Gallium nitride sensor and preparation method and device thereof

Abstract

The invention relates to the technical field of gallium nitride sensor preparation, in particular to a gallium nitride sensor and a preparation method and device. The preparation assembly comprises a bottom moving unit, a moving frame, a plurality of springback units, a lower pressing plate, an anti-skid protection plate, a first driving unit, a first blade, a second driving unit, a second blade and an upper pushing unit, the substrate is cut from the upper portion through the first blade, the size is changed, the second driving unit is started, and the substrate is cut from the side face through the second blade; the thickness of the substrate is changed, finally, the upward pushing unit is started, the lower pressing plate is pushed upwards, then the bottom moving unit drives the moving frame and the lower pressing plate to be away from the substrate and not abut against the substrate any more, the cut substrate is polished, the requirements of different gallium nitride sensors are met, the substrate is prepared conveniently and rapidly, and therefore the preparation efficiency of the gallium nitride sensors is greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of gallium nitride sensor preparation, and in particular to a gallium nitride sensor and a preparation method and device. Background Art

[0002] Currently, the pressure detection range and sensitivity of traditional gallium nitride pressure sensors are designed based on the chip suspension membrane size and thickness. Once the pressure sensor is manufactured, the pressure detection range, accuracy and sensitivity are fixed and cannot be adjusted a second time.

[0003] In the prior art, an epitaxial structure is formed on one side of a second substrate, the epitaxial structure comprising a stacked GaN buffer layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer, the GaN buffer layer being located on the surface of one side of the second substrate; a source, a drain and a gate are formed on a side of the epitaxial structure away from the second substrate, the source and the drain are respectively located on two opposite sides of the gate, and the number of the gates is a positive integer greater than or equal to 2; a channel region is provided between the source and the drain; the side of the second substrate away from the epitaxial structure is etched to form a groove; a first substrate is formed on a side of the second substrate away from the epitaxial structure, wherein the orthographic projection of the channel region on the first substrate at least partially overlaps with the orthographic projection of the groove on the first substrate. The gallium nitride pressure sensor prepared by this method has all the features and advantages of the gallium nitride pressure sensor described above, which will not be repeated here. In general, the gallium nitride pressure sensor prepared by this method has more than two gates. By applying voltage on the gate to control the channel width, thereby controlling the output current between the source and the drain, the pressure detection range of the pressure sensor can be expanded and the accuracy and sensitivity of the pressure sensor can be improved.

[0004] However, in the aforementioned prior art, the substrate is used as the main support body, and then the base layer, the insulating layer and the silicon layer are installed. During the preparation, the substrate and various production materials cannot be cut, and the appropriate substrate size must be manually selected for use, resulting in the inability to quickly prepare the required sizes of different types of gallium nitride sensors. This is very inconvenient and affects the efficiency of gallium nitride sensor preparation. Summary of the invention

[0005] The purpose of the present invention is to provide a gallium nitride sensor and a preparation method and device, so as to solve the problem in the prior art that a substrate is used as the main support body, and then a base layer, an insulating layer and a silicon layer are installed, and the substrate and various production materials cannot be cut during preparation, and a suitable substrate size must be manually selected for use, resulting in the inability to quickly prepare the required sizes of gallium nitride sensors of different models, which is very inconvenient and affects the efficiency of gallium nitride sensor preparation.

[0006] To achieve the above-mentioned object, the present invention provides a gallium nitride sensor preparation device, including a base and a preparation component;

[0007] The preparation component includes a bottom moving unit, a moving frame, multiple rebound units, a lower pressure plate, an anti-slip protection plate, a first driving unit, a first blade, a second driving unit, a second blade and an upper pushing unit. The bottom moving unit is arranged below the base, and the two ends of the moving frame are respectively arranged on the bottom moving unit and the multiple rebound units, and one end of the multiple rebound units away from the moving frame is fixedly connected to the lower pressure plate. The upper pushing unit is arranged inside the base, and the lower pressure plate is placed on the upper pushing unit. The anti-slip protection plate is fixedly connected to the lower pressure plate and is located on one side of the lower pressure plate. The first driving unit is arranged on the lower pressure plate, the first blade is arranged on the first driving unit, the second driving unit is arranged on one side of the base, and the second blade is arranged on the second driving unit.

[0008] Among them, the bottom moving unit includes an electric slide rail, a slider and two brackets. The electric slide rail is fixedly connected to the base through the two brackets and is located below the base. The slider is slidably connected to the electric slide rail. One end of the moving frame is fixedly connected to the slider and is located above the slider.

[0009] Among them, the rebound unit includes a telescopic rod and a spring, the two ends of the telescopic rod are respectively fixedly connected to the other end of the movable frame and the top of the lower pressure plate, the two ends of the spring are respectively movably connected to the other end of the movable frame and the top of the lower pressure plate, and the spring is sleeved on the outside of the telescopic rod.

[0010] Among them, the first driving unit includes a first cylinder, a support plate, a second cylinder, a pressing plate and multiple third cylinders, the first cylinder is fixedly connected to the pressing plate and is located on one side of the pressing plate, the output end of the first cylinder passes through the pressing plate and is fixedly connected to the support plate, the second cylinder is fixedly connected to the support plate and is located above the support plate, the output end of the second cylinder passes through the support plate and is fixedly connected to the pressing plate, multiple third cylinders are fixedly connected to the support plate and are sequentially located above the support plate, the output end of the third cylinder passes through the support plate, and the first blade is bolted to the output ends of multiple third cylinders.

[0011] Among them, the second driving unit includes multiple fourth cylinders and multiple fourth cylinder supports, the multiple fourth cylinder supports are fixedly connected to the base and are distributed in sequence on one side of the base, the multiple fourth cylinders are respectively installed above the corresponding fourth cylinder supports, and the output ends of the multiple fourth cylinders are bolted to the second blade.

[0012] Wherein, the push-up unit includes a fifth cylinder and an push-up plate, the fifth cylinder is fixedly connected to the base and is located below the base, and the output end of the fifth cylinder passes through the base and is fixedly connected to the push-up plate.

[0013] Wherein, the gallium nitride sensor preparation device also includes an ejection component, and the ejection component is arranged on the base.

[0014] Among them, the ejection assembly includes a sixth cylinder, a sixth cylinder support and a horizontal thrust plate. The sixth cylinder support is fixedly connected to the base and is located at one end of the base. The sixth cylinder is installed above the sixth cylinder support, and the horizontal thrust plate is fixedly connected to the output end of the sixth cylinder.

[0015] The present invention also provides a method for preparing a gallium nitride sensor, using the above-mentioned gallium nitride sensor preparation device, comprising the following steps:

[0016] Place the substrate of the gallium nitride sensor into the base, then start the base moving unit to move the moving frame above the substrate;

[0017] Due to the effect of the rebound unit, the lower pressing plate is pressed against the upper push plate, and then approaches the substrate, and the anti-slip protection plate presses against the side of the substrate;

[0018] The first driving unit is started to cut the substrate from above by the first blade to change the size;

[0019] The second driving unit is started to cut the substrate from the side by the second blade to change the thickness of the substrate;

[0020] Finally, the push-up unit starts, and the lower pressing plate substrate is pushed up by the push-up plate, and then the bottom moving unit drives the moving frame and the lower pressing plate away from the substrate, and no longer resists;

[0021] The sixth cylinder starts, driving the horizontal push plate to push the substrate out;

[0022] Polishing the cut substrate to form a base layer on the polished surface;

[0023] A buffer layer is formed on a side of the base layer away from the substrate, a silicon layer is disposed on the base layer, and a second supporting substrate is formed by the buffer layer, the base layer and the silicon layer;

[0024] An insulating layer and a gallium nitride layer are arranged above the silicon layer, and a surface passivation layer is arranged on the gallium nitride layer to protect the gallium nitride layer;

[0025] The anode and the cathode are symmetrically mounted on the surface passivation layer, and the anode and the cathode penetrate through the surface passivation layer and contact the gallium nitride layer.

[0026] The present invention also includes a gallium nitride sensor, which is prepared by the above-mentioned gallium nitride sensor preparation method, including a substrate, a base layer, a buffer layer, a silicon layer, an insulating layer, a surface passivation layer, a gallium nitride layer, an anode and a cathode, wherein the base layer is arranged on the substrate, the buffer layer is arranged above the base layer, the silicon layer is arranged above the buffer layer, the insulating layer is arranged above the silicon layer, the gallium nitride layer is arranged above the insulating layer, the surface passivation layer is arranged above the gallium nitride layer, the anode and the cathode are arranged in sequence above the gallium nitride layer and in contact with the gallium nitride layer.

[0027] A gallium nitride sensor and a preparation method and device of the present invention, wherein the substrate of the gallium nitride sensor is placed inside the base, and then the base moving unit is started to move the moving frame above the substrate. Due to the action of the rebound unit, the lower pressure plate is pressed against the upper part of the push-up unit, and then approaches the substrate. The anti-slip protection plate presses against the side of the substrate, and the first driving unit is started to cut the substrate from the top by the first blade to change the size. The second driving unit is started to cut the substrate from the side by the second blade to change the thickness of the substrate. Finally, the push-up unit is started to push the lower pressure plate substrate upward, and then the bottom moving unit drives the moving frame and the lower pressure plate. Away from the substrate, no longer supporting, polishing the cut substrate, forming a base layer on the polished surface, forming a buffer layer on the side of the base layer away from the substrate, setting a silicon layer on the base layer, relying on the buffer layer, the base layer and the silicon layer to form a second supporting substrate, setting an insulating layer and a gallium nitride layer above the silicon layer, setting a surface passivation layer on the gallium nitride layer to protect the gallium nitride layer, symmetrically installing the anode and the cathode above the surface passivation layer, and making the anode and the cathode penetrate the surface passivation layer and contact the gallium nitride layer. Through the above-mentioned structural setting, the substrate can be automatically cut, and the size and thickness can be changed to adapt to different gallium nitride sensor requirements. The substrate can be prepared conveniently and quickly, thereby greatly improving the preparation efficiency of gallium nitride sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art are briefly introduced below.

[0029] Figure 1 It is a schematic diagram of the overall structure of the first embodiment of the present invention.

[0030] Figure 2 It is an overall cross-sectional view of the first embodiment of the present invention.

[0031] Figure 3 The present invention Figure 2 AA line section view.

[0032] Figure 4 It is a schematic diagram of the overall structure of the second embodiment of the present invention.

[0033] Figure 5 It is an overall cross-sectional view of a second embodiment of the present invention.

[0034] Figure 6 It is a schematic diagram of the overall structure of the third embodiment of the present invention.

[0035] Figure 7 It is an overall cross-sectional view of a third embodiment of the present invention.

[0036] Figure 8 The present invention Figure 7 BB line cross-sectional view.

[0037] Fig. 9 It is a flow chart of the steps of the method for preparing the gallium nitride sensor of the present invention.

[0038] Fig.10 It is a schematic structural diagram of the gallium nitride sensor of the present invention.

[0039] 101-base, 102-movable frame, 103-lower pressure plate, 104-anti-slip protection plate, 105-first blade, 106-second blade, 107-electric slide rail, 108-slider, 109-bracket, 110-telescopic rod, 111-spring, 112-first cylinder, 113-support plate, 114-second cylinder, 115-pressing plate, 116-third cylinder, 117-fourth cylinder, 118-fourth cylinder support, 119-fifth cylinder, 120-upper push plate, 201-sixth cylinder, 202-sixth cylinder support, 203-horizontal push plate, 301-collection box, 302-inclined plate, 401-substrate, 402-base layer, 403-buffer layer, 404-silicon layer, 405-insulating layer, 406-surface passivation layer, 407-gallium nitride layer, 408-anode, 409-cathode. DETAILED DESCRIPTION

[0040] Embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, but should not be construed as limiting the present invention.

[0041] First embodiment:

[0042] See also Figures 1 to 3 ,in Figure 1 is a schematic diagram of the overall structure of the first embodiment of the present invention, Figure 2 is a cross-sectional view of the entire first embodiment of the present invention, Figure 3 The present invention Figure 2AA line cross-sectional view. The present invention provides a gallium nitride sensor preparation device, comprising a base 101 and a preparation component, wherein the preparation component comprises a bottom moving unit, a moving frame 102, a plurality of rebound units, a lower pressing plate 103, an anti-slip protection plate 104, a first driving unit, a first blade 105, a second driving unit, a second blade 106 and an upper push unit, wherein the bottom moving unit comprises an electric slide rail 107, a slider 108 and two brackets 109, the rebound unit comprises a telescopic rod 110 and a spring 111, the first driving unit comprises a first cylinder 112, a support plate 113, a second cylinder 114, a lower pressing plate 103 and a plurality of third cylinders 116, the second driving unit comprises a plurality of fourth cylinders 117 and a plurality of fourth cylinder supports 118, and the upper push unit comprises a fifth cylinder 119 and an upper push plate 120.

[0043] According to this specific embodiment, the substrate 401 of the gallium nitride sensor is placed inside the base 101, and then the moving unit of the base 101 is started, and the moving frame 102 is moved above the substrate 401. Due to the action of the rebound unit, the lower pressure plate 103 is supported above the push-up unit and then approaches the substrate 401. The anti-slip protection plate 104 supports the side of the substrate 401, and the first driving unit is started. The substrate 401 is cut from the top by the first blade 105 to change the size. The second driving unit is started, and the substrate 401 is cut from the side by the second blade 106 to change the thickness of the substrate 401.

[0044] Among them, the bottom movable unit is arranged below the base 101, the two ends of the movable frame 102 are respectively arranged on the bottom movable unit and the multiple rebound units, the ends of the multiple rebound units away from the movable frame 102 are fixedly connected to the lower pressure plate 103, the push-up unit is arranged inside the base 101, the lower pressure plate 103 is placed on the push-up unit, the anti-slip protection plate 104 is fixedly connected to the lower pressure plate 103 and is located on one side of the lower pressure plate 103, the first driving unit is arranged on the lower pressure plate 103, the first blade 105 is arranged on the first driving unit, the second driving unit is arranged on one side of the base 101, and the second blade 106 is arranged on the second driving unit. The substrate 401 of the gallium nitride sensor is placed inside the base 101, and then the moving unit of the base 101 is started, and the moving frame 102 is moved above the substrate 401. Due to the effect of the rebound unit, the lower pressing plate 103 is pressed against the upper part of the push-up unit, and then approaches the substrate 401. The anti-slip protection plate 104 presses against the side of the substrate 401, and the first driving unit is started. The substrate 401 is cut from the top by the first blade 105 to change the size. The second driving unit is started. The substrate 401 is cut from the side by the second blade 106 to change the thickness of the substrate 401. Finally, the push-up unit is started, and the lower pressing plate 1 03 The substrate 401 is pushed up, and then the bottom moving unit drives the moving frame 102 and the lower pressing plate 103 away from the substrate 401, and no longer resists, and the cut substrate 401 is polished to form a base layer 402 on the polished surface, and a buffer layer 403 is formed on the side of the base layer 402 away from the substrate 401, and then a channel layer, an insulating layer 405, a silicon layer 404, a surface passivation layer 406, a gallium nitride layer 407, an anode 408 and a cathode 409 are formed in sequence, thereby automatically cutting the substrate 401, and completing the change of size and thickness to adapt it to different gallium nitride sensor requirements. The preparation of the substrate 401 is convenient and quick, thereby greatly improving the preparation efficiency of gallium nitride sensors.

[0045] Secondly, the electric slide rail 107 is fixedly connected to the base 101 through the two brackets 109 and is located below the base 101. The slider 108 is slidably connected to the electric slide rail 107. One end of the moving frame 102 is fixedly connected to the slider 108 and is located above the slider 108. The electric slide rail 107 is started to drive the slider 108 to move, so that the moving frame 102 drives the lower pressing plate 103 to approach the substrate 401, and the bracket 109 supports the electric slide rail 107.

[0046] At the same time, the two ends of the telescopic rod 110 are respectively fixedly connected with the other end of the moving frame 102 and the upper part of the lower pressing plate 103, and the two ends of the spring 111 are respectively movably connected with the other end of the moving frame 102 and the upper part of the lower pressing plate 103, and the spring 111 is sleeved on the outside of the telescopic rod 110. The spring 111 drives the lower pressing plate 103 to move downward, and the lower pressing plate 103 is pressed against the upper push plate 120 to prevent it from loosening, and then approaches the substrate 401, and relies on the anti-slip protection plate 104 to contact one side of the substrate 401 to complete the pressing and fixing.

[0047] In addition, the first cylinder 112 is fixedly connected to the pressing plate 115 and is located on one side of the pressing plate 115, the output end of the first cylinder 112 passes through the pressing plate 115 and is fixedly connected to the support plate 113, the second cylinder 114 is fixedly connected to the support plate 113 and is located above the support plate 113, the output end of the second cylinder 114 passes through the support plate 113 and is fixedly connected to the pressing plate 115, the plurality of third cylinders 116 are all fixedly connected to the support plate 113 and are sequentially located above the support plate 113, the output end of the third cylinder 116 passes through the support plate 113, and the first blade 105 is bolted to the output ends of the plurality of third cylinders 116. The first cylinder 112 is started to drive the support plate 113 to move, and then the second cylinder 114 is started to drive the pressing plate 115 to move downward to press and fix the substrate 401. At this time, the side and top of the substrate 401 are fixed, and then the third cylinder 116 is started to drive the first blade 105 to move downward to cut the substrate 401.

[0048] Then, the plurality of fourth cylinder supports 118 are all fixedly connected to the base 101 and are sequentially distributed on one side of the base 101. The plurality of fourth cylinders 117 are respectively installed above the corresponding fourth cylinder supports 118, and the output ends of the plurality of fourth cylinders 117 are all bolted to the second blade 106. The fourth cylinder supports 118 support the fourth cylinders 117. First, the push-up unit is started to drive the substrate 401 to move upward, so that a part of the substrate 401 protrudes from the base 101. During the upward movement, the lower pressing plate 103 moves upward, and the spring 111 is compressed to avoid mutual conflict. At this time, the fourth cylinder 117 is started to drive the second blade 106 to move, cut the protruding part of the substrate 401, and complete the cutting operation of the size and thickness of the substrate 401.

[0049] Finally, the fifth cylinder 119 is fixedly connected to the base 101 and is located below the base 101. The output end of the fifth cylinder 119 passes through the base 101 and is fixedly connected to the upper push plate 120. When the fifth cylinder 119 is started, it drives the upper push plate 120 to move, and then drives the substrate 401 and the lower pressure plate 103 to move up and down in the base 101.

[0050] When using a gallium nitride sensor preparation device of the present embodiment, the substrate 401 of the gallium nitride sensor is placed inside the base 101, and then the base 101 moving unit is started, and the moving frame 102 is moved above the substrate 401. Due to the effect of the rebound unit, the lower pressing plate 103 is pressed against the upper part of the push-up unit, and then approaches the substrate 401. The anti-slip protection plate 104 presses against the side of the substrate 401, and the first driving unit is started. The substrate 401 is cut from the top by the first blade 105 to change the size. The second driving unit is started. The substrate 401 is cut from the side by the second blade 106 to change the thickness of the substrate 401. Finally, the push-up unit is started. The lower pressing plate 103 pushes the substrate 401 upward, and then the bottom moving unit drives the moving frame 102 and the lower pressing plate 103 away from the substrate 401, and no longer resists, and the cut substrate 401 is polished to form a base layer 402 on the polished surface, and a buffer layer 403 is formed on the side of the base layer 402 away from the substrate 401, and then a channel layer, an insulating layer 405, a silicon layer 404, a surface passivation layer 406, a gallium nitride layer 407, an anode 408 and a cathode 409 are formed in sequence. Through the above-mentioned structural setting, the substrate 401 can be automatically cut, and the size and thickness can be changed to adapt to different gallium nitride sensor requirements. The preparation of the substrate 401 is convenient and quick, thereby greatly improving the preparation efficiency of the gallium nitride sensor.

[0051] Second embodiment:

[0052] Based on the first embodiment, please refer to Figure 4 and Figure 5 ,in Figure 4 is a schematic diagram of the overall structure of the second embodiment of the present invention, Figure 5 The present invention provides a gallium nitride sensor manufacturing device, which also includes a push-out assembly, wherein the push-out assembly includes a sixth cylinder 201 , a sixth cylinder support 202 and a horizontal push plate 203 .

[0053] According to this specific embodiment, the sixth cylinder support 202 supports the sixth cylinder 201. First, the fifth cylinder 119 is started to drive the upper push plate 120 to move upward, so that the lower pressure plate 103 moves out of the base 101. Then the movable frame 102 drives the lower pressure plate 103 to move so that it is no longer against the upper push plate 120. Then the sixth cylinder 201 is started to drive the horizontal push plate 203 to move. The horizontal push plate 203 passes over the upper push plate 120 to push the substrate 401 out. Then the movable frame 102 drives the lower pressure plate 103 to reset.

[0054] The ejection assembly is disposed on the base 101. The ejection assembly can eject the prepared substrate 401 without manual removal, thus saving labor costs and improving preparation efficiency.

[0055] Secondly, the sixth cylinder support 202 is fixedly connected to the base 101 and is located at one end of the base 101. The sixth cylinder 201 is installed above the sixth cylinder support 202, and the horizontal push plate 203 is fixedly connected to the output end of the sixth cylinder 201. The sixth cylinder support 202 supports the sixth cylinder 201. First, the fifth cylinder 119 is started to drive the upper push plate 120 to move upward, so that the lower pressure plate 103 moves out of the base 101. Then, the moving frame 102 drives the lower pressure plate 103 to move so that it no longer abuts against the upper push plate 120. Then, the sixth cylinder 201 is started to drive the horizontal push plate 203 to move. The horizontal push plate 203 passes above the upper push plate 120 to push out the substrate 401. Then, the moving frame 102 drives the lower pressure plate 103 to reset.

[0056] When using a gallium nitride sensor preparation device of the present embodiment, the sixth cylinder support 202 supports the sixth cylinder 201, and first the fifth cylinder 119 is started to drive the upper push plate 120 to move upward, so that the lower pressure plate 103 moves out of the base 101, and then the movable frame 102 drives the lower pressure plate 103 to move so that it is no longer against the upper push plate 120, and then the sixth cylinder 201 is started to drive the horizontal push plate 203 to move, and the horizontal push plate 203 passes over the upper push plate 120 to push out the substrate 401, and then the movable frame 102 drives the lower pressure plate 103 to reset, thereby pushing out the prepared substrate 401 without manual removal, saving labor costs and improving preparation efficiency.

[0057] Third embodiment:

[0058] The gallium nitride sensor manufacturing device further includes a collection assembly, which is disposed on a side of the base 101 away from the push assembly. The collection assembly includes a collection box 301 and an inclined plate 302, wherein the inclined plate 302 is fixedly connected to the base 101 and is located at the other end of the base 101, and the collection box 301 is placed below the inclined plate 302.

[0059] Based on the second embodiment, please refer to Figures 6 to 8 ,in Figure 6 is a schematic diagram of the overall structure of the third embodiment of the present invention, Figure 7 is a cross-sectional view of the entire third embodiment of the present invention, Figure 8 The present invention Figure 7 The present invention provides a gallium nitride sensor manufacturing device, which also includes a collection component, wherein the collection component includes a collection box 301 and an inclined plate 302.

[0060] According to this specific embodiment, the inclined plate 302 can guide and limit the substrate 401 pushed out of the upper push plate 120 to prevent it from sliding to the ground, so that it can smoothly enter the collection box 301 for storage, so that the staff can uniformly collect and process it for the subsequent preparation of gallium nitride sensors.

[0061] The collecting assembly is disposed on a side of the base 101 away from the pushing assembly, so as to facilitate collecting the substrate 401 that is pushed out and dropped.

[0062] Secondly, the inclined plate 302 is fixedly connected to the base 101 and is located at the other end of the base 101, and the collection box 301 is placed below the inclined plate 302. The inclined plate 302 can guide and limit the substrate 401 pushed out of the upper push plate 120 to prevent it from sliding to the ground, so that it can smoothly enter the collection box 301.

[0063] When using a gallium nitride sensor preparation device of this embodiment, the inclined plate 302 can guide and limit the substrate 401 pushed out of the upper push plate 120 to prevent it from sliding to the ground, so that it can smoothly enter the collection box 301 for storage, so that the staff can uniformly collect and process it for subsequent gallium nitride sensor preparation.

[0064] See also Fig. 9 The present invention also provides a method for preparing a gallium nitride sensor, comprising the following steps:

[0065] S1: placing the substrate 401 of the gallium nitride sensor into the base 101, then starting the moving unit of the base 101 to move the moving frame 102 above the substrate 401;

[0066] S2: Due to the effect of the rebound unit, the lower pressing plate 103 is pressed against the upper pushing plate 120 and then approaches the substrate 401 , and the anti-slip protection plate 104 presses against the side of the substrate 401 ;

[0067] S3: starting the first driving unit to cut the substrate 401 from above by the first blade 105 to change the size;

[0068] S4: starting the second driving unit to cut the substrate 401 from the side with the second blade 106 to change the thickness of the substrate 401;

[0069] S5: Finally, the push-up unit is started, and the substrate 401 of the lower pressing plate 103 is pushed upward by the push-up plate 120, and then the bottom moving unit drives the moving frame 102 and the lower pressing plate 103 to move away from the substrate 401, and no longer resists;

[0070] S6: The sixth cylinder 201 is started, driving the horizontal push plate 203 to push the substrate 401 out;

[0071] S7: polishing the cut substrate 401 to form a base layer 402 on the polished surface;

[0072] S8: forming a buffer layer 403 on a side of the base layer 402 away from the substrate 401, and disposing a silicon layer 404 on the base layer 402, so as to form a second support for the substrate 401 by relying on the buffer layer 403, the base layer 402 and the silicon layer 404;

[0073] S9: Disposing an insulating layer 405 and a gallium nitride layer 407 on the silicon layer 404, and disposing a surface passivation layer 406 on the gallium nitride layer 407 to protect the gallium nitride layer 407;

[0074] S10 : symmetrically installing the anode 408 and the cathode 409 on the surface passivation layer 406 , and allowing the anode 408 and the cathode 409 to penetrate the surface passivation layer 406 and contact the gallium nitride layer 407 .

[0075] Among them, the substrate 401 of the gallium nitride sensor is placed inside the base 101, and then the moving unit of the base 101 is started to move the moving frame 102 above the substrate 401; the lower pressure plate 103 is supported on the upper push plate 120 due to the effect of the rebound unit, and then approaches the substrate 401, and the anti-slip protection plate 104 supports the side of the substrate 401; the first driving unit is started, and the substrate 401 is cut from the top by the first blade 105 to change the size; the second driving unit is started, and the substrate 401 is cut from the side by the second blade 106 to change the thickness of the substrate 401; finally, the upper push unit is started, and the substrate 401 of the lower pressure plate 103 is pushed up by the upper push plate 120, and then the bottom moving unit drives the moving frame 102 and the lower pressure plate 103 away from the substrate. The substrate 401 is no longer supported; the sixth cylinder 201 is started to drive the horizontal push plate 203 to push the substrate 401 out; the cut substrate 401 is polished to form a base layer 402 on the polished surface; a buffer layer 403 is formed on the side of the base layer 402 away from the substrate 401, and a silicon layer 404 is arranged on the base layer 402, and a second support for the substrate 401 is formed by relying on the buffer layer 403, the base layer 402 and the silicon layer 404; an insulating layer 405 and a gallium nitride layer 407 are arranged above the silicon layer 404, and a surface passivation layer 406 is arranged on the gallium nitride layer 407 to protect the gallium nitride layer 407; the anode 408 and the cathode 409 are symmetrically installed above the surface passivation layer 406, and the anode 408 and the cathode 409 penetrate the surface passivation layer 406 and contact the gallium nitride layer 407.

[0076] See also Fig.10 The present invention also includes a gallium nitride sensor, which is prepared by the above-mentioned gallium nitride sensor preparation method.

[0077] The invention comprises a substrate 401, a base layer 402, a buffer layer 403, a silicon layer 404, an insulating layer 405, a surface passivation layer 406, a gallium nitride layer 407, an anode 408 and a cathode 409. The base layer 402 is arranged on the substrate 401, the buffer layer 403 is arranged above the base layer 402, the silicon layer 404 is arranged above the buffer layer 403, the insulating layer 405 is arranged above the silicon layer 404, the gallium nitride layer 407 is arranged above the insulating layer 405, the surface passivation layer 406 is arranged above the gallium nitride layer 407, the anode 408 and the cathode 409 are arranged above the gallium nitride layer 407 in sequence and in contact with the gallium nitride layer 407.

[0078] What is disclosed above is only one or more preferred embodiments of the present application, and cannot be used to limit the scope of rights of the present application. Ordinary technicians in this field can understand that all or part of the processes of implementing the above embodiments and equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A gallium nitride sensor manufacturing device, comprising a base, characterized in that: Also included are preparation components; The preparation component includes a bottom moving unit, a moving frame, multiple rebound units, a lower pressure plate, an anti-slip protection plate, a first driving unit, a first blade, a second driving unit, a second blade and an upper pushing unit. The bottom moving unit is arranged below the base, and the two ends of the moving frame are respectively arranged on the bottom moving unit and the multiple rebound units, and one end of the multiple rebound units away from the moving frame is fixedly connected to the lower pressure plate. The upper pushing unit is arranged inside the base, and the lower pressure plate is placed on the upper pushing unit. The anti-slip protection plate is fixedly connected to the lower pressure plate and is located on one side of the lower pressure plate. The first driving unit is arranged on the lower pressure plate, the first blade is arranged on the first driving unit, the second driving unit is arranged on one side of the base, and the second blade is arranged on the second driving unit.

2. The gallium nitride sensor manufacturing device according to claim 1, characterized in that: The bottom moving unit includes an electric slide rail, a slider and two brackets. The electric slide rail is fixedly connected to the base through the two brackets and is located below the base. The slider is slidably connected to the electric slide rail. One end of the moving frame is fixedly connected to the slider and is located above the slider.

3. The gallium nitride sensor manufacturing device according to claim 2, characterized in that: The rebound unit includes a telescopic rod and a spring, the two ends of the telescopic rod are respectively fixedly connected to the other end of the movable frame and the top of the lower pressure plate, the two ends of the spring are respectively movably connected to the other end of the movable frame and the top of the lower pressure plate, and the spring is sleeved on the outside of the telescopic rod.

4. The gallium nitride sensor manufacturing device according to claim 3, characterized in that: The first driving unit includes a first cylinder, a support plate, a second cylinder, a pressing plate and a plurality of third cylinders, the first cylinder is fixedly connected to the pressing plate and is located on one side of the pressing plate, the output end of the first cylinder passes through the pressing plate and is fixedly connected to the support plate, the second cylinder is fixedly connected to the support plate and is located above the support plate, the output end of the second cylinder passes through the support plate and is fixedly connected to the pressing plate, the plurality of third cylinders are all fixedly connected to the support plate and are sequentially located above the support plate, the output end of the third cylinder passes through the support plate, and the first blade is bolted to the output ends of the plurality of third cylinders.

5. The gallium nitride sensor manufacturing device according to claim 4, characterized in that: The second driving unit includes multiple fourth cylinders and multiple fourth cylinder supports. The multiple fourth cylinder supports are fixedly connected to the base and are distributed in sequence on one side of the base. The multiple fourth cylinders are respectively installed above the corresponding fourth cylinder supports, and the output ends of the multiple fourth cylinders are bolted to the second blade.

6. The gallium nitride sensor manufacturing device according to claim 5, characterized in that: The push-up unit includes a fifth cylinder and a push-up plate. The fifth cylinder is fixedly connected to the base and is located below the base. The output end of the fifth cylinder passes through the base and is fixedly connected to the push-up plate.

7. The gallium nitride sensor manufacturing device according to claim 6, characterized in that: The gallium nitride sensor preparation device further includes an ejection component, and the ejection component is arranged on the base.

8. The gallium nitride sensor manufacturing device according to claim 7, characterized in that: The ejection assembly includes a sixth cylinder, a sixth cylinder support and a transverse thrust plate. The sixth cylinder support is fixedly connected to the base and is located at one end of the base. The sixth cylinder is installed above the sixth cylinder support. The transverse thrust plate is fixedly connected to the output end of the sixth cylinder.

9. A method for preparing a gallium nitride sensor, using the gallium nitride sensor preparation device according to claim 8, characterized in that: The steps include: Place the substrate of the gallium nitride sensor into the base, then start the base moving unit to move the moving frame above the substrate; Due to the effect of the rebound unit, the lower pressing plate is pressed against the upper push plate, and then approaches the substrate, and the anti-slip protection plate presses against the side of the substrate; The first driving unit is started to cut the substrate from above by the first blade to change the size; Starting the second driving unit to cut the substrate from the side with the second blade to change the thickness of the substrate; Finally, the push-up unit starts, and the lower pressing plate substrate is pushed up by the push-up plate, and then the bottom moving unit drives the moving frame and the lower pressing plate away from the substrate, and no longer resists; The sixth cylinder starts, driving the horizontal push plate to push the substrate out; Polishing the cut substrate to form a base layer on the polished surface; A buffer layer is formed on a side of the base layer away from the substrate, a silicon layer is disposed on the base layer, and a second supporting substrate is formed by the buffer layer, the base layer and the silicon layer; An insulating layer and a gallium nitride layer are arranged above the silicon layer, and a surface passivation layer is arranged on the gallium nitride layer to protect the gallium nitride layer; The anode and the cathode are symmetrically mounted on the surface passivation layer, and the anode and the cathode penetrate through the surface passivation layer and contact the gallium nitride layer.

10. A gallium nitride sensor, prepared by the gallium nitride sensor preparation method according to claim 9, characterized in that: The invention comprises a substrate, a base layer, a buffer layer, a silicon layer, an insulating layer, a surface passivation layer, a gallium nitride layer, an anode and a cathode, wherein the base layer is arranged on the substrate, the buffer layer is arranged above the base layer, the silicon layer is arranged above the buffer layer, the insulating layer is arranged above the silicon layer, the gallium nitride layer is arranged above the insulating layer, the surface passivation layer is arranged above the gallium nitride layer, the anode and the cathode are arranged above the gallium nitride layer in sequence and contact the gallium nitride layer.

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