column of gate resistor groups is the same as the number of the silicon carbide chips 200 in the fourth chip unit. Figure 2 Four gate resistors 700 are arranged in the third column of gate resistor groups shown in FIG. The second column of gate resistor groups is located between the second chip unit and the third chip unit. The number of gate resistors 700 arranged in the second column of gate resistor groups is the sum of the number of the silicon carbide chips 200 in the second chip unit and the number of the silicon carbide chips 200 in the third chip unit. Figure 2 Eight gate resistors 700 are arranged in the second column of gate resistor groups shown in FIG. The arrangement of the gate resistors 700 adopted in this embodiment reduces the space occupied by the whole, ensures the integration performance and helps to reduce the size of the device. In this embodiment, the length of the current loop is shortened, the response time of the inductor element to the current change is reduced, and thus the stray inductance is reduced. In this embodiment, by reasonable planning and layout, the conductor paths with opposite current directions are placed adjacent to each other to achieve the mutual inductance cancellation of the loop.

[0066] In an optional embodiment, various other sensing devices may be welded on the lining board 100 (ie, the second copper clad layer 103 of the lining board 100 ) to collect corresponding sensing data, which will not be listed one by one or specifically limited here.

[0067] In some embodiments, the DC terminal 300 is configured as a three-terminal structure; the AC terminal 400 is configured as a single-terminal structure. In this embodiment, a laminated structure is used to integrate the power supply end and the load end of the power module into a small plastic package, which is conducive to reducing the inductance and improving the power density.

[0068] In some embodiments, a pin fin 901 is provided on a side of the bottom plate 900 opposite to the liner 100. Single-sided water cooling is used to improve the heat dissipation effect of the half-bridge power module. The bottom plate 900 is made of copper, and the cross-sectional shape of the pin fin 901 is elliptical.

[0069] In some embodiments, a lead frame is also included. The lead frame is connected to the liner (i.e., the side of the liner opposite to the base plate) by welding, sintering or ultrasonic welding. Specifically. It should be noted here that the liner at this time has been arranged with silicon carbide chips, DC terminals, AC terminals, signal terminals and gate resistors. In this embodiment, the lead frame can generally be welded to the edge of the liner (i.e., the side of the liner opposite to the base plate). In this embodiment, a penetration groove is added to the position of the welding terminal of the lead frame, which can effectively improve the problem of delamination. In this embodiment, stress release holes can also be set on the lead frame to reduce thermal stress strain. In this embodiment, a four-head terminal structure is set at the position of the welding terminal of the lead frame, which can effectively improve the welding quality, while reducing the welding pressure and reducing the risk of damage to the ceramic base of the liner.

[0070] In another embodiment of the present application, a vehicle is also provided, including the half-bridge power module as described above. The vehicle is mainly suitable for the field of new energy vehicles, and the half-bridge power module can have a decisive influence on the performance, efficiency, cost, safety and reliability of the vehicle's electric drive system and even the entire vehicle. The half-bridge power module provided in this embodiment is configured with a silicon carbide MOSFET chip to achieve the purpose of reducing the switching loss and conduction loss of the inverter and improve the efficiency of the electric drive system. The efficiency of the electric drive system has a significant impact on the power consumption of the entire vehicle. High operating cycle efficiency can reduce the battery load (cost, safety), reduce mileage anxiety, save energy and reduce operating costs, and reduce charging time and frequency.

[0071] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0072] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A half-bridge power module, characterized in that: include: A lining board, wherein the lining board comprises a first copper-clad layer, a ceramic base layer, and a second copper-clad layer stacked in sequence; The first copper clad layer is connected to the bottom plate; A plurality of chip units, wherein the plurality of chip units are respectively arranged on the second copper-clad layer of the liner along a first direction; the chip unit comprises a plurality of silicon carbide chips arranged along a second direction, and the silicon carbide chips are electrically connected to the second copper-clad layer of the liner; wherein the second direction is perpendicular to the first direction; a DC terminal, the DC terminal being electrically connected to the second copper cladding layer of the liner; an AC terminal, the AC terminal being electrically connected to the second copper cladding layer of the liner; the DC terminal and the AC terminal being arranged on both sides of the liner along the second direction; A signal terminal is electrically connected to the second copper cladding layer of the substrate.

2. The half-bridge power module according to claim 1, characterized in that: Also includes: A bonding copper clip, one end of which is electrically connected to the source electrode of the silicon carbide chip, and the other end of which is electrically connected to the second copper cladding layer of the liner.

3. The half-bridge power module according to claim 2, characterized in that: The bonding copper clip is in a bridge-shaped belt structure.

4. The half-bridge power module according to claim 1, characterized in that: The plurality of silicon carbide chips of two adjacent chip units are arranged in alignment and / or staggered relationship with each other along the first direction.

5. The half-bridge power module according to claim 4, characterized in that: Also includes: A plurality of gate resistors, wherein the gate resistors are electrically connected to the second copper clad layer of the liner; The plurality of gate resistors are connected to the plurality of silicon carbide chips in a one-to-one correspondence via bonding wires.

6. The half-bridge power module according to claim 1, characterized in that: The DC terminal is configured as a three-terminal structure; the AC terminal is configured as a single-terminal structure.

7. The half-bridge power module according to claim 1, characterized in that: Also includes: A plastic-encapsulated shell is connected to a side of the bottom plate opposite to the lining plate, and the lining plate is located in an inner cavity of the plastic-encapsulated shell.

8. The half-bridge power module according to claim 7, characterized in that: The material of the plastic-sealed shell is epoxy resin.

9. The half-bridge power module according to any one of claims 1 to 8, characterized in that: A pin fin is provided on a side of the bottom plate opposite to the lining plate; wherein the bottom plate is made of copper, and the cross-sectional shape of the pin fin is elliptical.

10. A vehicle, characterized in that: Comprising a half-bridge power module as claimed in any one of claims 1 to 9.

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